JP5852069B2 - リソグラフィ装置およびデバイス製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000007788 liquid Substances 0.000 claims description 275
- 238000007654 immersion Methods 0.000 claims description 129
- 239000000758 substrate Substances 0.000 claims description 126
- 239000012530 fluid Substances 0.000 claims description 86
- 230000005499 meniscus Effects 0.000 claims description 58
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 40
- 230000005855 radiation Effects 0.000 claims description 36
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 20
- 239000001569 carbon dioxide Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 13
- 238000000671 immersion lithography Methods 0.000 claims description 4
- 230000005514 two-phase flow Effects 0.000 claims description 4
- 230000036961 partial effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 187
- 230000003287 optical effect Effects 0.000 description 28
- 238000000059 patterning Methods 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000003570 air Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 238000004590 computer program Methods 0.000 description 9
- 239000006260 foam Substances 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 239000011148 porous material Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 108010003272 Hyaluronate lyase Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001595 contractor effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
放射ビームB(例えばUV放射またはDUV放射)を調整するよう構成されている照明システム(イルミネータ)ILと、
パターニングデバイス(例えばマスク)MAを支持するよう構成され、いくつかのパラメタに従ってパターニングデバイスMAを正確に位置決めするよう構成されている第1の位置決め装置PMに接続されている支持構造(例えばマスクテーブル)MTと、
基板(例えばレジストでコーティングされた基板)Wを保持するよう構成され、いくつかのパラメタに従って例えば基板Wの表面などのテーブルの表面を正確に位置決めするよう構成されている第2の位置決め装置PWに接続されている支持テーブル(例えばひとつまたは複数のセンサを支持するセンサテーブルまたは基板テーブル)WTと、
パターニングデバイスMAにより放射ビームBに付与されたパターンを基板Wの(例えば1つまたは複数のダイからなる)目標部分Cに投影するよう構成されている投影システム(例えば屈折投影レンズ)PSと、を備える。
これは、基板Wと基板テーブルWTとの隙間を液体で満たすことにより液浸液中での気泡形成を抑制するという点で結像中に有効である。
Claims (11)
- 投影システムの最終要素と基板および/または基板テーブルの対向表面との間の局所的な空間に液浸液を閉じ込める液体閉じ込め構造を備える流体ハンドリングシステムと、
前記空間に隣接する領域にガスを供給するガス供給デバイスであって、二酸化炭素ガスの供給のためのガスソースを備えるガス供給デバイスと、を備え、
前記液体閉じ込め構造は、
前記液体閉じ込め構造の底部から液体を二相流として抽出する流体抽出器と、
前記流体抽出器と前記対向表面との間のメニスカスにて前記液浸液に生成される気泡が二酸化炭素を実質的に含むように、前記ガス供給デバイスからの二酸化炭素の供給用に前記流体抽出器の半径方向外側にあるガス供給開口と、
前記投影システムと前記対向表面との間の前記空間へと延在するプレートと、を備え、前記プレートは、前記投影システムの露光領域の半径方向外側にあり液体を流通させる開口を有する、液浸リソグラフィ装置。 - 前記流体抽出器は、前記プレートの半径方向外側にある、請求項1に記載の液浸リソグラフィ装置。
- 前記液体閉じ込め構造は、前記流体抽出器の半径方向外側に凹部を備え、
前記ガス供給開口は、前記流体抽出器と前記凹部との間に設けられている、請求項1または2に記載の液浸リソグラフィ装置。 - 前記凹部は環境雰囲気に接続され、及び/または、前記凹部は低圧源に接続されている、請求項3に記載の液浸リソグラフィ装置。
- 前記ガス供給開口は、前記流体抽出器の半径方向外側に隣接する、請求項1から4のいずれかに記載の液浸リソグラフィ装置。
- 前記液体閉じ込め構造は、前記空間のまわりで前記空間を部分的に画定する境界表面を形成し、
