JP5390768B2 - 高電子移動度トランジスタ(hemt) - Google Patents
高電子移動度トランジスタ(hemt) Download PDFInfo
- Publication number
- JP5390768B2 JP5390768B2 JP2007513132A JP2007513132A JP5390768B2 JP 5390768 B2 JP5390768 B2 JP 5390768B2 JP 2007513132 A JP2007513132 A JP 2007513132A JP 2007513132 A JP2007513132 A JP 2007513132A JP 5390768 B2 JP5390768 B2 JP 5390768B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- hemt
- field plate
- source electrode
- spacer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 125000006850 spacer group Chemical group 0.000 claims description 47
- 230000004888 barrier function Effects 0.000 claims description 34
- 229910002601 GaN Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 8
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 16
- 230000006911 nucleation Effects 0.000 description 13
- 238000010899 nucleation Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- -1 MgNx Inorganic materials 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 241000408659 Darpa Species 0.000 description 1
- 229910017947 MgOx Inorganic materials 0.000 description 1
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (14)
- 基板上の複数の活性半導体層と、
前記複数の活性層の2つの間のヘテロ界面における2次元電子ガス(2DEG)と、
前記2DEGと接触するソース電極およびドレイン電極と、
前記ソース電極とドレイン電極との間に、前記複数の活性層の上に形成されるガンマ形状のゲートと、
前記ゲートと前記ドレイン電極との間の前記複数の活性層の表面の少なくとも一部の上および前記ゲートの少なくとも一部の上のスペーサ層と、
前記スペーサ層を間に挟み、前記ゲートの少なくとも一部の上にあるフィールドプレートと、
前記フィールドプレートを前記ソース電極に電気的に接続するとともに、前記ゲートと前記ソース電極との間の最上面の全部よりも少ない面上にある少なくとも1つの導電性経路と、
を含むことを特徴とする高電子移動度トランジスタ(HEMT)。 - 前記フィールドプレートは、前記スペーサ層上で、前記ゲートの縁端から前記ドレイン電極の方向に距離Lf延びており、
前記スペーサ層は、前記ゲートおよび前記ソース電極の間の前記複数の活性層の表面の少なくとも一部の上にもあり、
前記少なくとも一つの導電性経路は、前記スペーサ層上において、前記フィールドプレートおよびソース電極の間に延びている一つまたは複数の導電性バスを有し、
前記スペーサ層は前記複数の活性層と前記一つまたは複数の導電性バスとの間を電気的に絶縁していることを特徴とする請求項1に記載のHEMT。 - 前記スペーサ層は前記ゲートを少なくとも部分的に覆い、前記フィールドプレートは、前記ゲートと少なくとも部分的に重なるとともに、前記スペーサ層上で前記ゲートの縁端から前記ドレイン電極の方向に距離Lfだけ延びていることを特徴とする請求項1または2に記載のHEMT。
- 前記少なくとも1つの導電性経路は、前記フィールドプレートとソース電極との間に延びるとともに、前記経路のそれぞれは前記複数の活性層の外側を延びて、前記フィールドプレートを前記ソース電極に電気的に接続していることを特徴とする請求項1から3のいずれか一つに記載のHEMT。
- 前記スペーサ層は、前記ゲートと前記ソース電極との間の、前記複数の活性層の最上部の表面上にさらに形成されることを特徴とする請求項1から4のいずれか一つに記載のHEMT。
- 前記少なくとも1つの導電性経路は、前記スペーサ層の上を前記フィールドプレートとソース電極との間に延びて、前記フィールドプレートを前記ソース電極に電気的に接続することを特徴とする請求項5に記載のHEMT。
- 前記複数の活性層は、窒化ガリウムをベースとする半導体材料で形成されていることを特徴とする請求項1から6のいずれか一つに記載のHEMT。
- 前記スペーサ層は、誘電体材料、または誘電体材料の複数の層を含むことを特徴とする請求項1から7のいずれか一つに記載のHEMT。
- 前記複数の活性層はバッファ層、およびバッファ層上に形成されたバリヤ層からなり、
前記ゲートは、前記バリヤ層の中に少なくとも部分的に埋め込まれていることを特徴とする請求項1から8のいずれか一つに記載のHEMT。 - 前記フィールドプレートは、前記HEMTにおける最高動作電界を低減することを特徴とする請求項1から9のいずれか一つに記載のHEMT。
- 前記最高動作電界における低減によって、前記HEMTの降伏電圧が増大することを特徴とする請求項10に記載のHEMT。
- 前記最高動作電界における低減によって、前記HEMTにおけるトラッピングが減少することを特徴とする請求項10から11のいずれか一つに記載のHEMT。
- 前記最高動作電界における低減によって、前記HEMTにおける漏洩電流が減少することを特徴とする請求項10から12のいずれか一つに記載のHEMT。
- 基板上の複数の活性半導体層と、
前記複数の活性層の2つの間のヘテロ界面における2次元電子ガス(2DEG)と、
前記2DEGと接触するソース電極およびドレイン電極と、
前記ソース電極とドレイン電極との間で、かつ前記複数の活性層の上のガンマ形状のゲートと、
前記ゲートと前記ドレイン電極の間の前記複数の活性層の表面の少なくとも一部の上および前記ゲートの少なくとも一部の上に形成されるスペーサ層と、
前記ゲートの少なくとも一部の上にあり、前記ゲートの縁端から前記ドレイン電極へ距離Lfだけ延びるフィールドプレートであって、前記ゲートおよび前記複数の活性層から絶縁されているフィールドプレートと、
前記フィールドプレートを前記ソース電極に電気的に接続する少なくとも1つの導電性経路であって、前記フィールドプレートから前記ソース電極の方向に突出する少なくとも1つの導電性経路と、
を含むことを特徴とする高電子移動度トランジスタ(HEMT)。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57051904P | 2004-05-11 | 2004-05-11 | |
US60/570,519 | 2004-05-11 | ||
US10/958,970 US7550783B2 (en) | 2004-05-11 | 2004-10-04 | Wide bandgap HEMTs with source connected field plates |
US10/958,970 | 2004-10-04 | ||
PCT/US2005/009884 WO2005114744A2 (en) | 2004-05-11 | 2005-03-24 | Wide bandgap hemts with source connected field plates |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012157890A Division JP5809608B2 (ja) | 2004-05-11 | 2012-07-13 | トランジスタ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007537593A JP2007537593A (ja) | 2007-12-20 |
JP2007537593A5 JP2007537593A5 (ja) | 2008-05-08 |
JP5390768B2 true JP5390768B2 (ja) | 2014-01-15 |
Family
ID=34964651
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007513132A Active JP5390768B2 (ja) | 2004-05-11 | 2005-03-24 | 高電子移動度トランジスタ(hemt) |
JP2012157890A Active JP5809608B2 (ja) | 2004-05-11 | 2012-07-13 | トランジスタ |
