JP5884694B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP5884694B2
JP5884694B2 JP2012206490A JP2012206490A JP5884694B2 JP 5884694 B2 JP5884694 B2 JP 5884694B2 JP 2012206490 A JP2012206490 A JP 2012206490A JP 2012206490 A JP2012206490 A JP 2012206490A JP 5884694 B2 JP5884694 B2 JP 5884694B2
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control
power supply
semiconductor
switching element
semiconductor device
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JP2014064344A (en
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宏尚 山口
宏尚 山口
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株式会社デンソー
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02PIGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P19/00Incandescent ignition, e.g. during starting of internal combustion engines; Combination of incandescent and spark ignition
    • F02P19/02Incandescent ignition, e.g. during starting of internal combustion engines; Combination of incandescent and spark ignition electric, e.g. layout of circuits of apparatus having glowing plugs
    • F02P19/021Incandescent ignition, e.g. during starting of internal combustion engines; Combination of incandescent and spark ignition electric, e.g. layout of circuits of apparatus having glowing plugs characterised by power delivery controls
    • F02P19/023Individual control of the glow plugs
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02PIGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
    • F02P19/00Incandescent ignition, e.g. during starting of internal combustion engines; Combination of incandescent and spark ignition
    • F02P19/02Incandescent ignition, e.g. during starting of internal combustion engines; Combination of incandescent and spark ignition electric, e.g. layout of circuits of apparatus having glowing plugs
    • F02P19/021Incandescent ignition, e.g. during starting of internal combustion engines; Combination of incandescent and spark ignition electric, e.g. layout of circuits of apparatus having glowing plugs characterised by power delivery controls
    • F02P19/022Incandescent ignition, e.g. during starting of internal combustion engines; Combination of incandescent and spark ignition electric, e.g. layout of circuits of apparatus having glowing plugs characterised by power delivery controls using intermittent current supply

Description

  The present invention relates to a semiconductor device that controls energization to a load using a semiconductor switching element, and relates to a drive power source that supplies power to the load and a control that supplies power to a control semiconductor integrated circuit that controls driving of the semiconductor switching element. In the case where the power supply is shared, the control semiconductor integrated circuit that drives the semiconductor switching element against the reverse connection of the DC power supply is protected. In particular, a glow plug used in a diesel combustion engine is used as a load. It is suitable as a glow plug energization control device.

  A semiconductor switching element such as a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or IGBT (Insulated Gate Bipolar Transistor) is provided between a power source and a load having a relatively low inrush current, such as a glow plug and a motor, A semiconductor device that controls opening / closing of these semiconductor switching elements by a control IC including a control semiconductor integrated circuit is used for various applications.

  On the other hand, in a diesel combustion engine, afterglow, such as after-glow that energizes the glow plug, is performed after engine startup in order to improve engine combustion stability and combustion exhaust purification performance, in addition to improving ignitability at engine startup. In order to reduce the load on the power source and to precisely control the heating temperature according to the operating condition of the engine, instead of the conventional energization control by opening and closing the glow relay, a glow plug using a semiconductor switching element The energization control is performed.

  In Patent Document 1, in a device for controlling energization of a glow plug by connecting a power MOSFET for energization control between a glow plug and a storage battery in series, when the connection to the storage battery is performed with a reverse polarity, A glow plug control device comprising a protection circuit that applies to the gate a voltage that turns on the power MOSFET by a reverse polarity voltage, and prevents the breakage by turning on the power MOSFET for reverse power connection It is disclosed.

  In Patent Document 2, in a glow plug energization device controlled by a switching circuit using a semiconductor switching element, a glow plug is formed in a cylindrical metal housing fixed to a cylinder head, and one end is a switching circuit. And the other end is connected to the heat generating portion, and an insulating portion that electrically insulates between the housing and the energizing middle shaft is interposed between the switching circuit and the switching circuit. When a power source is reversely connected between the glow plug, a diode that cuts off the reverse current is provided, and a heat sink that dissipates heat generated from the diode is disposed in close contact with the diode, A technique for avoiding damage to the glow plug against reverse connection is disclosed.