前記液体閉じ込め構造は、前記空間を部分的に画定する前記境界表面において前記空間に液体を供給する複数の開口を備える、請求項1から5のいずれかに記載の液浸リソグラフィ装置。 - 前記液体閉じ込め構造は、前記投影システムの前記最終要素の少し上まで延在しており、前記液浸液の液位が前記最終要素の上まで上昇する、請求項1から6のいずれかに記載の液浸リソグラフィ装置。
- 前記液体閉じ込め構造は、前記液体閉じ込め構造と前記投影システムとの間に張るメニスカスに隣接して前記ガス供給デバイスからガスを提供するさらなる開口を備える、請求項1から7のいずれかに記載の液浸リソグラフィ装置。
- 前記ガス供給デバイスは、前記液浸リソグラフィ装置の露光領域をガスで満たすよう前記ガスを供給する、請求項1から8のいずれかに記載の液浸リソグラフィ装置。
- 請求項1から9のいずれかに記載の液浸リソグラフィ装置を使用するデバイス製造方法であって、
前記投影システムの前記最終要素と前記対向表面との間の前記局所的な空間に閉じ込められた前記液浸液を通してパターン付与された放射ビームを投影することと、
前記空間に隣接する前記領域に前記ガスを提供することと、を含むデバイス製造方法。 - 液浸リソグラフィ装置のための流体ハンドリングシステムであって、前記流体ハンドリングシステムは投影システムの最終要素と基板および/または基板テーブルの対向表面との間の局所的な空間に液浸液を閉じ込める液体閉じ込め構造と、前記空間に隣接する領域にガスを供給するガス供給デバイスであって、二酸化炭素ガスの供給のためのガスソースを備えるガス供給デバイスと、を備え、
前記液体閉じ込め構造は、
前記液体閉じ込め構造の底部から液体を二相流として抽出する流体抽出器と、
前記流体抽出器と前記対向表面との間のメニスカスにて前記液浸液に生成される気泡が二酸化炭素を実質的に含むように、前記ガス供給デバイスからの二酸化炭素の供給用に前記流体抽出器の半径方向外側にあるガス供給開口と、
前記投影システムと前記対向表面との間の前記空間へと延在するプレートと、を備え、前記プレートは、前記投影システムの露光領域の半径方向外側にあり液体を流通させる開口を有する、流体ハンドリングシステム。
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US28502109P | 2009-12-09 | 2009-12-09 | |
US61/285,021 | 2009-12-09 | ||
US31396410P | 2010-03-15 | 2010-03-15 | |
US61/313,964 | 2010-03-15 |
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JP2013187139A Active JP5852069B2 (ja) | 2009-12-09 | 2013-09-10 | リソグラフィ装置およびデバイス製造方法 |
JP2015236441A Expired - Fee Related JP6158280B2 (ja) | 2009-12-09 | 2015-12-03 | リソグラフィ装置 |
JP2017112795A Active JP6444454B2 (ja) | 2009-12-09 | 2017-06-07 | リソグラフィ装置 |
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US (3) | US9229334B2 (ja) |
JP (4) | JP5366918B2 (ja) |
KR (1) | KR101268557B1 (ja) |
CN (1) | CN102096330B (ja) |
NL (1) | NL2005655A (ja) |
TW (1) | TWI424282B (ja) |
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NL2007453A (en) | 2010-10-18 | 2012-04-19 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
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NL2008980A (en) | 2011-07-11 | 2013-01-14 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
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Publication number | Publication date |
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JP2013251580A (ja) | 2013-12-12 |
CN102096330A (zh) | 2011-06-15 |
US20110134401A1 (en) | 2011-06-09 |
JP5366918B2 (ja) | 2013-12-11 |
JP2016075935A (ja) | 2016-05-12 |
US9746782B2 (en) | 2017-08-29 |
JP6158280B2 (ja) | 2017-07-05 |
US10018921B2 (en) | 2018-07-10 |
KR20110065398A (ko) | 2011-06-15 |
US20160116850A1 (en) | 2016-04-28 |
TWI424282B (zh) | 2014-01-21 |
TW201142525A (en) | 2011-12-01 |
US9229334B2 (en) | 2016-01-05 |
US20170357161A1 (en) | 2017-12-14 |
NL2005655A (en) | 2011-06-14 |
CN102096330B (zh) | 2014-02-19 |
JP2011124573A (ja) | 2011-06-23 |
JP2017161943A (ja) | 2017-09-14 |
KR101268557B1 (ko) | 2013-05-28 |
JP6444454B2 (ja) | 2018-12-26 |
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