JP5644916B2 - Coating and developing equipment - Google Patents

Description

The present invention relates to a coating and developing apparatus that applies a resist to a substrate and performs development.

  In the photoresist process, which is one of the semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the resist is exposed in a predetermined pattern, and then developed to form a resist pattern. . The coating / developing apparatus for forming the resist pattern is provided with a processing block including a processing module for performing various processes on the wafer.

  As described in Patent Document 1, for example, the processing block is configured by laminating a unit block for forming various coating films such as a resist film and a unit block for performing development processing. The wafers are sequentially processed by delivering processing modules provided in each unit block.

  By the way, in order to form a finer pattern and further reduce the yield, the processing modules installed in the processing block are diversified. For example, in addition to a resist film forming module for applying a resist to a wafer and a developing module for supplying a developing solution, a back surface cleaning module for cleaning the back surface of a wafer on which a resist is applied, and supplying a chemical to the upper layer of the resist film In some cases, a liquid processing module for an upper layer for forming a film is provided. After these various processing modules are mounted on the processing block, how to reduce the occupied floor area of the coating and developing apparatus is being studied.

  The configuration in which the above unit blocks are stacked is effective for suppressing the occupied floor area, but since the wafer is sequentially transferred to each unit block, an abnormality occurs in one processing module or unit block, When performing maintenance, it may be necessary to stop the entire processing of the coating and developing apparatus. If it becomes so, there exists a problem that the operating efficiency of an apparatus will fall.

JP2007-115831

  The present invention has been made under such circumstances, and reduces the installation area of the processing block, and suppresses a decrease in the operating efficiency of the coating and developing apparatus when an abnormality occurs in the unit block or maintenance is performed. It is to provide a technology that can.

In the coating and developing apparatus of the present invention, the substrate carried into the carrier block by the carrier is transferred to the processing block, and after the coating film including the resist film is formed in the processing block, the carrier block is defined with respect to the processing block. In the coating and developing apparatus, the substrate after the exposure is conveyed to the exposure apparatus through the interface block located on the opposite side, and returned to the carrier block after being developed through the processing block. ,
a) The processing block comprises:
A liquid processing module that supplies chemicals to the substrate to form the previous thin film among the thin films required for exposure processing, a heating module that heats the substrate, and a carrier block and interface for transporting the substrate between these modules A unit block for transporting a unit block that moves on a straight transport path connecting the blocks, and a unit block for pre-stage application as a first unit block for pre-stage application and a unit block for second pre-stage application up and down Duplicated and laminated with each other,
A heating module that heats the substrate, and a liquid processing module that is stacked on the unit block for the former application and supplies a chemical solution onto the former thin film among the thin films necessary for the exposure process to form the latter thin film. And a unit block transport unit for moving on a linear transport path connecting the carrier block and the interface block for transporting the substrate between these modules, a unit block for post-coating comprising a first post-coating unit block A unit block for use and a unit block for second subsequent application, which are vertically doubled and laminated together,
For a unit block that moves on a straight conveyance path that is stacked on the unit block for the previous stage application and that supplies a developer to the substrate, a heating module that heats the substrate, and a carrier block and an interface block A development processing unit block including a first development processing unit block and a second development processing unit block that are vertically doubled and stacked on each other. When,
b) one of the preceding thin film and the subsequent thin film is a thin film including a resist film;
c) a delivery unit that is provided on the carrier block side for each unit block and delivers the substrate to and from the transport mechanism of each unit block;
d) The substrate is distributed and delivered from the carrier to the delivery part corresponding to each unit block for the preceding application, and the substrate is returned to the carrier from the delivery part of each unit block for the development process, and each unit for the preceding application is provided. A first delivery mechanism for delivering the substrate processed in the block to the delivery unit corresponding to each unit block for subsequent coating;
e) a second delivery mechanism for receiving the pre-exposure substrate processed in the processing block and distributing and delivering the post-exposure substrate to a unit block for development processing;
f) a post-development inspection module for inspecting the substrate after the development process;
g) a storage unit for storing data of a route along which a substrate to be inspected is transferred before being inspected by the inspection module;
h) a control unit provided to carry a subsequent substrate based on data stored in the storage unit when an abnormality is detected in the substrate in the inspection by the inspection module;
With
The control unit identifies a module in which a substrate in which an abnormality is detected is processed in a unit block for development processing, and transports a subsequent block to a module other than the identified module. Control the operation of the mechanism ,
The unit block for the first-stage application forms a resist film by supplying a chemical solution to the substrate to form a lower-layer antireflection film and a resist solution on the antireflection film. A coating module, a heating module that heats the substrate, and a transport mechanism for the unit block that moves on a straight transport path that connects the carrier block and the interface block in order to transport the substrate between these modules,
The unit block for the subsequent coating includes a liquid processing module for an upper layer that supplies a chemical solution to the substrate on which the resist film is formed to form an upper layer side film, and a substrate on which the resist film is formed before the exposure. A pre-processing module for performing pre-processing, a heating module for heating a substrate, and a transport mechanism for a unit block that moves on a straight transport path connecting the carrier block and the interface block to transport the substrate between these modules And comprising
A liquid processing module for an upper layer for supplying a chemical solution to a substrate on which a resist film is formed to form an upper layer side film, and a pretreatment for performing a pretreatment before exposure on a substrate on which a resist film is formed A module, a heating module that heats the substrate, and a transport mechanism for a unit block that moves on a straight transport path that connects the carrier block and the interface block to transport the substrate between these modules. The unit block is vertically doubled as a first upper layer unit block and a second upper layer unit block, and is laminated on the unit block for subsequent coating. .


In the coating and developing apparatus of the present invention, the substrate carried into the carrier block by the carrier is transferred to the processing block, and after the coating film including the resist film is formed in the processing block, the carrier block is defined with respect to the processing block. In the coating and developing apparatus, the substrate after the exposure is conveyed to the exposure apparatus through the interface block located on the opposite side, and returned to the carrier block after being developed through the processing block. ,
a) The processing block comprises:
A liquid processing module that supplies chemicals to the substrate to form the previous thin film among the thin films required for exposure processing, a heating module that heats the substrate, and a carrier block and interface for transporting the substrate between these modules A unit block for transporting a unit block that moves on a straight transport path connecting the blocks, and a unit block for pre-stage application as a first unit block for pre-stage application and a unit block for second pre-stage application up and down Duplicated and laminated with each other,
A heating module that heats the substrate, and a liquid processing module that is stacked on the unit block for the former application and supplies a chemical solution onto the former thin film among the thin films necessary for the exposure process to form the latter thin film. And a unit block transport unit for moving on a linear transport path connecting the carrier block and the interface block for transporting the substrate between these modules, a unit block for post-coating comprising a first post-coating unit block A unit block for use and a unit block for second subsequent application, which are vertically doubled and laminated together,
For a unit block that moves on a straight conveyance path that is stacked on the unit block for the previous stage application and that supplies a developer to the substrate, a heating module that heats the substrate, and a carrier block and an interface block A development processing unit block including a first development processing unit block and a second development processing unit block that are vertically doubled and stacked on each other. When,
b) one of the preceding thin film and the subsequent thin film is a thin film including a resist film;
c) a delivery unit that is provided on the carrier block side for each unit block and delivers the substrate to and from the transport mechanism of each unit block;
d) The substrate is distributed and delivered from the carrier to the delivery part corresponding to each unit block for the preceding application, and the substrate is returned to the carrier from the delivery part of each unit block for the development process, and each unit for the preceding application is provided. A first delivery mechanism for delivering the substrate processed in the block to the delivery unit corresponding to each unit block for subsequent coating;
e) a second delivery mechanism for receiving the pre-exposure substrate processed in the processing block and distributing and delivering the post-exposure substrate to a unit block for development processing;
f) a post-development inspection module for inspecting the substrate after the development process;
g) a storage unit for storing data of a route along which a substrate to be inspected is transferred before being inspected by the inspection module;
h) a control unit provided to carry a subsequent substrate based on data stored in the storage unit when an abnormality is detected in the substrate in the inspection by the inspection module;
With
The control unit specifies a development processing unit block on which a substrate in which an abnormality has been detected is processed, and transports the subsequent substrate to a development processing unit block other than the specified development processing unit block. Control the operation of the second delivery mechanism ,
The unit block for the first-stage application forms a resist film by supplying a chemical solution to the substrate to form a lower-layer antireflection film and a resist solution on the antireflection film. A coating module, a heating module that heats the substrate, and a transport mechanism for the unit block that moves on a straight transport path that connects the carrier block and the interface block in order to transport the substrate between these modules,
The unit block for the subsequent coating includes a liquid processing module for an upper layer that supplies a chemical solution to the substrate on which the resist film is formed to form an upper layer side film, and a substrate on which the resist film is formed before the exposure. A pre-processing module for performing pre-processing, a heating module for heating a substrate, and a transport mechanism for a unit block that moves on a straight transport path connecting the carrier block and the interface block to transport the substrate between these modules And comprising
A liquid processing module for an upper layer for supplying a chemical solution to a substrate on which a resist film is formed to form an upper layer side film, and a pretreatment for performing a pretreatment before exposure on a substrate on which a resist film is formed A module, a heating module that heats the substrate, and a transport mechanism for a unit block that moves on a straight transport path that connects the carrier block and the interface block to transport the substrate between these modules. The unit block is vertically doubled as a first upper layer unit block and a second upper layer unit block, and is laminated on the unit block for subsequent coating. .

