JP5678303B2 - Red phosphor, method for manufacturing red phosphor, light emitting device package, and lighting device - Google Patents

Red phosphor, method for manufacturing red phosphor, light emitting device package, and lighting device Download PDF

Info

Publication number
JP5678303B2
JP5678303B2 JP2010237961A JP2010237961A JP5678303B2 JP 5678303 B2 JP5678303 B2 JP 5678303B2 JP 2010237961 A JP2010237961 A JP 2010237961A JP 2010237961 A JP2010237961 A JP 2010237961A JP 5678303 B2 JP5678303 B2 JP 5678303B2
Authority
JP
Japan
Prior art keywords
light
light emitting
led
phosphor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010237961A
Other languages
Japanese (ja)
Other versions
JP2011089121A (en
JP2011089121A5 (en
Inventor
ホ リュウ、ジョン
ホ リュウ、ジョン
ソー ユーン、チュル
ソー ユーン、チュル
シク ウォン、ヒョン
シク ウォン、ヒョン
Original Assignee
三星電子株式会社Samsung Electronics Co.,Ltd.
三星電子株式会社Samsung Electronics Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020090101439A priority Critical patent/KR101565988B1/en
Priority to KR10-2009-0101439 priority
Application filed by 三星電子株式会社Samsung Electronics Co.,Ltd., 三星電子株式会社Samsung Electronics Co.,Ltd. filed Critical 三星電子株式会社Samsung Electronics Co.,Ltd.
Publication of JP2011089121A publication Critical patent/JP2011089121A/en
Publication of JP2011089121A5 publication Critical patent/JP2011089121A5/en
Application granted granted Critical
Publication of JP5678303B2 publication Critical patent/JP5678303B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883Arsenides; Nitrides; Phosphides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
    • C09K11/7734Aluminates; Silicates
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0041Processes relating to wavelength conversion elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/508Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Description

The present invention relates to a red phosphor, and in particular, a red phosphor capable of emitting long-wavelength red light having high emission characteristics and excellent thermal and chemical stability, a method for producing the red phosphor, and light emission using the red phosphor element package relating di及 beauty lighting device.

  As a method for producing a white LED element, there are a method of coating a blue LED with a yellow phosphor and a green phosphor, and a method of coating an ultraviolet LED with a red, green and blue phosphor.

  Since the red phosphor is less efficient than the green or blue phosphor, it must be mixed in a relatively large proportion (60 wt% or more). This is because the low efficiency of such a red phosphor has a relatively low excitation spectrum in the ultraviolet band or blue band compared to other phosphors. Therefore, development of a composition of a red phosphor has been required for white LEDs that use blue LEDs and ultraviolet LEDs as excitation sources to have high efficiency and improve color rendering properties. The present invention has been made to solve the above-described problems of the prior art, and its purpose is to emit red light using the blue and ultraviolet wavelength regions as excitation sources, have high brightness, and heat. An object of the present invention is to provide a red phosphor having chemical and chemical stability and a method for producing the same.

It is another object of the present invention, the light emitting device package及 beauty lighting device capable of emitting white light having excellent close color rendering properties to natural light includes a red phosphor that emits red light blue and ultraviolet wavelength regions as excitation sources Is to provide.

One embodiment according to the present invention includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu, where M is a metal element, and 0 <x <4, y = Ri 2x / 3 der, wherein M is a red fluorescent characterized that Mg, Ga, Ba, Li, Na, K, that it contains at least one element selected from the group consisting of Rb and Cs Provide the body.

In this case, the red phosphor may Rukoto that have a peak emission in a wavelength band of about 600nm~700nm blue or ultraviolet wavelength regions as excitation sources. Further, the above x may a full Tasco conditions 0.15 ≦ x ≦ 3.

A part of Si in the above SL composition formula, you substituted B, Al, Ga, I n , Ti, Zr, Gf, at least one element selected from a group consisting of Sn and Pb it is possible.

  The red phosphor may further include Mn, further include a mixture of crystal phases different from the inorganic compound, and the content of the inorganic compound may be 50% by mass or more. The crystal structure of the red phosphor is orthorhombic.

Meanwhile, in another embodiment, mixing a source material including at least one of a Sr-containing compound and an M-containing compound, an Eu-containing compound, a Si-containing oxide, and a Si-containing nitride, Calcining the above mixture to obtain an inorganic compound represented by the composition formula of (Sr, M) 2 SiO 4 -xN y : Eu, wherein M is Mg, Ga, Ba, A method for producing a red phosphor , comprising at least one element selected from the group consisting of Li, Na, K, Rb and Cs , wherein 0 <x <4 and y = 2x / 3 I will provide a.

In this case, the step of mixing the raw materials of the above SL may be further mixed manganese carbonate of the above, also the step of mixing the source material is, B, Al, Ga, I n, Ti, A compound of at least one element selected from the group consisting of Zr, Gf, Sn and Pb can be further mixed.

Meanwhile, still another embodiment includes a light emitting element that emits excitation light and a wavelength conversion unit that absorbs the excitation light and emits visible light, and the wavelength conversion unit includes (Sr, M ) 2 SiO 4-x N y : at least includes a red phosphor having an inorganic compound represented by a composition formula of Eu, Ri 0 <x <4, y = 2x / 3 der, wherein M is, Mg, Ga provides Ba, Li, Na, K, the light emitting device package, wherein Ru least one element der selected from the group consisting of Rb and Cs.

Further, the light emitting element is a blue light emitting diode may further include a green phosphor or yellow phosphor, the final output light of the light emitting device package you being a white light.

On the other hand, in yet another embodiment, a substrate, a plurality of light sources mounted on the substrate, and a diffusion that is disposed above the plurality of light sources and diffuses light incident from the light sources uniformly. The light source includes a light emitting element that emits excitation light, and a wavelength conversion unit that absorbs the excitation light and emits visible light. The wavelength conversion unit includes (Sr , M) 2 SiO 4-x N y: at least includes a red phosphor having an inorganic compound represented by a composition formula of Eu, Ri 0 <x <4, y = 2x / 3 der, wherein M is, Mg There is provided an illuminating device comprising at least one element selected from the group consisting of Ga, Ba, Li, Na, K, Rb and Cs .

By including an inorganic compound represented by the composition formula of (Sr, M) 2 SiO 4-x N y , it is possible to emit long-wavelength red light having high emission characteristics and excellent thermal and chemical stability. A red phosphor can be provided. Further, by using such a red phosphor, it is possible to provide a light emitting device package that has high output / high reliability and emits white light close to natural light using blue and ultraviolet wavelength bands as excitation sources. It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

2 is a diagram showing an analysis result of an emission spectrum of a phosphor of (Sr, M) 2 SiO 4−x N y according to Example 1. FIG. 4 is a diagram showing an analysis result of an XRD spectrum of a phosphor of (Sr, M) 2 SiO 4−x N y according to Example 1. FIG. 4 is a diagram showing the results of EDX component analysis of a phosphor of (Sr, M) 2 SiO 4 -xN y according to Example 1. FIG. Is a view showing an embodiment according to the 2 and 3 (Sr, M) 2 SiO 4-x N analysis of the emission spectrum of the y phosphor. Is a view showing an embodiment according to the 2 and 3 (Sr, M) 2 SiO 4-x N y phosphor results of EDX component analysis. Is a diagram showing the emission spectrum of Example 4 from by 6 (Sr, M) 2 SiO 4-x N y phosphor. It is a diagram showing an emission spectrum of by Examples 7 to 10 (Sr, M) 2 SiO 4-x N y phosphor. 6 is a diagram showing an emission spectrum of a (Sr, M) 2 SiO 4 -xN y phosphor according to Example 11. 1 is a side sectional view showing a light emitting device package according to a first embodiment; It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the sectional side view which showed the light emitting element by the 1st and 2nd Example. It is the top view which showed the light emitting element of the perpendicular | vertical horizontal structure by 3rd Example. It is sectional drawing which showed the light emitting element of the perpendicular | vertical horizontal structure by 3rd Example. It is sectional drawing which showed the light emitting element of the vertical-horizontal structure by the 4th Example. It is sectional drawing according to process for demonstrating the method to manufacture the light emitting element by a 5th Example and a 6th Example. It is sectional drawing according to process for demonstrating the method to manufacture the light emitting element by a 5th Example and a 6th Example. It is sectional drawing which showed schematically the light emitting element by a 7th Example. FIG. 35 is a schematic cross-sectional view showing a light emitting device package of a fourth embodiment using the light emitting device of the seventh example of FIG. 34. It is sectional drawing which showed schematically the light emitting element by an 8th Example. It is sectional drawing which showed schematically the light emitting element by a 9th Example. FIG. 9 is a cross-sectional view illustrating a structure of a light emitting device package according to a fifth embodiment embodied in a lamp shape. FIG. 10 is a cross-sectional view illustrating a structure of a light emitting device package according to a sixth embodiment embodied in a chip shape. 10 is a view illustrating a partial structure of a light emitting device package according to a seventh embodiment; 14 is a partial structure of a light emitting device package according to an eighth embodiment. FIG. 42 is a conceptual diagram schematically showing a light emitting device package according to an eighth embodiment shown in FIG. 41. It is a schematic diagram for demonstrating in more detail the operating principle of the light emitting element package by 8th Embodiment. It is the schematic diagram which showed roughly the energy transfer between the green fluorescent substance (2nd fluorescent substance) used for the light emitting element package of 8th Embodiment, and a red fluorescent substance (1st fluorescent substance). It is sectional drawing which showed the light emitting element package by 9th Embodiment. FIG. 46 is a schematic diagram for explaining a light extraction mechanism in the light emitting device package according to the ninth embodiment shown in FIG. 45; It is sectional drawing which showed the light emitting element package by 10th to 12th embodiment. It is sectional drawing which showed the light emitting element package by 10th to 12th embodiment. It is sectional drawing which showed the light emitting element package by 10th to 12th embodiment. It is sectional drawing which showed schematically the light emitting element package by 13th Embodiment. FIG. 52 is a perspective view schematically showing a wavelength conversion unit and a control unit in the light emitting device package shown in FIG. 50. It is sectional drawing for demonstrating the method to vary color temperature by the action | operation of the wavelength conversion part and control part which were shown by FIG. It is sectional drawing for demonstrating the method to vary color temperature by the action | operation of the wavelength conversion part and control part which were shown by FIG. It is the top view which showed roughly the arrangement structure of the light emitting module in the surface light source device by 1st Embodiment. 54 is a view showing a rotational arrangement method of the light emitting module in FIG. It is the top view which showed roughly the arrangement structure of the light emitting module in the surface light source device by 2nd Embodiment. It is the top view which showed roughly the arrangement structure of the light emitting module in the surface light source device by 3rd Embodiment. It is the top view which showed roughly the arrangement structure of the light emitting module in the surface light source device by 4th Embodiment. It is the top view which showed roughly the arrangement structure of the light emitting module in the surface light source device by 5th Embodiment. It is sectional drawing which showed the backlight unit of 1st Embodiment which employ | adopted the surface light source device by 1st-5th embodiment mentioned above. It is the perspective view which showed the surface light source device by 6th Embodiment. It is a schematic sectional drawing for demonstrating the surface light source device by 7th Embodiment. FIG. 63 is a schematic perspective view for explaining the flat light guide plate shown in FIG. 62. It is a disassembled perspective view of the backlight apparatus by 2nd Embodiment. FIG. 65 is a cross-sectional view taken along line II ′ after the backlight device shown in FIG. 64 is stacked. It is the top view which showed the LED backlight apparatus by 3rd Embodiment. FIG. 67 is a cross-sectional perspective view of the region A shown in FIG. 66 before the substrate is fastened. FIG. 67 is a cross-sectional perspective view of the A region shown in FIG. 66 after the substrate is fastened. FIG. 69 is a cross-sectional view taken along the cutting line II-II ′ of FIG. 68. It is the top view which showed schematically the backlight unit by 4th Embodiment. FIG. 71 is a perspective view showing combinations of LEDs mounted on the LED module shown in FIG. 70 according to examples. It is the graph which showed distribution of LED by a forward direction voltage. FIG. 71 is a plan view showing an example of various connection structures of LED modules and drive drivers of the backlight unit shown in FIG. FIG. 71 is a plan view showing an example of various connection structures of LED modules and drive drivers of the backlight unit shown in FIG. 1 is a schematic diagram illustrating an LED driving circuit according to various embodiments. 1 is a schematic diagram illustrating an LED driving circuit according to various embodiments. 1 is a schematic diagram illustrating an LED driving circuit according to various embodiments. 1 is a schematic diagram illustrating an LED driving circuit according to various embodiments. 1 is a schematic diagram illustrating an LED driving circuit according to various embodiments. It is a block diagram of a LED automatic illumination device. It is an operation | movement flowchart of the LED automatic illumination apparatus shown by FIG. It is a relationship graph of the external illumination intensity-detection voltage of the LED automatic illumination apparatus shown by FIG. FIG. 81 is a graph illustrating various external illuminance-detection voltage relationships according to sensitivity settings of the LED automatic illumination device illustrated in FIG. 80. It is the disassembled perspective view which showed the headlight for vehicles by one Embodiment. It is sectional drawing of the structure which assembled the headlight for vehicles shown by FIG. FIG. 85 is a diagram illustrating a light emitting device package relating to a structure in which a resin layer employed in the vehicle headlight illustrated in FIG. 84 includes a phosphor. (A) is the top view which showed the other Example, (b) is sectional drawing which showed the light emitting element package of Fig.87 (a), (c) and (d) are FIG. It is the top view which showed the modification of the state in which the light emitting element chip was mounted in the light emitting element package of (a). (A) is a plan view showing another embodiment of the light emitting device package shown in FIG. 86 (a), (b) is a sectional view showing the light emitting device package of FIG. 88 (a), (C) is sectional drawing which showed the modification of FIG.88 (b). (A) is the top view which showed the other Example of the light emitting element package shown by Fig.87 (a), (b) is sectional drawing which showed the light emitting element package of Fig.89 (a). (C) is sectional drawing which showed the modification of FIG.89 (b).

  Fluorescent substances are used as substances that convert specific wavelength light from various light sources into predetermined wavelength light. In particular, among various light sources, LEDs tend to be applied as backlights for liquid crystal displays, street lights, automobile lighting, and home lighting devices due to low power driving and excellent light efficiency. Has attracted attention as a core technology for producing white LEDs. In addition, the efficiency of the fluorescent material is an essential element for driving the display, and acts as a main variable directly related to the efficiency of the light source product including the display. Recently, a technology for realizing white light close to natural light defined in the CIE color tone table has been developed, and research on white LED elements for emitting such white light has been actively conducted.

The former case is the most widely studied method because its structure is simple and easy to manufacture, and high brightness white light can be obtained. In this case, a YAG (Y 3 Al 5 O 12 ) -based or TAG-based yellow phosphor is used as the yellow phosphor. However, since the light emission becomes bluish white due to insufficient red component, color rendering ) Is low, and the yellowing phenomenon occurs when the operating temperature increases after a long period of use. In the latter case, it is a method of making a three-wavelength white light by transmitting ultraviolet light through three primary color fluorescent materials, which alleviates the yellowing phenomenon, has an excellent color rendering index (CRI), and has a wide range of colors. There is an advantage that the distribution can be embodied.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified in various other forms, and the scope of the present invention is not limited to only the embodiments described below. Not all combinations of features described in the embodiments are essential for the solution of the invention.

The red phosphor according to an embodiment of the present invention is based on an inorganic crystal having a composition formula of (Sr, M) 2 SiO 4 -xN y and using Eu as an activator for generating a red energy level. Long-wavelength red light having an emission peak in the range of about 600 nm to 700 nm can be emitted. Here, strontium (Sr) is a main metal element constituting the base, and the metal element M that can replace strontium is at least one or more of monovalent and divalent elements. And since the brightness | luminance of luminescent color changes with the electronic state around the luminescent center element Eu, the light emission characteristic and physical characteristic of a red fluorescent substance can be changed by changing the composition of an inorganic crystal base material.

Such a red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4−x N y : Eu, where M is at least one metal element, and x is It can be seen that y must satisfy y = 2x / 3 because it is selected in a range satisfying the condition of 0 <x <4 and the total charge of Sr 2 SiO 4−x N y must be 0. . Preferably, for the purpose of obtaining high-intensity red light, x can satisfy 0.15 ≦ x ≦ 3, and when x is 0.15 or less, or 3 or more, predetermined luminance and light emission It is difficult to obtain red light having a peak.

  Here, M is at least one element selected from a group 1 element group composed of Li, Na, K, Rb, and Cs or a group 2 element group composed of Mg, Ca, Sr, and Ba. By including the emission peak of the red phosphor can be adjusted. In the above composition formula, a part of Si is at least one element selected from a group composed of B, Al, Ga and In or a group composed of Ti, Zr, Gf, Sn and Pb. The emission peak of the red phosphor can be adjusted by substitution, and the ratio of substitution of the Si to the element can be 1/10.

  That is, a crystal different from silicon oxide, silicon nitride, and oxynitride is used as a base material, and such a crystal is used as a base material, and a long wavelength red phosphor having an emission peak in a wavelength range of about 600 nm to 700 nm, for example. Can be obtained. Preferably, in the above composition formula, by replacing oxygen with nitrogen in an appropriate range, a high-intensity red phosphor having an emission peak in the wavelength range of about 600 nm to 650 nm, more preferably about 600 nm to 620 nm is obtained. be able to.

  In addition, red phosphors have high emission characteristics and superior thermal and chemical stability compared to oxide phosphors, which is due to the high covalent bonding of nitrogen compared to oxygen. Yes, it can have excellent thermal stability through a stiff crystal structure. Such a solid crystal structure of nitrogen can increase splitting of energy levels in the crystal of the lanthanum element and emit light having a wavelength longer than that of the oxide fluorescent material. That is, since the red phosphor has high light emission characteristics and excellent thermal and chemical stability, a high-power / high-reliability white light-emitting element package can be manufactured.

  On the other hand, the above-described red phosphor manufacturing method includes at least one of a Sr-containing compound and an M-containing compound as a raw material, an Eu-containing compound, a Si-containing oxide, and a Si-containing nitride. A raw material is prepared by weighing and mixing each raw material according to a predetermined stoichiometry. Mixing of the raw materials can be performed using either of two methods, dry and wet.

First, according to the wet mixing method, the above-described weighed mixture, a ball for assisting the mixing process and pulverization of the raw material, and a solvent are mixed and mixed. At this time, the ball is a silicon oxide (Si 3 N 4 ) or zirconia (ZrO 2 ) material, or a ball generally used when mixing raw materials. The solvent is D.I. I. Any of alcohols such as water and ethanol, or an organic solvent such as n-hexane can be used. That is, after putting a raw material, a solvent, and a ball, the container is sealed, and the raw material is mixed homogeneously for about 1 to 24 hours using an apparatus such as a mirror. After the mixing process is completed, the mixed raw materials and balls are separated, and the solvent is almost dried through a drying process of about 1 to 48 hours in an oven. The dried powder is uniformly dispensed to a size of 100 μm or less using a metal or polymer sieve.

  On the other hand, according to the dry mixing method, raw materials are put in a container without using a solvent, and the above raw materials are mixed homogeneously using a milling machine. The mixing time is about 1 to 24 hours. At this time, balls can be put together with the raw material to facilitate mixing and shorten the mixing time. Such a dry mixing method does not require a solvent drying process as compared with a wet method, and thus has an advantage that the entire process time can be reduced. When the mixing of the raw materials is completed, the powder after the mixing process is uniformly distributed to a size of 100 μm or less using a metal or polymer sieve as in the case of wet mixing.

  Finally, the dispensed mixed powder is filled in a boron nitride (BN) crucible and a firing process is performed. At this time, the baking step is performed at a temperature of 1000 to 1800 ° C. for about 1 to 24 hours using a heating furnace. As the atmosphere during the firing process, nitrogen (N2) 100% or mixed nitrogen gas containing 1 to 10% hydrogen is used. After the synthesized phosphor powder is induced or homogenized using a grinder, the brightness of the phosphor is improved by repeating the heat treatment step 1 to 3 times similar to the above-described synthesis step. be able to.

Through such a process, the final red phosphor containing the inorganic compound represented by the composition formula of (Sr, M) 2 SiO 4 -xN y is manufactured. Here, M is at least one monovalent and divalent element, and satisfies the condition of 0 <x <4 and y = 2x / 3.

  The finally fired phosphor powder is induced or pulverized using a pulverizer, and the particle size is controlled through a dispensing process in order to realize an optimum particle size. At this time, a red phosphor having a uniform size of 16 μm or less is typically obtained using a sieve having a size of 16 μm. The phosphor powder obtained here was obtained from D.I. I. By post-processing using water, an inorganic acid, an organic acid, or a base, impurities such as an excess glass phase and an unreacted metal substance contained in the phosphor can be removed. For example, excess impurities can be eluted and removed by adding nitric acid having a concentration of 0.1 to 60% and stirring for 1 to 10 hours. As the inorganic acid, in addition to nitric acid, sulfuric acid, hydrochloric acid, fluorine acid, or a mixed solution of these inorganic acids is used. On the other hand, impurities that could not be removed through acid treatment can be removed using a base. As the base, an inorganic base such as sodium hydroxide or potassium hydroxide or a mixed solution of these inorganic bases can be used. In the phosphor slurry after such acid treatment and salt treatment, the remaining acid or salt is treated with D.I. I. The phosphor powder is obtained by washing with water and wet dispensing, filtering, and drying. At this time, the drying is sufficiently performed at 50 to 150 ° C.

In one example, the Sr-containing compound can be SrCO 3 , the Eu-containing compound can be europium oxide (Eu 2 O 3 ), and the Si-containing oxide can be silicon oxide (SiO 2 ). The Si-containing nitride can be silicon nitride (Si 3 N 4 ). In this case, the red phosphor is an inorganic compound represented by a composition formula of Eu z Sr 2−z SiO 4−x N y by adding Eu 2 O 3 to the composition of SrCO 3 —SiO 2 —Si 3 N 4 . Get. At this time, z is selected from values satisfying the condition of 0.01 ≦ z ≦ 0.2. When the z value is 0.2 or more, the intensity of light emission decreases due to the concentration quenching phenomenon, and when the z value is 0.01 or less, the concentration of the activator acting as the luminescent center element is insufficient.

  Hereinafter, the present invention will be described in more detail through various embodiments.

In Example 1, SrCO 3 , SiO 2 , Eu 2 O 3 , and Si 3 N 4 as raw materials are mixed with an ethanol solvent using a ball mill at a stoichiometric ratio. Thereafter, the ethanol solvent of the raw material mixture is volatilized using a dryer, and the dried raw material mixture is filled in the boron nitride crucible. A boron nitride crucible filled with the raw material mixture was placed in a heating furnace and fired for 10 hours in a gas state of an N 2 atmosphere at 1600 ° C. to produce a phosphor of (Sr, M) 2 SiO 4−x N y : Eu. . At this time, the base crystal structure of the phosphor of (Sr, M) 2 SiO 4 -xN y : Eu is strontium silicate (Sr 2 SiO 4 ), and the composition of the matrix is changed by replacing strontium with the metal element M. Can be made. The emission spectrum, XRD spectrum, and EDX component analysis results of the phosphor (Sr, M) 2 SiO 4 -xN y : Eu produced in this way are shown in FIGS. 1, 2, and 3, respectively. The red phosphor exhibits a red emission characteristic (1) having an emission peak of 613 nm with a wavelength region of 200 nm or more and 500 nm or less as an excitation source, and the same orthorhombic system as a conventional strontium silicate (Sr 2 SiO 4 ) phosphor (Orthohombic) crystal structure. As a result of the EDX component analysis, it can be confirmed that oxygen atoms and nitrogen atoms are contained in a ratio of 44.91 At%: 04.58 At%, and that the oxygen atoms are partially substituted with nitrogen atoms. .

As Example 2 and Example 3, a phosphor of (Sr, M) 2 SiO 4 -xN y : Eu was produced in the same manner as in Example 1 except that the amount of nitrogen added was changed. did. Thus prepared (Sr, M) 2 SiO 4 -x N y: Eu to the fluorescent substance, FIG emission spectrum and the results of EDX component analysis was measured using an excitation light source of a wavelength region 200nm~500nm 4 and FIG. As can be seen from FIGS. 4 and 5, 2 is when the oxygen: nitrogen At% is 56.82: 4.58 (x = 0.43) (Example 2), and 3 is oxygen: nitrogen. FIG. 9 shows an emission spectrum in the case where At% is 42.91: 25 (x = 1.86) (Example 3), in which the value where oxygen is replaced by nitrogen is x = 0.43. The emission peak of Example 2 is 610 nm, and the emission peak of Example 3 in which the value at which oxygen is replaced with nitrogen is x = 1.86 is 620 nm. That, manufactured (Sr, M) 2 SiO 4 -x N y: Eu phosphor, it is seen that the added amount of nitrogen is the emission peak is further longer wavelength as increases.

As Example 4, Example 5 and Example 6, the same as Example 1 except that the addition amount (z) of europium was changed while increasing in increments of 0.01 from 0.04 to 0.06. (Sr, M) 2 SiO 4 -xN y : Eu phosphor was produced by the method described above. At this time, the red phosphor is represented by a composition formula of Eu z Sr 2 -z SiO 4 -xN y , and europium is substituted for strontium and acts as a luminescent center element. Thus prepared (Sr, M) 2-z SiO 4-x N y: Eu z phosphor respect, showing an emission spectrum measured by using a wavelength region 200nm~500nm as an excitation light source in FIG. As can be seen from FIG. 6, 4 is z = 0.04 (Example 4), 5 is z = 0.05 (Example 5), and 6 is z = 0.06 (Example 6). The emission peak of Example 4 is 610 nm, the emission peak of Example 5 is 612 nm, and the emission peak of Example 6 is 614 nm. That is, it can be seen that the red phosphor has a longer wavelength as the amount of europium added increases.

As Example 7 and Example 8, except that at least one of compounds containing divalent metal elements such as Ba and Ca was selected and further added, (Sr, M) 2 SiO 4-x N y: Eu was manufactured phosphor. As a result, Sr can be partially substituted with a divalent metal element of Ba and Ca, and the degree of substitution is such that the addition ratio of Sr: (Ba, Ca) is 9: 1.

FIG. 7A shows an emission spectrum of the (Sr, M) 2 SiO 4 -xN y : Eu phosphor manufactured as described above, measured using an excitation light source having a wavelength region of 200 nm to 500 nm or less. It was. As can be seen from FIG. 7A, when Sr is 100%, it has an emission peak at 613 nm in (1), and when Sr: Ba is added at 90%: 10%, respectively, it is 610 nm in (7). It has an emission peak, and it can be seen that when Si: Ca is added at 90%: 10% (8), it has an emission peak of 615 nm.

As Example 9 and Example 10, except that at least one of compounds containing trivalent metal elements such as Al and Ga was selected and further added (Sr, M ) 2 SiO 4-x Ny: Eu was manufactured phosphor. As a result, Si can be partially substituted with a trivalent metal element of Al and Ga, and the degree of substitution is set to a ratio of Si: (Al, Ga) of 9: 1.

FIG. 7B shows an emission spectrum of the (Sr, M) 2 SiO 4 -xN y : Eu phosphor manufactured as described above, measured using an excitation light source having a wavelength region of 200 nm to 500 nm or less. It was. As can be seen from FIG. 7 (b), when Si: Ga was added at 90%: 10%, respectively, (9) had an emission peak at 610 nm, and Si: Al was added at 90%: 10%. It can be seen that Case (10) has an emission peak of 615 nm.

  Accordingly, as can be seen from Examples 7 to 10, when Ca and Al, which are elements having a small atomic radius, are substituted around the europium element, the wavelength is increased, and Ba and Ga, which are elements having a large atomic radius, are replaced. It can be seen that the wavelength is shortened.

As Example 11, a (Sr, M) 2 SiO 4−x N y : Eu phosphor was produced in the same manner as in Example 1 except that manganese (Mn) was further added together with europium. At this time, the addition amount (z) of europium is fixed at 0.05, and the addition amount of Mn is 0.1. FIG. 8 shows an emission spectrum of the (Sr, M) 2 SiO 4−x N y : Eu phosphor thus manufactured, measured using an excitation light source having a wavelength band of 200 nm to 500 nm or less. As can be seen from FIG. 8, when 5 is the addition amount of europium at z = 0.05 and Mn is not added, 11 is when the addition amount of europium is z = 0.05, whereas Mn is When the addition amount is 0.1, each has an emission peak of 613 nm, but when Mn is added (11), the intensity of emission is improved from that when only europium is added (5). I understand that.

  Next, a light emitting device package, a surface light source device, and a lighting device using the red phosphor according to the first to eleventh embodiments will be described with reference to the following drawings.

  FIG. 9 is a side sectional view showing the light emitting device package of the first embodiment. As shown in FIG. 9, the light emitting device package 900 includes a package body 910, a lead frame 920 that is molded in the package body 910 and spaced apart from each other, a light emitting device 930 mounted on at least one lead frame, A bonding wire 940 that electrically connects the light emitting element 930 and the lead frame 920 and a resin packaging part 950 that seals the light emitting element 930 are included. In the light emitting device package 900, a reflective cup 970 having a groove so as to surround the light emitting device 930 may be formed on an upper portion of the package body with respect to the position of the lead frame. At this time, the reflective cup 970 is formed in an annular shape on the package body, the mounting area of the light emitting element 930 is defined by the groove portion of the reflective cup, and at least one lead frame is exposed to the bottom of the groove portion to provide the mounting area. . In addition, the side wall of the reflective cup may be formed of a reflective surface that is inclined to reflect light emitted from the light emitting device 930 in a predetermined direction. Here, the package body 910 may be formed integrally with the reflective cup 970.

