JP5394659B2 - Semiconductor wafer - Google Patents

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JP5394659B2
JP5394659B2 JP2008147628A JP2008147628A JP5394659B2 JP 5394659 B2 JP5394659 B2 JP 5394659B2 JP 2008147628 A JP2008147628 A JP 2008147628A JP 2008147628 A JP2008147628 A JP 2008147628A JP 5394659 B2 JP5394659 B2 JP 5394659B2
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芳昭 杉下
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リンテック株式会社
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本発明は、半導体ウエハに係り、更に詳しくは、外縁側の厚みを、それ以外の領域の厚みより相対的に大きく形成した半導体ウエハに関する。 The present invention relates to a semiconductor upper teeth, and more particularly, the thickness of the outer edge, relates to a semiconductor upper blade which is relatively larger than the thickness of other regions.
近時、半導体ウエハ(以下、単に、「ウエハ」と称する)にあっては、極薄研削が求められる反面、ウエハ直径が大型化する傾向がある。このため、極薄に研削されたウエハの搬送において、ウエハはその自重によって反り返ったような状態で搬送されるため、割れてしまうという不都合がある。ここで、かかる不都合を回避すべく、特許文献1に開示される形態としたウエハが利用されている。同文献では、ウエハの外縁側の厚みが、それ以外の領域の厚みより相対的に大きくなるように研削することにより、凹部を形成してこの外縁が残存円周部とされて補強材の役目をし、ウエハが損傷することを防止できるようになっている。   Recently, in semiconductor wafers (hereinafter simply referred to as “wafers”), ultra-thin grinding is required, but the wafer diameter tends to increase. For this reason, in transporting a wafer that has been ground to an extremely thin thickness, the wafer is transported in a state of being warped by its own weight, so that there is a disadvantage that the wafer is broken. Here, in order to avoid such an inconvenience, a wafer having a form disclosed in Patent Document 1 is used. In this document, by grinding so that the thickness of the outer edge side of the wafer is relatively larger than the thickness of the other regions, a recess is formed, and this outer edge is made the remaining circumferential portion, which serves as a reinforcing material. Thus, the wafer can be prevented from being damaged.
ウエハの搬送装置として、上述のような反り返りを防止するために、ウエハを全面で吸着保持する構成が知られている(特許文献2参照)。また、他の搬送装置として、ウエハの外周縁複数箇所を把持して搬送する構成も知られている(特許文献3参照)。   As a wafer transfer device, a configuration is known in which a wafer is sucked and held over the entire surface in order to prevent the above-described warping (see Patent Document 2). As another transfer device, a configuration is also known in which a plurality of locations on the outer peripheral edge of the wafer are held and transferred (see Patent Document 3).
特開2007−19379号公報JP 2007-19379 A 特開2003−234392号公報JP 2003-234392 A 特開2000−21951号公報JP 2000-21951 A
しかしながら、特許文献2のような搬送装置で特許文献1のような凹部が形成されたウエハを搬送する場合、ウエハを全面吸着する吸着パッドによって、ウエハの凹部内が減圧されることにより、凹部の底を吸い上げてしまってウエハを損傷させてしまう、という不都合がある。
更に、特許文献3のような搬送装置で凹部が形成されたウエハを搬送する場合、ウエハを把持する力が強いと、ウエハを割ってしまう、という不都合がある。
そこで、凹部の内側起立面に複数のチャック部材を押し付けて保持、搬送することが考えられるが、特許文献1のウエハにあっては、内側起立面がウエハの回路面に対して直交する方向に向けられているため、チャック部材の当接面にウエハの脱落を規制するものが何もなく、搬送中にウエハが脱落し易いという不都合がある。また、ウエハの脱落を規制するためにチャック部材の押付力を大きくすると、残存円周部が破損してしまい搬送できなくなってしまうといった相反する不都合がある。
However, when a wafer having a recess as in Patent Document 1 is transported by a transport apparatus such as Patent Document 2, the inside of the recess of the wafer is depressurized by the suction pad that sucks the entire surface of the wafer, thereby There is an inconvenience of sucking the bottom and damaging the wafer.
Further, when a wafer having concave portions formed thereon is transferred by a transfer apparatus such as that disclosed in Patent Document 3, there is a disadvantage that the wafer is broken if the force for holding the wafer is strong.
