JP5447457B2 - LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a light emitting device including a light emitting element typified by OLED (Organic Light Emitting Diode) and an electronic apparatus including the light emitting device.

  The OLED has a configuration in which a solid light-emitting layer formed of an organic EL (Electro Luminescent) material is sandwiched between an anode and a cathode. As a light emitting device including an OLED, a light emitting device having a configuration in which a plurality of OLEDs are arranged as pixels on a substrate is known. In this light emitting device, each pixel is sealed and protected from the outside air. One sealing method is thin film sealing in which a thin film is formed on a substrate and a sealing layer is formed by the formed thin film. In thin film sealing, the sealing layer may have a single layer configuration as shown in Patent Document 1 or may have a multiple layer configuration as shown in Patent Document 2.

  FIG. 11 is a cross-sectional view of an end portion of a conventional light emitting device (single layer configuration). The plurality of pixels are arranged in the center (not shown) on the pixel substrate 501. Each pixel exists through the pixel partition wall 502 on the pixel substrate 501, and the light emission region of each pixel is defined by the pixel partition wall 502 on the pixel substrate 501. A cathode layer 503 is formed on the pixel substrate 501 so as to cover the pixel partition wall 502. The cathode layer 503 is a cathode common to a plurality of pixels, that is, a common cathode. A peripheral layer 504 is formed on the pixel substrate 501 between the pixel partition wall 502 and the peripheral edge of the pixel substrate 501. A sealing layer is formed on the pixel substrate 501 so as to cover the peripheral layer 504 and the cathode layer 503. The sealing layer is composed of a single thin film. Specifically, the gas barrier film 505 is formed of an inorganic material.

  FIG. 12 is a cross-sectional view of an end portion of a conventional light emitting device (multi-layer configuration). In this light emitting device, there is no peripheral layer between the pixel partition wall 502 and the peripheral edge of the pixel substrate 501. The sealing layer is composed of three layers of thin films. Specifically, an electrode protective film 506 formed on the pixel substrate 501, an organic buffer film 507 formed thereon, and a gas barrier film 508 formed thereon. Each of these thin films covers the cathode layer 503. The organic buffer film 507 is made of an organic material. The electrode protective film 506 and the gas barrier film 508 are each formed of an inorganic material and extend beyond the end of the organic buffer film 507.

Japanese Patent Laid-Open No. 11-74073 JP 2004-95199 A

  It is desirable that the frame width of the light emitting device having a configuration in which a plurality of pixels are arranged on the substrate is narrow. In particular, when the light-emitting device is used as a display device, it is important to narrow the frame. However, in the conventional light emitting device described above, the position of the end of the gas barrier film 505 (P1 in FIG. 11) and the position of the end of the organic buffer film 507 (P2 in FIG. 12) vary greatly from one individual to another. Therefore, it is necessary to use a wider substrate, and the width of the frame is wide.

  The factor that P1 and P2 vary greatly from one individual to another is the method of forming the sealing layer. Since the sealing layer is formed after the pixels are formed, it is preferable to adopt a formation method that has less adverse effect on the pixels. For example, when the pixel is an OLED, a vapor deposition method or a coating method is generally used. Employing a formation method that has little adverse effect on pixels is particularly important when forming a film that requires a certain thickness, such as the gas barrier film 505 and the organic buffer film 507. However, with the adoptable forming method, the position accuracy of the end of the formed layer is lowered. This is the reason why P1 and P2 vary greatly from one individual to another.

  The present invention has been made on the basis of the background described above, and it is possible to realize a narrow frame even if one or more thin films constituting the sealing layer are formed by a formation method with low positional accuracy. It is an object to provide a light-emitting device and an electronic device including the light-emitting element.

  In the following description, the light emitting element is, for example, an OLED. As the peripheral layer, a layer for protecting a circuit or wiring can be exemplified. As a circuit protected by the peripheral layer, a circuit for driving or controlling the light emitting element can be exemplified. Examples of the wiring protected by the peripheral layer include a wiring for supplying a current to the light emitting element and a wiring for supplying a current for driving the light emitting element.