In a conventional glow plug energization control unit (GCU) 1z shown as a comparative example in FIG. 5, a semiconductor switching element (MOS) 10z that opens and closes energization to a glow plug 4 provided as a load from a power source 2z, and an electronic control unit (ECU) And a semiconductor control integrated circuit (control IC) 11z that opens and closes the MOS 10z according to the drive control signal SI from 3z, and the gate voltage V G is supplied from the control IC 11z between the gate G and the source S according to the drive control signal SI from the ECU 3z. When applied, the drain D and the source S become conductive, and the glow plug 4 is energized.
Control IC11z is performed according to the driving control signal SI from the ECU 3, by changing the duty ratio of the application period of the gate voltage V G pulse width modulation to adjust the heating value of the glow plug 4 (PWM) control.

The glow plug 4 is provided in each cylinder of an internal combustion engine (not shown), and the GCU 1z is provided with MOSs 10z (1 to n) for controlling energization to the respective glow plugs 4 (1 to n). Each MOS 10z (1 to n) is controlled to be opened and closed by the IC 11z.
A parasitic diode 111z is inevitably formed between the control power supply terminal + B and the ground terminal GND of the control IC 11z, and the parasitic diode 111z has a forward direction from the ground side toward the control power supply side.
For this reason, when a reversely connected voltage is applied between the ground power supply terminal + B and the GND terminal, a large current flows from the substrate at the GND potential toward the control power supply terminal + B. Burnout of a bonding wire or the like for connection to the substrate may be caused, leading to failure of the control IC 11z.

In the conventional GCU1z, a load drive power supply terminal BATT that supplies power to the glow plug 4 and a control power supply terminal + B that supplies power to the control IC 11z are respectively a load power supply path WLD provided with a fuse F, and a control power supply. Connected to the DC power supply 2 via a path WCNT, and further, a relay RY that is driven to open and close by the ECU 3z is interposed in the control power supply path WCNT.
In the conventional GCU1z, even when the DC power supply 2 is reversely connected, the ECU 3z is also reversely connected, so that the relay RY does not operate and no reverse current flows through the control IC 11z.

On the other hand, in recent years, in a semiconductor device such as a glow plug energization control device, a drive power supply path W LD that supplies power to a load and a control power supply path W CNT that supplies power to a control IC that controls a semiconductor switching element are commonly used. Therefore, a semiconductor device with a simple configuration is being studied in order to reduce wiring costs.
Patent Document 3 discloses a glow plug unit having an input end for connecting a glow plug unit to a control line, wherein the glow plug of the glow plug unit is driven and controlled via the control line. A glow plug unit is disclosed, wherein the glow plug unit has an output end, and at least one other glow plug unit is connected to the control line via the output end. .

However, in the conventional GCU1z shown in FIG. 5, when the common and to the control power supply path W CNT and the load drive power path W LD for wiring reduce the driving power supply path W LD protect control IC11z from the power reverse connection mechanism Therefore, when the DC power supply 2 is connected in the reverse direction, a reverse current flows through the parasitic diode 111z of the control IC 11z, which may cause a failure of the control IC 11z.
As a reverse connection protection means for protecting the control IC from such a reverse connection of the power supply, a MOSFET for bypassing the reverse current as disclosed in Patent Document 1 between the DC power supply 2 and the load drive power supply terminal BATT, or Patent Document 2 diodes and blocking the reverse current as in, it is contemplated that the relay RY as interposed control power supply path W CNT shown in FIG. 5 can be protected by interposing the load power path W LD.

However, the driving power supply path W LD, sometimes flowing a large current in excess of several tens of A as inrush current, diodes provided as a protection against reverse connection means, MOSFET, a relay or the like, a large capacity is required, and, The mounting space will also increase.
For this reason, although it intends to reduce the wiring cost, the manufacturing cost of the semiconductor device is increased instead.
In addition, the control power supply BATT may be branched from the drive power supply BATT, and the control IC may be protected by interposing a diode or MOSFET for reverse connection protection on a bus bar, a lead frame, a circuit board, or the like that connects the control power supply + B. Although it is considered possible, it inevitably increases the mounting space.

  Therefore, in view of such a situation, the present invention reliably prevents destruction of a low-rated heating element such as a glow plug with respect to reverse connection of a power source with a simple configuration without increasing the physique at a relatively low cost. An object is to provide an energization control device.