Thus, it is conceivable to hold and transport a plurality of chuck members by pressing them against the inner standing surface of the recess. However, in the wafer of Patent Document 1, the inner standing surface is in a direction perpendicular to the circuit surface of the wafer. Therefore, there is nothing that regulates the dropping of the wafer on the contact surface of the chuck member, and there is a disadvantage that the wafer is easily dropped during the transfer. In addition, if the pressing force of the chuck member is increased in order to restrict the dropping of the wafer, there is a conflicting problem that the remaining circumferential portion is damaged and cannot be transferred.
[発明の目的]
本発明は、このような不都合に着目して案出されたものであり、その目的は、凹部の内側起立面にチャック部材を押し付けて保持、搬送する場合に、脱落することを防止することができる半導体ウエハを提供することにある。
[Object of invention]
The present invention has been devised by paying attention to such inconveniences, and an object of the present invention is to prevent the chuck member from falling off when being held and transported by pressing the chuck member against the inner standing surface of the recess. to provide a semiconductor upper lobe possible.
前記目的を達成するため、本発明は、外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、当該突出部は、蛇腹状に傾斜した面により複数形成される、という構成を採っている。
In order to achieve the above object, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region.
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. have a protrusion also comprising a second diameter which is reduced in diameter, the protrusion adopts a configuration in which, Ru is more formed by sloped surfaces like bellows.
また、本発明は、外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、断面視円弧状の面の谷部によって形成され、前記第2径部は、前記第1径部から連なる断面視円弧状の面隣接するとともに、前記底面に直交する面によって形成されている、という構成を採っている。
Further, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion having a circular arc shape in cross section, and the second diameter portion is defined by the first diameter portion. A configuration is adopted in which the arc-shaped surfaces that are continuous from each other are adjacent to each other and formed by a surface orthogonal to the bottom surface.
更に、本発明は、外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、Furthermore, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region.
前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、前記底面に直交する面によって形成され、前記第2径部は、前記第1径部から連なる前記底面と平行な面に隣接するとともに、前記底面に直交する面によって形成されている、という構成を採っている。The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a surface orthogonal to the bottom surface, and the second diameter portion is connected to the first diameter portion. It is configured to be formed by a surface that is adjacent to a surface parallel to the bottom surface and orthogonal to the bottom surface.
また、本発明は、外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、Further, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region,
前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、前記底面に平行な面と当該底面に対して鋭角を形成する面との谷部によって形成され、前記第2径部は、前記底面に対して鋭角を形成する面に隣接するとともに、前記底面に直交する面によって形成されている、という構成を採っている。The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a trough portion of a surface parallel to the bottom surface and a surface forming an acute angle with respect to the bottom surface, The second diameter portion is adjacent to a surface forming an acute angle with respect to the bottom surface and is formed by a surface orthogonal to the bottom surface.
また、本発明の半導体ウエハは、外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
前記凹部は、底面と、当該底面から延びる内側起立面とを含み、前記内側起立面は、その全面が粗い面により形成される、という構成を採っている。
Further, the semiconductor wafer of the present invention is a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region,
The recess includes a bottom surface and an inner upright surface extending from said bottom surface, said inner standing surface is taken the entire surface is formed by a rough surface, called configuration.
更に、本発明は、外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、前記底面に対して鈍角を形成する面と当該底面に平行な面との谷部によって形成され、前記第2径部は、前記底面に平行な面に隣接するとともに、前記底面に直交する面によって形成されている、という構成を採っている。
Furthermore, the present invention provides a semiconductor wafer in which a recess is formed by making the thickness of the outer edge side larger than the thickness of the other region.
The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion of a surface that forms an obtuse angle with respect to the bottom surface and a surface parallel to the bottom surface, The second diameter portion is adjacent to a surface parallel to the bottom surface and is formed by a surface orthogonal to the bottom surface .
本発明によれば、内側起立面に突出部が形成されているため、内側起立面にチャック部材を押し付けて保持、搬送するときに、この突出部がウエハの脱落を規制するものとして機能し、当該ウエハが搬送中に脱落するといった不都合を確実に解消することができる。また、突出部が形成されることで、チャック部材の押付力を大きくすることなく、脱落しないように安定して保持、搬送することが可能となる。   According to the present invention, since the protruding portion is formed on the inner standing surface, when the chuck member is pressed against the inner standing surface to be held and transported, the protruding portion functions as a member that regulates the dropping of the wafer, Inconveniences such as dropping of the wafer during transfer can be reliably solved. Further, by forming the protruding portion, it is possible to stably hold and transport the chuck member without falling off without increasing the pressing force of the chuck member.