A first light emitting device according to the present invention includes a substrate, a plurality of light emitting elements arranged on the substrate and having two electrodes sandwiching a light emitting layer, and formed on the substrate, and the two electrodes are insulated from each other. An insulating film, a peripheral layer formed on the substrate and positioned outside the insulating film, and a sealing layer formed on the substrate and covering the plurality of light emitting elements and the insulating film, The sealing layer is composed of one or more thin films, and the end of the thin film having the largest film thickness among the one or more thin films is positioned between the insulating film and the peripheral layer. It is characterized by. When the sealing layer is composed of one thin film, the number of films having the largest film thickness is one. When the sealing layer is composed of a plurality of thin films, the number of films having the largest film thickness is one or more.
In the first light emitting device, the periphery between the edge of the substrate and the end of the film having the largest film thickness among the thin films of one or more layers constituting the sealing layer covering the light emitting element and the insulating film There is a layer. Therefore, even if the position accuracy of the end of the film having the largest film thickness is low, the frame width can be narrowed if the position accuracy of the end of the peripheral layer is high. Moreover, the method of providing a peripheral layer is arbitrary. Therefore, the peripheral layer can be formed by a formation method with high positional accuracy. In addition, in the case where one or more thin films constituting the sealing layer include a film other than the thickest film, the included film has a serious adverse effect on the light-emitting element. It is possible to form by a forming method with high positional accuracy without exerting any influence. Therefore, according to the first light-emitting device, narrowing of the frame can be realized even when a thin film of one layer or a plurality of layers constituting the sealing layer is formed by a formation method with low positional accuracy.

A second light emitting device according to the present invention includes a substrate, a plurality of light emitting elements arranged on the substrate and having two electrodes sandwiching a light emitting layer, and formed on the substrate, and the two electrodes are insulated from each other. An insulating film, a peripheral layer formed on the substrate and positioned outside the insulating film, and a sealing layer formed on the substrate and covering the plurality of light emitting elements and the insulating film, The sealing layer includes a plurality of thin films, and the plurality of thin films includes an organic buffer film formed of an organic material, and the organic buffer is provided between the insulating film and the peripheral layer. The edge of the membrane is located.
In the second light emitting device, a peripheral layer exists between the edge of the substrate and the edge of the organic buffer film covering the light emitting element and the insulating film. Therefore, even if the position accuracy of the edge of the organic buffer film is low, the frame width can be narrowed if the position accuracy of the edge of the peripheral layer is high. Moreover, the method of providing a peripheral layer is arbitrary. Therefore, the peripheral layer can be formed by a formation method with high positional accuracy. In addition, it is possible to form a film other than the organic buffer film among a plurality of thin films constituting the sealing layer by a formation method with high positional accuracy without seriously affecting the light emitting element. Therefore, according to the second light emitting device, it is possible to realize a narrow frame even if the organic buffer film constituting the sealing layer is formed by a formation method with low positional accuracy.

  In the second light emitting device, a seal provided on the substrate, surrounding the insulating film, and supporting another substrate different from the substrate is provided, the thin film of the plurality of layers is formed of an inorganic material, and the organic A gas barrier film covering the buffer film and extending in a direction inclined with respect to the substrate over a length according to the thickness of the organic buffer film in the vicinity of the end of the organic buffer film; The part extending in the inclined direction and the seal may be separated from each other. According to this aspect, since the seal does not contact the inclined portion of the gas barrier film, the possibility that the gas barrier film is damaged can be suppressed to a low level.

  In this aspect or the second light emitting device, a wiring that is formed on the substrate and extends linearly is provided, and an end of the organic buffer film between the insulating film and the peripheral layer is provided on the wiring. The edge of the organic buffer film on the wiring may be substantially parallel to the wiring. By doing so, the end of the organic buffer film is linearly formed on a flat surface, so that the sealing performance is improved. The wiring disposed below the end of the organic buffer film is arbitrary, and may be, for example, a wiring for supplying a current to the light emitting element, or a wiring for supplying a current that drives the light emitting element. It may be.

