JP5727257B2 - 圧電アクチュエータ及びその製造方法 - Google Patents
圧電アクチュエータ及びその製造方法 Download PDFInfo
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- JP5727257B2 JP5727257B2 JP2011037868A JP2011037868A JP5727257B2 JP 5727257 B2 JP5727257 B2 JP 5727257B2 JP 2011037868 A JP2011037868 A JP 2011037868A JP 2011037868 A JP2011037868 A JP 2011037868A JP 5727257 B2 JP5727257 B2 JP 5727257B2
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- piezoelectric layer
- pzt piezoelectric
- pzt
- layer
- dielectric constant
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000001704 evaporation Methods 0.000 claims description 25
- 230000008020 evaporation Effects 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 21
- 229910020684 PbZr Inorganic materials 0.000 claims description 16
- 238000010891 electric arc Methods 0.000 claims description 7
- 238000007733 ion plating Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 170
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 128
- 239000010936 titanium Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 16
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 13
- 230000003746 surface roughness Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
2:酸化シリコン層
3:Ti密着層
4:Pt下部電極層
5、5’:PZT圧電体層
5a:PbリッチPZT圧電体層
5b:PbリーンPZT圧電体層
5A:PZT圧電体層
5B:PZT圧電体層
6:Pt上部電極層
1401:真空チャンバ
1402−1:Pb蒸発源
1402−2:Zr蒸発源
1402−3:Ti蒸発源
1402−1S、1402−2S、1402−3S:蒸気量センサ
1403:ヒータ付ウェハ回転ホルダ
1403a:ウェハ
1404:圧力勾配型プラズマガン
1405:O2ガス導入口
1406:排気口
Claims (3)
- 下部電極層と、
該下部電極層上に設けられた第1の比誘電率を有する第1のPZT圧電体層と、
該第1のPZT圧電体層上に設けられた前記第1の比誘電率より小さい第2の比誘電率を有する第2のPZT圧電体層と
を具備し、
前記第1のPZT圧電体層のPbZr x Ti 1-x O 3 の組成比xが前記第2のPZT圧電体層のPbZr x Ti 1-x O 3 の組成比xより大きい圧電アクチュエータ。 - アーク放電イオンプレーティング法によってPb蒸発量、Zr蒸発量及びTi蒸発量を制御して下部電極層上にPbZrxTi1-xO3よりなる第1のPZT圧電体層を形成する第1の圧電体層形成工程と、
アーク放電イオンプレーティング法によってPb蒸発量、Zr蒸発量及びTi蒸発量を制御して前記第1のPZT圧電体層上にPbZrxTi1-xO3よりなる第2のPZT圧電体層を形成する第2の圧電体層形成工程と
を具備し、
前記第1のPZT圧電体層の第1の比誘電率より前記第2のPZT圧電体層の第2の比誘電率を小さくし、
前記第1のPZT圧電体層のPbZr x Ti 1-x O 3 の組成比xが前記第2のPZT圧電体層のPbZr x Ti 1-x O 3 の組成比xより大きい圧電アクチュエータの製造方法。 - 前記第1のPZT圧電体層形成工程及び前記第2のPZT圧電体層形成工程は同一のアーク放電イオンプレーティング装置内で連続的に実行される請求項2に記載の圧電アクチュエータの製造方法。
Priority Applications (2)
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---|---|---|---|
JP2011037868A JP5727257B2 (ja) | 2011-02-24 | 2011-02-24 | 圧電アクチュエータ及びその製造方法 |
US13/403,583 US8659214B2 (en) | 2011-02-24 | 2012-02-23 | Piezoelectric actuator including double PZT piezoelectric layers with different permitivities and its manufacturing method |
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---|---|---|---|
JP2011037868A JP5727257B2 (ja) | 2011-02-24 | 2011-02-24 | 圧電アクチュエータ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012175014A JP2012175014A (ja) | 2012-09-10 |