更に、突出部を蛇腹状に傾斜した面により複数形成することで、ウエハの脱落を規制するものが増え、より一層ウエハを安定して保持、搬送することが可能となる。   Furthermore, by forming a plurality of protrusions with a bellows-like inclined surface, the number of wafers that are prevented from dropping off increases, and the wafer can be held and transported more stably.
また、内側起立面を粗い面とした場合、チャック部材の先端面との摩擦抵抗を高めることができ、これによっても、チャック部材を用いた搬送中での脱落を防止することが可能となる。   In addition, when the inner standing surface is a rough surface, it is possible to increase the frictional resistance with the tip surface of the chuck member, and it is also possible to prevent the falling during conveyance using the chuck member.
以下、本発明の実施の形態について図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[第1実施形態]
図1には、第1実施形態に係るウエハの概略正面断面図が示されている。この図において、ウエハWは、凹部W1が形成された開口面F1(図1中上面)と、回路が形成された回路面F3(図1中下面)と、開口面F1と回路面F3とを繋ぐ外縁としての側面F2(図1中左右の面)とから構成されている。なお、凹部W1の外周側が残存円周部W2となっており、外縁側の厚みが、それ以外の領域の厚みより相対的に大きくなっている。また、回路面F3には図示省略した表面保護シートが貼付されている。ウエハW及び凹部W1は、平面視で略円形形状に設けられ、残存円周部W2は、リング状に設けられる。凹部W1は底面W1aと、当該底面W1aの外縁から延びる内側起立面W1bとを備え、底面W1aの外縁から傾斜角度α(角度αは鋭角)で開口面F1方向に向けられた傾斜した面P1が形成されている。これにより、凹部W1は、第1径部D1と、当該第1径部D1よりも開口面F1側に位置して第1径部D1よりも縮径された第2径部D2とからなる突出部Cを有するように形成されている。
[First Embodiment]
FIG. 1 is a schematic front sectional view of a wafer according to the first embodiment. In this figure, a wafer W has an opening surface F1 (upper surface in FIG. 1) in which a recess W1 is formed, a circuit surface F3 (lower surface in FIG. 1) in which a circuit is formed, an opening surface F1 and a circuit surface F3. It is comprised from the side surface F2 (surface on either side in FIG. 1) as an outer edge to connect. In addition, the outer peripheral side of the recessed part W1 becomes the remaining circumferential part W2, and the thickness of the outer edge side is relatively larger than the thickness of the other region. Further, a surface protection sheet (not shown) is affixed to the circuit surface F3. The wafer W and the recess W1 are provided in a substantially circular shape in plan view, and the remaining circumferential portion W2 is provided in a ring shape. The concave portion W1 includes a bottom surface W1a and an inner standing surface W1b extending from the outer edge of the bottom surface W1a, and an inclined surface P1 directed from the outer edge of the bottom surface W1a toward the opening surface F1 at an inclination angle α (angle α is an acute angle). Is formed. Thereby, the recessed part W1 is a protrusion which consists of the 1st diameter part D1 and the 2nd diameter part D2 which is located in the opening surface F1 side rather than the said 1st diameter part D1, and was diameter-reduced rather than the 1st diameter part D1. A portion C is formed.
