JP5272397B2 - Adhesive film application apparatus and adhesive film application method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device capable of sticking an adhesive film on a semiconductor wafer, even if the semiconductor wafer is surrounded by a dicing frame. <P>SOLUTION: The device 20 for sticking the adhesive film includes: a stage 22; a ramp 24; a drive section 26; and a laminate roll 28. On the stage 22, a body 10 to be treated is placed. The body 10 to be treated has: a dicing tape 12; a semiconductor wafer 14 where a plurality of bump electrodes 14a are provided on a circuit surface S1 and a back S2 is stuck to the dicing tape 12; and an annular dicing frame 16 stuck to the dicing tape 12 to surround the semiconductor wafer 14. The ramp 24 is connected to the drive section 26 via a drive shaft 26a and raises the semiconductor wafer 14. The laminate roll 28 sticks an adhesive film F onto the circuit surface S1 of the semiconductor wafer 14 while the semiconductor wafer 14 has been raised by the ramp 24. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to an adhesive film sticking apparatus and an adhesive film sticking method.

  In recent years, with the reduction in size and thickness of electronic components, circuits formed on a substrate on which electronic components are mounted have been increased in density and definition. Since it is difficult to connect such electronic components and fine electrodes by conventional soldering, rubber connectors, etc., anisotropic conductive films (ACF), insulating adhesives, etc. It has become common to use a film-like adhesive called a film (NCF: Non Conductive Film).

Therefore, conventionally, a step of preparing a semiconductor wafer provided with a pad (electrode) on one surface (front surface), and the other surface (back surface) of the semiconductor wafer is ground by a back surface grinding device (so-called back grinder), A method for manufacturing an IC chip with an adhesive comprising a step of reducing the thickness of the semiconductor wafer and a step of applying a film adhesive to the surface of the semiconductor wafer provided with a pad by a vacuum laminating method is known. (For example, refer to Patent Document 1). In the IC chip with adhesive manufactured by this method, since the adhesive is previously applied to the IC chip, it can be easily mounted on the substrate.
Japanese Patent Application Laid-Open No. 2004-311603

  By the way, in manufacturing an IC chip with an adhesive as described above, when the back surface of a semiconductor wafer is ground by a back grinder, a pad is generally provided to make the back surface of the semiconductor wafer flat. A back grind tape is applied to the surface of the semiconductor wafer, and the back surface of the semiconductor wafer is pressed against the grinding wheel in a state where pressure is evenly applied from the back grind tape side. Therefore, in order to laminate the film adhesive on the surface of the semiconductor wafer, the back grind tape must be peeled off.

  At this time, since the thickness of the semiconductor wafer is about 50 μm by the back grinder, if the back grind tape is peeled off without taking any measures, the semiconductor wafer may be broken. Although the semiconductor wafer can be vacuum-sucked from the back surface side and the back grind tape can be peeled off, subsequent handling of the semiconductor wafer becomes very difficult. Therefore, the back grind tape is usually peeled off after a dicing tape is attached to the back surface of the semiconductor wafer as a support for the semiconductor wafer.

  However, when the dicing tape is attached to the back surface of the semiconductor wafer, at the same time, an annular dicing frame is disposed on the dicing tape so as to surround the semiconductor wafer. Here, since the height of the dicing frame is about 1 mm to 1.5 mm, the height of the surface of the semiconductor wafer is lower than the height of the upper edge of the dicing frame. For this reason, it has been extremely difficult to apply a film adhesive to the surface of a semiconductor wafer due to the presence of a dicing frame.

  An object of the present invention is to provide an adhesive film sticking apparatus and an adhesive film sticking method capable of sticking an adhesive film to a semiconductor wafer even when the semiconductor wafer is surrounded by a dicing frame. .

  An adhesive film sticking apparatus according to the present invention includes a dicing tape, a semiconductor wafer provided with a plurality of protruding electrodes on one main surface and the other main surface attached to the dicing tape, and a dicing so as to surround the semiconductor wafer. A stage on which an object to be processed having an annular dicing frame attached to a tape is placed, a semiconductor wafer raising means for raising the semiconductor wafer among the objects to be treated placed on the stage, and a semiconductor wafer raising means And a sticking means for sticking an adhesive film to one main surface of the semiconductor wafer in a state in which the semiconductor wafer is raised by the above.

