JP5688911B2 - Film forming apparatus, system, and film forming method - Google Patents

Description

  The present invention relates to a film forming apparatus for generating metal nanoparticles, a system including the film forming apparatus and a nano structure manufacturing apparatus for manufacturing a nano structure, and a film forming method.

  Metal nanoparticles with diameters on the order of nanometers are known to have new chemical, optical, and electromagnetic functions compared to metal particles with larger sizes due to quantum size effects. Use in various fields is expected. For this reason, various studies have been conducted to produce metal nanoparticles.

  As a method for producing metal nanoparticles, there are a chemical synthesis method, a mechanical production method, and an electrical production method. Among these, the mechanical manufacturing method that uses mechanical force to pulverize makes it difficult to synthesize high-purity particles due to mixing of impurities in the process, and nano-sized uniform particles cannot be formed.

  In the case of an electrical production method by electrolysis, the production time is long, the concentration is low, and the efficiency is poor.

  Chemical synthesis methods include a gas phase method and a liquid phase method (liquid phase reduction method). In the vapor phase method, metal vapor evaporated from a high temperature in the gas phase is supplied to collide with gas molecules, and the metal nanoparticles are extracted by rapidly cooling the vapor. In the case of a gas phase method using plasma or a gas evaporation method, an apparatus becomes expensive. Therefore, a liquid phase method capable of synthesizing uniform metal nanoparticles at low cost is mainly used.

  In the liquid phase method, a reduction reaction is used in the liquid phase using an electron beam (see, for example, Patent Document 1). Specifically, for example, in the liquid phase method, a metal cation solution and a reducing agent solution are added to a reaction vessel equipped with a stirrer, thereby promoting the formation and growth of nuclei to obtain metal nanoparticles. In addition, methods for obtaining metal nanoparticles by arc discharge or laser ablation have been proposed.

JP 2006-299354 A

  However, in the conventional production method, it is required to separate the catalyst and the carrier and hold the metal nanoparticles in a stable dispersed state. Therefore, in order to grow carbon nanotubes or silicon nanowires from metal nanoparticles, it was necessary to introduce the metal nanoparticles into the deposition chamber in a state where the metal nanoparticles were dispersed.

  On the other hand, in normal air (in an oxygen atmosphere), metal nanoparticles have a large surface area and are vigorously oxidized and are difficult to handle, and it is necessary to mix metal nanoparticles with a dispersion stabilizer to stabilize the dispersion state. Therefore, it has been performed that metal nanoparticles are mixed with a dispersion stabilizer such as PVP (polyvinylpyrrolidone) to stabilize the dispersion state. Therefore, after removing the dispersion stabilizer mixed with the metal nanoparticles, it is necessary to start the growth process of carbon nanotubes and silicon nanowires using the metal nanoparticles as seeds. However, removal of the dispersion stabilizer from the metal nanoparticles took a lot of trouble such as burning the dispersion stabilizer.

  In view of the above problems, the object of the present invention is to provide a new and improved film forming apparatus, system and film forming method capable of forming metal nanoparticles without using a dispersion stabilizer. It is to provide.

In order to solve the above-described problem, according to one aspect of the present invention, the inside of the processing container in which the substrate is held in a vacuum state and the substrate is placed, and the metal-containing raw material solution are atomized by ultrasonic waves and atomized. An ultrasonic sprayer for discharging droplets of the metal-containing raw material solution into the processing container, and a space through which the discharged droplets of the metal-containing raw material solution move when moving inside the processing container toward the substrate. And a temperature controller for thermally decomposing mist-like droplets of the released metal-containing raw material solution, and the ultrasonic sprayer has an opening in the lower portion, and the metal-containing raw material solution is and filled liquid tank is obtained by joining a transducer unit connected to the ultrasonic vibrator and the horn-shaped fitting in the opening in a liquid-tight manner with a bonding sealing elastic member, the ultrasonic nebulizer, the the processing chamber and integral with the upper part of the processing vessel The droplets are discharged from the bottom surface side of the ultrasonic sprayer into the vacuum inside the processing vessel located at the bottom thereof, and are generated from the mist-like droplets of the metal-containing raw material solution by the thermal decomposition. A film forming apparatus is provided, wherein the metal nanoparticles are formed on the substrate.

