JP5634976B2 - Tftアレイ構造及びその製造方法 - Google Patents
Tftアレイ構造及びその製造方法 Download PDFInfo
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- JP5634976B2 JP5634976B2 JP2011272089A JP2011272089A JP5634976B2 JP 5634976 B2 JP5634976 B2 JP 5634976B2 JP 2011272089 A JP2011272089 A JP 2011272089A JP 2011272089 A JP2011272089 A JP 2011272089A JP 5634976 B2 JP5634976 B2 JP 5634976B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000002161 passivation Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 185
- 238000000206 photolithography Methods 0.000 description 30
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- -1 oxygen ion Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Description
ゲート電極12aとゲートライン12bは一体となり、ゲート電極12aはゲートライン12bから画素ユニットに突出している。
Claims (4)
- (a)基板にゲート金属層と、ゲート絶縁層と、半導体層と、オーミック接触層を順次積層し、ゲートラインとゲート電極のパターンを形成するように前記積層に対してパターニングを行い、パターニング後の積層パターンの断面形状を台形状とするステップと、
(b)前記基板に、厚さがゲート金属層と、ゲート絶縁層と、半導体層と、オーミック接触層との総計厚さよりも大きく、材料がペンタセーンである絶縁層をスピンコート法により形成し、前記オーミック接触層を露出させるように、酸素イオン反応エッチング処理であり、更にエッチング終点検出設備の使用を結合するエッチング処理により絶縁層の一部を除去するステップと、
(c)前記基板にソース・ドレイン金属層を形成し、データライン及び第1、第2のソース・ドレイン電極を形成するように前記ソース・ドレイン金属層に対してパターニングを行い、更に前記オーミック接触層を分断する分断溝を形成するように前記オーミック接触層に対してパターニングを行い、前記第1と第2のソース・ドレイン電極を前記分断溝を介して相互に対向させるステップと、
(d)前記基板にパッシベーション層を形成し、第2のソース・ドレイン電極上方に位置するビアーホールを形成するように前記パッシベーション層に対してパターニングを行うステップと、
(e)前記基板に画素電極層を形成し、前記ビアーホールを介して第2のソース・ドレイン電極に接続する画素電極を形成するように画素電極層に対してパターニングを行うステップと、
を含むことを特徴とするTFTアレイ基板の製造方法。 - 前記ステップ(b)において、オーミック接触層を露出させるように絶縁層の一部を除去した後、前記絶縁層の上面と前記オーミック接触層の上面とは共面となり、略平坦な表面を形成することを特徴とする請求項1に記載のTFTアレイ基板の製造方法。
- 前記ステップ(a)において、ゲート金属層、絶縁層、半導体層、オーミック接触層を順次形成する方法は連続堆積であることを特徴とする請求項1又は2に記載のTFTアレイ基板の製造方法。
- 前記ステップ(a)において、エッチングによりゲートラインとゲート電極を形成するのは、ゲート金属層と、絶縁層と、半導体層と、オーミック接触層に対して数回のエッチングにより実現することを特徴とする請求項1乃至3のうちのいずれか一項に記載のTFTアレイ基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200710063236.X | 2007-01-04 | ||
CNB200710063236XA CN100461433C (zh) | 2007-01-04 | 2007-01-04 | 一种tft阵列结构及其制造方法 |
Related Parent Applications (1)
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JP2007326033A Division JP2008166765A (ja) | 2007-01-04 | 2007-12-18 | Tftアレイ構造及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012054615A JP2012054615A (ja) | 2012-03-15 |
JP5634976B2 true JP5634976B2 (ja) | 2014-12-03 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007326033A Pending JP2008166765A (ja) | 2007-01-04 | 2007-12-18 | Tftアレイ構造及びその製造方法 |
JP2011272089A Active JP5634976B2 (ja) | 2007-01-04 | 2011-12-13 | Tftアレイ構造及びその製造方法 |
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JP2007326033A Pending JP2008166765A (ja) | 2007-01-04 | 2007-12-18 | Tftアレイ構造及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8324033B2 (ja) |
JP (2) | JP2008166765A (ja) |
KR (1) | KR100905943B1 (ja) |
CN (1) | CN100461433C (ja) |
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CN100423082C (zh) | 2006-11-03 | 2008-10-01 | 北京京东方光电科技有限公司 | 一种平板显示器系统内接口单元 |
CN100463193C (zh) * | 2006-11-03 | 2009-02-18 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
CN100461432C (zh) | 2006-11-03 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种薄膜晶体管沟道结构 |
KR100917654B1 (ko) | 2006-11-10 | 2009-09-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법 |
CN100442132C (zh) | 2006-11-17 | 2008-12-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
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CN100462795C (zh) | 2006-11-29 | 2009-02-18 | 北京京东方光电科技有限公司 | 取向液和隔垫物的制备方法 |
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