A third light emitting device according to the present invention includes a substrate, a plurality of light emitting elements arranged on the substrate and having two electrodes sandwiching a light emitting layer, and formed on the substrate, and the two electrodes are insulated from each other. An insulating film, a peripheral layer formed on the substrate and positioned outside the insulating film, and a sealing layer formed of an inorganic material on the substrate and covering the plurality of light emitting elements and the insulating film. The sealing layer is composed of one thin film, and the one thin film is a gas barrier film formed of an inorganic material, and the gas barrier film is interposed between the insulating film and the peripheral layer. You may make it the edge of be located.
In the third light emitting device, a peripheral layer exists between the end of the substrate and the end of the gas barrier film covering the light emitting element and the insulating film. Therefore, even if the position accuracy of the edge of the gas barrier film is low, the width of the frame can be narrowed if the position accuracy of the edge of the peripheral layer is high. Moreover, the method of providing a peripheral layer is arbitrary. Therefore, the peripheral layer can be formed by a formation method with high positional accuracy. The sealing layer is composed only of a gas barrier film. Therefore, according to the second light emitting device, it is possible to realize a narrow frame even when the gas barrier film constituting the sealing layer is formed by a formation method with low positional accuracy.

  In the third light emitting device, the gas barrier film includes a seal provided on the substrate, surrounding the insulating film, and supporting another substrate different from the substrate, and the gas barrier film is formed near the end of the insulating film. It extends in a direction inclined with respect to the substrate over a length corresponding to the thickness, and the portion extending in the inclined direction of the gas barrier film is separated from the seal. Also good. According to this aspect, since the seal does not contact the inclined portion of the gas barrier film, the possibility that the gas barrier film is damaged can be suppressed to a low level.

  In this aspect or the third light emitting device, a wiring formed on the substrate and extending linearly is provided, and an end of the gas barrier film between the insulating film and the peripheral layer is formed on the wiring. It is also possible that the end of the gas barrier film on the wiring is substantially parallel to the wiring. By doing so, the end of the gas barrier film is linearly formed on a flat surface, so that the sealing performance is improved. Note that the wiring disposed under the edge of the gas barrier film is arbitrary, and may be, for example, a wiring for supplying a current to the light emitting element, or a wiring for supplying a current that drives the light emitting element. There may be.

  An electronic apparatus according to the present invention includes any one of the light emitting devices described above. Therefore, there are effects resulting from the various effects described above.

It is a schematic plan view which shows a part of structure of the light-emitting device 1 which concerns on the 1st Embodiment of this invention. 3 is a circuit diagram illustrating details of a unit circuit P of the light emitting device 1. FIG. FIG. 2 is a cross-sectional view taken along line A-A ′ of the light emitting device 1 shown in FIG. 1. It is a schematic plan view which shows a part of structure of the light-emitting device 2 which concerns on the 2nd Embodiment of this invention. FIG. 5 is a cross-sectional view taken along line B-B ′ of the light emitting device 2 shown in FIG. 4. It is a partial cross section figure of the light-emitting device 3 which concerns on the 3rd Embodiment of this invention. It is a partial cross section figure of the light-emitting device 4 which concerns on the 4th Embodiment of this invention. 1 is a diagram showing a configuration of a mobile personal computer that employs each light emitting device according to an embodiment of the present invention as a display device. It is a figure which shows the structure of the mobile telephone which employ | adopted each light-emitting device which concerns on embodiment of this invention as a display apparatus. It is a figure which shows the structure of the portable information terminal which employ | adopted each light-emitting device which concerns on embodiment of this invention as a display apparatus. It is sectional drawing of the edge part of the conventional light-emitting device (single-layer structure). It is sectional drawing of the edge part of the conventional light-emitting device (multilayer structure).

  Embodiments according to the present invention will be described below with reference to the accompanying drawings. In the drawings, the ratio of dimensions of each part is appropriately changed from the actual one.

<First Embodiment>
FIG. 1 is a schematic plan view showing a part of the configuration of the light emitting device 1 according to the first embodiment of the present invention. The light emitting device 1 includes a substrate 10. A connection terminal 11 is formed at the end of the substrate 10. Various signals and power supply voltage are supplied to the connection terminal 11 from an external circuit. A rectangular pixel region G and a peripheral region H located between the pixel region G and the outer periphery of the substrate 10 are provided on the substrate 10. In the peripheral region H, a scanning line driving circuit 12 and a data line driving circuit (not shown) are formed. In the pixel region G, a plurality of scanning lines 13 and a plurality of data lines 14 are formed, and a plurality of unit circuits (pixel circuits) P are provided in the vicinity of each of the intersections.