  According to such a configuration, the metal-containing raw material solution is atomized using an ultrasonic atomizer, and the atomized droplets of the metal-containing raw material solution are discharged into the processing container. The mist-like droplets of the released metal-containing raw material solution are thermally decomposed by a temperature controller provided inside the processing container. Thereby, metal nanoparticles can be generated from the mist-like droplets of the metal-containing raw material solution, and the generated metal nanoparticles can be directly formed on the substrate. As described above, according to the present invention, metal nanoparticles can be formed without using a dispersion stabilizer.

The ultrasonic atomizer may atomize the metal-containing raw material solution into droplets of nano-sized metal-containing raw material solution by ultrasonic waves.

  A reducing gas is introduced into the processing vessel, and the metal nanoparticles are reacted by reducing the mist-like droplets of the metal-containing raw material solution using the heat of the temperature controller and the introduced reducing gas. You may take it out.

  You may make it carry the droplet of the said metal containing raw material solution with the carrier gas which consists of inert gas.

  The temperature controller may take out the metal nanoparticles by a temperature controller chemical vapor deposition method using tungsten as a catalyst and a reducing gas.

  The metal nanoparticles deposited on the substrate may be a single layer film.

In order to solve the above problems, according to another aspect of the present invention, a film forming apparatus that generates metal nanoparticles from a metal-containing raw material solution, and a film forming apparatus that is connected to the film forming apparatus and carried out from the film forming apparatus. A vacuum transport mechanism for vacuum transporting the prepared substrate, and a nanostructure that is connected to the vacuum transport mechanism and that transports the vacuum transported substrate through the vacuum transport mechanism to produce a nanostructure from metal nanoparticles on the substrate An apparatus for manufacturing a body, wherein the film forming apparatus is atomized by ultrasonically atomizing a processing container in which the inside is maintained in a vacuum state and a substrate is placed, and a metal-containing raw material solution by ultrasonic waves. An ultrasonic sprayer that discharges the droplets of the released metal-containing raw material solution into the processing container, and the droplets of the discharged metal-containing raw material solution that pass when moving inside the processing container toward the substrate Disposed in the space to be released It has a mist of droplets of thermally decomposing temperature controller of the metal-containing raw material solution that is, wherein the ultrasonic nebulizer, a liquid tank in which the metal-containing raw material solution having an opening at the bottom is filled The vibrator unit in which an ultrasonic vibrator and a horn-shaped metal fitting are connected to the opening is liquid-tightly joined by a joint seal elastic body, and the ultrasonic sprayer is disposed at an upper portion of the processing container . The droplets are integrated with the processing container, and the droplets are discharged from the bottom surface side of the ultrasonic sprayer to the inside of the processing container located in the lower part thereof, and the metal-containing raw material solution is atomized by the thermal decomposition. A system is provided that deposits metal nanoparticles generated from droplets on a substrate that has been previously described.

In order to solve the above-described problem, according to another aspect of the present invention, a metal-containing raw material solution is obtained by ultrasonic waves output from an ultrasonic sprayer including a liquid tank filled with the metal-containing raw material solution. Discharging the atomized droplets of the atomized metal-containing raw material solution into a processing vessel integrated inside the ultrasonic sprayer at a lower portion of the ultrasonic sprayer, the inside of which is maintained in a vacuum state; The discharged metal-containing material solution is discharged by a temperature controller disposed in a space in the processing container that passes when the droplet of the metal-containing raw material solution moves toward the substrate placed on the processing container. Thermally decomposing mist droplets of the raw material solution; and depositing metal nanoparticles generated from the mist droplets of the metal-containing raw material solution on the substrate described above by the thermal decomposition; , only including, the ultrasonic spray Is obtained by bonding the liquid-tight by a liquid tank and the opening to the ultrasonic transducer and the horn-shaped vibrator unit connected to the fitting joint sealing elastic body having an opening at the bottom, the deposition A method is provided.

  As described above, according to the present invention, metal nanoparticles can be formed without using a dispersion stabilizer.