The control unit may perform control as follows.
The control unit identifies a module in which a substrate in which an abnormality has been detected is processed in a unit block for pre-application, and transports a subsequent block to a module other than the identified module. to control the operation of the mechanism.
The control unit identifies a module in which a substrate in which an abnormality has been detected has been processed in a development processing unit block, a preceding coating unit block, and a subsequent coating unit block, and identifies a subsequent substrate. It controls the operation of the transport mechanism for the unit block to transport the modules other than the module.
The control unit identifies a development processing unit block and a pre-application unit block on which a substrate in which an abnormality has been detected has been processed, and transports the subsequent substrate to a unit block other than the identified unit block. The operation of the first delivery mechanism and the second delivery mechanism is controlled .
The control unit identifies a development processing unit block in which a substrate in which an abnormality has been detected is processed, a unit block for pre-coating, and a unit block for post-coating, and sets subsequent substrates other than the specified unit block. The operations of the first delivery mechanism and the second delivery mechanism are controlled so as to be conveyed to the unit block .

A post-application inspection module that inspects the substrate before exposure after forming the resist film,
A storage unit that stores data of a route along which a substrate to be inspected is transferred before being inspected by the inspection module after coating,
Is provided,
The controller , when an abnormality is detected in the substrate in the inspection by the post-inspection inspection module, based on the data stored in the storage unit, transport the subsequent substrate,
At least the resist film in the unit block including a liquid treatment module to form a to identify the substrate that has been detected the abnormality is processing module, a subsequent substrate, the unit block to transfer the modules other than the identified module Or control the operation of the transport mechanism for the following, or when an abnormality is detected in the substrate in the inspection by the post-application inspection module, based on the data stored in the storage unit, the subsequent substrate is transported,
At least in a unit block including a liquid processing module for forming a resist film, a unit block in which a substrate in which an abnormality has been detected is processed is specified, and subsequent substrates are transferred to a unit block other than the specified unit block Control the operation of the first delivery mechanism

Each unit block has the following configuration, for example.
(1) A unit block for pre-application includes a liquid processing module for a lower layer for supplying a chemical solution to a substrate to form an antireflection film on the lower layer side, and a resist film for supplying a resist solution on the antireflection film. A coating module for forming the substrate, a heating module for heating the substrate, and a transport mechanism for the unit block that moves on a linear transport path connecting the carrier block and the interface block to transport the substrate between these modules. ,
The unit block for the subsequent coating includes a liquid processing module for an upper layer that supplies a chemical solution to the substrate on which the resist film is formed to form an upper layer side film, and a substrate on which the resist film is formed before the exposure. A pre-processing module for performing pre-processing, a heating module for heating a substrate, and a transport mechanism for a unit block that moves on a straight transport path connecting the carrier block and the interface block to transport the substrate between these modules And comprising.
(2) The unit block for pre-stage application supplies a liquid solution to the substrate to form a lower-layer antireflection film, a lower-layer liquid processing module, a heating module that heats the substrate, and transports the substrate between these modules. A transport mechanism for the unit block that moves on the straight transport path connecting the carrier block and the interface block,
The unit block for subsequent coating includes a liquid processing module for supplying a resist solution to form a resist film, a heating module for heating the substrate, and a carrier block and an interface block for transporting the substrate between these modules. A transport mechanism for unit blocks that moves on the straight transport path to be connected.
(3) To perform a pre-exposure pre-exposure on the upper-layer liquid processing module that supplies a chemical solution to the substrate on which the resist film is formed to form an upper-layer film, and the substrate on which the resist film is formed. A pre-processing module, a heating module for heating the substrate, and a transport mechanism for a unit block that moves on a straight transport path connecting the carrier block and the interface block to transport the substrate between these modules. The upper unit block is vertically doubled as a first upper unit block and a second upper unit block, and the unit blocks stacked on each other are stacked on the unit block for subsequent coating.

The storage medium of the present invention is a storage medium storing a computer program used in a coating and developing apparatus,
The computer program is for carrying out the coating and developing methods described above.

According to the present invention, the coating unit block including the module for forming the resist film is vertically doubled. Further, a unit block for development processing that is doubled up and down is stacked on the doubled unit block. For this reason, an installation area can be made small, setting the depth dimension of a processing block to a moderate magnitude | size. Also, since each unit block is duplicated, one unit block can be used even when an abnormality occurs or maintenance is performed, and the decrease in operating efficiency can be suppressed. . Then, when an abnormality is detected in the substrate by the inspection module after the development, the previous substrate passes through the development processing unit block based on the data stored in the storage unit. It is transferred to a module other than the developed module , or is transferred to a unit block for development processing other than the unit block for development processing through which the previous substrate has passed . Even when viewed from the point where such transport control is performed, it is possible to suppress a decrease in the operating efficiency.

It is a top view of the coating and developing apparatus of the present invention. It is a perspective view of the coating and developing apparatus. It is a vertical side view of the coating and developing apparatus. It is a vertical side view of the liquid processing module of the coating and developing apparatus. It is a vertical front view of an interface block. It is a perspective view of the delivery module provided in the interface block. It is a block diagram of the control part of the said application | coating and developing apparatus. It is a schematic diagram which shows the data of the memory of the said control part. It is a schematic diagram which shows the data of the memory of the said control part. It is explanatory drawing which shows the mode which can be selected by a setting part. It is a flowchart which shows the conveyance path | route of the wafer in the said application | coating and developing apparatus. It is the flowchart which showed the process until conveyance to a unit block stops. It is a schematic diagram which shows the conveyance path | route of a wafer when abnormality is detected. It is a schematic diagram which shows the conveyance path | route of a wafer when abnormality is detected. It is the flowchart which showed the process until conveyance to a processing module stops. It is a vertical front view of an interface block. It is a vertical side view of another processing block. It is a vertical side view of another processing block. It is explanatory drawing which shows the mode which can be selected by a setting part.

(First embodiment)
The coating and developing apparatus 1 according to the present invention will be described. FIG. 1 shows a plan view of an embodiment in which the coating and developing apparatus 1 of the present invention is applied to a resist pattern forming apparatus, FIG. 2 is a schematic perspective view thereof, and FIG. 3 is a schematic side view thereof. The coating and developing apparatus 1 includes a carrier block S1 for carrying in and out a carrier C in which, for example, 25 wafers W serving as substrates are hermetically stored, a processing block S2 for processing the wafer W, The interface block S3 is arranged in a straight line. An exposure apparatus S4 that performs immersion exposure is connected to the interface block S3.

  In the carrier block S 1, a mounting table 11 on which the carrier C is mounted, an opening / closing part 12 provided on a wall surface in front of the mounting table 11, and a wafer W is taken out from the carrier C through the opening / closing part 12. A transfer arm 13 is provided. The transfer arm 13 includes five wafer holding portions 14 in the vertical direction, and is configured to be movable back and forth, movable up and down, rotatable about a vertical axis, and movable in the arrangement direction of the carrier C. The control unit 51, which will be described later, assigns a number to the wafer W of the carrier C, and the transfer arm 13 transfers the wafer W to the transfer module BU1 in batches in order of 5 sheets from the smallest number. Then, the transfer module BU1 is assigned to each unit block in order from the smallest number. A place where the wafer W can be placed is described as a module, and a module that performs processing such as heating, liquid processing, gas supply, or edge exposure on the wafer W is described as a processing module. Of the processing modules, a module for supplying a chemical solution or a cleaning solution to the wafer W is referred to as a liquid processing module.

  The processing block S2 is connected to the carrier block S1, and the processing block S2 is configured by laminating first to sixth blocks B1 to B6 for performing liquid processing on the wafer W in order from the bottom. The description will be continued with reference to FIG. 4 which is a schematic longitudinal side view of the processing block S2. The first unit block B1 and the second unit block B2 which are unit blocks for the pre-processing are similarly configured, and an antireflection film and a resist film are formed on the wafer W.

  The third unit block B3 and the fourth unit block B4, which are unit blocks for subsequent processing, are configured in the same manner, and form a protective film for immersion exposure and clean the back side of the wafer W. The fifth unit block B5 and the sixth unit block B6, which are unit blocks for development processing, have the same configuration, and perform development processing on the wafer W after immersion exposure. In this way, the unit block for performing the same processing on the wafer W is provided in two layers. For convenience, the first to fourth unit blocks B1 to B4 are called application blocks, and the fifth to sixth unit blocks B5 to B6 are called development blocks. In the first embodiment, the first and second unit blocks B1 and B2 correspond to the unit block for the former application, and the third and fourth unit blocks B3 and B4 correspond to the unit block for the latter application. To do.

  Each of the unit blocks B1 to B6 includes a liquid processing module, a heating module, a main arm A that is a transport unit for the unit block, and a transport region R1 in which the main arm A moves. In B, these arrangement layouts are similarly configured. In each unit block B, the main arm A carries the wafer W independently of each other and performs processing. The conveyance area R1 is a straight conveyance path extending from the carrier block S1 to the interface block S3. FIG. 1 shows the first unit block B1, and hereinafter, the first unit block B1 will be described as a representative.

  In the center of the first unit block B1, the transfer region R1 is formed. The liquid processing unit 21 and the shelf units U1 to U6 are arranged on the left and right of the transport area R1 when viewed from the carrier block S1 toward the interface block S3.

  The liquid processing unit 21 is provided with antireflection film forming modules BCT1 and BCT2 and resist film forming modules COT1 and COT2, and BCT1, BCT2, COT1, and COT2 from the carrier block S1 side to the interface block S3 side. Are arranged in this order. Each of the antireflection film forming module BCT and the resist film forming module COT includes a spin chuck 22, and the spin chuck 22 is configured to suck and hold the central portion of the back surface of the wafer W and to be rotatable about a vertical axis. In the figure, 23 is a processing cup, and the upper side is open. The processing cup 23 surrounds the periphery of the spin chuck 22 and suppresses the scattering of the chemical solution. When processing the wafer W, the wafer W is accommodated in the processing cup 23, and the center of the back surface of the wafer W is held by the spin chuck 22.