According to the first aspect of the present invention (1, 1a, 1b, 1c, 1d), a semiconductor switching element is provided between the DC power supply (2) and the load (4) and controls the opening and closing of the energization to the load (4). (10, 10a, 10b, 10c, 10d) and a semiconductor integrated circuit (11, 11a) for controlling the drive of the semiconductor switching element (10, 10a, 10b, 10c, 10d). Te, from the DC power source (2), the semiconductor switching element (10, 10b, 10c, 10d) via a supply and control written above semiconductor integrated circuit of the load drive power supply (BATT) to the load (4) line supply and control power to (11,11a) (+ B) Utotomoni, power reverse connection protection device (102,102b), the semiconductor switching element (10, 10b, 10c, 10d) power input terminal (D of ) And for the above control Between the control power supply terminal connected to the power supply input terminal of the conductor integrated circuit (11,11a) (+ B) ( D 2), the semiconductor switching element (10, 1 0b, 10c, 10d) inside the integrally provided cage, the power reverse connection protection device (102,102b), said semiconductor switching element (10, 10b, 10c, 10d) in a direction toward the said control power supply terminal (D2) from the power input terminal (D) as forward A reverse connection protection diode (102) that allows a forward current and blocks a reverse current, and / or a limiting resistor (102b) having a negative temperature characteristic .

According to a second aspect of the present invention (1, 1a, 1b, 1c, 1d), the load (4) is a glow plug (4) that is provided for each cylinder of the internal combustion engine and generates heat when energized.

According to a third aspect of the present invention (1, 1b, 1c, 1d), the control semiconductor integrated circuit (11) is provided independently for each of the plurality (# 1 to #n) of the glow plugs (4). It was.

In the invention (1a, 1b, 1c, 1d) of claim 4 , the control semiconductor integrated circuit (11a) controls a plurality of (# 1 to #n) energizations to the plurality of glow plugs (4) ( The semiconductor switching elements (10 , 10a, 10b, 10c, 10d ) of # 1 to #n) are driven to open and close.

According to the present invention, even if the power source is reversely connected in the semiconductor device having a simple structure in which the driving cost and the control power source are connected through the same path to reduce the wiring cost. The reverse connection protection element provided in the semiconductor switching element prevents a reverse current from flowing through the control semiconductor integrated circuit, so that the control semiconductor integrated circuit can be prevented from being damaged.
In addition, in the present invention, since the reverse connection protection element is formed at the same time when the semiconductor switching element is formed, the control semiconductor is surely against the reverse connection of the power source without increasing the manufacturing cost due to the adoption of a relay or the like. The integrated circuit can be protected.
Also, when a diode is used as the reverse connection protection element, the forward voltage of the diode has a negative temperature characteristic, so by placing it on a heat-generating semiconductor switching element, rather than placing it alone in the wiring path, Since the forward voltage is always high and the temperature is high, the forward voltage is reduced, and the voltage necessary for the operation of the control semiconductor integrated circuit can be ensured to a lower voltage even when the power supply voltage fluctuates. it can.

BRIEF DESCRIPTION OF THE DRAWINGS The block diagram which shows the outline | summary of the semiconductor device in the 1st Embodiment of this invention. The block diagram which shows the outline | summary of the semiconductor device in the 2nd Embodiment of this invention. The block diagram which shows the principal part of the semiconductor device in the 3rd Embodiment of this invention. The block diagram which shows the principal part of the semiconductor device in the 4th Embodiment of this invention. The block diagram which shows the principal part of the semiconductor device in the 5th Embodiment of this invention. 1 is a configuration diagram showing an example of a drive control integrated circuit used in a semiconductor device of the present invention. The block diagram which shows the outline | summary of the conventional semiconductor device shown as a comparative example.

Referring to FIG. 1, as a semiconductor device in the first embodiment of the present invention, a glow plug 4 provided for each cylinder of an unillustrated diesel internal combustion engine is used as a load, and an electronic control unit (ECU) according to an operating situation. The glow plug energization control unit (GCU) 1 controls the energization of the glow plug 4 by driving the semiconductor switching element (MOS) 10 to open and close by the drive control integrated circuit (IC) 11 in accordance with the drive signal SI transmitted from 3. An outline will be described.
In the present embodiment, each GCU 1 (# 1 to #n) is provided for each glow plug 4 (# 1 to #n), and each GCU 1 is independently connected to each glow plug 4. It is the structure which controls electricity supply.