1 is an overall configuration diagram of a system according to an embodiment of the present invention. It is the longitudinal cross-sectional view which showed typically the film-forming apparatus which concerns on the same embodiment. It is the longitudinal cross-sectional view which showed typically the nanotube manufacturing apparatus which concerns on the same embodiment. It is the figure which showed the growth process of the nanotube concerning the embodiment.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In addition, in this specification and drawing, about the component which has the substantially same function structure, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol.

[System overall configuration]
First, the overall configuration of a system according to an embodiment of the present invention will be described with reference to FIG. The system 10 includes a film forming apparatus 100, a vacuum transfer mechanism 200, and a nanotube manufacturing apparatus 300.

  The inside of the film forming apparatus 100 is maintained in a vacuum atmosphere. The film forming apparatus 100 generates metal nanoparticles from the metal-containing raw material solution, and forms a single layer film of the metal nanoparticles on the wafer W.

  The vacuum transfer mechanism 200 is connected to each apparatus between the film forming apparatus 100 and the nanotube manufacturing apparatus 300. The wafer W is unloaded from the film forming apparatus 100 by opening the transfer valve V1, and is vacuum-transferred through the vacuum transfer mechanism 200 using a transfer mechanism such as a transfer arm (not shown), and the transfer valve V2 is opened to the nanotube manufacturing apparatus 300. It is brought in.

  The nanotube production apparatus 300 produces nanotubes by growing metal nanoparticles on the wafer W carried from the vacuum transfer mechanism 200. The nanotube manufacturing apparatus 300 is an example of a nanostructure manufacturing apparatus, and the nanotube is an example of a nanostructure. Examples of types of nanostructures include nanotubes, nanowires, metal oxide nanoparticle growths, carbon nanostructures, and the like, as metal nanoparticle growths.

[Internal configuration of deposition system]
Next, the internal configuration of the film forming apparatus 100 according to the present embodiment will be described with reference to FIG. The film forming apparatus 100 includes an ultrasonic sprayer 110 and a processing container 150. The ultrasonic sprayer 110 is integrated with the processing container 150 at the upper part of the processing container 150. The ultrasonic sprayer 110 atomizes a metal salt 122 as an example of a metal-containing raw material solution by ultrasonic waves, and discharges the atomized droplets of the metal salt 122 into the processing container 150. In the present embodiment, the ultrasonic atomizer 110 is disposed on the upper part of the processing container 150, but may be disposed inside the processing container 150.

  The ultrasonic atomizer 110 includes a liquid tank 112 having an opening at a lower portion and a vibrator unit 118 in which an ultrasonic vibrator 114 and a horn-shaped metal fitting 116 are connected to the opening by an elastic body 120 for sealing a seal. It is a liquid-tight joint. The ultrasonic atomizer 110 is in a vacuum state. The liquid tank 112 is filled with a metal salt 122 and helium gas as a carrier gas.

  Examples of the metal salt solution include a solution containing a metal that is a source of metal nanoparticles such as silver chloride and gold chloride. As the carrier gas, for example, an inert gas such as helium gas can be used. However, it is preferable to use helium as a carrier gas having good thermal conductivity when the metal salt droplets pass through a space A in which a temperature controller 152 described later is disposed.

  The ultrasonic atomizer 110 vibrates the ultrasonic vibrator 114 with the driving circuit 122 connected to the ultrasonic vibrator 114, amplifies the vibration with the horn-shaped metal fitting 116, and the liquid level of the metal salt solution 122. Atomize. As a result, the metal salt droplets are discharged from the bottom surface side of the ultrasonic atomizer 110 to the inside of the vacuum in the processing vessel 150 positioned below the ultrasonic atomizer 110 and diffuse downward. In this way, in the present embodiment, the metal salt solution can be atomized into nano-sized droplets Mb by ultrasonic waves.

  A mounting table 156 is provided at the bottom of the processing container 150. On the mounting table 156, the wafer W is mounted. An exhaust port 160 is formed at the bottom of the processing container 150. An exhaust device 158 such as a vacuum pump is connected to the exhaust port 160. The inside of the processing container 150 is kept in a vacuum state by evacuating the inside of the processing container 150 by the exhaust device 158.