  In the adhesive film sticking apparatus according to the present invention, the semiconductor wafer is lifted in the direction from the dicing tape toward the semiconductor wafer by the semiconductor wafer lifting means. Therefore, the difference between the height of one main surface (surface) of the semiconductor wafer and the height of the upper edge of the dicing frame is reduced, and when the semiconductor wafer is further raised, the height of one main surface of the semiconductor wafer is increased. Is higher than the height of the upper edge of the dicing frame, the sticking of the adhesive film to one main surface of the semiconductor wafer is hardly hindered by the dicing frame. As a result, even when the semiconductor wafer is surrounded by the dicing frame, the adhesive film can be attached to the semiconductor wafer. Since the dicing tape is generally formed of a stretchable material, the dicing tape expands as the semiconductor wafer is raised by the semiconductor wafer raising means.

  Preferably, the raising means raises the semiconductor wafer so that one main surface of the semiconductor wafer is higher than the dicing frame. In this case, even when the semiconductor wafer is surrounded by the dicing frame, the adhesive film can be reliably attached to the semiconductor wafer.

  Preferably, the raising means has a lifting platform and a drive unit that lifts the lifting platform. If it does in this way, it becomes possible to raise a semiconductor wafer by raising a raising / lowering stand by a drive part, after mounting a processed object on a stage so that a semiconductor wafer may be located on a raising / lowering stand.

  Preferably, the raising means is a pedestal provided on the stage. If it does in this way, it will become possible to raise a semiconductor wafer by mounting a processed object on a stage so that a semiconductor wafer may be located in a pedestal part.

  Preferably, a heating means for heating the adhesive film is further provided. If it does in this way, affixing of the adhesive film to one main surface of a semiconductor wafer will be performed in the state where the adhesive film melted a little. As a result, even if a plurality of protruding electrodes are provided on one main surface of the semiconductor wafer, the adhesive film can be reliably attached to one main surface of the semiconductor wafer.

  Preferably, the adhesive film is attached to the semiconductor wafer by the attaching means in a vacuum. If it does in this way, it will become possible to control effectively generation of a void (gap) between a projection electrode provided in one main surface of a semiconductor wafer, and an adhesive film.

  On the other hand, the adhesive film sticking method according to the present invention includes a dicing tape, a semiconductor wafer provided with a plurality of protruding electrodes on one main surface and the other main surface attached to the dicing tape, and surrounding the semiconductor wafer. A target object preparing step for preparing a target object having an annular dicing frame affixed to the dicing tape, a semiconductor wafer rising step for lifting the semiconductor wafer of the target object, and the semiconductor wafer rising And a pasting step of pasting an adhesive film on one main surface of the semiconductor wafer.

  In the adhesive film sticking method according to the present invention, the semiconductor wafer in the object to be processed is raised in the direction from the dicing tape toward the semiconductor wafer. For this reason, the difference between the height of one main surface of the semiconductor wafer and the height of the upper edge of the dicing frame is reduced, and when the semiconductor wafer is further raised, the height of one main surface of the semiconductor wafer is equal to the height of the dicing frame. Since the height of the upper edge of the semiconductor wafer becomes higher than that of the upper edge of the semiconductor wafer, sticking of the adhesive film to one main surface of the semiconductor wafer is hardly hindered by the dicing frame. As a result, even when the semiconductor wafer is surrounded by the dicing frame, the adhesive film can be attached to the semiconductor wafer.

  Preferably, in the semiconductor wafer raising step, the semiconductor wafer is raised so that one main surface of the semiconductor wafer is higher than the dicing frame. In this case, even when the semiconductor wafer is surrounded by the dicing frame, the adhesive film can be reliably attached to the semiconductor wafer.

  Preferably, in the attaching step, the adhesive film is attached to one main surface of the semiconductor wafer while the adhesive film is heated. If it does in this way, in the pasting process, pasting of the adhesive film to one main surface of a semiconductor wafer will be performed in the state where the adhesive film melted a little. As a result, even if a plurality of protruding electrodes are provided on one main surface of the semiconductor wafer, the adhesive film can be reliably attached to one main surface of the semiconductor wafer.

