JP5207909B2 - キャリア、キャリアを被覆する方法並びに半導体ウェハの両面を同時に材料除去する加工方法 - Google Patents
キャリア、キャリアを被覆する方法並びに半導体ウェハの両面を同時に材料除去する加工方法 Download PDFInfo
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- JP5207909B2 JP5207909B2 JP2008260480A JP2008260480A JP5207909B2 JP 5207909 B2 JP5207909 B2 JP 5207909B2 JP 2008260480 A JP2008260480 A JP 2008260480A JP 2008260480 A JP2008260480 A JP 2008260480A JP 5207909 B2 JP5207909 B2 JP 5207909B2
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- 239000000463 material Substances 0.000 title claims description 104
- 239000004065 semiconductor Substances 0.000 title claims description 88
- 238000000576 coating method Methods 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 44
- 239000011248 coating agent Substances 0.000 title claims description 38
- 238000003672 processing method Methods 0.000 title claims description 5
- 235000012431 wafers Nutrition 0.000 claims description 82
- 239000004814 polyurethane Substances 0.000 claims description 28
- 238000000227 grinding Methods 0.000 claims description 26
- 238000005498 polishing Methods 0.000 claims description 25
- 238000012545 processing Methods 0.000 claims description 23
- 229920002635 polyurethane Polymers 0.000 claims description 18
- 229920001187 thermosetting polymer Polymers 0.000 claims description 15
- 239000000969 carrier Substances 0.000 claims description 14
- -1 polypropylene Polymers 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- 239000004744 fabric Substances 0.000 claims description 11
- 229910000831 Steel Inorganic materials 0.000 claims description 10
- 239000010959 steel Substances 0.000 claims description 10
- 229920003225 polyurethane elastomer Polymers 0.000 claims description 9
- 238000004382 potting Methods 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000004743 Polypropylene Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229920001155 polypropylene Polymers 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 239000004952 Polyamide Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229920002647 polyamide Polymers 0.000 claims description 7
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 239000003082 abrasive agent Substances 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 229920001774 Perfluoroether Polymers 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229920001730 Moisture cure polyurethane Polymers 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 150000007513 acids Chemical class 0.000 claims 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000000725 suspension Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 54
- 239000011162 core material Substances 0.000 description 40
- 150000002118 epoxides Chemical class 0.000 description 15
- 238000012360 testing method Methods 0.000 description 13
- 239000012876 carrier material Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229920001451 polypropylene glycol Polymers 0.000 description 5
- 239000004800 polyvinyl chloride Substances 0.000 description 5
- 229920000915 polyvinyl chloride Polymers 0.000 description 5
- 238000004073 vulcanization Methods 0.000 description 5
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 4
- 239000005068 cooling lubricant Substances 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 230000002787 reinforcement Effects 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920006260 polyaryletherketone Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000011527 polyurethane coating Substances 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- 229910001208 Crucible steel Inorganic materials 0.000 description 1
- VXHSNKMFTZVVHY-UHFFFAOYSA-N FC(F)(F)C1=CC=C2OC3=CC=CC=C3N(CCCN3CCCC3)C2=C1 Chemical compound FC(F)(F)C1=CC=C2OC3=CC=CC=C3N(CCCN3CCCC3)C2=C1 VXHSNKMFTZVVHY-UHFFFAOYSA-N 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001060 Gray iron Inorganic materials 0.000 description 1