  A temperature regulator 152 is installed in the center of the inside of the processing container 150. The temperature regulator 152 is mainly formed from a wire Wir formed from tungsten having a catalytic reaction. The wire Wir is not limited to tungsten, but may be any metal (high melting point material) that can withstand high temperatures. The wire Wir is wound around the entire lateral direction of the space A inside the processing container 150. The arrangement position of the temperature regulator 152 is not limited to the center of the processing container 150, and the metal salt droplet Mb released into the processing container 150 passes when moving inside the processing container 150 toward the wafer W. What is necessary is just to be arrange | positioned in the space. However, if the arrangement of the temperature regulator 152 is too close to the wafer W, the uniformity of the metal nanoparticle film formation cannot be maintained.

  Accordingly, the metal salt droplet Mb passes through the vicinity of the surface of the temperature regulator 152. A power source 154 is connected to the wire Wir. As the power source 154, a DC power source or an AC power source is usually used. Power is supplied from the power source 154 to the temperature regulator 152. The wire Wir is heated to a desired high temperature (for example, about 1000 ° C.) by the electric power output from the power source 154 and adjusted so as to maintain the temperature.

The temperature regulator 152 takes out the metal nanoparticles Ma by a temperature regulator chemical vapor deposition method using tungsten as a catalyst and a reducing gas. Specifically, when the metal salt droplet Mb passes in the vicinity of the wire Wir at a high temperature, the metal salt droplet Mb is thermally decomposed by the heat from the wire Wir, and is formed by tungsten forming the wire Wir. An oxidation reaction or a reduction reaction occurs due to the catalytic reaction. For example, in this embodiment, hydrogen gas H ₂ is introduced as the reducing gas. Then, in the space A in which the temperature regulator 152 is arranged, a reduction reaction occurs, and the metal salt (silver chloride, gold chloride, etc.) reacts with hydrogen to become a metal, and the C component contained in the metal salt droplet Mb The O component is decomposed to become a volatile substance and separated from the metal salt droplet Mb. Thereby, it is possible to remove the C component and the O component from the metal salt droplet Mb and extract only the metal nanoparticles Ma.

  The extracted metal nanoparticles Ma reach the wafer W placed under the temperature controller 152 while diffusing. Thereby, the metal nanoparticles Ma are formed on the wafer W. Thus, in the present embodiment, film formation is performed by taking advantage of diffusion of each particle when each metal nanoparticle Ma moves from top to bottom. Thereby, the uniformity of film formation can be achieved.

  The metal nanoparticles Ma formed on the wafer W are single layer films. When a plurality of layers are formed, the metal nanoparticles Ma are connected to each other. Even though the ultrasonic atomizer 110 is used to reduce the size of the nano-sized particles, they are formed as large particles on the wafer W. Thus, the role of seeding nanotubes and nanowires in the subsequent process is not fulfilled. Therefore, the number of metal nanoparticles Ma formed on the wafer W may be one layer. Therefore, it can be said that the process performed by the film forming apparatus 100 of the present embodiment is a process that hardly needs to be considered regarding the rate as compared with the normal film forming process. Therefore, in the film forming apparatus 100 of the present embodiment, there is no problem even if the film forming rate may be lowered due to the internal configuration.

Incidentally, the reducing gas may be used instead of the reducing gas other than hydrogen gas H _2. The carrier gas may be any gas as long as it is an inert gas. However, as described above, it is preferable to use helium gas as the carrier gas. This is because when the metal salt droplet Mb is transported by the helium gas as the carrier gas and passes through the space A in the vicinity of the metal wire Wir which has a catalytic reaction at a high temperature, the helium gas has a good thermal conductivity. This is because the chemical reaction of the droplet Mb is easily promoted.

  The metal nanoparticles Ma are not limited to gold and silver, for example, and may be any metal nanoparticle such as copper, nickel, or an alloy of a plurality of metals. Metal oxide nanoparticles may also be used. Examples of the metal oxide nanoparticles include titanium oxide, tungsten oxide, molybdenum oxide, iridium oxide, zinc oxide, silicon oxide, aluminum oxide, and zirconium oxide.