  Preferably, the adhesive film is attached to the semiconductor wafer in the attaching step in a vacuum. If it does in this way, it will become possible to control effectively generation of a void (gap) between a projection electrode provided in one main surface of a semiconductor wafer, and an adhesive film.

  ADVANTAGE OF THE INVENTION According to this invention, even if it is a case where a semiconductor wafer is surrounded by the dicing frame, the adhesive film sticking apparatus and the adhesive film sticking method which can stick an adhesive film to a semiconductor wafer can be provided. .

  Preferred embodiments of the present invention will be described with reference to the drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and a duplicate description is omitted. In the description, the word “upper” is sometimes used, which corresponds to the upper direction of the drawing.

(Configuration of workpiece)
First, the configuration of the workpiece 10 will be described with reference to FIG. The object to be processed 10 includes a dicing tape 12, a semiconductor wafer 14, and a dicing frame 16.

  The dicing tape 12 has a base film (not shown) and an adhesive layer formed on the surface of the base film. This adhesive layer has a function of being cured by, for example, UV irradiation, and is formed of a stretchable material. Therefore, the dicing tape 12 usually has an adhesive force due to the adhesive layer, but when the adhesive layer is cured by UV irradiation, the adhesive force due to the adhesive layer of the dicing tape 12 decreases. The dicing tape 12 may have an adhesive layer on the surface where the adhesive force does not change.

  The semiconductor wafer 14 has a circuit surface (one main surface) S1 and a back surface (the other main surface) S2 which is a surface opposite to the circuit surface S1. A plurality of protruding electrodes 14a protruding from the circuit surface S1 are formed on the circuit surface S1. The back surface S <b> 2 is affixed to the adhesive layer of the dicing tape 12. The thickness of the semiconductor wafer 14 is, for example, about 50 μm to 550 μm.

  Here, the protruding electrode 14a is a gold bump formed by, for example, gold plating. The protruding electrode 14a may be a gold stud bump formed using a gold wire, a metal ball fixed by thermocompression using ultrasonic waves as necessary, a bump formed by plating or vapor deposition, or the like. The protruding electrode 14a does not need to be made of a single metal, and may include a plurality of metals. The protruding electrode 14a may include gold, silver, copper, nickel, indium, palladium, tin, bismuth, and the like. Further, the protruding electrode 14a may be a laminated body including a plurality of metal layers.

  The dicing frame 16 is an annular (ring-shaped) metal member, and is used as a fixing jig for the semiconductor wafer 14 when the semiconductor wafer 14 is diced. The inner diameter of the dicing frame 16 is larger than the outer shape of the semiconductor wafer 14. The dicing frame 16 is disposed on the dicing tape 12 so as to surround the semiconductor wafer 14, and its lower edge 16 a is attached to the adhesive layer of the dicing tape 12. Yes. The thickness of the dicing frame 16 is, for example, about 1 cm to 1.5 cm. Therefore, the upper edge 16b of the dicing frame 16 is located above the circuit surface S1 of the semiconductor wafer 14.

  As described above, the workpiece 10 in which the dicing tape 12, the semiconductor wafer 14, and the dicing frame 16 are integrally formed is placed on the stage 22 of the adhesive film pasting device 20, which will be described later, to the semiconductor wafer 14. The adhesive film F is subjected to a sticking process and a dicing process of the semiconductor wafer 14 (details will be described later).

(Configuration of adhesive film application device)
Then, with reference to FIG. 2, the structure of the sticking apparatus 20 of an adhesive film is demonstrated. The adhesive film sticking device 20 includes a stage 22, a lifting platform (semiconductor wafer raising means) 24, a drive unit (semiconductor wafer raising means) 26, and a laminate roll (heating means) 28 (see FIG. 9).

  The stage 22 is a pedestal for placing the object to be processed 10, and an opening 22 a is provided at the center thereof. More specifically, the workpiece 10 is placed on the stage 10 such that the dicing tape 12 side of the workpiece 10 faces the upper surface of the stage 22 and the dicing frame 16 of the workpiece 10 overlaps the stage 22 when viewed from above. 22 is placed.