  The antireflection film forming modules BCT1 and BCT2 are provided with a nozzle 24 shared by these modules. In the figure, 25 is an arm that supports the nozzle 24, and 26 in the figure is a drive mechanism. The drive mechanism 26 moves the nozzles 24 in the arrangement direction of the processing cups 23 via the arms 25 and moves the nozzles 24 up and down via the arms 25. By the driving mechanism 26, the nozzle 24 moves between the processing cup 23 of the antireflection film forming module BCT1 and the processing cup 23 of the antireflection film forming module BCT2, and the wafer W transferred to each spin chuck 22 is transferred. A chemical solution for forming an antireflection film is discharged in the center. The supplied chemical solution spreads to the peripheral edge of the wafer W by the centrifugal force of the wafer W rotating around the vertical axis by the spin chuck 22, and an antireflection film is formed. Although not shown, each of the antireflection film forming modules BCT1 and BCT2 includes a nozzle that supplies a solvent to the peripheral end portion of the wafer W and removes an unnecessary film from the peripheral end portion.

  The resist film forming modules COT1 and COT2 are configured in the same manner as the antireflection film forming modules BCT1 and BCT2. That is, each of the resist film forming modules COT1 and COT2 includes a processing cup 23 and a spin chuck 22 for processing the wafer W, and the nozzle 24 is shared by the processing cup 23 and the spin chuck 22. However, a resist is supplied from the nozzle 24 instead of the chemical solution for forming the antireflection film. Here, each processing cup 23 is provided for each liquid processing module, and two liquid processing modules share one nozzle 24. However, one liquid processing module has one liquid processing module. It can also be seen that two nozzles 24 and two processing cups 23 are provided, and the nozzle 24 is shared by the two processing cups 23.

  The shelf units U1 to U6 are arranged in order from the carrier block S1 side to the interface block S3 side. Each shelf unit U <b> 1 to U <b> 5 is configured by, for example, two layers of heating modules that perform the heat treatment of the wafer W. Therefore, the unit block B1 includes 10 heating modules, and each heating module is HP100 to HP109. The shelf unit U6 is configured by laminating peripheral edge exposure modules WEE1 and WEE2 for performing peripheral edge exposure on the wafer W after resist application.

  The transfer arm R1 is provided with the main arm A1. The main arm A1 is configured to be movable back and forth, vertically movable, rotatable about a vertical axis, and movable in the length direction of the processing block S2, and transfers the wafer W between all the modules of the unit block B1. be able to.

  Other unit blocks will be described. The second unit block B2 is configured in the same manner as the first unit block B1 described above, and is provided with antireflection film forming modules BCT3 and BCT4 and resist film forming modules COT3 and COT4. Moreover, 10 units | sets of HP200-209 are provided as a heating module which comprises each shelf unit U1-U5. Two peripheral exposure modules, WEE3 and WEE4, are provided as the peripheral exposure module constituting the shelf unit U6.

  The third unit block B3 has substantially the same configuration as that of the first unit block B1, except that protective film forming modules TCT1 and TCT2 for immersion exposure are used instead of the antireflection film forming modules BCT1 and BCT2. It has. Further, backside cleaning modules BST1 and BST2 are provided instead of the resist film forming modules COT1 and COT2. The protective film forming modules TCT1 and TCT2 have the same configuration as that of the antireflection film forming module BCT except that a chemical solution for forming a water-repellent protective film is supplied to the wafer W. That is, each of the protective film forming modules TCT1 and TCT2 includes the processing cup 23 and the spin chuck 22 for processing the wafer W, and the nozzle 24 is shared by the two processing cups 23 and the spin chuck 22. .

  In the backside cleaning modules BST1 and BST2, instead of providing the nozzle 24 for supplying the chemical solution to the surface of the wafer W, the nozzles for supplying the cleaning solution to the backside and peripheral bevels of the wafer W and cleaning the backside of the wafer W are provided. Provided separately. Except for these differences, the configuration is the same as that of the antireflection film forming module BCT. Note that the back surface cleaning module BST may be configured to clean only the back surface side of the wafer W or only the bevel portion. Further, the shelf unit U6 of the third unit block B3 is configured by a heating module instead of the peripheral edge exposure module WEE. The heating modules of the shelf units U1 to U6 are HP300 to 311.

  The fourth unit block B4 is configured in the same manner as the third unit block B3 described above, and is provided with protective film forming modules TCT3 and TCT4 and back surface cleaning modules BST3 and BSTT4. The shelf units U1 to U6 of the fourth unit block B4 are configured by heating modules HP400 to 411.

  The fifth unit block B5 has substantially the same configuration as that of the unit block B1, except that development modules DEV1 to DEV4 are provided instead of the antireflection film forming module BCT1 and the resist film forming module COT. The developing module DEV is configured in the same manner as the resist film forming module COT except that a developing solution is supplied to the wafer W instead of the resist. Further, the shelf units U1 to U6 of the fifth unit block B5 are configured by heating modules HP500 to HP511.

  The sixth unit block B6 is configured in the same manner as the unit block B5, and development modules DEV5 to DEV8 are provided. Further, the shelf units U1 to U6 of the sixth unit block B6 are configured by heating modules HP600 to HP611.

  In the liquid processing unit 21 of each unit block, the chemical solution supplied to the wafer W is drained toward a drain path (not shown) provided on the lower side of the coating and developing device, for example. The viscosity of the chemical solution supplied to the wafer W by the antireflection film forming module BCT, the resist film forming module COT, and the protective film forming module TCT is higher than the viscosity of the developer. Accordingly, by disposing the developing module DEV in the upper unit block and disposing the other liquid processing modules in the lower unit block as in this embodiment, each chemical solution can be discharged quickly. As a result, it is possible to prevent the chemical liquid from volatilizing in each processing module, and thus it is possible to prevent the processing environment in the liquid processing unit 21 from changing.

  On the carrier block S1 side of the transport region R1, a shelf unit U7 straddling each unit block B is provided as shown in FIGS. Hereinafter, the configuration of the shelf unit U7 will be described. The shelf unit U7 is composed of a plurality of modules stacked on each other, and the hydrophobization modules ADH1 and ADH2 and the delivery modules CPL1 to CPL3 are provided at a height position accessible by the main arm A1 of the first unit block B1. ing. Hydrophobizing modules ADH3 and ADH4 and delivery modules CPL4 to CPL6 are provided at height positions accessible by the main arm A2 of the second unit block B2. In the description, the delivery module described as CPL includes a cooling stage for cooling the placed wafer W. The delivery module described as BU is configured to receive and retain a plurality of wafers W.

  Further, the hydrophobizing modules ADH1 to ADH6 supply a processing gas to the wafer W to improve the hydrophobicity of the surface of the wafer W. Thereby, peeling of each film from the wafer W is suppressed during immersion exposure. In particular, by improving the hydrophobicity of the bevel portion (peripheral end portion) of the wafer W, the surface of the wafer W is exposed even when the film of the peripheral end portion is removed by each liquid processing module and the surface of the wafer W is exposed. A process is performed so as to have a water repellent effect and to prevent peeling of each film from the peripheral edge during immersion exposure.

  Further, delivery modules CPL7 to CPL8 and CPL9 to CPL10 are provided at height positions where the main arms A3 and A4 of the unit blocks B3 and B4 can be accessed. Further, delivery modules BU1 and CPL0 are provided at a height position accessible by the delivery arm 13 of the carrier block S1. The delivery module BU1 includes five wafer W holders in the vertical direction in order to receive the wafer W transferred from the delivery arm 13 described above. The delivery module CPL0 is used to return the developed wafer W to the carrier C.

  Further, delivery modules CPL12 to CPL13 and BU2 are provided at a height position accessible by the main arm A5 of the unit block B5, and delivery modules CPL14 to CPL15 and BU3 are provided at positions accessible by the main arm A6 of the unit block B6. Is provided.

  An inspection module 31 is provided in the shelf unit U7. When the wafer W is unloaded from the unit blocks B5 and B6, the wafer W loaded into the inspection module 31 is transferred to the delivery modules BU2 and BU3. Wafers W that are not carried into the inspection module 31 are carried into the delivery modules CPL12 to CPL15. By properly using the delivery modules in this manner, the transfer of the wafers W is controlled so that the wafers W are returned to the carrier C in the order of the numbers, that is, in the order of delivery from the carrier C.

  In the processing block B2, a transfer arm 30 as a first transfer mechanism that can be moved up and down and moved back and forth is provided in the vicinity of the shelf unit U7, and the wafer W is transferred between the modules of the shelf unit U7. .

  The inspection module 31 will be described in more detail. According to the inspection mode selected as described later, the wafer W after the resist film formation or the wafer W after the development processing is carried into the inspection module 31. For the wafer W after the formation of the resist film, for example, the presence or absence of foreign matter on the surface of the resist film and the film thickness of the resist are inspected.

  When the developed wafer W is transferred to the inspection module 31, a post-development defect is inspected. This post-development defect is classified into a defect caused by the development process, a defect caused by the development process and the coating process. Examples of the defect caused by the development process include pattern collapse, line width abnormality, resist dissolution failure, post-development foam, and foreign matter. There are bridge defects between resist patterns and pattern defects (scum defects) due to the remainder of the dissolved product (scum). Defects resulting from the coating process and the development process include, for example, pattern collapse and a local abnormality in the line width of the pattern.

  In this embodiment, the presence or absence of each of these defects is set as an inspection item. The inspection module 31 transmits the obtained inspection data to the control unit 51 described later when each inspection mode described later is executed. A control unit 51 described later determines the presence or absence of each defect based on the inspection data.

  Next, the configuration of the interface block S3 will be described with reference to FIG. In the interface block S3, a shelf unit U8 is provided at a position where the main arms A1 to A6 of each unit block can be accessed. The shelf unit U8 includes a delivery module BU4 at a position corresponding to the third unit block B3 to the sixth unit block B6. The delivery module BU4 will be described later. Below the delivery module BU4, the delivery modules TRS and CPL16 to CPL18 are stacked on each other.

For example, four post-exposure cleaning modules PIR1 to PIR4 are stacked in the interface block S3. Each post-exposure cleaning module PIR is configured in the same manner as the resist film formation module COT, and supplies a chemical solution for removing the protective film and cleaning the wafer W surface instead of the resist.