[Internal structure of nanotube manufacturing equipment]
Next, the internal configuration of the nanotube manufacturing apparatus 300 according to the present embodiment will be described with reference to FIG. FIG. 3 shows an RLSA (Radial Line Slot Antenna) plasma CVD apparatus as a nanotube manufacturing apparatus according to this embodiment. The nanotube manufacturing apparatus 300 is not limited to the RLSA plasma CVD apparatus, but is a capacitively coupled (parallel plate type) plasma processing apparatus, an inductively coupled plasma (ICP) plasma processing apparatus, an electron cyclotron system (ECR: Electron Cyclotron). Various plasma processing apparatus such as Resonance plasma processing apparatus can be used.

  As described above, the wafer W on which the metal nanoparticles Ma are formed is transferred to the mounting table 315 in the RLSA plasma CVD apparatus (nanotube manufacturing apparatus 300) through the vacuum transfer mechanism 200 while maintaining the vacuum state. The In the RLSA plasma CVD apparatus, metal nanoparticles are grown on the loaded wafer W to produce nanotubes.

  The RLSA plasma CVD apparatus has a cylindrical reaction vessel 302 having an open ceiling surface. A shower plate 305 is fitted into the opening on the ceiling surface. The reaction vessel 302 and the shower plate 305 are hermetically sealed by an O-ring 310 disposed between the step portion on the inner wall of the reaction vessel 302 and the lower surface outer peripheral portion of the shower plate 305, whereby a processing chamber for performing plasma processing. U is formed. For example, the reaction vessel 302 is made of a metal such as aluminum, and the shower plate 305 is made of a metal such as aluminum or a dielectric, and is electrically grounded.

  On the bottom of the reaction vessel 302, a susceptor (mounting table) 315 for mounting the wafer W is installed via an insulator 320. A high frequency power source 325b is connected to the susceptor 315 via a matching unit 325a, and a predetermined bias voltage is applied to the inside of the reaction vessel 302 by the high frequency power output from the high frequency power source 325b. A cooling jacket 335 is provided inside the susceptor 315 and supplies cooling water to cool the wafer W.

  The shower plate 305 is covered with a cover plate 340 at the top thereof. A radial line slot antenna 345 is provided on the upper surface of the cover plate 340. The radial line slot antenna 345 is provided between a slot plate 345a on a disk in which a large number of slots (not shown) are formed, an antenna body 345b on the disk holding the slot plate 345, and between the slot plate 345a and the antenna body 345b. And a slow phase plate 345c formed of a dielectric such as alumina. The radial line slot antenna 345 is provided with a microwave generator 355 via a coaxial waveguide 350.

A vacuum pump (not shown) is attached to the reaction vessel 302, and the pressure in the reaction vessel 302 is reduced to 10 ⁻⁴ to 10 by discharging the gas in the reaction vessel 302 through the gas discharge pipe 360. Hold at ^-1 Pa. In addition, the plate temperature of the wafer W is maintained at about 500 to 850 ° C. using an electric heating member and a cooling jacket 335 (not shown) disposed on the mounting table 315.

  The gas supply source 365 supplies a gas having a desired concentration into the reaction vessel 302 by controlling the opening / closing of the valve V and the opening of the mass flow controller MFC.

  In this state, microwaves are introduced into the reaction vessel 302 through the waveguide 350. In addition, a gas for generating nanotubes is introduced into the reaction vessel 302 from the gas supply source 365. The supplied gas is decomposed by microwave energy and becomes plasma. The generated plasma collides with the wafer W and reacts on the surface of the wafer W. Thereby, as shown in FIG. 4, the nanotube Mc can be grown using the metal nanoparticle Ma on the wafer W as a seed.

  The metal nanoparticle growth may be in the form of a tube or a wire. Thereby, nanotubes or nanowires can be grown using the metal nanoparticles Ma on the wafer W as seeds.

  In this way, a nanostructure such as the nanotube Mc grows as shown in FIG. 4 by the nanotube manufacturing apparatus 300 according to the present embodiment. Examples of nanostructures include fullerenes, fullerene derivatives, carbon nanotubes, carbon nanohorns, carbon nanowires, and the like.