  The lift 24 is a pedestal for raising and lowering the semiconductor wafer 14 and is located inside the opening 22 a of the stage 22. From the viewpoint of raising and lowering the semiconductor wafer 14, the outer shape of the lifting platform 24 is smaller than the inner diameter of the dicing frame 16 when viewed from above. However, in order to securely hold the semiconductor wafer 14, it is preferable that the outer shape of the lifting platform 24 is approximately the same as the outer shape of the semiconductor wafer 14 when viewed from above.

  The drive unit 26 is connected to the lifting platform 24 via the drive shaft 26a, and lifts the lifting platform 24 along the vertical direction. The laminating roll 28 is made of, for example, a hard resin, and is used for adhering (laminating) an adhesive film F, which will be described later, to the circuit surface S1 of the semiconductor wafer 14. Further, the temperature of the laminate roll 28 can be adjusted by a temperature adjusting mechanism (not shown).

(Adhesive film application method)
Next, a method for attaching the adhesive film F to the circuit surface S <b> 1 of the semiconductor wafer 14 using the adhesive film attaching device 20 will be described with reference to FIGS. 3 to 11.

  First, a semiconductor wafer 14 having a plurality of protruding electrodes 14a formed on the circuit surface S1 is prepared. Since the semiconductor wafer 14 at this time is not yet thinned, the thickness thereof is about 760 μm.

  Then, a back grind tape BT is attached to the circuit surface S1 of the semiconductor wafer 14 (see FIG. 3). The back grind tape BT has a base film BTa and an adhesive layer BTb formed on the surface of the base film BTa, and the adhesive layer BTb and the circuit surface S1 of the semiconductor wafer 14 are bonded to each other. .

  Thereafter, as shown in FIG. 3, the semiconductor wafer 14 is ground from the back surface S2 side by the back surface grinding device (back grinder) 30 while applying pressure to the back grind tape BT, thereby reducing the thickness of the semiconductor wafer 14. Specifically, the semiconductor wafer 14 is ground so that the thickness of the semiconductor wafer 14 is about 50 μm to 550 μm. The circuit surface S1 side of the semiconductor wafer 14 is uneven due to the presence of the plurality of protruding electrodes 14a. However, since the back grind tape BT is attached to the circuit surface S1 of the semiconductor wafer 14, the pressure is uniformly applied. As a result, the back surface S2 of the semiconductor wafer 14 can be flattened by grinding.

  Subsequently, as shown in FIG. 4, the dicing tape 12 is pasted on the back surface S <b> 2 of the semiconductor wafer 14 and the lower edge 16 a of the dicing frame 16 with the back grind tape BT stuck on the circuit surface S <b> 1 of the semiconductor wafer 14. The In this way, the semiconductor wafer 14 and the dicing frame 16 are integrated by the dicing tape 12.

  Thereafter, the back grind tape BT is peeled off from the circuit surface S1 of the semiconductor wafer 14 to obtain the object 10 to be processed. In this embodiment, since the semiconductor wafer 14 is affixed to the dicing tape 12 together with the dicing frame 16, there is no possibility that the semiconductor wafer 14 will break when the back grind tape BT is peeled off.

  Next, as shown in FIG. 5, the object to be processed 10 is placed on the stage 22 of the adhesive film pasting apparatus 20. At this time, the dicing tape 12 side of the object to be processed 10 faces the upper surface of the stage 22, and when viewed from above, the dicing frame 16 of the object to be processed 10 overlaps the stage 22, and the semiconductor wafer of the object to be processed 10. 14 overlaps the lift 24.

  Next, as shown in FIG. 6, the semiconductor wafer 14 is raised (moved in the direction from the dicing tape 12 toward the semiconductor wafer 14) by raising the elevator 24 by the drive unit 26. At this time, a portion of the dicing tape 12 that is not bonded to the semiconductor wafer 14 and the dicing frame 16 extends (see FIG. 6). It is preferable to raise the semiconductor wafer 14 so that the circuit surface S1 of the semiconductor wafer 14 is higher than the upper edge 16b of the dicing frame 16. Further, it is preferable that the dicing frame 16 is pressed against the stage 22 by a pressing member or the like so that the dicing frame 16 is not lifted together with the semiconductor wafer 14 when the lifting platform 24 is lifted.