  The interface block S3 is provided with three interface arms 32, 33, and 34. The interface arms 32, 33, and 34 are configured to be movable up and down and back and forth, and the interface arm 32 is configured to be movable in the horizontal direction. The interface arm 32 accesses the exposure apparatus S4, the transfer module TRS, and CPL16 to CPL18, and transfers the wafer W between them. The interface arm 33 accesses the transfer modules TRS, CPL16 to CPL18, and BU4, and transfers the wafer W between these modules. The interface arm 34 accesses the transfer module BU4 and the post-exposure cleaning modules PIR1 to PIR4, and transfers the wafer W between these modules. The interface arms 32 to 34 constitute a second delivery mechanism.

  The delivery module BU4 will be described with reference to FIG. The delivery module BU4 includes a support column 41 arranged in the circumferential direction. A wire 42 is stretched between one strut 41 and another strut 41, and the wires 42 and 42 intersect each other to form a set. A large number of sets of the wires 42 and 42 are provided at different height positions, and a circular support portion 43 is provided on the intersecting portion of the wires 42 and 42, for example. The wafer W is supported horizontally on the support unit 43. Although only five support portions 43 are shown in FIG. 6, many support portions 43 are provided upward so that the wafers W can be delivered to each level. The interface arms 33 and 34 and the main arms A3 to A6 can enter between the columns 41, and each of the entered arms transfers the wafer W to and from the support portion 43 by a lifting operation. The delivery modules BU1 to BU3 are also configured in the same manner as BU4, for example.

  Next, the control unit 51 provided in the coating and developing apparatus 1 will be described with reference to FIG. In the figure, reference numeral 52 denotes a bus, and a CPU 53 for performing various calculations is connected to the bus 52. Further, a program storage unit 57 that stores a processing program 54, a conveyance program 55, and a determination program 56 is connected to the bus 52. The processing program 54 outputs a control signal to each part of the coating / developing apparatus 1, and performs processing such as supply of chemicals and cleaning liquid and heating on each wafer W.

The transfer program 55 outputs a control signal to the main arms A1 to A6, the transfer arm 30 and the interface arms 32 to 34 of each unit block B1 to B6 according to the selected inspection mode and the determination result of the determination program 56, and the wafer W Control the transport. The determination program 56 determines whether there is an abnormality in the processing of the wafer W based on, for example, inspection data transmitted from the inspection module 31.

  A memory 61 is connected to the bus 52, and the memory 61 stores a transfer schedule of each wafer W and an inspection result by the inspection module 31. FIG. 8 shows an example of data stored in the conveyance schedule storage area 63 included in the memory 61. The data in this figure is a normal transfer schedule in which there is no abnormality in the wafer W in the inspection by the inspection module 31.

  In the transfer schedule storage area 63, the ID of the wafer W, the transfer destination module of the wafer W, and the order of the transferred modules are stored in association with each other. For example, the wafer A1 in the figure includes an antireflection film forming module BCT1, a heating module HP100, a resist film forming module COT1, a heating module HP101, a peripheral exposure module WEE1, a protective film forming module TCT1, a heating module HP300, a back surface cleaning module BST1, and a heating. It is conveyed to the module 500, the development module DEV1, and the heating module 501 in this order.

  In this example, the wafer W is transported in the order of the first unit block B1 → the third unit block B3 → the fifth unit block B5, or the second unit block B2 → the fourth unit block. It is set to be conveyed in the order of B4 → sixth unit block B6. When a certain wafer W is transferred to the first unit block B1, the next wafer W is transferred to the second unit block B2, and the next wafer W is further transferred to the first unit block B1. In this way, the wafers W continuously discharged from the carrier C are distributed to different unit blocks B alternately.

  Next, the inspection result storage area 60 included in the memory 61 will be described with reference to FIG. The inspection result storage area 60 is an area in which presence / absence of abnormality is stored for each inspection item described above for each wafer. For a wafer W having an abnormality, a module that has processed the wafer W and a unit block that has been processed are stored as will be described later.

  The inspection result storage area 60 stores a conveyance stop reference set for each inspection item. This transfer stop reference is a reference for stopping transfer of the subsequent wafer W to the unit block B or processing module that has processed the wafer W in which an abnormality has been detected. For each inspection item to be inspected by the inspection module 31 described above, the conveyance is stopped when the frequency of occurrence of an abnormality corresponds to this conveyance stop criterion.

  As an example, a conveyance stop criterion set for pattern collapse shown in FIG. 9 will be described. When the mode for stopping the transfer for each unit block B to be described later is selected, when the pattern collapse is detected for the first time on the inspected wafer W, the same unit block B as the unit block B through which the wafer W passes is then detected. When pattern collapse is detected in two or more wafers W out of the five wafers W that have been inspected, the transfer of the subsequent wafers W to the unit block B is stopped. In addition, when the mode for stopping the transfer is selected for each processing module, when the pattern collapse is detected for the first time on the inspected wafer W, the inspection is performed through the same processing module as the processing module through which the wafer W has passed. When pattern collapse is detected in two or more wafers W among the five wafers W, the transfer to the processing module is stopped. Of the five wafers W, if the number of wafers W in which pattern collapse has been detected is one or zero, after the five wafers W have been inspected, the pattern collapse has been detected again. If a pattern collapse is detected in two or more wafers W while the five wafers W are inspected, the transfer to the unit block or the processing module is stopped.

  Concerning resist dissolution failure and bubble after development in FIG. 9, the conveyance stop standard is set almost the same as pattern collapse. However, unlike the case of pattern collapse, these inspection items are inspected after a defect is detected once. When the pattern collapse is detected in one of the five wafers W to be transferred, the transfer to the unit block B is stopped. Further, for the scum defect of FIG. 9, processing for stopping the transfer to the unit block or processing module that has processed the wafer W is performed immediately after detection. Such a conveyance stop criterion is set for each inspection item described above. As a result, when the wafer W is accidentally defective, it is possible to prevent the transfer to the unit block or the processing module from being stopped.

  Returning to FIG. 7, the description will be continued. A setting unit 64 is connected to the bus 52. The setting unit 64 includes, for example, a keyboard, a mouse, a touch panel, and the like, and can set an inspection performed by the inspection module 31. FIG. 10 shows inspections and inspection modes that can be set from the setting unit 64. As the inspection, there are a post-development inspection C1 and a resist film formation inspection C2, and the user selects one of them. In the post-development inspection C1, the wafer W that has undergone the development process in the fifth or sixth unit block B5, B6 is transferred to the inspection module 31 and inspected. In the post-resist film formation inspection C2, the wafer W on which the resist film is formed in the first or second unit block B1, B2 is transferred to the inspection module 31 and inspected.

  When the post-development inspection C1 is selected, the user stops the transfer to the unit block through which the wafer W in which an abnormality has been detected passes, or stops the transfer of the wafer W for each processing module through which the wafer W has passed. The mode to be selected is further selected. There are three modes D1, D2, and D3 as modes for stopping conveyance to the unit block. In these modes D <b> 1 to D <b> 3, the unit blocks in which the transfer of the subsequent wafer W is stopped when an abnormality is detected in the wafer W are different. In mode D1, the transfer of the subsequent wafer W to the unit block B5 or B6 is stopped. In the mode D2, the transfer of the subsequent wafer W to any one of the unit blocks B1 and B2 is stopped in addition to any one of the unit blocks B5 and B6. In the mode D3, the transfer of the subsequent wafer W to any one of the unit blocks B1 and B2, any one of B3 and B4, and any of B5 and B6 is stopped.

  There are three types of modes D4, D5, and D6 as modes for stopping transfer to the wafer W for each processing module. In these modes D4 to D6, the processing module of which unit block to which the transfer of the subsequent wafer W is stopped when an abnormality is detected in the wafer W is different. In mode D4, the conveyance of the unit block to either processing module B5 or B6 is stopped. In mode D2, in addition to any processing module in the unit blocks B5 and B6, conveyance to any processing module in the unit blocks B1 and B2 is also stopped. In mode D3, transport to any processing module among unit blocks B1 and B2, transport to any processing module among B3 and B4, and transfer to any processing module among B5 and B6. The conveyance is stopped.

  Further, when the inspection C2 after resist film formation is selected, the user further selects one of a mode D7 for stopping the conveyance for each unit block B and a mode D8 for stopping the conveyance for each processing module. ing. Regarding correspondence with the claims, modes D1, D2, and D3 correspond to M2, M5, and M6, respectively. Modes D4, D5, and D6 correspond to M1, M3, and M4, respectively. Modes D7 and D8 correspond to N2 and N1, respectively.

  Further, the user can determine the wafer W to be inspected by designating the ID of the wafer W from the setting unit 64, for example. The bus 52 is connected to a display unit 65 composed of, for example, a display. The display unit 65 displays, for example, a transfer schedule and an inspection result for each inspection item for each wafer.

(Mode D3)
As an example in which the post-development inspection C1 is performed and the conveyance is stopped for each unit block, a case where the mode D3 is selected as a representative mode among the modes D1 to D3 will be described. First, the transport path of the wafer W in the coating and developing apparatus 1 will be described with reference to FIG. First, the wafer W is transferred from the carrier C by the transfer arm 13 to the transfer module BU1. When the wafer W is transferred from the transfer module BU1 to the first unit block B1, the wafer W is transferred to the hydrophobizing modules ADH1 and ADH2 by the transfer arm 30 as shown in FIG. , Transported to the delivery module CPL1.

  The main arm A1 is transferred to the delivery module CPL1, and the main arm A1 transfers the wafer W to the antireflection film forming modules BCT1, BCT2 → heating modules HP100 to 109 → delivery module CPL2 → resist film forming modules COT1, COT2 → heating modules HP100 to 109 → edge. The exposure modules WEE3, WEE4 → transfer module CPL3 are conveyed in this order, and an antireflection film and a resist film are formed on the wafer W in this order.

