JP5898341B2 - ４Ｈ−ＳｉＣ結晶で製造された非線形光学デバイス - Google Patents
４Ｈ−ＳｉＣ結晶で製造された非線形光学デバイス Download PDFInfo
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- JP5898341B2 JP5898341B2 JP2014550604A JP2014550604A JP5898341B2 JP 5898341 B2 JP5898341 B2 JP 5898341B2 JP 2014550604 A JP2014550604 A JP 2014550604A JP 2014550604 A JP2014550604 A JP 2014550604A JP 5898341 B2 JP5898341 B2 JP 5898341B2
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- laser
- crystal
- sic crystal
- light source
- pump light
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- 239000013078 crystal Substances 0.000 title claims description 164
- 230000003287 optical effect Effects 0.000 title claims description 101
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 238000002834 transmittance Methods 0.000 claims description 11
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 230000010287 polarization Effects 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 143
- 239000012071 phase Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 20
- 230000005540 biological transmission Effects 0.000 description 15
- 239000006185 dispersion Substances 0.000 description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 5
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- 239000007791 liquid phase Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/361—Organic materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
- G02F1/392—Parametric amplification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0064—Anti-reflection devices, e.g. optical isolaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2383—Parallel arrangements
- H01S3/2391—Parallel arrangements emitting at different wavelengths
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2012/070097 WO2013102307A1 (zh) | 2012-01-06 | 2012-01-06 | 用4h碳化硅晶体制造的非线性光学器件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015506495A JP2015506495A (ja) | 2015-03-02 |
| JP5898341B2 true JP5898341B2 (ja) | 2016-04-06 |
Family
ID=48744975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014550604A Active JP5898341B2 (ja) | 2012-01-06 | 2012-01-06 | ４Ｈ−ＳｉＣ結晶で製造された非線形光学デバイス |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9500931B2 (zh) |
| EP (1) | EP2801860A4 (zh) |
| JP (1) | JP5898341B2 (zh) |
| WO (1) | WO2013102307A1 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9500931B2 (en) | 2012-01-06 | 2016-11-22 | Institute Of Physics, Chinese Academy Of Sciences | Nonlinear optical device manufactured with 4H silicon carbide crystal |
| CN103774223B (zh) * | 2014-02-26 | 2016-03-16 | 武汉大学 | 一种中红外非线性光学晶体材料Rb2CdBr2I2及其制备方法 |
| CN110068979B (zh) * | 2019-04-30 | 2020-04-24 | 山东大学 | 一种可见到紫外波段光学频率转换器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3676695A (en) | 1971-07-23 | 1972-07-11 | Bell Telephone Labor Inc | Nonlinear optical devices utilizing substantially hexagonal silicon carbide devices |
| US5787104A (en) * | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
| JP2006093560A (ja) * | 2004-09-27 | 2006-04-06 | Toshiba Corp | 固体レーザ装置 |
| US20090072243A1 (en) * | 2005-04-18 | 2009-03-19 | Kyoto University | Compound semiconductor device and method for fabricating compound semiconductor |
| US7620077B2 (en) * | 2005-07-08 | 2009-11-17 | Lockheed Martin Corporation | Apparatus and method for pumping and operating optical parametric oscillators using DFB fiber lasers |
| CN201226412Y (zh) * | 2008-04-25 | 2009-04-22 | 北京工业大学 | 全固态中红外光参量差频激光器 |
| CN101614928B (zh) * | 2009-07-21 | 2010-12-01 | 中国船舶重工集团公司第七一七研究所 | 中红外光参量振荡器 |
| JP2011149698A (ja) * | 2009-12-25 | 2011-08-04 | National Institute Of Information & Communication Technology | テラヘルツ波帯用の窓部材、試料容器、検出発生装置、基板材料、並びに、単結晶シリコンカーバイドの透過特性の算出方法及び評価方法 |
| JP5853648B2 (ja) * | 2011-11-30 | 2016-02-09 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| US9500931B2 (en) | 2012-01-06 | 2016-11-22 | Institute Of Physics, Chinese Academy Of Sciences | Nonlinear optical device manufactured with 4H silicon carbide crystal |
-
2012
- 2012-01-06 US US14/370,510 patent/US9500931B2/en active Active
- 2012-01-06 EP EP12864638.7A patent/EP2801860A4/en not_active Withdrawn
- 2012-01-06 WO PCT/CN2012/070097 patent/WO2013102307A1/zh active Application Filing
- 2012-01-06 JP JP2014550604A patent/JP5898341B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015506495A (ja) | 2015-03-02 |
| WO2013102307A1 (zh) | 2013-07-11 |
| EP2801860A1 (en) | 2014-11-12 |
| US9500931B2 (en) | 2016-11-22 |
| US20150085349A1 (en) | 2015-03-26 |
| EP2801860A4 (en) | 2015-08-19 |
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