  Subsequently, an adhesive film F having a separator Fa and an adhesive layer Fb provided on the separator Fa is prepared. Examples of the separator Fa include a PET base material whose surface has been subjected to a release treatment with silicone or the like. The adhesive layer Fb is formed, for example, by applying an adhesive composition to the separator Fa and drying it. The adhesive layer Fb is solid at room temperature, for example. The adhesive layer Fb includes a thermosetting resin. The thermosetting resin is cured by three-dimensionally crosslinking with heat.

  Examples of the thermosetting resin include epoxy resin, bismaleimide resin, triazine resin, polyimide resin, polyamide resin, cyanoacrylate resin, phenol resin, unsaturated polyester resin, melamine resin, urea resin, polyurethane resin, polyisocyanate resin, furan. Examples thereof include resins, resorcinol resins, xylene resins, benzoguanamine resins, diallyl phthalate resins, silicone resins, polyvinyl butyral resins, siloxane-modified epoxy resins, siloxane-modified polyamideimide resins, and acrylate resins. These can be used alone or as a mixture of two or more.

  The adhesive layer Fb may include a curing agent for promoting the curing reaction. The adhesive layer Fb preferably contains a latent curing agent in order to achieve both high reactivity and storage stability.

  The adhesive layer Fb may include a thermoplastic resin. The thermoplastic resin includes polyester resin, polyether resin, polyamide resin, polyamideimide resin, polyimide resin, polyarylate resin, polyvinyl butyral resin, polyurethane resin, phenoxy resin, polyacrylate resin, polybutadiene, acrylonitrile butadiene copolymer (NBR). ), Acrylonitrile butadiene rubber styrene resin (ABS), styrene butadiene copolymer (SBR), acrylic acid copolymer and the like. These can be used alone or in combination of two or more. Among these, a thermoplastic resin having a softening point in the vicinity of room temperature is preferable in order to ensure stickability to the semiconductor wafer 14, and an acrylic acid copolymer containing glycidyl methacrylate as a raw material is preferable.

  A filler (inorganic fine particles) for reducing the linear expansion coefficient may be added to the adhesive layer Fb. Such fillers may be crystalline or non-crystalline. When the linear expansion coefficient after curing of the adhesive layer Fb is small, thermal deformation is suppressed. Therefore, even after the semiconductor chip manufactured from the semiconductor wafer 14 is mounted on the wiring board, it is possible to maintain the electrical connection between the protruding electrode 14a and the wiring of the wiring board. The reliability of the semiconductor device manufactured by connecting can be improved.

  The adhesive layer Fb may include an additive such as a coupling agent. Thereby, the adhesiveness of a semiconductor chip and a wiring board can be improved.

  Conductive particles may be dispersed in the adhesive layer Fb. In this case, it is possible to reduce an adverse effect due to variations in the height of the protruding electrode 14a. Further, the connection can be maintained even when the wiring board is not easily deformed due to compression, such as a glass substrate. Further, the adhesive layer Fb can be an anisotropic conductive adhesive layer.

  The thickness of the adhesive layer Fb is preferably such that the adhesive layer Fb can sufficiently fill the space between the semiconductor chip and the wiring board. Usually, if the thickness of the adhesive layer Fb is equivalent to the sum of the height of the protruding electrode 14a and the wiring height of the wiring board, the space between the semiconductor chip and the wiring board can be sufficiently filled.

  Then, as shown in FIG. 7, the prepared adhesive film F is pasted (laminated) to the circuit surface S <b> 1 of the semiconductor wafer 14 using the laminating roll 28 while the semiconductor wafer 14 is raised. Specifically, the adhesive film F is moved along the circuit surface S1 of the semiconductor wafer 14 while the adhesive roll Fb of the adhesive film F is pressed against the circuit surface S1 of the semiconductor wafer 14 by the laminating roll 28. F is pasted.

  Here, it is preferable that the temperature of the laminating roll 28 is adjusted by a temperature adjusting mechanism (not shown) so that the adhesive film F is attached to the circuit surface S1 of the semiconductor wafer 14 while being heated. As a result, the adhesive layer Fb of the adhesive film F is slightly melted, so that the adhesive layer Fb can be sufficiently adhered to the circuit surface S1 of the semiconductor wafer 14 and the periphery of the protruding electrode 14a is sufficient without a gap. Can be embedded in. The heating temperature is such that the adhesive layer Fb is softened and does not harden. When the adhesive layer Fb includes, for example, an epoxy resin, an acrylic acid copolymer having a softening temperature of 40 ° C., and a latent curing agent for an epoxy resin having a reaction start temperature of 100 ° C., the heating temperature is, for example, 80 ° C.