JP2015145765A Active JP6228167B2 (ja) | 2004-05-11 | 2015-07-23 | ソース接続フィールドプレートを備えるワイドバンドギャップhemt |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012157890A Active JP5809608B2 (ja) | 2004-05-11 | 2012-07-13 | トランジスタ |
JP2015145765A Active JP6228167B2 (ja) | 2004-05-11 | 2015-07-23 | ソース接続フィールドプレートを備えるワイドバンドギャップhemt |
Country Status (8)
Country | Link |
---|---|
US (3) | US7550783B2 (ja) |
EP (4) | EP2270870B1 (ja) |
JP (3) | JP5390768B2 (ja) |
KR (1) | KR101101671B1 (ja) |
CN (1) | CN100580954C (ja) |
CA (1) | CA2566756C (ja) |
TW (2) | TWI397998B (ja) |
WO (1) | WO2005114744A2 (ja) |
Families Citing this family (140)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2454269C (en) | 2001-07-24 | 2015-07-07 | Primit Parikh | Insulating gate algan/gan hemt |
KR100514379B1 (ko) * | 2002-07-23 | 2005-09-13 | 김용철 | 사과를 이용한 주류제조방법 |
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
JP4744109B2 (ja) * | 2004-07-20 | 2011-08-10 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
US20060073621A1 (en) * | 2004-10-01 | 2006-04-06 | Palo Alto Research Center Incorporated | Group III-nitride based HEMT device with insulating GaN/AlGaN buffer layer |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
US20060226442A1 (en) * | 2005-04-07 | 2006-10-12 | An-Ping Zhang | GaN-based high electron mobility transistor and method for making the same |
US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7855401B2 (en) | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7638818B2 (en) * | 2005-09-07 | 2009-12-29 | Cree, Inc. | Robust transistors with fluorine treatment |
JP5162823B2 (ja) * | 2005-12-08 | 2013-03-13 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
US7388236B2 (en) | 2006-03-29 | 2008-06-17 | Cree, Inc. | High efficiency and/or high power density wide bandgap transistors |
EP1921669B1 (en) * | 2006-11-13 | 2015-09-02 | Cree, Inc. | GaN based HEMTs with buried field plates |
US7692263B2 (en) | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
US8212290B2 (en) | 2007-03-23 | 2012-07-03 | Cree, Inc. | High temperature performance capable gallium nitride transistor |
CN101320750A (zh) * | 2007-06-06 | 2008-12-10 | 西安能讯微电子有限公司 | Hemt器件及其制造方法 |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
CN101252088B (zh) * | 2008-03-28 | 2010-04-14 | 西安电子科技大学 | 一种增强型A1GaN/GaN HEMT器件的实现方法 |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
CN101419985B (zh) * | 2008-12-01 | 2011-06-01 | 西安电子科技大学 | 绝缘栅型源场板异质结场效应晶体管 |
US7898004B2 (en) * | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US7884394B2 (en) * | 2009-02-09 | 2011-02-08 | Transphorm Inc. | III-nitride devices and circuits |
SE533700C2 (sv) * | 2009-03-24 | 2010-12-07 | Transic Ab | Bipolär transistor i kiselkarbid |
US8008977B2 (en) * | 2009-04-14 | 2011-08-30 | Triquint Semiconductor, Inc. | Field-plated transistor including feedback resistor |
US8754496B2 (en) * | 2009-04-14 | 2014-06-17 | Triquint Semiconductor, Inc. | Field effect transistor having a plurality of field plates |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8168486B2 (en) * | 2009-06-24 | 2012-05-01 | Intersil Americas Inc. | Methods for manufacturing enhancement-mode HEMTs with self-aligned field plate |
WO2010151856A2 (en) | 2009-06-26 | 2010-12-29 | Cornell University | Chemical vapor deposition process for aluminum silicon nitride |
CN102484067A (zh) | 2009-06-26 | 2012-05-30 | 康奈尔大学 | 包括铝-硅氮化物钝化的用于形成iii-v半导体结构的方法 |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
CN102013437B (zh) | 2009-09-07 | 2014-11-05 | 苏州捷芯威半导体有限公司 | 半导体器件及其制造方法 |
US7999287B2 (en) | 2009-10-26 | 2011-08-16 | Infineon Technologies Austria Ag | Lateral HEMT and method for the production of a lateral HEMT |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
WO2011100304A1 (en) | 2010-02-09 | 2011-08-18 | Massachusetts Institute Of Technology | Dual-gate normally-off nitride transistors |
EP2383786B1 (en) | 2010-04-29 | 2018-08-15 | Ampleon Netherlands B.V. | Semiconductor transistor comprising two electrically conductive shield elements |
US8829999B2 (en) | 2010-05-20 | 2014-09-09 | Cree, Inc. | Low noise amplifiers including group III nitride based high electron mobility transistors |