前記ウエハWを製造する場合、図2に示されるようなグラインダ20が用いられる。このグラインダ20は、モータ21と、その出力軸21Aと、この出力軸21Aに連結されて回転可能な砥石22を備えている。砥石22は、出力軸21Aと同一の軸中心位置となる円錐面22Aと、この円錐面22Aの下端に連なる底面22Bとを備え、円錐面22Aと底面22Bとのなす角度αによって、内側起立面W1bと底面W1aとの間の角度αが形成される。なお、グラインダ20は、ウエハWの上面(開口面F1)から砥石22を回転させながら所定領域内を公転することでウエハWの上面側が研削され、凹部W1が形成されるとともに、円錐面22Aによって突出部Cが形成される。また、砥石22によってウエハWの回路面に対して直交する方向に向けられた内側起立面W1bからなる凹部W1(発明が解決しようとする課題で説明したような従来形状の凹部)を形成しておき、その後、砥石22の円錐面22Aによって突出部Cを形成するようにしてもよい。更に、砥石の底面に対して直交する方向に向けられた側面を有する別の砥石を用いて、ウエハWの回路面に対して直交する方向に向けられた内側起立面W1bからなる凹部W1を形成しておき、その後、円錐面22Aを有する砥石22によって突出部Cを形成するようにしてもよい。   When manufacturing the wafer W, a grinder 20 as shown in FIG. 2 is used. The grinder 20 includes a motor 21, an output shaft 21A, and a grindstone 22 that is connected to the output shaft 21A and is rotatable. The grindstone 22 includes a conical surface 22A having the same axial center position as the output shaft 21A, and a bottom surface 22B connected to the lower end of the conical surface 22A. An angle α between W1b and the bottom surface W1a is formed. The grinder 20 revolves within a predetermined region while rotating the grindstone 22 from the upper surface (opening surface F1) of the wafer W, whereby the upper surface side of the wafer W is ground to form a recess W1 and the conical surface 22A. A protrusion C is formed. Further, a concave portion W1 (a concave portion having a conventional shape as described in the problem to be solved by the invention) is formed by the grindstone 22 and formed from the inner standing surface W1b oriented in a direction orthogonal to the circuit surface of the wafer W. Then, the protruding portion C may be formed by the conical surface 22A of the grindstone 22. Further, using another grindstone having a side surface oriented in a direction perpendicular to the bottom surface of the grindstone, a concave portion W1 formed of an inner standing surface W1b oriented in a direction orthogonal to the circuit surface of the wafer W is formed. In addition, after that, the protrusion C may be formed by the grindstone 22 having the conical surface 22A.
従って、このような第1実施形態によれば、図3に示されるように、L字状のチャック部材25の先端を内側起立面W1bに当接させて保持、搬送する場合、突出部CによってウエハWが脱落することはない。特に、チャック部材25も、前記角度αに形成される先端形状とすることで、脱落防止効果を向上させることができる。つまり、突出部CがウエハWの脱落を規制するものとして機能するとともに、チャック部材25の押付力を大きくすることなくウエハWの脱落を確実に防止することができる。   Therefore, according to the first embodiment, as shown in FIG. 3, when the tip of the L-shaped chuck member 25 is held and transported in contact with the inner standing surface W <b> 1 b, the protrusion C The wafer W does not fall off. In particular, the chuck member 25 also has a tip shape formed at the angle α, so that the drop-off preventing effect can be improved. That is, the protruding portion C functions as a member that restricts the wafer W from falling off, and the wafer W can be reliably prevented from dropping without increasing the pressing force of the chuck member 25.
次に、本発明の前記以外の実施形態について説明する。なお、以下の説明において、前
記第1実施形態と同一若しくは同等の構成部分については同一符号を用いるものとし、説
明を省略若しくは簡略にする。
Next, other embodiments of the present invention will be described. In the following description, the same reference numerals are used for the same or equivalent components as in the first embodiment, and the description is omitted or simplified.
[第2実施形態]
図4には、第2実施形態に係るウエハWの概略正面断面図が示されている。この第2実施形態の場合、内側起立面W1bは、底面W1aの外縁から当該底面W1aに直する方向に向かう面P2と、この面P2の上端からウエハWの中心方向に向かう面P2aを介して面P2と平行な面P3とが形成されている。これにより、凹部W1は、第1径部D1と、当該第1径部D1よりも開口面F1側に位置して第1径部D1よりも縮径された第2径部D2とからなる突出部Cを有するように形成されている。なお、このような突出部Cを有する内側起立面W1bを形成する場合は、円周面22Cと、この円周面22Cより突出する突出部22Dとを備えた側面形状を有する砥石22を用いて第1実施形態と同様に研削すればよい。
このような第2実施形態では、図5に示されるように、L字状のチャック部材25を第1径部D1にその先端を嵌め込ませることで、ウエハWの脱落を防止して確実に保持、搬送することができる。
[Second Embodiment]
FIG. 4 shows a schematic front cross-sectional view of a wafer W according to the second embodiment. In this second embodiment, the inner rising surface W1b, the surface P2 facing the outer edge of the bottom surface W1a in a direction Cartesian to the bottom W1a, surface it unsuitable from the upper end toward the center of the wafer W in the plane P2 P2a A plane P3 parallel to the plane P2 is formed. Thereby, the recessed part W1 is a protrusion which consists of the 1st diameter part D1 and the 2nd diameter part D2 which is located in the opening surface F1 side rather than the said 1st diameter part D1, and was diameter-reduced rather than the 1st diameter part D1. A portion C is formed. In addition, when forming inner side standing surface W1b which has such a protrusion part C, the grindstone 22 which has the side surface shape provided with the circumferential surface 22C and protrusion part 22D which protrudes from this circumferential surface 22C is used. What is necessary is just to grind similarly to 1st Embodiment.