  The light emitting element 930 can be bonded onto the lead frame 920 with an adhesive or the like, and current is input from an external power source through the bonding wire 940 to emit light having a predetermined wavelength. The light emitting device 930 can emit light having a wavelength of 200 nm to 500 nm, and can be, for example, a blue light emitting diode or an ultraviolet light emitting diode having a semiconductor stacked structure that emits blue light or ultraviolet light. Various embodiments of the semiconductor multilayer structure of the light emitting device will be described with reference to FIGS.

  And the resin packaging part 950 is filled so that the light emitting element 930, the bonding wire 940, and the lead frame 920 may be covered inside a reflective cup. In addition, the resin packaging unit 950 may include a phosphor 960 that emits light by converting the wavelength of light emitted from the light emitting element into another wavelength. The phosphor 960 may be used by mixing a red phosphor and at least one phosphor among green, blue, and yellow so as to emit white light. That is, the resin packaging unit 950 is used by appropriately mixing a phosphor mixture and a curable transparent resin such as an epoxy resin, a silicon resin, or a silicon-epoxy mixed resin.

Here, as a red phosphor for white light output, any one of the inorganic compounds represented by the composition formula of (Sr, M) 2 SiO 4 -x N y : Eu synthesized in Examples 1 to 11 is provided. The above-mentioned M is at least one monovalent or divalent element, and a nitride phosphor containing N satisfying 0 <x <4 and y = 2x / 3 can be used. Such nitride-based red phosphors are not only superior in reliability to the external environment such as heat and moisture but also less susceptible to discoloration than sulfide-based phosphors. In particular, the excitation efficiency of the phosphor is high at the main wavelength of the blue LED chip limited to a specific range (430 nm to 465 nm) in order to obtain high color reproducibility.

As the blue phosphor, either (Ba, Sr, Ca) 5 (PO 4 ) 3 Cl: (Eu 2+ , Mn 2+ ) or Y 2 O 3 : (Bi 3+ , Eu 2+ ) is selected. Can be used. The green phosphor may include any one of a silicate system, a sulfide system, and a nitride system. Examples of the silicate green phosphor include A 2 SiO 4 having a composition of 2,1,4, A 3 SiO 5 silicate having a composition of 3,1,5, or SrGa 2 S 4 : Sulfide having an Eu composition. Any one of a system or a nitride system having a Beta-SiAlON composition may be included. Here, A may be Sr, Ba, Ca, Mg, Sr is an essential component, and Ba, Ca, Mg may be selectively included as necessary (0 ≦ Ba, Ca, Mg ≦ 1). The nitride-based green phosphor includes a nitride or oxynitride crystal in which Eu is solid-solved among crystals having a β-type Si 3 N 4 crystal structure, and includes Si 6-z Al z O z N 8-z : Euy, Srx (0.009 <x <0.011, 0.018 <y <0.025, 0.23 <z <0.35) or Si 6-z Al z O z N 8- A phosphor represented by z (0.24 ≦ y ≦ 0.42, Eu content is 0.05 at% to 0.25 at%) can be included. As the yellow phosphor, a YAG or TAG series garnet phosphor, A 2 SiO 4 having a composition of 2,1,4, A 3 SiO 5 silicate having a composition of 3,1,5, or alpha Any one of the nitride systems having a SiAlON composition may be included (wherein A may be Sr, Ba, Ca, Mg, Sr is an essential component, and Ba, Ca, Mg are It may be selectively included as necessary (0 ≦ Ba, Ca, Mg ≦ 1)). The above nitride based phosphor, Ca X Si 12- (m + 2) Al (m + n) O n N 16-n: Ca-α- sialon phosphor represented by Eu y (0.01 <y <0 . 7,0.6 <m <3.0, 0 ≦ n <1.5) may be used.

  Hereinafter, various embodiments of the light emitting device according to the present invention will be described with reference to FIGS. 10 to 19.

  First, as shown in FIG. 10, the semiconductor multilayer structure of the light emitting device 100 according to the first embodiment may have the following structure. Si-Al alloy substrate 101 made of Si-Al alloy, protective layer 120 formed on the upper and lower surfaces of Si-Al alloy substrate 101, bonding metal layer 102, reflective metal layer 103, and p-type semiconductor layer on protective layer 120 104, the active layer 105, and the n-type semiconductor layer 106 are laminated | stacked in order. The p-type semiconductor layer 104, the n-type semiconductor layer 106, and the active layer 105 are GaN-based semiconductors, that is, AlxGayIn (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). ) It can be made of a semiconductor material or the like to form a light emitting structure.

  An n-side electrode 107 is formed on the n-type semiconductor layer 106. The reflective metal layer 103 interposed between the bonding metal layer 102 and the p-type semiconductor layer 104 further increases the luminance of the light emitting element by reflecting light incident from the semiconductor layer upward. The reflective metal layer 103 can be made of a highly reflective metal, for example, a metal selected from the group consisting of Au, Ag, Al, Rh, and two or more alloys thereof. However, such a reflective metal layer 103 may not be formed if necessary. The bonding metal layer 102 serves to bond the Si—Al alloy substrate 101 to the light emitting structure, and Au or the like may be used. Here, although the light emitting element 100 of this example includes the bonding metal layer 102, the Si—Al alloy substrate 101 may be directly bonded onto the p-type semiconductor layer 104 without the bonding metal layer 102. . Therefore, the light-emitting element 100 of this example uses the Si—Al alloy substrate 101 as a conductive substrate.

  Such a Si—Al alloy has advantages in terms of thermal expansion coefficient, thermal conductivity, mechanical workability, and cost. That is, the thermal expansion coefficient of the Si—Al alloy substrate 101 is similar to that of the sapphire substrate. Therefore, when the light emitting device 100 is manufactured using the Si—Al alloy substrate 101, the bending phenomenon of the substrate generated during the bonding process of the existing conductive substrate made of Si and the separation process of the sapphire substrate by laser irradiation, and light emission By greatly reducing the occurrence of cracks in the structure, a high-quality light-emitting element 100 with few defects can be obtained.

  Further, the thermal conductivity of the Si—Al alloy substrate 101 is about 120 to 180 W / m · K, which is excellent in heat release characteristics. In addition, the Si—Al alloy substrate 101 can be easily manufactured by melting Si and Al at high pressure, and the Si—Al alloy substrate can be easily obtained at low cost.

  In particular, in the light emitting device 100 of this embodiment, a protective layer 120 is further formed on the upper and lower surfaces of the Si—Al alloy substrate 101 to prevent chemical penetration during a cleaning process on the Si—Al alloy substrate 101. Here, the protective layer 120 may be made of a metal or a conductive dielectric. At this time, when the protective layer 120 is made of metal, at least one of Ni, Au, Cu, W, Cr, Mo, Pt, Ru, Rh, Ti, and Ta, or at least two of the metal group. It can be made of an alloy of In this case, the protective layer 120 may be formed by an electroless plating method, metal deposition, sputtering, CVD, or the like. At this time, the Si-Al alloy substrate 101 and the protective layer 120 made of a metal material are used. Further, a seed metal layer 110 serving as a seed in the plating process of the protective layer 120 may be further formed. The seed metal layer 110 can be made of Ti / Au or the like. When the protective layer 120 is made of a conductive dielectric, the conductive dielectric can be made of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), CIO (Copper Indium Oxide), or the like. In this case, the protective layer 120 may be formed by vapor deposition or sputtering. Such a protective layer 120 is preferably formed to a thickness of 0.01 μm to 20 μm, and is preferably formed to a thickness of 1 μm to 10 μm.

  Hereinafter, a method for manufacturing a light emitting device according to the first embodiment will be described in detail with reference to FIGS. 11 to 18 are process cross-sectional views sequentially shown to explain the method for manufacturing the light emitting device according to the first embodiment.

  First, as shown in FIG. 11, a sapphire substrate 150 is prepared as a growth substrate, and then, as shown in FIG. 12, the n-type semiconductor layer 106, the active layer 105, and the p-type are formed on the sapphire substrate 150. The semiconductor layer 104 is formed in order. Next, as shown in FIG. 13, a reflective metal layer 103 is formed on the p-type semiconductor layer 104 using a highly reflective metal material, such as Au, Al, Ag, or Rh. Here, the reflective metal layer 103 may not be formed if necessary. Thereafter, as shown in FIG. 14, a protective layer 120 is formed on the surface of the Si—Al alloy substrate 101. The protective layer 120 can be formed using a metal or a conductive dielectric.

  Here, when the protective layer 120 is formed of a metal, the protective layer 120 is any one of Ni, Au, Cu, W, Cr, Mo, Pt, Ru, Rh, Ti, and Ta. Or it can consist of at least 2 or more alloys among said metal group, and can form it by methods, such as electroless plating, metal vapor deposition, a sputter | spatter, or CVD. At this time, when the metal protective layer 120 is formed by electroless plating, the seed is formed in the protective layer 120 plating step before the protective layer 120 is formed on the surface of the Si-Al alloy substrate 101. A seed metal layer 110 serving as a role may be further formed.

  When the protective layer 120 is formed of a conductive dielectric, the protective layer 120 can be made of ITO, IZO, CIO, or the like, and can be formed by vapor deposition or sputtering. The protective layer 120 is preferably formed with a thickness of 0.01 μm or more and 20 μm or less, more preferably 1 μm or more and 10 μm or less over the entire surface of the Si—Al alloy substrate 101. When the thickness of the protective layer 120 is smaller than 0.01 μm, it is difficult for the protective layer 120 to reliably play a role of preventing chemical penetration of HCl, HF, KOH, etc., which will be described later, and is thicker than 20 μm. When formed, since the thermal expansion coefficient of the Si-Al alloy substrate 101 may change, the protective layer 120 is preferably formed with a thickness in the above-described range.

  At this time, although not shown in the drawings, after the protective layer 120 is formed, the surface of the protective layer 120 may be subjected to CMP (Chemical Mechanical Polishing) to flatten the surface and improve the illuminance. Good.

  As described above, after preparing the Si—Al alloy substrate 101 having the protective layer 120 formed on the surface, the bonding metal layer 102 is used to form the above-described reflective metal layer 103 on the reflection metal layer 103 as shown in FIG. The Si—Al alloy substrate 101 having the protective layer 120 formed on the surface is bonded. Here, as described above, the Si—Al alloy substrate 101 may be bonded using the bonding metal layer 102, but the protective layer 120 is formed on the surface without using the bonding metal layer 102. The formed Si—Al alloy substrate 101 may be directly bonded onto the reflective metal layer 103.

  Thereafter, as shown in FIG. 16, the sapphire substrate 150 is separated from the n-type semiconductor layer 106 by a laser lift-off (laser lift-off, LLO) process. After the separation of the sapphire substrate 150, a cleaning process using chemicals such as HCl, HF, and KOH can be performed.

  Next, as shown in FIG. 17, a plurality of n-side electrodes 107 are formed on the n-type semiconductor layer 106 exposed by the separation of the sapphire substrate 150. Here, before the n-side electrode 107 is formed, a texturing process using KOH or the like may be performed on the surface of the n-type semiconductor layer 106 in order to improve the light extraction efficiency of the device. Good.

  Next, as shown in FIG. 18, the n-type semiconductor layer 106, the active layer 105, the p-type semiconductor layer 104, the reflective metal layer 103, the bonding metal layer 102, and the protective layer 120 between the n-side electrodes 107. Then, the seed metal layer 110 and the Si—Al alloy substrate 101 are diced to be separated on a chip basis. As a result, the light emitting device 100 according to the first embodiment can be obtained.

  As described above, the light emitting device according to the first embodiment is cleaned after the sapphire substrate 150 is separated by further forming the protective layer 120 such as Ni on the surface of the Si—Al alloy substrate 101. The Al metal of the Si—Al alloy substrate 101 is etched by chemicals such as HCl, HF, and KOH used in the process, or KOH used in the surface texturing process of the n-type semiconductor layer 106. There is an effect that it can be prevented. Therefore, the light emitting device according to the first embodiment prevents the surface of the Si—Al alloy substrate 101 from being uneven, and the light emitting structure bonded onto the Si—Al alloy substrate 101 is removed. This has the effect of preventing the occurrence of defects.

  Further, when a metal such as Ni is used as the protective layer 120, the surface of the Si—Al alloy substrate 101 is flattened to firmly join the Si—Al alloy substrate 101 and the light emitting structure. There is an advantage that you can. In other words, conventionally, the Si—Al alloy substrate 101 is subjected to a cleaning process using a chemical substance such as an acid for removing a natural oxide film before the bonding metal layer 102 is formed. Surface roughness of 200 nm to 500 nm on average was formed while the Al metal on the surface of the Al alloy substrate 101 was etched. However, as in the first example, Ni as the protective layer 120 was formed on the surface of the Si—Al alloy substrate 101. After forming a metal such as Ni CMP (Chemical Mechanical Polishing), the surface unevenness is reduced to 5 nm or less, and the surface can be flattened like a mirror surface.

  As described above, since the surface of the Si—Al alloy substrate 101 is flattened, there is an effect that the bonding between the Si—Al alloy substrate and the light emitting structure can be solidified and the bonding yield can be improved. .

  Next, as shown in FIG. 19, the light emitting device 100 has the same configuration as the light emitting device according to the first embodiment, except that the protective layer 120 is made of Si. The protective layer 120 and the protective layer are formed so that a part of the Si—Al alloy substrate 101 is exposed on the upper surface of the Si—Al alloy substrate 101 without being formed on the entire upper and lower surfaces of the Al alloy substrate 101. The first embodiment is that a conductive layer 122 is further formed on the upper surface of the Si—Al alloy substrate 101 exposed by the above step, and a contact metal layer 123 is formed on the lower surface of the Si—Al alloy substrate 101. It is a different point. In particular, the protective layer 120 is preferably made of an insulating material that is not a metal or a conductive dielectric. That is, in the light emitting device according to the second embodiment, the protective layer 120 is protected from the Si—Al alloy substrate 101 on which the protective layer 120 is formed instead of the metal or the insulating material that is not a conductive dielectric. For the purpose of energizing the light emitting structure above the layer 120, the protective layer 120 is formed so as to expose a part of the upper surface of the Si-Al alloy substrate 101, and includes the protective layer 120. A conductive layer 122 is further formed on the upper surface of the Si—Al alloy substrate 101. Here, the conductive layer 122 may be made of metal or the like.

  Hereinafter, the manufacturing method of the compound semiconductor light emitting device according to the second embodiment will be described in detail. However, in the configuration of the second embodiment, the description of the same part as that of the first embodiment is omitted, and only the configuration that is different from the second embodiment will be described in detail.

  First, as shown in FIGS. 11 to 13 described above, an n-type semiconductor layer 106, an active layer 105, a p-type semiconductor layer 104, and a reflective metal layer 103 are sequentially formed on a sapphire substrate 150. . Here, the reflective metal layer 103 may not be formed if necessary.

  Thereafter, as shown in FIG. 20, the protective layer 120 is formed on the entire surface of the Si—Al alloy substrate 101. Here, the protective layer 120 may be made of an insulating material. The protective layer 120 made of the insulating material can be formed with a thickness of 0.01 μm or more and 1 μm or less by CVD or a coating method. At this time, although not shown in the drawing, the surface of the protective layer 120 may be subjected to CMP (Chemical Mechanical Polishing) after the protective layer 120 is formed.

  Next, as shown in FIG. 21, a part of the protective layer 120 is removed by an etching method or the like, and a part of the upper surface of the Si—Al alloy substrate 101 is exposed. Thereafter, as shown in FIG. 22, a conductive layer 122 is formed on the upper surface of the Si—Al alloy substrate 101 including the protective layer 120. Then, as shown in FIG. 23, the conductive layer 122 formed on the upper surface of the Si—Al alloy substrate 101 is bonded onto the reflective metal layer 103 using the bonding metal layer 102.

  Thereafter, as shown in FIG. 24, the sapphire substrate 150 is separated from the n-type semiconductor layer 106 by a laser lift-off process. Here, after the sapphire substrate 150 is separated, a cleaning process using chemicals such as HCl, HF, and KOH may be performed. At this time, the light emitting device according to the second embodiment is used in the cleaning step because the protective layer 120 and the conductive layer 122 are formed on the surface of the Si-Al alloy substrate 101. It is possible to prevent the Al metal of the Si—Al alloy substrate 101 from being etched by the chemical.

  Thereafter, as shown in FIG. 25, a plurality of n-side electrodes 107 are formed on the n-type semiconductor layer 106 exposed by the separation of the sapphire substrate 150. Here, before the n-side electrode 107 is formed, a texturing process using KOH or the like may be performed on the surface of the n-type semiconductor layer 106 for the purpose of improving the light extraction efficiency of the element. Good. At this time, according to the present example, since the protective layer 120 and the conductive layer 122 are formed on the surface of the Si-Al alloy substrate 101, the Si— It is possible to prevent the Al metal of the Al alloy substrate 101 from being etched.

  Next, as shown in FIG. 26, a lapping process is performed to remove the lower surface of the Si-Al alloy substrate 101 including the protective layer 120 by a certain thickness. After that, as shown in FIG. 27, a contact metal layer 123 is formed on the lower surface of the Si—Al alloy substrate 101 exposed by the lapping process.

  Thereafter, as shown in FIG. 28, the n-type semiconductor layer 106, the active layer 105, the p-type semiconductor layer 104, the reflective metal layer 103, the bonding metal layer 102, the conductive layer 122, and the protection between the n-side electrodes 107 described above. The layer 120, the Si—Al alloy substrate 101, and the contact metal layer 123 are diced and separated in units of chips. As a result, the light emitting device 100 according to the second embodiment can be obtained.

  On the other hand, this embodiment may be a vertical and horizontal light emitting device capable of high current operation by changing the electrode arrangement structure, unlike the vertical light emitting devices of the first and second embodiments. . 29 and 30 are a plan view and a cross-sectional view showing a light emitting device having a vertical and horizontal structure according to the third embodiment. At this time, FIG. 30 is a cross-sectional view taken along the line II ′ of FIG.

  Referring to FIGS. 29 and 30, the light emitting device 200 according to the third embodiment includes a conductive substrate 210, a first electrode layer 220, an insulating layer 230, a second electrode layer 240, a second semiconductor layer 250, The active layer 260 and the first semiconductor layer 270 are included, and the above-described layers are sequentially stacked.

  The conductive substrate 210 may be made of a material that can flow electricity. For example, the conductive substrate 210 is a metallic substrate including any one of Au, Ni, Cu, and W, or a semiconductor substrate including any one of Si, Ge, and GaAs. Is preferred. The first electrode layer 220 is stacked on the conductive substrate 210, and the first electrode layer 220 is electrically connected to the conductive substrate 210 and the active layer 260. Therefore, it is preferable that the contact resistance between the conductive substrate 210 and the active layer 260 is made of a material that can be minimized.

  The first electrode layer 220 is provided by being stacked on the conductive substrate 210. In addition, as shown in FIG. 30, a part of the first electrode layer 220 includes the insulating layer 230 and the second layer. The electrode layer 240, the second semiconductor layer 250, and the active layer 260 are extended through a contact hole 280 penetrating to a certain region of the first semiconductor layer 270 to be in contact with the first semiconductor layer 270. The conductive substrate 210 and the first semiconductor layer 270 are electrically connected to each other. That is, the first electrode layer 220 electrically connects the conductive substrate 210 and the first semiconductor layer 270, but electrically connects through the contact hole 280, so that the contact hole 280 is electrically connected. More precisely, through the contact hole 280, the first electrode layer 220 and the first semiconductor layer 270 are electrically connected through a contact region 290, which is an area in contact.

  On the other hand, on the first electrode layer 220, the insulating layer for electrically insulating the first electrode layer 220 from other layers except the conductive substrate 210 and the first semiconductor layer 270. 230 is provided. That is, the insulating layer 230 is not only between the first electrode layer 220 and the second electrode layer 240, but also the second electrode layer 240, the second semiconductor layer 250, and the like exposed through the contact hole 280. It is also provided between the side surface of the active layer 260 and the first electrode layer 220 described above. In addition, it is preferable that the insulating layer 230 is provided on the side surface of a certain region of the first semiconductor layer 270 through which the contact hole 280 penetrates to insulate.

  The second electrode layer 240 is provided on the insulating layer 230. Of course, as described above, the second electrode layer 240 does not exist in a certain region through which the contact hole 280 penetrates. At this time, as shown in FIG. 30, the second electrode layer 240 includes at least one exposed region 245, that is, a region where a part of the interface contacting the second semiconductor layer 250 is exposed. Yes. An electrode pad portion 247 for connecting an external power source to the second electrode layer 240 may be provided on the exposed region 245. On the other hand, the second semiconductor layer 250, the active layer 260, and the first semiconductor layer 270 described later are not provided on the exposed region 245. In addition, as shown in FIG. 29, the exposed region 245 is preferably formed at the corner of the semiconductor light emitting device 200, in order to maximize the light emitting area of the semiconductor light emitting device 200. is there. On the other hand, the second electrode layer 240 preferably includes any one of Ag, Al, and Pt. The second electrode layer 240 is preferably the second semiconductor layer 250. In order to be in electrical contact with the second semiconductor layer 250, the contact resistance of the second semiconductor layer 250 is minimized, and the light generated by the active layer 260 is reflected and directed to the outside to improve the luminous efficiency. This is because it is preferably provided by a layer having a function of enhancing.

  The second semiconductor layer 250 is provided on the second electrode layer 240, the active layer 260 is provided on the second semiconductor layer 250, and the first semiconductor layer 270 is the active layer. 260 is provided. At this time, the first semiconductor layer 270 is preferably an n-type nitride semiconductor, and the second semiconductor layer 250 is preferably a p-type nitride semiconductor. Meanwhile, the active layer 260 may be formed by selecting another material depending on the material forming the first semiconductor layer 270 and the second semiconductor layer 250. That is, the active layer 260 is a layer that emits energy by recombination of electrons / holes into light, and thus is more than the energy band gap of the first semiconductor layer 270 and the second semiconductor layer 250. It is preferable to form with a material having a small energy band gap.

  On the other hand, the light emitting device of the fourth embodiment may be modified with the same structure as the light emitting device of the third embodiment, and the first electrode layer connected to the contact hole may be exposed to the outside.

  FIG. 31 is a cross-sectional view showing a light emitting device according to the fourth embodiment. In the light emitting device 300 according to the fourth embodiment, the second semiconductor layer 350, the active layer 360, and the first semiconductor layer 370 are formed on the conductive substrate 310. In this case, the second electrode layer 340 may be disposed between the second semiconductor layer 350 and the conductive substrate 310. Unlike the above-described embodiment, the second electrode layer 340 may be omitted. In the present embodiment, the contact hole 380 having the contact region 390 that is in contact with the first semiconductor layer 370 is connected to the first electrode layer 320, and the first electrode layer 320 is exposed to the outside and has the electrical connection part 345. . An electrode pad part 347 may be formed on the electrical connection part 345. The first electrode layer 320 can be electrically separated from the active layer 360, the second semiconductor layer 350, the second electrode layer 340, and the conductive substrate 310 by the insulating layer 330. In the third embodiment described above, the contact hole is connected to the conductive substrate. In the fourth embodiment, the contact hole 380 is electrically separated from the conductive substrate 310, and the contact hole 380 The connected first electrode layer 320 is exposed to the outside. Accordingly, the conductive substrate 310 is electrically connected to the second semiconductor layer 350, and the polarity is different from that of the above-described third embodiment.

  Therefore, in the light emitting device having such a vertical and horizontal structure, the first electrode is partially formed on the light emitting surface, and the remaining part is disposed below the active layer, thereby ensuring the maximum light emitting area. By arranging the electrodes arranged on the light emitting surface uniformly, even if a high operating current is applied, the current can be distributed uniformly, and the phenomenon of current concentration during high current operation can be alleviated.

On the other hand, the wavelength conversion portion may be formed by uniformly covering the outer surface of the light emitting device according to any one of the first to fourth embodiments described above with a resin material containing a phosphor. A light-emitting element covered with a resin material can be a chip-coated light-emitting element. Here, the phosphor contained in the resin material includes a phosphor capable of converting light generated by the light emitting element into white light. As the phosphor, a part or all of the red phosphors 1 to 11 of the embodiments relating to the blue phosphor, the green phosphor, and the red phosphor as described above can be used. Specifically, it may be one or more of fluorescent substances that are wavelength conversion means among YAG, TAG, and Silicate. The red phosphor comprises an inorganic compound represented by the composition formula (Sr, M) 2 SiO 4 -xN y : Eu of Examples 1 to 11 relating to the red phosphor, and the above M is at least A phosphor that is one monovalent and divalent element, and 0 <x <4 and y = 2x / 3 can be used.

  32 and 33 are cross-sectional views illustrating processes for manufacturing a light emitting device according to the fifth embodiment and the sixth embodiment.

  32, the upper surface of the light emitting device 410 includes a bonding pad 402 that is electrically connected to the bonding wire 425. The bonding pad 402 may be a horizontal or vertical chip die 401. Depending on the structure, one or two can be provided. That is, the number of the bonding pads 402 is changed depending on the structure of the chip die 401, but the chip die 401 has a vertical structure in which the P-pole and the N-pole are formed on the upper and lower surfaces, respectively. When provided as a vertical horizontal structure, the bonding pad 402 is provided independently so as to be electrically connected to the P-pole formed on the upper surface of the chip die 401.

  In addition, when the chip die 401 is provided as a horizontal structure or a vertical horizontal structure in which both the P pole and the N pole are formed on the upper surface, the bonding pad 402 is formed on the upper surface of the chip die 401. Two must be provided to be electrically connected to the pole and the N pole, respectively. In addition, the wavelength conversion unit 403 includes a phosphor mixed with a transparent resin material such as epoxy, silicon, and resin so as to uniformly cover the outer surface of the chip die 401 die-attached on the submount 404. Do it. At this time, the wavelength conversion unit 403 may be formed by printing a transparent resin such as silicon, epoxy, or the like mixed with a phosphor to a predetermined thickness so as to cover the entire chip die 401. The transparent resin may be a thermosetting resin or a UV curable resin that is cured by artificially provided heat or UV light.

Here, the wavelength conversion unit 403 includes a phosphor capable of converting light generated by the chip die into white light. As the phosphor, a part or all of the red phosphors 1 to 11 of the embodiments relating to the blue phosphor, the green phosphor, and the red phosphor as described above can be used. Specifically, it may be one or more of fluorescent substances that are wavelength conversion means among YAG, TAG, and Silicate. The red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized in Examples 1 to 11, and the above M is at least one 1 A phosphor that is a valence element and a divalent element, and 0 <x <4 and y = 2x / 3 can be used. The lead frame 420 is electrically connected to at least one bonding pad 402 exposed to the outside through the upper surface of the wavelength conversion unit 403 through a bonding wire 425.

  Next, referring to FIG. 33, in the light emitting device according to the sixth embodiment, the wavelength conversion unit 403 ′ is formed only on the upper surface of the chip die 401 ′.

Accordingly, as shown in FIG. 32G, the light emitting device package according to the second embodiment is integrally provided in a package body (not shown) that is a resin structure that is injection molded as a resin material. The bonding pad 402 and one end of the light emitting device 410 of the fifth embodiment may be wire-bonded, and the lead frame 421 and the other end may be provided by the bonding wire 425 that is wire-bonded. In addition, as shown in FIG. 33 (f), the light emitting device package according to the third embodiment of the present invention has a light emitting device 410 ′ of the sixth example in the upper part of a lead frame 421 having a cathode lead and an anode lead. The lead frame 421 mounted on the surface is provided integrally with a package body (not shown) that is injection-molded into a resin material so as to form a cavity opened at the top, and is externally provided through the cavity of the package body. The light emitting device 410 ′ exposed to the electrode is electrically connected to the lead frame 421 through a bonding wire 425 having one end bonded to the bonding pad 402 ′ to form a light emitting device package. The wavelength conversion unit 403 ′ includes a fluorescent material that is one of wavelength conversion means of YAG, TAG, and Silicate that can convert the light generated by the chip die into white light. The red phosphor comprises an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized in Examples 1 to 11, and the above M is at least one monovalent compound. And a phosphor that is a divalent element and 0 <x <4 and y = 2x / 3 can be used.

  As described above, when a light emitting device having a vertical structure or a vertical horizontal structure is used in a light emitting device package for high output, the phosphor layer is in direct contact with the light emitting surface of the light emitting device having the vertical structure or the vertical horizontal structure. The heat generated from the light emitting element is easily transferred to the phosphor. Nitride-based red phosphors are not only chemically stable and superior in reliability to the external environment such as heat and moisture than conventional sulfide-based phosphors, but also the light emitted by phosphors due to temperature rise. The change in wavelength is small, and the change in emission color is also small. Therefore, the red phosphor can directly form the wavelength conversion part on the light emitting surface of the light emitting element, and can produce a white light emitting element package with high output / high reliability.

