JP5412682B2 - 抵抗式ひずみゲージを有する圧力センサ - Google Patents

抵抗式ひずみゲージを有する圧力センサ Download PDF

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Publication number
JP5412682B2
JP5412682B2 JP2008555726A JP2008555726A JP5412682B2 JP 5412682 B2 JP5412682 B2 JP 5412682B2 JP 2008555726 A JP2008555726 A JP 2008555726A JP 2008555726 A JP2008555726 A JP 2008555726A JP 5412682 B2 JP5412682 B2 JP 5412682B2
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Japan
Prior art keywords
diaphragm
strain gauge
cavity
layer
sacrificial layer
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Expired - Fee Related
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JP2008555726A
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English (en)
Japanese (ja)
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JP2009527750A (ja
Inventor
ドラピエール、ジル
グラング、ユベール
レ、パトリス
Original Assignee
コミシリア ア レネルジ アトミック エ オ エナジーズ オルタネティヴズ
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0044—Constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP2008555726A 2006-02-24 2007-01-26 抵抗式ひずみゲージを有する圧力センサ Expired - Fee Related JP5412682B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0601652A FR2897937B1 (fr) 2006-02-24 2006-02-24 Capteur de pression a jauges resistives
FR0601652 2006-02-24
PCT/EP2007/050766 WO2007096225A1 (fr) 2006-02-24 2007-01-26 Capteur de pression a jauges resistives

Publications (2)

Publication Number Publication Date
JP2009527750A JP2009527750A (ja) 2009-07-30
JP5412682B2 true JP5412682B2 (ja) 2014-02-12

Family

ID=37076363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008555726A Expired - Fee Related JP5412682B2 (ja) 2006-02-24 2007-01-26 抵抗式ひずみゲージを有する圧力センサ

Country Status (5)

Country Link
US (1) US8393223B2 (fr)
EP (1) EP1987338B1 (fr)
JP (1) JP5412682B2 (fr)
FR (1) FR2897937B1 (fr)
WO (1) WO2007096225A1 (fr)

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US7775119B1 (en) * 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
FR2951014B1 (fr) * 2009-10-06 2011-11-25 Commissariat Energie Atomique Structure d'actionnement piezoelectrique comportant une jauge de contrainte piezoresistive integree et son procede de realisation
RU2484435C1 (ru) * 2012-03-05 2013-06-10 Евгений Михайлович Белозубов Способ измерения давления, способ калибровки и датчик давления на основе нано- и микроэлектромеханической системы
RU2487328C1 (ru) * 2012-04-09 2013-07-10 Евгений Михайлович Белозубов Способ изготовления высокостабильного датчика давления на основе тонкопленочной нано- и микроэлектромеханической системы
KR101410683B1 (ko) 2012-12-24 2014-06-24 디케이 유아이엘 주식회사 지름 측정 장치
US20150157016A1 (en) * 2013-12-05 2015-06-11 Sumitomo Chemical Company, Limited Method of controlling weeds
WO2015089175A1 (fr) * 2013-12-11 2015-06-18 The Board Of Regents Of The University Of Texas System Dispositifs et procédés pour mesurer des paramètres
US9810679B2 (en) 2014-04-02 2017-11-07 Colorado School Of Mines Intelligent pad foot soil compaction devices and methods of using same
DE102014207480A1 (de) * 2014-04-17 2015-10-22 Robert Bosch Gmbh Vorrichtung zum Erfassen eines Parameters eines Gases, Verfahren zum Betreiben einer derartigen Vorrichtung und Messsystem zum Bestimmen eines Parameters eines Gases
FR3032791B1 (fr) * 2015-02-18 2018-09-07 L'essor Francais Electronique Capteur de pression miniature a membrane metallique et procede de fabrication
CN105036054B (zh) * 2015-05-29 2016-10-05 歌尔股份有限公司 一种mems压力传感器及其制造方法
US9804046B2 (en) * 2015-10-27 2017-10-31 DunAn Sensing, LLC Pressure sensor with support structure for non-silicon diaphragm
CN209326840U (zh) 2018-12-27 2019-08-30 热敏碟公司 压力传感器及压力变送器
CN118209243B (zh) * 2024-05-20 2024-08-16 北京量子信息科学研究院 基于超导量子干涉仪的气体压力传感器芯片及其制备方法
CN118209244B (zh) * 2024-05-20 2024-08-16 北京量子信息科学研究院 基于超导量子干涉仪的气体压力传感器芯片及其制备方法

Family Cites Families (30)

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US4320664A (en) * 1980-02-25 1982-03-23 Texas Instruments Incorporated Thermally compensated silicon pressure sensor
US4651120A (en) * 1985-09-09 1987-03-17 Honeywell Inc. Piezoresistive pressure sensor
US4766666A (en) * 1985-09-30 1988-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor and method of manufacturing the same
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
WO1989003592A1 (fr) * 1987-10-07 1989-04-20 Kabushiki Kaisha Komatsu Seisakusho Capteur de pression a film mince semi-conducteur et procede de production
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
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JPH10148591A (ja) * 1996-09-19 1998-06-02 Fuji Koki Corp 圧力検出装置
US5879572A (en) * 1996-11-19 1999-03-09 Delco Electronics Corporation Method of protecting silicon wafers during wet chemical etching
US5955659A (en) * 1998-01-13 1999-09-21 Massachusetts Institute Of Technology Electrostatically-actuated structures for fluid property measurements and related methods
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
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JP2000124468A (ja) * 1998-10-21 2000-04-28 Denso Corp 半導体圧力センサ
DE10144271A1 (de) * 2001-09-08 2003-03-27 Bosch Gmbh Robert Sensorelement zur Erfassung einer physikalischen Messgröße zwischen tribologisch hoch beanspruchten Körpern
JP3778128B2 (ja) * 2002-05-14 2006-05-24 株式会社デンソー メンブレンを有する半導体装置の製造方法
EP1692457A4 (fr) * 2003-12-11 2007-09-26 Proteus Biomedical Inc Capteurs de pression implantables
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US7622782B2 (en) * 2005-08-24 2009-11-24 General Electric Company Pressure sensors and methods of making the same

Also Published As

Publication number Publication date
FR2897937A1 (fr) 2007-08-31
US8393223B2 (en) 2013-03-12
EP1987338B1 (fr) 2019-04-24
US20100031752A1 (en) 2010-02-11
JP2009527750A (ja) 2009-07-30
EP1987338A1 (fr) 2008-11-05
FR2897937B1 (fr) 2008-05-23
WO2007096225A1 (fr) 2007-08-30

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