JP5360756B2 - 有機電界発光表示装置及びその製造方法 - Google Patents
有機電界発光表示装置及びその製造方法 Download PDFInfo
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- JP5360756B2 JP5360756B2 JP2009033777A JP2009033777A JP5360756B2 JP 5360756 B2 JP5360756 B2 JP 5360756B2 JP 2009033777 A JP2009033777 A JP 2009033777A JP 2009033777 A JP2009033777 A JP 2009033777A JP 5360756 B2 JP5360756 B2 JP 5360756B2
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- 238000004519 manufacturing process Methods 0.000 title description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 59
- 229920005591 polysilicon Polymers 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 41
- 239000003990 capacitor Substances 0.000 claims description 37
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002210 silicon-based material Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 230000006870 function Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
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- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
以下は、各図面、及び本発明の好ましい実施例の製造プロセスによって、例示説明する。本発明の各実施例において、同じ素子には同じ符号によって説明がされる。
1016ions/cm2である。
304 第一制御エリア
305 第二制御エリア
306 感知エリア
308 コンデンサ
310 緩衝層
312 ポリシリコンアクティブ層
314 ポリシリコンアクティブ層
318 第一電極
320、361 フォトレジスト層
321、392〜N+ イオン
332、343、363、373 ソース
334、345、365 ドレイン
322、324、364 チャネル領域
340 第一誘電体層
342 ゲート
344 ゲート
346 ゲート
348 遮光金属
349 第二電極
350 低濃度ドーブソース/ドレインエリア
352 第二誘電体層
354 微結晶シリコンアクティブ層
355 光感知層
358 本質エリア
375 N+領域エリア
377 P+領域エリア
356 第三電極
362 パターン化フォトレジスト層
368 第一記憶コンデンサ
369 第二記憶コンデンサ
380 N型薄膜トランジスタ
390 P型薄膜トランジスタ
400 P型薄膜トランジスタ
410 光感知器
420 コンデンサ
454 第二導電層
Claims (10)
- 第一制御エリアと第二制御エリアを含む基板、
前記第一制御エリア上に位置するポリシリコンアクティブ層、
前記ポリシリコンアクティブ層内に位置する第一導電型ソース/ドレインエリア、
前記ポリシリコンアクティブ層上に位置し、第一ゲート誘電体層とする第一誘電体層、
前記ポリシリコンアクティブ層と前記第二制御エリア上にそれぞれ位置する第一ゲートと第二ゲート、
前記第一ゲートと前記第二ゲート上に位置し、第二ゲート誘電体層とする第二誘電体層、
前記第二ゲートの上に位置する微結晶シリコンアクティブ層、及び
前記微結晶シリコンアクティブ層内に位置する第二導電型ソース/ドレインエリアを含み、
前記第一ゲートと前記第一導電型ソース/ドレインエリアがスイッチ素子として機能する第一導電型薄膜トランジスタを構成し、前記第二ゲート及び前記第二導電型ソース/ドレインエリアは駆動素子として機能する第二導電型薄膜トランジスタを構成する有機電界発光表示装置。 - 前記基板は、感知エリアを更に含み、前記感知エリアは、
前記基板上に位置する遮光金属層、及び
前記遮光金属層上に位置する光感知層を含み、前記第二誘電体層が前記感知エリアに延伸し、前記遮光金属層と光感知層の間に位置する請求項1に記載の有機電界発光表示装置。 - 前記光感知層は、微結晶シリコン材料から構成される請求項2に記載の有機電界発光表示装置。
- 前記基板は、コンデンサエリアを更に含み、前記コンデンサエリアは、
前記基板上に位置する第一電極、及び
前記第一電極に位置する第二電極を含み、前記第一誘電体層が前記コンデンサエリアに延伸し、前記第一電極と前記第二電極の間に位置し、且つ、前記第一誘電体層と前記第一電極および前記第二電極が第一記憶コンデンサを構成する請求項1に記載の有機電界発光表示装置。 - 前記第二電極上に位置する第三電極を更に含み、前記第二誘電体層が前記コンデンサエリアに延伸し、前記第二電極と前記第三電極の間に位置し、且つ、前記第二誘電体層と前記第二電極及び前記第三電極が前記第二記憶コンデンサを構成する請求項4に記載の有機電界発光表示装置。
- 前記第一記憶コンデンサと前記第二記憶コンデンサは並列である請求項5に記載の有機電界発光表示装置。
- 前記第一型薄膜トランジスタは、N型薄膜トランジスタであり、前記第二型薄膜トランジスタは、P型薄膜トランジスタである請求項1に記載の有機電界発光表示装置。
- 前記基板は、外部駆動素子を更に含み、且つ前記外部駆動素子は少なくとも一つの薄膜トランジスタを含む請求項1に記載の有機電界発光表示装置。
- 請求項1に記載の有機電界発光表示装置であって、及び
前記有機電界発光表示装置に接続され、信号を前記有機電界発光表示装置に入力し、前記有機電界発光表示装置に影像を表示させる入力ユニットを含む電子装置。 - 前記電子装置は、携帯電話、デジタルカメラ、パーソナルデジタルアシスタント、ノート型コンピューター、デスクトップコンピューター、テレビジョン、グローバルポジショニングシステム、カーディスプレー、航空用ディスプレー、デジタルフォトフレーム、携帯式DVDプレーヤーである請求項9に記載の電子装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097105862A TWI371223B (en) | 2008-02-20 | 2008-02-20 | Organic light emitting display device and fabrications thereof and electronic device |
TW097105862 | 2008-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009199080A JP2009199080A (ja) | 2009-09-03 |
JP5360756B2 true JP5360756B2 (ja) | 2013-12-04 |
Family