  FIG. 34 is a cross-sectional view schematically showing a light emitting device according to the seventh embodiment. Referring to FIG. 34, the light emitting device 500 according to the seventh embodiment is formed so as to cover the light emitting diode chip 501 and its surface, and converts the wavelength of the light emitted from the light emitting diode chip 501. It is configured with. The wavelength conversion part 502 can be employed in a structure in which the phosphor P is dispersed in the transparent resin part. The light converted by the wavelength conversion unit 502 and the light emitted from the light emitting diode chip 501 are mixed, and the light emitting device 500 can emit white light. The light-emitting diode chip 501 may have a structure in which an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer are stacked. First and second electrodes 503a and 503b are formed on one surface.

  As shown in FIG. 34, the wavelength conversion unit 502 uses the surface on which the first and second electrodes 503a and 503b are formed in the light emitting diode chip 501 as the first surface, and the surface facing this as the second surface, When a surface positioned between the first and second surfaces is defined as a side surface, the light emitting diode chip 501 can be formed to cover the first surface (electrode forming surface) and the side surface. This intends that the light of the light emitting diode chip 501 is emitted in the upper direction and the side direction with reference to FIG. In the case of the seventh embodiment, the wavelength conversion unit 502 is provided in a shape that is thinly coated along the surface of the light emitting diode chip 501, and is generally uniform as compared with the method in which the phosphor is injected into the cup of the package body. Light can be obtained. In addition, the wavelength converter 502 can be applied to the surface of the light emitting diode chip 501 as it is, so that the size of the device can be reduced because the package body is not separately provided.

  As a structure for electrically connecting the light emitting diode chip 501, in the present embodiment, first and second electrical connection portions 504 a and 504 b including plating layers are used instead of the lead frame. Specifically, first and second electrical connection portions 504a and 504b are formed to be connected to the first and second electrodes 503a and 503b, and the first and second electrical connection portions 504a and 504b have plating layers, respectively. Prepare. The first and second electrical connection units 504a and 504b are exposed to the outside through the wavelength conversion unit 502, and are provided as regions for wire bonding and the like. As described above, the light emitting device 500 has a simplified structure as compared with a conventional normal package, and can be used in various light emitting devices such as a COB (Chip On Board) and a package form.

  FIG. 35 is a schematic cross-sectional view showing the light emitting device package of the fourth embodiment using the light emitting device of the seventh example of FIG. The light emitting device package of the fourth embodiment of FIG. 35 can be implemented by mounting the light emitting device of the seventh example described above on a substrate 505. In this case, in FIG. 35, the drawing number indicating the light emitting element is omitted. As the substrate 505, a circuit substrate in which a circuit pattern is formed on an insulating base material can be used, and a wire W is formed so as to connect the light emitting element and the circuit pattern described above. As described above, since the light emitting element emits light through the first surface and the side surface, the mounting direction of the light emitting element is a direction in which the second surface of the light emitting diode chip faces the substrate 505. Although not shown separately other than the method in which the light emitting element is mounted on the substrate 505, the light emitting element is mounted on a lead frame and can be used for a normal package. When the light emitting device is packaged and used in this way, it is not necessary to separately inject a phosphor into the cup of the package body, and a uniform color temperature can be obtained in the entire light emission direction.

  36 and 37 are cross-sectional views schematically showing light emitting devices according to the eighth and ninth embodiments, respectively. First, referring to FIG. 36, a light emitting device 600 includes a light emitting diode chip 601 having a first electrode 603a and a second electrode 603b, a wavelength converter 602, a first electrical connection and a second electrical connection, as in the seventh embodiment. It is provided with the parts 604a and 604b. The difference from the structure shown in FIG. 34 is that the resin portion 607 formed on the side surface of the light emitting diode chip 601 is made of a transparent resin excluding the phosphor. This is because the light emitted to the side surface of the light emitting diode chip 601 is lower in intensity than the light emitted to the first surface.

  Next, the light emitting device 700 shown in FIG. 37 includes a light emitting diode chip 701 having first and second electrodes 703a and 703b, a wavelength conversion unit 702, and first and second electrical connections as in the seventh embodiment. It is provided with the parts 704a and 704b. 34 is different from the structure shown in FIG. 34 in that an underfill resin portion 706 formed on a region surrounding the side surfaces of the first and second electrodes 703a and 703b located on the first surface of the light emitting diode chip 701 is fluorescent. That is, the body is made of a transparent resin that is excluded.

  On the other hand, referring to FIGS. 38 to 41, the structure of a wavelength conversion unit in which phosphor layers are laminated in a multilayer on a UV light emitting diode chip or a blue light emitting diode chip will be described through various embodiments.

  First, FIGS. 38 and 39 are cross-sectional views illustrating structures of light emitting device packages according to the second and third embodiments of the present invention, which are embodied in a lamp shape and a chip shape, respectively.

  As shown in FIG. 38, the light emitting device package according to the fifth embodiment of the present invention embodied in a lamp shape has UV light emitting diode chips 810 having wavelengths of about 410 nm or less, which are excited by ultraviolet rays and have different hues. Can be covered with a multilayer fluorescent layer 820 including first, second, and third fluorescent layers 821, 822, and 823 containing three types of phosphors that emit light.

  As shown in FIG. 39, in the light emitting device package according to the sixth embodiment of the present invention embodied in a chip shape, the UV light emitting diode chip 1010 is provided on the substrate 1005 in the groove of the casing 1006. First, second and third fluorescent layers 1021, 1022, and 1023 containing three kinds of fluorescent materials are formed in the groove of the casing 1006, and these cover the UV light emitting diode chip 1010. A multilayer fluorescent layer 1020 is formed. The n electrode and the p electrode of the UV light emitting diode chip 1010 are electrically connected to a metal conductor 1007 formed on the substrate 1005 by a wire 1003.

Specifically, the first fluorescent layer may be formed on a UV light emitting diode chip and may be a mixture of a phosphor that emits red light R and a resin. The phosphor that emits the red light R is a phosphor that is excited by ultraviolet rays and emits light having an emission peak in the range of about 600 nm to 700 nm, that is, synthesized by Examples 1 to 11 (Sr). , M) 2 SiO 4−x N y : an inorganic compound represented by a composition formula of Eu, where M is at least one monovalent and divalent element, and 0 <x <4, y = A phosphor that is 2x / 3 is used.

  The second fluorescent layer may be formed by mixing a phosphor that emits green light G and a resin that are stacked on the first fluorescent layer. As the phosphor that emits green light, a fluorescent substance that is excited by ultraviolet rays and emits light having a wavelength in the range of 500 nm to 550 nm can be used. The third fluorescent layer may be laminated on the second fluorescent layer, and may be a mixture of a phosphor that emits blue light B and a resin. As the phosphor that emits blue light, a fluorescent material that is excited by ultraviolet rays and emits light having a wavelength in the range of 420 nm to 480 nm can be used.

  The ultraviolet rays emitted from the UV light emitting diode chip through the above-described configuration excite different types of phosphors contained in the first, second and third fluorescent layers. As a result, red light R, green light G, and blue light B are emitted from the first, second, and third fluorescent layers, respectively, and light of these three hues is combined to form white light W. Become.

  In particular, the fluorescent layer for fluorescent conversion of ultraviolet rays is formed in multiple layers, that is, three layers, but the first fluorescent layer that emits the light having the longest wavelength, that is, red light R, is formed on the UV light emitting diode chip first. The second and third fluorescent layers that emit light having shorter wavelengths, that is, green light G and blue light B, are sequentially stacked thereon. Since the first fluorescent layer containing the phosphor that emits the red light R having the lowest light conversion efficiency is positioned closest to the UV light-emitting diode chip, the light conversion efficiency in the first fluorescent layer is relatively high. As a result, the overall light conversion efficiency of the light emitting diode chip can be improved.

  40 and 41 show a partial structure of the light emitting device package according to the seventh and eighth embodiments of the present invention. In this drawing, only the structure of the light emitting diode chip and the multilayer fluorescent layer is shown, and the configuration of the other parts is the same as in FIGS. 38 and 39. That is, the light emitting device package according to the seventh and eighth embodiments of the present invention may be implemented in a lamp shape or a chip shape.

The light emitting device package according to the seventh embodiment shown in FIG. 40 includes a multilayer fluorescent layer 1120 formed to cover a UV light emitting diode chip 1110 having a wavelength of 410 nm or less. In this case, the multilayer fluorescent layer described above is used. 1120 is composed of two fluorescent layers. Specifically, the first fluorescent layer 1121 formed on the UV light emitting diode chip 1110 is formed by mixing a phosphor that emits red light R and a resin. At this time, the phosphor that emits the red light R is a phosphor that is excited by ultraviolet rays and emits light having an emission peak in the range of about 600 nm to 700 nm, that is, synthesized by Examples 1 to 11. (Sr, M) 2 SiO 4 -xN y : an inorganic compound represented by a composition formula of Eu, wherein M is at least one monovalent and divalent element, and 0 <x <4 , Y = 2x / 3 phosphor is used. The second fluorescent layer 1122 stacked on the first fluorescent layer 1121 is formed by mixing a phosphor that emits green light G and a phosphor that emits blue light B into the resin.

  With such a configuration, the ultraviolet light emitted from the UV light emitting diode chip excites the phosphor contained in the first fluorescent layer 1121 to emit red light R, and is mixed into the second fluorescent layer 1122. The two types of phosphors thus excited are excited to emit green light G and blue light B. By combining light of these three hues, it becomes visible as white light W to the human eye. As described above, two fluorescent layers for fluorescence conversion of ultraviolet rays are formed. The first fluorescent layer 1121 that emits red light R having the longest wavelength is first laminated on the UV light emitting diode chip 1110. On top of this, a second fluorescent layer 1122 that emits both green light G and blue light B of shorter wavelengths is laminated. Even with such a multilayer structure of multilayer fluorescent layers, the effect of increasing the light conversion efficiency can be obtained as in the above-described embodiment.

The light emitting device package according to the eighth embodiment shown in FIG. 41 has a multilayer phosphor layer 1220 formed to cover a light emitting diode chip 1210 that emits blue light B having a wavelength in the range of 420 nm to 480 nm as excitation light. In this case, the first fluorescent layer 1221 formed on the light emitting diode chip 1210 is a mixture of a phosphor that emits red light R and a resin. At this time, the phosphor that emits the red light R is a fluorescent material that is excited by blue light and emits light having an emission peak in the range of about 600 nm to 700 nm, that is, according to Examples 1 to 11. It comprises an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu, where M is at least one monovalent or divalent element, and 0 <x < 4. Use phosphor with y = 2x / 3. The second fluorescent layer 1222 stacked on the first fluorescent layer 1221 is formed by mixing a phosphor that emits green light G or yellow light Y into a resin.

  With such a configuration, the blue light B emitted from the light emitting diode chip excites the phosphor contained in the first fluorescent layer to emit red light R, and is contained in the second fluorescent layer. The green phosphor is excited to emit green light G or yellow light Y. Thus, the white light W is formed by combining the red light R, green light G (or yellow light Y) emitted from the multilayer fluorescent layer, and the blue light B generated in the light emitting diode chip.

  Here, the white light emission principle of the light emitting device package according to the eighth embodiment of the present invention disclosed in FIG. 41 will be described in more detail.

  FIG. 42 is a conceptual view schematically showing a light emitting device package according to the eighth embodiment of the present invention shown in FIG. Referring to FIG. 42, blue light is emitted from a blue light source. The blue light source has a peak emission wavelength of 420 nm to 480 nm. In particular, as the blue light source, a blue LED having a peak emission wavelength of 420 nm to 480 nm can be used. The green and red phosphors are excited by the blue light emitted from the blue light source and emit green and red visible light, respectively. The emitted green and red visible rays are mixed with the blue light transmitted through the phosphor (emitted light of the blue light source), and output white light.

The green phosphor has a peak emission wavelength of 490 nm to 550 nm, the red phosphor is excited by blue light and emits light having an emission peak in the range of about 600 nm to 700 nm, i.e. And an inorganic compound represented by the composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, wherein M is at least one monovalent and divalent compound The phosphor is 0 <x <4 and y = 2x / 3. Preferably, the phosphor has a high photon efficiency at a specific emission wavelength of a blue light source. Further, preferably, each phosphor has a substantial translucency with respect to visible light emitted by other phosphors. The red phosphor is excited by blue light emitted from a blue light source, and is also excited by the emitted light (green light) of the green phosphor to emit red light. Preferably, the red phosphor has a peak excitation wavelength in the range of 420 nm to 500 nm so that it can be excited sufficiently efficiently by blue light and green light. Further, since the red phosphor is excited not only by the blue light source but also by the green phosphor (that is, the red phosphor is double-excited), the quantum yield of the red phosphor is improved. By improving the quantum yield of such a red phosphor, overall luminous efficiency, luminance, and color rendering index are also improved. Furthermore, if green light that has been wasted in the past (for example, green emission light that exits behind the emission surface) is used to excite the red phosphor, the overall luminous efficiency is further increased. Such an increase in quantum yield can improve the overall luminance and color rendering index of the white light emitting device.

  FIG. 43 is a schematic view for explaining the operating principle of the light emitting device package according to the eighth embodiment in more detail. Referring to FIG. 43, blue light 1302 is emitted from a blue light source 1301 such as a blue LED and is incident on the phosphor 1330, that is, the first phosphor 1331 and the second phosphor 1332. The phosphor 1330 preferably forms a layer structure separated from each other. This is because it is more suitable to use emitted light emitted to the rear of the exit surface more efficiently than to use a phosphor mixture of separated layers, rather than using a mixture of phosphors.

  The blue light 1302 emitted from the blue light source 1301 can be detected with the naked eye, and may have a wavelength of 420 nm to 480 nm, for example. Preferably, the blue light source 1301 is a blue LED having a peak emission wavelength of 420 nm to 480 nm. The first phosphor 1331 emits green light 1304 and 1305 having a peak emission wavelength of 490 nm to 550 nm after absorbing the blue light 1302. The second phosphor 1332 absorbs the blue light 1302 and the emission light (green light 1305) of the first phosphor 1331, and then emits red light 1306 and 1307 having an emission peak of about 600 nm to 700 nm. In particular, when the second phosphor 1332 has a peak excitation wavelength in the range of 420 nm to 500 nm, the second phosphor 1332 can effectively absorb the blue light 1302 and the green light 1305 (that is, the blue light 1302 and Can be effectively excited by green light 1305). Red light 1306 is red light emitted by the second phosphor 1332 due to absorption of green light 1305 emitted by the first phosphor 1331. The red light 1307 is red light emitted by the second phosphor 1332 due to absorption of the blue light 1302 emitted from the blue light source 1301. The viewer 1309 senses the combination of the green light 1304, the blue light 1302, and the red light 1306, 1307 with the white light 1308.

  As described above, the second phosphor 1332 is double-excited by the blue light source 1301 and the first phosphor 1331 and emits red light. Therefore, the quantum yield of the red phosphor (second phosphor 1332) is improved. This increases the overall brightness of the light emitting device and improves the color rendering index. The first phosphor 1331 may be any phosphor that emits green light having a peak emission wavelength of 490 nm to 550 nm according to the blue light 1302 emitted from the blue light source 1301. When a blue LED having a peak emission wavelength of 420 nm to 480 nm is used as the blue light source 1301, the first phosphor 1331 has a peak emission wavelength of 490 nm to 550 nm, and the emitted light of the blue LED described above. A phosphor having a high quantum efficiency for (blue light having a peak emission wavelength of 420 nm to 480 nm) can be used.

The second phosphor 1332 is a phosphor that emits light having an emission peak in the range of about 600 nm to 700 nm in accordance with the blue light 1302 emitted from the blue light source 1301 and the green light 1305 emitted from the first phosphor 1331. That is, it comprises an inorganic compound represented by the composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, where M is at least one monovalent and A phosphor that is a divalent element and has 0 <x <4 and y = 2x / 3 is used. Preferably, the second phosphor 1332 absorbs not only the blue LED light of 420 nm to 480 nm but also the emission light of the first phosphor 1331 of 490 nm to 550 nm, so that an emission peak of about 600 nm to 700 nm is obtained. The red light which has can be emitted. These phosphors can be double excited by blue light 1302 and green light 1305. As a result, the quantum yield of the red phosphor (second phosphor 1332) is increased, and the overall luminous efficiency, luminance, and color rendering index are improved.

  FIG. 44 is a schematic view schematically showing energy transfer between a green phosphor (first phosphor) and a red phosphor (second phosphor) used in the light emitting device package of the eighth embodiment. . Referring to FIG. 44, the first phosphor is excited by blue light of about 460 nm and emits green light of about 530 nm. The first phosphor absorbs not only blue light of about 460 nm but also a part of the emitted light (green light) of the second phosphor and emits red light of about 620 nm. Thus, the first phosphor emits red light by double excitation. That is, the second phosphor 1332 is disposed on the blue light source 1301 such as a blue LED, and the first phosphor 1331 is disposed on the second phosphor 1332. The green light 1305 emitted backward from the first phosphor 1331 is easily absorbed by the second phosphor 1332 and emits red light 1306. Thus, the red light 1306 emitted from the second phosphor 1332 further increases the overall luminance of the light emitting device and further improves the color rendering index. Further, the green light 1305 emitted backward is effectively used by the second phosphor 1332. The arrangement of the phosphors having such a layer structure can be easily realized by forming a molding resin layer in which the respective phosphors are dispersed.

  FIG. 45 is a cross-sectional view illustrating a light emitting device package according to the ninth embodiment. Referring to FIG. 45, the light emitting device package 1400 includes a package substrate 1431 and a light emitting diode chip 1435 mounted on the package substrate 1431. The package substrate 1431 may include a lower package substrate 1431a in which two lead frames 1432a and 1432b are formed and an upper package substrate 1431b in which the cavity is provided. A light emitting diode chip 1435 is mounted in the cavity region. Both electrodes (not shown) of the light emitting diode chip 1435 are connected to the upper ends of the lead frames 1432a and 1432b by wires.

  A low refractive index region 1436 is provided so as to surround the light emitting diode chip 1435. The low refractive index region 1436 may be an empty space, or may be a region filled with a transparent resin having a relatively low refractive index. When the low refractive index region 1436 is an empty space, it has a refractive index (n = 1) similar to the atmosphere. In the case where the low refractive index region 1436 is formed of a transparent resin, normal epoxy, silicon, or a mixed resin thereof can be used. In this case, the refractive index of the low refractive index region 1436 may be approximately 1.7.

  A high refractive index layer 1437 is formed on the low refractive index region 1436. The high refractive index layer 1437 has a refractive index higher than at least the low refractive index region 1436, and an uneven pattern 1437a is formed on the upper surface. A wavelength conversion layer 1438 containing a phosphor 1439 for converting the wavelength of light emitted from the light emitting diode chip 1435 is formed on the high refractive index layer 1437. The wavelength conversion layer 1438 is a resin layer containing a phosphor and has a refractive index lower than at least the refractive index of the high refractive index layer 1437.

The wavelength conversion layer 1438 includes part or all of the blue phosphor, the green phosphor, and the red phosphor. The red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, where M is at least one 1 Is a valence element and a divalent element, satisfies 0 <x <4, y = 2x / 3, absorbs light emitted from the light-emitting diode chip, and emits light having an emission peak in the range of about 600 nm to 700 nm. At least one or more red phosphors are included.

The high refractive index layer 1437 may be formed of a resin having a high refractive index per se, or may be embodied as a normal transparent resin layer containing high refractive index particles. In this case, the high refractive index particles are composed of GaP, Si, TiO 2 , SrTiO 3 , SiC, cubic or amorphous carbon, carbon nanotubes, AlGaInP, AlGaAs, SiN, SiON, ITO, SiGe, AlN and GaN. Selected from the selected group.

  The high refractive index layer 1437 has a high refractive index so that photons scattered by the phosphor 1439 are totally reflected at the interface with the low refractive index region 1436. The high refractive index layer 1437 is preferably formed so as to have a refractive index of 1.8 or more. However, when the low refractive index region 1436 is formed of a resin having a specific refractive index, the above specific refractive index layer 1437 is formed. The high refractive index layer 1437 may be formed using a material having a higher refractive index so as to have a sufficient difference in refractive index from the resin.

  Even if the interface with the wavelength conversion layer 1438 has a relatively high light extraction critical angle, the light extraction into the wavelength conversion layer 1438 is further facilitated by the uneven pattern of 1437a formed on the high refractive index layer 1437. To be realized. Preferably, the formation period of the uneven pattern 1437a may be in the range of about 0.001 μm to 500 μm. In addition, when the refractive index difference between the high refractive index layer 1437 and the wavelength conversion layer 1438 is too large, it is difficult to expect sufficient light extraction even with the uneven pattern of 1437a. Therefore, the refractive index of the high refractive index layer 1437 is 10 The following is preferable.

  FIG. 46 is a schematic diagram illustrating a light extraction mechanism in the light emitting device package according to the ninth embodiment shown in FIG. Referring to FIG. 46 together with FIG. 45, the light (1) emitted from the light emitting diode chip 1435 proceeds to the wavelength conversion layer 1438 through the low refractive index region 1436 and the high refractive index layer 1437. Usually, the low refractive index region 1436 has a refractive index lower than that of the nitride constituting the light emitting diode chip 1435, but since an uneven pattern (not shown) is formed on the LED surface, the light generated from the light emitting diode chip 1435 is The low refractive index region 1436 can be extracted effectively. In addition, since light traveling from the low refractive index region 1436 toward the high refractive index layer 1437 travels with a high refractive index material, it can be extracted effectively. Since the wavelength conversion layer 1438 has a refractive index lower than that of the high refractive index layer, the wavelength conversion layer 1438 has a limited light extraction critical angle, but can be effectively extracted by the unevenness formed on the upper surface of the high refractive index layer. it can.

  Then, the emitted light (1) of the LED is excited by the phosphor 1439, and the excited partial light (2) can be extracted in a predetermined direction, that is, toward the top of the package. In contrast, another part of the excitation light (3) can travel from the wavelength conversion layer 1438 to the high refractive index layer 1437 toward the inside of the package. Since the wavelength conversion layer 1438 has a refractive index lower than that of the high refractive index layer 1437, the light (3) traveling toward the inside of the package is almost lost, and enters the high refractive index layer 1437. Can do. The light (3) that has entered the high refractive index layer is almost totally reflected due to a large refractive index difference at the interface with the low refractive index region 1436. The totally reflected light (4) travels on top of the high refractive index layer 1437 and can pass through the interface between the high refractive index layer 1437 and the wavelength conversion layer 1438 and be extracted in a predetermined direction. As described above, the high refractive index layer 1437 and the wavelength conversion layer 1438 have a light extraction critical angle limited at the interface by the refractive index difference. It can be easily extracted by pattern.

  As described above, the light (3) scattered by the phosphor 1439 and traveling into the package has a predetermined refractive index by the high refractive index layer 1437 and the low refractive index region 1436 on which the concave / convex pattern 1437a is formed. Total reflection can be effectively performed in the upper direction.

  A wavelength conversion layer containing phosphor particles is arranged on the top, and an optical structure consisting of a high refractive index layer and a low refractive index region having an uneven surface is introduced on the bottom, thereby causing total reflection on the phosphor particles. The traveling direction of the scattered light can be readjusted upwards so that the light extraction efficiency is improved.

  47 to 49 are cross-sectional views illustrating light emitting device packages according to the tenth to twelfth embodiments of the present invention. 47 shows a structure obtained by improving the wavelength conversion layer in the light emitting device package of the ninth embodiment shown in FIG. 45, FIG. 48 shows a structure obtained by improving the structure of the package substrate, and FIG. 49 shows a high refractive index layer. This is a structure in which the method of specifically forming the concavo-convex pattern is formed using only the shape of the high refractive index particles themselves without using a normal molding process or etching process.

  First, the light emitting device package 1540 shown in FIG. 47 includes a package substrate 1541 and a light emitting diode chip 1545 mounted on the package substrate 1541, similar to FIG. The package substrate 1541 may include a lower package substrate 1541a in which two lead frames 1542a and 1542b are formed, and an upper package substrate 1541b in which the cavity is provided. Both electrodes (not shown) of the light emitting diode chip 1545 are connected to the upper ends of the lead frames 1542a and 1542b by wires.

  The low refractive index region 1546 is provided so as to surround the light emitting diode chip 1545 described above. The low refractive index region 1546 may be an empty space or a region filled with a transparent resin having a relatively low refractive index such as epoxy or silicon resin. Further, the low refractive index region 1546 is formed in an empty space region, and a lens (not shown) made of a resin having a low refractive index is disposed in the empty space region so as to surround the light emitting diode chip 1545. A low refractive index region 1546 may be provided.

  A high refractive index layer 1547 is formed on the low refractive index region 1546. The high-refractive index layer 1547 has a refractive index higher than at least the low-refractive index region 1546, and an uneven pattern 1547a is formed on the upper surface. The uneven pattern of 1547a formed on the high refractive index layer 1547 can further facilitate light extraction into the relatively low wavelength conversion layer 1548. Preferably, the concavo-convex pattern formation period of 1547a can be in the range of about 0.001 μm to 500 μm.

  Further, as in this embodiment, a non-reflective layer 1547b may be further formed on the lower surface of the high refractive index layer 1547, that is, on the interface between the high refractive index layer 1547 and the low refractive index region 1546. The non-reflective layer 1547b is made of a non-reflective material in the light wavelength band of the light-emitting diode chip 1545, and the light generated from the light-emitting diode chip 1545 proceeds more effectively to the high refractive index layer 1547. Can do.

  A wavelength conversion layer 1548 containing a phosphor 1549 for converting the wavelength of light emitted from the light emitting diode chip 1545 is formed on the high refractive index layer 1547. The wavelength conversion layer 1548 has a refractive index lower than at least the refractive index of the high refractive index layer 1547.

In this embodiment, the wavelength conversion layer 1548 is an example in which a normal transparent resin region is formed and then a phosphor 1549 is applied on the upper surface thereof. Even in such a structure, since the layer made of the phosphor 1549 is positioned on the optical structure made of the high refractive index layer 1547 and the low refractive index region 1546, the effect of improving the light extraction efficiency can be sufficiently expected. The phosphor 1549 includes part or all of the above-described blue phosphor, green phosphor, and red phosphor. The red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, where M is at least one 1 Is a valence element and a divalent element, satisfies 0 <x <4, y = 2x / 3, absorbs light emitted from the light-emitting diode chip, and emits light having an emission peak in the range of about 600 nm to 700 nm. At least one or more red phosphors are included.

The high refractive index layer 1547 may be formed of a resin having a high refractive index, or may be formed of a normal transparent resin containing particles having a high refractive index. In this case, the high refractive index particles are composed of GaP, Si, TiO 2 , SrTiO 3 , SiC, cubic or amorphous carbon, carbon nanotubes, AlGaInP, AlGaAs, SiN, SiON, ITO, SiGe, AlN and GaN. Selected from the selected group. The high refractive index layer 1547 has a refractive index of at least 1.8 so that the photons scattered by the phosphor 1549 can be totally reflected at the interface with the low refractive index region 1546. The refractive index is preferably 10 or less so that light can be easily extracted into the wavelength conversion layer 1548.

  The manufacturing process of the package according to the present embodiment is not limited to this, but when the low refractive index region 1546 is formed of a transparent resin such as epoxy or silicon resin, the high refractive index layer 1547 and the wavelength conversion layer 1548 are continuously formed. It may be formed through a coating and curing process. However, the concavo-convex pattern of 1547a formed on the high refractive index layer 1547 can be formed by applying mechanical or chemical etching after the curing process or using a molding frame before curing.

  Next, the light emitting device package 1600 shown in FIG. 48 includes a package substrate 1651 and a light emitting diode 1655 mounted on the package substrate 1651. The package substrate 1651 is not limited to this, but two lead frames 1652a and 1652b formed on the upper surface thereof and two connection pads 1654a and 1654b formed on the lower surface thereof are connected to each other. Via holes 1653a and 1653b.

Similar to other embodiments, the light emitting device package 1600 includes a hemispherical low refractive index region 1656 surrounding the light emitting diode 1655 and a high refractive index layer formed on the low refractive index region 1656. 1657 and the wavelength conversion layer 1658 formed on the high refractive index layer 1657 described above. The high refractive index layer 1657 has a refractive index higher than at least the low refractive index region 1656, and a concavo-convex pattern 1657 a is formed on the upper surface. The wavelength conversion layer 1658 has a refractive index lower than at least the refractive index of the high refractive index layer 1657. The wavelength conversion layer 1658 contains a phosphor 1659 for converting the wavelength of light emitted from the light emitting diode 1655. The wavelength conversion layer 1658 is a resin layer containing a phosphor and has a refractive index lower than at least the refractive index of the high refractive index layer 1657 described above. The phosphor 1659 includes part or all of the above-described blue phosphor, green phosphor, and red phosphor. The red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, where M is at least one 1 Is a valence element and a divalent element, satisfies 0 <x <4, y = 2x / 3, absorbs light emitted from the light-emitting diode chip, and emits light having an emission peak in the range of about 600 nm to 700 nm. At least one or more red phosphors are included. The high refractive index layer 1657 may itself be formed of a resin having a high refractive index, or may be embodied as a normal transparent resin layer containing high refractive index particles. In this case, the high refractive index particles are composed of GaP, Si, TiO 2 , SrTiO 3 , SiC, cubic or amorphous carbon, carbon nanotubes, AlGaInP, AlGaAs, SiN, SiON, ITO, SiGe, AlN and GaN. Selected from the selected group.

