JP5633890B2 - フラッシュメモリ向け部分ブロック消去アーキテクチャ - Google Patents
フラッシュメモリ向け部分ブロック消去アーキテクチャ Download PDFInfo
- Publication number
- JP5633890B2 JP5633890B2 JP2013078709A JP2013078709A JP5633890B2 JP 5633890 B2 JP5633890 B2 JP 5633890B2 JP 2013078709 A JP2013078709 A JP 2013078709A JP 2013078709 A JP2013078709 A JP 2013078709A JP 5633890 B2 JP5633890 B2 JP 5633890B2
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- Prior art keywords
- block
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- data
- memory
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- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Description
102 ワード線ドライバブロック
104 ソース線電圧制御回路
106 上位サブブロック
108 下位サブブロック
300 サブブロック
302 サブブロック
304 サブブロックスライス
600 メモリブロック
602 メモリブロック
900 メモリブロック
902 メモリブロック
904 メモリブロック
906 メモリブロック
1100 メモリブロック
Claims (2)
- メモリバンクであって、
少なくとも2つのサブブロックを含む第1メモリブロックと、
少なくとも2つのサブブロックを含む第2メモリブロックと
を含み、前記第2メモリブロックの空きサブブロックが修正後データを含むことを目的としてプログラムされるように構成されているメモリバンクを備え、
前記第1メモリブロックのサブブロックは、
修正後データの未修正バージョンを含み、
前記修正後データが前記第2メモリブロックの前記空きサブブロックにプログラムされた後に消去される
ように構成され、
前記第2メモリブロックの前記空きサブブロックは、前記第1メモリブロックの前記サブブロックに対する前記第2メモリブロックの前記空きサブブロックのランキングに少なくとも基づいて選択される、フラッシュメモリ装置。 - メモリブロックのサブブロック内のデータを修正するときの磨耗レベリング制御のための方法であって、
新しいメモリブロックの空きサブブロックに対して修正後データをプログラムする段階であって、前記新しいメモリブロックの前記空きサブブロックは、前記メモリブロックの前記サブブロックに対する前記新しいメモリブロックの前記空きサブブロックのランキングに少なくとも基づいて選択される、段階と、
前記メモリブロックの前記サブブロックを消去する段階と
を含む方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89343207P | 2007-03-07 | 2007-03-07 | |
US60/893,432 | 2007-03-07 | ||
US91484907P | 2007-04-30 | 2007-04-30 | |
US60/914,849 | 2007-04-30 | ||
US11/779,685 US7804718B2 (en) | 2007-03-07 | 2007-07-18 | Partial block erase architecture for flash memory |
US11/779,685 | 2007-07-18 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009552034A Division JP2010520571A (ja) | 2007-03-07 | 2008-03-04 | フラッシュメモリ向け部分ブロック消去アーキテクチャ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014163661A Division JP2014241185A (ja) | 2007-03-07 | 2014-08-11 | フラッシュメモリ向け部分ブロック消去アーキテクチャ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013131289A JP2013131289A (ja) | 2013-07-04 |
JP5633890B2 true JP5633890B2 (ja) | 2014-12-03 |
Family
ID=39737732
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009552034A Pending JP2010520571A (ja) | 2007-03-07 | 2008-03-04 | フラッシュメモリ向け部分ブロック消去アーキテクチャ |
JP2013078709A Expired - Fee Related JP5633890B2 (ja) | 2007-03-07 | 2013-04-04 | フラッシュメモリ向け部分ブロック消去アーキテクチャ |
JP2014163661A Pending JP2014241185A (ja) | 2007-03-07 | 2014-08-11 | フラッシュメモリ向け部分ブロック消去アーキテクチャ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009552034A Pending JP2010520571A (ja) | 2007-03-07 | 2008-03-04 | フラッシュメモリ向け部分ブロック消去アーキテクチャ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014163661A Pending JP2014241185A (ja) | 2007-03-07 | 2014-08-11 | フラッシュメモリ向け部分ブロック消去アーキテクチャ |
Country Status (8)
Country | Link |
---|---|
US (3) | US7804718B2 (ja) |
EP (2) | EP2629300A2 (ja) |
JP (3) | JP2010520571A (ja) |
KR (1) | KR101460826B1 (ja) |
CN (1) | CN101681677A (ja) |
CA (1) | CA2678886A1 (ja) |
TW (1) | TWI457939B (ja) |
WO (1) | WO2008106778A1 (ja) |
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2014
- 2014-08-11 JP JP2014163661A patent/JP2014241185A/ja active Pending
- 2014-09-22 US US14/492,611 patent/US20150009754A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP2014241185A (ja) | 2014-12-25 |
US20100226183A1 (en) | 2010-09-09 |
US20150009754A1 (en) | 2015-01-08 |
CN101681677A (zh) | 2010-03-24 |
EP2629300A2 (en) | 2013-08-21 |
US7804718B2 (en) | 2010-09-28 |
WO2008106778A1 (en) | 2008-09-12 |
CA2678886A1 (en) | 2008-09-12 |
WO2008106778B1 (en) | 2008-11-06 |
EP2135253A1 (en) | 2009-12-23 |
KR20100015423A (ko) | 2010-02-12 |
EP2135253A4 (en) | 2010-04-14 |
JP2010520571A (ja) | 2010-06-10 |
US8842472B2 (en) | 2014-09-23 |
TWI457939B (zh) | 2014-10-21 |
JP2013131289A (ja) | 2013-07-04 |
TW200849261A (en) | 2008-12-16 |
KR101460826B1 (ko) | 2014-11-11 |
US20080219053A1 (en) | 2008-09-11 |
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