  The wafer W is transferred from the transfer module CPL3 to the transfer module CPL7 of the third unit block B3 by the transfer arm 30, and the main arm A3 transfers the wafer W to the protective film forming modules TCT1, TCT2 → heating modules HP300 to 311. → Transfer module CPL8 → Back surface cleaning modules BST1, BST2 → Transfer module BU4 are transferred in this order, a protective film is formed on the wafer W, and back surface cleaning is further performed.

  The wafer W is transferred by the interface arm 33 in the order of the delivery modules CPL16 to CPL18 → interface arm 32 → exposure apparatus S4, and is subjected to immersion exposure processing. After the exposure processing, the wafer W is transferred to the fifth unit block B5 in the interface arm 32 → the delivery module TRS → the interface arm 33 → the delivery module BU4 → the interface arm 34 → the post-exposure cleaning modules PIR1 to PIR4 → the interface arm 34 → the delivery module BU4. It is conveyed in the order of the height position.

  Subsequently, the wafer W is transferred and inspected by the main arm A5 in the order of heating modules HP500 to 511 → delivery module CPL12 → developing modules DEV1 to DEV4 → delivery module BU2 → delivery arm 30 → inspection module 31. The inspected wafer W is transferred in the order of the inspection module 31 → the transfer arm 30 → the transfer module BU1, and is returned from the transfer arm 13 to the carrier C. For the wafer W set so as not to be inspected by the inspection module 31, after processing by the development modules DEV 1 to DEV 4, the delivery modules CPL 14, 15 → the inspection module 31 → the delivery arm 30 → the delivery module CPL 0 → the delivery arm 13 → It is conveyed in the order of carrier C.

  When the wafer W is transferred from the buffer module BU1 to the second unit blocks B2, B4, and B6, the same processing as that for transferring the wafer W to the unit blocks B1, B3, and B5 is performed on the wafer W. FIG. 11B shows the transport path when passing through the unit blocks B 2 → B 4 → B 6 in this way.

  The transfer path will be briefly described below. The wafer W is transferred in the order of the transfer arm 30 → the hydrophobic treatment module ADH3, ADH4 → the transfer arm 30 → the transfer module CPL4. Subsequently, the main arm A2 removes the wafer W from the antireflection film forming modules BCT3 and BCT4 → heating modules HP200 to 209 → delivery module CPL5 → resist film forming module COT3, COT4 → heating modules HP200 to 209 → edge exposure modules WEE3 and WEE4. → Transport to delivery module CPL6. Thereafter, the wafer W is transferred in the order of the transfer arm 30 → the transfer module CPL9, and is protected by the main arm A4 with the protective film forming modules TCT3 and TCT4 → the heating modules HP400 to 411 → the transfer module CPL10 → the back surface cleaning modules BST3 and BST4 → the transfer. It is conveyed in the order of module BU4.

  In the interface block S3, the wafer W is transferred in the same manner as the wafer W transferred to the first and third unit blocks B, subjected to the exposure process and the post-exposure cleaning process, and further the sixth module of the transfer module BU4. It is transferred to the height position in the unit block B6. After that, the wafer W is heated by the main arm A6 by the heating module HP600 to 611 → delivery module CPL14 → developing module DEV5 to DEV8 → heating module HP600 to 611 → delivery module BU3 → delivery arm 30 → inspection module 31 → delivery arm 30 → delivery. It is transported in the order of module CPL0 → carrier C.

  Although the path when the wafer W is inspected by the inspection module 31 is shown, for the wafer W that is not an inspection target, development, post-heating processing, and delivery modules CPL14 and 15 → delivery arm 30 → delivery are performed in the above-described transport path. It is conveyed in the order of module CPL0 → delivery arm 13 → carrier C.

  With reference to FIG. 12, the process in which the transport to the unit block B is stopped by the control unit 51 will be described. While the wafer W is transported by the above-described path, the determination program 56 determines the presence / absence of abnormality for each of the inspection items described above based on the inspection data transmitted from the inspection module 31, and the determination result is an inspection result storage area. 60. If it is determined that there is an abnormality, the processing module and the unit block B that processed the wafer W in which the abnormality is detected are specified based on the transfer schedule in the transfer schedule storage area 63. Further, the wafer ID, the inspection item in which the abnormality occurred, the processing module and the unit block B are associated with each other and stored in the inspection result storage area 60 of the memory 61 (step S1).

  Subsequently, the determination program 56 determines, based on the past inspection history of the wafer W stored in the inspection result storage area 60, whether or not the transfer stop criterion described above is set for the inspection item. (Step S2). For example, when the abnormal inspection item is pattern collapse, the wafer W that has passed the same unit block B as described above is inspected on five wafers W after the pattern collapse first occurs. Whether or not pattern collapse has occurred in two or more wafers W is determined during the process. If it is determined that the transport stop criterion is not met, the processing is continued by the unit blocks B1 to B6.

  If it is determined that the transfer stop criterion is met, the processing of the wafer W and the main arm A by each processing module of the unit block B5 or B6 that has processed the wafer W in which an abnormality has been detected in step S1. Stop the operation. Then, the transfer program 55 rewrites the transfer schedule so that the process is performed using the unit block of the unit blocks B5 and B6 whose operation of the processing module and the main arm A is not stopped. Then, according to the transfer schedule, the wafer W is transferred and processed (step S3).

  FIGS. 13A and 13B show a transfer path when the transfer of the wafer W to the fifth unit block B5 is stopped as an example. As shown in FIG. All the wafers W that have been processed in the unit blocks B1 to B4 are loaded into the sixth unit block B6. Contrary to this example, when the transfer to the sixth unit block B6 is stopped, all the wafers W processed in the first to fourth unit blocks B1 to B4 are in the fifth unit block B5. It is carried in.

  In this way, the processing is continued using only one development block. Thereafter, when an abnormality is detected in the wafer W, the determination program 56 determines the processing module and unit block that processed the wafer W in which the abnormality was detected based on the transfer schedule in the transfer schedule storage area 63 as in step S1. The wafer ID is identified and the inspection item that has become abnormal is associated with the processing module and the unit block B and stored in the memory 61 (step S4).

  Subsequently, the determination program 56 refers to the inspection history of the wafer W after the transfer to the unit block B5 or B6 is stopped, and whether or not the determination program 56 meets the transfer stop criterion for the unit block set in the inspection item. Is determined (step S5). If it is determined that it does not correspond, the processing is continued by the unit blocks B1 to B4 and B5 or B6.

  If it is determined that the conveyance stop criterion is met, the determination program 56 determines that the inspection item that has become abnormal is determined to be abnormal when the unit block B5 or B6 is stopped in steps S2 and S3. (Step S6). If it is determined in step S6 that the inspection items are the same, the determination program 56 further passes the coating block through which the wafer W determined to be abnormal in step S1 and the wafer W determined to be abnormal in step S4 have passed. It is determined whether or not the coating block matches (step S7).

  If it is determined in step S7 that the coating blocks match, the abnormality in the inspection item is considered to be caused by the processing in the coating block. Therefore, the processing of the wafer W by the coating block and the main arm A Stop the operation. That is, the processing of the wafer W in any one of the unit blocks B1 and B3, B2 and B4 is stopped. Furthermore, the conveyance program 55 rewrites the conveyance schedule so as to perform processing using the unit block that is operating among the unit blocks B1 to B4. Then, according to the transfer schedule, the wafer W is transferred and the processing is continued (step S8).

  For example, if the inspection item abnormality continues from the state where the conveyance to the unit block B5 is stopped as shown in FIG. 13 when the conveyance to the unit block B5 is stopped, the above steps S6 to S8 are performed. The conveyance to the unit blocks B1 and B3 is stopped. Then, all the wafers W are transferred in order along the path of the unit blocks B 2 → B 4 → B 6 shown in FIG. 9B.

  If it is determined in step S6 that the inspection item is abnormal when the development block is stopped or it is determined in step S7 that the abnormal application block is different, for example, Conveyance to each unit block in operation is continued, and the inspection items determined to meet the conveyance stop criteria in step S5 are displayed on the display unit 65 (step S9).

  When the modes D1 and D2 are selected, processing steps substantially similar to the above-described mode D3 are performed. The difference will be described. When the mode D1 is selected, the above steps S1 to S3 are performed. Accordingly, the transfer of the wafer W to the unit blocks B1 to B4 is not stopped. Further, when the mode D2 is selected, the steps S1 to S9 are performed, but the transfer of the wafer W to the unit blocks B3 and B4 is not stopped in step S8.

(Mode D7)
Next, a case will be described in which the inspection C2 post-resist film formation C2 is set to be performed, and the mode D7 for stopping conveyance for each unit block is selected. As a transfer path of the wafer W when the inspection C2 is performed after the resist film is formed, the wafer W after finishing the resist coating process and loaded into the delivery modules CPL4 and CPL6 is carried into the inspection module 31 by the delivery arm 30. After being inspected by the inspection module 31, it is carried into the third and fourth unit blocks via the delivery modules CPL9 and CPL12. The wafer W after the development processing is returned to the carrier C in the order of delivery modules CPL13, CPL15 → delivery module BU1. Excluding such a difference, the wafer W is transferred in the same manner as when the post-development inspection C1 is executed.

  Even when the mode D7 is executed, the abnormality of the wafer W is inspected for each inspection item as in the case of the post-development inspection mode, and the processes of steps S1 to S2 are executed. If it is determined in step S2 that the conveyance stop criterion is not met, the processing is continued. If it is determined that the transfer stop criterion is met, the processing of the wafer W by the processing modules of the unit block B1 or B2 that has processed the wafer W in which an abnormality has been detected and the operation of the main arm A Stop. Then, the transfer program 55 rewrites the transfer schedule so that the process is performed using the unit block of which the operation of the processing module and the arm is not stopped among the unit blocks B1 and B2.