  FIG. 2 is a circuit diagram illustrating details of the unit circuit P of the light emitting device 1. Each unit circuit P includes an n-channel transistor T1, a p-channel transistor T2, a capacitor C, and an OLED 50. The source electrode of the p-channel transistor T2 is connected to the current supply line 15, while the drain electrode is connected to the anode 81 of the OLED 50. The current supply line 15 is a wiring for supplying a current for driving the OLED 50. Further, a capacitive element C is provided between the source electrode and the gate electrode of the transistor T2. The gate electrode of the n-channel transistor T1 is connected to the scanning line 13, its source electrode is connected to the data line 14, and its drain electrode is connected to the gate electrode of the transistor T2.

  When the scanning line driving circuit 12 selects the scanning line 13 corresponding to the unit circuit P, the unit circuit P is turned on and supplied from the data line driving circuit (not shown) via the data line 14. The data signal is held in the internal capacitive element C. Then, the transistor T2 supplies a current corresponding to the level of the data signal to the OLED 50. As a result, the OLED 50 emits light with a luminance corresponding to the level of the data signal.

  As shown in FIG. 1, a cathode power supply wiring 16 is formed in a U shape surrounding the pixel region G in the peripheral region H on the substrate 10. That is, the cathode power supply wiring 16 extends linearly along the circumference of the pixel region G, and is bent at substantially right angles at two locations. The cathode power supply wiring 16 is disposed between the scanning line driving circuit 12 and the pixel region G. The cathode power supply wiring 16 is a wiring for flowing a current for driving the OLED 50. The OLED 50 includes an anode (one of two electrodes) 81, a cathode (the other of two electrodes), and a light emitting functional layer sandwiched between both electrodes.

  FIG. 3 is a cross-sectional view taken along line A-A ′ of the light emitting device 1 shown in FIG. 1. A base protective layer (not shown) mainly composed of silicon oxide is formed on the substrate 10, and a wiring layer 17 including a metal wiring layer is formed thereon. In the wiring layer 17, the transistor T <b> 1 and the transistor T <b> 2 are provided for each unit circuit P in the pixel region G. The wiring layer 17 is provided with a scanning line driving circuit 12 and a data line driving circuit (not shown) in the peripheral region H. These circuits have circuit elements such as transistors and capacitors. The metal wiring layer is formed of a conductive material such as aluminum, and a part thereof includes electrodes of each transistor, a scanning line 13, a data line 14, a current supply line 15, and a cathode power supply wiring 16. It has become.

  On the wiring layer 17, the anode 81 of the OLED 50 is provided for each unit circuit P in the pixel region G. Each anode 81 is electrically connected to the drain electrode of the transistor T2 in the unit circuit P including itself through a corresponding contact hole. An insulating film 18 is formed on the wiring layer 17 and each anode 81. The insulating film 18 is a film that insulates the anode 81 and the cathode of the OLED 50 from each other, and is formed of acrylic or polyimide. In the pixel region G, the wiring layer is exposed so that at least a part of the upper surface of each anode 81 is exposed. 17 and the anode 81 are covered. The outer end of the insulating film 18 is located in the peripheral region H. A light emitting functional layer 82 is formed on the anode 81 in the region surrounded by the insulating film 18. The end surface of the light emitting functional layer 82 is in contact with the insulating film 18. The light emitting functional layer 82 includes a light emitting layer formed of an organic EL material. The organic EL material may be a low molecular material or a high molecular material. In addition to the light emitting layer, the light emitting functional layer 82 may include a hole injection layer, a hole transport layer, an electron transport layer, a hole block layer, and a part or all of the electron block layer.

A cathode layer 19 is formed on the insulating film 18 and the light emitting functional layer 82. The cathode layer 19 is formed of a conductive material, and the formation is performed, for example, by vapor deposition. The cathode layer 19 may be composed of a plurality of layers. The cathode layer 19 is formed over the entire pixel region G and the peripheral region H, and is provided in common to the plurality of unit circuits P. A part of the cathode layer 19 becomes a cathode of the OLED 50 in the corresponding unit circuit P. In the peripheral region H, the cathode layer 19 overlaps the cathode power supply wiring 16 and is electrically connected to the cathode power supply wiring 16 through a contact hole CH formed in the wiring layer 17. The end of the cathode layer 19 is located on the wiring layer 17.
As described above, the light emitting functional layer 82 is provided according to each unit circuit P, and the insulating film 18 is provided so as to partition a region where the light emitting functional layer 82 is formed. Here, when viewed in plan, a configuration in which a part of the light emitting functional layer 82 and the insulating film 18 overlap each other is adopted, but the present invention is not limited to this, and the light emitting functional layer 82 and the insulating film 18 are exclusive. Alternatively, a configuration (a configuration in which the light emitting functional layer and the insulating film 18 do not overlap each other) may be employed.
As another configuration example, the light emitting functional layer and the cathode layer 19 may be provided in common to the plurality of unit circuits P at least in the pixel region. At this time, a region where the light emitting functional layer emits light is partitioned by the insulating film 18, and a region that emits light is provided according to each anode 81. This region that emits light may overlap the insulating film 18, such as the peripheral edge of the insulating film 18. Here, the light emitting functional layer and the cathode layer 19 are provided so as to cover the insulating film 18 and the anode 81.

