JP5751633B2 - Semiconductor integrated circuit device, semiconductor integrated circuit control method, and control parameter generation method - Google Patents

Description

  The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device including a plurality of partial circuits having the same function.

  Along with advances in manufacturing technology of semiconductor integrated circuits, high integration by miniaturization of circuit elements and large diameters of semiconductor wafers are progressing. This increases the yield of semiconductor integrated circuits per production lot. On the other hand, as the semiconductor element formation process becomes complicated, the number of reticles (photomasks) necessary for manufacturing a semiconductor is increasing. For this reason, the development cost of one kind of semiconductor integrated circuit is rising. Against this background, not only general-purpose semiconductor integrated circuits but also semiconductor integrated circuits for specific applications, a single type of semiconductor integrated circuit having multiple partial circuits (eg modules) with the same function has been developed and requested. Development methods that activate and use only necessary circuits among a plurality of partial circuits according to specifications have become common. Thereby, one kind of semiconductor integrated circuit can be mounted on a plurality of devices (products) having multiple uses or different required performances.

  Incidentally, Patent Document 1 describes a job input device used in a large-scale computer system including a plurality of arithmetic devices (computers). Patent Document 1 discloses the following three methods for selecting which of a plurality of computing devices to submit a job to.

(1) The job input device specifies at least one non-operating device that is not executing a job from among a plurality of arithmetic devices. Next, the job input device acquires the current temperature of the cooling fan intake port for each of the at least one non-operating device. Then, the job submitting apparatus submits jobs to the non-operating apparatuses in the order of the acquired current temperature of the cooling fan intake port in ascending order. In other words, the job input device preferentially selects a non-operating device having a low current ambient temperature (i.e. current temperature of the cooling fan inlet) as a job input destination.

(2) The job input device specifies at least one non-operating device that is not executing a job from among the plurality of arithmetic devices. Next, the job input device acquires the current temperature of the cooling fan intake port, the current temperature of the exhaust port, and the current air volume of the cooling fan for each of the at least one non-operating device. Subsequently, the job input device uses, for each of the at least one non-operating device, the acquired current temperature of the cooling fan intake port, current temperature of the exhaust port, and current air volume of the cooling fan, in particular the exhaust port and the intake air. The current power consumption (in other words, the current calorific value) is calculated using the temperature difference of the mouth. Then, the job submitting apparatus submits jobs to the non-operating apparatuses in the order of decreasing current power consumption. In other words, the job input device preferentially selects an unoperated device having a small current power consumption (in other words, a current heat generation amount) as a job input destination.

(3) The job input device specifies at least one non-operating device that is not executing a job from among the plurality of arithmetic devices. Next, the job input device acquires the power consumption calculated and stored in advance for each of the at least one non-operating device. As a specific example of the calculation method of power consumption, calculation using a coefficient depending on current consumption per heating element when a job is input to the arithmetic device, the number of clocks of the CPU, and the like is shown. . Then, the job submission device submits jobs to the non-operating devices in the order of the power consumption calculated and stored in advance. That is, the job input device preferentially selects an unoperated device with low design power consumption as a job input destination.

JP 2011-18131 A

  With the spread and advancement of IT (Information Technology), improvement of energy consumption efficiency in all information processing apparatuses including embedded systems has become an urgent issue. Therefore, reduction of power consumption is also demanded for the semiconductor integrated circuit which is the component.

  The inventor of the present invention has studied a reduction in power consumption of a semiconductor integrated circuit. In a semiconductor integrated circuit having a plurality of partial circuits (eg modules) having the same function, when selecting and using at least one partial circuit according to the required performance, power is supplied to all the partial circuits and the partial circuits are swung. It is conceivable to select and use a necessary number of subcircuits in the order of serial numbers or randomly. However, although each of the plurality of partial circuits has the same function, the power efficiency (or power consumption efficiency) differs due to, for example, manufacturing variations. Therefore, in the above-described method of selecting the partial circuits in the order of serial numbers or at random, the one having excellent power efficiency is not necessarily selected preferentially. Therefore, it is difficult to sufficiently reduce the power consumption of the semiconductor integrated circuit by the above-described method.

  Note that Patent Document 1 discloses that (1) the ambient temperature (ie, the current temperature of the cooling fan intake port) at the present time, that is, the time when a job is input, from among non-operating devices included in a plurality of arithmetic devices (computers), It is disclosed to preferentially select a job submission destination that is currently low, that is, the power consumption at the time of job submission, or (3) the design power consumption. However, Patent Document 1 merely selects a computing device in a situation where power is supplied to all of the plurality of computing devices. In other words, Patent Document 1 does not select a circuit to which power is to be supplied from a plurality of circuits, and does not stop power supply to other circuits. Further, the selection criteria of the arithmetic unit described in Patent Document 1, that is, (1) the ambient temperature (ie, the current temperature of the cooling fan intake port) at the present time, that is, the job input time, (2) the current, that is, the job input time point, Neither the amount of power consumption nor the power consumption in design (3) evaluates the difference in power efficiency between arithmetic devices.

  The present invention has been made on the basis of the above-mentioned knowledge of the present inventor, and can contribute to reduction of power consumption of a semiconductor integrated circuit having a plurality of partial circuits (eg modules) each having the same function. An object of the present invention is to provide a semiconductor integrated circuit device, a semiconductor integrated circuit control method, a control parameter generation method, and a program.

  The first aspect includes a semiconductor integrated circuit device. The semiconductor integrated circuit device includes a plurality of partial circuits, a temperature measurement unit, and power supply control. Each of the plurality of partial circuits has the same function. The temperature control unit can control supply and stop of power to each of the plurality of partial circuits, and the partial circuit has a relatively small temperature rise rate when power is supplied to the plurality of partial circuits in the past. Is preferentially selected as at least one circuit to which power is supplied from among the plurality of partial circuits.

  The second aspect includes a semiconductor integrated circuit device. The semiconductor integrated circuit device includes a plurality of partial circuits, a temperature measurement unit, and a nonvolatile memory. Each of the plurality of partial circuits has the same function. The temperature control unit measures the temperature of each of the plurality of partial circuits. The non-volatile memory reflects a temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits, and controls supply and stop of power to each of the plurality of partial circuits. The control parameters used for the are stored.

  The third aspect includes a semiconductor integrated circuit device. The semiconductor integrated circuit device includes a plurality of partial circuits, a temperature measurement unit, and a control parameter generation unit. Each of the plurality of partial circuits has the same function. The temperature control unit measures the temperature of each of the plurality of partial circuits. Further, the control parameter generation unit reflects a temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits, and controls supply and stop of power to each of the plurality of partial circuits. Control parameters used to generate.

  The fourth aspect includes a method for controlling a semiconductor integrated circuit including a plurality of partial circuits each having the same function. According to the method, a partial circuit that has a relatively small temperature rise rate when power is supplied to the plurality of partial circuits in the past is preferentially used as at least one circuit that is supplied with power among the plurality of partial circuits. Including selecting.