  Subsequently, as shown in FIG. 8, the separator Fa is peeled and removed from the adhesive layer Fb. Thereby, the mounting of the adhesive layer Fb on the circuit surface S1 of the semiconductor wafer 14 is completed. Thereafter, although details are omitted, the semiconductor wafer 14 is diced (cut) together with the adhesive layer Fb with a dicing blade or the like, and the dicing tape 12 is irradiated with UV to peel and remove the dicing tape 12 so as to be separated into chips. A singulated semiconductor chip is obtained.

  In the present embodiment as described above, the semiconductor wafer 14 is lifted so that the circuit surface S1 of the semiconductor wafer 14 is higher than the upper edge 16b of the dicing frame 16 by raising the lifting platform 24 by the drive unit 26. I am letting. Therefore, since the height of the circuit surface S1 of the semiconductor wafer 14 is higher than the height of the upper edge 16b of the dicing frame 16, the attachment of the adhesive film F to the circuit surface S1 of the semiconductor wafer 14 is not hindered by the dicing frame 16. . That is, the pressing of the adhesive film F to the circuit surface S1 of the semiconductor wafer 14 by the laminating roll 28 and the movement of the laminating roll 28 along the circuit surface S1 of the semiconductor wafer 14 are surely performed. As a result, even when the semiconductor wafer 14 is surrounded by the dicing frame 16, the adhesive film F can be reliably attached to the circuit surface S1 of the semiconductor wafer 14.

  Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments. For example, in the above embodiment, the adhesive film pasting apparatus 20 includes the lift 24 and the drive unit 26, and the drive unit 26 raises the lift 24 to raise the semiconductor wafer 14. I can't. Specifically, as shown in FIG. 9, the adhesive film sticking device 20 may include a stage 22 and a pedestal 32.

  The pedestal 32 is a pedestal for raising the semiconductor wafer 14, and is provided on the stage 22 so as to protrude from the stage 22. From the viewpoint of raising the semiconductor wafer 14, the outer shape of the pedestal portion 32 is smaller than the inner diameter of the dicing frame 16 when viewed from above. However, in order to securely hold the semiconductor wafer 14, it is preferable that the outer shape of the pedestal portion 32 is approximately the same as the outer shape of the semiconductor wafer 14 when viewed from above.

  Even when the object to be processed 10 is placed on the adhesive film sticking apparatus 20 as described above, the semiconductor wafer 14 is raised by the pedestal portion 32 as shown in FIG. Even in the case of being surrounded, the adhesive film F can be attached to the circuit surface S1 of the semiconductor wafer 14. In this case, the height of the pedestal 32 is such that the circuit surface S1 of the semiconductor wafer 14 is higher than the upper edge 16b of the dicing frame 16 when the workpiece 10 is placed on the adhesive film attaching device 20. It is preferable that it is set (see FIG. 10). Further, it is preferable that the dicing frame 16 is pressed against the stage 22 by a pressing member or the like so that the pedestal 32 does not raise the dicing frame 16 together with the semiconductor wafer 14.

  Alternatively, the object to be processed 10 and the adhesive film attaching device 20 may be disposed in a vacuum chamber, and the adhesive film F may be attached to the circuit surface S1 of the semiconductor wafer 14 by the laminate roll 28 in a vacuum. In this way, it is possible to effectively suppress the generation of voids (voids) between the protruding electrodes 14a provided on the circuit surface S1 of the semiconductor wafer 14 and the adhesive layer Fb of the adhesive film F. .

  Moreover, in the said embodiment, although the adhesive film F was heated by adjusting the temperature of the lamination roll 28 with a temperature control mechanism, by adjusting the temperature of the raising / lowering base 24 or the base part 32 with a temperature control mechanism, The adhesive film F may be heated via the semiconductor wafer 14.

  Moreover, in the said embodiment, although the laminate roll 28 was formed with hard resin, at least the surface may be formed with the elastic body. In this case, even if the movement of the laminating roll 28 is hindered by the dicing frame 16, the surface of the laminating roll 28 is positioned below the upper edge 16 b of the dicing frame 16 due to elasticity. Therefore, even if the semiconductor wafer 14 is not lifted so that the circuit surface S1 of the semiconductor wafer 14 is higher than the upper edge 16b of the dicing frame 16, the adhesive film F is securely attached to the circuit surface S1 of the semiconductor wafer 14. Is possible.

