JP5363977B2 - 照射アニールを用いて作製されたセミコンダクタ・オン・インシュレータ構造 - Google Patents
照射アニールを用いて作製されたセミコンダクタ・オン・インシュレータ構造 Download PDFInfo
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- JP5363977B2 JP5363977B2 JP2009513227A JP2009513227A JP5363977B2 JP 5363977 B2 JP5363977 B2 JP 5363977B2 JP 2009513227 A JP2009513227 A JP 2009513227A JP 2009513227 A JP2009513227 A JP 2009513227A JP 5363977 B2 JP5363977 B2 JP 5363977B2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
204:ドナー半導体ウェハに、イオン注入プロセスを施す
206:剥離層に、温和な酸化を施す
208:剥離層とガラスとの間に陽極接合を形成する
210:ガラス層/剥離層を、ドナー半導体ウェハから分離する
212:ドナー半導体ウェハまたは剥離層に、アニールプロセスを施す
まず、図2および3を参照すると、ドナー半導体ウェハ120の注入表面121を、例えば、研磨、クリーニング等の前処理をして、ガラスまたはガラスセラミック基板102に接合させるのに好適な比較的平坦で均一な注入表面121を作製する。注入表面121は、半導体層104の下側を形成する。説明のために、半導体ウェハ120は、実質的に単結晶Siウェハである。ただし、上述したとおり、他の好適な半導体材料を用いてもよい。
−多数のレーザビームを、同時に、連続的に、またはその他のやり方で用いて、処理される表面を露光する。
−大面積ビームを用いて、例えば、フラッド露光により処理された表面を露光する。
−リソグラフィプロセスで典型的なステップ・アンド・リピートプロセスを露光に採用する。
−直線の狭いビームを用いて、処理される表面を走査する。
−小面積ビームを用いて、表面、例えば、ベクトル走査、ラスタ走査等により走査する。
−パルス化レーザビームを用い、パルスの合計数を制御することにより、露光量を制御する。
−連続レーザビームを用い、露光時間を制御して、合計照射エネルギーを制御する。
−露光時間を、露光される表面に対するレーザビームの速度を制御する、例えば、基板が配置されるステージの移動速度を制御することにより制御する。
804:SOI構造を、レーザアニールアセンブリに移動し、配置する
806:レーザアニールを実施する
808:SOI構造をレーザアニールアセンブリから移動する
Claims (3)
- セミコンダクタ・オン・インシュレータ構造を製造する方法であって、
結晶ドナー半導体ウェハの注入表面にイオン注入プロセスを施して、ドナー半導体ウェハの剥離層を作成する工程と、
前記剥離層の前記注入表面を、絶縁基板に接合する工程と、
前記剥離層を、前記ドナー半導体ウェハから分離して、少なくとも1つの劈開面を露出する工程と、
前記少なくとも1つの劈開面を含む結晶層の少なくとも1つの未完成表面に、照射アニールプロセスを施す工程であって、まず、前記少なくとも1つの未完成表面に、第1のレーザ放射線を施し、その後、前記少なくとも1つの未完成表面に、前記第1のレーザ放射線よりも高い強度を有する第2のレーザ放射線を施す工程と
を有してなる方法。 - 前記結晶層の前記少なくとも1つの未完成表面に、照射アニールプロセスを施す前記工程の前に、前記結晶層全体を、100℃〜Tsp−100℃(式中、Tspは、前記セミコンダクタ・オン・インシュレータ構造に含有されるガラスのひずみ点、または最低融解温度での前記セミコンダクタ・オン・インシュレータ構造の成分の融点である)の高温まで加熱することを特徴とする請求項1に記載のセミコンダクタ・オン・インシュレータ構造を製造する方法。
- 接合の工程が、
前記絶縁基板および前記ドナー半導体ウェハのうち少なくとも1つを加熱し、
前記絶縁基板を、前記ドナー半導体ウェハの前記剥離層と直接または間接的に接触させ、
前記絶縁基板と前記ドナー半導体ウェハ間に電位を印加して、接合を生じさせることを特徴とする請求項1または2に記載のセミコンダクタ・オン・インシュレータ構造を製造する方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US80988106P | 2006-05-31 | 2006-05-31 | |
US60/809,881 | 2006-05-31 | ||
US11/726,290 | 2007-03-21 | ||
US11/726,290 US7579654B2 (en) | 2006-05-31 | 2007-03-21 | Semiconductor on insulator structure made using radiation annealing |
PCT/US2007/012603 WO2007142911A2 (en) | 2006-05-31 | 2007-05-24 | Semiconductor on insulator structure made using radiation annealing |
Publications (2)
Publication Number | Publication Date |
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JP2009539257A JP2009539257A (ja) | 2009-11-12 |
JP5363977B2 true JP5363977B2 (ja) | 2013-12-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009513227A Expired - Fee Related JP5363977B2 (ja) | 2006-05-31 | 2007-05-24 | 照射アニールを用いて作製されたセミコンダクタ・オン・インシュレータ構造 |
Country Status (6)
Country | Link |
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US (1) | US7579654B2 (ja) |
EP (1) | EP2022089A2 (ja) |
JP (1) | JP5363977B2 (ja) |
KR (1) | KR20090018848A (ja) |
CN (1) | CN101454875B (ja) |
WO (1) | WO2007142911A2 (ja) |
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- 2007-03-21 US US11/726,290 patent/US7579654B2/en not_active Expired - Fee Related
- 2007-05-24 CN CN2007800197094A patent/CN101454875B/zh not_active Expired - Fee Related
- 2007-05-24 WO PCT/US2007/012603 patent/WO2007142911A2/en active Application Filing
- 2007-05-24 EP EP07795413A patent/EP2022089A2/en not_active Withdrawn
- 2007-05-24 KR KR1020087032027A patent/KR20090018848A/ko not_active Application Discontinuation
- 2007-05-24 JP JP2009513227A patent/JP5363977B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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KR20090018848A (ko) | 2009-02-23 |
WO2007142911A2 (en) | 2007-12-13 |
EP2022089A2 (en) | 2009-02-11 |
US20070281172A1 (en) | 2007-12-06 |
CN101454875A (zh) | 2009-06-10 |
CN101454875B (zh) | 2011-01-19 |
WO2007142911A3 (en) | 2008-04-10 |
US7579654B2 (en) | 2009-08-25 |
JP2009539257A (ja) | 2009-11-12 |
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