  In this embodiment, when the hemispherical low refractive index region 1656 is formed as a transparent resin layer, it can be easily formed using a conventional molding process such as a transfer molding process. In this case, the high refractive index layer 1657 and the wavelength conversion layer 1658 which are other layers can be formed through a similar molding process. When the low refractive index region 1656 is provided as an empty space, the high refractive index layer 1657 and / or the wavelength conversion layer 1658 is manufactured through a separate molding process and then attached to the package substrate 1651. Can be implemented. Although the high refractive index layer 1657 and the wavelength conversion layer 1658 are illustrated as hemispherical, the cross section may be manufactured in various shapes such as a square or a triangle.

  Such a variety of shapes can be similarly applied to the structure of FIG. For example, in the embodiment of FIG. 47, the high refractive index layer 1447 is illustrated as having a flat shape, but it may be modified to have a hemispherical shape or other shapes similar to FIG.

  On the other hand, referring to FIG. 49, the light emitting device package 1700 includes a package substrate 1761 and a light emitting diode chip 1765 mounted on the package substrate 1761, similar to the embodiment shown in FIG. The package substrate 1761 includes a lower package substrate 1761a in which two lead frames 1762a and 1762b are formed, and an upper package substrate 1761b in which the cavity is provided.

  A light emitting diode chip 1765 is mounted in the cavity region. Both electrodes (not shown) of the light emitting diode chip 1765 are connected to the upper ends of the lead frames 1762a and 1762b by wires. A low refractive index region 1766 is provided so as to surround the light emitting diode chip 1765.

  The low refractive index region 1766 may be an empty space, but may be a region filled with a transparent resin having a relatively low refractive index. When the low refractive index region 1766 is an empty space, it has a refractive index (n = 1) similar to the atmosphere. When the low refractive index region 1766 is formed of a transparent resin, normal epoxy, silicon, or a mixed resin thereof can be used. In this case, the refractive index of the low refractive index region 1766 may be approximately 1.7.

A high refractive index layer 1767 is formed on the low refractive index region 1766. The high refractive index layer 1767 is formed of high refractive index particles having a refractive index higher than at least the low refractive index region 1766, and the uneven pattern 1767a on the upper surface is formed by the shape of the particles. . Therefore, in the present embodiment, the shape and period of the uneven pattern 1767a is determined by the particle size and shape of the high refractive index particles. The above high refractive index particles were composed of GaP, Si, TiO 2 , SrTiO 3 , SiC, cubic or amorphous carbon, carbon nanotubes, AlGaInP, AlGaAs, SiN, SiON, ITO, SiGe, AlN and GaN. Can be selected from a group.

  The high refractive index layer 1767 employed in the present embodiment is a method in which at least the upper surface is formed with a film structure in which the above described high refractive index particles are arranged in a separate process, and is disposed in the cavity region. Can be formed. In contrast, when the low refractive index region 1766 is formed of a specific resin, the above-described high refractive index particles may be densely applied to the upper surface of the resin.

On the high refractive index layer 1767, a wavelength conversion layer 1768 containing a phosphor 1769 for converting the wavelength of light emitted from the light emitting diode chip 1765 is formed. The wavelength conversion layer 1768 has a refractive index lower than at least the refractive index of the high refractive index layer 1767. The phosphor 1769 includes part or all of the above-described blue phosphor, green phosphor, and red phosphor. The red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, where M is at least one 1 Is a valence element and a divalent element, satisfies 0 <x <4, y = 2x / 3, absorbs light emitted from the light-emitting diode chip, and emits light having an emission peak in the range of about 600 nm to 700 nm. At least one or more red phosphors are included.

  The concavo-convex pattern of 1767a formed on the high refractive index layer 1767 makes it easier to extract light to a wavelength conversion layer having a relatively low refractive index. In addition, when the refractive index difference between the high refractive index layer 1767 and the wavelength conversion layer 1768 is too large, it is difficult to expect sufficient light extraction even with the uneven pattern of 1767a. Therefore, the refractive index of the high refractive index layer 1767 is 10 The following is preferable.

  FIG. 50 is a cross-sectional view schematically illustrating a light emitting device package according to a thirteenth embodiment of the present invention, and FIG. 51 schematically illustrates a wavelength conversion unit and a control unit in the light emitting device package illustrated in FIG. It is the shown perspective view.

  50 and 51, a light emitting device package 1800 according to a thirteenth embodiment of the present invention includes a main body 1810, a light emitting device 1820, a wavelength conversion unit 1830, and a control unit 1840. Is done. The main body 1810 can be made of plastic, resin, or ceramic material, and includes a cavity 1811 having an open front surface, and a light emitting element 1820 described later is accommodated therein. The cavity 1811 has a structure in which the inner peripheral surface is inclined forward for diffusion of light generated from the light emitting element 1820, and the size of the inner peripheral surface expands toward the outer side of the front surface rather than the inner side. Configured to do.

  Therefore, when the cavity 1811 is formed in a cylindrical structure and has a circular or elliptical horizontal cross section as shown in the drawing, the cavity 1811 has a conical shape whose outer diameter is wider than the inner diameter. Have. However, the present invention is not limited to this, and the cavity 1811 may have a rectangular horizontal cross section. In this case, the cavity 1811 is formed in a pyramidal structure having a wider outer cross section than the inner cross section. Can.

  The main body 1810 includes a mounting portion 1812 having a step structure for mounting a wavelength conversion portion 1830 described later on the front surface (upper end) where the cavity 1811 is opened. The mounting portion 1812 is formed with a step downward from the upper end, which is the front surface of the main body 1810, and is provided so that the wavelength conversion portion 1830 is mounted. The mounting portion 1812 is preferably formed along the outer periphery of the cavity 1811.

  One end of the main body 1810 is exposed to the bottom surface of the cavity 1811 and is electrically connected to the light emitting element 1820 mounted on the main body 1810, and the other end is exposed to the outside of the main body. A pair of main terminals 1814 and 1815 are provided. The light emitting device 1820 is a kind of semiconductor device that emits light of a predetermined wavelength by an externally applied power source, and the light emitting device package according to the thirteenth embodiment of the present invention is for changing the color temperature. Unlike the conventional case where a plurality of light emitting elements are used, there is a structural feature that a single light emitting element is provided. The light emitting element 1820 is housed in the cavity 1811 and is electrically connected to the pair of main terminals 1814 and 1815 provided in the body 1810. Implemented.

On the other hand, the wavelength conversion unit 1830 is mounted on the mounting unit 1812 of the main body 1810 so as to cover the cavity 1811 and converts the wavelength of light emitted from the light emitting element 1820. The wavelength conversion unit 1830 includes a fluid storage unit 1831 disposed on the path of light emitted from the light emitting element 1820, the transparent fluid 1832 that has flowed into the fluid storage unit 1831, and the transparent A fluorescent material 1833 dispersed in the fluid 1832. The wavelength conversion unit 1830 adjusts the volume of the fluid storage unit 1831 by changing the volume of the transparent fluid 1832 containing the fluorescent material 1833 and flowing into the fluid storage unit 1831. To control the color temperature. The fluorescent material 1833 included in the wavelength conversion unit 1830 may include part or all of a blue phosphor, a green phosphor, and a red phosphor. The materials described above can be used for the blue phosphor and the red phosphor. The red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, where M is at least one Monovalent and divalent elements satisfying 0 <x <4, y = 2x / 3, absorbing light emitted from the light emitting diode chip and emitting light having an emission peak in the range of about 600 nm to 700 nm At least one kind of red phosphor.

  The fluid housing portion 1831 can be formed of an elastic material having elasticity. As an example, the fluid storage portion 1831 may be formed of silicon or rubber material having elasticity excellent in deformation and contraction force such as contraction and expansion, and has a light transmission property so as not to affect the color temperature. It is preferable. In addition, the fluid accommodating portion 1831 may be formed of a hollow tube structure having a predetermined volume so as to accommodate the transparent fluid 1832 flowing into the inside. In the drawing, the fluid containing portion 1831 is shown as having a disk-like structure, but the present invention is not limited to this, and has a polygonal structure such as a quadrilateral depending on the shape of the outer cross section of the cavity 1811. May be. The transparent fluid 1832 that flows into the fluid storage portion 1831 may contain water, oil, resin, or the like so as to have fluidity, and contains a fluorescent material 1833 that is uniformly dispersed therein. .

  Meanwhile, the controller 1840 is connected to the wavelength converter 1830, and controls the color temperature of the light by changing the volume of the transparent fluid and adjusting the volume of the fluid container 1831. . The control unit 1840 communicates with the fluid storage unit 1831 to store the transparent fluid 1832 and is connected to the reservoir 1841. The transparent fluid 1832 in the fluid storage unit 1831 is connected to the reservoir 1841. And an actuator 1842 for adjusting the capacity of the actuator. The reservoir 1841 is connected to the fluid accommodating portion 1831 and partially accommodates the transparent fluid 1832 filled in the fluid accommodating portion 1831. Therefore, the transparent fluid 1832 having fluidity is not fixed in a state where it is filled in the fluid accommodating portion 1831, but moves between the fluid accommodating portion 1831 and the reservoir 1841. Accordingly, the capacity of the transparent fluid 1832 in the fluid storage portion 1831 can be varied. The reservoir 1841 is preferably made of the same material as the fluid housing portion 1831 and is formed integrally with the fluid housing portion 1831.

  The actuator 1842 is connected to the reservoir 1841 and adjusts the volume of the transparent fluid 1832 that is filled in the fluid storage unit 1831. That is, the transparent fluid 1832 in the reservoir 1841 connected to the actuator 1842 is moved to the fluid accommodating portion 1831 side by the expansion or contraction action of the actuator 1842, or from the fluid accommodating portion 1831 to the above. The volume of the transparent fluid 1832 in the fluid accommodating portion 1831 is adjusted by moving the reservoir 1841 toward the reservoir 1841 side. The actuator 1842 may include a piezo actuator (PZT), a MEMS element, and the like, but is not limited thereto. In order to drive the actuator 1842 through a power source applied from outside, a pair of auxiliary terminals 1844 and 1845 having one end electrically connected to the actuator 1842 and the other end exposed to the outside of the main body 10. May be provided.

  An electronic device (not shown) that controls the operation of the actuator 1842 can be further provided. Although a specific connection structure between the actuator 1842 and the auxiliary terminals 1844 and 1845 is omitted, the auxiliary terminals 1844 and 1845 are illustrated so as to be exposed at the lower end of the main body 1810 in the drawing. However, the present invention is not limited to this, and it may be exposed on the side surface of the main body 1810. The reservoir 1841 and the actuator 1842 may be embedded in the body 1810 adjacent to the cavity 1811. At this time, the main body 1810 is preferably provided with a recessed groove (not shown) in which the reservoir 1841 and the actuator 1842 can be housed. Therefore, the reservoir 1841 and the actuator 1842 are inserted into the receiving groove and attached.

  In the light emitting device package according to the thirteenth embodiment, the reservoir 1841 and the actuator 1842 are arranged along the optical axis along the minor axis direction of the main body 1810. . However, it may be arranged so as to be perpendicular to the optical axis along the major axis direction of the main body 1810. In this case, not only the thickness of the main body 1810 is reduced, but also the reservoir 1841 and the actuator. 1842 can be mounted more efficiently.

  The fluid containing portion 1831 is mounted on the stepped surface of the mounting portion 1812 so as to cover the cavity 1811. At this time, the cavity 1811 of the main body 1810 has a transparent resin. And the light emitting device 1820 disposed in the cavity 1811 can be sealed. In addition, the cavity 1811 is filled with air and may surround the light emitting element 20 disposed in the cavity 1811. In this case, the light emitting element is mounted so as to cover the cavity 1811. It is sealed by the fluid containing portion 1831 described above.

  On the other hand, a method for changing the color temperature by the operation of the wavelength conversion unit 1830 and the control unit 1840 will be described with reference to FIGS. 52 and 53. First, as shown in FIG. 52, when an external power source is applied through a pair of auxiliary terminals 1844 and 1845 and the actuator 1842 expands, the reservoir 1841 connected to the actuator 1842 is used. Is contracted by the actuator 1842, and the volume of the reservoir 1841 is reduced. At this time, the transparent fluid 1832 stored in the reservoir 1841 moves to the fluid storage portion 1831, and the flow rate of the transparent fluid 1832 that fills the fluid storage portion 1831 increases. Therefore, the fluid accommodating portion 1831 is expanded by the inflowing transparent fluid 1832 to increase its volume, and the thickness of the fluorescent fluid layer disposed on the optical axis is increased accordingly. As a result, the light generated from the light emitting element 1820 passes through the thick fluorescent fluid layer, and the color temperature of the emitted light is lowered.

  Next, as shown in FIG. 53, when the actuator 1842 contracts, the reservoir 1841 connected to the actuator 1842 is expanded by the actuator 1842, and the reservoir The volume of 1841 increases. At this time, the transparent fluid 1832 stored in the fluid storage unit 1831 moves to the reservoir 1841 so that the flow rate of the transparent fluid 1832 filling the fluid storage unit 1831 decreases. Become. Therefore, the fluid accommodating portion 1831 is contracted by the transparent fluid 1832 moved to the reservoir 1841 so that the volume is reduced, and accordingly, the thickness of the fluorescent fluid layer disposed on the optical axis is It will decrease. As a result, the light generated from the light emitting element 1820 passes through the fluorescent fluid layer having a reduced thickness, and the color temperature of the emitted light increases.

  In the drawing, it is shown that the front surface (upper surface) of the fluid accommodating portion 1831 expands and contracts in a flat state. May be. Such variable color temperature can be adjusted more precisely by an electronic device (not shown) that controls the actuator 1842. Therefore, unlike existing ones, the color temperature can be adjusted effectively and easily with only a single light-emitting element, and it is not necessary to secure a distance for color mixing, and the light source can be miniaturized. Here, the light-emitting element 1820 may include a resin layer containing a phosphor that converts the wavelength of light or a phosphor film. The phosphor may be all or part of a blue phosphor, a green phosphor, and a red phosphor. In this case, the phosphor converts all or part of the light emitted from the semiconductor element included in the light emitting element 1820. The light emitted from the light emitting element 1820 can be white light or light of a predetermined color. Light emitted from the light emitting element 1820 is converted in wavelength by the wavelength conversion unit 1830 and emitted to the outside. The controller 1840 can control the color of the light emitted from the light emitting device package 1800 by controlling the amount of the fluorescent material 1833 included in the wavelength converter 1830.

  Hereinafter, a surface light source device including a light emitting device package will be described through various embodiments. The surface light source device according to the present embodiment includes the light emitting device package according to the first to thirteenth embodiments described above. The light emitting device package on which the semiconductor light emitting device according to the present embodiment is mounted is applied as a light source for various other devices such as a lighting device and a vehicle headlight, in addition to a surface light source device such as a backlight device. be able to.

  FIG. 54 is a plan view schematically showing an arrangement structure of light emitting modules in the surface light source device according to the first embodiment of the present invention, and FIG. 55 shows a rotational arrangement method of the light emitting modules in FIG.

  First, referring to FIG. 54, a surface light source device 1900 according to the first embodiment includes first to fourth light emitting modules 1901a to 1901d. Each of the first to fourth light emitting modules 1901a to 1901d includes a plurality of light emitting elements 1903 and connectors 1904a to 1904d. The plurality of light emitting elements 1903 can form a light emitting region by being two-dimensionally arranged as rows and columns. Particularly, when using an LED capable of emitting white light, the surface light source device 1900 described above is It can be used for backlight units, lighting devices, etc. The first to fourth light emitting modules 1901a to 1901d have a square structure and can have the same shape, and each has a structure in which a plurality of light emitting elements 1903 and connectors 1904a to 1904d are arranged on an insulating substrate. Applicable.

  The connector 1904a included in the first light emitting module 1901a is disposed adjacent to one vertex of the first light emitting module 1901a. In this case, the apex of the first light emitting module 1901a is a square formed by the first to fourth light emitting modules in FIG. 54, that is, the central point (sometimes referred to as the central point) of the entire surface light source device 1900. Applicable. Further, “adjacent” is understood to indicate that the connector 1904a is disposed closest to a specific vertex among the four vertices forming the first light emitting module 1901a, and as described later, The specific vertex is a rotation center point of the light emitting module.

  The second to fourth light emitting modules 1901b to 1901d have a structure in which the first light emitting module 1901a is sequentially rotated at an angle of 90 ° about the rotation center point. That is, the plurality of light emitting elements 1903 and connectors 1904b included in the second light emitting module 1901b are arranged in such a manner that the plurality of light emitting elements 1903 and connectors 1904a included in the first light emitting module 1901a are rotated 90 ° clockwise. It has a structure. Similarly, a plurality of light emitting elements 1903 and connectors 1904c included in the third light emitting module 1901c are rotated by 90 ° clockwise with respect to the plurality of light emitting elements 1903 and connectors 1904b included in the second light emitting module 1901b. The fourth light emitting modules 1901d having an arrangement structure can be arranged in a similar manner. Such a rotational arrangement method is the same as that shown in FIG. However, the rotation direction may be counterclockwise as shown in FIG. 55 (b) which is not clockwise.

  As shown in FIG. 54, the connectors 1904a to 1904d included in the first to fourth light emitting modules 1901a to 1901d are arranged adjacent to the center point, and the distance between them is very short. Become. As a result, the wiring structure for connecting the power sources can be simplified. In addition, since the first to fourth light emitting modules 1901a to 1901d have a 90 ° rotation arrangement structure in order, the surface light source device 1900 according to the present embodiment can be composed of one type of light emitting module. When the rotating arrangement structure is not used, the first to fourth light emitting modules 1901a to 1901d need to have different structures in order for the connectors 1904a to 1904d to be arranged adjacent to the center point. . That is, unlike the first embodiment, four types of light emitting modules are required. As described above, in the surface light source device according to the first embodiment, the distance between the connectors 1904a to 1904d is shortened, and the electric wiring structure is simple, but one light emitting module is required. In addition, it is possible to obtain a cost saving effect by improving productivity.

  FIG. 56 is a plan view schematically showing an arrangement structure of light emitting modules in the surface light source device according to the second embodiment.

  Referring to FIG. 56, the surface light source device 2000 according to the second embodiment includes first to fourth light emitting modules 2001a to 2001d as in the previous embodiment, and the first to fourth light emitting modules 2001a described above. ˜2001d are configured to include a plurality of light emitting elements 2003 and connectors 2004a to 2004d, respectively. In the surface light source device of the second embodiment, the connectors 2004a to 2004d are formed in a region separate from the light emitting element 2003, unlike the first embodiment of FIG. That is, FIG. 56 shows the surface light source device 2000 as viewed from the direction in which the connectors 2004a to 2004d are arranged. The light-emitting element 2003 may be formed on the opposite side of the light-emitting element 2003, so that the light-emitting element 2003 can be arranged without being restricted by the connectors 2004a to 2004d.

  FIG. 57 is a plan view schematically showing the arrangement structure of the light emitting modules in the surface light source device according to the third embodiment of the present invention.

  Referring to FIG. 57, the surface light source device 2100 according to the third embodiment includes first to third light emitting modules 2101a to 2101c, and the outer boundary lines of the first to third light emitting modules 2101a to 2101c are formed. The shape, i.e., the light emitting region, is circular. As in the first embodiment of FIG. 54, the first to third light emitting modules 2101a to 2101c have the same shape and have an angle formed with a vertex shared by each other, that is, a rotation center point, of 120 ° ( That is, it has a fan shape of 360 ° / 3). The plurality of light emitting elements 2103 included in the first light emitting module 2101a are two-dimensionally arranged in the first and second directions, and the first and second directions form 120 °. In this case, the first direction is the same as the boundary line between the first light emitting module 2101a and the second light emitting module 2101b, and the second direction is the first light emitting module 2101a and the third light emitting module 2101b. This corresponds to the same direction as the boundary line of the light emitting module 2101c.

  The plurality of light emitting elements 2103 and the connector 2104b included in the second light emitting module 2101b are arranged in the clockwise direction with the plurality of light emitting elements 2103 and the connector 2104a included in the first light emitting module 2101a as the rotation axis. The plurality of light emitting elements 2103 and connectors 2104c having a structure rotated by 120 ° and included in the third light emitting module 2101c are the same as the plurality of light emitting elements 2103 and connectors 2104b included in the second light emitting module 2101b. The center point is rotated about 120 ° clockwise around the center point. In the third embodiment, the three-divided structure of the circular surface light source device 2100 has been described. However, according to the embodiment, the shape of the surface light source device is a regular n-gonal shape such as a regular triangle or a regular pentagon ( n may be a natural number of 3 or more). In this case, the n light emitting modules may be arranged at a rotation angle of 1 / n × 360 °.

  FIG. 58 is a plan view schematically showing the arrangement structure of the light emitting modules in the surface light source device according to the fourth embodiment of the present invention.

  Referring to FIG. 58, the surface light source device 2200 according to the fourth embodiment has a structure similar to the surface light source device 1900 described with reference to FIG. 54, and includes first to fourth light emitting modules 2201a to 2201d. Each of the first to fourth light emitting modules 2201a to 2201d includes a plurality of light emitting elements 2203 and connectors 2204a to 2204d, and the second to fourth light emitting modules 2201b to 2201d include the first light emitting module 2201a. Obtained by rotating in order of 90 °.

  In the case of the fourth embodiment, the plurality of light emitting elements 2203 included in the first light emitting module 2201a are arranged in rows and columns, that is, in the x and y directions, but with a pitch (x) in the x direction. The pitches (y) in the y direction are different from each other. In this embodiment, the number of light emitting elements 2203 used in the whole is reduced by making the pitch (y) in the y direction larger than the pitch (x) in the x direction corresponding to a generally employable size. Can do. Specifically, the pitch (x) in the x direction is about 26 to 27 mm, and the pitch (y) in the y direction is about 29 to 37 mm. However, in this embodiment, the pitch (y) in the y direction is larger than the pitch (x) in the x direction. However, in some embodiments, the pitch (x) in the x direction is larger than the pitch (y) in the y direction. May be. That is, it is only necessary that the pitch (x) in the x direction and the pitch (y) in the y direction are different from each other. On the other hand, the pitch used in this specification corresponds to the distance between the centers of adjacent light emitting elements 2203 separated in one direction.

  When the light emitting element array structure has different pitches in the x and y directions as in this embodiment, the variation in luminance can be minimized by increasing the pitch in the y direction. In the first light emitting module 2201a, the pitch (y) in the y direction is larger than the pitch (x) in the x direction, but in the second light emitting module 2201b, the reverse is true, and the third light emitting module 2201c is This is the reverse of the second light emitting module 2201b. The fourth light emitting module 2201d formed by rotating the third light emitting module 2201c by 90 ° clockwise has the same pitch structure as the second light emitting module 2201b. Thus, by having an arrangement structure that is opposite to the adjacent light emitting modules, it is possible to minimize the variation in luminance caused by the difference in the pitch in the x and y directions, that is, the surface light source described above. The device 2200 can reduce the number of light emitting elements 2203 while maintaining the uniformity of the luminance distribution.

  In this case, the problem of a decrease in luminance that occurs while the number of light-emitting elements 2203 decreases can be solved by increasing the injection current. As described above, when the arrangement method of the first light emitting modules 2201a and the area occupied by the entire light emitting region are determined, the first light emitting module 2201a is rotated clockwise or counterclockwise to change the arrangement method of the remaining light emitting modules. The brightness uniformity and the reduction in the number of light emitting elements can be obtained by rotating in any direction.

  In the first to fourth embodiments, the case where the overall shape of the surface light source device is square or circular has been described. However, as shown in FIG. 59, the surface light source device can also be applied to a rectangular surface light source device. .

  FIG. 59 is a plan view showing a surface light source device according to a fifth embodiment. In the case of this embodiment, the surface light source device 2300 has a rectangular shape, and can be manufactured by connecting and attaching four surface light source devices 1900 of the embodiment of FIG. Thus, the surface light source device provided by the present embodiment can be applied to sizes of 300 × 1200, 600 × 1200, etc. in addition to the sizes of 300 × 300 and 600 × 600. As a result, the surface light source device having the above-described structure can be employed in a backlight unit or the like that emits light from the rear surface of the LCD panel.

The surface light source devices according to the first to fifth embodiments described above employ the light emitting device packages according to the first to thirteenth examples, and each light emitting device package is synthesized according to the first to eleventh examples. (Sr, M) 2 SiO 4 -xN y : An inorganic compound represented by a composition formula of Eu, wherein M is at least one monovalent and divalent element, and 0 <x <4, A wavelength conversion unit including at least a red phosphor that satisfies y = 2x / 3 and absorbs light emitted from the light emitting diode chip and emits light having an emission peak in a range of about 600 nm to 700 nm is provided.

  FIG. 60 is a cross-sectional view showing the backlight unit of the first embodiment employing the surface light source devices according to the first to fifth embodiments of the present invention described above.

  Referring to FIG. 60, the backlight unit 2400 according to the first embodiment may include the surface light source devices according to the first to fifth embodiments having the above-described structure, and one of them is cited. I will explain. The surface light source device includes a plurality of light emitting elements 2402 arranged on a substrate 2401, and the light emitting elements 2402 are arranged at different pitches (P1, P2). Although not shown in detail, the light emitting region of the surface light source device includes first to nth light emitting modules formed by being divided into n equal parts, and the clockwise or counterclockwise direction from the first light emitting module. Are sequentially rotated at an angle of 360 ° / n to form second to nth light emitting modules. Although not shown, a connector for supplying power to the plurality of light emitting elements 2402 is disposed adjacent to the rotation center of the first to nth light emitting modules, so that Efficiency can be increased.

  On the upper part of the surface light source device, a diffusion sheet for uniformly diffusing incident light, or a diffusion plate and an upper part of the diffusion sheet or diffusion plate, the incident light is condensed vertically. An optical sheet 2414 including a condensing sheet and the like is disposed. The optical sheet 2414 may further include a protective sheet disposed on the light condensing sheet and protecting the lower optical structure. A side wall 2413 having an inclined surface is formed on the upper surface edge of the substrate 2401 so as to surround the light emitting element 2402 and in the direction in which the light emitting element 2402 is disposed. In addition, a reflective layer 2411 capable of reflecting light emitted from the light emitting element 2402 upward may be provided on the upper surface of the substrate 2401. On the other hand, the pitch (P1, P2), which is the arrangement interval of the light emitting elements 2402, is preferably smaller than the optical distance (l). If this condition is not satisfied, there is a possibility that the luminance uniformity of the surface light source device is lowered or a hot spot is visible. Here, the optical distance (l) can be understood as a distance from the light emitting surface of the light emitting element 801 to the optical sheet 2414, that is, a distance in which light travels in the vertical direction.

  FIG. 61 is a perspective view showing a surface light source device according to a sixth embodiment of the present invention. As shown in FIG. 61, the surface light source device 2500 includes a lower frame 2510, a light emitting element package 2520, a light guide plate 2530, and an optical sheet 2540. At this time, the surface light source device 2500 can be used in a liquid crystal display device together with a liquid crystal panel 2550 that displays an image by adjusting light transmittance. The optical sheet 2540 is mounted on the light guide plate 2530 and may include a diffusion plate, a diffusion sheet, a prism sheet, and a protective sheet.

  The light guide plate 2530 is divided into a plurality of pieces, the plurality of light guide plates are arranged in parallel in the storage space of the lower frame 2510, and the light emitting element package 2520 is arranged on the side surface of the light guide plate 2530. Here, a plurality of the light guide plates 2530 may be individually arranged, but may be connected and arranged so that the plurality are integrated.

The light emitting device package 2520 includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4−x N y : Eu synthesized according to Example 1 to Example 11, where M is at least One monovalent and divalent element, 0 <x <4, y = 2x / 3, red phosphor, blue phosphor, green phosphor, and yellow phosphor are appropriately mixed in the resin material A wavelength converter is provided. Although not shown, a reflection plate may be further provided below the light guide plate 2530, and the surface light source device may be mounted and fixed in the internal space of the lower frame 2510.

  FIG. 62 is a schematic cross-sectional view for explaining the surface light source device according to the seventh embodiment.

  As shown in FIG. 62A, the surface light source device according to the present embodiment is a tandem surface light source device, and includes n LED light sources and n flat light guide plates. In the LED light source, a plurality of LED packages 2601 are arranged in a row on a substrate 2600, and the n LED light sources configured in this way are arranged in parallel to each other. Flat-type light guide plates 2602 and 2605 are arranged on one side along the n LED light sources.

  The surface light source device is provided with a reflection member (not shown) that is disposed below the LED packages 2601 and 2604 and below the flat light guide plates 2602 and 2605 and reflects light emitted from the LED light sources. Is done. In addition, a diffusion sheet that diffuses light reflected in the reflection member, refracted by the flat light guide plate, and emitted to the liquid crystal panel side in a plurality of directions is passed over the flat light guide plate and the diffusion sheet. An optical sheet such as a prism sheet is provided to collect the collected light within the front viewing angle.

  Specifically, the LED light source is composed of a plurality of LED packages each having a top view LED mounted thereon. The flat light guide plates 2632 and 2635 are plate-types, are arranged in a direction in which light is emitted from the LED light source, and are made of a transparent material so that light can pass through. The flat type light guide plate has a simpler shape than the wedge type light guide plate, is easily mass-produced, and can easily align the position of the light guide plate on the LED light source.

