JP5996687B2 - 検査装置及び検査方法 - Google Patents
検査装置及び検査方法 Download PDFInfo
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- B23K26/70—Auxiliary operations or equipment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/10—Aluminium or alloys thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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- Laser Beam Processing (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
図1に示されるように、本実施形態に係る検査装置1は、被検査デバイス(DUT:Device Under Test)である半導体デバイスDにおいて故障箇所を特定する等、半導体デバイスDを検査するための装置である。より詳細には、検査装置1は、故障個所を特定するとともに、当該故障個所の周囲に、当該故障個所を示すマーキングを行う。当該マーキングによって、故障解析の後工程において、検査装置1が特定した故障個所を容易に把握することができる。
次に、図7を参照して、第1実施形態の変形例に係る検査装置1Cについて説明する。なお、本実施形態の説明では上述した第1実施形態と異なる点について主に説明する。
次に、図5を参照して、第2実施形態に係る検査装置1Aについて説明する。なお、本実施形態の説明では上述した第1実施形態と異なる点について主に説明する。
次に、図6を参照して、第3実施形態に係る検査装置1Bについて説明する。なお、本実施形態の説明では上述した第1実施形態及び第2実施形態と異なる点について主に説明する。
次に、図8を参照して、第3実施形態の変形例に係る検査装置1Dについて説明する。なお、本実施形態の説明では上述した第3実施形態と異なる点について主に説明する。
Claims (13)
- 基板上にメタル層が形成された半導体デバイスにレーザマーキングを行う検査装置であって、
レーザ光を出力する第1の光源と、
前記第1の光源が出力したレーザ光を、前記メタル層側から前記半導体デバイスに照射するレーザマーキング用光学系と、
前記第1の光源を制御することによって、前記レーザマーキングを制御するマーキング制御部と、
前記半導体デバイスの前記基板側に配置され、前記半導体デバイスからの光を伝達する観察用光学系と、
前記観察用光学系を介して、前記半導体デバイスからの光を検出して検出信号を出力する光検出器と、
前記検出信号に基づいて前記半導体デバイスのパターン画像を生成する画像処理部と、を備え、
前記マーキング制御部は、前記レーザマーキングによって形成されるマーク像が前記パターン画像に現れるまで前記レーザマーキングが行われるように、前記レーザ光の照射を制御する、検査装置。 - 前記マーキング制御部は、前記レーザ光が前記メタル層を貫通するまで前記レーザマーキングが行われるように、前記レーザ光の照射を制御する、請求項1記載の検査装置。
- 前記画像処理部は、前記レーザ光による前記レーザマーキングが行われている間に前記パターン画像を生成する、請求項1又は2記載の検査装置。
- 照明光を出力する第2の光源を更に備え、
前記光検出器は、前記半導体デバイスにおいて反射された前記照明光を撮像する2次元カメラである、請求項1〜3のいずれか一項記載の検査装置。 - 前記光検出器は、前記半導体デバイスからの熱線を撮像する赤外カメラである、請求項1〜3のいずれか一項記載の検査装置。
- 光を出力する第2の光源を更に備え、
前記観察用光学系は、光走査部を有し、前記第2の光源から出力された光を前記基板側から前記半導体デバイスに走査するとともに、当該走査された光に応じて前記半導体デバイスから反射された光を前記光検出器に伝達する、請求項1〜3のいずれか一項記載の検査装置。 - 前記第1の光源は、波長が1000ナノメートル以上の前記レーザ光を出力し、
前記観察用光学系は、前記レーザ光の波長を含む光を遮る光学フィルタを有する、請求項1〜6のいずれか一項記載の検査装置。 - 前記第1の光源は、波長が1000ナノメートル未満の前記レーザ光を出力する、請求項1〜6のいずれか一項記載の検査装置。
- 基板上にメタル層が形成された半導体デバイスにレーザマーキングを行う検査方法であって、
前記メタル層側から前記半導体デバイスにレーザ光を照射してレーザマーキングを行うステップと、
前記半導体デバイスの前記基板側に配置された観察用光学系を用いて前記半導体デバイスからの光を光検出器に導くステップと、
前記半導体デバイスからの光に応じて前記光検出器から出力された検出信号に基づいて、前記半導体デバイスのパターン画像を生成するステップと、を含み、