JP5688556B2 (ja) | 2010-05-25 | 2015-03-25 | パナソニックIpマネジメント株式会社 | 電界効果トランジスタ |
JP2011249728A (ja) * | 2010-05-31 | 2011-12-08 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP5712516B2 (ja) * | 2010-07-14 | 2015-05-07 | 住友電気工業株式会社 | 半導体装置 |
JP5649347B2 (ja) | 2010-07-20 | 2015-01-07 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
US8513703B2 (en) | 2010-10-20 | 2013-08-20 | National Semiconductor Corporation | Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same |
JP2012109492A (ja) * | 2010-11-19 | 2012-06-07 | Sanken Electric Co Ltd | 化合物半導体装置 |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
JP5866773B2 (ja) * | 2011-02-25 | 2016-02-17 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
JP5597581B2 (ja) * | 2011-03-23 | 2014-10-01 | 株式会社東芝 | 窒化物半導体装置及びその製造方法 |
SE1150386A1 (sv) | 2011-05-03 | 2012-11-04 | Fairchild Semiconductor | Bipolär transistor av kiselkarbid med förbättrad genombrottsspänning |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
JP5979836B2 (ja) * | 2011-09-09 | 2016-08-31 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
KR101616157B1 (ko) * | 2011-09-21 | 2016-04-27 | 한국전자통신연구원 | 전력 반도체 소자 및 그 제조 방법 |
US8772833B2 (en) * | 2011-09-21 | 2014-07-08 | Electronics And Telecommunications Research Institute | Power semiconductor device and fabrication method thereof |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
US8664718B2 (en) * | 2011-11-30 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power MOSFETs and methods for forming the same |
US10002957B2 (en) * | 2011-12-21 | 2018-06-19 | Power Integrations, Inc. | Shield wrap for a heterostructure field effect transistor |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
JP2013182992A (ja) * | 2012-03-01 | 2013-09-12 | Toshiba Corp | 半導体装置 |
JP2013183061A (ja) * | 2012-03-02 | 2013-09-12 | Toshiba Corp | 半導体装置 |
JP2013183060A (ja) | 2012-03-02 | 2013-09-12 | Toshiba Corp | 半導体装置 |
JP2013183062A (ja) * | 2012-03-02 | 2013-09-12 | Toshiba Corp | 半導体装置 |
JP5895666B2 (ja) * | 2012-03-30 | 2016-03-30 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9093366B2 (en) | 2012-04-09 | 2015-07-28 | Transphorm Inc. | N-polar III-nitride transistors |
US9443941B2 (en) | 2012-06-04 | 2016-09-13 | Infineon Technologies Austria Ag | Compound semiconductor transistor with self aligned gate |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US9024324B2 (en) * | 2012-09-05 | 2015-05-05 | Freescale Semiconductor, Inc. | GaN dual field plate device with single field plate metal |
JP6268366B2 (ja) * | 2012-09-28 | 2018-01-31 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
KR101946009B1 (ko) | 2012-10-11 | 2019-02-08 | 삼성전자주식회사 | 고전자이동도 트랜지스터 및 그 구동방법 |
CN105164811B (zh) | 2013-02-15 | 2018-08-31 | 创世舫电子有限公司 | 半导体器件的电极及其形成方法 |
US9343561B2 (en) | 2013-03-13 | 2016-05-17 | Cree, Inc. | Semiconductor device with self-aligned ohmic contacts |
US8969927B2 (en) | 2013-03-13 | 2015-03-03 | Cree, Inc. | Gate contact for a semiconductor device and methods of fabrication thereof |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245993B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
US9306012B2 (en) * | 2013-03-15 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company Limited | Strip-ground field plate |
US9048184B2 (en) * | 2013-03-15 | 2015-06-02 | Northrop Grumman Systems Corporation | Method of forming a gate contact |
US9082722B2 (en) * | 2013-03-25 | 2015-07-14 | Raytheon Company | Monolithic integrated circuit (MMIC) structure and method for forming such structure |
KR102065113B1 (ko) | 2013-05-01 | 2020-01-10 | 삼성전자주식회사 | 고전자이동도 트랜지스터 및 그 제조 방법 |
US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
US9407214B2 (en) | 2013-06-28 | 2016-08-02 | Cree, Inc. | MMIC power amplifier |
WO2015009514A1 (en) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Iii-nitride transistor including a p-type depleting layer |
TWI615977B (zh) * | 2013-07-30 | 2018-02-21 | 高效電源轉換公司 | 具有匹配臨界電壓之積體電路及其製造方法 |
CN103367403B (zh) * | 2013-08-01 | 2019-10-08 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
JP2015046445A (ja) * | 2013-08-27 | 2015-03-12 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