  A peripheral wall 20 is formed in the peripheral region H on the wiring layer 17. The peripheral wall 20 is made of acrylic or polyimide. Here, it is desirable that the insulating film 18 is formed in a lump by the same process. That is, the insulating film 18 and the peripheral wall 20 in the present embodiment are made of the same insulating layer, which insulates the two electrodes of the OLED 50 and driving circuits such as the scanning line driving circuit 12 and the data line driving circuit. It is desirable to be provided so as to cover. The peripheral wall 20 is a structure for protecting the scanning line driving circuit 12 and the data line driving circuit (not shown), and is provided so as to cover the scanning line driving circuit 12 and the data line driving circuit (not shown). Yes.

  On the wiring layer 17, the cathode layer 19, and the peripheral wall 20, a sealing layer for protecting the OLED 50 from the outside air is formed. The sealing layer is formed by laminating three layers of thin films. The three-layered thin film includes the cathode protective film 21 formed on the wiring layer 17, the cathode layer 19 and the peripheral wall 20, the organic buffer film 22 formed on the cathode protective film 21, the wiring layer 17, and the cathode protection. A gas barrier film 23 formed on the film 21 and the organic buffer film 22.

  The cathode protective film 21 is intended to protect the cathode layer 19 and facilitate the formation of the organic buffer film 22, and extends at least covering the cathode layer 19. In the present embodiment, the end of the cathode protective film 21 is located outside the peripheral wall 20. The cathode protective film 21 is made of an inorganic material. Examples of the inorganic material include silicon oxides such as silicon oxide and silicon oxynitride, and inorganic oxides such as metal oxides such as titanium oxide.

  The organic buffer film 22 is for filling a step of the cathode protective film 21 generated for each pixel due to the influence of the shape of the insulating film 18 and preventing stress concentration in the gas barrier film 23, and is made of an organic material. The organic buffer film 22 is formed by, for example, a coating method (for example, a printing method) so that the upper surface is flat. The organic buffer film 22 extends over the cathode layer 19 and is formed at least above the insulating film 18 in at least the pixel region. An end 221 of the organic buffer film 22 is a substantially rectangular shape surrounding the pixel region G, and is located between the insulating film 18 and the peripheral wall 20. Three sides of the end 221 of the organic buffer film 22 are located on the cathode power supply wiring 16. An end 221 on the cathode power supply wiring 16 is substantially parallel to the cathode power supply wiring 16.

  The gas barrier film 23 is for preventing intrusion of outside air such as oxygen and moisture, and extends over the cathode protective film 21 and the organic buffer film 22. Further, the gas barrier film 23 extends in a direction inclined with respect to the substrate 10 over a length corresponding to the thickness of the organic buffer film 22 in the vicinity of the end 221 of the organic buffer film 22. The gas barrier film 23 is formed of an inorganic material such as a silicon compound or silicon oxide. In the present embodiment, the gas barrier film 23 is in contact with the underlying layer (the cathode protection film 21 in the present embodiment) in a region between the region where the peripheral wall 20 is provided and the region where the insulating film 18 is provided. ing. The underlayer may be an insulating film included in the circuit layer 17. The underlayer is preferably a silicon compound such as silicon oxide, silicon oxynitride, or silicon nitride.