  FIG. 14 shows, as an example, a transfer path when transfer of the wafer W to the second unit block B2 is stopped. As shown in FIG. 14, all subsequent wafers W are transferred from the carrier C to the first unit block. It is carried into block B1. Then, the first unit block B1 is distributed to the third and fourth unit blocks B3 and B4. Conversely, when the transfer to the first unit block B1 is stopped, all subsequent wafers W are transferred from the carrier C to the first unit block B1.

(Mode D6)
Next, as an example in which the post-development inspection C1 is performed and the conveyance is stopped for each processing module, a case where the mode D6 is selected as a representative of the modes D4 to D6 will be described. Hereinafter, the flow when the mode D6 is executed will be described with reference to FIG. 15, focusing on the differences from the mode D3. When an abnormality is detected in the wafer W, a processing module that processes the wafer W is specified in the unit blocks B5 and B6 based on the transfer schedule. The wafer ID is associated with the abnormal inspection item and the processing module is stored in the memory 61 (step S11). Subsequently, the determination program 56 determines, for each processing module specified in step S11, whether or not each processing module meets the conveyance stop criterion based on the data in the inspection result storage area 60 (step S12). .

  If it is determined that none of the processing modules meets the transfer stop criterion, the transfer of the wafer W to each processing module is continued. If there is a processing module corresponding to the transfer stop criterion, the processing of the wafer W in the processing module is stopped (step S13). The transfer schedule is set so that transfer is performed except for the modules whose processing is stopped in this way, and the transfer and processing of the wafer W are continued.

  When the processing of the wafer W is continued, and then an abnormality occurs in the wafer W, the determination program 56, in the same way as in step S11, determines the abnormal wafer ID, the abnormal inspection item, and the development block. The processing module that processes the wafer W is associated with each other and stored in the inspection result storage area 60 (step S14). Then, as in step S12, the determination program 56 determines whether there is a module that meets the conveyance stop criterion for each processing module specified in step S14, based on the data in the inspection result storage area 60. (Step S15).

  If there is an inspection item corresponding to the conveyance stop criterion, the determination program 56 determines whether or not the inspection item is the same inspection item as the inspection item whose conveyance to the processing module is stopped in step S13. Determination is made (step S16). If it is determined that the inspection items are not the same, the processing from step S13 is executed, and the transport to the processing module corresponding to the transport stop criterion is stopped in the development block.

  If it is determined in step S16 that the inspection items are the same, the determination program 56 specifies a processing module that has processed the wafer W in which the abnormality is detected in step S14 in the unit blocks B1 to B4 based on the transfer schedule. Then, the processing of the wafer W in the identified processing module is stopped. Further, a transfer schedule is set so that transfer is performed except for the processing module in which the process is stopped in this manner, and the transfer and processing of the wafer W are continued (step S17).

  Here, a supplementary explanation will be given for a processing module that stops conveyance when this mode D6 is executed. For example, when the pattern collapse is detected on the wafer W in the above step S11 and the wafer W is processed by the development module DEV1 and the heating module 600, the inspection result of the wafer W that has been processed by the DEV1 in the past is referred to. Then, it is determined whether or not each processing module meets the conveyance stop criterion. Further, the inspection result of the wafer W that has been processed by the heating module 600 in the past is referred to, and it is determined whether or not the transfer stop criterion is met. And among the DEV1 and the heating module 600, about the process module determined to correspond to a conveyance stop reference | standard, conveyance to the said process module stops. In this way, it is determined for each processing module whether the transport stop criterion is met.

  However, the developing modules DEV1 and DEV2, DEV3 and DEV4, DEV5 and DEV6, DEV7 and DEV8 share the nozzle 24, respectively. As described above, when the conveyance stop to one DEV among the DEVs sharing the nozzle 24 is determined, the transfer to the other DEV is also determined to be stopped. Therefore, when the transport to DEV1 is stopped, the transport to DEV2 is also stopped.

  Further, regarding the antireflection film forming module BCT, the resist film forming module COT, and the protective film forming module TCT, two units provided in each unit block share a nozzle. Therefore, in order to prevent the processing in each unit block from being stopped, the transfer to these liquid processing modules is not stopped in step S17. Instead, each liquid processing module that has processed the wafer W corresponding to the stop criterion in step S15 The inspection items that become abnormal are associated with each other and displayed on the display unit 65.

  By the way, when the modes D4 and D5 are selected, processing steps substantially similar to the above-described mode D6 are performed. The difference will be described. When the mode D4 is selected, the above steps S11 to S13 are performed. Accordingly, the conveyance of the unit blocks B1 to B4 to the processing module is not stopped. Further, when the mode D5 is selected, the above steps S11 to S17 are performed, but the transport of the unit blocks B3 and B4 to the processing module is not stopped in step S17.

(Mode D8)
Next, the case where the mode D8 for stopping the transfer of the wafer W is selected for each processing module is set so that the post-resist inspection C2 is performed, and the difference from the mode D6 selection is mainly described. To do. When the mode D8 is executed, the wafer W is transferred in the same manner as when the mode D7 is executed. That is, the wafer W that has been processed in the unit blocks B 1 and B 2 is transferred to the inspection module 31. If an abnormality is detected in the wafer W, it is determined whether or not the processing stop standard is satisfied for each processing module that has processed the wafer W in the same manner as in the mode D6. In this case, the conveyance to the processing module is stopped. In this mode D8, since the wafer W after application of the resist is inspected, the processing modules whose conveyance is stopped are the processing modules of the unit blocks B1 and B2. The conveyance to the processing module is stopped based on the rule described in mode D6. That is, the antireflection film forming module BCT and the resist film forming module COT continue to be transported to these processing modules even if they meet the transport stop criterion.

  According to this coating and developing apparatus 1, modules for forming an antireflection film and a resist film are arranged in the double unit blocks B1 and B2, and a film on the upper layer side of the resist film and a process before exposure, for example, Modules for cleaning the back surface of the substrate are arranged in the duplicated unit blocks B3 and B4, and unit blocks B5 and B6 for development processing that are duplicated in the vertical direction are further laminated on these unit blocks B1 to B4. . For this reason, an installation area can be made small, setting the depth dimension of a processing block to a moderate magnitude | size. Also, because each unit block is duplicated, use the other unit block even when an abnormality occurs in one unit block, or when maintenance such as repairs, periodic inspections, and adjustment checks are performed at the time of failure. And the reduction in operating efficiency can be suppressed. Then, when an abnormality is detected in the wafer W in the inspection by the inspection module 31 after development, a mode in which the wafer W is transferred to a unit block other than the unit block through which the previous wafer W has passed is based on the data stored in the memory 61. In addition, since a mode for transferring the subsequent wafer W to a module other than the module through which the previous substrate has passed is prepared, the operation rate, the number of wafers W to be kept behind, It is possible to respond flexibly according to the situation, such as abnormal conditions. Further, in this example, the user can select modes D1 to D6 to select a unit block that includes a unit block that stops transfer when an abnormality occurs in the wafer W and a module that stops transfer. . Further, the coating and developing apparatus 1 also includes modes D7 and D8 for inspecting the wafer W after the resist coating and stopping the transfer to the unit block or processing module that has processed the wafer W. By providing these modes D1 to D8, the user can take more flexible measures depending on the situation when an abnormality is detected. Duplexing may be performed by configuring unit blocks so that the same processing can be performed on the wafer W, and is not limited to the same layout and number of modules.

  Further, in the above modes D2 and D3, by stopping the conveyance to the developing block and the conveyance block to the coating block in stages, it is possible to suppress the conveyance to the coating block that does not need to stop the conveyance. Therefore, it is possible to more reliably suppress a decrease in the operating efficiency of the coating and developing apparatus 1. However, it is not limited to stopping conveyance to each unit block step by step. For example, when a development defect including a coating process factor such as pattern collapse or local line width abnormality is detected on the wafer W during execution of modes D2 and D3, the wafer W is processed and transferred to the development block and the coating block. May be stopped simultaneously. Similarly, in the above modes D5 and D6, the transport of the developing block to the processing module and the transport of the coating block to the processing module are stopped in stages, so that the operation of the coating and developing apparatus 1 can be performed more reliably. Although a reduction in efficiency can be suppressed, the conveyance to these processing modules may be stopped collectively.

  In addition, when the modes D4 to D6 are executed, the stop of the transfer of the wafer W may be controlled for each processing cup for the liquid processing modules BCT, COT, TCT, BST, and DEV. That is, the transfer of the wafer W to the processing cup 23 that has processed the wafer W in which an abnormality has occurred in each of these processing modules is stopped, and the wafer to the processing cup 23 sharing the nozzle 24 with the processing cup 23 is stopped. The conveyance of W is continued. In addition, when it is determined that BCT, COT, TCT, and BST are stopped to be transported to these liquid processing modules, instead of continuing the transport to these liquid processing modules, the unit block including the liquid processing module is transferred to The transfer of the wafer W may be stopped. Further, when the transfer of the wafer W is stopped for each processing cup 23 as described above, in order to adjust the number of wafers W processed in the apparatus, for example, when one processing cup 23 of one BCT is not used. The processing cup 23 of one COT of the same unit block can be set not to be used. Similarly, for example, when one COT processing cup 23 is not used, one BCT of the same unit block can be set not to be used. Further, even in the unit block configured in the same manner as the unit block in which the transport of the COT and the BCT to the processing cup 23 is stopped, the transport to one processing cup 23 of the COT and one processing cup 23 of the BCT is performed. The number of processed wafers W may be adjusted by stopping.

  In the coating and developing apparatus 1, the interface block S3 may be configured as shown in FIG. In this example, the wafer W is transferred to the unit blocks B1, B2 → B3, B4 via the interface block S3. The difference from the interface block S3 shown in FIG. 5 will be described. Delivery modules BU5 and BU6 are provided at height positions corresponding to the unit blocks B1 and B2, respectively. Delivery modules BU7 and BU8 are provided at a height position corresponding to the unit block B3. Delivery modules BU9 and BU10 are provided at height positions corresponding to the unit block B4. In addition, delivery modules TRS1 and TRS2 are provided at height positions corresponding to the unit blocks B5 and B6, respectively. A delivery module BU11 is also provided. Each delivery module is stacked on top of each other.

