JP5324744B2 - 付着装置及び方法 - Google Patents

付着装置及び方法 Download PDF

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Publication number
JP5324744B2
JP5324744B2 JP2006533061A JP2006533061A JP5324744B2 JP 5324744 B2 JP5324744 B2 JP 5324744B2 JP 2006533061 A JP2006533061 A JP 2006533061A JP 2006533061 A JP2006533061 A JP 2006533061A JP 5324744 B2 JP5324744 B2 JP 5324744B2
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JP
Japan
Prior art keywords
voltage
targets
target
substrate
frequency
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Expired - Fee Related
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JP2006533061A
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English (en)
Japanese (ja)
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JP2007501333A5 (https=
JP2007501333A (ja
Inventor
パヴェル エヌ ラプテフ
ヴァレリー ヴィー フェルメッツガー
Original Assignee
オーイーエム グループ インコーポレイテッド
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Publication of JP2007501333A5 publication Critical patent/JP2007501333A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2006533061A 2003-05-23 2004-05-12 付着装置及び方法 Expired - Fee Related JP5324744B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/446,005 US7179350B2 (en) 2003-05-23 2003-05-23 Reactive sputtering of silicon nitride films by RF supported DC magnetron
US10/446,005 2003-05-23
PCT/US2004/015115 WO2004107411A2 (en) 2003-05-23 2004-05-12 Deposition apparatus and method

Publications (3)

Publication Number Publication Date
JP2007501333A JP2007501333A (ja) 2007-01-25
JP2007501333A5 JP2007501333A5 (https=) 2007-08-02
JP5324744B2 true JP5324744B2 (ja) 2013-10-23

Family

ID=33450968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006533061A Expired - Fee Related JP5324744B2 (ja) 2003-05-23 2004-05-12 付着装置及び方法

Country Status (5)

Country Link
US (1) US7179350B2 (https=)
EP (1) EP1634317A2 (https=)
JP (1) JP5324744B2 (https=)
TW (1) TW200502426A (https=)
WO (1) WO2004107411A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7758982B2 (en) * 2005-09-02 2010-07-20 Hitachi Global Storage Technologies Netherlands B.V. SiN overcoat for perpendicular magnetic recording media
US7517437B2 (en) * 2006-03-29 2009-04-14 Applied Materials, Inc. RF powered target for increasing deposition uniformity in sputtering systems
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
US20090246385A1 (en) * 2008-03-25 2009-10-01 Tegal Corporation Control of crystal orientation and stress in sputter deposited thin films
US8808513B2 (en) * 2008-03-25 2014-08-19 Oem Group, Inc Stress adjustment in reactive sputtering
US8482375B2 (en) * 2009-05-24 2013-07-09 Oem Group, Inc. Sputter deposition of cermet resistor films with low temperature coefficient of resistance
GB2473655A (en) * 2009-09-21 2011-03-23 Mantis Deposition Ltd Magnetron sputtering techiques and apparatus
WO2012095961A1 (ja) * 2011-01-12 2012-07-19 日新電機株式会社 プラズマ装置
US20170178878A1 (en) 2015-12-21 2017-06-22 IonQuest LLC Electrically and Magnetically Enhanced Ionized Physical Vapor Deposition Unbalanced Sputtering Source
US11359274B2 (en) 2015-12-21 2022-06-14 IonQuestCorp. Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source
US12217949B2 (en) 2015-12-21 2025-02-04 Ionquest Corp. Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
US11823859B2 (en) * 2016-09-09 2023-11-21 Ionquest Corp. Sputtering a layer on a substrate using a high-energy density plasma magnetron
US20210230739A1 (en) * 2020-01-27 2021-07-29 Applied Materials, Inc. Physical Vapor Deposition Apparatus And Methods With Gradient Thickness Target
CN116155231A (zh) * 2023-02-28 2023-05-23 苏州敏声新技术有限公司 一种体声波谐振器及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63230872A (ja) * 1984-05-17 1988-09-27 バリアン・アソシエイツ・インコ−ポレイテツド タ−ゲツト及び磁気的に強められたｒ．ｆ．バイアスを分離する分離制限磁場を有するマグネトロン・スパツタ装置
US4661228A (en) * 1984-05-17 1987-04-28 Varian Associates, Inc. Apparatus and method for manufacturing planarized aluminum films
JPH01116068A (ja) * 1987-10-28 1989-05-09 Hitachi Ltd バイアススパッタ装置
US4810347A (en) 1988-03-21 1989-03-07 Eaton Corporation Penning type cathode for sputter coating
JPH02225662A (ja) * 1989-02-27 1990-09-07 Tokuda Seisakusho Ltd スパッタ装置
DE4127262C1 (en) 1991-08-17 1992-06-04 Forschungsges Elektronenstrahl Sputtering equipment for coating large substrates with (non)ferromagnetic material - consisting of two sub-targets electrically isolated and cooling plates whose gap in between is that in region of pole units
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
DE19848636C2 (de) * 1998-10-22 2001-07-26 Fraunhofer Ges Forschung Verfahren zur Überwachung einer Wechselspannungs-Entladung an einer Doppelelektrode
JP2001003166A (ja) * 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
EP1235947A4 (en) 1999-10-15 2009-04-15 Advanced Energy Ind Inc METHOD AND DEVICE FOR POLARIZING SUBSTRATE IN MULTIPLE ELECTRODE SPUTTERING SYSTEMS
US6824653B2 (en) * 2003-02-21 2004-11-30 Agilent Technologies, Inc Magnetron with controlled DC power

Also Published As

Publication number Publication date
US7179350B2 (en) 2007-02-20
US20040231972A1 (en) 2004-11-25
WO2004107411A3 (en) 2005-12-29
WO2004107411A2 (en) 2004-12-09
TW200502426A (en) 2005-01-16
JP2007501333A (ja) 2007-01-25
EP1634317A2 (en) 2006-03-15

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