KR102100928B1 (ko) * | 2013-10-17 | 2020-05-15 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 |
US9905658B2 (en) | 2013-11-26 | 2018-02-27 | Nxp Usa, Inc. | Transistors with field plates resistant to field plate material migration and methods of their fabrication |
US9123791B2 (en) | 2014-01-09 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor device and method |
JP2015195288A (ja) * | 2014-03-31 | 2015-11-05 | 住友電工デバイス・イノベーション株式会社 | 半導体装置及び半導体装置の製造方法 |
EP3134920A4 (en) | 2014-04-25 | 2017-11-29 | HRL Laboratories, LLC | Fet transistor on a iii-v material structure with substrate transfer |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
CN104332498B (zh) * | 2014-09-01 | 2018-01-05 | 苏州捷芯威半导体有限公司 | 一种斜场板功率器件及斜场板功率器件的制备方法 |
US9640623B2 (en) | 2014-10-17 | 2017-05-02 | Cree, Inc. | Semiconductor device with improved field plate |
US9608078B2 (en) * | 2014-10-17 | 2017-03-28 | Cree, Inc. | Semiconductor device with improved field plate |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
JP6496149B2 (ja) | 2015-01-22 | 2019-04-03 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
CN106206309A (zh) * | 2015-05-07 | 2016-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | 二次外延p型氮化物实现增强型hemt的方法及增强型hemt |
CN106328523B (zh) * | 2015-06-15 | 2019-10-15 | 北大方正集团有限公司 | 射频横向双扩散mos器件的制作方法 |
US9647075B2 (en) | 2015-09-16 | 2017-05-09 | Nxp Usa, Inc. | Segmented field plate structure |
US10056478B2 (en) * | 2015-11-06 | 2018-08-21 | Taiwan Semiconductor Manufacturing Company Ltd. | High-electron-mobility transistor and manufacturing method thereof |
US20170128658A1 (en) * | 2015-11-11 | 2017-05-11 | CreatiVasc Medical Inc. | Arteriovenous access valve system with separate valve tubes |
CN108604597B (zh) | 2016-01-15 | 2021-09-17 | 创世舫电子有限公司 | 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件 |
JP6544264B2 (ja) * | 2016-02-23 | 2019-07-17 | サンケン電気株式会社 | 半導体装置 |
US10224401B2 (en) | 2016-05-31 | 2019-03-05 | Transphorm Inc. | III-nitride devices including a graded depleting layer |
DE102016123931A1 (de) | 2016-12-09 | 2018-06-14 | United Monolithic Semiconductors Gmbh | Transistor |
DE102016123934A1 (de) | 2016-12-09 | 2018-06-14 | United Monolithic Semiconductors Gmbh | Verfahren zur Herstellung eines Transistors |
CN107170804B (zh) * | 2017-03-29 | 2020-06-16 | 西安电子科技大学 | 复合源场板电流孔径异质结场效应晶体管 |
US11508821B2 (en) | 2017-05-12 | 2022-11-22 | Analog Devices, Inc. | Gallium nitride device for high frequency and high power applications |
US20190097001A1 (en) | 2017-09-25 | 2019-03-28 | Raytheon Company | Electrode structure for field effect transistor |
US10720497B2 (en) | 2017-10-24 | 2020-07-21 | Raytheon Company | Transistor having low capacitance field plate structure |
US10700188B2 (en) | 2017-11-02 | 2020-06-30 | Rohm Co., Ltd. | Group III nitride semiconductor device with first and second conductive layers |
US11355598B2 (en) | 2018-07-06 | 2022-06-07 | Analog Devices, Inc. | Field managed group III-V field effect device with epitaxial back-side field plate |
JP7127693B2 (ja) * | 2018-10-03 | 2022-08-30 | 三菱電機株式会社 | 電界効果トランジスタ |
TWI732155B (zh) * | 2018-11-19 | 2021-07-01 | 世界先進積體電路股份有限公司 | 半導體裝置及其形成方法 |
US10903350B2 (en) | 2019-02-21 | 2021-01-26 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for forming the same |
JP7227048B2 (ja) * | 2019-03-25 | 2023-02-21 | 株式会社アドバンテスト | 半導体装置 |
TWI719484B (zh) * | 2019-05-20 | 2021-02-21 | 世界先進積體電路股份有限公司 | 半導體結構 |
US11607226B2 (en) | 2019-05-21 | 2023-03-21 | DePuy Synthes Products, Inc. | Layered braided aneurysm treatment device with corrugations |
US11862691B2 (en) | 2019-11-01 | 2024-01-02 | Raytheon Company | Field effect transistor having field plate |
CN113035943A (zh) * | 2019-12-25 | 2021-06-25 | 华润微电子(重庆)有限公司 | 具有场板结构的hemt器件及其制备方法 |
US20210359118A1 (en) * | 2020-05-18 | 2021-11-18 | Cree, Inc. | Group III-Nitride High-Electron Mobility Transistors Configured with Recessed Source and/or Drain Contacts for Reduced On State Resistance and Process for Implementing the Same |
JP2021190501A (ja) * | 2020-05-27 | 2021-12-13 | ローム株式会社 | 窒化物半導体装置 |