  Further, the flat light guide plates 2602 and 2605 are formed as a light incident portion where light emitted from the LED light source is incident, a flat plate having a uniform thickness, and the liquid crystal panel using light incident from the LED light source as illumination light. A light emitting portion having a light emitting surface that exits on the side, and a tip end portion that is formed on the opposite side of the light incident portion with respect to the light emitting portion, and has a thickness smaller than the thickness of the light incident portion. The tip of the light plate 2602 is disposed so as to cover the LED package 2604. That is, the (n + 1) th LED light source is positioned below the tip of the nth flat light guide plate. And the front-end | tip part of the flat type light-guide plate 2602 has a prism shape in the lower surface.

  As shown in FIG. 62B, the light emitted from the LED package 2604 is not directly emitted to the flat light guide plate 2602 but is scattered by the prism shape provided on the lower surface of the front end portion of the flat light guide plate 2602. Is distributed. Thereby, hot spots generated on the light guide plate on the LED light source can be removed.

  FIG. 63 is a schematic perspective view for explaining the flat light guide plate shown in FIG. As shown in FIG. 63, the flat type light guide plate 2700 is formed of a light incident part 2701 to which light emitted from an LED light source composed of a plurality of LED packages is incident and a flat type with a uniform thickness. An emission part having an emission surface 2704 that emits light incident on the part 2701 as illumination light to the liquid crystal panel side, and an opposite side of the light incident part 2701 with reference to the emission part. And a tip portion 2702 having an end surface with a narrow thickness.

  The tip portion 2702 includes a prism shape 2703 to disperse a part of the light emitted from the LED package arranged in the lower portion of the tip portion 2702. The prism shape 2703 may be at least one of a triangular prism, a conical prism, and a hemispherical prism that can disperse and scatter incident light. The prism shape of the tip portion 2702 may be formed on the entire tip portion 2702, or may be partially formed only on the upper part of the LED package. With such a prism shape, hot spots generated on the light guide plate on the LED package can be removed.

  Therefore, this embodiment disperses hot spots generated on the light guide plate on the LED package by part of the light emitted from the LED package by processing a prism shape on the lower surface of the tip portion in the flat light guide plate. For this reason, there is no need to process a separate diffusion sheet and prism sheet between the LED package and the light guide plate, and the manufacturing process is simplified.

  FIG. 64 is an exploded perspective view of the backlight device according to the second embodiment of the present invention, and FIG. 65 is seen along the line II ′ after the backlight device shown in FIG. 64 is stacked. FIG. Here, the backlight device may include a large number of light guide plates, but only two light guide plates are shown for convenience of explanation.

  Referring to FIGS. 64 and 65, the backlight device includes a lower cover 2810, a light guide plate 2820, a light source device 2830, and fixing means 2840. The lower cover 2810 has a storage space. For example, the storage space may be formed by a plate forming a bottom surface of the lower cover 2810 and a side wall bent at the edge of the plate. The lower cover 2810 may include a fastener or a fastening portion 2811 to which a fixing unit 2840 described later is fastened. Here, the fastener or the fastening portion 2811 may be a through-hole portion through which a fixing means 2840 described later passes or a groove portion into which the fixing means is inserted.

  The light guide plate 2820 is divided into a large number. The light guide plate 2820 divided into a large number is arranged in parallel in the storage space of the lower cover 2810. Each light guide plate 2820 includes a through hole 2821 that penetrates the body. The through hole 2821 is disposed at the edge of the light guide plate 2820. However, in the embodiment of the present invention, the position and number of the through holes 2821 are not limited. The through hole 2821 is disposed so as to correspond to the fastening portion 2811. Although the light guide plate 2820 has a quadrangular shape, the present invention is not limited to this, and the light guide plate 2820 may have various shapes such as a triangle and a hexagon.

A plurality of light source devices 2830 that provide light to the light guide plate 2820 are disposed on one side of each of the light guide plates 2820. Each light source device 2830 may include a substrate 2832 having a light source for forming light, that is, an LED package 2831 and a plurality of circuit patterns for applying a driving voltage of the LED package 2831. For example, the LED package 2831 includes sub-light emitting diodes that implement blue, green, and red, respectively. In this case, the sub light emitting diode may include a blue light emitting diode and a phosphor that converts a part of blue light emitted from the blue light emitting diode into red and green. At this time, the blue color and the red and green colors are mixed to realize white light. Here, the red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, and the above M is at least It is a monovalent and divalent element, and is a fluorescent material with 0 <x <4 and y = 2x / 3.

  The light formed by the light source device 2830 is incident on the side surface of the light guide plate 2820 and is emitted upward by total internal reflection of the light guide plate 2820. The fixing means 2840 serves to fix the light guide plate 2820 to the lower cover 2810 in order to prevent the light guide plate 2820 from flowing. The fixing means 2840 is inserted into the through hole 2821 of the light guide plate 2820 and fixes the light guide plate 2820 on the lower cover 2810. In addition, the fixing means 2840 passes through the fastening portion 2811 of the light guide plate 2820, for example, the through hole portion or the insertion groove through the through hole 2821 of the light guide plate 2820. Can be inserted. The fixing means 2840 includes a body portion 2842 and a head portion 2841 extending from the body portion 2842.

  The body portion 2842 passes through the through hole of the light guide plate 2820 and is fastened to the fastening portion 2811. In other words, the body portion 2842 serves to connect the light guide plate 2820 and the lower cover 2810 to each other and fix the light guide plate 2820 on the lower cover 2810. The head portion 2841 has a width wider than the body portion 2842, thereby preventing the fixing means 2840 from completely coming out through the through hole 2821 of the light guide plate 2820. The head portion 2841 may have any one of various shapes, for example, a semicircular shape, an anti-elliptical shape, a square shape, and a triangular shape. Here, in the case where the head portion 2841 has a triangular cross-sectional shape, contact between the fixing means 2840 and an optical member 2860 described later can be minimized, and generation of black spots by the fixing means 2840 can be minimized. Can be

  The light guide plate 2820 and the optical member 2860 are spaced apart from each other, so that light emitted from the light guide plate 2820 can be uniformly provided on the optical member 2860. Here, the head portion 2841 supports the optical member 2860 to maintain a distance between the light guide plate 2820 and an optical member 2860 described later. Here, the distance between the light guide plate 2820 and the optical member 2860 can be adjusted by adjusting the height of the head portion 2841. The fixing unit 2840 can be made of a material that transmits light, for example, a transparent plastic, in order to minimize the influence on the image quality.

  In addition, a reflection member 2850 may be disposed below each light guide plate 2820. The reflection member 2850 improves light efficiency of the backlight device by reflecting light emitted to the lower portion of the light guide plate 2820 and re-entering the light guide plate 2820. The reflective member 2850 may include a through portion 2851 corresponding to the through hole 2821 and the fastening portion 2811. The fixing means 2840 can be fastened to the fastening portion 2811 via the through hole 2821 and the through portion 2851. Accordingly, when the reflection member 2850 is divided into a large number like the light guide plate 2820, the reflection member 2850 can be fixed on the lower cover 2810 by the fixing means 2840.

  In addition, the backlight device may further include an optical member 2860 disposed on the light guide plate 2820. Examples of the optical member 2860 may include a diffusion plate, a diffusion sheet, a prism sheet, and a protective sheet disposed on the light guide plate 2820. Therefore, in the embodiment of the present invention, the backlight device can further improve the local dimming effect by partial driving by including a plurality of light guide plates. In addition, the light guide plate divided into a plurality of pieces can be fixed on the lower cover using a fixing means, thereby preventing defects due to the flow of the light guide plate. Further, the fixing means can maintain a constant distance between the light guide plate and the optical member, and uniform light can be provided to the liquid crystal panel.

  66 is a plan view showing the LED backlight device according to the third embodiment, FIG. 67 is a cross-sectional perspective view of the region A shown in FIG. 66 before fastening the substrate, and FIG. It is a cross-sectional perspective view after the board | substrate fastening of A area | region shown in FIG. 69 is a cross-sectional view taken along the cutting line II-II ′ of FIG.

  As shown in FIGS. 66 to 69, the LED backlight device according to the third embodiment includes a lower cover 2910 having a fastener or a fastening portion including a first through hole or a groove of 2910a, and the lower portion described above. A plurality of light guide plates 2920 arranged on the cover 2910, and a wiring provided horizontally on the bottom surface of the lower cover 2910 on one side of each of the light guide plates 2920, to which a voltage is applied from the outside, are formed. And mounted on a substrate 2931 provided on one side of the light guide plate 2920 and a substrate 2931 having a second through hole 2931a corresponding to (or facing) the first through hole 2910a. A number of LED packages 2932 that provide the second through holes and / or 2931a provided in the substrate 2931. Provided on the lower cover 2910 it is fastened to the first through hole 2910a, and includes a fixing unit 2940 to compress the one side edge regions of adjacent light guide plate 2920, a.

  Here, there is a first through hole 2910a (or a concave groove (fastening) groove formed on the plate) that forms a storage space and penetrates the plate forming the bottom surface to form a circular, rectangular or elliptical shape. The lower cover 2910 is made of iron (Fe) or electrogalvanized steel sheet (EGI) or the like to form a lower frame. Further, the lower cover 2910 is formed by extending vertically upward in the plate edge region forming the bottom surface. It can have a side wall, i.e. a side frame. At this time, the bottom surface of the lower frame can be divided into a plurality of regions formed in a row for the configuration of the split backlight device. In this case, the plurality of regions are, for example, concave shapes formed in one side region. The groove can be demarcated. Of course, the concave groove that divides the plurality of regions here corresponds to a storage groove of the substrate 2931 described later.

  In addition, the first through holes 2910a on the lower cover 2910 may have various shapes other than circular, elliptical, or rectangular shapes. A form of a through hole having two long sides arranged in parallel and two short sides formed to be connected to each other with a predetermined curvature at both ends of the two long sides can be shown. 2910a is more preferably formed on the lower cover 2910 so that the major axis direction (Y-axis) of the first through hole of the 2910a is the same direction as the light traveling direction. The (fastening) groove also has the same structural features as described above.

  In the case where the bottom surface of the lower cover 2910 or a concave storage groove in which the substrate 2931 is stored is formed, reflectors (not shown) are attached to a plurality of bottom surfaces excluding the concave groove. . Such a reflector usually uses a white polyester film or a film coated with metal (Ag, Al) or the like. The light reflectance of the visible light on the reflector is about 90 to 97%. Yes, the thicker the coated film, the higher the reflectivity.

  At this time, a plurality of reflectors provided on the bottom surface of the lower cover 2910 are positioned between the LED package 2932 to which light is provided and the light guide plate 2920 positioned adjacent to the back surface of the LED package 2932. It may be formed extending. In such a case, the light provided and guided from one side of the light guide plate 2920 is reflected again by the reflecting plate without interference from the LED package 2932 disposed on the other side of the light guide plate 2920, and then the upper side. Can be provided in the direction of an optical member (not shown) included in the light, and the light reflection efficiency can be increased.

  An LED light source 2930 is provided on one side of the concave housing groove or the light guide plate 2920 of the lower cover 2910. At this time, the LED light source 2930 is provided, for example, in a concave storage groove and is provided horizontally on the bottom surface of the lower cover 2910, wiring is formed so that a voltage is applied from the outside, and the LED light source 2930 is provided on the lower cover 2910. The substrate 2931 having a second through hole 2931a corresponding to the first through hole 2910a, that is, a PCB, and an LED package 2932 mounted on the substrate 2931.

  Here, the substrate 2931 has a second through-hole 2931a formed between the LED package 2932 and the LED package 2932. Thus, the substrate 2931 having the second through-hole 2931a is The lower cover 2910 is provided on the bottom surface of the lower cover 2910 so as to correspond to (or face to) the first through-hole 2910a provided on the lower cover 2910, and formed on the substrate 2931 of 2931a. The second through-hole can be circular or elliptical as in the first through-hole 2910a provided in the lower cover 2910, but in this embodiment, the through-hole having a width in the longitudinal direction, Two long sides that are aligned with each other, and both ends of the two long sides are connected to each other with a predetermined curvature. In addition, the shape of the through-hole having two short sides is shown, but the long-axis direction (X-axis) of the second through-hole 2931a is formed to be perpendicular to the light traveling direction, so that the substrate is eventually formed. The second through hole 2931a provided in 2931 is formed such that its long axis direction (X axis) intersects the long axis direction (Y axis) of the first through hole 2910a provided in the lower cover 2910. Has been.

  At this time, the size of the second through hole of 2931a formed on the substrate 2931, more precisely, the distance (or distance) between the two long sides is the diameter of the body of the fixing means 2940 on which the thread is formed. The size of the second through-hole of 2931a may affect the distance between the LED package 2932 that provides light and the light guide plate 2920 that is guided by the light provided from the LED package 2932. To get. This will be further described later.

  In addition, the LED package 2932 is fixed again on the substrate 2931 and forms an external frame to have a package main body 2933 having a storage groove, and an LED chip 2935 mounted in the storage groove of the package main body 2933 to provide light. And a pair of first and second electrode structures (not shown) that are formed so as to be exposed in the above-mentioned storage grooves, are mounted with LED chips 2935, and are electrically connected to the wiring on the substrate 2931. Has been.

  In this case, when the LED chip 2935 is a blue light emitting diode chip, the LED package 2932 may additionally include a resin wrapping portion 2936 formed in the storage groove to provide white light. The resin packaging part 2936 can include red and green phosphors. For example, the resin wrapping portion 2936 may be formed through UV (ultraviolet) curing or thermosetting after injecting gel-shaped epoxy resin or silicon resin containing red and green phosphors into the housing groove of the package body 2933. it can.

Of course, the LED package 2932 made of a blue light-emitting diode chip and a yellow phosphor is not limited here. For example, the near-ultraviolet chip and the red, green, and blue fluorescence provided on the near-ultraviolet chip are used. It may consist of a resin wrapping part in which the body is mixed, or a resin wrapping part formed by sequentially laminating red, green and blue phosphors. Here, the red phosphor includes an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu synthesized according to Example 1 to Example 11, and the above M is at least It is a monovalent and divalent element, and is a fluorescent material with 0 <x <4 and y = 2x / 3.

  A plurality of light guide plates 2920 are provided on the bottom surface of the lower cover 2910 divided into a plurality of regions. At this time, the side surface of the light guide plate 2920 is in close contact with the package body 2933 so that the light provided from the LED chip 2935 mounted in the housing groove of the package body 2933 enters the light guide plate 2920 without loss. Preferably it is provided. Such a light guide plate 2920 is made of a PMMA material, and has the least water absorbability with respect to light in the visible light region among polymer materials, so that the transparency and gloss are very large. This is high in mechanical strength, is not cracked or deformed, is light and has high chemical resistance. In addition, the transmittance of visible light is as high as about 90 to 91%, the internal loss is very small, and it is strong in mechanical properties such as tensile strength, bending strength, and extension strength, chemistry, and resistance.

  A fixing means 2940 is fastened to the substrate 2931 between the light guide plate 2920 and the light guide plate 2920. Such fixing means 2940 is in the form of a screw made of a transparent material, and is provided on both sides of the LED package 2932, that is, on the front surface from which light is emitted and on the rear surface located on the opposite side of the front surface. Corresponding to the second through-hole 2931a and the second through-hole 2931a provided in the substrate 2931 for the purpose of fixing the adjacent light guide plates 2920 at the same time while keeping the interval between the light guide plates 2920 constant. The lower cover 2910 is fastened through a first through hole 2910a provided in the lower cover 2910. At this time, the fixing means 2940 in the present embodiment is made of a transparent material so that the light guided from within the light guide plate 2920 is provided to the optical member disposed on the upper side without receiving interference, The light guide plate 2920 is preferably made of the same material.

  The fixing means 2940 of the present embodiment includes a head having various shapes such as a substantially circular shape or a quadrilateral shape, and a cylindrical or columnar body portion formed extending from the head. The fixing means 2940 is fixed to the second through-hole 2931a provided in the substrate 2931 and / or the first through-hole 2910a provided in the lower cover 2910 through a screw thread formed on the outer surface of the body portion. be able to. Of course, the body portion of the fixing means 2940 here may take the form of a quadrangular prism. At this time, the size of the head is designed so as to partially cover the space between the light guide plate 2920 and the light guide plate 2920 and one side edge region of the light guide plate 2920, and between the light guide plate 2920 and the light guide plate 2920. The diameter of the body part may be slightly changed according to the interval, and the diameter of the body part is two in line with the second through hole of 2931a provided in the substrate 2931 and / or the first through hole of 2910a provided in the lower cover 2910. It is preferable to be formed in the same manner as the distance or distance between the long sides.

  Further, as described above, the fixing means 2940 can slightly change the size of the head and the diameter of the body portion with respect to the size of the second through hole of 2931a provided in the substrate 2931. The size of the second through-hole of 2931a provided in the base plate is small because the diameter of the body portion of the fixing means 2940 is small, and the distance between the LED package 2932 and the light guide plate 2920 can be narrowed. It means that. Such a fixing means 2940 has an upper corner of the light guide plate 2920 disposed adjacent to the substrate 2931 on which the LED package 2932 is fixed when fastened to the substrate 2931 and / or the lower cover 2910 by a screw method. By pressing the region with the head portion, the flow of the light guide plate 2920 can be prevented even if an external impact occurs. At this time, the fixing means 2940 further reinforces the strength of the force by additionally fastening a nut to a portion exposed to the outside through the first through hole 2910a provided in the lower cover 2910. it can.

  That is, the fixing means 2940 fastened on the substrate 2931 can serve as a spacer between the LED package 2932 and the light guide plate 2920, so that the distance between the LED package 2932 and the light guide plate 2920 is kept constant. Thus, the contraction and / or expansion of the light guide plate 2920 can be handled. Of course, the fixing means 2940 need not be in the form of a thread. For example, as described above, as shown in FIG. 65, the second through-hole 2931a provided in the substrate 2931 and the 2910a provided in the lower cover 2910 by the flange formed at the end portion corresponding to the head of the screw. After being fastened through the first through hole, the lower cover 2910 may fix the first through hole.

  An optical member (not shown) is provided on the upper side of the plurality of light guide plates 2920 to supplement the optical characteristics of light provided through the light guide plate 2920. At this time, the optical member is formed with, for example, a diffusion plate on which a diffusion pattern for reducing the variation of light transmitted through the light guide plate 2920 and a condensing pattern for increasing the front luminance of light are formed. Prism sheet or the like. With the above configuration, the present embodiment can guide the light by external impact or the like by fixing the light guide plate 2920 with the fixing means 2940 provided between the light guide plate 2920 and the light guide plate 2920 to maintain a certain distance. The flow of the light plate 2920 can be prevented, and the contraction of the light guide plate 2920 in the direction (X axis) perpendicular to the light traveling direction can be dealt with. Further, the second through-hole 2931a provided in the substrate 2931 formed to have the major axis direction and the minor axis direction causes the substrate 2931 to contract in the major axis direction (X-axis) of the second through-hole of 2931a. Even if it occurs, this can be dealt with.

  Furthermore, by a first through hole 2910a provided in a lower cover 2910 having a major axis direction (Y axis) formed along the light traveling direction, and fixing means 2940 fastened to the first through hole 2910a. The light guide plate 2920, the fixing means 2940 and / or the substrate along the long axis direction (Y axis) of the first through hole 2910a provided in the lower cover 2910 when the light guide plate 2920 expands and / or contracts. Since the 2931s can move together, the constant distance between the light guide plate 2920 and the LED package 2932 is maintained as it is, and the bright spot and bright line phenomenon can be improved (compared to the prior art).

  On the other hand, the liquid crystal display device according to the present embodiment includes the LED backlight devices according to the second and third embodiments, and further includes a liquid crystal panel (not shown) provided on the optical member. . At this time, the liquid crystal display device may further include a mold structure called a main support in order to prevent distortion of the display device due to an external impact or the like. A backlight device is provided below the main support. A liquid crystal panel is mounted on the upper side. The above-described liquid crystal panel is formed by bonding a thin film transistor array substrate and a color filter substrate, and includes a liquid crystal layer injected through the two substrates.

  At this time, signal lines such as gate lines and data lines are formed on the thin film transistor array substrate so as to cross each other, and a thin film transistor (TFT) is formed at the intersection of the data lines and the gate lines. The TFT switches a video signal transmitted from the data line to the liquid crystal cell of the liquid crystal layer, that is, a data signal of red R, green G, and blue B, in response to a scan signal provided through the gate line. I am doing so. A pixel electrode is formed in the pixel region between the data line and the gate line.

  On the color filter substrate, a black matrix formed corresponding to the gates and data lines of the thin film transistor array substrate, and a region defined by the black matrix, and colors of red R, green G, and blue B are provided. And a common electrode or the like provided on the black matrix and the color filter.

  In the edge region of the thin film transistor array substrate to which the color filter substrate is attached, a data pad extending from the data line and a gate pad extending from the gate line are formed. However, there are provided a gate driver and a data driver connected to the data pad and the gate pad, respectively, for applying a signal. Further, on the liquid crystal panel, an upper cover that covers the four edge regions of the liquid crystal panel and is fixed to the lower cover 2910 or the side wall of the main support is provided. Of course, the upper cover is made of the same material as the lower cover 2910.

  FIG. 70 is a plan view schematically showing a backlight unit according to the fourth embodiment of the present invention, and FIG. 71 shows combinations of LEDs mounted on the LED module shown in FIG. 70 according to examples. FIG. 72 is a graph showing a distribution of LEDs according to a forward voltage.

  70 to 72, a backlight unit 3000 according to the fourth embodiment of the present invention includes a plurality of LED modules 3010 including a plurality of LEDs 3020 and a plurality of LEDs 3020 included in the plurality of LED modules 3010. It comprises one or more drive drivers 3030 that adjust the brightness. As shown in the drawing, in this embodiment, an edge system is employed in which an LED module 3010 used in a linear light source facing one side or a plurality of side surfaces of the light guide plate 3050 is arranged along the inner side surface of the frame 3040. This will be explained as a standard. However, the present invention is not limited to this, and a direct method may be used. However, since there is only a difference in the arrangement position of the LED module, a specific description thereof will be omitted.

  The LED module 3010 includes a plurality of LEDs 3020 and emits white light, thereby becoming a unit that can be adopted by a surface light source or a linear light source having a certain area as a unit, and mounted on a submount such as a substrate. A plurality of LEDs 3020 can be included. Here, the plurality of LEDs 3020 are preferably white LEDs, but are not limited thereto.

As shown in FIG. 71, the plurality of LEDs 3020 included in each of the LED modules 3010 are mounted on a substrate and are electrically connected to each other. At this time, the plurality of LEDs included in each LED module 3010 is provided. The LEDs 3020 form an LED array connected in series with each other. A feature of the present embodiment is that, in forming the LED array provided in each LED module 3010, the LED array is formed by a method of subdividing the characteristics of the LEDs into predetermined sections and combining them. In general, a single LED manufactured by packaging an LED chip has characteristics such as color coordinates, luminance, forward voltage (V f : Forward Voltage), wavelength, and the like corresponding to a specific range of sections. The values possessed by each characteristic do not completely coincide with each other as a whole but show a distribution with a slight difference. That is, the color coordinate range section and the forward voltage range section of each single LED do not all coincide with each other, and there may be a difference in the upper limit value or the lower limit value. Therefore, when mounting only a plurality of LEDs 3020 to form an LED array, when mounting only LEDs having characteristics corresponding only to a specific range section, for example, only LEDs having a high forward voltage (V f ) are mounted. Contrary to the LED module, a large voltage difference (ΔV) occurs between the LED module on which only a low LED is mounted, resulting in a defect in brightness uniformity, causing a problem of unevenness on the screen.

Therefore, in the present embodiment, the forward voltage (V f ) of the plurality of LEDs among the LED characteristics is subdivided into a plurality of sections according to the LED distribution, and the LEDs having the forward voltage corresponding to each section are alternately arranged for each section. To form an LED array. Here, the forward voltage (V f ) means a voltage applied to both ends of the LED terminals connected in the forward direction.

This will be described in more detail with reference to FIG. 72 (a) and 72 (b) are graphs showing the LED distribution according to the forward voltage. As shown in FIG. 72A, when the range of the forward voltage (V f ) of the LED 3020 is narrow, the range section is subdivided into two sections (A section and B section) based on the center of the distribution degree. can do. In this case, the types of LED 3020 to be mounted are classified into two types, a type having a forward voltage corresponding to the A section and a type having a forward voltage corresponding to the B section. An array is formed. In FIG. 71 (a), the arrays are combined in the order of ABAB ..., but the present invention is not limited to this, and the array may be formed by mounting in various combinations such as AABB and ABBA.

On the other hand, as shown in FIG. 72B, when the range of the forward voltage (V f ) of the LED is wide, the range section is subdivided into three sections (A section, B section, and C section). Can do. In this case, the types of LEDs 3020 to be mounted include a type having a forward voltage corresponding to the A section, a type having a forward voltage corresponding to the B section, and a type having a forward voltage corresponding to the C section. They are classified into three types, and are alternately mounted to form an LED array. In FIG. 71 (b), the arrays are combined in the order ABCABC ..., but the present invention is not limited to this, and the array may be formed by being mounted in various combinations such as ABAC and ABBC. 71 and 72, the forward voltage (V f ) is described by being subdivided into two or three range sections, but is not limited thereto, and may be subdivided into various range sections.

In this way, by alternately mounting the LEDs 3020 having the forward voltage (V f ) corresponding to each section, the average value of the forward voltage of the LED module 3010 including them can be predicted. It is also possible to set the spraying to be reduced to have a specific range value. Then, by reducing the deviation of the forward voltage (V f ) between the LEDs 3020 connected in series in the module, the voltage difference (ΔV) between the LED modules 3010 is reduced, and the brightness is uniform throughout. Can be obtained.

  At least one drive driver 3030 is provided to adjust the brightness of the plurality of LEDs 3020 provided in each of the plurality of LED modules 3010, and is electrically connected to the plurality of LED modules 3010. . Although not shown in the drawings, a sensor for detecting light emitted from the LED is provided so that the predetermined brightness and color sense can be compared with the sensed brightness and color sense to compensate for the LED. Adjust the brightness. In addition, the controller may further include a control unit that is connected to the drive driver 3030 and controls the drive driver 3030. As shown in the drawing, each of the LED modules 3010 connected to the driving driver 3030 is connected to one driving driver 3030, and each of the driving drivers is connected to at least two LED modules 3010. At this time, the LED modules 3010 connected to the same drive driver 3030 have a small voltage difference from each other or have forward voltages in substantially the same range. This can be adjusted by the combination of the LEDs 3020 by subdividing the forward voltage for the plurality of LEDs 3020 mounted on each LED module 3010 described above. Therefore, each LED module 3010 has a connection structure that forms a parallel connection with another LED module 3010 that is connected to the same drive driver 3030.

  Referring to FIG. 70, the first LED module 3010a and the second LED module 3010b having a small voltage difference are connected to the first drive driver 3030a to form one connection structure, and the third LED module 3010c and the fourth LED module 3010d are The fifth LED module 3010e and the sixth LED module 3010f are connected to the second drive driver 3030b to form one connection structure. That is, at least two or more LED modules 3010 having a small voltage difference with each other can be integrally driven by one common drive driver 3030. As described above, according to the present embodiment, the total number of drive drivers can be reduced as compared with a conventional backlight unit that includes a drive driver for each LED module and drives the LEDs. Not only can the light unit be reduced in size and size, but also the number of electrical and electronic parts required for the backlight unit can be reduced. Furthermore, the reduction in the number of drive drivers makes it easier to control the entire drive driver to compensate for the light characteristics of the backlight unit, and has the effect of improving the image quality.

  On the other hand, FIGS. 73 and 74 show embodiments for various connection structures of the LED module 3010 and the drive driver 3030. As shown in FIG. 73, the first drive driver 3030a is connected to the first LED module 3010a and the fifth LED module 3010e to form one connection structure, and the second drive driver 3030b is connected to the second LED module 3010b and the sixth LED module 3010f. The third driving driver 3030c is connected to the third LED module 3010c and the fourth LED module 3010d to form one connection structure.

  In the embodiment shown in FIG. 74, the first LED module 3010a and the fourth LED module 3010d are connected to the first drive driver 3030a to form one connection structure, and the fifth LED module 3010e and the sixth LED module 3010f are the second drive driver 3030b. Are connected to each other to form one connection structure, and the second LED module 3010b and the third LED module 3010c are connected to the third drive driver 3030c to form one connection structure. The LED module 3010 electrically connected to each drive driver 3030 can have various combinations of connection structures, but is not limited thereto. The plurality of LED modules 3010 are electrically connected only between the LED modules 3010 sharing the drive driver 3030, and are electrically connected to the LED modules 3010 connected to the other drive drivers 3030. Not done.

  The surface light source device and the backlight unit according to the present embodiment described above may include an LED driving circuit that can be directly used with an AC power source without a conversion device that converts the DC power source into a DC power source. LED array devices can be included. The LED driving circuit and the LED array device will be described in detail with reference to FIGS.

  First, FIG. 75 shows an LED driving circuit according to an embodiment of the present invention. The LED driving circuit shown in FIG. 75 includes a ladder network LED circuit. That is, the ladder network LED circuit according to the present embodiment includes three first branches connected by first intermediate contacts (c1, c2) between the first and second contacts (a, b), and the first branch. And three second branches connected by second intermediate contacts (d1, d2) between the second contacts (a, b), and the LED driving circuit includes first and second intermediates in order. It has two intermediate branches connected between the contacts (c1 and d1, c2 and d2). Here, LED elements (3108, 3109, 3110, 3111, 3112, 3113, 3114, 3115) are arranged in the first and second branches and the intermediate branch, respectively.