  A fifth aspect includes a method for generating control parameters relating to a semiconductor integrated circuit including a plurality of partial circuits each having the same function. The method reflects the temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits, and is used to control the supply and stop of power to each of the plurality of partial circuits. Generating a control parameter.

  The sixth aspect includes a program for causing a computer to perform the method according to the fourth aspect described above.

  The seventh aspect includes a program for causing a computer to perform the method according to the fifth aspect described above.

  According to each aspect described above, a semiconductor integrated circuit device capable of contributing to a reduction in power consumption of a semiconductor integrated circuit having a plurality of partial circuits (eg modules) each having the same function, a method of selecting a partial circuit, And can provide programs.

1 is a block diagram illustrating a configuration example of a semiconductor integrated circuit device according to a first embodiment. 4 is a flowchart showing a specific example of a procedure for selecting a partial circuit in the semiconductor integrated circuit device according to the first embodiment. FIG. 10 is a block diagram showing a first modification of the semiconductor integrated circuit device according to the first embodiment. FIG. 10 is a block diagram showing a second modification of the semiconductor integrated circuit device according to the first embodiment. FIG. 10 is a block diagram showing a third modification of the semiconductor integrated circuit device according to the first embodiment. FIG. 10 is a block diagram showing a fourth modification of the semiconductor integrated circuit device according to the first embodiment. FIG. 10 is a block diagram showing a sixth modification of the semiconductor integrated circuit device according to the first embodiment. FIG. 6 is a block diagram illustrating a configuration example of a semiconductor integrated circuit device according to a second embodiment. It is a circuit diagram which shows the structural example of a cutoff circuit. It is a circuit diagram which shows the structural example of a power supply control part. It is a table | surface which shows six patterns of the permutation (priority order) regarding selection of three partial circuits. It is a table | surface which shows the specific example of the selection control signal which shows the number of required partial circuits. 10 is a timing chart showing an operation at the time of initial setting of the semiconductor integrated circuit device according to the second embodiment. 6 is a timing chart showing an operation of the semiconductor integrated circuit device according to the second embodiment in a normal time (after completion of initial setting).

  Hereinafter, specific embodiments to which the present invention is applied will be described in detail with reference to the drawings. In each drawing, the same or corresponding elements are denoted by the same reference numerals, and redundant description is omitted as necessary for clarification of the description.

<Embodiment 1 of the Invention>
FIG. 1 shows a configuration example of a semiconductor integrated circuit device 1 according to the present embodiment. The semiconductor integrated circuit device 1 has a plurality of partial circuits 11 to 13 each having the same function. In the configuration example of FIG. 1, the number of partial circuits is three for convenience of explanation, but this is only an example. The number of partial circuits may be two, or four or more. In the example of FIG. 1, the partial circuits 11 to 13 are supplied with power necessary for operation from the power supply wiring 50. The power supply wiring 50 is connected to a power supply circuit (not shown) arranged inside or outside the semiconductor integrated circuit device 1.

  The functions of the partial circuits 11 to 13 are not particularly limited. The partial circuits 11 to 13 can selectively use only a part of these depending on the required performance or required specifications for the semiconductor integrated circuit device 1. Each of the partial circuits 11 to 13 is, for example, a processor module or a cache memory module.

  The power supply control unit 20 can control supply and stop of power to each of the partial circuits 11 to 13. In the example of FIG. 1, the power supply control unit 20 individually determines power supply and stop to each partial circuit by controlling the cutoff circuits 21 to 23. The cutoff circuits 21 to 23 are respectively arranged between the power supply wiring 50 and the partial circuits 11 to 13 and can cut off the power supply to the partial circuits 11 to 13.

  Furthermore, the power supply control unit 20 selects at least one of the partial circuits 11 to 13 that is supplied with power from a partial circuit that has a relatively low temperature rise rate when power is supplied to the partial circuits 11 to 13 in the past. Select preferentially as one circuit. In other words, the power supply control unit 20 preferentially selects a partial circuit having a relatively high temperature rise rate when power is supplied to the partial circuits 11 to 13 in the past as a partial circuit whose power supply is stopped. To do. The power supply control unit 20 supplies power to the selected partial circuits by supplying power cutoff control signals S11 to S13 to the cutoff circuits 21 to 23, respectively, and stops supplying power to the partial circuits that are not selected. To do.

  As already described, although the partial circuits 11 to 13 have the same function, the power efficiency may be different from each other due to manufacturing variations. Specifically, the resistance value of each partial circuit due to the contribution of circuit elements such as semiconductors, resistors, and wirings in the circuit varies depending on manufacturing variations of these circuit elements. A relatively small temperature rise rate of the partial circuit means that the power efficiency of the partial circuit is relatively large. Therefore, when power is supplied to only a part of the partial circuits 11 to 13 and used, the effective power consumption of the semiconductor integrated circuit device 1 is selected by preferentially selecting a partial circuit having a relatively low temperature rise rate. Can be effectively reduced.

  In the example of FIG. 1, the power supply control unit 20 uses the control parameter generated by the control parameter generation unit 40 in order to control the supply and stop of power to each of the partial circuits 11 to 13. The control parameter reflects the temperature rise rate of each partial circuit when power is supplied to the partial circuits 11 to 13 in the past (in other words, actually).

  The control parameter only needs to include a parameter that can identify the difference in temperature increase rate between the partial circuits 11 to 13, and there are various variations. For example, the control parameter may include a first parameter based on the temperature of each partial circuit measured after power supply to the partial circuits 11 to 13 is started substantially simultaneously. In a non-energized state, heat is diffused sufficiently uniformly, so that the entire semiconductor integrated circuit device 1 (or the entire substrate including the partial circuits 11 to 13) is substantially at a constant temperature from the state to the partial circuits 11 to 13. When power supply is started at the same time, the temperature of each partial circuit after the elapse of a predetermined time or the first parameter based on them indicates the temperature rise rate of each partial circuit. This is because the temperatures of the partial circuits 11 to 13 at the start of power supply can be regarded as substantially the same.

  Specifically, the first parameter may be the measured value of the temperature itself, another value indicating the magnitude of the measured temperature, or a numerical value indicating the order of magnitude of the measured temperature. Here, “substantially simultaneously” means that a slight difference in the power supply start time is allowed due to a difference in wiring length, a propagation delay of a control signal, an error in the cutoff circuits 21 to 23, and the like. Means that. Further, “substantially simultaneously” means that there is a difference in the start time of power supply that does not affect the accuracy required for temperature measurement.

  In addition, for example, the control parameter is a measured temperature of each partial circuit before the power supply to the partial circuits 11 to 13 is started substantially simultaneously, and a measured temperature of each partial circuit after the power supply is started. A second parameter based on the difference may be included. The second parameter may be the calculated value of the temperature difference itself, another value indicating the magnitude of the temperature difference, or a numerical value indicating the order of the temperature difference.