  The wafers W that have been processed in the unit blocks B1 and B2 are transferred to the transfer modules BU5 and BU6, respectively, and further transferred to the transfer modules BU7 and BU8 by the interface arm 33. The wafers W transferred to the transfer modules BU7 and BU8 are transferred to the unit blocks B3 and B4 by the transfer arms A3 and A4, respectively, and are processed. The wafers W that have been processed in the unit blocks B3 and B4 are transferred to the transfer modules BU9 and BU10, and transferred to the transfer modules CPL14 and CPL15 by the interface arm 33. Thereafter, the wafer W is transferred in the order of the exposure apparatus S4 → the transfer module TRS as in the example of FIG. 5, and then transferred to the transfer module TRS → the interface arm 33 → the transfer module BU11 → the transfer modules TRS1 and TRS2. It is conveyed to unit blocks B5 and B6 by arms A5 and A6.

  In the above-described embodiment, a protective film may be formed by TCT1 to TCT4, and the wafer W heated by the heating modules HP300 to 311 or HP400 to 411 may be transferred to the inspection module 31 and inspected. In that case, for example, the wafer W in which abnormality is detected is stopped to be transferred to the unit block in which the antireflection film, the resist film, and the protective film are formed on the wafer W, or the wafer W included in the unit block is removed. Stop transport to the processed module.

  In the above example, the TCT may be a module that forms an antireflection film on the upper layer of the resist film instead of the protective film forming module. In addition, the hydrophobization treatment in the hydrophobization processing module ADH may be performed after the formation of the antireflection film and before the resist application, instead of being performed before the formation of the antireflection film by the antireflection film formation module BCT. After resist application, it may be performed before the wafer W is transferred to the unit blocks B3 and B4. Further, the stacking order of the unit blocks is not limited to this example. For example, the fifth and sixth unit blocks that perform the development process are provided below the first and second unit blocks that form the resist film. Also good.

(Second Embodiment)
Next, a processing block S5 of the coating and developing apparatus according to the second embodiment will be described with reference to FIG. In the processing block S5, unit blocks each including an antireflection film forming module BCT, a resist film forming module COT, and a protective film forming module TCT are provided in duplicate. The unit blocks B1 to B4 of the processing block S5 are configured in the same manner as the unit blocks B1 to B4 of the processing block S2 except that the mounted liquid processing modules are different. The unit blocks B1, B2, B3, and B4 of the processing block S5 include antireflection film forming modules BCT1 to BCT4, antireflection film forming modules BCT5 to BCT8, resist film forming modules COT1 to COT4, and resist film forming modules COT5 to COT8, respectively. Is provided. Each of these liquid processing modules includes a processing cup 23 as in the liquid processing module of the processing block S2 described above. Then, two processing cups 23 provided so as to be adjacent to each other from the carrier block S1 side to the interface block S3 side share a nozzle 24 for supplying a processing liquid to the wafer W.

  The unit blocks B1 and B2 are configured similarly to each other, and the unit blocks B3 and B4 are configured similarly to each other. The wafer W is transferred between the unit blocks in the same manner as the processing block S2. That is, the wafer W that has been processed in the unit blocks B1 and B2 is transferred to the unit blocks B3 and B4 via the delivery module CPL and the delivery arm 30 of the shelf unit U7. Moreover, it passes to unit block B3-B6 and exposure apparatus S4 via the delivery module of shelf unit U8.

  By configuring the processing block S5 in this way, when the post-development inspection C1 described above is performed, the wafer W is in the unit block B1, B2 → unit block B3, B4 → exposure apparatus S4 → unit block B5, B6 → inspection. It is transported in the order of modules 31 for processing. Further, when the inspection C2 after the resist application is performed, the wafer W is transferred and processed in the order of the unit blocks B1, B2 → unit blocks B3, B4 → inspection module 31, and then passes through the shelf unit U7 and the unit blocks B3, B4. Then, it is carried into the interface block S3, and is conveyed in the order of the exposure apparatus S4 → unit blocks B5 and B6 to be processed.

  Also in the coating and developing apparatus 1 provided with the processing block S5, the user can select each of the inspection modes D1 to D8 as described above, for example. When an abnormality is detected in the wafer W, the selected mode is set. Accordingly, the transfer of the wafer W can be stopped for each unit block or for each processing module. Further, in this processing block S5, since two pairs of processing cups 23 that share the nozzle 24 are provided in each layer, the mode D4 to D6 or D8 in which the conveyance is stopped for each module is selected and the liquid processing module is transferred to. When the transfer stop is determined, for example, the wafer W is distributed to a liquid processing module that does not share the nozzle 24 in the same layer as the liquid processing module that has been stopped. That is, for example, when COT 1 is stopped, the subsequent wafer W is distributed to COT 3 and COT 4 that do not share the nozzle 24.

  In the second embodiment, similarly to the first embodiment, even if the unit block or module that processed the wafer W in which an abnormality has been detected stops, the processing of the wafer W is continued in another unit block or module. . On the other hand, maintenance such as failure repair, periodic inspection, and adjustment confirmation of the stopped unit block or module can be performed, so that a decrease in throughput can be suppressed.

(Third embodiment)
Still another example of the processing block will be described with reference to the processing block S6 shown in FIG. A difference from the processing block S5 described above is that the unit blocks are stacked in eight stages. In the processing block S6, the unit blocks E1 to E4 are configured similarly to the unit blocks B1 to B4 of the processing block S5. On the unit block E4, unit blocks E5 and E6 having the same configuration are stacked, and these unit blocks E5 and E6 are provided with protective film forming modules TCT1 to TCT4 and TCT5 to TCT8, respectively. . The unit blocks E5 and E6 are configured in the same manner as the other unit blocks E1 to E4 except that the liquid processing modules are different. Unit blocks E7 and E8 are stacked on the unit block E6, and these unit blocks E7 and E8 are configured similarly to the unit blocks B5 and B6 of the processing block S2 in the first embodiment. In the third embodiment, the unit blocks E1 and E2 correspond to the application block for the former application, and the unit blocks E3 and E4 correspond to the unit block for the latter application.

  The wafer W can move between the unit blocks E1 to E6 in the processing block S6 via each delivery module CPL and delivery arm 30 of the shelf unit U7. Further, the wafer W can be transferred between the unit blocks E5 to E8 and the exposure apparatus S4 via the transfer modules of the shelf unit U8 and the interface arms 32 to 34. Thus, when performing post-development inspection C1, the wafer W is transferred in the order of unit block E1, E2 → unit block E3, E4 → unit block E5, E6 → exposure apparatus S4 → unit block E7, E8 → inspection module 31. The When performing inspection C2 after resist coating, the wafer W is transferred in the order of unit blocks E1, E2 → unit blocks E3, E4 → inspection module → unit blocks E5, E6 → exposure apparatus S4 → unit blocks E7, E8. Get processed.

  The coating and developing apparatus provided with the processing block S6 is also provided with various modes for controlling the transfer of the wafer W according to the inspection result of the inspection module 31, as in the first and second embodiments. Inspection after development or after resist application can be performed before exposure. FIG. 19 shows inspection types and modes that can be selected from the setting unit 64 of the coating and developing apparatus. The post-development inspection C1 of the coating and developing apparatus includes, for example, modes F1 to F6 corresponding to the above-described modes D1 to D6, respectively.

  In mode F1, the transfer of the wafer W to the unit block that has processed the abnormal wafer W among the unit blocks E7 and E8 is stopped. In mode F2, the transfer of the wafer W to the unit block that has processed the abnormal wafer W among the unit blocks E1 to E4, E7, and E8 is stopped. In mode F3, the transfer of the wafer W to the unit block that has processed the abnormal wafer W among the unit blocks E1 to E8 is stopped. In mode F4, the transfer of the wafer W to the module of the unit block that has processed the abnormal wafer W among the unit blocks E7 and E8 is stopped. In mode F5, the transfer of the wafer W to the module of the unit block that has processed the abnormal wafer W among the unit blocks E1 to E4, E7, and E8 is stopped. In mode F6, the transfer of the wafer W to the module of the unit block that has processed the abnormal wafer W among the unit blocks E1 to E8 is stopped.

  Further, the post-resist coating inspection C2 of the coating and developing apparatus 1 includes, for example, modes F7 to F8 corresponding to the above-described modes D7 to D8, respectively. In mode F7, for the unit blocks E1 to E4, the transfer of the subsequent wafer W to the unit block that has processed the abnormal wafer W is stopped. In mode F8, for the unit blocks E1 to E4, the transfer of the subsequent wafer W to the processing module that has processed the abnormal wafer W is stopped.

  Even when the processing block S6 is formed in this way, the processing of the wafer W can be continued while maintaining the unit block or processing module in which the transfer of the wafer W is stopped. Similar effects can be obtained.