In such a second embodiment, as shown in FIG. 5, the tip of the L-shaped chuck member 25 is fitted into the first diameter portion D1, thereby preventing the wafer W from falling off and securely holding it. Can be transported.
[第3実施形態]
図6には、第3実施形態に係るウエハWの概略正面断面図が示されている。この第3実施形態は、内側起立面W1bを粗い面P4により形成している。具体的には、粗い面P4を形成する凹凸を有する砥石を用いて研削を行っている。
このような第3実施形態によれば、内側起立面W1bに当接するチャック部材(図示省略)との摩擦抵抗を大きくすることができ、当該チャック部材による保持力を高めることが可能となる。
[Third Embodiment]
FIG. 6 is a schematic front sectional view of a wafer W according to the third embodiment. In the third embodiment, the inner rising surface W1b is formed by a rough surface P4. Specifically, grinding is performed using a grindstone having irregularities that forms the rough surface P4.
According to the third embodiment, it is possible to increase the frictional resistance with the chuck member (not shown) that abuts on the inner standing surface W1b, and it is possible to increase the holding force by the chuck member.
以上のように、本発明を実施するための最良の構成、方法等は、前記記載で開示されているが、本発明は、これに限定されるものではない。
すなわち、本発明は、主に特定の実施形態に関して特に図示、説明されているが、本発明の技術的思想及び目的の範囲から逸脱することなく、以上説明した実施形態に対し、形状、位置若しくは配置等に関し、必要に応じて当業者が様々な変更を加えることができるものである。
従って、上記に開示した形状などを限定した記載は、本発明の理解を容易にするために例示的に記載したものであり、本発明を限定するものではないから、それらの形状などの限定の一部若しくは全部の限定を外した部材の名称での記載は、本発明に含まれるものである。
As described above, the best configuration, method and the like for carrying out the present invention have been disclosed in the above description, but the present invention is not limited to this.
In other words, the present invention has been illustrated and described mainly with respect to specific embodiments, but without departing from the scope of the technical idea and object of the present invention, the shape, position, or With respect to the arrangement and the like, those skilled in the art can make various changes as necessary.
Therefore, the description limited to the shape disclosed above is an example for easy understanding of the present invention, and does not limit the present invention. The description by the name of the member which remove | excluded one part or all part is included in this invention.
例えば、第2実施形態の突出部Cは、種々の変更が可能であり、具体的には、図7〜図10に示される形態が例示できる。図7及び図8では、突出部Cは、底面W1aの外縁から傾斜角度α1(角度α1は鋭角)で開口面F1方向に向けられた傾斜した面P5によって形成されている。また、図9及び図10では、突出部Cは、断面視で蛇腹状に傾斜した面P6によって複数形成されている。蛇腹状とは、底面W1aの外縁から傾斜角度α2で開口面F1方向に向けられた傾斜した面P6aと、この面P6aの上端に連なるとともに、底面W1aに平行な仮想直線Lに対して線対称に形成された面P6bとからなる2つの面の連続体をいう。
また、図10に示されるように、チャック部材25の先端を、蛇腹状に傾斜した面P6に沿う先端形状としたり、弾性部材により形成してもよい。
For example, the protrusion C of the second embodiment can be variously modified. Specifically, the forms shown in FIGS. 7 to 10 can be exemplified. 7 and 8, the protrusion C is formed by an inclined surface P5 that is directed from the outer edge of the bottom surface W1a toward the opening F1 at an inclination angle α1 (the angle α1 is an acute angle). Moreover, in FIG.9 and FIG.10, the protrusion part C is formed in multiple numbers by the surface P6 which inclined in the shape of a bellows by sectional view. The bellows shape is line-symmetric with respect to an inclined surface P6a directed from the outer edge of the bottom surface W1a toward the opening surface F1 at an inclination angle α2 and an imaginary straight line L that is continuous with the upper end of the surface P6a and parallel to the bottom surface W1a. A continuum of two surfaces consisting of the surface P6b formed in the above.
