JP5212666B2 - 芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物 - Google Patents

芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物 Download PDF

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JP5212666B2
JP5212666B2 JP2010508248A JP2010508248A JP5212666B2 JP 5212666 B2 JP5212666 B2 JP 5212666B2 JP 2010508248 A JP2010508248 A JP 2010508248A JP 2010508248 A JP2010508248 A JP 2010508248A JP 5212666 B2 JP5212666 B2 JP 5212666B2
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underlayer film
resist underlayer
resist
group
forming composition
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JPWO2009128513A1 (ja
Inventor
徳昌 藤谷
徹也 新城
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Nissan Chemical Corp
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Nissan Chemical Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F12/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing heteroatoms
    • C08F12/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F12/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F12/02—Monomers containing only one unsaturated aliphatic radical
    • C08F12/32—Monomers containing only one unsaturated aliphatic radical containing two or more rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F226/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen
    • C08F226/06—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a heterocyclic ring containing nitrogen
    • C08F226/12—N-Vinylcarbazole
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
    • C09D125/02—Homopolymers or copolymers of hydrocarbons
    • C09D125/04—Homopolymers or copolymers of styrene
    • C09D125/08—Copolymers of styrene
    • C09D125/14—Copolymers of styrene with unsaturated esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010508248A 2008-04-18 2009-04-16 芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物 Active JP5212666B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010508248A JP5212666B2 (ja) 2008-04-18 2009-04-16 芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008108755 2008-04-18
JP2008108755 2008-04-18
JP2010508248A JP5212666B2 (ja) 2008-04-18 2009-04-16 芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物
PCT/JP2009/057680 WO2009128513A1 (ja) 2008-04-18 2009-04-16 芳香族縮合環を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
JPWO2009128513A1 JPWO2009128513A1 (ja) 2011-08-04
JP5212666B2 true JP5212666B2 (ja) 2013-06-19

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Country Status (3)

Country Link
JP (1) JP5212666B2 (zh)
TW (1) TWI465854B (zh)
WO (1) WO2009128513A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10663863B2 (en) 2015-10-23 2020-05-26 Samsung Sdi Co., Ltd. Method of producing layer structure, and method of forming patterns

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101915553B1 (ko) 2011-05-20 2018-11-06 닛산 가가쿠 가부시키가이샤 아크릴아미드 구조를 포함하는 폴리머를 포함하는 리소그래피용 유기 하드마스크층 형성용 조성물
KR101599961B1 (ko) 2012-12-26 2016-03-04 제일모직 주식회사 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
JP7135554B2 (ja) * 2018-08-03 2022-09-13 Jsr株式会社 下層膜形成用組成物、自己組織化膜の下層膜及びその形成方法並びに自己組織化リソグラフィープロセス
US10780682B2 (en) * 2018-12-20 2020-09-22 Canon Kabushiki Kaisha Liquid adhesion composition, multi-layer structure and method of making said structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005015532A (ja) * 2003-06-23 2005-01-20 Jsr Corp 重合体および反射防止膜形成組成物
WO2005013601A1 (ja) * 2003-07-30 2005-02-10 Nissan Chemical Industries, Ltd. 保護されたカルボキシル基を有する化合物を含むリソグラフィー用下層膜形成組成物
JP2005250434A (ja) * 2004-02-04 2005-09-15 Shin Etsu Chem Co Ltd レジスト下層膜材料ならびにパターン形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1780600B1 (en) * 2004-07-02 2014-02-26 Nissan Chemical Industries, Ltd. Lower layer film forming composition for lithography including naphthalene ring having halogen atom

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005015532A (ja) * 2003-06-23 2005-01-20 Jsr Corp 重合体および反射防止膜形成組成物
WO2005013601A1 (ja) * 2003-07-30 2005-02-10 Nissan Chemical Industries, Ltd. 保護されたカルボキシル基を有する化合物を含むリソグラフィー用下層膜形成組成物
JP2005250434A (ja) * 2004-02-04 2005-09-15 Shin Etsu Chem Co Ltd レジスト下層膜材料ならびにパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10663863B2 (en) 2015-10-23 2020-05-26 Samsung Sdi Co., Ltd. Method of producing layer structure, and method of forming patterns

Also Published As

Publication number Publication date
TWI465854B (zh) 2014-12-21
WO2009128513A1 (ja) 2009-10-22
TW201001080A (en) 2010-01-01
JPWO2009128513A1 (ja) 2011-08-04

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