CN111937157B (zh) * | 2020-06-30 | 2023-12-01 | 英诺赛科(珠海)科技有限公司 | 半导体装置和其制作方法 |
US20220102344A1 (en) * | 2020-09-25 | 2022-03-31 | Intel Corporation | Gallium nitride (gan) three-dimensional integrated circuit technology |
US11749726B2 (en) | 2020-10-27 | 2023-09-05 | Wolfspeed, Inc. | Field effect transistor with source-connected field plate |
US11658234B2 (en) | 2020-10-27 | 2023-05-23 | Wolfspeed, Inc. | Field effect transistor with enhanced reliability |
US11502178B2 (en) | 2020-10-27 | 2022-11-15 | Wolfspeed, Inc. | Field effect transistor with at least partially recessed field plate |
WO2022246182A1 (en) * | 2021-05-20 | 2022-11-24 | Wolfspeed, Inc. | Field effect transistor with source-connected field plate |
US11869964B2 (en) | 2021-05-20 | 2024-01-09 | Wolfspeed, Inc. | Field effect transistors with modified access regions |
US11621672B2 (en) | 2021-08-05 | 2023-04-04 | Wolfspeed, Inc. | Compensation of trapping in field effect transistors |
Family Cites Families (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US316793A (en) * | 1885-04-28 | William klose | ||
US5187552A (en) * | 1979-03-28 | 1993-02-16 | Hendrickson Thomas E | Shielded field-effect transistor devices |
US4290077A (en) * | 1979-05-30 | 1981-09-15 | Xerox Corporation | High voltage MOSFET with inter-device isolation structure |
US4947232A (en) | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
NL8103218A (nl) | 1981-07-06 | 1983-02-01 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode. |
US4551905A (en) | 1982-12-09 | 1985-11-12 | Cornell Research Foundation, Inc. | Fabrication of metal lines for semiconductor devices |
US5196359A (en) | 1988-06-30 | 1993-03-23 | Texas Instruments Incorporated | Method of forming heterostructure field effect transistor |
JPH0335536A (ja) * | 1989-06-30 | 1991-02-15 | Fujitsu Ltd | 電界効果型半導体装置 |
US5053348A (en) * | 1989-12-01 | 1991-10-01 | Hughes Aircraft Company | Fabrication of self-aligned, t-gate hemt |
US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
JP3098773B2 (ja) | 1991-03-18 | 2000-10-16 | トラスティーズ・オブ・ボストン・ユニバーシティ | 高絶縁性単結晶窒化ガリウム薄膜の作製及びドープ方法 |
US5192987A (en) | 1991-05-17 | 1993-03-09 | Apa Optics, Inc. | High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions |
US5192957A (en) * | 1991-07-01 | 1993-03-09 | Motorola, Inc. | Sequencer for a shared channel global positioning system receiver |
JPH0521793A (ja) | 1991-07-09 | 1993-01-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH0661266A (ja) * | 1992-08-06 | 1994-03-04 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
JPH06224225A (ja) | 1993-01-27 | 1994-08-12 | Fujitsu Ltd | 電界効果半導体装置 |
JPH06267991A (ja) * | 1993-03-12 | 1994-09-22 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3188346B2 (ja) * | 1993-06-10 | 2001-07-16 | ローム株式会社 | 電界効果トランジスタ |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JP2658860B2 (ja) | 1993-12-20 | 1997-09-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US6002148A (en) | 1995-06-30 | 1999-12-14 | Motorola, Inc. | Silicon carbide transistor and method |
US5569937A (en) | 1995-08-28 | 1996-10-29 | Motorola | High breakdown voltage silicon carbide transistor |
KR100267839B1 (ko) * | 1995-11-06 | 2000-10-16 | 오가와 에이지 | 질화물 반도체 장치 |
KR0167273B1 (ko) | 1995-12-02 | 1998-12-15 | 문정환 | 고전압 모스전계효과트렌지스터의 구조 및 그 제조방법 |
US6720615B2 (en) * | 1996-01-22 | 2004-04-13 | Fuji Electric Co., Ltd. | Vertical-type MIS semiconductor device |
TW360982B (en) * | 1996-01-26 | 1999-06-11 | Matsushita Electric Works Ltd | Thin film transistor of silicon-on-insulator type |
JPH09232827A (ja) * | 1996-02-21 | 1997-09-05 | Oki Electric Ind Co Ltd | 半導体装置及び送受信切り替え型アンテナスイッチ回路 |
US5652179A (en) | 1996-04-24 | 1997-07-29 | Watkins-Johnson Company | Method of fabricating sub-micron gate electrode by angle and direct evaporation |
US5710455A (en) * | 1996-07-29 | 1998-01-20 | Motorola | Lateral MOSFET with modified field plates and damage areas |
KR100571071B1 (ko) | 1996-12-04 | 2006-06-21 | 소니 가부시끼 가이샤 | 전계효과트랜지스터및그제조방법 |
JP3958404B2 (ja) | 1997-06-06 | 2007-08-15 | 三菱電機株式会社 | 横型高耐圧素子を有する半導体装置 |
JPH118256A (ja) * | 1997-06-13 | 1999-01-12 | Oki Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