  Said LED drive circuit has two current roofs (L1, L2) so that it may drive with a mutually different half cycle of alternating voltage. The first current roof (L1) includes LED elements (3108, 3109, 3110, 3111, 3112) connected in series so as to be driven in the first half cycle of the AC voltage. The second current roof (L2) includes LED elements (3113, 3111, 3114, 3109, 3115) connected in series so as to be driven in the second half cycle of the AC voltage. As described above, in the circuit operation in a state where the AC voltage is applied, the LED elements 3109 and 3111 can be driven in both directions.

  The LED arrangement in such a ladder network circuit will be described as follows when the order of the first and second branches and the intermediate branch from the first contact (a) is defined as m. be able to. The LED elements (3108, 3109, 3110, 3111, 3112, 3113, 3114, 3115) can be classified into first and second LED groups according to the period of driveable AC voltage. The first LED group is composed of the (2m-1) th first branch that is odd, all the intermediate branches, and the LEDs (3108, 3109, 3110, 3111, 3112) belonging to the even 2mth second branch. And are connected in series with each other. The second LED group is composed of a 2m-th first branch that is an even number, all intermediate branches, and LEDs (3113, 3111, 3114, 3109, 3115) that belong to the odd-numbered (2m-1) -th second branch. Are connected in series with each other so as to be in the opposite polarity direction to the first LED group.

  Accordingly, the first LED group forms a first current roof (L1) that is driven by a first half cycle of an AC voltage, and the second LED group is a second current that is driven by a second half cycle of the AC voltage. A roof (L2) can be formed. According to such driving, the LED elements 3109 and 3111 located in the intermediate branch and belonging to the first and second LED groups in common can operate continuously in the entire period of the AC voltage.

  In this way, in the LED drive circuit composed of eight LED elements (3108, 3109, 3110, 3111, 3112, 3113, 3114, 3115), the two LED elements 3110, 3114 are driven in the full cycle of the AC voltage. Therefore, it is possible to secure five LED elements (the number of drive LEDs as compared with the number of used LEDs: 62.5%) that are continuously emitted in an actual ladder network circuit. This is a numerical value that is an improvement over the 50% reverse polarity array or the bridge array (usually 60%) that are conventional AC driven LED arrays.

  The LED drive circuit according to the present embodiment is greatly different from the bridge structure in that the LED element 3109 and the LED element 3111 are not connected in series but connected in series. That is, in the LED drive circuit according to the present embodiment, since the LED elements 3110 and 3114 are inserted between the LED element 3109 and the LED element 3111, the LED element 3109 and the LED element 3111 are connected in series. Therefore, it becomes a ladder network structure that is fundamentally different from the bridge structure.

  In the LED driving circuit according to the present embodiment, the entire period of the AC voltage, that is, the connection of the LEDs that are all driven in both directions is inserted with the LED elements 3110 and 3114 and four intermediate contacts (c1, c2, d1, d2). Are connected in series. One roof is formed due to the structure of such LED array connection. However, in actual driving, the potential difference of each LED is different in the roof configured by the intermediate contact as described above, so that the current roof is not formed. It will operate in one serial form.

  In another embodiment of the present invention, when the roof connecting the first and second intermediate contacts is a single stack in the ladder network structure shown in FIG. Thus, various LED driving circuits can be provided. That is, the first and second intermediate contacts may each be configured with the same number of three or more, and the first and second branches may be the same number of four or more.

  FIG. 76 (a) shows, as an example of another embodiment of the present invention, an LED having four first and second intermediate contacts (c1, c2, c3, c4 and d1, d2, d3, d4). A drive circuit is shown. The LED driving circuit shown in FIG. 76 (a) includes four intermediate branches that sequentially connect the first and second intermediate contacts. Such a drive circuit can be understood as a ladder network with three bundles. In FIG. 76 (a), one LED element is arranged in each branch. Such an array of LED elements is arranged to have first and second current roofs that are driven with another half period of the alternating voltage. That is, in the first half cycle of the AC voltage, the LED elements are arranged in series so as to have a first current roof along A1-C1-B2-C2-A3-C3-B4-C4-A5. In the second half period, the LED elements are arranged in series so as to have a second current roof along B1-C1-A2-C2-B3-C3-A4-C4-B5.

  In the LED driving circuit according to the present embodiment, the four LED elements (C1, C2, C3, C4) that are located in the intermediate branch and commonly applied to the first and second current roofs have the full cycle of the AC voltage. Can operate continuously. In this way, in the LED drive circuit composed of a total of 14 LED elements, the four LED elements (C1, C2, C3, C4) can be driven in the full cycle of the AC voltage. Nine LED elements (LED use efficiency: about 64%) continuously emitted by the ladder network can be secured. In this embodiment, the effect of reducing the number of LEDs used can be expected to be greater than in the above-described embodiment.

  In the drive circuit shown in FIG. 75 and FIG. 76 (a), the first and second branches and the intermediate branch are illustrated as including one LED element. Each of the first and second branches and the intermediate branch may include a plurality of LED elements. However, in this case as well, a plurality of LED elements belonging to the same branch must be connected in series with each other. Particularly, when the number of LEDs in the intermediate branch is increased, the number of LEDs driven in both directions is relatively increased, so that the light emission efficiency with respect to the number of used LEDs can be greatly improved. Therefore, the number of LEDs consumed to obtain the light emission level can be reduced.

  The LED drive circuit shown in FIG. 76 (b) is a form in which two LED elements connected in series to each intermediate branch are arranged in the LED drive circuit shown in FIG. 76 (a). In the first half cycle of the AC voltage, the first current roof is along A1-C1-C1′-B2-C2-C2′-A3-C3-C3′-B4-C4-C4′-A5. The LED elements are arranged in series, and in the second half cycle of the AC voltage, the first along the B1-C1-C1′-A2-C2-C2′-B3-C3-C3′-A4-C4-C4′-B5. The LED elements are arranged in series so as to have a two-current roof. In the LED drive circuit according to the present embodiment, there are eight LED elements (C1, C1 ′, C2, C2 ′, C3, C3 ′, C4, C4 ′) belonging to the intermediate branch. That is, the LED elements (C1, C1 ′, C2, C2 ′, C3, C3 ′, C4, C4 ′) commonly applied to the first and second current roofs so as to continuously operate in the entire period of the AC voltage. Is twice as large as that of the LED driving circuit shown in FIG. As a result, in the LED drive circuit composed of a total of 18 LED elements, 8 LED elements (C1, C1 ′, C2, C2 ′, C3, C3 ′, C4, C4 ′) are all of the AC voltage. Since it can be driven in a cycle, 13 LED elements (LED use efficiency: about 72%) continuously emitted in an actual ladder network can be secured. In the present embodiment, the effect of reducing the number of LEDs used can be expected to be significantly improved as compared to the above-described embodiments.

  The LED drive circuit shown in FIG. 76 (c) is the same as the LED drive circuit shown in FIG. 76 (a) in the first first branch, the second second branch, and the third intermediate branch. In this embodiment, LED elements (A1 ′, B2 ′, C3 ′) connected in parallel are arranged. In the first half cycle of the AC voltage, it has a first current roof along (A1, A1 ')-C1- (B2, B2')-C2-A3- (C3, C3 ')-B4-C4-A5. Thus, the LED elements are arranged in series, and along the second half cycle of the AC voltage, along B1-C1--A2-C2--B3- (C3, C3 ')-A4-C4-C4'-B5 The LED elements are arranged in series so as to have a second current roof (however, the elements indicated in parentheses are connected in parallel to each other). Increasing the number of LED elements positioned in the intermediate branch increases the number of elements driven in both directions, which is advantageous in terms of improving LED usage efficiency. However, when only the numbers of the LED elements located in the intermediate branch are increased, the reverse voltage applied to the LED elements belonging to the first and second branches is increased, so that each LED element is an element of the same standard. In this case, the number of LEDs located in the intermediate branch is preferably selected as two or three LED elements.

  In a specific embodiment of the present invention, there are a plurality of the ladder network circuits, and the plurality of ladder network circuits are connected to the second contact of one ladder network circuit and the first contact of another ladder network circuit. Can be connected in series. Such an embodiment is shown in FIG.

  Referring to FIG. 77, the LED driving circuit has a structure in which two ladder nets are connected in series. That is, the second contact (b1) of the first ladder network circuit and the first contact (a2) of the second ladder network circuit are connected, and the first contact (a1) of the first ladder network circuit and the second ladder are connected. The second contact of the network circuit is a structure connected to the AC power supply terminal. In this embodiment, two LED elements connected in series to the first branch, the second branch, and the intermediate branch are arranged.

  In the case of the LED driving circuit shown in FIG. 77, in the first half cycle of the AC voltage, A1-A1′-C1-C1′-B2-B2′-C2-C2′-A3-A3 ′ (the first Ladder network circuit) -B4-B4'-C3-C3'-A5-A5'-C4-C4'-B6-B6 '(hereinafter, second ladder network circuit) so as to have a first current roof. The LED elements are arranged in series, and in the second half cycle of the AC voltage, B1-B1'-C1-C1'-A2-A2'-C2-C2'-B3-B3 '(above, the first ladder type) Network circuit) -A4-A4'-C3-C3'-B5-B5'-C4-C4'-A6-A6 '(hereinafter the second ladder network circuit) so as to have a second current roof. LED elements are arranged in series.

  In the LED drive circuit according to the present embodiment, there are eight LED elements (C1, C1 ′, C2, C2 ′, C3, C3 ′, C4, C4 ′) belonging to the intermediate branch. That is, the LED elements (C1, C1 ′, C2, C2 ′, C3, C3 ′, C4, C4 ′) commonly applied to the first and second current roofs so as to continuously operate in the entire period of the AC voltage. Is twice as large as that of the LED driving circuit shown in FIG. As described above, the LED array for AC driving having the ladder-type network structure can be applied in various forms.

  In another aspect of the present embodiment, the present invention can be realized as an LED array device having a plurality of LED elements in which the LED drive circuits having the various ladder-type network structures described above are implemented. That is, in the LED array device of the present embodiment, K (where K is an integer where K ≧ 3) first electrode elements are connected to the same polarity electrode between the first contact and the second contact. N (where n is an integer satisfying n ≧ 2) are connected side by side so as to have first intermediate contacts. L (where L is an integer satisfying L ≧ 3) second LED elements have n second intermediate contacts in which electrodes having the same polarity are connected between the first and second contacts. The electrodes having the polarity opposite to the electrode polarity of the first LED element connected to the first and second contacts are connected to the first and second contacts.

  In addition, M (where M is an integer where M ≧ n) third LED elements corresponding to the intermediate branch of the circuit described above are the same m-th (where m is the first contact point). To a positive integer that defines the procedure of the n first and second intermediate contacts, and the first and second intermediate contacts have polar electrodes opposite to the electrodes of the first and second LED elements, respectively. Connected. Each of the first and second LED elements may be positioned between the intermediate contacts. Similarly, the third LED elements may be connected one by one between the first and second intermediate contacts.

  If necessary, a plurality of the third LED elements may be connected between the at least one first and second intermediate contacts, and the third LED elements between the at least one first and second intermediate contacts may be connected in series with each other. They can be connected in parallel (see FIG. 76 (b) or 76 (c)).

  In order to explain the effect of reducing the number of LEDs used in the ladder network LED driving circuit according to the present embodiment, the difference in the number of LED elements required to satisfy a specific output condition using the same LED element is compared with other conventional ones. And an AC drive type LED circuit (bipolar circuit, bridge network circuit).

  FIG. 78A shows an LED drive circuit according to a conventional example, and FIGS. 78B and 78C show an LED drive circuit according to an example of the present invention.

  The LED drive circuit shown in FIG. 78 (a) is a reverse parallel circuit for normal AC drive, and LED elements 3130A and 3130B arranged in reverse parallel are arranged in series so as to have a plurality of bundles S. It is a connected structure. As shown in Table 1, even if the number of bundles is increased as a whole, the ratio of the number of LEDs that are continuously driven (LED use efficiency) is 50% compared to the number used.

  The LED drive circuit shown in FIG. 78 (b) is a bridge circuit and has a structure in which one LED element is arranged in each branch. Each bundle is composed of five LED elements (3140A, 3140B, 3140C, 3140D, 3140E), and can be connected by a plurality of bundles so as to have a predetermined output. As shown in Table 1, the use efficiency of such a bridge network LED circuit is 60% regardless of the number of bundles. This is because, unlike the anti-parallel arrangement of FIG. 78 (a), the LED elements 3140E arranged in the intermediate branch can be continuously driven in both directions.

  In the case of the ladder network LED driving circuit shown in FIG. 78 (c), the total number of LEDs used in the ladder network circuit having two bundles is 8 as described in FIG. 76 (a). The number of LEDs that are continuously driven is 5, which has a high usage efficiency of 62.5%. Further, as shown in Table 1, the ladder network LED driving circuit has a structure in which the ratio of the number of LEDs driven in both directions is increased by increasing the number of bundles, so that the LED usage efficiency is gradually increased.

  Therefore, when the output of nine LED elements is required, the antiparallel LED circuit shown in FIG. 78 (a) requires a total of 18 LED elements, and the bridge network LED circuit connects three bundles. A total of 15 LED elements are required. In contrast, in the ladder network LED circuit according to the present embodiment, three bundles can be connected to provide a predetermined amount of light (9 LED elements) with a total of 14 LEDs. The number of LED elements used can be greatly reduced.

  Such an improvement effect is further increased when the output specification is large. That is, when the output of 63 LED elements is required, the anti-parallel circuit and the bridge circuit require 126 and 105 respectively for the configuration of the AC drive circuit, but the ladder network LED circuit has 95. Since only one is used, 31 or 10 LED elements can be saved in preparation.

  This is because, in the case of a bridge LED circuit, a minimum of two or more LED elements are located in the current roof between LEDs that are driven in both directions in common, whereas in the case of a ladder network, the LED elements that are commonly used This is because a minimum of one LED element is sufficient during this period. That is, the minimum number of necessary LEDs among the LEDs that are used in both directions is less than that of the bridge network circuit. Therefore, the ladder network is generally larger than the bridge structure. This is because the number can be used in both directions.

  FIG. 79A shows an LED driving circuit according to another conventional example, and FIG. 79B shows an LED driving circuit according to another example.

  79 (a) and 79 (b) are similar to FIGS. 78 (b) and 78 (c), respectively, but two LED elements connected in series with each other are arranged in the intermediate branch. It is. That is, this is a case where the number of LED elements continuously driven in a single bundle is increased to the same level. The ladder-type LED driving circuit shown in FIG. 79 (b) can be understood with reference to the form shown in FIG. 76 (b).

  Therefore, when the output of 16 LED elements is required, the antiparallel LED circuit shown in FIG. 78 (a) requires a total of 32 LED elements, and the bridge shown in FIG. 79 (a). The network LED circuit requires a total of 24 LED elements by connecting four bundles. On the other hand, in the ladder network LED circuit according to the present embodiment, since a predetermined amount of light (16 LED elements) can be provided by a total of 22 LED elements, the number of LED elements used is more than that of the bridge LED circuit. Can be greatly reduced.

  Such an improvement effect is further increased when the output specification is large. That is, when the output of 52 LED elements is required, the antiparallel circuit and the bridge circuit are required to be 104 and 78 respectively for the configuration of the AC drive circuit. Since only 70 are used, 34 and 8 LED elements can be saved as compared with the prior art.

  Thus, according to the ladder network LED driving circuit, the number of LEDs used for the same output can be greatly reduced not only in the existing anti-parallel structure but also in the bridge structure under the conditions for AC driving.

  LED automatic illumination capable of reducing power consumption by automatically adjusting the brightness of an LED according to ambient brightness in a surface light source device and a backlight unit employing a light emitting device package according to various embodiments of the present invention. The apparatus will be described.

  FIG. 80 is a configuration diagram of the LED automatic illumination device. Referring to FIG. 80, the LED automatic illumination device according to the present embodiment includes a surrounding brightness detection unit 3200 that detects the surrounding brightness, and a detection voltage (Vd) generated by the detection of the surrounding brightness detection unit 3200. The illumination control unit 3300 that controls the drive according to the above and the illumination drive unit 3400 that generates the LED drive current by the drive control of the illumination control unit 3300 are included. Further, the LED automatic illumination device includes a plurality of LEDs, and may include an LED unit 3500 that is driven by a driving current from the illumination driving unit 3400.

  The ambient brightness detection unit 3200 receives external light with the sensitivity set by the sensitivity setting unit 3210 for setting the detection sensitivity for ambient brightness detection and the detection sensitivity set by the sensitivity setting unit 3210. A photo sensor unit 3220 for detecting the thickness. The photo sensor unit 3220 includes a collector connected to a power supply terminal that receives the operation power (Vcc), a base that receives external light, and an emitter connected to the sensitivity setting unit 3210. And a phototransistor (PT). The sensitivity setting unit 3210 may include a variable resistor that is connected to the emitter of the phototransistor (PT) and is adjustable by a user, and a resistor that is connected in series with the variable resistor.

  A specific operation will be described. The ambient brightness detection unit 3200 detects ambient brightness and outputs a detection voltage (Vd) to the illumination control unit 3300. For example, when the ambient brightness detection unit 3200 includes a sensitivity setting unit 3210 and a photosensor unit 3220, the sensitivity setting unit 3210 provides the ambient brightness detection detection sensitivity to the photosensor unit 3220. Can be set. The photo sensor unit 3220 can detect ambient brightness by receiving external light with the detection sensitivity set by the sensitivity setting unit 3210. At this time, the photo sensor unit 3220 includes a collector connected to a power supply terminal that receives the operating power (Vcc), a base that receives external light, and an emitter connected to the sensitivity setting unit 3210. In this case, the phototransistor (PT) is passed when receiving external light, and the current (I) is supplied from the operating power supply (Vcc) to the above-described power supply (Vcc). The phototransistor (PT) and the sensitivity setting unit 3210. That is, the current (I) is detected as the detection voltage (Vd) by the sensitivity setting unit 3210. At this time, the sensitivity setting unit 3210 is connected to the emitter of the phototransistor (PT). When the variable resistor and the resistor are adjustable by the user, the slope of the detection voltage (Vd) due to the flowing current (I) may change depending on the resistance value of the variable resistor.

  The illumination control unit 3300 includes an A / D converter 3310 that converts an analog detection voltage (Vd) generated by the detection of the ambient brightness detection unit 3200 into a digital detection voltage, and the A / D A microcomputer 3320 for controlling the driving according to the magnitude of the digital detection voltage (Vd) from the converter 3310 can be included. When the digital detection voltage (Vd) from the A / D converter 3310 is smaller than the preset first reference voltage, the microcomputer 3320 has the first reference voltage and the digital form. A drive current that is set to a magnitude of a difference voltage with respect to the detection voltage (Vd) is generated, and if the detection voltage (Vd) in the digital form is not smaller than the preset first reference voltage, illumination is performed. The driving can be stopped.

  A specific operation of the illumination control unit 3300 will be described. The illumination control unit 3300 drives the illumination drive unit 3400 according to the detection voltage (Vd) generated by the detection of the ambient brightness detection unit 3200. Control. For example, when the illumination control unit 3300 includes an A / D converter 3310 and a microcomputer 3320, the A / D converter 3310 detects an analog detection voltage (generated by the detection of the ambient brightness detection unit 3200 ( Vd) is converted into a digital detection voltage and output to the microcomputer 3320. The microcomputer 3320 can control driving according to the magnitude of the digital detection voltage (Vd) from the A / D converter 3310.

  The illumination drive unit 3400 generates an LED drive current based on the drive control of the illumination control unit 3300 and supplies the LED drive current to the LED unit 3500. Eventually, the drive current from the illumination drive unit 3400 generates a small drive current when the external light amount is large, and unlike this, a large drive current is generated when the external light amount is small. Accordingly, the LED unit 3500 can include a plurality of LEDs, and the plurality of LEDs are driven by a driving current from the illumination driving unit 3400. As described above, the present embodiment has an advantage that the brightness of the LED can be automatically adjusted according to the external light amount, and the power consumption can be reduced to the minimum.

  FIG. 81 is an operation flowchart of the LED automatic illumination device of this embodiment. In FIG. 81, S1 is a step of receiving an input of a detection voltage (Vd). S2 is a step of comparing the detection voltage (Vd) in digital form with the preset first reference voltage. In S3, when the digital detection voltage (Vd) is smaller than the preset first reference voltage, the difference between the first reference voltage and the digital detection voltage (Vd) is set to a predetermined voltage. This is a step of controlling the brightness of the illumination by generating a set drive current. In S4, when the detection voltage (Vd) in the digital form is not smaller than the preset first reference voltage, the illumination drive can be stopped. S5 is a step for determining whether or not the operation can be stopped. If the operation is not stopped at this step, the processes from S1 to S3 are repeated. If the operation is stopped, the entire process is terminated.

  80 and 81, the microcomputer 3320 receives the digital detection voltage (Vd) from the A / D converter 3310 (S1), and receives the A / D converter. The first reference voltage in which the digital detection voltage (Vd) from 3310 is already set is compared (S2), and the digital detection voltage (Vd) from the A / D converter 3310 is already set. When the voltage is smaller than the first reference voltage, a driving current that is preset to the magnitude of the voltage difference between the first reference voltage and the digital detection voltage (Vd) is generated to reduce the brightness of the illumination. Control is performed (S3), and when the detection voltage (Vd) in the digital form is not smaller than the preset first reference voltage, the illumination drive can be stopped (S4). On the other hand, the microcomputer 3320 determines whether or not the operation can be stopped. If the operation is not stopped, the above steps S1 to S3 are repeated. If the operation is stopped, the entire process is terminated (S5). .

  FIG. 82 is a graph showing the relationship between external illuminance and detection voltage according to this embodiment. FIG. 82 shows an external illuminance-detection voltage relationship graph for explaining the operation of the ambient brightness detection unit 3200 of the present embodiment. The external illuminance-detection voltage relationship graph shows that the detection voltage is an external illuminance. The higher the value, the higher the relationship. Referring to the external illuminance-detection voltage relationship graph shown in FIG. 82, it can be seen that the detection voltage in the ambient brightness detection unit 3200 is detected higher as the external illuminance is higher.

  FIG. 83 is a graph showing various external illuminance-detection voltage relationships according to sensitivity setting. FIG. 83 shows an example in which the slope of the relationship graph between the external illuminance and the detected voltage changes depending on the sensitivity setting in the sensitivity setting unit 3210 of the ambient brightness detection unit 3200. The three graphs shown in FIG. G1 is an external illuminance-detection voltage relationship graph having an intermediate slope, G2 is an external illuminance-detection voltage relationship graph having the largest slope, and G3 is an external illuminance-detection voltage having the smallest slope. It is a relationship graph.

  Referring to FIG. 83, when the variable resistance is adjusted by the sensitivity setting unit 3210 of the ambient brightness detection unit 3200 of the present embodiment and the sensitivity is set to be different from each other, like G1, G2, and G3 shown in FIG. The slopes of the external illuminance-detected voltage relationship graphs change from one another. For example, in the general general case, the sensitivity corresponding to the G1 graph is set, the sensitivity corresponding to the G2 graph is set when the external light amount is large and the change is large, and the sensitivity corresponding to the G3 graph is set when the external light amount is small and the change is small. Can be set.

  The vehicle headlight including the light emitting device according to the present embodiment and the light emitting device package including the light emitting device as a light source will be described with reference to FIGS.

  FIG. 84 is an exploded perspective view showing a vehicle headlight according to an embodiment, and FIG. 85 is a cross-sectional view of a structure in which the vehicle headlight shown in FIG. 84 is assembled.

  As shown in FIG. 84, a vehicle headlight 3600 according to an embodiment of the present invention includes a light emitting device package (3610, 3610-1, 3610-2, 3610-3), a reflection unit 3620, a lens unit 3630, a heat dissipation. A portion 3640 is included. The light emitting device package (3610, 3610-1, 3610-2, 3610-3) is mounted on the heat radiating unit 3640 and is electrically connected to an external power source (not shown), and emits light when power is supplied. Performs light source function.

  86 to 89, various structures of the light emitting device packages (3610, 3610-1, 3610-2, 3610-3) will be described in more detail. First, with reference to FIGS. 86 and 88, a light-emitting element package relating to a structure in which a resin layer contains a phosphor will be described.

  FIG. 86 (a) is a plan view showing an embodiment of the light emitting device package, FIG. 86 (b) is a cross-sectional view showing the light emitting device package of FIG. 86 (a), and FIG. FIG. 86D is a plan view showing a modification of the light emitting element chip mounted on the light emitting element package of FIG. 86A.

  FIG. 87A is a plan view showing another embodiment of the light emitting device package described above, and FIG. 87B is a cross-sectional view showing the light emitting device package of FIG. 87A. 87 (c) and 87 (d) are plan views showing modifications of the light emitting element chip mounted on the light emitting element package of FIG. 87 (a).

  As shown in FIGS. 86 and 87, the light emitting device packages 3610 and 3610-1 are electrically connected to each other by mounting at least one light emitting device chip 3612 and the light emitting device chip 3612 described above. The substrate 3611 includes one or more connection terminals 3613, and includes a phosphor, a light emitting element chip 3612, and a resin layer 3614 that covers and seals the connection terminals 3613. The light-emitting element chip 3612 is a kind of semiconductor element that is mounted on the upper surface of the substrate 3611 and emits light of a predetermined wavelength by an externally applied power source. FIG. 86A and FIG. b), and a plurality of light emitting element chips 3612 may be provided at the center of the substrate 3611 as shown in FIGS. 87 (a) and 87 (b). In this case, it is preferable that the light emitting element chip 3612 emits white light by being arrayed with a combination of a blue LED, a red LED, and a green LED. However, the present invention is not limited to this, and a single light emitting element chip 3612 ′ may be provided at the center of the substrate 3611 as shown in FIGS. 86 (c) and 87 (c). At this time, the light emitting element chip 3612 ′ is preferably a blue LED or a UV LED, and emits white light through a phosphor of a resin layer 3614 described later.

  Further, as shown in FIGS. 86 (d) and 87 (d), a light emitting element having a shorter length on both sides of the light emitting element chip 3612 '' having a long length provided at the center of the substrate 3611. Tip 3612 can also be provided in a symmetric configuration. In this case, the light emitting element chip 3612 '' provided in the central portion may have a length 1.5 to 2 times longer than the light emitting element chip 3612 provided on both sides thereof, and is a green LED. However, it is not limited to this. The light emitting device chip 3612 is electrically connected to the connection terminal 3613 that is patterned on the upper surface of the substrate 3611 by a wire bonding method through a metal wire 3619.

  86A and 86B showing a light emitting device package 3610 according to an embodiment of the present invention, the substrate 3611 includes the light emitting device chip 3612 and the connecting terminal 3613 on the upper surface. And a cavity 3618 that forms a reflective surface 3616 along an inner peripheral surface that is inclined downward toward the light emitting element chip 3612 and the connection terminal 3613. The cavity 3618 is provided by forming the upper surface of the substrate 3611 with a predetermined size by laser or etching, or by applying a resin 3617 along the edge of the upper surface of the substrate 3611. The reflective surface 3616 can be formed in a protruding manner by molding at a height of 5 mm. Preferably, for the purpose of increasing the reflectance of the reflective surface 3616, a reflective film having a high reflectance may be further provided on the surface of the reflective surface 3616.

  The cavity 3618 is filled with a resin layer 3614 containing a phosphor, and covers the upper surface of the substrate 3611 together with the light emitting element chip 3612, the metal wire 3619, and the connection terminal 3613 to be sealed. Thus, the light emitting element chip 3612 and the like disposed in the cavity 3618 are protected. At this time, in the light emitting device package 3610, the upper surface and the side surface of the light emitting device chip 3612 are sealed by the resin layer 3614 including the space between the light emitting device chips 3612.

  Accordingly, by applying the phosphor only to the upper surface of the light emitting device chips that are continuously arranged in the conventional light emitting device package, the light irradiated by the spacing between the chips is discontinuously separated instead of continuously. Problem that can be seen.

  On the other hand, as shown in FIGS. 87 (a) and 87 (b) showing a light emitting device package 3600-1 according to another embodiment, the resin layer 3614 has a predetermined size on the flat upper surface of the substrate 3611. The light emitting element chip 3612 and the connection terminal 3613 are integrally covered and sealed. Similarly, in this case, the light emitting element package 3600-1 includes the space between the light emitting element chips 3612 and the upper surface and side surfaces of the light emitting element chips 3612 are sealed by the resin layer 3614.

  Next, a light emitting device package relating to a structure including a fluorescent layer that is formed on the resin layer and includes a phosphor and converts the wavelength of light emitted from the light emitting device chip will be described with reference to FIGS. 88 and 89. To do. FIG. 88 (a) is a plan view showing another embodiment of the light emitting device package shown in FIG. 86 (a), and FIG. 88 (b) is a cross section showing the light emitting device package of FIG. 88 (a). FIG. 88 (c) is a cross-sectional view showing a modification of FIG. 88 (b).

  The light emitting device package 3610-2 shown in FIG. 88 has substantially the same configuration as the embodiment of FIG. However, since there is a difference in that a fluorescent layer containing a phosphor is provided on the upper portion of the resin layer, the description of the same part as the embodiment of FIG. 86 is omitted, and a configuration different from the embodiment of FIG. Only detailed.