GCU1 is provided on the upstream side of the glow plug 4 is connected via a single power supply wiring W B to the power source 2, a load driving power source BATT and control power supply + B is supplied via a common wiring route, It is connected to the ECU 3 via the drive signal line W SI and the self-diagnosis signal line W DI .
Further, the GCU 1 includes a MOS 10 that controls energization from the power source 2 to the glow plug 4 and a control IC 11 that controls opening and closing of the MOS 10. The GCU 1 is inside the MOS 10 and includes a power input terminal (drain) D and a control IC 11. between the control power supply terminal D 2 to be connected to the control power input terminal (+ B), as the power supply reverse connection protection device, the current when the power source 2 is connected in a forward direction allows the power supply 2 is connected in the reverse direction In this case, the reverse connection protection diode 102 for preventing the current in this case is integrally provided in the MOS 10.

In the GCU 1 of the present invention, when the power source 2 is reversely connected, the parasitic control is performed between the power source terminal (+ B) in the control semiconductor integrated circuit (control IC) 11 provided for driving control and the ground terminal GND. Although the side parasitic diode 111 is in the forward direction, the reverse connection protection diode 102 is in the reverse direction, so that the reverse current can be prevented from flowing and the control IC 11 can be prevented from being destroyed.
In the present embodiment, an example in which an n-channel power metal oxide semiconductor field effect transistor (MOSFET) is used as the semiconductor switching element 10 is shown, but the semiconductor switching element 10 to which the present invention is applied is an n− It is not limited to the channel power MOSFET, but may be a p-channel, sense MOS, IGBT, thyristor, GTO, or the like.
Further, the glow plug 4 used as a load in the present embodiment may be either a metal glow plug having a metal heating element or a ceramic glow plug having a ceramic heating element.

The drain D of the MOS 10 is connected to the input terminal BATT, and is connected to the DC power supply 2 via the power supply path WB.
The source S is connected to the glow plug 4 via the glow plug output terminal GL.
The gate G is connected to the output V OUT of the control IC 11.
Inside the MOS 10, a parasitic diode 101 is inevitably formed between the drain and source of the transistor 100, and the direction of the parasitic diode 101 from the source S to the drain D is the forward direction.

In the MOS 10 which is the main part of the present invention, a reverse connection protection diode 102 is formed branched from the drain D and connected to the power supply input terminal (+ B) of the control IC.
Since the forward voltage of the reverse connection protection diode 102 has a negative temperature characteristic, it is maintained at a certain temperature or more by being provided in the heat-generating MOS 10, so that the forward voltage is reduced and input to the drain D. In addition, the control voltage V D2 having a small voltage drop with respect to the input voltage V DD can be supplied as the power supply voltage of the control IC.
Further, since the current flowing through the control IC 11 is small, it is not necessary to increase the capacity of the reverse connection protection diode 102.

The ECU 3 transmits a drive signal SI for controlling energization to the glow plug 4 in accordance with the operation state of the internal combustion engine (not shown).
Drive signal SI is a control IC 11, is converted into the drive voltage V G for opening and closing the semiconductor switching element 10, is input to the gate G of the semiconductor switching element 10.
In addition, a self-diagnosis signal DI is transmitted from the control IC 11 to the ECU 3 and used for feedback control of power supplied to the load and determination of the presence or absence of abnormality.

  When the power supply 2 is reversely connected, the reverse current to the control IC is interrupted by the reverse connection protection diode 102 built in the MOS 10.

With reference to FIG. 2, a GCU 1a according to the second embodiment of the present invention will be described.
In the above-described embodiment, the configuration in which energization to the glow plug 4 provided in each cylinder is controlled by the independent GCU 1 has been described. However, in the GCU 1a in the present embodiment, a plurality of GCUs 1a provided with each cylinder are provided. The difference is that the power supply to the glow plugs 4 (# 1 to #n) is controlled.
For this reason, the GCU 1a in this embodiment is provided with the MOS 10 including the power supply reverse connection protection diode 102 of the control IC and the MOS 10a not including the reverse connection protection diode 102.