  The control parameter generation unit 40 generates the control parameters described above. The generation of the control parameter is performed using, for example, the power supply control unit 20 and the temperature measurement unit 30. To describe a specific example, the control parameter generation unit 40 may instruct the power supply control unit 20 to start power supply to all of the partial circuits 11 to 13. Then, a measured value related to the temperature of each partial circuit obtained by the temperature measuring unit 30 after a lapse of a predetermined time from the start of power supply may be acquired. At this time, the partial circuits 11 to 13 may perform the same operation (e.g. start-up sequence).

  For example, the control parameter generation unit 40 may generate the control parameter when the semiconductor integrated circuit device 1 is initialized. The control parameter generated at the time of initial setting may be stored in a non-volatile memory (not shown) so that it can be maintained even after the power supply to the semiconductor integrated circuit device 1 is stopped. Then, the power supply control unit 20 stores the partial circuit for supplying power in a non-volatile memory (not shown) when the semiconductor integrated circuit device 1 is started up (at the time of power supply) from the next time after the initial setting is completed. It may be selected according to the control parameters. In this way, it is not necessary to generate control parameters at the next and subsequent startups after the initial setting is completed, so that the startup time of the semiconductor integrated circuit device 1 can be shortened.

  The temperature measuring unit 30 measures the temperature of each of the partial circuits 11 to 13. For example, the temperature measuring unit 30 may measure the temperature of the semiconductor substrate (chip) on which the partial circuits 11 to 13 are formed, and output an analog or digital electric signal indicating the magnitude of the measured temperature. The temperature measurement unit 30 includes, for example, a plurality of temperature sensors (eg, thermistors, thermocouples, resistance temperature detectors, or semiconductor sensors) arranged in the vicinity of each of the partial circuits 11 to 13, that is, three in this example. But you can.

  FIG. 2 is a flowchart showing a specific example of a procedure for selecting a partial circuit in the semiconductor integrated circuit device 1. In step S <b> 101, the power supply control unit 20 starts supplying power to all the partial circuits 11 to 13. In step S102, the temperature measurement unit 30 measures the temperature of each of the partial circuits 11 to 13. In step S <b> 103, the control parameter generation unit 40 generates a control parameter that reflects the temperature increase rate of each of the partial circuits 11 to 13 using the measurement result obtained by the temperature measurement unit 30. As described above, the control parameter may be a temperature measurement value after the start of power supply, or may be a calculated value indicating a temperature difference before and after the start. In step S104, the power supply control unit 20 preferentially selects a partial circuit with a relatively small temperature increase rate based on the control parameter, supplies power to the selected partial circuit, and does not select the partial circuit. Stop power supply to. As described above, steps S101 to S103 are performed only at the time of initial setting, and may be omitted at the time of normal activation after completion of the initial setting.

  As described above, in the semiconductor integrated circuit device 1 according to the present embodiment, when power is supplied to only a part of the partial circuits 11 to 13, the partial circuit with a relatively low temperature rise rate is given priority. By selecting effectively, the effective power consumption of the semiconductor integrated circuit device 1 can be effectively reduced.

  In addition, a reduction in the amount of heat generated by the semiconductor integrated circuit device 1 can be expected by reducing the effective power consumption. As a result, the load required for cooling the semiconductor integrated circuit device 1 and the device / system in which the semiconductor integrated circuit device 1 is mounted, and the machine room or data center in which the device / system is installed can be reduced. it can.

  The semiconductor integrated circuit device 1 may be a semiconductor product based on SoC (System-on-a-chip) or a semiconductor product based on SiP (System In Package). The semiconductor integrated circuit device according to the present embodiment may be a system in which a plurality of semiconductor products (packaged IC (Integrated Circuit)) are mounted on a printed circuit board.

  Further, as already described, the semiconductor integrated circuit device 1 may have a non-volatile memory for storing control parameters generated based on the control of the control parameter generation unit 40. For example, the control parameters may be generated and stored in the nonvolatile memory when the semiconductor integrated circuit device 1 is initially set. Then, when starting the semiconductor integrated circuit device 1 after the initial setting, the control parameter generation process is omitted, and the power supply to the plurality of partial circuits 11 to 13 may be controlled in accordance with the control parameters stored in the nonvolatile memory.

  Further, either the control parameter generation unit 40 or the power supply control unit may be disposed outside the semiconductor integrated circuit device 1. Specifically, the control parameter generation unit 40 may be arranged in a tester (e.g. LSI (Large Scale Integration) tester) used in the inspection process of the semiconductor integrated circuit device 1. Further, the power supply control unit 20 may be disposed in an IC different from the IC including a plurality of partial circuits.

  Further, both the control parameter generation unit 40 and the power supply control unit 20 may be arranged outside the semiconductor integrated circuit device 1. In this case, the semiconductor integrated circuit device 1 may include a nonvolatile memory that stores control parameters generated based on the control of the control parameter generation unit 40. The power supply control unit 20 may control the power supply to the plurality of partial circuits 11 to 13 using the control parameter read from the nonvolatile memory.

  3 to 6 specifically show some modified examples of the semiconductor integrated circuit device 1. The configuration example of FIG. 3 includes a nonvolatile memory 41. The non-volatile memory 41 is, for example, an EPROM (Erasable Programmable Read Only Memory), an EEPROM (Electrically Erasable Programmable Read Only Memory), EFUSE, or a flash memory. The nonvolatile memory 41 stores the above-described control parameters at the time of initial setting according to control by the control parameter generation unit 40. Then, the nonvolatile memory 41 supplies control parameters to the power supply control unit 20 at the time of normal startup performed after completion of the initial setting.

  The configuration example of FIG. 4 includes a power supply control unit 20 disposed outside the semiconductor integrated circuit device 1. The configuration example of FIG. 4 may include the nonvolatile memory 41 illustrated in FIG.

  The configuration example of FIG. 5 also includes a power supply control unit 20 arranged outside the semiconductor integrated circuit device 1, similarly to the configuration example of FIG. 4. Furthermore, in the configuration example of FIG. 5, the semiconductor integrated circuit device 1 does not have the cutoff circuits 21 to 23. In the example of FIG. 5, the power supply control unit 20 supplies power cutoff control signals S11 to S13 to the power supply units 51 to 53. The power supply units 51 to 53 can supply power to the partial circuits 11 to 13, and supply and stop power according to the power cutoff control signals S <b> 11 to S <b> 13. The configuration example of FIG. 5 may include the nonvolatile memory 41 shown in FIG.