JP5727257B2 true JP5727257B2 (ja) | 2015-06-03 |
Family
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---|---|---|---|
JP2011037868A Active JP5727257B2 (ja) | 2011-02-24 | 2011-02-24 | 圧電アクチュエータ及びその製造方法 |
Country Status (2)
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---|---|
US (1) | US8659214B2 (ja) |
JP (1) | JP5727257B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130279044A1 (en) * | 2012-04-19 | 2013-10-24 | Sae Magnetics (H.K.) Ltd. | Thin film piezoelectric element and manufacturing method thereof, micro-actuator, head gimbal assembly and disk drive unit with the same |
CN103378286B (zh) * | 2012-04-19 | 2017-12-01 | 新科实业有限公司 | 薄膜压电元件及其制造方法、磁头折片组合及磁盘驱动器 |
JP6271333B2 (ja) * | 2014-05-09 | 2018-01-31 | スタンレー電気株式会社 | 圧電アクチュエータ及びその製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1207974A (en) * | 1966-11-17 | 1970-10-07 | Clevite Corp | Frequency selective apparatus including a piezoelectric device |
US5118982A (en) * | 1989-05-31 | 1992-06-02 | Nec Corporation | Thickness mode vibration piezoelectric transformer |
JPH04147964A (ja) * | 1990-10-11 | 1992-05-21 | Sharp Corp | 強誘電体薄膜の製造方法 |
JP3695625B2 (ja) | 1998-09-21 | 2005-09-14 | セイコーエプソン株式会社 | 圧電体素子およびその製造方法 |
JP3517876B2 (ja) * | 1998-10-14 | 2004-04-12 | セイコーエプソン株式会社 | 強誘電体薄膜素子の製造方法、インクジェット式記録ヘッド及びインクジェットプリンタ |
JP2001223403A (ja) | 2000-02-08 | 2001-08-17 | Matsushita Electric Ind Co Ltd | 強誘電体薄膜およびその形成方法とこれを用いた強誘電体薄膜素子 |
JP4138196B2 (ja) | 2000-02-18 | 2008-08-20 | スタンレー電気株式会社 | 強誘電体薄膜の製造方法及びその製造装置 |
JP2002214430A (ja) * | 2001-01-19 | 2002-07-31 | Oyokoden Lab Co Ltd | 光分散補償素子 |
JP4662112B2 (ja) * | 2001-09-05 | 2011-03-30 | 独立行政法人産業技術総合研究所 | 強誘電体薄膜及びその製造方法 |
JP2003188431A (ja) | 2001-12-18 | 2003-07-04 | Matsushita Electric Ind Co Ltd | 圧電素子、インクジェットヘッドおよびそれらの製造方法、並びにインクジェット式記録装置 |
JP2004186574A (ja) * | 2002-12-05 | 2004-07-02 | Matsushita Electric Ind Co Ltd | 圧電体薄膜素子およびインクジェット記録装置ならびにその製造方法 |
JP2004239979A (ja) * | 2003-02-03 | 2004-08-26 | Murata Mfg Co Ltd | 強誘電体薄膜二次元フォトニック結晶の製造方法および光素子 |
JP2007335779A (ja) * | 2006-06-19 | 2007-12-27 | Matsushita Electric Ind Co Ltd | 圧電体薄膜素子、インクジェットヘッドおよびインクジェット式記録装置 |
JP2013161896A (ja) * | 2012-02-03 | 2013-08-19 | Stanley Electric Co Ltd | 圧電アクチュエータ及びその製造方法 |
-
2011
- 2011-02-24 JP JP2011037868A patent/JP5727257B2/ja active Active
-
2012
- 2012-02-23 US US13/403,583 patent/US8659214B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8659214B2 (en) | 2014-02-25 |
US20120217847A1 (en) | 2012-08-30 |
JP2012175014A (ja) | 2012-09-10 |
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