In the control IC 11a, the control voltage V D2 is introduced from the first MOS 10 to the control voltage terminal + B via the reverse connection protection diode 102, and each glow plug 4 (1 to n) is driven according to the drive signal SI transmitted from the ECU 3. A driving voltage (V1 to Vn) is applied to each gate G (1 to n) of the MOS 10 (1) and the MOS 10a (2 to n) for controlling energization to the gate at a predetermined timing.
Also in the present embodiment, the reverse current is blocked by the reverse connection protection diode built in the MOS 10, and the damage of the control IC 11a due to the reverse power connection can be avoided.

Referring to FIG. 3 A, a description will be given of a semiconductor switching element 10b is a main part of a semiconductor device 1b of the third embodiment of the present invention.
In the above-described embodiment, an example in which the diode 102 that prevents reverse current from flowing when the power source 2 is reversely connected is provided on the MOS 10 as the reverse connection protection element. In the same configuration of the embodiment, a current limiting resistor 102b is provided as a reverse connection protection element instead of the diode 102 or together with the diode 102.
In the present embodiment, when the power supply 2 is reversely connected, the current flowing through the control IC 11 is limited by the current limiting resistor 102b, so that the control IC 11 can be prevented from being damaged.
Further, when the power source 2 is normally connected, heat is generated during the opening / closing operation of the semiconductor switching element 10b, so that the resistance value of the current limiting resistor 102b having negative temperature characteristics is lowered and the control IC 11 is operated. A stable voltage required for the operation can be ensured.
Furthermore, as shown in FIG. 3B, as a reverse connection protection element of the semiconductor device 1c in the fourth embodiment , a reverse connection protection diode 102 and a current limiting resistor 102b are connected in parallel and connected between the drain D and the control voltage terminal D2. and interposed constitute MOS10c, or, as shown in FIG. 3C, the inverse tangent protection of the semiconductor device 1d of the fifth embodiment, a reverse connection protection diode 102 and current limiting resistor 102b, connected in series Thus, the MOS 10d may be configured to be interposed between the drain D and the control voltage terminal D2.

A specific configuration example of the control IC 11 that can be applied to the semiconductor devices 1, 1a, 1b, and 1c of the present invention will be described with reference to FIG.
The control IC 11 includes a driver (DRV) 110, a detection unit (DTC) 112, and a self-diagnosis unit (DIU) 113.
DRV110 generates a drive voltage V G according to the drive signal SI transmitted from the ECU 3, for opening and closing the MOS10.
The DTC 112 detects a current flowing through the semiconductor switching element 10 and detects an abnormality such as a change in the resistance value R GP of the glow plug 4 and a disconnection.
Self-diagnosis is performed from the glow plug resistance R GP , plug current I GP , plug voltage V GP, etc. detected by the DTC 112, and a self-diagnosis signal DI is output to the ECU 3.
Further, in the control IC 11 formed by the control semiconductor integrated circuit, a parasitic diode is inevitable between the control power supply terminal + B and the ground terminal GND in which the forward direction from the ground GND side to the input + B side is the forward direction. Is formed.
The control IC 11 shown in the present embodiment can be adopted for any of the GCUs 1, 1a, and 1b in the above-described embodiment.
Further, in the present invention, the specific configuration of the control IC 11 is not limited to the present embodiment, and is used to control the semiconductor switching element 10 including the parasitic diode 101 that is in the forward direction when the power supply 2 is reversely connected. As long as the semiconductor integrated circuit for control is used as a driver DRV110, the present invention can be used as a driver DRV110. It can be suitably employed for protection against reverse connection of a semiconductor device using a pump DC-DC converter or other known drive control circuit.

  As shown in the above embodiment, the semiconductor device of the present invention is suitable as an energization control device for a glow plug used in a diesel combustion engine, but is a gas sensor for detecting the concentration of a specific gas component in combustion exhaust gas. A heating element that heats and activates the sensor element may be used as a load, and the heating element may be used for energization control of the heating element, or may be used for load control of a stepping motor, an inverter motor, or the like.