  The configuration example of FIG. 6 includes a control parameter generation unit 40 arranged outside the semiconductor integrated circuit device 1. The nonvolatile memory 41 stores the above-described control parameters at the time of initial setting according to control by the control parameter generation unit 40. Then, the nonvolatile memory 41 supplies control parameters to the power supply control unit 20 at the time of normal startup performed after completion of the initial setting. The control parameter generation unit 40 is disposed in, for example, an LSI tester. In this case, the control parameter may be written to the nonvolatile memory 41 before the semiconductor integrated circuit device 1 is shipped. In other words, during normal use after shipment of the semiconductor integrated circuit device 1, the power supply control unit 20 uses the control parameters stored in the nonvolatile memory 41 without using the control parameter generation unit 40. Make a selection.

  The configuration example shown in FIG. 3 or 4 may be combined with the configuration example shown in FIG. That is, as shown in FIG. 7, the power supply control unit 20 and the control parameter generation unit 40 may be arranged outside the semiconductor integrated circuit device 1.

<Embodiment 2>
In the present embodiment, a further specific example related to the configuration example shown in FIG. 3 will be described. FIG. 8 shows a configuration example of the semiconductor integrated circuit device 2 according to the present embodiment. In the configuration example of FIG. 8, the number of partial circuits is three as in FIG. 1, but this is only an example. The number of partial circuits may be two, or four or more.

  The configuration example of FIG. 8 includes temperature sensors 301 to 303 as specific examples of the temperature measurement unit 30. The temperature sensors 301 to 303 measure the temperatures of the partial circuits 11 to 13, respectively, and output measured temperature signals S21 to S23 indicating measured temperature data in which the measured temperature is digitized. The value of the measured temperature data has a correlation with the temperature of the partial circuit, and can be converted into Celsius temperature or absolute temperature. The measured temperature signals S21 to S23 are supplied to a write data (WD) terminal of the nonvolatile memory 41.

  The control parameter generation unit 40 controls the generation of the control parameters described in the first embodiment using the temperature measurement control signals S1 and S2 at the time of initial setting of the semiconductor integrated circuit device 2. Specifically, the control parameter generation unit 40 instructs the power supply control unit 20 to supply power to all the partial circuits 11 to 13 by supplying the control signal S1 to the power supply control unit 20. Furthermore, the control parameter generation unit 40 supplies the control signal S2 to the nonvolatile memory 41 after a predetermined time has elapsed from the power supply instruction, whereby the measured temperature signals S21 to S23 (that is, output from the temperature sensors 301 to 303) (that is, Instructs the nonvolatile memory 41 to store the measured temperature data. That is, the control signal S2 corresponds to a so-called write enable (WE) signal.

  After completion of the initial setting and during normal startup of the semiconductor integrated circuit device 2, the nonvolatile memory 41 supplies signals S31 to S33 indicating the measured temperature data of the partial circuits 11 to 13 stored in the past initial setting. Supply to the supply controller 20. Here, the signal S31 corresponds to the signal S21 indicating the measured temperature data of the partial circuit 11, the signal S32 corresponds to the signal S22 indicating the measured temperature data of the partial circuit 12, and the signal S33 indicates the measured temperature data of the partial circuit 13. Corresponds to the signal S23 shown.

  FIG. 9 shows a configuration example of the cutoff circuit 21. In the example of FIG. 9, the cutoff circuit 21 is configured by a plurality of P-channel MOS (Metal Oxide Semiconductor) transistors. A power cutoff control signal S11 is connected to the gate electrode of each transistor. When the power cutoff control signal S11 is logic “1”, the transistor is turned off, and the power from the power supply wiring 50 is cut off and not supplied to the partial circuit 11. When the power shutoff control signal S11 is logic “0”, the transistor is turned on, and the power from the power supply wiring 50 is supplied to the partial circuit 11. The cutoff circuits 22 and 23 may have the same configuration as the cutoff circuit 21.

  FIG. 10 shows a configuration example of the nonvolatile memory 41 and the power supply control unit 20. In the example of FIG. 10, the measurement signals S21 to S23 (that is, measurement temperature data) by the temperature sensors 301 to 303 are each represented by a 16-bit binary number. The nonvolatile memory 41 stores three measured temperature data given to the write data (WD) terminal according to the control signal S2 (that is, the WE signal) supplied to the write enable (WE) terminal. Then, the nonvolatile memory 41 outputs measured temperature data corresponding to the partial circuits 11 to 13 as signals S31 to S33, respectively. Hereinafter, for convenience of explanation, the values of the signals S31 to S33 are represented by symbols A, B, and C, respectively.

  The measured temperature data A, B, and C indicated by the signals S31 to S33 are typically in a non-energized state where the heat is sufficiently uniformly diffused to the semiconductor substrate and the partial circuits 11 to 13 have substantially the same temperature. In this state, power is simultaneously supplied to the partial circuits 11 to 13, the partial circuits 11 to 13 are operated under the same conditions, and the temperatures of the partial circuits 11 to 13 after a predetermined time has elapsed are shown. As already described, the temperature increase rate is smaller in the partial circuit with lower power consumption. For this reason, when selecting a partial circuit to be used (that is, supplying power), by selecting and using the partial circuit corresponding to the measured temperature data A, B, C having a small value, the semiconductor integrated circuit The power consumption of the device 2 can be reduced.

  The permutation when selecting the three measured temperature data A, B, and C in ascending order is 6 patterns as shown in FIG. If the corresponding permutation pattern is found, it is possible to select and use the partial circuits with the smallest temperature rise based on this pattern. In the determination of the permutation pattern, it is necessary to uniquely determine the pattern even when the measured temperature data A, B, and C include the same value. The determination formula shown in the table of FIG. 11 shows an example. According to the determination formula of FIG. 11, only one of the six pattern determination formulas is true for an arbitrary set of values (A, B, C), and the corresponding unique pattern is determined.

  Next, the power supply control unit 20 in FIG. 10 will be described. In the example of FIG. 10, the power supply control unit 20 is configured by a combinational logic circuit. The comparison circuits 201 to 203, the inverting circuits 211 to 213, and the AND circuits 221 to 226 in FIG. 10 constitute a pattern determination circuit based on the determination formula shown in FIG. According to the configuration example of FIG. 10, for any combination of the measured temperature data A, B, and C indicated by the signals S31 to S33, only one output of the AND circuits 221 to 226 is true, that is, logic. Operates to be "1". The logic “1” outputs of the AND circuits 221 to 226 correspond to the patterns 1 to 6 in FIG. 11, respectively.

  The selection control signals S41 to S43 supplied to the power supply control unit 20 of FIG. 10 indicate the number of required partial circuits as shown in the table of FIG. The signals S41 to S43 are given to the power supply control unit 20 from the internal circuit of the semiconductor integrated circuit device 2 or from the outside of the semiconductor integrated circuit device 2.

  The OR circuits 231 to 233 and the AND circuits 241 to 243 have the lowest measured temperature according to the permutation pattern indicated by the AND circuits 221 to 226 when the selection control signal S41 is logic “1”. A partial circuit that is small (in other words, low power consumption) is determined. The OR circuits 251 to 253 and the AND circuits 261 to 263 determine the partial circuit having the second lowest measured temperature according to the permutation pattern when the selection control signal S42 is logic “1”. The NOR circuits 271 to 273 determine a partial circuit to which power is to be supplied based on the determination result based on the above-described permutation pattern and the value of the control signal S43, and output the power cutoff control signals S11 to S13, respectively. The power cut-off control signals S11 to S13 instruct the cut-off circuits 21 to 23 to turn off the power when the logic is "1" and supply the power when the logic is "0". The selection control signal S43 indicates that all of the three partial circuits 11 to 13 are used. When this signal is logic “1”, the power cutoff control signals S11 to S13 are all logic “0”. Become.

  Subsequently, an example of the operation at the time of initial setting of the semiconductor integrated circuit device 2 will be described with reference to the timing chart of FIG. It is assumed that the power supply to the semiconductor integrated circuit device 2 is cut off at time T0, and that heat is sufficiently uniformly diffused in the semiconductor substrate included in the semiconductor integrated circuit device 2. At this time, the temperatures of the partial circuits 11 to 13 are substantially equal.

  At time T1, (a) power is supplied to the semiconductor integrated circuit device 2, and the semiconductor integrated circuit device 2 is reset. At this time, the (b) temperature measurement control signal S1 output by the control parameter generation unit 40 is logic “0”. Therefore, the power supply control unit 20 has not received a power supply instruction for the temperature measurement (in other words, measurement of the temperature rise rate, in other words, power consumption measurement) for the partial circuits 11 to 13. The (i) temperature measurement control signal S2 output by the control parameter generation unit 40 is also logic “0”. Therefore, the nonvolatile memory 41 has not received an instruction to store measured temperature data (measured temperature signals S21 to S23) output from the temperature sensors 301 to 303.

  At time T2, for example, when an instruction to start the initial setting is given to the control parameter generation unit 40 from the outside of the semiconductor integrated circuit device 2, the control parameter generation unit 40 outputs logic “1” to the signal S1 (b). That is, the control parameter generation unit 40 instructs the power supply control unit 20 to supply power to the partial circuits 11 to 13. At this time, in the configuration example of FIG. 10, the NOR circuits 271 to 273 receive the control signal S1, and (c to e) output logic “0” to the power cutoff control signals S11 to S13. Thereby, power supply is instruct | indicated with respect to the cutoff circuits 21-23. The cutoff circuits 21 to 23 start supplying power from the power supply wiring 50 to each of the partial circuits 11 to 13.

  The partial circuits 11 to 13 to which power is supplied operate and basically perform the same operation. That is, the partial circuits 11 to 13 consume a certain amount of leakage current based on the characteristics of the semiconductor process, and for example, a clock signal is supplied to generate dynamic power consumption. In addition, for example, a memory BIST (Built-In Self Test) or a logic BIST that is a self-diagnosis function incorporated in the semiconductor integrated circuit device 2 is operated, and power consumption reflecting manufacturing variations is generated in each of the partial circuits 11 to 13. Occur. Along with this, almost all the electric power consumed in the partial circuits 11 to 13 is converted into heat, and the temperature of the semiconductor substrate rapidly rises in each partial circuit. Since the temperature rise rate at this time has a correlation with the power consumption reflecting the manufacturing variation, the outputs of the temperature sensors 301 to 303 arranged corresponding to the respective partial circuits show different values. The temperature sensors 301 to 303 continuously output measured temperature data related to the partial circuits 11 to 13 as (f to h) signals S21 to S23.

  At time T3, the control parameter generation unit 40 detects the passage of a predetermined time required for measurement, and (i) outputs a logic “1” to the temperature measurement control signal S2. Thereby, the control parameter generation unit 40 instructs the nonvolatile memory 41 to store the measured temperature data S21 to S23 output from the temperature sensors 301 to 303. Note that the optimum value of the predetermined time required for the measurement from time T2 to T3 varies depending on the heat capacity of the semiconductor substrate and the power consumption of the partial circuits 11 to 13, that is, the heat generation amount. Specifically, the time T3 may be a timing before the heat generation and heat dissipation of the semiconductor integrated circuit device 2 are balanced and the temperature rise of the partial circuits 11 to 13 is stopped.

  At time T 4, when the control parameter generation unit 40 finishes outputting the predetermined pulse width to the nonvolatile memory 41, (i) returns the control signal S 2 to logic “0”, thereby instructing storage to the nonvolatile memory 41. Exit. Next, at time T5, the control parameter generation unit 40 (a) returns the control signal S1 to logic “0”, thereby canceling the power supply instruction to the partial circuits 11 to 13 for temperature measurement.

  After time T <b> 5, the power supply control unit 20 refers to the measured temperature data of each of the partial circuits 11 to 13 recorded in the nonvolatile memory 41 to determine a partial circuit that supplies power. Here, the measured temperature data of each of the partial circuits 11 to 13 recorded in the nonvolatile memory 41 is data measured by actually supplying power to the partial circuits 11 to 13 in the past, and is included in the partial circuits 11 to 13. This is a control parameter that reflects the temperature rise rate, that is, power efficiency. The power supply control unit 20 is a portion selected and selected by a necessary number of partial circuits in order from a partial circuit having a small temperature increase rate (in other words, having high power efficiency, and in other words, low power consumption) among the partial circuits 11 to 13. Power only the circuit. In the configuration example illustrated in FIG. 10, the power supply control unit 20 selects a required number of partial circuits in order from the partial circuit with the lowest power consumption based on the instructions of the selection control signals S41 to S43. The power cutoff control signals S11 to S13 are output from the NOR circuits 271 to 273.

  The initial setting described with reference to FIG. 13 can be performed using an LSI tester in the inspection process of the semiconductor integrated circuit device 2, for example. This initial setting can also be carried out by using the initialization / diagnosis function of the device / system after mounting the semiconductor integrated circuit device 2 on a printed board or the like and mounting it on the device / system.

  Next, a normal startup operation performed after completion of the initial setting will be described with reference to the timing chart of FIG. At time T0, power supply to the semiconductor integrated circuit device 2 is cut off. However, the measured temperature data (that is, control parameters) stored in the nonvolatile memory 41 is saved even when the power of the semiconductor integrated circuit device 2 is turned off.

  At time T1, (a) power is supplied to the semiconductor integrated circuit device 2, and the semiconductor integrated circuit device 2 is reset. At this time, both (b) temperature measurement control signal S1 and (c) control signal S2 are logic "0". That is, there is no temperature measurement instruction for generating control parameters. During normal activation, the control parameter generation unit 40 is not instructed to start the initial setting, and the states of the signals S1 and S2 are maintained as logic "0".

  In addition, from time T1 to time T2, (d to f) selection control signals S41 to S43 are all logic “0”. That is, the selection control signals S41 to S43 indicate that the number of necessary partial circuits is zero. According to the configuration example of FIG. 10, the NOR circuits 271 to 273 output logic “1” to the power cutoff control signals 131 to 133 (g to h). That is, the power supply control unit 20 instructs the cutoff circuits 21 to 23 to shut off the power supply to the partial circuits 11 to 13.

  At time T2, (e) the selection control signal S41 becomes logic “1”, and the number of necessary partial circuits is changed to one. At this time, the power supply control unit 20 refers to the measured temperature data (that is, the control parameter) of each partial circuit stored in the nonvolatile memory 41 and has the lowest measured temperature stored in the nonvolatile memory 41 ( That is, one partial circuit having the lowest temperature rise rate (in other words, the highest power efficiency) is selected. Here, it is assumed that the partial circuit 12 is selected. Then, the power supply control unit 20 sets the power cut-off control signal S12 to be given to the cut-off circuit 22 to logic "0" in order to start the power supply to the partial circuit 12.

  Explaining the operation at time T2 according to the configuration example of FIG. 10, it is determined which one of the six permutation patterns shown in FIG. 11 corresponds, and only one output of the AND circuits 221 to 226 is true. That is, the logic is “1”. Since the selection control signals S41 to S43 indicate that the required number of partial circuits is 1, the lowest measured temperature stored in the nonvolatile memory 41 according to the determined permutation pattern (that is, the rate of temperature increase is The partial circuit that is the smallest (in other words, has the highest power efficiency) is selected. Here, it is assumed that the temperature rise rate of the partial circuit 12 is the smallest, the temperature rise rate of the partial circuit 13 is small, and the temperature rise rate of the partial circuit 11 is the largest. Therefore, the outputs of the comparison circuits 201, 202, and 203 are logic “0”, “1”, and “0”, respectively. Therefore, the output of the AND circuit 224 becomes logic “1”, indicating that the permutation of the pattern 4 shown in FIG. The outputs of the other AND circuits 221, 222, 223, 225, and 226 are logic "0". Based on the determined permutation pattern and the instructions of (d to f) selection control signals S41 to S42, the NOR circuit 272 outputs (0) logic “0” to the power cutoff control signal S12. Thereby, power supply to the partial circuit 12 is instructed. On the other hand, logic (1) is output to (g) control signal S11 and (i) control signal S13, and an instruction to cut off power supply to partial circuits 11 and 13 is given.

  At time T3, (e) the selection control signal S42 also becomes logic “1”, and the number of necessary partial circuits changes to two. Describing according to the configuration example of FIG. 10 and the above assumption (B <C <A), the measured temperature data output from the nonvolatile memory 41 does not change from the time T2, so the permutation pattern to be determined remains the pattern 4. . When the selection control signal S42 becomes logic "1", power supply to the partial circuit (that is, the partial circuit 13) with the second lowest power consumption is instructed by the determined permutation pattern 4. Specifically, the output of the AND circuit 263 changes to logic “1”, and the NOR circuit 273 sets the output to the power cutoff control signal S13 to logic “0”. As a result, power is supplied to the partial circuit 13.

  At time T4, (f) the selection control signal S43 also becomes logic “1”, and the number of necessary partial circuits is changed to three. Describing according to the configuration example of FIG. 10, all of the NOR circuits 271 to 273 output logic “0” regardless of the determination of the permutation pattern based on the measured temperature data (that is, the control parameter) stored in the nonvolatile memory 41. To do. That is, the supply of power to all the partial circuits 11 to 13 is instructed by the (g to h) power control signals S11 to S13.

<Other embodiments>
In the second embodiment, the example in which the power supply control unit 20 is configured by a combinational logic circuit has been described. However, the operation of the power supply control unit 20, specifically, “a partial circuit that has a relatively small temperature rise rate when power is supplied to the partial circuits 11 to 13 in the past is selected from the partial circuits 11 to 13. The operation “selectively preferentially selected as at least one circuit to be supplied with power” may be realized by causing a computer such as a microprocessor to execute a program. The operation of the control parameter generation unit 40, specifically, “reflects the temperature rise rate of each partial circuit when power is supplied to the partial circuits 11 to 13 in the past. The operation | movement which produces | generates the control parameter used in order to control supply and stop of the power supply to "may be implement | achieved by making a computer, such as a microprocessor, run a program.

  This program can be stored using various types of non-transitory computer readable media and supplied to a computer. Non-transitory computer readable media include various types of tangible storage media. Examples of non-transitory computer-readable media include magnetic recording media (for example, flexible disks, magnetic tapes, hard disk drives), magneto-optical recording media (for example, magneto-optical disks), CD-ROMs (Read Only Memory), CD-Rs, CD-R / W and semiconductor memory (for example, mask ROM, PROM (Programmable ROM), EPROM (Erasable PROM), flash ROM, RAM (random access memory)) are included. The program may also be supplied to the computer by various types of transitory computer readable media. Examples of transitory computer readable media include electrical signals, optical signals, and electromagnetic waves. The temporary computer-readable medium can supply the program to the computer via a wired communication path such as an electric wire and an optical fiber, or a wireless communication path.

  The plurality of embodiments described above can be combined as appropriate. Furthermore, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention described above.

  Part or all of the plurality of embodiments described above can be described as in the following supplementary notes, but is not limited thereto.