前記レーザマーキングを行うステップでは、前記レーザマーキングによって形成されるマーク像が前記パターン画像に現れるまで、前記レーザ光の照射が実行される、検査方法。 - 前記レーザマーキングを行うステップは、前記レーザ光が前記メタル層を貫通するまで前記レーザマーキングを行うことを含む、請求項9記載の検査方法。
- 前記パターン画像を生成するステップは、前記レーザマーキングが行われている間に前記パターン画像を生成することを含む、請求項9又は10記載の検査方法。
- 前記レーザ光は、波長が1000ナノメートル以上であり、
前記観察用光学系は、前記レーザ光の波長を含む光を遮る光学フィルタを有する、請求項9〜11のいずれか一項記載の検査方法。 - 前記レーザ光は、波長が1000ナノメートル未満である、請求項9〜11のいずれか一項記載の検査方法。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
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JP2015024409A JP5996687B2 (ja) | 2015-02-10 | 2015-02-10 | 検査装置及び検査方法 |
CN202010418363.2A CN111564384B (zh) | 2015-02-10 | 2016-01-08 | 检查装置及检查方法 |
KR1020177017980A KR102547930B1 (ko) | 2015-02-10 | 2016-01-08 | 검사 장치 및 검사 방법 |
CN201680009493.2A CN107210244B (zh) | 2015-02-10 | 2016-01-08 | 检查装置及检查方法 |
KR1020237021046A KR102675974B1 (ko) | 2015-02-10 | 2016-01-08 | 검사 장치 및 검사 방법 |
US15/547,858 US10312166B2 (en) | 2015-02-10 | 2016-01-08 | Inspection system and inspection method |
PCT/JP2016/050517 WO2016129305A1 (ja) | 2015-02-10 | 2016-01-08 | 検査装置及び検査方法 |
TW108135561A TWI721583B (zh) | 2015-02-10 | 2016-01-18 | 檢查裝置及檢查方法 |
TW105101419A TWI676810B (zh) | 2015-02-10 | 2016-01-18 | 檢查裝置及檢查方法 |
US16/360,424 US10607900B2 (en) | 2015-02-10 | 2019-03-21 | Inspection system and inspection method |
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JP6927690B2 (ja) * | 2016-11-04 | 2021-09-01 | 浜松ホトニクス株式会社 | 半導体デバイス検査装置及び半導体デバイス検査方法 |
JP6865044B2 (ja) | 2017-01-19 | 2021-04-28 | 浜松ホトニクス株式会社 | 検査方法、検査装置、及びマーキング形成方法 |
JP6882045B2 (ja) * | 2017-04-13 | 2021-06-02 | 株式会社ディスコ | 集光点位置検出方法 |
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JP6871070B2 (ja) * | 2017-06-06 | 2021-05-12 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法 |
KR102409423B1 (ko) * | 2017-09-22 | 2022-06-16 | 주식회사 엘지에너지솔루션 | 레이저 송출 특성 값 결정방법 |
KR20190051395A (ko) * | 2017-11-06 | 2019-05-15 | 삼성전자주식회사 | 피검사 장치의 검사 시스템 및 방법 |
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WO2019226908A1 (en) | 2018-05-25 | 2019-11-28 | Fluke Corporation | Optical gas imaging systems and method compatible with uncooled thermal imaging cameras |
JP7158224B2 (ja) | 2018-09-26 | 2022-10-21 | 浜松ホトニクス株式会社 | 半導体デバイス検査方法及び半導体デバイス検査装置 |
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