  As described above, in the film forming apparatus 100 according to the present embodiment, the carrier is mixed with the metal salt solution, the metal salt solution is atomized by the ultrasonic sprayer 110, and the droplet Mb is disposed inside the processing container 150. To release. The mist-like droplet Mb of the released metal salt solution is thermally decomposed by a temperature regulator 152 provided inside the processing container 150. As a result, the C component and the O component contained in the metal salt droplet Mb are decomposed into volatile substances and discharged out of the processing vessel. Thereby, it is possible to remove the C component and the O component from the metal salt droplet Mb and extract only the metal nanoparticles Ma.

  In normal air (in an oxygen atmosphere), the metal nanoparticles have a large surface area and oxidize vigorously, making it difficult to handle them. It is necessary to stabilize the dispersion state by mixing the metal nanoparticles with a dispersion stabilizer. However, in the system 10 according to the present embodiment, the metal nanoparticles Ma on the wafer W are transferred from the film forming apparatus 100 to the nanotube manufacturing apparatus 300 via the vacuum transfer mechanism 200 without being exposed to the atmosphere.

  Further, the nanotube production apparatus 300 also grows the nanotube Mc from the metal nanoparticles Ma in a vacuum atmosphere. Thus, in this embodiment, since all processes are performed in a vacuum atmosphere, the dispersion stabilizer for metal nanoparticles can be made unnecessary. This eliminates the step of removing the dispersion stabilizer before starting the growth process.

  In the film forming apparatus according to the above-described embodiment, the operations of the respective units are related to each other, and can be replaced as a series of operations and a series of processes in consideration of the mutual relationship. Thereby, embodiment of the film-forming apparatus can be made into embodiment of the film-forming method.

  Thereby, the metal-containing raw material solution is atomized by ultrasonic waves output from the ultrasonic sprayer, and the atomized metal-containing raw material solution droplets are discharged into a processing container whose inside is maintained in a vacuum state; and The discharged metal-containing raw material solution droplets are discharged by a temperature controller disposed in a space in the processing container that passes when moving toward the substrate placed on the processing container. Thermally decomposing mist-like droplets of the metal-containing raw material solution, and depositing metal nanoparticles generated from the mist-like droplets of the metal-containing raw material solution on the substrate described above by the pyrolysis The embodiment of the film forming method including the step of performing can be realized.

  The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious that a person having ordinary knowledge in the technical field to which the present invention pertains can come up with various changes or modifications within the scope of the technical idea described in the claims. Of course, it is understood that these also belong to the technical scope of the present invention.

  For example, in the above embodiment, the nanotube is grown by the nanotube manufacturing apparatus as an example of the nanostructure manufacturing apparatus, but the present invention is not limited to such an example. In the nanostructure manufacturing apparatus according to the present invention, fullerenes, fullerene derivatives, carbon nanotubes, carbon nanohorns, carbon nanowires, and the like can be manufactured as nanostructures.

  Further, for example, in the above embodiment, the metal nanoparticles are formed on the wafer. However, the present invention is not limited to this example, and the metal nanoparticles may be formed on the substrate.

DESCRIPTION OF SYMBOLS 10 System 100 Film-forming apparatus 110 Ultrasonic sprayer 112 Liquid tank 114 Ultrasonic vibrator 116 Horn-shaped metal fitting 118 Vibrator unit 120 Elastic body for joining seals 122 Drive circuit 150 Processing container 152 Temperature controller 154 Power supply 156 Mounting stand 158 Exhaust Device 160 Exhaust port 200 Vacuum transport mechanism 300 Nanotube production device 304 Reaction vessel 306 Waveguide 308 Microwave source 310 Gas supply source 312 Gas line 314 Exhaust port 316 Exhaust device 318, 320, 322 Magnet coil Ma Metal nanoparticle Mb Metal salt Droplet Mc Nanotube W Wafer Wire

Claims (8)