(Appendix 1)
A plurality of partial circuits each having the same function;
Temperature measuring means for measuring the temperature of each of the plurality of partial circuits;
A partial circuit that is capable of controlling supply and stop of power to each of the plurality of partial circuits and that has a relatively low temperature rise rate when power is supplied to the plurality of partial circuits in the past. Power supply control means for preferentially selecting at least one circuit to be supplied with power among the circuits;
A semiconductor integrated circuit device.
(Appendix 2)
The power supply control means selects the at least one circuit based on a control parameter reflecting a temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits in the past. A semiconductor integrated circuit device according to 1.
(Appendix 3)
The semiconductor integrated circuit device according to claim 2, wherein the control parameter includes a parameter based on a temperature of each partial circuit measured after power supply to the plurality of partial circuits is started substantially simultaneously.
(Appendix 4)
The semiconductor integrated circuit device according to appendix 2, wherein the control parameter includes a parameter capable of specifying a difference in temperature increase rate among the plurality of partial circuits.
(Appendix 5)
The control parameter includes a first measurement temperature of each partial circuit before starting power supply to the plurality of partial circuits substantially simultaneously and a second measurement of each partial circuit after starting the power supply. 3. The semiconductor integrated circuit device according to appendix 2, including a parameter based on a difference from temperature.
(Appendix 6)
The power supply control means preferentially selects, from among the plurality of partial circuits, a partial circuit having a relatively high temperature rise rate during power supply as a partial circuit whose power supply is stopped. The semiconductor integrated circuit device according to claim 1.
(Appendix 7)
6. The semiconductor integrated circuit device according to any one of appendices 2 to 5, further comprising generating means for generating the control parameter based on a measurement result by the temperature measuring means.
(Appendix 8)
The generating means is configured to measure the temperature of each partial circuit measured by the temperature measuring means after a predetermined time has elapsed after starting the power supply to the plurality of partial circuits substantially simultaneously at the time of initial setting of the semiconductor integrated circuit device. 8. The semiconductor integrated circuit device according to appendix 7, wherein the control parameter is generated based on the acquired temperature.
(Appendix 9)
A nonvolatile memory capable of storing the control parameters;
The power supply control means acquires the control parameter from the nonvolatile memory;
The semiconductor integrated circuit device according to any one of appendices 2 to 5, 7, and 8.
(Appendix 10)
10. The semiconductor integrated circuit device according to any one of appendices 1 to 9, wherein the temperature measuring unit includes a plurality of temperature sensor circuits each corresponding one-to-one with any of the plurality of partial circuits.
(Appendix 11)
A plurality of partial circuits each having the same function;
Temperature measuring means for measuring the temperature of each of the plurality of partial circuits;
A control parameter that reflects the temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits in the past, and is used to control the supply and stop of power to each of the plurality of partial circuits. Non-volatile memory storing
A semiconductor integrated circuit device.
(Appendix 12)
12. The semiconductor integrated circuit device according to appendix 11, wherein the control parameter includes a parameter based on a temperature of each partial circuit measured after power supply to the plurality of partial circuits is started substantially simultaneously.
(Appendix 13)
12. The semiconductor integrated circuit device according to appendix 11, wherein the control parameter includes a parameter capable of specifying a difference in temperature increase rate among the plurality of partial circuits.
(Appendix 14)
The control parameter includes a first measurement temperature of each partial circuit before starting power supply to the plurality of partial circuits substantially simultaneously and a second measurement of each partial circuit after starting the power supply. 12. The semiconductor integrated circuit device according to appendix 11, including a parameter based on a difference from temperature.
(Appendix 15)
15. The semiconductor integrated circuit device according to any one of appendices 11 to 14, further comprising a generating unit that generates the control parameter based on a measurement result by the temperature measuring unit.
(Appendix 16)
In the initial setting of the semiconductor integrated circuit device, the generating unit is configured to measure the temperature of each partial circuit measured by the temperature measuring unit after a predetermined time has elapsed since power supply to the plurality of partial circuits was started substantially simultaneously. The semiconductor integrated circuit device according to appendix 15, wherein the control parameter is generated based on the acquired temperature.
(Appendix 17)
The semiconductor according to any one of appendices 8 to 12, further comprising power supply control means for controlling supply and stop of power to each of the plurality of partial circuits based on the control parameter acquired from the nonvolatile memory. Integrated circuit device.
(Appendix 18)
When the power supply control means selects at least one circuit to which power is supplied from the plurality of partial circuits, the temperature increase rate at the time of power supply is relatively small based on the control parameter. 18. The semiconductor integrated circuit device according to appendix 17, wherein a circuit is preferentially selected as the at least one circuit.
(Appendix 19)
A plurality of partial circuits each having the same function;
Temperature measuring means for measuring the temperature of each of the plurality of partial circuits;
A control parameter that reflects the temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits in the past, and is used to control the supply and stop of power to each of the plurality of partial circuits. Generating means for generating
A semiconductor integrated circuit device.
(Appendix 20)
20. The semiconductor integrated circuit device according to appendix 19, wherein the control parameter includes a parameter based on a temperature of each partial circuit measured after power supply to the plurality of partial circuits is started substantially simultaneously.
(Appendix 21)
20. The semiconductor integrated circuit device according to appendix 19, wherein the control parameter includes a parameter capable of specifying a difference in temperature rise rate among the plurality of partial circuits.
(Appendix 22)
The control parameter includes a first measurement temperature of each partial circuit before starting power supply to the plurality of partial circuits substantially simultaneously and a second measurement of each partial circuit after starting the power supply. 20. The semiconductor integrated circuit device according to appendix 19, including a parameter based on a difference from temperature.
(Appendix 23)
In the initial setting of the semiconductor integrated circuit device, the generating unit is configured to measure the temperature of each partial circuit measured by the temperature measuring unit after a predetermined time has elapsed since power supply to the plurality of partial circuits was started substantially simultaneously. The semiconductor integrated circuit device according to any one of appendices 19 to 22, wherein the control parameter is generated based on the acquired temperature.
(Appendix 24)
A method for controlling a semiconductor integrated circuit including a plurality of partial circuits each having the same function,
Preferentially selecting a partial circuit having a relatively low temperature rise rate when power is supplied to the plurality of partial circuits in the past as at least one circuit to which power is supplied among the plurality of partial circuits. ,
A method for controlling a semiconductor integrated circuit.
(Appendix 25)
The selecting includes selecting the at least one circuit based on a control parameter reflecting a temperature increase rate of each partial circuit when power is supplied to the plurality of partial circuits in the past. The method according to appendix 24.
(Appendix 26)
The method according to claim 25, wherein the control parameter includes a parameter based on a temperature of each partial circuit measured after power supply to the plurality of partial circuits is started substantially simultaneously.
(Appendix 27)
The method according to claim 25, wherein the control parameter includes a parameter capable of specifying a difference in temperature increase rate between the plurality of partial circuits.
(Appendix 28)
The control parameter includes a first measurement temperature of each partial circuit before starting power supply to the plurality of partial circuits substantially simultaneously and a second measurement of each partial circuit after starting the power supply. 26. The method according to appendix 25, including a parameter based on a difference from temperature.
(Appendix 29)
29. The method according to any one of appendices 25 to 28, further comprising generating the control parameter based on a measurement result by the temperature measurement unit.
(Appendix 30)
In the initial setting of the semiconductor integrated circuit device, the generating includes generating each of the partial circuits measured by the temperature measuring unit after a predetermined time has elapsed since power supply to the plurality of partial circuits was started substantially simultaneously. 30. The method of claim 29, comprising obtaining a temperature and generating the control parameter based on the obtained temperature.
(Appendix 31)
A method of generating control parameters for a semiconductor integrated circuit including a plurality of partial circuits each having the same function,
A control parameter that reflects the temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits in the past, and is used to control the supply and stop of power to each of the plurality of partial circuits. Generating,
A method for generating control parameters.
(Appendix 32)
32. The method according to claim 31, wherein the control parameter includes a parameter based on a temperature of each partial circuit measured after power supply to the plurality of partial circuits is started substantially simultaneously.
(Appendix 33)
32. The method according to claim 31, wherein the control parameter includes a parameter capable of specifying a difference in temperature increase rate between the plurality of partial circuits.
(Appendix 34)
The control parameter includes a first measurement temperature of each partial circuit before starting power supply to the plurality of partial circuits substantially simultaneously and a second measurement of each partial circuit after starting the power supply. 32. The method according to appendix 31, comprising a parameter based on a difference from temperature.
(Appendix 35)
In the initial setting of the semiconductor integrated circuit device, the generating includes generating each of the partial circuits measured by the temperature measuring unit after a predetermined time has elapsed since power supply to the plurality of partial circuits was started substantially simultaneously. 35. The method according to any one of appendices 31 to 34, comprising obtaining a temperature and generating the control parameter based on the obtained temperature.
(Appendix 36)
A program for causing a computer to perform a control method of a semiconductor integrated circuit including a plurality of partial circuits each having the same function,
The method
Preferentially selecting a partial circuit having a relatively low temperature rise rate when power is supplied to the plurality of partial circuits in the past as at least one circuit to which power is supplied among the plurality of partial circuits. ,
A program comprising:
(Appendix 37)
The selecting includes selecting the at least one circuit based on a control parameter reflecting a temperature increase rate of each partial circuit when power is supplied to the plurality of partial circuits in the past. The program according to attachment 36.
(Appendix 38)
The program according to appendix 37, wherein the control parameter includes a parameter based on a temperature of each partial circuit measured after power supply to the plurality of partial circuits is started substantially simultaneously.
(Appendix 39)
The program according to appendix 37, wherein the control parameter includes a parameter capable of specifying a difference in temperature increase rate among the plurality of partial circuits.
(Appendix 40)
The control parameter includes a first measurement temperature of each partial circuit before starting power supply to the plurality of partial circuits substantially simultaneously and a second measurement of each partial circuit after starting the power supply. The program according to appendix 37, including a parameter based on a difference from temperature.
(Appendix 41)
41. The method according to any one of appendices 37 to 40, further comprising generating the control parameter based on a measurement result by the temperature measurement unit.
(Appendix 42)
A program for causing a computer to perform a method for generating control parameters relating to a semiconductor integrated circuit including a plurality of partial circuits each having the same function,
The method
A control parameter that reflects the temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits in the past, and is used to control the supply and stop of power to each of the plurality of partial circuits. Generating,
A program comprising:
(Appendix 43)
43. The program according to claim 42, wherein the control parameter includes a parameter based on a temperature of each partial circuit measured after power supply to the plurality of partial circuits is started substantially simultaneously.
(Appendix 44)
43. The program according to appendix 42, wherein the control parameter includes a parameter that can specify a difference in temperature increase rate among the plurality of partial circuits.
(Appendix 45)
The control parameter includes a first measurement temperature of each partial circuit before starting power supply to the plurality of partial circuits substantially simultaneously and a second measurement of each partial circuit after starting the power supply. 43. The program according to appendix 42, including a parameter based on a difference from temperature.
(Appendix 46)
In the initial setting of the semiconductor integrated circuit device, the generating includes generating each of the partial circuits measured by the temperature measuring unit after a predetermined time has elapsed since power supply to the plurality of partial circuits was started substantially simultaneously. 46. The program according to any one of appendices 42 to 45, including acquiring a temperature and generating the control parameter based on the acquired temperature.