The position of the end 221 of the organic buffer film 22 may be shifted within the range of L1 shown in FIG. However, even if the position of the end 221 is shifted within this range, the peripheral wall 20 is still present between the end of the substrate 10 and the end 221 of the organic buffer film 22 covering the OLED 50 and the insulating film 18. Absent. Therefore, according to the light emitting device 1, even if the position accuracy of the end 221 is low, the width of the frame can be narrowed if the position accuracy of the end of the peripheral wall 20 is high.
Moreover, in the light emitting device 1, the peripheral wall 20 can be formed before the OLED 50 is formed. That is, a formation method that increases the positional accuracy of the end of the peripheral wall 20 can be employed.
In addition, a film other than the organic buffer film 22 (the cathode protective film 21 and the gas barrier film 23) among the three thin films constituting the sealing layer is formed by a formation method with high positional accuracy without seriously affecting the OLED 50. Is possible.
Therefore, according to the light emitting device 1, it is possible to realize a narrow frame even if the organic buffer film 22 constituting the sealing layer is formed by a formation method with low positional accuracy.

In the light emitting device 1, the three sides of the end 221 of the organic buffer film 22 are substantially parallel to the cathode power supply wiring 16 and are located on the cathode power supply wiring 16. That is, many sections of the end 221 of the organic buffer film 22 are located on a flat surface. Therefore, the sealing performance is improved. The wiring disposed below the end 221 of the organic buffer film 22 is not limited to the cathode power supply wiring 16. For example, a wiring connected to the current supply line 15 and supplying a current to the unit circuit P may be used. The configuration of the unit circuit P described above is merely an example.
In other words, the features of the present embodiment are as follows. In this embodiment, the insulating film 18 and the peripheral wall 20 are provided by the same insulating layer, and this insulating layer is provided so as to cover both the pixel region and the drive circuit, and the pixel region is provided. There is a region where no insulating layer is provided between the region where the driver circuit is provided and the region where the driver circuit is provided. An end 221 of the organic buffer film 22 is located in a region where the insulating layer is not provided, and the gas barrier layer 23 is in contact with the base layer in this region. It is preferable to provide wiring connected to the cathode power supply wiring 16 and the current supply line 15 in the region where the insulating layer is not provided. Here, the driving circuit may be a scanning line driving circuit, a data line driving circuit, or an inspection circuit.

<Second Embodiment>
FIG. 4 is a schematic plan view showing a part of the configuration of the light emitting device 2 according to the second embodiment of the present invention, and FIG. 5 is a view taken along the line BB ′ of the light emitting device 2 shown in FIG. It is sectional drawing. The light emitting device 2 is different from the light emitting device 1 in that the sealing layer is formed of a single thin film. In the light emitting device 2, a sealing layer that protects the OLED 50 from the outside air is formed on the wiring layer 17 and the cathode layer 19. This sealing layer is composed of a single thin film. This thin film is a gas barrier film 24 formed on the wiring layer 17 and the cathode layer 19.

  The gas barrier film 24 is for preventing intrusion of outside air such as oxygen and moisture, and extends over the cathode protective film 21. Further, the gas barrier film 24 extends in a direction inclined with respect to the substrate 10 over a length corresponding to the thickness of the insulating film 18 in the vicinity of the outer end of the insulating film 18. In the present embodiment, the gas barrier film 23 is included in at least the foundation layer (in the present embodiment, the circuit layer 17) in a region between the region where the peripheral wall 20 is provided and the region where the insulating film 18 is provided. Insulating film or wiring layer). The underlayer is preferably a silicon compound such as silicon oxide, silicon oxynitride, or silicon nitride. An end 241 of the gas barrier film 24 has a substantially rectangular shape surrounding the pixel region G, and is located between the insulating film 18 and the peripheral wall 20. Three sides of the end 241 of the gas barrier film 24 are located on the cathode power supply wiring 16. An end 241 on the cathode power supply wiring 16 is substantially parallel to the cathode power supply wiring 16. The gas barrier film 24 is formed of an inorganic material such as a silicon compound or silicon oxide. Examples of the method for forming the gas barrier film 24 include vapor deposition.

  The position of the end 241 of the gas barrier film 24 may be deviated within the range L2 shown in FIG. However, even if the position of the end 241 is deviated in this range, the peripheral wall 20 is still present between the end of the substrate 10 and the end 241 of the gas barrier film 24 covering the OLED 50 and the insulating film 18. . Therefore, according to the light emitting device 2, even if the position accuracy of the end 241 is low, the frame width can be narrowed if the position accuracy of the end of the peripheral wall 20 is high. Therefore, according to the light emitting device 2, even if the gas barrier film 24 constituting the sealing layer is formed by a formation method with low positional accuracy, it is possible to realize a narrow frame.