ID=40954469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009033777A Active JP5360756B2 (ja) | 2008-02-20 | 2009-02-17 | 有機電界発光表示装置及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8299471B2 (ja) |
JP (1) | JP5360756B2 (ja) |
TW (1) | TWI371223B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101656233B (zh) * | 2008-08-22 | 2012-10-24 | 群康科技(深圳)有限公司 | 薄膜晶体管基板的制造方法 |
JP5512800B2 (ja) * | 2010-04-16 | 2014-06-04 | シャープ株式会社 | 半導体装置 |
JP5853614B2 (ja) * | 2011-11-10 | 2016-02-09 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
CN103295962A (zh) * | 2013-05-29 | 2013-09-11 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法,显示装置 |
KR102235597B1 (ko) | 2014-02-19 | 2021-04-05 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
KR102238994B1 (ko) * | 2014-07-17 | 2021-04-12 | 엘지디스플레이 주식회사 | 표시장치 |
CN104538429B (zh) * | 2014-12-26 | 2019-07-02 | 深圳市华星光电技术有限公司 | Amoled背板的制作方法及其结构 |
Family Cites Families (18)
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US6351010B1 (en) * | 1998-09-22 | 2002-02-26 | Sony Corporation | Electrooptical device, substrate for driving electrooptical device and methods for making the same |
TW480727B (en) * | 2000-01-11 | 2002-03-21 | Semiconductor Energy Laboratro | Semiconductor display device |
JP4145495B2 (ja) * | 2000-01-11 | 2008-09-03 | 株式会社半導体エネルギー研究所 | 表示装置、コンピュータ、ビデオカメラ、デジタルカメラ、ゴーグル型ディスプレイ、ナビゲーションシステム、音響再生装置、ゲーム機器、携帯情報端末、及び画像再生装置 |
JP4116465B2 (ja) * | 2003-02-20 | 2008-07-09 | 株式会社日立製作所 | パネル型表示装置とその製造方法および製造装置 |
KR100496300B1 (ko) * | 2003-04-02 | 2005-06-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 평판표시장치 |
JP4112527B2 (ja) * | 2003-07-14 | 2008-07-02 | 株式会社半導体エネルギー研究所 | システムオンパネル型の発光装置の作製方法 |
JP2005123571A (ja) * | 2003-09-22 | 2005-05-12 | Sanyo Electric Co Ltd | トランジスタ基板、表示装置及びそれらの製造方法 |
US7915723B2 (en) * | 2004-01-29 | 2011-03-29 | Casio Computer Co., Ltd. | Transistor array, manufacturing method thereof and image processor |
GB0406107D0 (en) * | 2004-03-17 | 2004-04-21 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
JP4549889B2 (ja) * | 2004-05-24 | 2010-09-22 | 三星モバイルディスプレイ株式會社 | キャパシタ及びこれを利用する発光表示装置 |
KR101209041B1 (ko) * | 2005-11-25 | 2012-12-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101277606B1 (ko) * | 2006-03-22 | 2013-06-21 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US7397065B2 (en) * | 2006-05-02 | 2008-07-08 | Tpo Displays Corp. | Organic electroluminescent device and fabrication methods thereof |
US20070262311A1 (en) * | 2006-05-11 | 2007-11-15 | Toppoly Optoelectronics Corp. | Flat panel display and fabrication method and thereof |
KR101458899B1 (ko) * | 2007-03-28 | 2014-11-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US8354674B2 (en) * | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
US8187956B2 (en) * | 2007-12-03 | 2012-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film |
KR20090078446A (ko) * | 2008-01-15 | 2009-07-20 | 삼성전자주식회사 | 유기 발광 장치 및 그 제조방법 |
-
2008
- 2008-02-20 TW TW097105862A patent/TWI371223B/zh not_active IP Right Cessation
-
2009
- 2009-01-27 US US12/322,039 patent/US8299471B2/en active Active
- 2009-02-17 JP JP2009033777A patent/JP5360756B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TWI371223B (en) | 2012-08-21 |
US20090206737A1 (en) | 2009-08-20 |
JP2009199080A (ja) | 2009-09-03 |
US8299471B2 (en) | 2012-10-30 |
TW200937996A (en) | 2009-09-01 |
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