JP3457511B2 (ja) | 1997-07-30 | 2003-10-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
US5898198A (en) | 1997-08-04 | 1999-04-27 | Spectrian | RF power device having voltage controlled linearity |
JP4219433B2 (ja) * | 1997-12-04 | 2009-02-04 | ユーディナデバイス株式会社 | 半導体装置 |
US6346451B1 (en) | 1997-12-24 | 2002-02-12 | Philips Electronics North America Corporation | Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
DE19800647C1 (de) | 1998-01-09 | 1999-05-27 | Siemens Ag | SOI-Hochspannungsschalter |
JP3233207B2 (ja) * | 1998-03-20 | 2001-11-26 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
US6316793B1 (en) | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
JP3111985B2 (ja) * | 1998-06-16 | 2000-11-27 | 日本電気株式会社 | 電界効果型トランジスタ |
DE19835454A1 (de) * | 1998-08-05 | 2000-02-10 | Aventis Res & Tech Gmbh & Co | Geschütztes supraleitendes Bauteil und Verfahren zu dessen Herstellung |
JP3180776B2 (ja) | 1998-09-22 | 2001-06-25 | 日本電気株式会社 | 電界効果型トランジスタ |
US6621121B2 (en) * | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
JP2000164926A (ja) | 1998-11-24 | 2000-06-16 | Sony Corp | 化合物半導体の選択エッチング方法、窒化物系化合物半導体の選択エッチング方法、半導体装置および半導体装置の製造方法 |
JP4182376B2 (ja) * | 1998-12-02 | 2008-11-19 | 富士通株式会社 | 半導体装置 |
US5973341A (en) * | 1998-12-14 | 1999-10-26 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) JFET device |
US6495409B1 (en) | 1999-01-26 | 2002-12-17 | Agere Systems Inc. | MOS transistor having aluminum nitride gate structure and method of manufacturing same |
JP3429700B2 (ja) * | 1999-03-19 | 2003-07-22 | 富士通カンタムデバイス株式会社 | 高電子移動度トランジスタ |
KR100302611B1 (ko) * | 1999-06-07 | 2001-10-29 | 김영환 | 고전압 반도체 소자 및 그 제조방법 |
US6127703A (en) | 1999-08-31 | 2000-10-03 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region |
JP3438133B2 (ja) * | 1999-09-27 | 2003-08-18 | 富士通株式会社 | 電界効果半導体装置及びその製造方法 |
JP3371871B2 (ja) * | 1999-11-16 | 2003-01-27 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2001160656A (ja) * | 1999-12-01 | 2001-06-12 | Sharp Corp | 窒化物系化合物半導体装置 |
JP4592938B2 (ja) | 1999-12-08 | 2010-12-08 | パナソニック株式会社 | 半導体装置 |
US6639255B2 (en) | 1999-12-08 | 2003-10-28 | Matsushita Electric Industrial Co., Ltd. | GaN-based HFET having a surface-leakage reducing cap layer |
US6586781B2 (en) | 2000-02-04 | 2003-07-01 | Cree Lighting Company | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
JP4186032B2 (ja) | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
TWI257179B (en) | 2000-07-17 | 2006-06-21 | Fujitsu Quantum Devices Ltd | High-speed compound semiconductor device operable at large output power with minimum leakage current |
US6624488B1 (en) | 2000-08-07 | 2003-09-23 | Advanced Micro Devices, Inc. | Epitaxial silicon growth and usage of epitaxial gate insulator for low power, high performance devices |
US6690042B2 (en) | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
US6891235B1 (en) * | 2000-11-15 | 2005-05-10 | International Business Machines Corporation | FET with T-shaped gate |
US6548333B2 (en) | 2000-12-01 | 2003-04-15 | Cree, Inc. | Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
JP2001230263A (ja) | 2001-01-29 | 2001-08-24 | Nec Corp | 電界効果型トランジスタ |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6468878B1 (en) | 2001-02-27 | 2002-10-22 | Koninklijke Philips Electronics N.V. | SOI LDMOS structure with improved switching characteristics |
JP2002270830A (ja) * | 2001-03-12 | 2002-09-20 | Fuji Electric Co Ltd | 半導体装置 |
US6617652B2 (en) * | 2001-03-22 | 2003-09-09 | Matsushita Electric Industrial Co., Ltd. | High breakdown voltage semiconductor device |
GB0107408D0 (en) | 2001-03-23 | 2001-05-16 | Koninkl Philips Electronics Nv | Field effect transistor structure and method of manufacture |
JP4220683B2 (ja) * | 2001-03-27 | 2009-02-04 | パナソニック株式会社 | 半導体装置 |
US6849882B2 (en) | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
JP4972842B2 (ja) * | 2001-05-11 | 2012-07-11 | 富士電機株式会社 | 半導体装置 |
US6475857B1 (en) | 2001-06-21 | 2002-11-05 | Samsung Electronics Co., Ltd. | Method of making a scalable two transistor memory device |
CA2454269C (en) | 2001-07-24 | 2015-07-07 | Primit Parikh | Insulating gate algan/gan hemt |