FIG. 1 is a cross-sectional view illustrating a configuration of an object to be processed. FIG. 2 is a cross-sectional view showing an adhesive film sticking apparatus. FIG. 3 is a diagram illustrating one process of attaching an adhesive film to a semiconductor wafer. FIG. 4 is a diagram showing a step subsequent to FIG. FIG. 5 is a diagram showing a step subsequent to FIG. FIG. 6 is a diagram showing a step subsequent to FIG. FIG. 7 is a view showing a step subsequent to FIG. FIG. 8 is a diagram showing a step subsequent to FIG. FIG. 9 is a diagram illustrating a process of attaching the adhesive film to the semiconductor wafer by another adhesive film attaching apparatus. FIG. 10 is a diagram showing a step subsequent to FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... To-be-processed object, 12 ... Dicing tape, 14 ... Semiconductor wafer, 14a ... Protruding electrode, 16 ... Dicing frame, 20 ... Adhesive film sticking apparatus, 22 ... Stage, 24 ... Lifting table (semiconductor wafer raising means), 26 DESCRIPTION OF SYMBOLS ... Drive part (semiconductor wafer raising means), 28 ... Laminate roll (heating means), 32 ... Pedestal part, F ... Adhesive film, S1 ... Circuit surface (one main surface), S2 ... Back surface (the other main surface).

Claims (10)

A dicing tape, a semiconductor wafer provided with a plurality of protruding electrodes on one main surface and the other main surface attached to the dicing tape, and an annular dicing attached to the dicing tape so as to surround the semiconductor wafer A stage on which an object to be processed having a frame is placed;
A semiconductor wafer raising means for raising the semiconductor wafer out of the workpiece placed on the stage together with the dicing tape attached to the other main surface of the semiconductor wafer;
The semiconductor wafer is lifted by the semiconductor wafer raising means so that the one main surface is located above the upper edge of the dicing frame and the other main surface is located below the upper edge of the dicing frame. An adhesive film attaching apparatus comprising: an attaching means for attaching an adhesive film to the one main surface of the semiconductor wafer in the raised state.
  2. The adhesive film sticking apparatus according to claim 1, wherein the raising means raises the semiconductor wafer so that the one main surface of the semiconductor wafer is higher than the dicing frame.   The said raising means has a raising / lowering stand and the drive part which raises / lowers the said raising / lowering stand, The sticking apparatus of the adhesive film described in Claim 1 or 2 characterized by the above-mentioned.   The adhesive film sticking apparatus according to claim 1, wherein the raising means is a pedestal portion provided on the stage.   The adhesive film sticking device according to any one of claims 1 to 4, further comprising a heating unit for heating the adhesive film.   The adhesive film sticking apparatus according to claim 1, wherein the adhesive film is stuck to the semiconductor wafer by the sticking means in a vacuum. A dicing tape, a semiconductor wafer provided with a plurality of protruding electrodes on one main surface and the other main surface attached to the dicing tape, and an annular dicing attached to the dicing tape so as to surround the semiconductor wafer A target object preparing step of preparing a target object having a frame;
A semiconductor wafer raising step of raising the semiconductor wafer of the workpiece together with the dicing tape attached to the other main surface of the semiconductor wafer;
In a state where the semiconductor wafer is raised such that the one main surface is located above the upper edge of the dicing frame and the other main surface is located below the upper edge of the dicing frame. And an attaching step of attaching an adhesive film to the one main surface of the semiconductor wafer.   8. The adhesive film sticking method according to claim 7, wherein, in the semiconductor wafer raising step, the semiconductor wafer is raised such that the one main surface of the semiconductor wafer is higher than the dicing frame.   9. The adhesive film attaching method according to claim 7, wherein in the attaching step, the adhesive film is attached to the one main surface of the semiconductor wafer while the adhesive film is heated.   The method for applying an adhesive film according to any one of claims 7 to 9, wherein the adhesive film is attached to the semiconductor wafer in a vacuum in the attaching step.

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