  As shown in FIG. 88, the resin layer 3614 is filled in the cavity 3618 and integrally covers and seals the upper surface of the substrate 3611 together with the light emitting element chip 3612, the metal wire 3619, and the connection terminal 3613. Does not contain a phosphor. However, as in the embodiment of FIG. 86, the resin layer 3614 includes the upper surface and the side surface of the light emitting element chip 3612 together with the connection terminal 3613 so as to include the space between the light emitting element chips 3612. It is the same in terms of sealing. The resin layer 3614 includes a fluorescent layer 3615 that contains a phosphor in the upper portion and converts the wavelength of light emitted from the light emitting element chip 3612. The fluorescent layer 3615 is provided on the resin layer 3614. However, the fluorescent layer 3615 may be applied to the outer surface of the resin layer 3614 and attached to the outer surface of the resin layer 3614 in a layer form. May be provided. In this case, the fluorescent layer 3615 is preferably provided by laminating one or more layers.

  As shown in FIG. 88 (b), phosphors are dispersed and contained in the phosphor layer 3615 to convert the wavelength of light. The phosphors are blue, green, red, and red. At least one phosphor among yellow phosphors may be mixed and contained. In addition, as shown in FIG. 88 (c), in the case of being laminated in a multilayer structure (in the drawing, a structure laminated on three floors is shown, but it is not limited to this), the above-described laminated fluorescent layer All 3615 can contain the same phosphor or different phosphors for each layer. The fluorescent layers 3615 to be stacked are preferably stacked in order according to the length of the wavelength so that the short-wavelength fluorescent layer is located at the top and the long-wavelength fluorescent layer is located at the bottom.

  For example, when the light-emitting element chip 3612 is a UV light-emitting element chip, the first fluorescent layer 3615′-1 formed on the light-emitting element chip 3612 is made of phosphor and resin that emits red light R. It can be mixed. As the phosphor that emits the red light R, a fluorescent material that is excited by ultraviolet rays and emits light having an emission peak in the range of about 600 nm to 700 nm can be used. The second fluorescent layer 3615′-2 may be stacked on the first fluorescent layer 3615′-1, and may be a mixture of a phosphor that emits green light G and a resin. As the phosphor that emits green light, a fluorescent substance that is excited by ultraviolet rays and emits light having a wavelength in the range of 500 nm to 550 nm can be used. The third fluorescent layer 3615′-3 may be stacked on the second fluorescent layer 3615′-2, and may be a mixture of a phosphor that emits blue light B and a resin. As the phosphor that emits blue light, a fluorescent material that is excited by ultraviolet rays and emits light having a wavelength in the range of 420 nm to 480 nm can be used.

  The ultraviolet rays emitted from the UV light emitting element chip by the above-described configuration were contained in the first fluorescent layer 3615′-1, the second fluorescent layer 3615′-2, and the third fluorescent layer 3615′-3. Different types of phosphors are excited. As a result, red light R, green light G, and blue light B are emitted from each fluorescent layer, and the light of these three hues is combined to form white light W. In particular, a fluorescent layer for converting ultraviolet light into fluorescence is formed of multiple layers, that is, three layers, and the first fluorescent layer 3615′-1 that emits light having the longest wavelength, that is, red light R, is used as a light emitting element chip. First, a second fluorescent layer 3615′-2 and a third fluorescent layer 3615′-3 that emit light having a shorter wavelength, that is, green light G and blue light B, are sequentially stacked on 3612. To do.

  Since the first fluorescent layer 3615′-1 containing the phosphor that emits the red light R having the lowest light conversion efficiency is positioned closest to the light emitting element chip 3612, the light in the first fluorescent layer can be obtained. The conversion efficiency becomes relatively high, which can improve the overall light conversion efficiency of the light emitting device chip 3612.

  If the light-emitting element chip 3612 is a light-emitting element chip that emits blue light B having a wavelength in the range of 420 nm to 480 nm as excitation light, the first fluorescence formed on the light-emitting element chip 3612 is used. The layer 3615′-1 is made of a mixture of a phosphor that emits red light R and a resin, and the second fluorescent layer 3615′-2 and the third fluorescent layer stacked on the first fluorescent layer 3615′-1. The layer 3615′-3 is formed by mixing a phosphor that emits green light G or yellow light Y into a resin.

  With such a configuration, the blue light B emitted from the light emitting element chip 3612 excites the phosphor contained in the first fluorescent layer 3615′-1 to emit the red light R, and the second light The phosphors contained in the fluorescent layer 3615′-2 and the third fluorescent layer 3615′-3 are excited to emit green light G or yellow light Y. As described above, the red light R, the green light G (or the yellow light Y) emitted from the multilayer fluorescent layer, and the blue light B generated by the light emitting element chip 3612 are combined to form the white light W.

  On the other hand, FIG. 89 (a) is a plan view showing another embodiment of the light emitting device package shown in FIG. 87 (a), and FIG. 89 (b) shows the light emitting device package of FIG. 89 (a). FIG. 89 (c) is a cross-sectional view showing a modification of FIG. 89 (b).

  The light emitting device package 3610-3 shown in FIG. 89 has substantially the same configuration as the embodiment of FIG. However, since there is a difference in that a fluorescent layer containing a phosphor is provided on the outer surface of the resin layer, the description of the same part as that of the embodiment of FIG. Only detailed.

  As shown in FIG. 89, the substrate 3611 is provided on a flat upper surface, and the upper surface of the substrate 3611 is integrally covered and sealed together with the light emitting element chip 3612, the metal wire 3619, and the connection terminal 3613. The resin layer 3614 does not contain a phosphor. Such a resin layer 3614 is the same as the embodiment of FIG. 75 in that the phosphor is not contained in the phosphor layer 3615 provided on the resin layer 3614 and is contained in the phosphor layer 3615. .

  That is, as shown in FIG. 89B, the phosphor contained in the phosphor layer 3615 contains a mixture of at least one phosphor among blue, green, red and yellow phosphors. be able to. In addition, in the case of stacking with a multilayer structure (a structure in which three layers are stacked in the drawing is shown, but not limited to this) as shown in FIG. All 3615 can contain the same phosphor or different phosphors for each layer.

  The fluorescent layers 3615 to be stacked can be sequentially stacked according to the length of the wavelength so that the short wavelength fluorescent layer is located on the upper side and the long wavelength fluorescent layer is located on the lower side. The specific structure of the fluorescent layer 3615 is substantially the same as the fluorescent layer 3615 shown in FIGS. 88B and 88C, and a specific description thereof will be omitted.

  The heat radiating part 3640 includes a heat sink 3641 and a cooling fan 3642. The light emitting device packages (3610, 3610-1, 3610-2, 3610-3) are provided on the upper side, and the light emitting device package (3610) is provided. , 3610-1, 3610-2, 3610-3) is released to the outside.

  Specifically, the heat sink 3641 has the light emitting device package (3610, 3610-1, 3610-2, 3610-3) mounted on the upper surface, and the light emitting device package (3610, 3610-1, 3610). The high-temperature heat generated in −2, 3610-3) is released to the outside. At this time, a plurality of grooves can be formed on the lower surface so as to have a large surface area. The cooling fan 3642 can be mounted on the lower side of the heat sink 3641 to increase the heat release efficiency of the heat sink 3641.

  The reflection part 3620 is provided on the light emitting element package (3610, 3610-1, 3610-2, 3610-3) and the heat radiating part 3640, and the light emitting element package (3610, 3610-1, The light emitted from 3610-2, 3610-3) is guided and reflected. As shown in FIGS. 84 and 85, the reflection part 3620 has a dome-shaped cross section, guides the light emitted from the light emitting element chip 3612 toward the front of the automobile, and the front is opened. Thus, the reflected light is emitted to the outside.

  The vehicle headlight 3600 according to the embodiment further includes a housing 3650 that fixes and supports the heat radiating portion 3640 and the reflecting portion 3620. Specifically, the housing 3650 is formed through a central hole 3653 for mounting and mounting the heat radiating part 3640 on one surface, and is integrally connected to the surface and bent in a right angle direction. The reflection part 3620 is formed through the front hole 3652 to be fixed to the upper side of the light emitting device package (3610, 3610-1, 3610-2, 3610-3) on the other surface. .

  Accordingly, the reflection part 3620 is fixed to the housing 3650 so that the open front of the reflection part 3620 corresponds to the front hole 3652, and the light reflected through the reflection part 3620 is The light is emitted to the outside through the front hole 3652.

  The lens unit 3630 includes a hollow guide 3632 and a lens 3361 that diverges the light reflected and emitted through the reflection unit 3620 to the outside. Specifically, the guide 3632 is mounted along the front hole 3652 of the housing 3650, and guides the light that passes through the front hole 3652 by being reflected through the reflector 3620 and forward. The guide 3632 is a plastic injection product that has a hollow cylindrical structure so that the lens 3631 is accommodated therein, and is formed through injection molding.

  The lens 3631 is mounted in front of the guide 3632, and is preferably formed of a transparent material that refracts and disperses light toward the front of the automobile.

The lighting devices such as the backlight unit and the vehicle headlight according to the above-described embodiments employ the light emitting device packages according to the first to thirteenth examples. 11 is an inorganic compound represented by the composition formula (Sr, M) 2 SiO 4−x N y : Eu, wherein M is at least one monovalent or divalent element, and 0 < A wavelength conversion unit or resin containing at least a red phosphor that satisfies x <4, y = 2x / 3, absorbs light emitted from the light emitting diode chip, and emits light having an emission peak in the range of about 600 nm to 700 nm. A packaging part is provided.

  The present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Accordingly, it is obvious to those skilled in the art that various forms of substitution, modification, and change can be made without departing from the technical idea described in the claims, and this is also obvious to the appended claims. It belongs to the technical idea described in the scope.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in said embodiment. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

  10 body, 11 case, 20 light emitting element, 100 light emitting element, 101 Si-Al alloy substrate, 102 bonding metal layer, 103 reflective metal layer, 104 p-type semiconductor layer, 105 active layer, 106 n-type semiconductor layer, 107 n Side electrode, 110 seed metal layer, 120 protective layer, 122 conductive layer, 123 contact metal layer, 150 sapphire substrate, 200 light emitting element, 210 conductive substrate, 220 first electrode layer, 230 insulating layer, 240 second electrode layer, 245 Exposed region, 247 Electrode pad portion, 250 Second semiconductor layer, 260 Active layer, 270 First semiconductor layer, 280 Contact hole, 290 Contact region, 300 Light emitting element, 310 Conductive substrate, 320 First electrode layer, 330 Insulation Layer, 340 second electrode layer, 345 electrical connection part, 347 electrode pad part, 350 Second semiconductor layer, 360 active layer, 370 first semiconductor layer, 380 contact hole, 390 contact region, 401 chip die, 402 bonding pad, 403 wavelength conversion unit, 404 submount, 410 light emitting element, 420 lead frame, 421 lead frame 425 Bonding wire, 500 light emitting element, 501 light emitting diode chip, 502 wavelength conversion unit, 503 second electrode, 504 second electrical connection unit, 505 substrate, 600 light emitting element, 601 light emitting diode chip, 602 wavelength conversion unit, 603 first 2 electrode, 604 2nd electrical connection part, 607 resin part, 700 light emitting element, 701 light emitting diode chip, 702 wavelength conversion part, 703 2nd electrode, 704 2nd electrical connection part, 706 underfill resin part, 801 light emitting element 810 UV light emitting diode chip, 820 multilayer fluorescent layer, 821 third fluorescent layer, 822 third fluorescent layer, 823 third fluorescent layer, 900 light emitting device package, 910 package body, 920 lead frame, 930 light emitting device, 940 bonding Wire, 950 Resin wrapping part, 960 phosphor, 970 reflective cup, 1003 wire, 1005 substrate, 1006 casing, 1007 metal conductor, 1010 UV light emitting diode chip, 1020 multilayer phosphor layer, 1021 third phosphor layer, 1022 third phosphor layer 1,023 3rd fluorescent layer, 1110 UV light emitting diode chip, 1120 multilayer fluorescent layer, 1121 1st fluorescent layer, 1122 second fluorescent layer, 1210 light emitting diode chip, 1220 multilayer fluorescent layer, 1221 1st fluorescent layer, 1222 Second fluorescent layer, 1301 blue light source, 1302 blue light, 1304 green light, 1305 green light, 1306 red light, 1307 red light, 1308 white light, 1309 observer, 1330 phosphor, 1331 first phosphor, 1332 second Phosphor, 1400 light emitting device package, 1431 package substrate, 1432 lead frame, 1435 light emitting diode chip, 1436 low refractive index region, 1437 high refractive index layer, 1438 wavelength conversion layer, 1439 phosphor, 1447 high refractive index layer, 1540 light emission Device package, 1541 Package substrate, 1542 Lead frame, 1545 Light emitting diode chip, 1546 Low refractive index region, 1547 High refractive index layer, 1548 Wavelength conversion layer, 1549 Phosphor, 1600 Light emitting device package, 1651 Cage substrate, 1652 lead frame, 1653 conductive via hole, 1654 connection pad, 1655 light emitting diode, 1656 low refractive index region, 1657 high refractive index layer, 1658 wavelength conversion layer, 1659 phosphor, 1700 light emitting device package, 1761 package substrate, 1762 Lead frame, 1765 LED chip, 1766 low refractive index region, 1767 high refractive index layer, 1768 wavelength conversion layer, 1769 phosphor, 1800 light emitting device package, 1810 body, 1811 cavity, 1812 mounting portion, 1814 main terminal, 1815 Main terminal, 1820 Light emitting element, 1830 Wavelength conversion unit, 1831 Fluid storage unit, 1832 Transparent fluid, 1833 Fluorescent substance, 1840 Control unit, 1841 Reservoir, 1842 Tutor, 1844 auxiliary terminal, 1845 auxiliary terminal, 1900 surface light source device, 1901 light emitting module, 1903 light emitting element, 1904 connector, 2000 surface light source device, 2001 4th light emitting module, 2003 light emitting element, 2004 connector, 2100 surface light source device, 2101 Light emitting module, 2103 light emitting element, 2104 connector, 2200 surface light source device, 2201 light emitting module, 2203 light emitting element, 2204 connector, 2300 surface light source device, 2400 backlight unit, 2401 substrate, 2402 light emitting element, 2411 reflecting layer, 2413 side wall, 2414 Optical sheet, 2500 Surface light source device, 2510 Lower frame, 2520 Light emitting element package, 2530 Light guide plate, 2540 Optical sheet, 2550 Liquid crystal panel, 2600 substrate, 2601 LED package, 2602 flat light guide plate, 2604 LED package, 2632 flat light guide plate, 2635 flat light guide plate, 2700 flat light guide plate, 2701 light incident portion, 2702 tip portion, 2703 prism shape , 2704 Outgoing surface, 2810 Lower cover, 2811 Fastening part, 2820 Light guide plate, 2821 Through hole, 2830 Light source device, 2831 LED package, 2832 Substrate, 2840 Fixing means, 2841 Head, 2842 Body, 2850 Reflecting member, 2851 Through Part, 2860 optical member, 2910 lower cover, 2920 light guide plate, 2930 LED light source, 2931 substrate, 2932 LED package, 2933 package body, 2935 LED chip, 2936 resin packaging part 2940 Fixing means, 3000 backlight unit, 3010 LED module, 3020 LED, 3030 drive driver, 3040 frame, 3050 light guide plate, 3109 LED element, 3110 LED element, 3111 LED element, 3114 LED element, 3130 LED element, 3140 LED element 3200 detector, 3210 sensitivity setting unit, 3220 photo sensor unit, 3300 illumination control unit, 3310 A / D converter, 3320 microcomputer, 3361 lens, 3400 illumination drive unit, 3500 LED unit, 3600 vehicle headlight, 3610 light emitting element Package, 3611 Substrate, 3612 Light emitting element chip, 3613 Connection terminal, 3614 Resin layer, 3615 Fluorescent layer, 3616 Reflecting surface, 3617 Resin, 36 8 cavity, 3619 metal wire, 3620 reflecting section, 3630 a lens unit, 3631 a lens, 3632 guide, 3640 heat radiating portion, 3641 heat sink, 3642 cooling fan, 3650 housing, 3652 front hall, 3653 Center Hall

Claims (13)

  1. (Sr, M) 2 SiO 4 -x N y: comprising an inorganic compound represented by a composition formula of Eu, the M is a metal element, Ri 0 <x <4, y = 2x / 3 der, wherein A red phosphor characterized in that M contains at least one element selected from the group consisting of Mg, Ga, Ba, Li, Na, K, Rb and Cs .
  2. 2. The red phosphor according to claim 1, which has an emission peak in a wavelength band of 600 nm to 700 nm with a blue or ultraviolet wavelength region as an excitation source.
  3. Wherein x is a red phosphor according to claim 1 or 2, characterized in that satisfies the condition 0.15 ≦ x ≦ 3.
  4. Some of Si in the composition formula is B, Al, Ga, In, Ti, Zr, Gf, substituted with at least one element selected from a group consisting of Sn and Pb, wherein Rukoto The red phosphor according to any one of claims 1 to 3 .
  5. The red phosphor according to any one of claims 1 to 4, wherein the red phosphor further contains Mn.
  6. Wherein comprises a mixture of inorganic compounds and different crystal phases Moreover, the red phosphor according to any one of claims 1 to 5 content of the inorganic compound is characterized in that at least 50 mass%.
  7. The red phosphor according to any one of claims 1 to 6, wherein the crystal structure of the red phosphor is orthorhombic.
  8. Mixing at least one of Sr-containing compounds and M-containing compounds, Eu-containing compounds, Si-containing oxides and Si-containing nitrides to form a mixture; and
    Calcining the mixture to obtain an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4 -xN y : Eu, wherein M is Mg, Ga, Ba, Li, A method for producing a red phosphor , comprising at least one element selected from the group consisting of Na, K, Rb and Cs , wherein 0 <x <4 and y = 2x / 3.
  9. 9. The method for producing a red phosphor according to claim 8 , wherein the step of mixing the raw material further mixes manganese carbonate.
  10. Step includes a characteristic B, Al, Ga, In, Ti, Zr, Gf, further admixing a compound of at least one element selected from a group consisting of Sn and Pb of mixing the raw material The method for producing a red phosphor according to claim 8 or 9 .
  11. A light emitting device that emits excitation light;
    A wavelength converter that absorbs the excitation light and emits visible light, and
    The wavelength conversion unit includes at least a red phosphor including an inorganic compound represented by a composition formula of (Sr, M) 2 SiO 4−x N y : Eu , and 0 <x <4 and y = 2x / 3 Ah is, the M light-emitting device package, wherein Mg, Ga, Ba, Li, Na, K, that Ru least one element der selected from the group consisting of Rb and Cs.
  12. The light emitting device package according to claim 11 , wherein the light emitting device is a blue light emitting diode, further includes a green phosphor or a yellow phosphor, and the final output light of the light emitting device package is white light.
  13. A substrate,
    A plurality of light sources mounted on the substrate;
    A diffusion sheet that is disposed on top of the plurality of light sources and uniformly diffuses light incident from the plurality of light sources, and
    The plurality of light sources include a light emitting element that emits excitation light, and a wavelength conversion unit that absorbs the excitation light and emits visible light, and the wavelength conversion unit includes (Sr, M) 2 SiO 4− x N y: at least includes a red phosphor having an inorganic compound represented by a composition formula of Eu, 0 <x <Ri 4, y = 2x / 3 der, wherein M is, Mg, Ga, Ba, Li, Na, K, lighting devices you characterized in that it comprises at least one element selected from the group consisting of Rb and Cs.
JP2010237961A 2009-10-23 2010-10-22 Red phosphor, method for manufacturing red phosphor, light emitting device package, and lighting device Active JP5678303B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020090101439A KR101565988B1 (en) 2009-10-23 2009-10-23 Red phosphor Method for preparing the same Light emitting device package and Lighting apparatus using the Red Phosphor
KR10-2009-0101439 2009-10-23

Publications (3)

Publication Number Publication Date
JP2011089121A JP2011089121A (en) 2011-05-06
JP2011089121A5 JP2011089121A5 (en) 2013-12-05
JP5678303B2 true JP5678303B2 (en) 2015-03-04

Family

ID=43216492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010237961A Active JP5678303B2 (en) 2009-10-23 2010-10-22 Red phosphor, method for manufacturing red phosphor, light emitting device package, and lighting device

Country Status (6)

Country Link
US (2) US8652357B2 (en)
EP (2) EP2530133B1 (en)
JP (1) JP5678303B2 (en)
KR (1) KR101565988B1 (en)
CN (1) CN102041002A (en)
TW (1) TWI414585B (en)