W Wafers BCT1 to BCT4 Antireflection film forming modules BST1 to BST4 Back surface cleaning modules COT1 to COT4 Resist film forming modules DEV1 to DEV8 Development module HP Heating modules TCT1 to TCT4 Protective film forming module S1 Carrier block S2 Processing block S3 Interface block WEE Edge exposure Module 1 Coating and developing device 30 Delivery arm 51 Control unit 55 Conveying program 56 Determination program 61 Memory 64 Setting unit A1 to A6 Main arm

Claims (8)

After the substrate carried into the carrier block by the carrier is transferred to the processing block and a coating film including a resist film is formed in the processing block, the substrate is passed through an interface block located on the opposite side of the processing block from the carrier block. In the coating and developing apparatus, the substrate after exposure that has been transferred to the exposure apparatus and returned through the interface block is developed in the processing block and transferred to the carrier block.
a) The processing block comprises:
A liquid processing module that supplies chemicals to the substrate to form the previous thin film among the thin films required for exposure processing, a heating module that heats the substrate, and a carrier block and interface for transporting the substrate between these modules A unit block for transporting a unit block that moves on a straight transport path connecting the blocks, and a unit block for pre-stage application as a first unit block for pre-stage application and a unit block for second pre-stage application up and down Duplicated and laminated with each other,
A heating module that heats the substrate, and a liquid processing module that is stacked on the unit block for the former application and supplies a chemical solution onto the former thin film among the thin films necessary for the exposure process to form the latter thin film. And a unit block transport unit for moving on a linear transport path connecting the carrier block and the interface block for transporting the substrate between these modules, a unit block for post-coating comprising a first post-coating unit block A unit block for use and a unit block for second subsequent application, which are vertically doubled and laminated together,
For a unit block that moves on a straight conveyance path that is stacked on the unit block for the previous stage application and that supplies a developer to the substrate, a heating module that heats the substrate, and a carrier block and an interface block A development processing unit block including a first development processing unit block and a second development processing unit block that are vertically doubled and stacked on each other. When,
b) one of the preceding thin film and the subsequent thin film is a thin film including a resist film;
c) a delivery unit that is provided on the carrier block side for each unit block and delivers the substrate to and from the transport mechanism of each unit block;
d) The substrate is distributed and delivered from the carrier to the delivery part corresponding to each unit block for the preceding application, and the substrate is returned to the carrier from the delivery part of each unit block for the development process, and each unit for the preceding application is provided. A first delivery mechanism for delivering the substrate processed in the block to the delivery unit corresponding to each unit block for subsequent coating;
e) a second delivery mechanism for receiving the pre-exposure substrate processed in the processing block and distributing and delivering the post-exposure substrate to a unit block for development processing;
f) a post-development inspection module for inspecting the substrate after the development process;
g) a storage unit for storing data of a route along which a substrate to be inspected is transferred before being inspected by the inspection module;
h) a control unit provided to carry a subsequent substrate based on data stored in the storage unit when an abnormality is detected in the substrate in the inspection by the inspection module;
With
The control unit identifies a module in which a substrate in which an abnormality is detected is processed in a unit block for development processing, and transports a subsequent block to a module other than the identified module. Control the operation of the mechanism ,
The unit block for the first-stage application forms a resist film by supplying a chemical solution to the substrate to form a lower-layer antireflection film and a resist solution on the antireflection film. A coating module, a heating module that heats the substrate, and a transport mechanism for the unit block that moves on a straight transport path that connects the carrier block and the interface block in order to transport the substrate between these modules,
The unit block for the subsequent coating includes a liquid processing module for an upper layer that supplies a chemical solution to the substrate on which the resist film is formed to form an upper layer side film, and a substrate on which the resist film is formed before the exposure. A pre-processing module for performing pre-processing, a heating module for heating a substrate, and a transport mechanism for a unit block that moves on a straight transport path connecting the carrier block and the interface block to transport the substrate between these modules And comprising
A liquid processing module for an upper layer for supplying a chemical solution to a substrate on which a resist film is formed to form an upper layer side film, and a pretreatment for performing a pretreatment before exposure on a substrate on which a resist film is formed A module, a heating module that heats the substrate, and a transport mechanism for a unit block that moves on a straight transport path that connects the carrier block and the interface block to transport the substrate between these modules. The unit block is vertically doubled as a first upper layer unit block and a second upper layer unit block, and is laminated on the unit block for subsequent coating. Application and development equipment. After the substrate carried into the carrier block by the carrier is transferred to the processing block and a coating film including a resist film is formed in the processing block, the substrate is passed through an interface block located on the opposite side of the processing block from the carrier block. In the coating and developing apparatus, the substrate after exposure that has been transferred to the exposure apparatus and returned through the interface block is developed in the processing block and transferred to the carrier block.
a) The processing block comprises:
A liquid processing module that supplies chemicals to the substrate to form the previous thin film among the thin films required for exposure processing, a heating module that heats the substrate, and a carrier block and interface for transporting the substrate between these modules A unit block for transporting a unit block that moves on a straight transport path connecting the blocks, and a unit block for pre-stage application as a first unit block for pre-stage application and a unit block for second pre-stage application up and down Duplicated and laminated with each other,
A heating module that heats the substrate, and a liquid processing module that is stacked on the unit block for the former application and supplies a chemical solution onto the former thin film among the thin films necessary for the exposure process to form the latter thin film. And a unit block transport unit for moving on a linear transport path connecting the carrier block and the interface block for transporting the substrate between these modules, a unit block for post-coating comprising a first post-coating unit block A unit block for use and a unit block for second subsequent application, which are vertically doubled and laminated together,
For a unit block that moves on a straight conveyance path that is stacked on the unit block for the previous stage application and that supplies a developer to the substrate, a heating module that heats the substrate, and a carrier block and an interface block A development processing unit block including a first development processing unit block and a second development processing unit block that are vertically doubled and stacked on each other. When,
b) one of the preceding thin film and the subsequent thin film is a thin film including a resist film;
c) a delivery unit that is provided on the carrier block side for each unit block and delivers the substrate to and from the transport mechanism of each unit block;
d) The substrate is distributed and delivered from the carrier to the delivery part corresponding to each unit block for the preceding application, and the substrate is returned to the carrier from the delivery part of each unit block for the development process, and each unit for the preceding application is provided. A first delivery mechanism for delivering the substrate processed in the block to the delivery unit corresponding to each unit block for subsequent coating;
e) a second delivery mechanism for receiving the pre-exposure substrate processed in the processing block and distributing and delivering the post-exposure substrate to a unit block for development processing;
f) a post-development inspection module for inspecting the substrate after the development process;
g) a storage unit for storing data of a route along which a substrate to be inspected is transferred before being inspected by the inspection module;
h) a control unit provided to carry a subsequent substrate based on data stored in the storage unit when an abnormality is detected in the substrate in the inspection by the inspection module;
With
The control unit specifies a development processing unit block on which a substrate in which an abnormality has been detected is processed, and transports the subsequent substrate to a development processing unit block other than the specified development processing unit block. Control the operation of the second delivery mechanism ,
The unit block for the first-stage application forms a resist film by supplying a chemical solution to the substrate to form a lower-layer antireflection film and a resist solution on the antireflection film. A coating module, a heating module that heats the substrate, and a transport mechanism for the unit block that moves on a straight transport path that connects the carrier block and the interface block in order to transport the substrate between these modules,
The unit block for the subsequent coating includes a liquid processing module for an upper layer that supplies a chemical solution to the substrate on which the resist film is formed to form an upper layer side film, and a substrate on which the resist film is formed before the exposure. A pre-processing module for performing pre-processing, a heating module for heating a substrate, and a transport mechanism for a unit block that moves on a straight transport path connecting the carrier block and the interface block to transport the substrate between these modules And comprising
A liquid processing module for an upper layer for supplying a chemical solution to a substrate on which a resist film is formed to form an upper layer side film, and a pretreatment for performing a pretreatment before exposure on a substrate on which a resist film is formed A module, a heating module that heats the substrate, and a transport mechanism for a unit block that moves on a straight transport path that connects the carrier block and the interface block to transport the substrate between these modules. The unit block is vertically doubled as a first upper layer unit block and a second upper layer unit block, and is laminated on the unit block for subsequent coating. Application and development equipment.   The control unit identifies a module in which a substrate in which an abnormality has been detected is processed in a unit block for pre-application, and transports a subsequent block to a module other than the identified module. 3. The coating and developing apparatus according to claim 1, wherein the operation of the mechanism is controlled.   The control unit identifies a module in which a substrate in which an abnormality has been detected has been processed in a development processing unit block, a preceding coating unit block, and a subsequent coating unit block, and identifies a subsequent substrate. 4. The coating and developing apparatus according to claim 1, wherein the operation of the transport mechanism for the unit block is controlled so as to transport to a module other than the module.   The control unit identifies a development processing unit block and a pre-application unit block on which a substrate in which an abnormality has been detected has been processed, and transports the subsequent substrate to a unit block other than the identified unit block. 5. The coating and developing apparatus according to claim 1, wherein operations of the first delivery mechanism and the second delivery mechanism are controlled.   The control unit identifies a development processing unit block in which a substrate in which an abnormality has been detected is processed, a unit block for pre-coating, and a unit block for post-coating, and sets subsequent substrates other than the specified unit block. 6. The coating and developing apparatus according to claim 1, wherein operations of the first delivery mechanism and the second delivery mechanism are controlled so as to be conveyed to the unit block. A post-application inspection module that inspects the substrate before exposure after forming the resist film,
A storage unit that stores data of a route along which a substrate to be inspected is transferred before being inspected by the inspection module after coating,
Is provided,
The controller, when an abnormality is detected in the substrate in the inspection by the post-inspection inspection module, based on the data stored in the storage unit, transport the subsequent substrate,
For a unit block that includes a liquid processing module that forms at least a resist film, identify the module on which the substrate in which an abnormality has been detected has been processed, and transport the subsequent substrate to a module other than the identified module The coating and developing apparatus according to claim 1, wherein the operation of the transport mechanism is controlled. A post-application inspection module that inspects the substrate before exposure after forming the resist film,
A storage unit that stores data of a route along which a substrate to be inspected is transferred before being inspected by the inspection module after coating,
Is provided,
The controller, when an abnormality is detected in the substrate in the inspection by the post-inspection inspection module, based on the data stored in the storage unit, transport the subsequent substrate,
At least in a unit block including a liquid processing module for forming a resist film, a unit block in which a substrate in which an abnormality has been detected is processed is specified, and subsequent substrates are transferred to a unit block other than the specified unit block The coating and developing apparatus according to any one of claims 1 to 6, wherein the operation of the first delivery mechanism is controlled.

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