In the light emitting device 2, three sides of the end 241 of the gas barrier film 24 are substantially parallel to the cathode power supply wiring 16 and are located on the cathode power supply wiring 16. Therefore, the sealing performance is improved. Note that the wiring disposed under the end 241 of the gas barrier film 24 is not limited to the cathode power supply wiring 16 and that the configuration of the unit circuit P shown in FIG. is there.
In other words, the features of the present embodiment are as follows. In this embodiment, the insulating film 18 and the peripheral wall 20 are provided by the same insulating layer, and this insulating layer is provided so as to cover both the pixel region and the drive circuit, and the pixel region is provided. There is a region where no insulating layer is provided between the region where the driver circuit is provided and the region where the driver circuit is provided. The gas barrier film 23 is in contact with the base layer in the region where the insulating layer is not provided. It is preferable to provide wiring connected to the cathode power supply wiring 16 and the current supply line 15 in the region where the insulating layer is not provided. Here, the driving circuit may be a scanning line driving circuit, a data line driving circuit, or an inspection circuit.

<Third Embodiment>
FIG. 6 is a partial cross-sectional view of the light emitting device 3 according to the third embodiment of the present invention. The light emitting device 3 is different from the light emitting device 1 in that it has a substrate in addition to the substrate 10. The other substrate is a counter substrate 25 facing the substrate 10 with the OLED 50 interposed therebetween. The counter substrate 25 is a color filter substrate, for example, and is supported by a seal 26.
A filler made of resin is filled between the side of the substrate 10 where the OLED 50 is provided and the counter substrate 25.
In the first and second embodiments, the gas barrier film 23 prevents the outside air from reaching the OLED 50. However, in this embodiment, the sealing performance is further improved by the filler, the seal 26, and the counter substrate 25. I am letting.

  The seal 26 is made of, for example, resin, and is provided on the gas barrier film 23 so as to surround the insulating film 18. One end of the seal 26 is fixed to the gas barrier film 23, and the other end is fixed to the counter substrate 25. The portion of the gas barrier film 23 that is in contact with the seal 26 is a portion on the peripheral wall 20. That is, the seal 26 and the portion 231 extending in the direction inclined with respect to the substrate 10 of the gas barrier film 23 are separated from each other.

If the seal 26 is in contact with the portion 231, the gas barrier film 23 is easily damaged due to stress concentration. However, as described above, in the light emitting device 3, the two are not in contact with each other. Moreover, the upper surface of the peripheral wall 20 is substantially flat. Therefore, according to the light emitting device 3, in addition to the effect obtained by the light emitting device 1, the effect that the possibility that the gas barrier film 23 is damaged can be suppressed low.
Compared with the configuration in which the gas barrier film 23 and the organic buffer film 22 cover the peripheral wall 20 and the pixel region and the seal 26 is disposed in the outer region, the seal 26 and the peripheral wall 20 overlap in this embodiment. Therefore, the light emitting device 3 can be narrowed. In addition, since the wiring such as the cathode power supply wiring 16 can be arranged in a margin area provided so that the end 221 of the organic buffer film 22 and the seal 26 do not overlap with each other, the light emitting device 3 can be further narrowed. Can be planned.

<Fourth embodiment>
FIG. 7 is a partial cross-sectional view of the light emitting device 4 according to the fourth embodiment of the present invention. The light emitting device 4 is different from the light emitting device 2 in that it has a counter substrate 25 in addition to the substrate 10. The counter substrate 25 is supported by a seal 27. The seal 27 is made of, for example, resin, and is provided on the wiring layer 17 and the peripheral wall 20 so as to surround the insulating film 18. One end of the seal 27 is fixed to the wiring layer 17 and the peripheral wall 20, and the other end is fixed to the counter substrate 25. The seal 27 and the portion 242 extending in a direction inclined with respect to the substrate 10 of the gas barrier film 24 are separated from each other.

If the seal 27 is in contact with the portion 242, the gas barrier film 24 is likely to be damaged due to stress concentration. However, as described above, in the light emitting device 4, the two are not in contact with each other. In the first place, the seal 27 and the gas barrier film 24 are separated from each other. Therefore, according to the light emitting device 4, in addition to the effect obtained by the light emitting device 2, the effect that the possibility that the gas barrier film 24 is damaged can be suppressed low.
Further, as in the third embodiment, the light emitting device 4 can be a narrow frame.