DESCRIPTION OF SYMBOLS 1, 2 Semiconductor integrated circuit devices 11-13 Partial circuit 20 Power supply control part 21-23 Cutoff circuit 30 Temperature measurement part 40 Control parameter production | generation part 41 Non-volatile memory 50 Power supply wiring 51-53 Power supply part 201-203 Comparison circuit 211- 213 Inversion circuits 221 to 226 AND circuits 231 to 233 OR circuits 241 to 243 AND circuits 251 to 253 OR circuits 261 to 263 AND circuits 271 to 273 NOR circuits 301 to 303 Temperature sensor WE Write enable terminal WD Write data terminal RD Read data terminal

Claims (8)

A plurality of partial circuits each having the same function;
At the time of initial setting, temperature measuring means for measuring the temperature of each of the plurality of partial circuits,
At the time of the initial setting, based on the measurement result by the temperature measuring means, a control parameter reflecting the temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits at the time of the initial setting is generated. Generating means;
It is possible to control supply and stop of power to each of the plurality of partial circuits, and after the initial setting, using the control parameter, when power is supplied to the plurality of partial circuits at the time of the initial setting Power supply control means for preferentially selecting a partial circuit having a relatively low temperature rise rate as at least one circuit to which power is supplied among the plurality of partial circuits;
A semiconductor integrated circuit device. Wherein the control parameters include a parameter based on the temperature of each partial circuit is measured after starting the same time the power supplied to said plurality of partial circuits, the semiconductor integrated circuit device according to claim 1.   2. The semiconductor integrated circuit device according to claim 1, wherein the control parameter includes a parameter capable of specifying a difference in temperature rise rate among the plurality of partial circuits. Said generating means is obtained at the initial setting of the semiconductor integrated circuit device, the temperature of each partial circuit is measured by the temperature measuring means supplying power to said plurality of partial circuits after a predetermined time has elapsed from the start simultaneously The semiconductor integrated circuit device according to claim 1, wherein the control parameter is generated based on the acquired temperature. A plurality of partial circuits each having the same function;
At the time of initial setting, temperature measuring means for measuring the temperature of each of the plurality of partial circuits,
Reflecting the temperature rise rate of each partial circuit generated when power is supplied to the plurality of partial circuits, generated based on the measurement result by the temperature measuring means at the time of the initial setting, the plurality of the plurality of partial circuits A non-volatile memory storing control parameters used to control the supply and stop of power to each of the partial circuits;
A semiconductor integrated circuit device. A plurality of partial circuits each having the same function;
At the time of initial setting, temperature measuring means for measuring the temperature of each of the plurality of partial circuits,
At the time of the initial setting, based on the measurement result by the temperature measuring means, the temperature increase rate of each partial circuit when power is supplied to the plurality of partial circuits at the time of the initial setting is reflected. Generating means for generating control parameters used for controlling supply and stop of power to each of the partial circuits;
A semiconductor integrated circuit device. A method for controlling a semiconductor integrated circuit including a plurality of partial circuits each having the same function,
Measuring the temperature of each of the plurality of partial circuits at the time of initial setting;
At the time of initial setting, based on the measurement result obtained by measuring the temperature, a control parameter that reflects the temperature rise rate of each partial circuit when power is supplied to the plurality of partial circuits at the time of initial setting is generated. And
After the initial setting, using the control parameter, a partial circuit whose temperature rise rate is relatively small when power is supplied to the plurality of partial circuits at the time of initial setting is a power source among the plurality of partial circuits. Preferentially selecting at least one circuit to be supplied;
A method for controlling a semiconductor integrated circuit. A method of generating control parameters for a semiconductor integrated circuit including a plurality of partial circuits each having the same function,
Measuring the temperature of each of the plurality of partial circuits at the time of initial setting;
At the time of the initial setting, based on the measurement result by the temperature measuring means, the temperature increase rate of each partial circuit when power is supplied to the plurality of partial circuits at the time of the initial setting is reflected. Generating control parameters used to control the supply and shutdown of power to each of the partial circuits;
A method for generating control parameters.

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