Further, as shown in FIG. 10, the tip of the chuck member 25 may have a tip shape along a surface P6 inclined in a bellows shape, or may be formed of an elastic member.
更に、前記実施形態では、断面視で直線状の面P1〜P6を例示したが、図11(A)に示されるように、断面視で円弧状の面P7によって突出部Cを形成してもよいし、図11(B)及び図12(A)に示されるように、断面視で直線と円弧状の面P7との組み合わせによって突出部C2を形成してもよい。   Furthermore, in the said embodiment, although linear surface P1-P6 was illustrated by sectional view, as shown to FIG. 11 (A), even if it forms the protrusion part C by the arc-shaped surface P7 by sectional view. Alternatively, as shown in FIGS. 11B and 12A, the protrusion C2 may be formed by a combination of a straight line and an arcuate surface P7 in a cross-sectional view.
また、第1実施形態では、傾斜した面P1の角度αを鋭角傾斜として突出部Cを形成したが、図12(B)に示されるように、角度α3を鈍角傾斜として突出部Cを形成してもよい。   In the first embodiment, the protrusion C is formed with the angle α of the inclined surface P1 as an acute inclination. However, as shown in FIG. 12B, the protrusion C is formed with the angle α3 as an obtuse inclination. May be.
更に、凹部W1を形成する砥石22においては、第1、第2径部D1、D2に対応した側面形状を備えた単一の砥石以外に、複数の砥石によって第1、第2径部D1、D2を形成してもよい。つまり、ウエハWを荒仕上げ用、精密仕上げ用といった砥石を用いて段階的に研削する工程において、内側起立面W1bのみを研削する砥石を用いて突出部Cを形成するようにしてもよい。   Furthermore, in the grindstone 22 that forms the concave portion W1, in addition to a single grindstone having a side shape corresponding to the first and second diameter portions D1, D2, the first and second diameter portions D1, D2 may be formed. That is, in the step of grinding the wafer W in stages using a grinding stone for rough finishing or precision finishing, the protruding portion C may be formed using a grinding stone for grinding only the inner standing surface W1b.
また、第1、第2径部D1、D2に対応していない側面形状を備えた砥石であっても、公転動作や、上下動作を所定制御することで第1、第2径部D1、D2を形成してもよい。   Moreover, even if it is a grindstone provided with the side surface shape which does not respond | correspond to 1st, 2nd diameter part D1, D2, 1st, 2nd diameter part D1, D2 is controlled by carrying out predetermined control of revolution operation and an up-down operation. May be formed.
第1実施形態に係るウエハの概略正面断面図。1 is a schematic front sectional view of a wafer according to a first embodiment. 第1実施形態に係るウエハの研削中の概略正面断面図。FIG. 3 is a schematic front sectional view of the wafer according to the first embodiment during grinding. 第1実施形態に係るウエハの搬送中の概略正面断面図。FIG. 3 is a schematic front cross-sectional view during transfer of a wafer according to the first embodiment. 第2実施形態に係るウエハの研削中の概略正面断面図。The schematic front sectional drawing in the middle of grinding of the wafer concerning a 2nd embodiment. 第2実施形態に係るウエハの搬送中の概略正面断面図。FIG. 6 is a schematic front cross-sectional view during transfer of a wafer according to a second embodiment. 第3実施形態に係るウエハの研削中の概略正面断面図。The schematic front sectional drawing in the middle of grinding of the wafer concerning a 3rd embodiment. 第1変形例に係るウエハの研削中の概略正面断面図。The schematic front sectional drawing in the middle of grinding of the wafer concerning the 1st modification. 第1変形例に係るウエハの搬送中の概略正面断面図。FIG. 6 is a schematic front cross-sectional view during transfer of a wafer according to a first modification. 第2変形例に係るウエハの研削中の概略正面断面図。The schematic front sectional drawing in the middle of grinding of the wafer concerning the 2nd modification. 第2変形例に係るウエハの搬送中の概略正面断面図。FIG. 10 is a schematic front cross-sectional view during transfer of a wafer according to a second modification. (A)及び(B)は第3変形例に係るウエハの概略正面断面図。(A) And (B) is a schematic front sectional drawing of the wafer which concerns on a 3rd modification. (A)及び(B)は第3変形例に係るウエハの概略正面断面図。(A) And (B) is a schematic front sectional drawing of the wafer which concerns on a 3rd modification.