1, 1a, 1b, 1c, 1d Semiconductor device (GCU)
10, 10b, 10c, 10d Semiconductor switching element (MOS)
DESCRIPTION OF SYMBOLS 100 Transistor 101 Element side parasitic diodes 102 and 102b Reverse connection protection means 11 and 11a Control semiconductor integrated circuit (control IC)
110 Driver (DRV)
111 Control-side parasitic diode 112 Current detection means 113 Self-diagnosis device 2 DC power supply 3 Electronic control unit (ECU)
4 Load (glow plug)
BATT Load drive power supply + B Control power supply SI Drive signal DI Self-diagnosis signal D Drain D 2 Control power supply terminal G Gate S Source V DD drain voltage V D2 Control voltage V GG Gate voltage V SS Source voltage

JP-A-6-129337 JP 2007-303288 A Special table 2009-515089

Claims (4)

  1. A semiconductor switching element (10, 10a, 10b, 10c, 10d) provided between a DC power source (2) and a load (4) and controlling opening and closing of the load (4), and the semiconductor switching element ( 10, 10 a, 10 b, 10 c, 10 d), a semiconductor device including a control semiconductor integrated circuit (11, 11 a) for controlling driving
    From the DC power source (2), the semiconductor switching element (10, 10b, 10c, 10d) via a supply and control written above semiconductor integrated circuit of the load drive power supply (BATT) to the load (4) (11 control power to 11a) (+ B) supplied with the row Utotomoni of
    The power supply reverse connection protection element (102, 102b) is connected to the power input terminal (D) of the semiconductor switching element ( 10, 10b , 10c, 10d ) and the power input terminal (+ B of the control semiconductor integrated circuit (11, 11a)). between the control power supply terminal (D 2) connected to), the semiconductor switching element (10, 1 0b, 10c, and integrally formed with the interior of 10d), the power reverse connection protection device (102,102B) is The forward direction current is allowed and the reverse direction current is cut off in the direction from the power input terminal (D) of the semiconductor switching element (10, 10b, 10c, 10d) to the control power supply terminal (D 2 ). A semiconductor device (1, 1a, 1b, 1c, 1d) comprising a reverse connection protection diode (102) and / or a limiting resistor (102b) having negative temperature characteristics .
  2. Upper Symbol load (4) The semiconductor device according to claim 1 is a glow plug (4) for generating heat by energization is provided for each cylinder of the internal combustion engine (1, 1a, 1b, 1c, 1d).
  3. The semiconductor device (1 , 1b, 3) according to claim 2 , wherein the control semiconductor integrated circuit (11) is provided independently for each of a plurality (# 1 to #n) of the glow plugs (4) . 1c, 1d).
  4. The control semiconductor integrated circuit (11 a ) controls a plurality (# 1 to #n) of the glow plugs (4) to control a plurality (# 1 to #n) of the semiconductor switching elements (10, 10a). 10. The semiconductor device (1 a , 1 b, 1 c, 1 d) according to claim 2 , wherein the semiconductor device (1 a , 1 b, 1 c, 1 d) is driven to open and close .
JP2012206490A 2012-09-20 2012-09-20 Semiconductor device Active JP5884694B2 (en)

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JP2012206490A JP5884694B2 (en) 2012-09-20 2012-09-20 Semiconductor device
DE201310218707 DE102013218707A1 (en) 2012-09-20 2013-09-18 Semiconductor device i.e. glow plug supply control unit, for controlling supply of metal glow plug during starting diesel engine, has protection diode integrally formed in MOSFET such that diode is attached between drain and supply terminal

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JP5884694B2 true JP5884694B2 (en) 2016-03-15

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JP6376188B2 (en) 2015-11-04 2018-08-22 株式会社デンソー Igniter

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JPH01104050U (en) * 1987-12-28 1989-07-13
JP3123261B2 (en) 1992-10-12 2001-01-09 株式会社デンソー The glow plug control device
JP4219646B2 (en) * 2002-09-17 2009-02-04 日本特殊陶業株式会社 Glow plug energization control device
DE102005052880A1 (en) * 2005-11-07 2007-05-10 Robert Bosch Gmbh Glow plug assembly and system for operating a plurality of glow plugs
JP2007303288A (en) 2006-05-09 2007-11-22 Denso Corp Glow plug energization device
JP5407457B2 (en) * 2009-03-18 2014-02-05 株式会社デンソー Energization control device
JP5667468B2 (en) * 2011-02-21 2015-02-12 日本特殊陶業株式会社 Glow plug energization control device

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