GB0122122D0 (en) | 2001-09-13 | 2001-10-31 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and their manufacture |
JP2003174039A (ja) * | 2001-09-27 | 2003-06-20 | Murata Mfg Co Ltd | ヘテロ接合電界効果トランジスタ |
US6906350B2 (en) * | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
WO2003038905A2 (en) | 2001-11-01 | 2003-05-08 | Koninklijke Philips Electronics N.V. | Lateral soi field-effect transistor |
KR100445904B1 (ko) | 2001-12-12 | 2004-08-25 | 한국전자통신연구원 | 소스 필드 플레이트를 갖는 드레인 확장형 모스 전계 효과트랜지스터 및그 제조방법 |
KR100438895B1 (ko) | 2001-12-28 | 2004-07-02 | 한국전자통신연구원 | 고전자 이동도 트랜지스터 전력 소자 및 그 제조 방법 |
JP2003203930A (ja) * | 2002-01-08 | 2003-07-18 | Nec Compound Semiconductor Devices Ltd | ショットキーゲート電界効果型トランジスタ |
JP2003203923A (ja) | 2002-01-10 | 2003-07-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
GB0202437D0 (en) | 2002-02-02 | 2002-03-20 | Koninkl Philips Electronics Nv | Cellular mosfet devices and their manufacture |
DE10206739C1 (de) | 2002-02-18 | 2003-08-21 | Infineon Technologies Ag | Transistorbauelement |
JP3908572B2 (ja) | 2002-03-18 | 2007-04-25 | 株式会社東芝 | 半導体素子 |
JP3705431B2 (ja) | 2002-03-28 | 2005-10-12 | ユーディナデバイス株式会社 | 半導体装置及びその製造方法 |
JP3723780B2 (ja) * | 2002-03-29 | 2005-12-07 | ユーディナデバイス株式会社 | 半導体装置及びその製造方法 |
US6559513B1 (en) | 2002-04-22 | 2003-05-06 | M/A-Com, Inc. | Field-plate MESFET |
WO2003103036A1 (en) * | 2002-05-31 | 2003-12-11 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor device and method of manufacturing |
US6740535B2 (en) * | 2002-07-29 | 2004-05-25 | International Business Machines Corporation | Enhanced T-gate structure for modulation doped field effect transistors |
US6884704B2 (en) * | 2002-08-05 | 2005-04-26 | Hrl Laboratories, Llc | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
US20040021152A1 (en) * | 2002-08-05 | 2004-02-05 | Chanh Nguyen | Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate |
US6838325B2 (en) * | 2002-10-24 | 2005-01-04 | Raytheon Company | Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor |
US8089097B2 (en) * | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
US6933544B2 (en) | 2003-01-29 | 2005-08-23 | Kabushiki Kaisha Toshiba | Power semiconductor device |
JP4568118B2 (ja) | 2003-01-29 | 2010-10-27 | 株式会社東芝 | パワー半導体素子 |
JP3940699B2 (ja) | 2003-05-16 | 2007-07-04 | 株式会社東芝 | 電力用半導体素子 |
EP2592655B1 (en) * | 2003-09-09 | 2019-11-06 | The Regents of The University of California | Fabrication of single or multiple gate field plates |
US7126426B2 (en) * | 2003-09-09 | 2006-10-24 | Cree, Inc. | Cascode amplifier structures including wide bandgap field effect transistor with field plates |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
JP4417677B2 (ja) | 2003-09-19 | 2010-02-17 | 株式会社東芝 | 電力用半導体装置 |
US7488992B2 (en) * | 2003-12-04 | 2009-02-10 | Lockheed Martin Corporation | Electronic device comprising enhancement mode pHEMT devices, depletion mode pHEMT devices, and power pHEMT devices on a single substrate and method of creation |
US7071498B2 (en) * | 2003-12-17 | 2006-07-04 | Nitronex Corporation | Gallium nitride material devices including an electrode-defining layer and methods of forming the same |
JP4041075B2 (ja) * | 2004-02-27 | 2008-01-30 | 株式会社東芝 | 半導体装置 |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7573078B2 (en) | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
JP2006032552A (ja) | 2004-07-14 | 2006-02-02 | Toshiba Corp | 窒化物含有半導体装置 |
US7229903B2 (en) * | 2004-08-25 | 2007-06-12 | Freescale Semiconductor, Inc. | Recessed semiconductor device |
US7312481B2 (en) | 2004-10-01 | 2007-12-25 | Texas Instruments Incorporated | Reliable high-voltage junction field effect transistor and method of manufacture therefor |
JP2006114652A (ja) * | 2004-10-14 | 2006-04-27 | Hitachi Cable Ltd | 半導体エピタキシャルウェハ及び電界効果トランジスタ |
US7506015B1 (en) | 2004-11-05 | 2009-03-17 | Xilinx, Inc. | Generation of a remainder from division of a first polynomial by a second polynomial |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
US7465967B2 (en) * | 2005-03-15 | 2008-12-16 | Cree, Inc. | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions |
JP4968068B2 (ja) * | 2005-06-10 | 2012-07-04 | 日本電気株式会社 | 電界効果トランジスタ |
WO2006132418A1 (ja) * | 2005-06-10 | 2006-12-14 | Nec Corporation | 電界効果トランジスタ |
ES2837454T3 (es) * | 2006-10-04 | 2021-06-30 | Leonardo Spa | Dispositivo de potencia para transistor pseudomórfico de alta movilidad de electrones (PHEMT) de suministro de voltaje único y proceso para fabricar el mismo |
-
2004
- 2004-10-04 US US10/958,970 patent/US7550783B2/en active Active
-
2005
- 2005-03-24 EP EP10183441.4A patent/EP2270870B1/en active Active
- 2005-03-24 EP EP18192908.4A patent/EP3432362A1/en active Pending
- 2005-03-24 WO PCT/US2005/009884 patent/WO2005114744A2/en active Search and Examination
- 2005-03-24 EP EP05731252.2A patent/EP1751803B1/en active Active
- 2005-03-24 CN CN200580015278A patent/CN100580954C/zh active Active
- 2005-03-24 JP JP2007513132A patent/JP5390768B2/ja active Active
- 2005-03-24 EP EP10183607.0A patent/EP2270871B1/en active Active
- 2005-03-24 CA CA2566756A patent/CA2566756C/en active Active
- 2005-03-24 KR KR1020067026090A patent/KR101101671B1/ko active IP Right Grant
- 2005-04-12 TW TW094111532A patent/TWI397998B/zh active
- 2005-04-12 TW TW101124701A patent/TWI485785B/zh active
-
2009
- 2009-05-07 US US12/437,505 patent/US7915644B2/en active Active
-
2011
- 2011-03-25 US US13/072,449 patent/US8592867B2/en active Active
-
2012
- 2012-07-13 JP JP2012157890A patent/JP5809608B2/ja active Active
-
2015
- 2015-07-23 JP JP2015145765A patent/JP6228167B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CA2566756C (en) | 2015-05-19 |
EP2270871B1 (en) | 2023-01-11 |
JP5809608B2 (ja) | 2015-11-11 |
WO2005114744A2 (en) | 2005-12-01 |
WO2005114744A3 (en) | 2006-04-13 |
CN1954440A (zh) | 2007-04-25 |
EP1751803B1 (en) | 2019-01-09 |
EP3432362A1 (en) | 2019-01-23 |
JP6228167B2 (ja) | 2017-11-08 |
EP2270870B1 (en) | 2021-08-04 |
TWI485785B (zh) | 2015-05-21 |
KR20070012852A (ko) | 2007-01-29 |
TWI397998B (zh) | 2013-06-01 |
US8592867B2 (en) | 2013-11-26 |
KR101101671B1 (ko) | 2011-12-30 |
TW201243964A (en) | 2012-11-01 |
JP2007537593A (ja) | 2007-12-20 |
US20110169054A1 (en) | 2011-07-14 |
EP1751803A2 (en) | 2007-02-14 |
CN100580954C (zh) | 2010-01-13 |
EP2270871A1 (en) | 2011-01-05 |
US20060006415A1 (en) | 2006-01-12 |
CA2566756A1 (en) | 2005-12-01 |
EP2270870A1 (en) | 2011-01-05 |
US7915644B2 (en) | 2011-03-29 |
US7550783B2 (en) | 2009-06-23 |
TW200618278A (en) | 2006-06-01 |
JP2012235153A (ja) | 2012-11-29 |
JP2015228508A (ja) | 2015-12-17 |
US20090236635A1 (en) | 2009-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6228167B2 (ja) | ソース接続フィールドプレートを備えるワイドバンドギャップhemt | |
JP5105160B2 (ja) | トランジスタ | |
JP5755671B2 (ja) | 複数のフィールドプレートを有するワイドバンドギャップトランジスタ | |
JP5519930B2 (ja) | ゲート−ソースフィールドプレートを含むワイドバンドギャップトランジスタ | |
JP2014209647A (ja) | フィールドプレートに接続されたソース領域を有する、ワイドバンドギャップ電界効果トランジスタ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080324 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080324 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100928 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101012 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110907 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110913 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111212 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120113 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120713 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120723 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120810 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120810 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120829 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121220 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121226 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130125 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130130 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130225 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130819 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131011 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5390768 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |