JP5601079B2 - Semiconductor device, semiconductor circuit board, and method of manufacturing semiconductor circuit board - Google Patents

Semiconductor device, semiconductor circuit board, and method of manufacturing semiconductor circuit board Download PDF

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JP5601079B2
JP5601079B2 JP2010178431A JP2010178431A JP5601079B2 JP 5601079 B2 JP5601079 B2 JP 5601079B2 JP 2010178431 A JP2010178431 A JP 2010178431A JP 2010178431 A JP2010178431 A JP 2010178431A JP 5601079 B2 JP5601079 B2 JP 5601079B2
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substrate
semiconductor
surface
circuit
material
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JP2012038951A (en
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尚希 小坂
宗山 天清
康 金谷
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三菱電機株式会社
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Description

  The present invention relates to a semiconductor device, a semiconductor circuit substrate, and a method for manufacturing a semiconductor circuit substrate.

  2. Description of the Related Art Conventionally, as disclosed in, for example, the following patent document, a technique for bonding a plurality of semiconductor substrates and semiconductor layers each having a semiconductor element formed thereon is known.

  For example, Japanese Patent Laid-Open No. 1-133341 describes a technique for bonding an epitaxial Si layer or GaAs layer on which an active element is formed to an Si substrate on which an active element is formed via an insulating film. ing. Japanese Patent Application Laid-Open No. 2005-136187 describes a technique for performing circuit bonding between a GaAs layer and a Si substrate via protruding electrodes such as solder balls. Japanese Patent Application Laid-Open No. 63-205918 describes a technique in which an epitaxial AlGaAs layer and an Si substrate on which an LSI is formed are bonded via a low melting point metal layer. Japanese Patent Application Laid-Open No. 8-236695 describes a technique in which an AlGaAs layer on which an element is formed is joined to a Si substrate on which a functional element is formed by van der Waals force via an insulating layer.

JP-A-1-133341 JP 2005-136187 A JP 63-205918 A JP-A-8-236695 JP-A 63-126260

  By producing a semiconductor element using a compound semiconductor material, a semiconductor element having excellent characteristics can be obtained by taking advantage of the superiority of the compound semiconductor. However, on the other hand, using a compound semiconductor material (specifically, for forming a compound semiconductor layer or preparing a semiconductor substrate of a compound semiconductor material) requires a correspondingly high cost. .

  In a semiconductor device, for example, a high-frequency semiconductor device such as an MMIC, various configurations such as a semiconductor active element, a passive circuit, a wiring, and a pad are formed on a semiconductor substrate according to a specific configuration of the circuit. The area occupied by passive circuits (passive elements, specifically MIM, inductor, etc.) is larger than the size of semiconductor active elements, that is, elements such as transistors and diodes. In the case of following the design guideline of forming circuit elements side by side on the same substrate, active elements and passive circuits are formed on the compound semiconductor substrate, so that most of the area on the expensive compound semiconductor substrate is the passive circuit. Will be occupied. As a result, it is not possible to satisfy the demand for manufacturing as many semiconductor devices as possible from one compound semiconductor substrate from the viewpoint of suppressing chip manufacturing costs.

  The present invention has been made to solve the above-described problems. A semiconductor device, a semiconductor circuit substrate, and a semiconductor circuit capable of obtaining a high-performance semiconductor element using a compound semiconductor while saving compound semiconductor materials. An object is to provide a method for manufacturing a substrate.

In order to achieve the above object, a first invention is a semiconductor device,
A front surface and a back surface; a compound semiconductor layer on the front surface; a semiconductor active element formed on the compound semiconductor layer; the back surface being a smooth surface made of a semiconductor ; and the semiconductor active element on the back surface A first substrate having a first contact region for electrical connection connected to
It is made of a material other than a compound semiconductor, does not have a semiconductor active element, has a smooth surface made of a semiconductor, a second contact region embedded so as to be exposed on the surface, and an inner surface so as not to form irregularities on the surface. A passive circuit embedded in or exposed on the back side and connected to the second contact region, and the first surface on the smooth surface so as to connect the first contact region and the second contact region. A second substrate directly joined to the smooth back surface of the substrate;
It is characterized by providing.

In order to achieve the above object, a second invention is a semiconductor circuit board,
A front surface and a back surface; a compound semiconductor layer on the front surface; a plurality of semiconductor active elements formed on the compound semiconductor layer; the back surface being a smooth surface made of a semiconductor ; and the back surface A first substrate having a plurality of first contact regions for electrical bonding connected to each of the semiconductor active elements;
It is made of a material other than a compound semiconductor, does not have a semiconductor active element, and has a smooth surface made of a semiconductor, a plurality of second contact regions embedded so as to be exposed on the surface, and not forming irregularities on the surface. And a plurality of passive circuits that are embedded inside or exposed on the back surface side and are connected to the plurality of second contact regions, respectively, and the plurality of first contact regions and the plurality of second contact regions are connected to each other. A second substrate in which the smooth back surface of the first substrate is directly bonded to the smooth front surface,
It is characterized by providing.

In order to achieve the above object, a third invention is a method of manufacturing a semiconductor circuit board,
Includes a compound semiconductor layer, a step of preparing the surface, a back surface of a semiconductor, a first substrate having,
Formed of a compound semiconductor other than the material, a step of preparing a surface made of a semiconductor, and the rear surface, a second substrate having,
Forming a semiconductor active element on the compound semiconductor layer on the first substrate, smoothing and activating the back surface by plasma treatment or ion gun, and electrical connection for connecting the semiconductor active element to the back surface Forming a first contact region;
Smoothing and activating the surface of the second substrate by plasma treatment or an ion gun, embedding the second contact region so as to expose the second contact region on the surface, and unevenness on the surface Forming a passive circuit so as to be embedded inside or exposed on the back surface side so as not to form and to be connected to the second contact region;
So as to connect the said first contact region and the second contact region, said smoothed the back surface of the first substrate to the smoothed the surface, are bonded directly by thermal compression or room temperature bonding Joining process;
It is characterized by having.

  According to the first invention, the semiconductor active element is formed on the first substrate and the characteristics of the compound semiconductor are utilized, and the passive circuit having a relatively large size is formed on the second substrate which is a material other than the compound semiconductor. be able to. By directly bonding the first and second substrates, characteristic deterioration that may occur at the substrate bonding portion can be suppressed. As a result, a semiconductor device having a semiconductor active element using a compound semiconductor can be obtained while saving the compound semiconductor material.

  According to the second invention, the semiconductor active element is formed on the first substrate and the characteristics of the compound semiconductor are utilized, and the passive circuit having a relatively large size is formed on the second substrate which is a material other than the compound semiconductor. be able to. By directly bonding the first and second substrates, characteristic deterioration that may occur at the substrate bonding portion can be suppressed. As a result, it is possible to obtain a semiconductor circuit substrate on which a plurality of high-performance semiconductor active elements using a compound semiconductor are formed while saving the compound semiconductor material.

  According to the third invention, a passive circuit having a relatively large size is formed on the second substrate, which is a material other than the compound semiconductor, while forming a semiconductor active element on the first substrate and utilizing the characteristics of the compound semiconductor. be able to. By directly bonding the first and second substrates, characteristic deterioration that may occur at the substrate bonding portion can be suppressed. As a result, it is possible to manufacture a semiconductor circuit board on which a high-performance semiconductor element using a compound semiconductor is mounted while saving the compound semiconductor material.

It is sectional drawing which expands and shows a part of structure of the semiconductor circuit board concerning Embodiment 1 of this invention. It is a top view which shows a part of structure of the semiconductor circuit board concerning Embodiment 1 of this invention. It is a figure for demonstrating the technique called "wafer layer transfer" used in Embodiment 1 of this invention. It is a figure which shows the structure of the semiconductor circuit board concerning Embodiment 2 of this invention. It is a figure which shows the structure of the semiconductor circuit board concerning Embodiment 3 of this invention. It is a figure which shows the manufacturing process (wafer bonding) of the semiconductor circuit board concerning Embodiment 3 of this invention. It is a figure for demonstrating the manufacturing method of the semiconductor circuit board concerning Embodiment 4 of this invention. It is a figure for demonstrating the manufacturing method of the semiconductor circuit board concerning Embodiment 4 of this invention. It is a figure for demonstrating the manufacturing method of the semiconductor circuit board concerning Embodiment 4 of this invention. It is a figure for demonstrating the manufacturing method of the semiconductor circuit board concerning Embodiment 4 of this invention. It is a figure which shows the structure of the semiconductor circuit board concerning Embodiment 5 of this invention. It is a figure which shows the structure of the semiconductor circuit board concerning Embodiment 6 of this invention. It is a figure which shows the structure of the semiconductor device concerning Embodiment 7 of this invention. It is a figure which expands and shows the area | region Y enclosed with the broken-line circle | round | yen in FIG. It is a figure which shows typically the structure of the semiconductor device concerning Embodiment 8 of this invention. FIG. 16 is an enlarged plan view showing the transistor chip of FIG. 15. It is a figure of the comparative example shown in order to demonstrate the effect which the semiconductor circuit board concerning Embodiment 1 of this invention show | plays. It is a figure of the comparative example shown in order to demonstrate the effect which the semiconductor circuit board concerning Embodiment 1 of this invention show | plays.

Embodiment 1 FIG.
[Configuration of Embodiment 1]
(Structure of semiconductor circuit board)
FIG. 1 is an enlarged sectional view showing a part of the configuration of the semiconductor circuit board 2 according to the first embodiment of the present invention. As an object (use) to which the configuration according to the present embodiment is applied, for example, an MMIC represented by a high-frequency circuit can be cited. The semiconductor circuit board 2 has the configuration of FIG. 1 as one unit, and a large number of the configurations of this one unit are arranged in the plane direction. That is, the semiconductor circuit substrate 2 has a configuration in which the transistor formation substrate 10 and the circuit formation substrate 50 are bonded at the wafer level.

  The semiconductor circuit board 2 according to the first embodiment is finally divided into individual chips and commercialized. Each configuration after the division corresponds to the “semiconductor device” according to the first exemplary embodiment. Such a relationship in which the individual configuration after dividing the semiconductor circuit board according to the present embodiment corresponds to the semiconductor device of the present embodiment is not limited to the first embodiment, but also in the configurations after the second embodiment. It is common.

  The semiconductor circuit substrate 2 according to this embodiment has a structure in which the transistor formation substrate 10 and the circuit formation substrate 50 are joined. The transistor formation substrate 10 and the circuit formation substrate 50 are substrates made of different materials. The transistor formation substrate 10 is a substrate having a compound semiconductor epitaxial layer (in this embodiment, GaN is taken as an example). The circuit formation substrate 50 is a substrate using a material (Si in this embodiment) that is less expensive than the transistor formation substrate 10 as a material.

  The transistor formation substrate 10 is provided with a BJT (Bipolar Junction Transistor) 40 which is a semiconductor active element. The transistor formation substrate 10 has a substrate thickness of 100 μm. The transistor formation substrate 10 functions as a collector layer of the BJT 40. The BJT 40 has a stacked structure of a collector 20, a base 22, an emitter 24, an emitter contact 30, a pseudo ohmic layer 32, a barrier layer 34, and emitter electrodes 36 and 38. Inter-element isolation regions 12 and 14 and wiring 16 are also provided. In the present embodiment, for convenience, the surface on the side where the BJT 40 is provided in the transistor formation substrate 10 is also referred to as “front surface”, and the surface (bonding surface) bonded to the circuit formation substrate 50 in the transistor formation substrate 10 is also referred to as “back surface”.

  The circuit forming substrate 50 includes a passive circuit (specifically, an MIM or an inductor) therein. Contact regions 52 and 54 are provided on the surface of the circuit forming substrate 50. The contact regions 52 and 54 are regions made of a conductive material (metal), and are provided to electrically connect a passive circuit inside the circuit formation substrate 50 to a circuit outside the circuit formation substrate 50. The passive circuit in the circuit formation substrate 50 and the BJT 40 of the transistor formation substrate 10 can be electrically connected via the contact regions 52 and 54.

The transistor formation substrate 10 has two contact regions. The first contact region (not shown) is provided below the collector layer 20 in the transistor formation substrate 10 (region on the BJT 40 side where the contact region 52 and BJT 40 are in contact). A contact region 17 as a second contact region is an electrode provided on the back surface of the transistor formation substrate 10 of FIG. The contact region 17 is in contact with the contact region 54 of the circuit formation substrate 50 and is electrically connected to a passive circuit on the circuit formation substrate 50 side.
In the present embodiment, a transistor having a structure called a semiconductor active element called an HBT (Heterojunction Bipolar Transistor) is illustrated, and an electrode brought into contact with the lower part of the collector layer is a collector electrode. Thus, the structure in which the electrode is in direct contact with the transistor can be applied only to the HBT.

  Note that the electrical connection between the configuration on the back surface side and the configuration on the front surface side of the transistor formation substrate 10 is performed by forming a via hole. The via hole has a configuration in which a wiring material such as Au is provided in a through hole provided in the transistor formation substrate 10. Specifically, a via hole connected to the contact region 54 of the circuit formation substrate 50 is provided at a predetermined position in the depth direction in FIG. The via hole extends through the top and bottom surfaces of the transistor forming substrate 10 in the vertical direction on the paper surface of FIG. By bonding the transistor formation substrate 10 and the circuit formation substrate 50, the conductor in the via hole can electrically connect the wiring 16 and the contact region 54, and the via hole is connected to the circuit and circuit of the transistor formation substrate 10. It plays a role of connecting the circuit of the formation substrate 50.

  A region X indicated by a dotted line in the figure indicates a compound semiconductor epitaxial layer portion saved in the present embodiment. By forming the transistor 40 and some other circuits on the transistor formation substrate 10 and forming the remaining circuits on the circuit formation substrate 50, the area of the region X indicated by the dotted line in the figure can be reduced. This means that the circuit formed in the portion X indicated by the dotted line in the transistor formation substrate 10 is formed on the circuit formation substrate 50. As a result, the circuit area required on the expensive transistor formation substrate 10 can be reduced, and the unit cost of the chip can be suppressed.

  FIG. 2 is a plan view showing a part of the configuration of the semiconductor circuit board 2 according to the first embodiment of the present invention. FIG. 2 is a diagram exemplifying a case where an MMIC is designed using the configuration according to the present embodiment, and shows a top view of this MMIC (Monolithic Microwave Integrated Circuit). Four BJTs 40, six pads 18 and wirings 16 connecting them are shown, which corresponds to the view of FIG. 1 viewed from directly above. The semiconductor circuit board 2 may have a wafer level configuration in which a plurality of MMICs shown in FIG.

(Bonding between substrates)
The transistor formation substrate 10 and the circuit formation substrate 50 are directly bonded. That is, in the present embodiment, no other film including an insulating film or a conductive film is interposed between the transistor formation substrate 10 and the circuit formation substrate 50.

  The transistor forming substrate 10 and the circuit forming substrate 50 can be bonded by “normal temperature bonding” or “thermocompression bonding”. In this embodiment, room temperature bonding is used.

  Room temperature bonding is a bonding method in which atoms existing on the surface of the bonding surface of each substrate are removed by plasma treatment or an ion gun, dangling bonds that become bonds are exposed, and each bonding surface is contacted and pressurized. .

  The joint surfaces of both the transistor formation substrate 10 and the circuit formation substrate 50 are both flat. The circuit must be embedded or exposed on the surface opposite to the bonding surface so that the bonding surface is not uneven. Both the smooth surface of the transistor forming substrate 10 and the smooth surface of the circuit forming substrate 50 preferably have a roughness of 3 nm or less.

  The bonding surface of each substrate is smooth, and the contact regions are electrically connected by bonding between the substrates. Since one circuit is formed by the semiconductor active element on the transistor formation substrate 10 side and the passive circuit on the circuit formation substrate 50 side, no material (insulator or the like) that affects the electrical characteristics is sandwiched between them. Is desirable. In particular, in a high-frequency circuit, when an insulating film or other impurities are included in the circuit (in this case, the substrate bonding portion), when a high-frequency power is input or output, a reflected wave is caused by that. It will occur. Such a situation is not preferable because it causes a loss.

  In this regard, the room temperature bonding technique can bond two substrates (the transistor formation substrate 10 and the circuit formation substrate 50) without interposing another film on the bonding surface. A room-temperature bonding technique capable of creating a state in which nothing is sandwiched between the bonding substrates is preferable in forming the semiconductor circuit substrate of this embodiment, and works advantageously on the characteristics of a device such as an amplifier using transistors.

  Among the several candidates for substrate bonding, the advantages obtained by using room temperature bonding technology are that there is no need to perform heat treatment that may affect transistor characteristics in the bonding process, There is no need to sandwich an insulator (film) between two substrates, which leads to deterioration of characteristics and suppression of yield reduction.

  The reason for using the room temperature bonding technique is that there is no need to perform heat treatment that may affect the transistor characteristics in the bonding process, and the first substrate (transistor formation substrate 10) and the second substrate having an electric bonding surface. There is no need to interpose an insulator (film) between the substrates (circuit forming substrate 50), leading to suppression of deterioration of characteristics and reduction of yield. In addition, in a joining method in which the distance between the joining substrates such as solder and bumps becomes large, if there is a gap between the substrates to be joined, there is a risk that good electrical contact cannot be obtained. For these reasons, the room temperature bonding technique is a suitable bonding technique for realizing the configuration according to the present embodiment.

(Wafer layer transfer)
Hereinafter, a technique called “wafer layer transfer” used in Embodiment 1 of the present invention will be described with reference to FIG. In the present embodiment, the transistor forming substrate 10 is formed by using this “wafer layer transfer” technique, and the semiconductor circuit substrate 2 is formed. FIG. 3 shows an epitaxial layer structure necessary for suppressing waste of the substrate due to back grinding. A separation sacrificial layer 62 is provided between the seed substrate (substrate 60) and the transistor formation substrate 10.

  The substrate that is originally wasted due to the back surface grinding corresponds to the layer B (substrate B) in the figure, and by reusing the substrate B (seed substrate 60), the waste of the substrate can be reduced. A sacrificial layer 62 is grown on the seed substrate 60, and a transistor active layer A (a transistor forming substrate 10, a collector layer 20, a base layer 22, an emitter layer 24, and an emitter contact layer 30 functioning as a subcollector layer) is formed thereon. Grow.

  After the transistor is formed, the sacrificial layer 62 is etched away by wet etching, and the transistor on the transistor formation substrate 10 and the seed substrate 60 are separated. The separated seed substrate 60 can be used again as an epitaxial growth substrate.

[Production Method of Embodiment 1]
A method for manufacturing the semiconductor circuit substrate according to the first embodiment will be described below.
First, a transistor formation substrate having a compound semiconductor layer is prepared. In the present embodiment, as described above, the transistor formation substrate 10 made of GaN is manufactured by the “wafer layer transfer” technique.

  In addition, a circuit formation substrate formed of a material other than the compound semiconductor is also prepared. In the present embodiment, a circuit forming substrate 50 made of Si is prepared as a substrate of a single semiconductor material other than a compound semiconductor.

  A semiconductor active element (BJT 40) is formed on the transistor formation substrate. In this embodiment, in order to perform the above-described “room temperature bonding”, the back surface of the transistor formation substrate 10 is activated and smoothed by plasma treatment or an ion gun. Further, a contact region for electrical connection connected to the BJT 40 is formed on the back surface of the transistor formation substrate 10.

  The surface of the circuit formation substrate 50 is also activated and smoothed by plasma treatment or ion gun in order to perform direct bonding with the transistor formation substrate 10. Further, contact regions 52 and 54 are embedded in the circuit formation substrate 50 so as to be exposed on the surface. Further, a passive circuit (not shown) and wiring are embedded inside so as not to form irregularities on the smoothed surface. Alternatively, the passive circuit is formed so that the unevenness appears on the back surface side, that is, the surface not joined to the transistor formation substrate 10. The passive circuit is connected to the contact regions 52 and 54.

  A smoothed back surface of the transistor formation substrate 10 and a circuit so as to connect the contact region (the contact region and contact region 17 not shown below the BJT 40) of the transistor formation substrate 10 with the contact regions 52 and 54 of the circuit formation substrate 50. The smoothed surface of the formation substrate 50 is directly bonded by room temperature bonding. At this time, the transistor formation substrate 10 and the circuit formation substrate 50 are bonded at the wafer level.

  In addition, you may join directly by thermocompression bonding instead of room temperature bonding.

[Effect of Embodiment 1]
Hereinafter, the effects obtained by this embodiment will be described with reference to the comparative examples of FIGS.

  Currently, in an MMIC represented by a high-frequency circuit or the like, an area occupied by a circuit (passive circuit) including passive elements such as an MIM and an inductor on a substrate is much larger than an area occupied by a transistor. That is, the area occupied by the passive circuit limits the number of transistors that can be formed on one substrate. As a result, it is difficult to control chip manufacturing costs in expensive material substrates such as compound semiconductors.

  FIG. 17 is a view of a comparative example shown for explaining the effect produced by the semiconductor circuit substrate according to the first embodiment of the present invention. FIG. 17 shows a top view of an MMIC designed in the prior art. A transistor 440, a wiring 416, and a pad 418 are formed on the substrate 410. The transistor 440 has a stacked structure of a collector 420, a base 422, an emitter 424, an emitter contact 430, a pseudo ohmic layer 432, a barrier layer 434, and emitter electrodes 436 and 438. When FIG. 2 is compared with FIG. 17, the dimension in the left-right direction on the paper surface is reduced by the area indicated by the broken line X in FIG. This reduction is achieved by forming and bonding the wiring occupying a considerable portion of the area in FIG. 17 on the circuit forming substrate 50 bonded to the back side of the paper in FIG.

  FIG. 18 is a diagram of a comparative example shown for explaining the effect produced by the semiconductor circuit substrate according to the first embodiment of the present invention. FIG. 18 shows a transistor structure using the prior art. In the conventional structure, the wiring 416 occupies a considerably large area on the compound semiconductor substrate 410 together with the semiconductor active element (BJT 440 in FIG. 18). This is because the wiring 416 and the passive circuit (not shown) are all provided on the compound semiconductor substrate 410.

  In this regard, according to the present embodiment, a semiconductor active element is provided on the transistor forming substrate 10 having the compound semiconductor epitaxial layer, and a passive circuit is provided on the circuit forming substrate 50 made of a material other than the compound semiconductor. 10 and the smooth surface of the circuit forming substrate 50 can be bonded. Thereby, when creating one circuit including the semiconductor active element and the passive circuit, the excellent physical properties of the compound semiconductor can be utilized for the semiconductor active element. At the same time, the circuit forming substrate 50 not using an expensive compound semiconductor material can be used to form a passive circuit occupying a relatively large circuit area without providing a semiconductor active element.

  As described above, according to the present embodiment, the transistor formation substrate 10 including the compound semiconductor is assigned to the active element formation, and the circuit formation substrate 50 formed of a material other than the compound semiconductor is assigned to the passive circuit formation. Can be used. As a result, it is possible to reduce the area of the compound semiconductor layer in the planar direction compared to a configuration in which active elements and passive circuits are formed side by side on a single semiconductor substrate. Can be saved.

  Moreover, according to the present embodiment, the transistor formation substrate 10 and the circuit formation substrate 50 are directly bonded without interposing another film between the transistor formation substrate 10 and the circuit formation substrate 50. Thereby, it is possible to suppress deterioration in characteristics of a circuit including the BJT 40 and a passive circuit (not shown) on the circuit forming substrate 50 side. In other words, according to the configuration of the present embodiment, characteristic deterioration caused by the configuration of the present embodiment in which the semiconductor active element and the passive circuit are not formed on a single semiconductor substrate (for example, the configuration of the substrate bonding portion in the high-frequency circuit) Adverse effects that cause reflected waves). Therefore, the compound semiconductor material can be saved while suppressing the performance degradation of the semiconductor device.

  In addition, since the active element is provided in the compound semiconductor, it is possible to suppress degradation of the performance of the entire device, while the passive circuit can be provided on a substrate other than the compound semiconductor material (circuit forming substrate 50). Since compound semiconductors are generally expensive, the overall cost can be reduced by reducing the amount of compound semiconductors used.

  Currently, for the purpose of obtaining good heat dissipation with respect to the transistor and reducing the chip size, a technique is known in which the transistor is formed on a substrate and then the wafer is thinned by grinding the back surface. As a result of this backside polishing, there is a wasted substrate portion.

  Specifically, in FIG. 18, after forming the transistor (BJT 440), the substrate 410 is thinned by backside grinding (for example, approximately 625 μm → 100 μm by MMIC). For this reason, there is a waste portion 400 that is wasted by polishing. When an expensive substrate such as a compound semiconductor is used, reducing the wasted substrate portion leads to a reduction in chip cost. Therefore, it is desired to avoid such a waste portion 400 as much as possible.

  In this regard, according to the first embodiment, since the transistor forming substrate 10 is formed using the “wafer layer transfer” technique, it is possible to suppress the generation of the waste portion 400.

  In the above-described first embodiment, the configuration after dividing the semiconductor circuit substrate 2 into chips (in the first embodiment, for example, the configuration of one unit shown in FIG. 1 after the division) is the first. In the “semiconductor device” of the present invention, the transistor formation substrate 10 is the “first substrate” in the first invention, the BJT 40 is the “semiconductor active element” in the first invention, and the back surface of the transistor formation substrate 10. The exposed positions of via holes (not shown) in the plane correspond to the “first contact regions” in the first invention. In the first embodiment described above, the circuit forming substrate 50 is a “second substrate” in the first invention, and the passive circuit (not shown) including the wiring formed on the circuit forming substrate 50 is The contact regions 52 and 54 correspond to the “passive circuit” in the first invention and the “second contact region” in the first invention, respectively.

  In the first embodiment described above, the semiconductor circuit substrate 2 is the “semiconductor circuit substrate” in the second invention, the transistor formation substrate 10 is the “first substrate” in the second invention, and the BJT 40 is In the “semiconductor active element” in the second aspect of the present invention, the contact region (the contact region (not shown) below the BJT 40 and the via hole (not shown) exposed position) in the back surface of the transistor forming substrate 10 is the second region. This corresponds to the “first contact region” in the present invention. In the first embodiment described above, the circuit forming substrate 50 is a “second substrate” according to the second aspect of the present invention, and the passive circuit (not shown) including the wiring formed on the circuit forming substrate 50 is The contact regions 52 and 54 correspond to the “passive circuit” in the second invention, and correspond to the “second contact region” in the second invention, respectively.

  The semiconductor device (MMIC) including the four semiconductor active elements (BJT 40) shown in FIG. 2 is also included in the “semiconductor device” according to the first invention. In this case, each of the four BJTs 40 corresponds to the “semiconductor active element” in the first invention.

[Modification of Embodiment 1]
As shown in FIG. 1, in the first embodiment, a vertical structure device BJT 40 is provided on a transistor formation substrate 10. However, the present invention is not limited to this. Instead of BJT, another semiconductor active element (for example, FET, HBT, or diode) may be provided in the compound semiconductor epitaxial layer corresponding to the transistor formation substrate 10.

  In the first embodiment, the MMIC is illustrated using FIG. 2, but the configuration of the present invention is not limited to this. The present invention is not limited to the MMIC and is not limited to the high-frequency circuit, and can be applied to various semiconductor devices and circuits.

  Note that the position of the active element may be within a margin frame by setting the size of the “margin” for joining the transistor formation substrate 10 to 100 μm from the outer edge, for example. The position of the passive element may also be within the margin of the circuit forming substrate 50.

In addition, various compound semiconductor materials such as GaN, SiC, GaAs, and InP can be used as the transistor material (that is, the compound semiconductor material) in this embodiment. Various so-called wide gap semiconductor materials having a larger band gap than Si (silicon) can also be used.
As an advantage of InP over GaAs, InP can obtain excellent high frequency characteristics from the viewpoint of material properties that electron velocity is high. That is, according to InP, gain can be obtained in a higher frequency region than GaAs. In addition, since GaN has a high breakdown voltage, it has an advantage that high voltage driving and high output driving are possible.
In addition, SiC, which is one of wide gap semiconductor materials, has characteristics such that a high current can flow, it can operate at a high frequency, it can operate at a high temperature, it has high insulation, and a threshold voltage is low. Switching elements and diode elements formed by such wide band gap semiconductors have high voltage resistance and high allowable current density, so that switching elements and diode elements can be miniaturized. By using elements and diode elements, it is possible to reduce the size of a semiconductor module incorporating these elements. Furthermore, since the power loss is low, it is possible to increase the efficiency of the switching element and the diode element, and further increase the efficiency of the semiconductor module.
Further, the circuit forming substrate 50 is not limited to Si but may be other materials. In addition, as a combination of the material of the transistor formation substrate 10 and the material of the circuit formation substrate 50, the substrate material of the transistor formation substrate 10 is a compound semiconductor material such as GaAs, GaN, and InP that greatly affects the characteristics of the transistor (active element). On the other hand, Si is desirable as a substrate material of the circuit forming substrate 50 from the viewpoint of cost reduction.

  Further, the bonding between the transistor forming substrate 10 and the circuit forming substrate 50 is not limited to room temperature bonding. For example, direct bonding without interposing another film such as an insulating film may be realized by thermocompression bonding.

Embodiment 2. FIG.
Hereinafter, in order to avoid duplication, the same reference numerals are given to the same or corresponding components as those described in the first embodiment, and the description will be omitted or simplified as appropriate.

  FIG. 4 is a diagram showing the configuration of the semiconductor circuit board according to the second embodiment of the present invention. Similarly to the first embodiment, the semiconductor circuit substrate according to the second embodiment also includes the transistor formation substrate 10 and the circuit formation substrates 50 and 70 so that a large number of the structures shown in FIG. 4 are formed in the planar direction. Bonded at wafer level. Then, the wafer level configuration is divided into units of chips and the unit configuration shown in FIG. 4 corresponds to the “semiconductor device” according to the second embodiment.

  In the second embodiment, a circuit formation substrate 70 similar to the circuit formation substrate 50 bonded to the back surface in FIG. 1 is also bonded to the upper surface side of the transistor formation substrate 10. The circuit forming substrate 70 has a contact region 72 made of a conductive material. An electrical connection between the circuit inside the circuit formation substrate 70 and the BJT 40 on the transistor formation substrate 10 is secured via the contact region 72.

  Similarly to the circuit formation substrate 50, the circuit formation substrate 70 is formed of a material other than the compound semiconductor material, specifically, silicon (Si) in the second embodiment. Similar to the circuit formation substrate 50, no semiconductor active element is formed on the circuit formation substrate 70, and only a passive circuit including wiring is formed.

  According to the above configuration, the circuit configuration can be expanded by adding the passive circuit of the circuit formation substrate 70 to the semiconductor circuit substrate according to the first embodiment.

Embodiment 3 FIG.
Hereinafter, in order to avoid duplication, the same reference numerals are given to the same or corresponding components as those described in the first embodiment, and the description will be omitted or simplified as appropriate.

  FIG. 5 is a diagram showing the configuration of the semiconductor circuit board according to the third embodiment of the present invention. Similarly to the first and second embodiments, the semiconductor circuit substrate of the third embodiment also has a transistor formation substrate 10, a circuit formation substrate 50, and a circuit formation substrate 50 so that a large number of the configurations shown in FIG. 70 is bonded at the wafer level. Then, the wafer level configuration is divided into chip units to form a single unit configuration shown in FIG. 5, which corresponds to the “semiconductor device” according to the third embodiment.

  In the present embodiment, a side wall 74 is provided on the side of the BJT 40 so as to surround the BJT 40 with respect to the configuration shown in FIG. The internal space surrounded by the transistor formation substrate 10, the circuit formation substrate 70, and the side wall 74 is resin-sealed or hollow. Thereby, BJT40 which is a semiconductor active element can be packaged. A via hole 76 is formed in the side wall 74 by providing a conductive material (for example, Au plating) inside the through hole. Electrical connection can be made by the via hole 76. Note that the via hole referred to here also includes a plug (a through hole embedded with a conductive material).

  In the third embodiment, as shown in FIG. 6, the formation of the back surface / front surface of the transistor and the side wall 74 is simplified by formation at the wafer level. As a result, a plurality of BJTs 40 provided on the transistor formation substrate 10 can be packaged together. The wafer size may be any number of inches, and it may be possible to take measures against warping of the thinned substrate by dividing into several. When bonding at the wafer size, two orientation flats are used. Needless to say, the holes designed with high accuracy by the mask instead of the orientation flat may be opened in the substrates to be joined (that is, the transistor formation substrate 10 and the circuit formation substrate 50), and alignment may be performed.

  In the third embodiment, the side wall 74 has the via hole 76, but the present invention is not limited to this. It is not necessary to have the via hole 76.

Embodiment 4 FIG.
7 to 10 are views for explaining a method of manufacturing a semiconductor circuit substrate according to the fourth embodiment of the present invention. The method for manufacturing a semiconductor circuit board according to the fourth embodiment is an example of a specific method for manufacturing the side wall 74 according to the third embodiment.

  In the fourth embodiment, the configuration of a transistor which is a semiconductor active element is different from the configuration of the first to third embodiments (FIGS. 1 to 4) from the viewpoint of showing variations in the configuration. As shown in FIG. 7, the transistor 140 according to the fourth embodiment includes a collector electrode 120. However, in the fourth embodiment, the transistor 140 may be replaced with the BJT 40 as in the first to third embodiments.

  FIG. 7 is a diagram showing a configuration when the surface of the transistor formation substrate 10 is covered with a protective material 80 such as a resist in the configuration of FIG. 1 and a groove 82 into which a sidewall material is poured is formed. The protective material 80 is provided to such a height as to sufficiently cover the uppermost structure (emitter electrode 38) of the transistor 140. The groove 82 may be formed by exposure, development and etching if the protective material 80 is a resist, or formed by processing the protective material 80 with a sharp tool such as a needle or a processing apparatus such as a laser. Also good.

  FIG. 8 is a diagram showing a configuration at the time when the protective material 84 is further laminated and the groove 86 is formed in the configuration of FIG. With respect to the structure of FIG. 7, a packaging material 74 (which may be a resin or a conductive material) is poured into the groove 82 for side wall formation. Then, a protective material 84 (for example, a resist) is laminated again. Thereafter, a groove 86 having a width narrower than that of the groove 82 is formed immediately above the groove 82 in the protective material 84. The formation of the groove 86 may be performed by etching or using various processing apparatuses as in the formation of the groove 82 described above.

  FIG. 9 is a diagram showing a configuration at the time when a via hole 76 is further provided in the configuration of FIG. With respect to the configuration of FIG. 8, through holes as via holes are formed in the packaging material 74 by, for example, dry etching.

  FIG. 10 is a diagram showing a configuration at the time when the transistor surface (specifically, a part of the emitter electrode 38) is shaved and the emitter electrode 38 is exposed in the configuration of FIG. When cutting the transistor surface, a known technique such as CMP (Chemical Mechanical Polishing) or dry etching may be used. Note that the protective material 80 such as a resist covering the periphery of the transistor 140 may be removed or may be left without being removed. When the transistor 140 is removed, the periphery of the transistor 140 becomes a cavity, and when the transistor 140 is not removed, the periphery of the transistor 140 is filled with the protective material 80.

  As in the first embodiment, the semiconductor circuit substrate according to the fourth embodiment also includes the transistor formation substrate 10 and the circuit formation substrates 50 and 70 so that a large number of the configurations shown in FIG. 4 are formed in the planar direction. Bonded at wafer level. 7 to 10 show only the configuration of one transistor 140, but in the method of manufacturing a semiconductor circuit substrate according to the fourth embodiment, a large number of transistors 140 are arranged in the wafer plane direction. The processing steps are performed at the wafer level so that the steps of FIGS. 7 to 10 are applied to each of the large number of transistors 140. Finally, the wafer level configuration is divided into chip units to form one unit configuration.

Embodiment 5 FIG.
FIG. 11 is a diagram showing the configuration of the semiconductor circuit board according to the fifth embodiment of the present invention. The configuration of FIG. 11 is obtained by stacking the configuration of the semiconductor circuit substrate according to the third embodiment shown in FIG. 5 in the direction perpendicular to the substrate plane.

  In FIG. 11, a circuit forming substrate 90 is interposed between two transistor forming substrates 10 (that is, between two transistors 140 arranged in the vertical direction on the paper). The circuit forming substrate 90 includes contact regions 92, 94, and 96. The circuit forming substrate 90 basically has the same configuration as the circuit forming substrates 50 and 70, but the configuration of the internal circuit thereof is different. The circuit formation substrate 90 contains wiring for electrically connecting the two transistors 140 and / or passive circuits. The contact region 94 can be electrically connected to the transistor 140 below the paper surface, and the contact regions 92 and 96 can be electrically connected to the transistor 140 above the paper surface.

  In FIG. 11, only two transistors 140 and their peripheral configuration are shown. However, also in the semiconductor circuit substrate of the fifth embodiment, as in the first to fourth embodiments, the transistor formation substrate 10 and the circuit formation substrate 50 are arranged so that a large number of the configurations shown in the figure are formed in the plane direction. , 70, 90 are bonded at the wafer level. That is, in the present embodiment, the laminated structure of the circuit forming substrate 50, the transistor forming substrate 10, the circuit forming substrate 90, the transistor forming substrate 10 and the circuit forming substrate 70 is realized by bonding at the wafer level, and FIG. A semiconductor circuit substrate in which a large number of the configurations shown are arranged on a plane is provided. Bonding between these substrates is performed using a wafer bonding technique. Then, the wafer level configuration divided into chip units to form a single unit configuration shown in FIG. 11 corresponds to the “semiconductor device” according to the fifth embodiment.

  By arranging the transistors 140 in the vertical direction (substrate stacking direction) as in this embodiment, the chip area (chip plane direction area) can be reduced. Note that any number of transistors 140 may be joined vertically, and the transistor 140 may be formed in three, four, or more stages by repeatedly joining the transistor formation substrate 10 and the circuit formation substrates 50, 90, and 70 as appropriate. It may be stacked. Note that the structure of the transistor 140 may be appropriately replaced with an HBT as in the first to third embodiments, or may be replaced with another semiconductor active element (such as a diode).

Embodiment 6 FIG.
FIG. 12 is a diagram showing the configuration of the semiconductor circuit board according to the sixth embodiment of the present invention. FIG. 12 shows a structure in which a plurality of circuit formation substrates (circuit formation substrates 150, 152, 170, and 172) are bonded to the back surface and front surface of the transistor chip in FIG. The circuit formation substrates 150, 152, 170, and 172 are each formed of a material other than a compound semiconductor, are joined to each other, and are electrically connected to each other at a contact region that each has. Each of the circuit formation substrates 150, 152, 170, and 172 has wirings and / or passive circuits. The internal configuration of each of the circuit forming substrates 150, 152, 170, and 172 may be the same or different from each other.

  As the circuit on the transistor formation substrate is formed on a plurality of circuit formation substrates, the circuit area on the transistor formation substrate can be reduced, and as a result, the chip area can be reduced. As a result, the number of transistors that can be formed on the transistor formation substrate 10 can be increased, and the compound semiconductor material can be saved.

Embodiment 7 FIG.
FIG. 13 is a diagram showing the configuration of the semiconductor device according to the seventh embodiment of the present invention. In the semiconductor device according to the seventh embodiment, in the configuration in which the unit configuration of the semiconductor device according to the fifth embodiment shown in FIG. The circuit forming substrates 280 and 282 are joined so as to be sandwiched.

  The semiconductor device according to the seventh embodiment assumes a structure in which a chip elongated in the vertical direction of the substrate is laid sideways, both sides are covered with a circuit board, and all directions are surrounded by the circuit board. That is, it is assumed that the semiconductor device in the seventh embodiment is used by rotating the paper surface of FIG. 13 by 90 degrees and positioning the circuit formation substrates 280 and 282 vertically.

  One circuit formation substrate 250 is bonded to each of the five transistor formation substrates 10. Each circuit formation substrate 250 has contact regions on the front surface and the back surface thereof in the same manner as the circuit formation substrate 50 (note that the lowermost circuit formation substrate 250 may not have a contact region on the back surface). Further, the circuit formation substrate 250 also has a contact region on its side surface, and can be electrically connected to the circuit formation substrates 280 and 282 by the contact region on the side surface (region Y surrounded by a broken line circle in FIG. 12). See).

  FIG. 14 is an enlarged view of a region Y surrounded by a broken-line circle in FIG. FIG. 14A is a view of a partial surface of the circuit formation substrate 250 to be joined to the back surface of the transistor formation substrate 10 as viewed from above the paper surface of FIG. FIG. 14B is an enlarged view of the region Y. In FIG. 14, in order to electrically join the upper and lower circuit formation substrates 280 and 282, a contact region 254 is also formed at the end of the circuit formation substrate 250 as an embedded circuit (embedded contact region) of the circuit formation substrate 250. Reference numerals 252 and 256 denote contact regions with the transistor formation substrate 10.

  Even if the chip cost is reduced by stacking transistors in the direction perpendicular to the substrate, if the number of stacked layers is increased too much, the balance of the entire configuration may be lost. Therefore, the laminated structure having a large dimension in the vertical direction (vertical direction of the substrate surface) is laid down sideways, and stable by bonding inexpensive circuit forming substrates 280 and 282 made of a material other than a compound semiconductor to the upper and lower sides thereof. A configuration can be obtained. Note that “laying sideways” may be rotated 90 degrees, or may be tilted to the extent that the laminated structure can be supported from the lateral direction, even if it is not completely 90 degrees.

Embodiment 8 FIG.
FIG. 15 is a diagram schematically showing the configuration of the semiconductor device according to the eighth embodiment of the present invention. FIG. 15A is a cross-sectional view of the transistor forming substrate 10 as seen from a cut surface, and FIG. 15B is a plan view of the semiconductor device according to the eighth embodiment as viewed from above the transistor forming substrate 10.

  The semiconductor device according to the eighth embodiment has a different premise configuration from the first to sixth embodiments. That is, the configuration according to the first to sixth embodiments (for example, FIG. 1) assumes the bonding of the transistor formation substrate 10 and the circuit formation substrate 50 in wafer size. On the other hand, in the semiconductor device according to the eighth embodiment, one transistor chip 240 (one obtained by separating the transistor formation substrate 10 according to each of the above-described embodiments in units of chips) is bonded onto the circuit formation substrate 350. It has a configuration. The circuit formation substrate 350 is provided with wirings 354 and 352. The wirings 352 and 354 are connected to the region where the transistor chip 240 is attached. The circuit formation substrate 350 is formed of a material other than the compound semiconductor, like the circuit formation substrate 50, and a passive circuit or the like is formed.

  FIG. 16 is an enlarged plan view showing the transistor chip 240 of FIG. In the transistor chip 240, a BJT 40, a wiring 316, and a pad 318 are formed. A via hole that penetrates through the main body of the transistor chip 240 to the back surface is formed on the back side of the pad 318.

  According to the present embodiment, the area of the transistor formation substrate 10 can be made smaller than the area of the circuit formation substrate 350, thereby increasing the number of transistors that can be taken on the expensive transistor formation substrate 10 made of a compound semiconductor. As a result, the chip unit price can be reduced.

  In the above-described eighth embodiment, the structure in which the transistor chip 240 is bonded to the circuit formation substrate 350 (the structure shown in FIG. 15) is the compound semiconductor of the transistor chip 240 in the “semiconductor device” in the first invention. The substrate region is the “first substrate” in the first invention, the transistor element on the transistor chip 240 is the “semiconductor active element” in the first invention, and the contact region in the back surface of the transistor chip 240 is the contact region. (A contact region (not shown) below the transistor element and a via hole (not shown) exposed position) correspond to the “first contact region” in the first invention, respectively. Further, in the above-described eighth embodiment, the circuit forming substrate 350 includes a passive circuit (not shown) including wirings 354 and 352 formed on the circuit forming substrate 350 in the “second substrate” in the first invention. However, in the “passive circuit” in the first invention, the contact region provided on the back surface of the transistor chip 240 on the surface of the circuit forming substrate 350 in FIG. 15B is the “second contact region” in the first invention. Respectively.

2 Semiconductor circuit substrate 10 Transistor forming substrates 12 and 14 Interelement isolation region 16 Wiring 17 Contact region 18 Pad 20 Collector (collector layer)
22 Base (base layer)
24 Emitter (emitter layer)
30 Emitter contact (emitter contact layer)
32 pseudo-ohmic layer 34 barrier layer 36, 38 emitter electrode 40 transistor 50, 70, 90, 150, 152, 170, 172 circuit forming substrate 52, 54 contact region 60 seed substrate 62 sacrificial layer 72 contact region 74 sidewall (packaging material) )
80, 84 Protective material 82, 86 Groove 92, 94 Contact region 120 Collector electrode 140 Transistor 240 Transistor chip 252, 254 Contact region 250, 280, 282, 350 Circuit forming substrate 318 Pad 316, 352, 354 Wiring 400 Waste part

Claims (16)

  1. A front surface and a back surface; a compound semiconductor layer on the front surface; a semiconductor active element formed on the compound semiconductor layer; the back surface being a smooth surface made of a semiconductor ; and the semiconductor active element on the back surface A first substrate having a first contact region for electrical connection connected to
    It is made of a material other than a compound semiconductor, does not have a semiconductor active element, has a smooth surface made of a semiconductor, a second contact region embedded so as to be exposed on the surface, and an inner surface so as not to form irregularities on the surface. A passive circuit embedded in or exposed on the back side and connected to the second contact region, and the first surface on the smooth surface so as to connect the first contact region and the second contact region. A second substrate directly joined to the smooth back surface of the substrate;
    A semiconductor device comprising:
  2.   A third substrate formed of a material other than a compound semiconductor, having no semiconductor active element, and further connected to the semiconductor active element of the first substrate on the surface side of the first substrate. Item 14. A semiconductor device according to Item 1.
  3.   The semiconductor device further comprises a sidewall provided on the first substrate so as to surround the semiconductor active device and forming an internal space for housing the semiconductor active device together with the first substrate and the third substrate. Item 3. The semiconductor device according to Item 2.
  4.   The semiconductor device according to claim 3, wherein the side wall includes a connection portion made of a conductive material interposed between the first substrate and the third substrate.
  5. Two or more semiconductor devices according to any one of claims 2 to 4 are provided,
    Of the two or more of the semiconductor devices according to any one of claims 2 to 4, a surface of the third substrate of the first semiconductor device that is not connected to a circuit of the first substrate; 5. The semiconductor device according to claim 2, wherein the surface of the second substrate of the second semiconductor device is bonded to the surface of the semiconductor device according to any one of claims 2 to 4.
  6. A front surface and a back surface; a compound semiconductor layer on the front surface; a plurality of semiconductor active elements formed on the compound semiconductor layer; the back surface being a smooth surface made of a semiconductor ; and the back surface A first substrate having a plurality of first contact regions for electrical bonding connected to each of the semiconductor active elements;
    It is made of a material other than a compound semiconductor, does not have a semiconductor active element, and has a smooth surface made of a semiconductor, a plurality of second contact regions embedded so as to be exposed on the surface, and not forming irregularities on the surface. And a plurality of passive circuits that are embedded inside or exposed on the back surface side and are connected to the plurality of second contact regions, respectively, and the plurality of first contact regions and the plurality of second contact regions are connected to each other. A second substrate in which the smooth back surface of the first substrate is directly bonded to the smooth front surface,
    A semiconductor circuit board comprising:
  7.   A third substrate formed of a material other than a compound semiconductor, having no semiconductor active element, and further connected to the semiconductor active element of the first substrate on the surface side of the first substrate. Item 7. A semiconductor circuit board according to Item 6.
  8.   The semiconductor device further comprises a sidewall provided on the first substrate so as to surround the semiconductor active device and forming an internal space for housing the semiconductor active device together with the first substrate and the third substrate. Item 8. A semiconductor circuit board according to Item 7.
  9.   The semiconductor circuit board according to claim 8, wherein the side wall has a connection portion made of a conductive material interposed between the first substrate and the third substrate.
  10. It comprises two or more semiconductor circuit boards according to any one of claims 7 to 9,
    Of the two or more of the semiconductor circuit substrates according to any one of claims 7 to 9, a surface of the third substrate of the first semiconductor circuit substrate that is not connected to the circuit of the first substrate; The semiconductor characterized in that the surface of the second substrate of the second semiconductor circuit substrate is bonded to the two or more of the semiconductor circuit substrates according to any one of claims 7 to 9. Circuit board.
  11. Wherein said rear surface and said surface of the second substrate of the first substrate, the semiconductor circuit substrate according to any one of claims 6 to 10, wherein the roughness is 3nm or less.
  12. The first substrate, the semiconductor circuit board according to any one of claims 6-11, characterized in that it has a thickness of less than 100 [mu] m.
  13. Includes a compound semiconductor layer, a step of preparing the surface, a back surface of a semiconductor, a first substrate having,
    Formed of a compound semiconductor other than the material, a step of preparing a surface made of a semiconductor, and the rear surface, a second substrate having,
    Forming a semiconductor active element on the compound semiconductor layer on the first substrate, smoothing and activating the back surface by plasma treatment or ion gun, and electrical connection for connecting the semiconductor active element to the back surface Forming a first contact region;
    Smoothing and activating the surface of the second substrate by plasma treatment or an ion gun, embedding the second contact region so as to expose the second contact region on the surface, and unevenness on the surface Forming a passive circuit so as to be embedded inside or exposed on the back surface side so as not to form and to be connected to the second contact region;
    So as to connect the said first contact region and the second contact region, said smoothed the back surface of the first substrate to the smoothed the surface, are bonded directly by thermal compression or room temperature bonding Joining process;
    A method for manufacturing a semiconductor circuit board, comprising:
  14. Coating a surface of the first substrate on which the semiconductor active element is provided with a first material;
    Forming a groove in the material so as to surround the semiconductor active element;
    Placing a second material in the groove to form a sidewall for packaging the semiconductor active device;
    The surface of the first substrate on which the semiconductor active element is provided is smooth and the electrodes of the first material and the second material placed in the groove are exposed so that the electrodes of the semiconductor active element are exposed. Adjusting the height;
    Preparing a third substrate formed of a material other than a compound semiconductor and having no semiconductor active element;
    The first side of the first substrate is connected to the circuit of the first substrate with respect to the side wall formed of the second material after the first material is removed or to the first substrate. Attaching the third substrate to the side wall formed of the second material while leaving the material;
    The method of manufacturing a semiconductor circuit board according to claim 13, comprising:
  15. Forming a via hole in the material placed in the groove;
    Creating vias by filling the via holes with a conductive material;
    15. The method of manufacturing a semiconductor circuit substrate according to claim 14, wherein a third substrate is attached so as to be electrically connected to the circuit of the first substrate through the via.
  16. A manufacturing process for manufacturing a semiconductor circuit board using the method for manufacturing a semiconductor circuit board according to any one of claims 13 to 15,
    Dividing the semiconductor circuit board manufactured by the manufacturing process into a plurality of chips in units of semiconductor devices;
    A method for manufacturing a semiconductor device, comprising:
JP2010178431A 2010-08-09 2010-08-09 Semiconductor device, semiconductor circuit board, and method of manufacturing semiconductor circuit board Expired - Fee Related JP5601079B2 (en)

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US13/091,204 US8471377B2 (en) 2010-08-09 2011-04-21 Semiconductor device and semiconductor circuit substrate
DE102011080360A DE102011080360A1 (en) 2010-08-09 2011-08-03 A semiconductor device, a semiconductor circuit substrate, and a method of manufacturing a semiconductor circuit substrate
CN201110225510.5A CN102376664B (en) 2010-08-09 2011-08-08 Semiconductor device, semiconductor circuit substrate, and method of manufacturing semiconductor circuit substrate

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DE102011080360A1 (en) 2012-02-09
JP2012038951A (en) 2012-02-23

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