符号の説明Explanation of symbols
C 突出部
D1 第1径部
D2 第2径部
F1 開口面
F2 側面(外縁)
P1〜P8 面
W 半導体ウエハ
W1 凹部
W1a 底面
W1b 内側起立面
22 砥石
C Projection D1 First Diameter D2 Second Diameter F1 Opening Surface F2 Side (Outer Edge)
P1 to P8 surface W semiconductor wafer W1 recess W1a bottom surface W1b inner upright surface 22 grindstone

Claims (6)

  1. 外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
    前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、当該突出部は、蛇腹状に傾斜した面により複数形成されることを特徴とする半導体ウエハ。
    In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
    The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. semiconductor wafers also have a protrusion and a second diameter portion having a reduced diameter, the protrusions, characterized in Rukoto formed in plural by sloped surfaces like bellows.
  2. 外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
    前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、断面視円弧状の面の谷部によって形成され、前記第2径部は、前記第1径部から連なる断面視円弧状の面に隣接するとともに、前記底面に直交する面によって形成されていることを特徴とする半導体ウエハ。
    In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
    The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion having a circular arc shape in cross section, and the second diameter portion is defined by the first diameter portion. with adjacent cross section arcuate surface continuous from, it characterized by being formed by a plane perpendicular to the bottom surface semi conductor wafer.
  3. 外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
    前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、前記底面に直交する面によって形成され、前記第2径部は、前記第1径部から連なる前記底面と平行な面に隣接するとともに、前記底面に直交する面によって形成されていることを特徴とする半導体ウエハ。
    In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
    The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a surface orthogonal to the bottom surface, and the second diameter portion is connected to the first diameter portion. with adjacent bottom surface parallel, semi-conductor wafer characterized by being formed by a plane perpendicular to the bottom surface.
  4. 外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
    前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、前記底面に平行な面と当該底面に対して鋭角を形成する面との谷部によって形成され、前記第2径部は、前記底面に対して鋭角を形成する面に隣接するとともに、前記底面に直交する面によって形成されていることを特徴とする半導体ウエハ。
    In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
    The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a trough portion of a surface parallel to the bottom surface and a surface forming an acute angle with respect to the bottom surface, the second diameter portion, together with adjacent surfaces forming an acute angle with said bottom surface, semi-conductor wafer you characterized by being formed by a plane perpendicular to the bottom surface.
  5. 外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
    前記凹部は、底面と、当該底面から延びる内側起立面とを含み、前記内側起立面は、その全面が粗い面により形成されていることを特徴とする半導体ウエハ。
    In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
    The recess includes a bottom surface and an inner upright surface extending from said bottom surface, said inner standing surface is a semiconductor wafer, characterized in that its entire surface is formed by a rough surface.
  6. 外縁側の厚みをそれ以外の領域の厚みより大きくすることで凹部が形成された半導体ウエハにおいて、
    前記凹部は、底面と、当該底面から延びる内側起立面とを含み、この内側起立面は、少なくとも第1径部と、当該第1径部よりも開口面側に位置するとともに第1径部よりも縮径された第2径部とからなる突出部を有し、前記第1径部は、前記底面に対して鈍角を形成する面と当該底面に平行な面との谷部によって形成され、前記第2径部は、前記底面に平行な面に隣接するとともに、前記底面に直交する面によって形成されていることを特徴とする半導体ウエハ
    In the semiconductor wafer in which the concave portion is formed by making the thickness of the outer edge side larger than the thickness of the other region,
    The concave portion includes a bottom surface and an inner standing surface extending from the bottom surface. The inner standing surface is located at least on the first diameter portion and on the opening surface side of the first diameter portion and from the first diameter portion. The first diameter portion is formed by a valley portion of a surface that forms an obtuse angle with respect to the bottom surface and a surface parallel to the bottom surface, the second diameter portion, the semi-conductor wafer with adjacent plane parallel to the bottom surface, characterized by being formed by a plane perpendicular to the bottom surface.
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