A processing container in which the inside is maintained in a vacuum state and a substrate is placed;
An ultrasonic atomizer that atomizes the metal-containing raw material solution by ultrasonic waves and discharges the atomized droplets of the metal-containing raw material solution into the processing container;
The discharged metal-containing raw material solution droplets are disposed in a space through which the droplets of the metal-containing raw material solution pass when moving toward the substrate inside the processing container. A temperature regulator for pyrolysis, and
The ultrasonic sprayer is used for bonding and sealing a liquid tank having an opening at the bottom and filled with the metal-containing raw material solution, and a vibrator unit in which an ultrasonic vibrator and a horn-shaped metal fitting are connected to the opening. It is liquid-tightly joined by an elastic body,
The ultrasonic sprayer is integrated with the processing container at the upper part of the processing container, and the droplets are discharged from the bottom side of the ultrasonic sprayer to the vacuum inside the processing container located at the lower part thereof,
A film forming apparatus, wherein metal nanoparticles generated from mist droplets of the metal-containing raw material solution by the thermal decomposition are formed on the substrate. The film forming apparatus according to claim 1, wherein the ultrasonic sprayer atomizes the metal-containing raw material solution into droplets of a nano-sized metal-containing raw material solution by ultrasonic waves . Introducing a reducing gas into the processing vessel;
The metal nanoparticles are taken out by reducing the mist-like droplets of the metal-containing raw material solution using the heat of the temperature controller and the introduced reducing gas, and taking out the metal nanoparticles. The film-forming apparatus of description. The film forming apparatus according to claim 3, wherein the temperature regulator takes out the metal nanoparticles by a temperature regulator chemical vapor deposition method using tungsten as a catalyst and a reducing gas .   The film-forming apparatus according to claim 1, wherein the droplets of the metal-containing raw material solution are transported by a carrier gas made of an inert gas. The film formation apparatus according to claim 1, wherein the metal nanoparticles attached on the substrate are a single layer film . A film forming apparatus for generating metal nanoparticles from a metal-containing raw material solution;
  A vacuum transfer mechanism connected to the film forming apparatus and for vacuum transferring a substrate unloaded from the film forming apparatus;
  A nanostructure manufacturing apparatus that is coupled to the vacuum transfer mechanism, carries a substrate that has been vacuum transferred through the vacuum transfer mechanism, and manufactures a nanostructure from metal nanoparticles on the substrate; ,
  The film forming apparatus includes:
  A processing container in which the inside is maintained in a vacuum state and a substrate is placed;
  An ultrasonic atomizer that atomizes the metal-containing raw material solution by ultrasonic waves and discharges the atomized droplets of the metal-containing raw material solution into the processing container;
  The discharged metal-containing raw material solution droplets are disposed in a space through which the droplets of the metal-containing raw material solution pass when moving toward the substrate inside the processing container. A temperature regulator for pyrolysis, and
  The ultrasonic sprayer is used for bonding and sealing a liquid tank having an opening at the bottom and filled with the metal-containing raw material solution, and a vibrator unit in which an ultrasonic vibrator and a horn-shaped metal fitting are connected to the opening. It is liquid-tightly joined by an elastic body,
  The ultrasonic sprayer is integrated with the processing container at the upper part of the processing container, and the droplets are discharged from the bottom side of the ultrasonic sprayer to the vacuum inside the processing container located at the lower part thereof,
  A system in which metal nanoparticles generated from mist-like droplets of the metal-containing raw material solution by the thermal decomposition are formed on a substrate placed as described above. The metal-containing raw material solution is atomized by ultrasonic waves output from an ultrasonic sprayer equipped with a liquid tank filled with the metal-containing raw material solution, and the atomized droplets of the metal-containing raw material solution are in a vacuum state. And is released into a processing vessel integrated with the ultrasonic sprayer at a lower portion of the ultrasonic sprayer, and
  The discharged metal-containing raw material solution droplets are released by a temperature controller disposed in a space in the processing container that passes when moving toward the substrate placed on the processing container. Pyrolyzing the mist-like droplets of the metal-containing raw material solution;
  Depositing metal nanoparticles generated from the mist-like droplets of the metal-containing raw material solution by the thermal decomposition on the previously placed substrate, and
  The ultrasonic sprayer is a liquid tank having an opening in the lower part, and a vibrator unit in which an ultrasonic vibrator and a horn-shaped metal fitting are connected to the opening in a liquid-tight manner by a joint seal elastic body. There is a film forming method.

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