<Modification>
In each of the above-described embodiments, the sealing layer is composed of one or three thin films, but may be composed of two thin films or may be composed of four or more thin films. In any case, the film having the largest film thickness is formed by a formation method with low position accuracy of the edge of the film to be formed. Further, a plurality of films may be formed by a forming method with low positional accuracy of the edge of the formed film. The circuit protected by the peripheral wall is not limited to the scanning line driving circuit, and may be a data line driving circuit or an inspection circuit. Moreover, what is protected by the peripheral wall is not limited to a circuit. For example, the wiring may be protected by a peripheral wall. Further, the light emitting element is not limited to the OLED.

<Application example>
Next, electronic devices to which the light emitting devices according to the above-described embodiments are applied will be described.
FIG. 8 is a diagram illustrating a configuration of a mobile personal computer that employs each of the light-emitting devices described above as a display device. The personal computer 2000 includes a display device 2003 and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002.

  FIG. 9 is a diagram illustrating a configuration of a mobile phone that employs each of the light-emitting devices described above as a display device. A cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and a display device 3003. By operating the scroll button 3002, the screen displayed on the display device 3003 is scrolled.

  FIG. 10 is a diagram illustrating a configuration of a personal digital assistant (PDA) that employs each of the light-emitting devices described above as a display device. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and a display device 4003. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed on the display device 4003.

  Note that electronic devices to which the light-emitting device according to the present invention is applied include devices such as televisions and video cameras, and electrophotographic image forming apparatuses in addition to those shown in FIGS. Can be mentioned.

  DESCRIPTION OF SYMBOLS 1-4 ... Light-emitting device, 10 ... Board | substrate, 12 ... Scanning line drive circuit, 13 ... Scanning line, 14 ... Data line, 15 ... Current supply line, 16 ... Power supply wiring (wiring) for cathodes, 17 ... Wiring layer, 18 DESCRIPTION OF SYMBOLS ... Insulating film, 19 ... Cathode layer, 20 ... Peripheral wall (peripheral layer), 2000 ... Personal computer (electronic device), 21 ... Cathode protective film, 22 ... Organic buffer film, 23, 24 ... Gas barrier film, 25 ... Opposite substrate (Other substrates), 26, 27 ... seal, 3000 ... mobile phone (electronic device), 4000 ... portable information terminal (electronic device), G ... light emitting region, H ... peripheral region, P ... unit circuit.

Claims (8)

A substrate,
A plurality of light emitting elements arranged on the substrate so as to constitute a plurality of pixels in a pixel region, and having an anode and a cathode sandwiching a light emitting layer;
An insulating layer provided to partition each of the plurality of pixels;
A cathode protective film which covers at least the cathode and is provided on the cathode so as to be in contact with the cathode, and which protects the cathode;
A buffer film provided on the cathode protective film;
A peripheral wall provided in the same layer as the insulating layer and provided to cover a drive circuit provided outside the pixel region;
The cathode protective film covers the peripheral wall;
In the cross section including the pixel region and the peripheral wall of the substrate, the peripheral wall has a first end, and a second end located between the first end and the end of the substrate. Have
In the cross section, the second end is located between the end of the buffer film and the end of the substrate ,
In the cross section, the first end portion is located between an end portion of the buffer film and the second end portion . Disposed between the end portion of the substrate and the pixel region further has a power distribution line connected to said cathode,
Wherein a third end power distribution line in the cross section, and a fourth end portion located between the end and the third end portion of the substrate,
The second end is located between an end of the substrate and the fourth end;
The light emitting device according to claim 1, wherein an end portion of the buffer film is located between the third end portion and the fourth end portion.   The light emitting device according to claim 1, wherein the peripheral wall is separated from the insulating layer in the cross section.   The light-emitting device according to claim 1, wherein the buffer film is provided so as not to overlap the drive circuit.   The light emitting device according to claim 1, wherein the driving circuit is a scanning line driving circuit.   The light emitting device according to claim 1, wherein the driving circuit is a data line driving circuit.   The light emitting device according to claim 1, wherein the buffer film is made of an organic material.   An electronic apparatus comprising the light emitting device according to claim 1.

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