Families Citing this family (271)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009032711A1 (en) * 2009-07-11 2011-01-20 Merck Patent Gmbh Co-doped silicooxynitrides
KR101034054B1 (en) * 2009-10-22 2011-05-12 엘지이노텍 주식회사 Light emitting device package and method for fabricating the same
KR101717668B1 (en) * 2010-03-26 2017-03-17 삼성전자주식회사 Complex crystal phosphor, light emitting device, display apparatus and illumination apparatus
CN102559177B (en) * 2010-12-28 2014-09-03 北京宇极科技发展有限公司 Nitrogen oxides luminescent material and preparation method thereof and lighting source made of same
KR101214234B1 (en) * 2011-02-14 2012-12-20 삼성전자주식회사 Phosphor and method for preparing the same
US8754440B2 (en) * 2011-03-22 2014-06-17 Tsmc Solid State Lighting Ltd. Light-emitting diode (LED) package systems and methods of making the same
JP2012199497A (en) * 2011-03-23 2012-10-18 Panasonic Corp Light emitting device
JP5968674B2 (en) * 2011-05-13 2016-08-10 エルジー イノテック カンパニー リミテッド Light emitting device package and ultraviolet lamp provided with the same
KR101793518B1 (en) * 2011-05-19 2017-11-03 삼성전자주식회사 Red phosphor and light emitting device comprising the red phosphor
KR20120134375A (en) * 2011-06-02 2012-12-12 삼성전자주식회사 Light emitting diode and manufacturing method of the same
JP6004747B2 (en) * 2011-06-28 2016-10-12 株式会社小糸製作所 Light emitting module
US8497146B2 (en) * 2011-08-25 2013-07-30 Micron Technology, Inc. Vertical solid-state transducers having backside terminals and associated systems and methods
JPWO2013038649A1 (en) * 2011-09-13 2015-03-23 株式会社小糸製作所 Light emitting module
WO2013038953A1 (en) * 2011-09-14 2013-03-21 エムテックスマート株式会社 Led manufacturing method, led manufacturing device, and led
KR101866228B1 (en) * 2011-09-21 2018-06-11 엘지이노텍 주식회사 Oxynitride phosphor, and light-emitting device package comprising the same
JP2013072905A (en) * 2011-09-26 2013-04-22 Toshiba Corp Backlight for liquid crystal display
WO2013068878A1 (en) * 2011-11-07 2013-05-16 Koninklijke Philips Electronics N.V. Improved p-contact with more uniform injection and lower optical loss
KR101877423B1 (en) * 2011-11-28 2018-07-11 엘지이노텍 주식회사 Oxynitride phosphor, and light-emitting device package comprising the same
TWI473306B (en) * 2011-12-07 2015-02-11
KR101886714B1 (en) * 2011-12-13 2018-08-08 엘지이노텍 주식회사 Oxynitride phosphor, and light-emitting device package comprising the same
US8876334B2 (en) * 2012-01-16 2014-11-04 Paragon Semiconductor Lighting Technology Co., Ltd. Light-mixing multichip package structure
WO2013123128A1 (en) * 2012-02-17 2013-08-22 Intematix Corporation Solid-state lamps with improved emission efficiency and photoluminescence wavelength conversion components therefor
EP2637224B1 (en) * 2012-03-09 2019-04-03 Panasonic Intellectual Property Management Co., Ltd. Light emitting device, illumination apparatus and system using same
JP2013197530A (en) * 2012-03-22 2013-09-30 Sharp Corp Light source, light emitting device, light source for backlight, display device, and manufacturing method of light source
US9252338B2 (en) 2012-04-26 2016-02-02 Intematix Corporation Methods and apparatus for implementing color consistency in remote wavelength conversion
US20140042470A1 (en) * 2012-08-09 2014-02-13 Epistar Corporation Method of making light emitting device and light emitting device made thereof
TWI497167B (en) * 2012-09-24 2015-08-21 Au Optronics Corp Direct-type backlight module and diffuser structure
JP6074703B2 (en) * 2012-12-20 2017-02-08 パナソニックIpマネジメント株式会社 LED lighting device and LED light emitting module
KR20140099399A (en) * 2013-02-01 2014-08-12 삼성전자주식회사 Light source module and lighting device having the same
US9565782B2 (en) 2013-02-15 2017-02-07 Ecosense Lighting Inc. Field replaceable power supply cartridge
DE102013105056A1 (en) * 2013-05-16 2014-11-20 Osram Opto Semiconductors Gmbh Process for the preparation of a phosphor, phosphor and optoelectronic component
EP3001466B1 (en) * 2013-05-23 2019-07-03 LG Innotek Co., Ltd. Light-emitting module
KR20150025231A (en) * 2013-08-28 2015-03-10 서울반도체 주식회사 Light source module and manufacturing method thereof, backlight unit
US9142733B2 (en) * 2013-09-03 2015-09-22 Panasonic Intellectual Property Management Co., Ltd. Light source device including a high energy light source and a wavelength conversion member, illuminating device comprising the same, and vehicle
US9682651B2 (en) 2013-11-21 2017-06-20 Ford Global Technologies, Llc Vehicle lighting system with improved substrate
US9440579B2 (en) 2013-11-21 2016-09-13 Ford Global Technologies, Llc Photoluminescent step handle
US9586518B2 (en) 2013-11-21 2017-03-07 Ford Global Technologies, Llc Luminescent grille bar assembly
US9487136B2 (en) 2013-11-21 2016-11-08 Ford Global Technologies, Llc System and method to locate vehicle equipment
US9487126B2 (en) 2013-11-21 2016-11-08 Ford Global Technologies, Llc Photoluminescent puddle lamp
US9583968B2 (en) 2013-11-21 2017-02-28 Ford Global Technologies, Llc Photoluminescent disinfecting and charging bin
US9393903B2 (en) 2013-11-21 2016-07-19 Ford Global Technologies, Llc Photoluminescent engine compartment lighting
US9796325B2 (en) 2013-11-21 2017-10-24 Ford Global Technologies, Llc Exterior light system for a vehicle
US9464886B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Luminescent hitch angle detection component
US9387802B2 (en) 2013-11-21 2016-07-12 Ford Global Technologies, Llc Photoluminescent power distribution box
US9931991B2 (en) 2013-11-21 2018-04-03 Ford Global Technologies, Llc Rotating garment hook
US9487128B2 (en) 2013-11-21 2016-11-08 Ford Global Technologies, Llc Illuminating running board
US9527438B2 (en) 2013-11-21 2016-12-27 Ford Global Technologies, Llc Photoluminescent blind spot warning indicator
US9573517B2 (en) 2013-11-21 2017-02-21 Ford Global Technologies, Llc Door illumination and warning system
US9905743B2 (en) 2013-11-21 2018-02-27 Ford Global Technologies, Llc Printed LED heat sink double lock
US9452708B2 (en) 2013-11-21 2016-09-27 Ford Global Technologies, Llc Vehicle badge
US9533613B2 (en) 2013-11-21 2017-01-03 Ford Global Technologies, Llc Photoluminescent fuel filler door
US9315145B2 (en) 2013-11-21 2016-04-19 Ford Global Technologies, Llc Photoluminescent tailgate and step
US9809160B2 (en) 2013-11-21 2017-11-07 Ford Global Technologies, Llc Tailgate illumination system
US9493113B2 (en) 2013-11-21 2016-11-15 Ford Global Technologies, Llc Photoluminescent cargo area illumination
US9463739B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Sun visor with photoluminescent structure
US9399427B2 (en) 2013-11-21 2016-07-26 Ford Global Technologies, Llc Photoluminescent device holder
US9463736B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Illuminated steering assembly
US9902320B2 (en) 2013-11-21 2018-02-27 Ford Global Technologies, Llc Photoluminescent color changing dome map lamp
US9682649B2 (en) 2013-11-21 2017-06-20 Ford Global Technologies, Inc. Photoluminescent winch apparatus
US10041650B2 (en) 2013-11-21 2018-08-07 Ford Global Technologies, Llc Illuminated instrument panel storage compartment
US9649877B2 (en) 2013-11-21 2017-05-16 Ford Global Technologies, Llc Vehicle light system with illuminating wheel assembly
US9789810B2 (en) 2013-11-21 2017-10-17 Ford Global Technologies, Llc Photoluminescent vehicle panel
US9539941B2 (en) 2013-11-21 2017-01-10 Ford Global Technologies, Llc Photoluminescent cupholder illumination
US9499113B2 (en) 2013-11-21 2016-11-22 Ford Global Technologies, Llc Luminescent grille bar assembly
US9495040B2 (en) 2013-11-21 2016-11-15 Ford Global Technologies, Llc Selectively visible user interface
US9371033B2 (en) 2013-11-21 2016-06-21 Ford Global Technologies, Llc Vehicle sunshade assembly
US9538874B2 (en) 2013-11-21 2017-01-10 Ford Global Technologies, Llc Photoluminescent cupholder illumination
US10400978B2 (en) 2013-11-21 2019-09-03 Ford Global Technologies, Llc Photoluminescent lighting apparatus for vehicles
US9463738B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Seatbelt lighting system
US9327643B2 (en) 2013-11-21 2016-05-03 Ford Global Technologies, Llc Photoluminescent lift gate lamp
US9463734B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Illuminated seatbelt assembly
US9586523B2 (en) 2013-11-21 2017-03-07 Ford Global Technologies, Llc Vehicle lighting assembly
US9989216B2 (en) 2013-11-21 2018-06-05 Ford Global Technologies, Llc Interior exterior moving designs
US9464776B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Vehicle light system with illuminating exhaust
US9776557B2 (en) 2013-11-21 2017-10-03 Ford Global Technologies, Llc Dual direction light producing assembly
US9446709B2 (en) 2013-11-21 2016-09-20 Ford Global Technologies, Llc Vehicle backlit assembly with photoluminescent structure
US9961745B2 (en) 2013-11-21 2018-05-01 Ford Global Technologies, Llc Printed LED rylene dye welcome/farewell lighting
US9625115B2 (en) 2013-11-21 2017-04-18 Ford Global Technologies, Llc Photoluminescent vehicle graphics
US9764686B2 (en) 2013-11-21 2017-09-19 Ford Global Technologies, Llc Light-producing assembly for a vehicle
US9393904B2 (en) 2013-11-21 2016-07-19 Ford Global Technologies, Llc Photoluminescent engine compartment lighting
US9587800B2 (en) 2013-11-21 2017-03-07 Ford Global Technologies, Llc Luminescent vehicle molding
US9487127B2 (en) 2013-11-21 2016-11-08 Ford Global Technologies, Llc Photoluminescent vehicle step lamp
US9796304B2 (en) 2013-11-21 2017-10-24 Ford Global Technologies, Llc Vehicle floor lighting system having a pivotable base with light-producing assembly coupled to base
US9539939B2 (en) 2013-11-21 2017-01-10 Ford Global Technologies, Llc Photoluminescent logo for vehicle trim and fabric
US9797575B2 (en) 2013-11-21 2017-10-24 Ford Global Technologies, Llc Light-producing assembly for a vehicle
US9499096B2 (en) 2013-11-21 2016-11-22 Ford Global Technologies, Llc Photoluminescent vehicle reading lamp
US9598632B2 (en) 2013-11-21 2017-03-21 Ford Global Technologies, Llc Method for depositing photoluminescent material
US9573516B2 (en) 2013-11-21 2017-02-21 Ford Global Technologies, Llc Rear vehicle lighting system
US9849831B2 (en) 2013-11-21 2017-12-26 Ford Global Technologies, Llc Printed LED storage compartment
US9810401B2 (en) 2013-11-21 2017-11-07 Ford Global Technologies, Llc Luminescent trim light assembly
US9463737B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Illuminated seatbelt assembly
US9782504B2 (en) 2013-11-21 2017-10-10 Ford Global Technologies, Inc. Self-disinfecting surface with printed LEDs for a surface of a vehicle
US10363867B2 (en) 2013-11-21 2019-07-30 Ford Global Technologies, Llc Printed LED trim panel lamp
US9771019B2 (en) 2013-11-21 2017-09-26 Ford Global Technologies, Inc. Photoluminescent vehicle illumination
US9492575B2 (en) 2013-11-21 2016-11-15 Ford Global Technologies, Llc Color changing and disinfecting surfaces
US9539937B2 (en) 2013-11-21 2017-01-10 Ford Global Technologies, Llc Vehicle step lamp
US9839098B2 (en) 2013-11-21 2017-12-05 Ford Global Technologies, Llc Light assembly operable as a dome lamp
US9688192B2 (en) 2013-11-21 2017-06-27 Ford Global Technologies, Llc Vehicle having interior and exterior lighting on tailgate
US9950658B2 (en) 2013-11-21 2018-04-24 Ford Global Technologies, Llc Privacy window system
US9469244B2 (en) 2013-11-21 2016-10-18 Ford Global Technologies, Llc Luminescent vehicle seal
US9499092B2 (en) 2013-11-21 2016-11-22 Ford Global Technologies, Llc Illuminating molding for a vehicle
US9688186B2 (en) 2013-11-21 2017-06-27 Ford Global Technologies, Llc Illuminating decal for a vehicle
US9440584B2 (en) 2013-11-21 2016-09-13 Ford Global Technologies, Llc Photoluminescent vehicle console
US9694743B2 (en) 2013-11-21 2017-07-04 Ford Global Technologies, Llc Dual purpose lighting assembly
US9434302B2 (en) 2013-11-21 2016-09-06 Ford Global Technologies,Llc Photoluminescent bin lamp
US9434301B2 (en) 2013-11-21 2016-09-06 Ford Global Technologies, Llc Hidden photoluminescent vehicle user interface
US9393905B2 (en) 2013-11-21 2016-07-19 Ford Global Technologies, Llc Photoluminescent vehicle compartment light
US9868387B2 (en) 2013-11-21 2018-01-16 Ford Global Technologies, Llc Photoluminescent printed LED molding
US9457712B2 (en) 2013-11-21 2016-10-04 Ford Global Technologies, Llc Vehicle sun visor providing luminescent lighting
US9487135B2 (en) 2013-11-21 2016-11-08 Ford Global Technologies, Llc Dome light assembly
US9212809B2 (en) 2013-11-21 2015-12-15 Ford Global Technologies, Llc Photoluminescent dynamic lighting
US9464803B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Illuminated speaker
US9481297B2 (en) 2013-11-21 2016-11-01 Ford Global Technologies, Llc Illuminated steering assembly
US9434304B2 (en) 2013-11-21 2016-09-06 Ford Global Technologies, Llc Illuminated vehicle compartment
US9539940B2 (en) 2013-11-21 2017-01-10 Ford Global Technologies, Llc Illuminated indicator
US9440583B2 (en) 2013-11-21 2016-09-13 Ford Global Technologies, Llc Vehicle dome lighting system with photoluminescent structure
US9434294B2 (en) 2013-11-21 2016-09-06 Ford Global Technologies, Llc Photoluminescent vehicle badge
US9499090B2 (en) 2013-11-21 2016-11-22 Ford Global Technologies, Llc Spoiler using photoluminescent illumination
US9434297B2 (en) 2013-11-21 2016-09-06 Ford Global Technologies, Llc Photoluminescent vehicle graphics
US9821708B2 (en) 2013-11-21 2017-11-21 Ford Global Technologies, Llc Illuminated exterior strip
US9376058B2 (en) 2013-11-21 2016-06-28 Ford Global Technologies, Llc Fluid level indicator using photoluminescent illumination
US9409515B2 (en) 2013-11-21 2016-08-09 Ford Global Technologies, Llc Luminescent seating assembly
US9969323B2 (en) 2013-11-21 2018-05-15 Ford Global Technologies, Llc Vehicle lighting system employing a light strip
US10064256B2 (en) 2013-11-21 2018-08-28 Ford Global Technologies, Llc System and method for remote activation of vehicle lighting
US9464887B2 (en) 2013-11-21 2016-10-11 Ford Global Technologies, Llc Illuminated hitch angle detection component
US9613549B2 (en) 2013-11-21 2017-04-04 Ford Global Technologies, Llc Illuminating badge for a vehicle
US9459453B2 (en) 2013-11-21 2016-10-04 Ford Global Technologies, Llc Windshield display system
US10374137B2 (en) * 2014-03-11 2019-08-06 Osram Gmbh Light converter assemblies with enhanced heat dissipation
US9302616B2 (en) 2014-04-21 2016-04-05 Ford Global Technologies, Llc Vehicle lighting apparatus with multizone proximity control
TWI565108B (en) * 2014-08-21 2017-01-01 錼創科技股份有限公司 Light emitting module
WO2016032167A1 (en) * 2014-08-26 2016-03-03 엘지이노텍(주) Light-emitting element package
US10477636B1 (en) * 2014-10-28 2019-11-12 Ecosense Lighting Inc. Lighting systems having multiple light sources
US9869450B2 (en) 2015-02-09 2018-01-16 Ecosense Lighting Inc. Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector
JP6156402B2 (en) * 2015-02-13 2017-07-05 日亜化学工業株式会社 Light emitting device
US9651227B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Low-profile lighting system having pivotable lighting enclosure
US9651216B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Lighting systems including asymmetric lens modules for selectable light distribution
US9568665B2 (en) 2015-03-03 2017-02-14 Ecosense Lighting Inc. Lighting systems including lens modules for selectable light distribution
US9746159B1 (en) 2015-03-03 2017-08-29 Ecosense Lighting Inc. Lighting system having a sealing system
USD785218S1 (en) 2015-07-06 2017-04-25 Ecosense Lighting Inc. LED luminaire having a mounting system
USD782093S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
USD782094S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
US9651232B1 (en) 2015-08-03 2017-05-16 Ecosense Lighting Inc. Lighting system having a mounting device
US10168039B2 (en) 2015-08-10 2019-01-01 Ford Global Technologies, Llc Illuminated badge for a vehicle
US9663967B2 (en) 2015-09-11 2017-05-30 Ford Global Technologies, Llc Illuminated latch system
US9463735B1 (en) 2015-10-06 2016-10-11 Ford Global Technologies, Llc Vehicle visor assembly with illuminating check assembly
US10081295B2 (en) 2015-10-13 2018-09-25 Ford Global Technologies, Llc Illuminated badge for a vehicle
FR3042905B1 (en) * 2015-10-23 2018-11-16 Vmicro Device and microelectromechanical system with low impedance resistive transducer
US9694739B2 (en) 2015-11-10 2017-07-04 Ford Global Technologies, Llc Disinfecting handle
US9889791B2 (en) 2015-12-01 2018-02-13 Ford Global Technologies, Llc Illuminated badge for a vehicle
CN205229630U (en) * 2015-12-10 2016-05-11 乐视致新电子科技(天津)有限公司 Backlight unit , display module assembly and display device
US10023100B2 (en) 2015-12-14 2018-07-17 Ford Global Technologies, Llc Illuminated trim assembly
US9500333B1 (en) 2015-12-18 2016-11-22 Ford Global Technologies, Llc Phosphorescent lighting assembly
JP6442423B2 (en) * 2015-12-22 2018-12-19 富士フイルム株式会社 Lighting device
WO2017110737A1 (en) * 2015-12-22 2017-06-29 富士フイルム株式会社 Illumination device
US10300843B2 (en) 2016-01-12 2019-05-28 Ford Global Technologies, Llc Vehicle illumination assembly
US10235911B2 (en) 2016-01-12 2019-03-19 Ford Global Technologies, Llc Illuminating badge for a vehicle
US10501007B2 (en) 2016-01-12 2019-12-10 Ford Global Technologies, Llc Fuel port illumination device
US10011219B2 (en) 2016-01-18 2018-07-03 Ford Global Technologies, Llc Illuminated badge
US9927114B2 (en) 2016-01-21 2018-03-27 Ford Global Technologies, Llc Illumination apparatus utilizing conductive polymers
US9517723B1 (en) 2016-01-21 2016-12-13 Ford Global Technologies, Llc Illuminated tie-down cleat
US9586519B1 (en) 2016-01-27 2017-03-07 Ford Global Technologies, Llc Vehicle rear illumination
US9623797B1 (en) 2016-02-04 2017-04-18 Ford Global Technologies, Llc Lift gate lamp
US9499094B1 (en) 2016-02-08 2016-11-22 Ford Global Technologies, Llc Retractable running board with long-persistence phosphor lighting
US9499093B1 (en) 2016-02-08 2016-11-22 Ford Global Technologies, Llc Retractable running board with long-persistance phosphor lighting
US10189401B2 (en) 2016-02-09 2019-01-29 Ford Global Technologies, Llc Vehicle light strip with optical element
US9855799B2 (en) 2016-02-09 2018-01-02 Ford Global Technologies, Llc Fuel level indicator
US9664354B1 (en) 2016-02-11 2017-05-30 Ford Global Technologies, Llc Illumination assembly
US9656598B1 (en) 2016-02-23 2017-05-23 Ford Global Technologies, Llc Vehicle badge
US9751458B1 (en) 2016-02-26 2017-09-05 Ford Global Technologies, Llc Vehicle illumination system
US10501025B2 (en) 2016-03-04 2019-12-10 Ford Global Technologies, Llc Vehicle badge
US10118568B2 (en) 2016-03-09 2018-11-06 Ford Global Technologies, Llc Vehicle badge having discretely illuminated portions
US9688189B1 (en) 2016-03-09 2017-06-27 Ford Global Technologies, Llc Illuminated license plate
US9656592B1 (en) 2016-03-11 2017-05-23 Ford Global Technologies, Llc System and method of calibrating a vehicle badge having a number of light sources
US9688190B1 (en) 2016-03-15 2017-06-27 Ford Global Technologies, Llc License plate illumination system
TWI596851B (en) * 2016-03-24 2017-08-21 國立中央大學 Laser stimulated white light lighting system
US9963001B2 (en) 2016-03-24 2018-05-08 Ford Global Technologies, Llc Vehicle wheel illumination assembly using photoluminescent material
US10081296B2 (en) 2016-04-06 2018-09-25 Ford Global Technologies, Llc Illuminated exterior strip with photoluminescent structure and retroreflective layer
US9714749B1 (en) 2016-05-10 2017-07-25 Ford Global Technologies, Llc Illuminated vehicle grille assembly
US9758088B1 (en) 2016-05-10 2017-09-12 Ford Global Technologies, Llc Auxiliary lighting roof rack
US10064259B2 (en) 2016-05-11 2018-08-28 Ford Global Technologies, Llc Illuminated vehicle badge
US9688215B1 (en) 2016-05-11 2017-06-27 Ford Global Technologies, Llc Iridescent vehicle applique
US9738219B1 (en) 2016-05-11 2017-08-22 Ford Global Technologies, Llc Illuminated vehicle trim
US10420189B2 (en) 2016-05-11 2019-09-17 Ford Global Technologies, Llc Vehicle lighting assembly
US9821710B1 (en) 2016-05-12 2017-11-21 Ford Global Technologies, Llc Lighting apparatus for vehicle decklid
US9586527B1 (en) 2016-05-18 2017-03-07 Ford Global Technologies, Llc Wheel well step assembly of vehicle
CN107403791A (en) * 2016-05-18 2017-11-28 光宝光电(常州)有限公司 Active display and the method for forming active display
US9821717B1 (en) 2016-05-18 2017-11-21 Ford Global Technologies, Llc Box step with release button that illuminates
US9994144B2 (en) 2016-05-23 2018-06-12 Ford Global Technologies, Llc Illuminated automotive glazings
US9896020B2 (en) 2016-05-23 2018-02-20 Ford Global Technologies, Llc Vehicle lighting assembly
US9925917B2 (en) 2016-05-26 2018-03-27 Ford Global Technologies, Llc Concealed lighting for vehicles
US9937855B2 (en) 2016-06-02 2018-04-10 Ford Global Technologies, Llc Automotive window glazings
US9803822B1 (en) 2016-06-03 2017-10-31 Ford Global Technologies, Llc Vehicle illumination assembly
US10343622B2 (en) 2016-06-09 2019-07-09 Ford Global Technologies, Llc Interior and exterior iridescent vehicle appliques
US10205338B2 (en) 2016-06-13 2019-02-12 Ford Global Technologies, Llc Illuminated vehicle charging assembly
US9604567B1 (en) 2016-06-15 2017-03-28 Ford Global Technologies, Llc Luminescent trailer hitch plug
US10131237B2 (en) 2016-06-22 2018-11-20 Ford Global Technologies, Llc Illuminated vehicle charging system
US9855888B1 (en) 2016-06-29 2018-01-02 Ford Global Technologies, Llc Photoluminescent vehicle appliques
DE102016212078A1 (en) * 2016-07-04 2018-01-04 Osram Gmbh Lighting device
US9840191B1 (en) 2016-07-12 2017-12-12 Ford Global Technologies, Llc Vehicle lamp assembly
JP2018010958A (en) * 2016-07-13 2018-01-18 日亜化学工業株式会社 Light-emitting device, method for manufacturing the same, and display device
US9855797B1 (en) 2016-07-13 2018-01-02 Ford Global Technologies, Llc Illuminated system for a vehicle
US9889801B2 (en) 2016-07-14 2018-02-13 Ford Global Technologies, Llc Vehicle lighting assembly
US9840193B1 (en) 2016-07-15 2017-12-12 Ford Global Technologies, Llc Vehicle lighting assembly
US9573518B1 (en) 2016-07-15 2017-02-21 Ford Global Technologies, Llc Floor console IR bin light
US9604569B1 (en) 2016-07-19 2017-03-28 Ford Global Technologies, Llc Window lighting system of a vehicle
US9587967B1 (en) 2016-08-04 2017-03-07 Ford Global Technologies, Llc Vehicle container illumination
US9845047B1 (en) 2016-08-08 2017-12-19 Ford Global Technologies, Llc Light system
US9573519B1 (en) 2016-08-08 2017-02-21 Ford Global Technologies, Llc Engine compartment lighting to moving parts
US9573520B1 (en) 2016-08-09 2017-02-21 Ford Global Technologies, Llc Luminescent console storage bin
US9827903B1 (en) 2016-08-18 2017-11-28 Ford Global Technologies, Llc Illuminated trim panel
US9616823B1 (en) 2016-08-22 2017-04-11 Ford Global Technologies, Llc Illuminated badge for a vehicle
US10173604B2 (en) 2016-08-24 2019-01-08 Ford Global Technologies, Llc Illuminated vehicle console
US10047659B2 (en) 2016-08-31 2018-08-14 Ford Global Technologies, Llc Photoluminescent engine indicium
US10047911B2 (en) 2016-08-31 2018-08-14 Ford Global Technologies, Llc Photoluminescent emission system
US9604568B1 (en) 2016-09-01 2017-03-28 Ford Global Technologies, Llc Vehicle light system
US10065555B2 (en) 2016-09-08 2018-09-04 Ford Global Technologies, Llc Directional approach lighting
US10075013B2 (en) 2016-09-08 2018-09-11 Ford Global Technologies, Llc Vehicle apparatus for charging photoluminescent utilities
US10308175B2 (en) 2016-09-08 2019-06-04 Ford Global Technologies, Llc Illumination apparatus for vehicle accessory
US10043396B2 (en) 2016-09-13 2018-08-07 Ford Global Technologies, Llc Passenger pickup system and method using autonomous shuttle vehicle
US9593820B1 (en) 2016-09-28 2017-03-14 Ford Global Technologies, Llc Vehicle illumination system
US9863171B1 (en) 2016-09-28 2018-01-09 Ford Global Technologies, Llc Vehicle compartment
US10137829B2 (en) 2016-10-06 2018-11-27 Ford Global Technologies, Llc Smart drop off lighting system
US10046688B2 (en) 2016-10-06 2018-08-14 Ford Global Technologies, Llc Vehicle containing sales bins
US9914390B1 (en) 2016-10-19 2018-03-13 Ford Global Technologies, Llc Vehicle shade assembly
US9707887B1 (en) 2016-10-19 2017-07-18 Ford Global Technologies, Llc Vehicle mirror assembly
US10086700B2 (en) 2016-10-20 2018-10-02 Ford Global Technologies, Llc Illuminated switch
US9802534B1 (en) 2016-10-21 2017-10-31 Ford Global Technologies, Llc Illuminated vehicle compartment
US10035473B2 (en) 2016-11-04 2018-07-31 Ford Global Technologies, Llc Vehicle trim components
US9902314B1 (en) 2016-11-17 2018-02-27 Ford Global Technologies, Llc Vehicle light system
KR101961031B1 (en) * 2016-11-18 2019-03-22 효성화학 주식회사 high brightness film for liquid crystal display device and method for preparing the same
KR20180059249A (en) * 2016-11-25 2018-06-04 엘지전자 주식회사 Display device using semiconductor light emitting device and method for manufacturing
US9994089B1 (en) 2016-11-29 2018-06-12 Ford Global Technologies, Llc Vehicle curtain
US10220784B2 (en) 2016-11-29 2019-03-05 Ford Global Technologies, Llc Luminescent windshield display
US10106074B2 (en) 2016-12-07 2018-10-23 Ford Global Technologies, Llc Vehicle lamp system
US10118538B2 (en) 2016-12-07 2018-11-06 Ford Global Technologies, Llc Illuminated rack
US10422501B2 (en) 2016-12-14 2019-09-24 Ford Global Technologies, Llc Vehicle lighting assembly
US10144365B2 (en) 2017-01-10 2018-12-04 Ford Global Technologies, Llc Vehicle badge
US9815402B1 (en) 2017-01-16 2017-11-14 Ford Global Technologies, Llc Tailgate and cargo box illumination
US10173582B2 (en) 2017-01-26 2019-01-08 Ford Global Technologies, Llc Light system
US10053006B1 (en) 2017-01-31 2018-08-21 Ford Global Technologies, Llc Illuminated assembly
US9849830B1 (en) 2017-02-01 2017-12-26 Ford Global Technologies, Llc Tailgate illumination
US10427593B2 (en) 2017-02-09 2019-10-01 Ford Global Technologies, Llc Vehicle light assembly
US9896023B1 (en) 2017-02-09 2018-02-20 Ford Global Technologies, Llc Vehicle rear lighting assembly
US9849829B1 (en) 2017-03-02 2017-12-26 Ford Global Technologies, Llc Vehicle light system
US9758090B1 (en) 2017-03-03 2017-09-12 Ford Global Technologies, Llc Interior side marker
US10240737B2 (en) 2017-03-06 2019-03-26 Ford Global Technologies, Llc Vehicle light assembly
US10399483B2 (en) 2017-03-08 2019-09-03 Ford Global Technologies, Llc Vehicle illumination assembly
US10195985B2 (en) 2017-03-08 2019-02-05 Ford Global Technologies, Llc Vehicle light system
US10150396B2 (en) 2017-03-08 2018-12-11 Ford Global Technologies, Llc Vehicle cup holder assembly with photoluminescent accessory for increasing the number of available cup holders
US10166913B2 (en) 2017-03-15 2019-01-01 Ford Global Technologies, Llc Side marker illumination
US10465879B2 (en) 2017-03-27 2019-11-05 Ford Global Technologies, Llc Vehicular light assemblies with LED-excited photoluminescent lightguide
US10483678B2 (en) 2017-03-29 2019-11-19 Ford Global Technologies, Llc Vehicle electrical connector
US10023110B1 (en) 2017-04-21 2018-07-17 Ford Global Technologies, Llc Vehicle badge sensor assembly
US10399486B2 (en) 2017-05-10 2019-09-03 Ford Global Technologies, Llc Vehicle door removal and storage
US10035463B1 (en) 2017-05-10 2018-07-31 Ford Global Technologies, Llc Door retention system
US9963066B1 (en) 2017-05-15 2018-05-08 Ford Global Technologies, Llc Vehicle running board that provides light excitation
KR20180128151A (en) * 2017-05-23 2018-12-03 현대자동차주식회사 Head lamp apparatus for vehicle
US10059238B1 (en) 2017-05-30 2018-08-28 Ford Global Technologies, Llc Vehicle seating assembly
US10144337B1 (en) 2017-06-02 2018-12-04 Ford Global Technologies, Llc Vehicle light assembly
US10493904B2 (en) 2017-07-17 2019-12-03 Ford Global Technologies, Llc Vehicle light assembly
US10502690B2 (en) 2017-07-18 2019-12-10 Ford Global Technologies, Llc Indicator system for vehicle wear components
US10137831B1 (en) 2017-07-19 2018-11-27 Ford Global Technologies, Llc Vehicle seal assembly
US10160405B1 (en) 2017-08-22 2018-12-25 Ford Global Technologies, Llc Vehicle decal assembly
US10186177B1 (en) 2017-09-13 2019-01-22 Ford Global Technologies, Llc Vehicle windshield lighting assembly
US10137825B1 (en) 2017-10-02 2018-11-27 Ford Global Technologies, Llc Vehicle lamp assembly
US10391943B2 (en) 2017-10-09 2019-08-27 Ford Global Technologies, Llc Vehicle lamp assembly
US10207636B1 (en) 2017-10-18 2019-02-19 Ford Global Technologies, Llc Seatbelt stowage assembly
US10189414B1 (en) 2017-10-26 2019-01-29 Ford Global Technologies, Llc Vehicle storage assembly
US10281113B1 (en) 2018-03-05 2019-05-07 Ford Global Technologies, Llc Vehicle grille
US10457196B1 (en) 2018-04-11 2019-10-29 Ford Global Technologies, Llc Vehicle light assembly
US10310197B1 (en) 2018-09-17 2019-06-04 Waymo Llc Transmitter devices having bridge structures

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6738068B2 (en) 2000-12-29 2004-05-18 Intel Corporation Entering and exiting power managed states without disrupting accelerated graphics port transactions
US6839846B2 (en) 2001-01-03 2005-01-04 Intel Corporation Embedding digital signatures into digital payloads
EP1413619A1 (en) 2002-09-24 2004-04-28 Osram Opto Semiconductors GmbH Luminescent material, especially for LED application
KR100616513B1 (en) * 2003-11-01 2006-08-29 삼성전기주식회사 Phosphor, method for preparing the same, red LED using the phosphor, white LED using the phosphor, and active dynamic LCD
JP3921545B2 (en) 2004-03-12 2007-05-30 独立行政法人物質・材料研究機構 Phosphor and production method thereof
JP2006213910A (en) 2005-01-06 2006-08-17 Matsushita Electric Ind Co Ltd Oxynitride phosphor and light-emitting device
JP4756261B2 (en) 2005-01-27 2011-08-24 独立行政法人物質・材料研究機構 Phosphor, method for producing the same, and light emitting device
US20100141172A1 (en) 2005-02-14 2010-06-10 Mitsubishi Chemical Corporation Light Source, Solid State Light Emitting Element Module, Fluorescent Module, Light Orientation Element Module, Illumination Device, Image Display Device, and Light Source Adjustment Method
US7489073B2 (en) * 2005-04-15 2009-02-10 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Blue to yellow-orange emitting phosphor, and light source having such a phosphor
US8920676B2 (en) * 2005-09-30 2014-12-30 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20080054793A1 (en) * 2006-08-30 2008-03-06 Everlight Electronics Co., Ltd. White light-emitting apparatus
DE102007025679A1 (en) 2007-06-01 2008-12-04 Osram Gesellschaft mit beschränkter Haftung New oxidonitridoaluminosilicate compound useful as phosphor material in a radiation-emitting device, preferably light emitting diode
KR101450785B1 (en) * 2008-01-07 2014-10-15 삼성디스플레이 주식회사 Fluorescent Lamp, Backlight Assembly Having The Same And Display Device Having The Same
JP5072964B2 (en) 2008-03-13 2012-11-14 三菱重工業株式会社 Wind power generator
KR101717668B1 (en) 2010-03-26 2017-03-17 삼성전자주식회사 Complex crystal phosphor, light emitting device, display apparatus and illumination apparatus

Also Published As

Publication number Publication date
US20110096560A1 (en) 2011-04-28
US8773012B2 (en) 2014-07-08
JP2011089121A (en) 2011-05-06
EP2530133B1 (en) 2018-10-03
CN102041002A (en) 2011-05-04
TW201127936A (en) 2011-08-16
US20140133146A1 (en) 2014-05-15
EP2530133A3 (en) 2014-08-20
KR20100120616A (en) 2010-11-16
KR101565988B1 (en) 2015-11-05
EP2314658B1 (en) 2018-02-21
US8652357B2 (en) 2014-02-18
EP2314658A1 (en) 2011-04-27
TWI414585B (en) 2013-11-11
EP2530133A2 (en) 2012-12-05

Similar Documents

Publication Publication Date Title
EP1865564B1 (en) Light-emitting device, white light-emitting device, illuminator, and image display
US10008644B2 (en) Light emitting device and fabricating method thereof
KR100872295B1 (en) White light emitting device and white light source module using the same
US8405304B2 (en) Light emtting device
CN1941441B (en) Light emitting means
JP5521325B2 (en) Light emitting device and manufacturing method thereof
KR101204115B1 (en) Light emitting device with light distribution characteristic controlling lens
JP5261380B2 (en) Light emitting device
JP5177199B2 (en) Light emitting device and display device
KR100946015B1 (en) White led device and light source module for lcd backlight using the same
JP5707697B2 (en) Light emitting device
CN100428505C (en) White light emitting device
JP5083503B2 (en) Light emitting device and lighting device
US7906789B2 (en) Warm white light emitting apparatus and back light module comprising the same
JP2006310613A (en) Semiconductor light emitting device
KR100983428B1 (en) Light-emitting device
JP2010283281A (en) Light emitting device
US20110233589A1 (en) Light-emitting device, light-emitting device package and lighting system
US20110085352A1 (en) Light emitting device, surface light source, liquid crystal display device, and method for manufacturing light emitting device
CN102144307B (en) An LED package and a backlight unit comprising said LED package
TWI485347B (en) A linear white light source and a backlight and a liquid crystal display device using the same
EP2448028B1 (en) Light emitting apparatus and production method thereof
JP2004055632A (en) Semiconductor light-emitting device
JP2004241282A (en) Surface light emitting device and its manufacturing method
CN101958391B (en) Light-emitting device

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20120813

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20130321

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131021

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131021

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140930

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141014

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141209

R150 Certificate of patent or registration of utility model

Ref document number: 5678303

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250