JP5383823B2 - ナノ構造デバイス - Google Patents
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- JP5383823B2 JP5383823B2 JP2011542074A JP2011542074A JP5383823B2 JP 5383823 B2 JP5383823 B2 JP 5383823B2 JP 2011542074 A JP2011542074 A JP 2011542074A JP 2011542074 A JP2011542074 A JP 2011542074A JP 5383823 B2 JP5383823 B2 JP 5383823B2
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Description
Claims (19)
- 基板(100)から突き出した第1ナノワイヤ群(101)と第1接触手段と、を含むナノ構造デバイスであって、
前記第1ナノワイヤ群(101)に含まれるナノワイヤのそれぞれは、少なくとも一つのPN又はPIN接合(150)を有し、
前記第1接触手段は、前記第1ナノワイヤ群(101)に含まれるナノワイヤのそれぞれが有する前記PN又はPIN接合(150)の第1側面を少なくとも部分的に取り囲んで、前記第1側面へと電気的に接続し、
第2接触手段が、前記基板(100)から突き出した第2ナノワイヤ群(102)を含み、前記PN又はPIN接合(150)の第2側面への電気的な接続を提供するように設けられている、
ことを特徴とするナノ構造デバイス。 - 前記基板(100)は前記ナノワイヤに隣接するバッファ層(120)を有する、
ことを特徴とする請求項1に記載のナノ構造デバイス。 - 前記第2接触手段は、前記第2ナノワイヤ群(102)に含まれる前記ナノワイヤを少なくとも部分的に取り囲む第2接触を含む、
ことを特徴とする請求項1又は2に記載のナノ構造デバイス。 - 前記第2接触は、前記バッファ層(120)及び/又は前記基板(100)と直接的に電気的に接触し、
前記PN又はPIN接合(150)の前記第2側面への前記電気的な接続が、少なくとも部分的に前記バッファ層(120)及び/又は前記基板(100)を介して、提供される、
ことを特徴とする請求項3に記載のナノ構造デバイス。 - 前記第2接触は、前記第2ナノワイヤ群(102)に含まれる前記ナノワイヤのそれぞれの前記中心部とは電気的に分離され、それによって、
前記PN又はPIN接合(150)の前記第2側面への前記電気的な接続が、実質的に前記バッファ層(120)及び/又は前記基板(100)を介して、提供される、
ことを特徴とする請求項4に記載のナノ構造デバイス。 - 前記第1ナノワイヤ群と前記第2ナノワイヤ群に含まれるナノワイヤのそれぞれは、中心部、および前記中心部を少なくとも部分的に取り囲む外郭層を有し、それによって、
前記外郭層はPN又はPIN接合を形成する、
ことを特徴とする請求項5に記載のナノ構造デバイス。 - 前記第2接触は、前記第2ナノワイヤ群(102)に含まれる前記ナノワイヤの前記中心部(110)と電気的に接触し、
前記PN又はPIN接合(150)の前記第2側面への前記電気的な接続が、少なくとも部分的に前記中心部を介して、提供される、
ことを特徴とする請求項3又は4に記載のナノ構造デバイス。 - 前記第2接触は、前記バッファ層(120)又は前記基板(100)から電気的に絶縁され、それによって、
前記PN又はPIN接合(150)の前記第2側面への前記電気的な接続が、前記第2接触から、前記第2ナノワイヤ群の前記ナノワイヤの前記中心部を介して、前記バッファ層(120)及び/又は前記基板(100)まで、および前記PN又はPIN接合(150)の前記第2側面まで、延びる伝導経路を介して、提供される、
ことを特徴とする請求項7に記載のナノ構造デバイス。 - 前記第1ナノワイヤ群に含まれるナノワイヤのそれぞれが有する前記PN又はPIN接合(150)は、動作時に、電荷キャリアが再結合して発光するための光の活性領域を提供し、
LEDデバイスとしてのナノ構造デバイスの機能を有する、
ことを特徴とする請求項1乃至8のいずれか1項に記載のナノ構造デバイス。 - 前記第1ナノワイヤ群と前記第2ナノワイヤ群に含まれるナノワイヤのそれぞれは、同じ製造工程において同時に成長する、
ことを特徴とする請求項1又は2に記載のナノ構造デバイス。 - 前記第1接触手段は、P側面に接続され、
前記第2接触手段は、N側面に接続される、
ことを特徴とする請求項1乃至10のいずれか1項に記載のナノ構造デバイス。 - 前記ナノワイヤの中心部は、前記第2ナノワイヤ群の端部において露出されて接触される、
ことを特徴とする請求項1乃至11のいずれか1項に記載のナノ構造デバイス。 - ナノ構造デバイスを製造する方法であって、
基板(100)を用意する工程(301)と、
第1ナノワイヤ群(101)と第2ナノワイヤ群(102)を、前記基板(100)、又は前記基板(100)の上のバッファ層(120)の上に成長させる工程(302)と、
前記第1ナノワイヤ群と前記第2ナノワイヤ群に含まれる前記ナノワイヤのそれぞれにPN又はPIN接合(150)を形成する工程(303)と、
前記第1ナノワイヤ群(101)に含まれるナノワイヤのそれぞれが有する前記PN又はPIN接合(150)の第1側面を少なくとも部分的に取り囲んで、前記第1側面へと電気的に接続する第1接触を形成する工程(304)と、
前記第2ナノワイヤ群(102)に含まれる前記ナノワイヤを少なくとも部分的に取り囲む第2接触を形成し、これによって、前記第2接触が前記PN又はPIN接合(150)の第2側面への電気的な接続を形成する工程(305)と、を含む、
ことを特徴とする方法。 - 前記成長させる工程は、前記ナノワイヤを取り囲む外郭層を成長させる工程を含む、
ことを特徴とする請求項13に記載のナノ構造デバイスを製造する方法。 - 前記第2接触を形成する工程は、前記第2ナノワイヤ群の上を囲う層から前記ナノワイヤを除去する工程と、前記第2ナノワイヤ群に含まれる前記ナノワイヤを少なくとも部分的に取り囲む第2接触を形成する工程と、を含む、
ことを特徴とする請求項13又は14に記載のナノ構造デバイスを製造する方法。 - 前記第2接触は、前記バッファ層(120)及び/又は前記基板(100)と直接的に接触する、
ことを特徴とする請求項13乃至15のいずれか1項に記載のナノ構造デバイスを製造する方法。 - 前記第1ナノワイヤ群と前記第2ナノワイヤ群は、同じ製造工程において同時に形成される、
ことを特徴とする請求項13乃至16のいずれか1項に記載のナノ構造デバイスを製造する方法。 - 前記ナノワイヤの中心部は、前記第2ナノワイヤ群(102)の端部において露出される、
ことを特徴とする請求項13乃至17のいずれか1項に記載のナノ構造デバイスを製造する方法。 - 前記第1ナノワイヤ群と前記第2ナノワイヤ群に含まれる前記ナノワイヤの所定の部分は、化学的機械的研磨(CMP)及び/又はエッチングによって除去される、
ことを特徴とする請求項18に記載のナノ構造デバイスを製造する方法。
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SE0850167A SE533531C2 (sv) | 2008-12-19 | 2008-12-19 | Nanostrukturerad anordning |
SE0850167-8 | 2008-12-19 | ||
PCT/SE2009/051479 WO2010071594A1 (en) | 2008-12-19 | 2009-12-21 | A nanostructured device |
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EP (1) | EP2359416B1 (ja) |
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