JP5469068B2 - バイポーラ型炭化珪素半導体装置およびその製造方法 - Google Patents
バイポーラ型炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- JP5469068B2 JP5469068B2 JP2010526712A JP2010526712A JP5469068B2 JP 5469068 B2 JP5469068 B2 JP 5469068B2 JP 2010526712 A JP2010526712 A JP 2010526712A JP 2010526712 A JP2010526712 A JP 2010526712A JP 5469068 B2 JP5469068 B2 JP 5469068B2
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 79
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 26
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- 238000010438 heat treatment Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- 229910052757 nitrogen Inorganic materials 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010526712A JP5469068B2 (ja) | 2008-08-26 | 2009-08-25 | バイポーラ型炭化珪素半導体装置およびその製造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008217386 | 2008-08-26 | ||
| JP2008217386 | 2008-08-26 | ||
| PCT/JP2009/064770 WO2010024240A1 (fr) | 2008-08-26 | 2009-08-25 | Dispositif semi-conducteur en carbure de silicium bipolaire |
| JP2010526712A JP5469068B2 (ja) | 2008-08-26 | 2009-08-25 | バイポーラ型炭化珪素半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2010024240A1 JPWO2010024240A1 (ja) | 2012-01-26 |
| JP5469068B2 true JP5469068B2 (ja) | 2014-04-09 |
Family
ID=41721408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010526712A Expired - Fee Related JP5469068B2 (ja) | 2008-08-26 | 2009-08-25 | バイポーラ型炭化珪素半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5469068B2 (fr) |
| WO (1) | WO2010024240A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE535157C2 (sv) | 2010-07-14 | 2012-05-02 | Fairchild Semiconductor | Konduktivitetsmodulering i en bipolär transistor i kiselkarbid |
| SE535380C2 (sv) * | 2011-01-31 | 2012-07-17 | Fairchild Semiconductor | Bipolär transistor i kiselkarbid med övervuxen emitter |
| JP5699055B2 (ja) * | 2011-08-16 | 2015-04-08 | 新電元工業株式会社 | 炭化珪素半導体装置 |
| JP2015018859A (ja) * | 2013-07-09 | 2015-01-29 | 国立大学法人京都大学 | 半導体装置、半導体装置の製造方法および熱処理装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS645063A (en) * | 1987-06-29 | 1989-01-10 | Toshiba Corp | Hetero-junction bipolar transistor |
| JPH06244195A (ja) * | 1993-02-17 | 1994-09-02 | Sharp Corp | 半導体装置 |
| JP2002359378A (ja) * | 2001-03-28 | 2002-12-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2006351621A (ja) * | 2005-06-13 | 2006-12-28 | Honda Motor Co Ltd | バイポーラ型半導体装置およびその製造方法 |
| JP2007173841A (ja) * | 2005-12-22 | 2007-07-05 | Cree Inc | ベース領域上に炭化ケイ素保護層を有する炭化ケイ素バイポーラ接合トランジスタとその製造方法 |
| JP2007287782A (ja) * | 2006-04-13 | 2007-11-01 | Hitachi Ltd | メサ型バイポーラトランジスタ |
| JP2009054931A (ja) * | 2007-08-29 | 2009-03-12 | Hitachi Ltd | バイポーラ素子及びその製造方法 |
-
2009
- 2009-08-25 WO PCT/JP2009/064770 patent/WO2010024240A1/fr active Application Filing
- 2009-08-25 JP JP2010526712A patent/JP5469068B2/ja not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS645063A (en) * | 1987-06-29 | 1989-01-10 | Toshiba Corp | Hetero-junction bipolar transistor |
| JPH06244195A (ja) * | 1993-02-17 | 1994-09-02 | Sharp Corp | 半導体装置 |
| JP2002359378A (ja) * | 2001-03-28 | 2002-12-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2006351621A (ja) * | 2005-06-13 | 2006-12-28 | Honda Motor Co Ltd | バイポーラ型半導体装置およびその製造方法 |
| JP2007173841A (ja) * | 2005-12-22 | 2007-07-05 | Cree Inc | ベース領域上に炭化ケイ素保護層を有する炭化ケイ素バイポーラ接合トランジスタとその製造方法 |
| JP2007287782A (ja) * | 2006-04-13 | 2007-11-01 | Hitachi Ltd | メサ型バイポーラトランジスタ |
| JP2009054931A (ja) * | 2007-08-29 | 2009-03-12 | Hitachi Ltd | バイポーラ素子及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010024240A1 (fr) | 2010-03-04 |
| JPWO2010024240A1 (ja) | 2012-01-26 |
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