- 229920006833 POM-C Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000013070 direct material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000009996 mechanical pre-treatment Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
Description
a) 機械的加工;
b) 化学的加工;
c) 化学機械的加工;
d) 場合による層構造体の製造。
ラッピング法は、例えばFeinwerktechnik & Messtechnik 90 (1982) 5, pp. 242-244に開示されている。
この多様なポリウレタン系は、熱硬化性又は常温硬化性キャスティング系(熱硬化性ポリウレタン)及び射出成形、押出成形などにおいて又は加硫(後架橋)のために加工される固体系(熱可塑性ポリウレタン)に分類することができる。
− 前記キャリアに、本発明による方法の実施の際に前記キャリアに作用する力に対して十分な安定性を付与する第1の剛性の材料、例えば(硬化された)(特殊)鋼からなる「コア」;
− 摩耗に耐性でかつ軟質の第2の材料からなる有利に両面の被覆、本発明の場合にこれは熱硬化性ポリウレタンエラストマーの場合が最良である;及び
− 有利に、半導体基板を収容するために前記キャリア中の開口部をライニングしかつ機械的損傷(破砕、破断)及び化学的損傷(金属汚染)を抑制する第3の材料。
供給可能な直径約470mmを有するこの種のキャリアは、相応する開口部を備え、例えば300mmの直径の1枚の半導体ウェハ(図4)を正確に収容するか、又は200mmの直径の3枚までの半導体ウェハ(図5)又は150mmの直径の5枚までの半導体ウェハ、又は125mmの直径の8枚までの半導体ウェハを装備する。相応して大きな作業ディスク寸法及び小さな半導体ウェハ寸法の場合に、前記キャリアは相応して複数の半導体ウェハを収容することができる。
− 作業層と接触しない、高い剛性の第1の材料からなる「コア」8、これは前記キャリアに機械的安定性を付与するため、作業ディスクの間での回転運動の間に、前記キャリアに作用する力に関して弾性変形なしに耐える;
− 第2の材料からなる前面被覆(9a)及び背面被覆(9b)、これは半導体ウェハの加工の間に作業ディスクと接触し、結合粒子(作業層)及び遊離粒子(研磨スラリー、半導体ウェハからの材料除去による摩耗)からなる影響に対して高い耐摩耗性を有する;及び
− 半導体ウェハと前記キャリアのコア8との間の直接的な材料接触を抑制する第3の材料からなる1つ又は複数のライニング10。
さらに、高い摩耗にさらされる箇所の被覆がより厚く構成されている場合が特に有利である。これは、第1に外側歯部の付近でのキャリアの外側領域であるが、冷却潤滑剤−供給開口部15及び半導体ウェハ用の収容開口部11でのエッジでもある。図5(F)の実施例では、冷却潤滑剤−供給開口部15のエッジにも、半導体ウェハ用の収容開口部のエッジにも強化(22)されていてかつ付加的に半導体ウェハの収容開口部のエッジに設けられている(9=10)被覆が示されている。
酸又はアルカリ溶液での処理により前記キャリアの前記コアを化学的活性化、
このように前処理された前記キャリアコア上に定着剤を適用、
前記定着剤上にポッティングによりポリウレタンプレポリマーを適用、
架橋及び加硫によりポリウレタン層にすること
を有する方法によっても解決される。
前記キャリアコアの両面被覆は、初めに前記キャリアコアの一方の側を、次いで他方の側を続けて加工することにより達成される。
特に、既に目標厚さでの両面の同時被覆が有利である。
Claims (26)
- ラッピング装置、研削装置又はポリシング装置中で半導体ウェハの加工のために1つ又は複数の半導体ウェハを収容するのに適した、高い剛性を有する第1の材料からなるコアを有し、前記コアは完全に又は部分的に作業層と接触する表面が第2の材料で被覆され、かつ半導体を収容するための少なくとも1つのカットアウト部を有するキャリアにおいて、前記第2の材料がショアAによる20〜90の硬度を有する熱硬化性ポリウレタン−エラストマーである、キャリア。
- 第1の材料は、70〜600GPaの弾性率を有する、請求項1記載のキャリア。
- 第1の材料は、100〜250GPaの弾性率を有する、請求項2記載のキャリア。
- 第1の材料は、HRC30〜HRC60のロックウェル硬さを有する、請求項1から3までのいずれか1項記載のキャリア。
- 第1の材料がHRC40〜HRC52のロックウェル硬さを有する、請求項4記載のキャリア。
- 第1の材料が鋼である、請求項1記載のキャリア。
- 第1の材料が特殊鋼である、請求項1記載のキャリア。
- 熱硬化性ポリウレタン−エラストマーは40゜ショアA〜80゜ショアAの硬度を有する、請求項1から7までのいずれか1項記載のキャリア。
- 前記キャリアのカットアウト部はそのエッジ領域で第3の材料でライニングされていて、前記の第3の材料は、ポリビニリデンフルオリド(PVDF)、ポリアミド(PA)、ポリプロピレン(PP)、ポリエチレン(PE)、ポリエチレンテレフタラート(PET)、ポリカーボネート(PC)、ポリスチレン(PS)、ポリメチルメタクリラート(PMMA)、ペルフルオロアルコキシ(PFA)及びこれらの材料の混合物からなるグループから選択される、請求項1から8までのいずれか1項記載のキャリア。
- 前記キャリアのカットアウト部はそのエッジ領域で、20〜90ショアAの硬度を有する熱硬化性ポリウレタンエラストマーでライニングされている、請求項1から8までのいずれか1項記載のキャリア。
- 前記キャリアの全体の厚さは0.3〜1.0mmであり、第1の材料からなる前記キャリアのコアの厚さは、前記キャリアの全体の厚さの30%〜98%である、請求項1から10までのいずれか1項記載のキャリア。
- 前記キャリアのコアの厚さが、前記キャリアの全体の厚さの50%〜90%である、請求項11記載のキャリア。
- 第2の材料からなる層の厚さは前記コアの両面で同じである、請求項11又は12記載のキャリア。
- 前記被覆は、前記キャリア中の開口部の複数のエッジ又は全てのエッジの領域内では、残りの領域よりも厚い、請求項11又は12記載のキャリア。
- 金属コアと少なくとも1つのカットアウト部を有し、ラッピング装置、研削装置又はポリシング装置中で半導体ウェハを加工するために半導体ウェハを収容するのに適したキャリアを被覆する方法であって、
化学的処理、電気化学的処理又はプラズマを用いた処理により前記キャリアのコアを化学的に活性化し、
このように前処理したキャリアコアに定着剤を適用し、
ポッティングにより前記定着剤にポリウレタン−プレポリマーを適用し、
架橋及び加硫してポリウレタン層にし、それにより前記キャリアの開口部又はカットアウト部の複数の又は全てのエッジの周囲が完全に又は部分的に被覆され、前面側の被覆と裏面側の被覆とが相互に接続され、
前記ポリウレタン層を目標の厚さに研削することを有する、キャリアを被覆する方法。 - ポリウレタンを前記キャリアのコアの両面に同時に適用する、請求項15記載の方法。
- ポリウレタンプレポリマーの適用を型中で真空を用いて又は加圧下で行う、請求項15又は16記載の方法。
- 前記定着剤がシランである、請求項15から17までのいずれか1項記載の方法。
- カットアウト部のエッジにライニングするための第3の材料を、高圧射出成形法により導入する、請求項15から18までのいずれか1項記載の方法。
- 化学処理による活性化は酸又はアルカリ溶液のエッチング液を用いる処理である、請求項15記載の方法。
- 前記エッチング液は、リン酸(H3PO4)、硝酸(HNO3)、硫酸(H2SO4)、フ
ッ化水素酸(HF)、塩酸(HCl)又は前記酸の混合物からなるグループから選択される、請求項20記載の方法。 - エッチングの間に、付加的に酸化剤が前記コアに影響を及ぼす、請求項20又は21記載の方法。
- それぞれの半導体ウェハを、回転装置を用いて回転される請求項1から14までのいずれか1項記載の複数のキャリアの1つのカットアウト部中に自由に動くことができるように置き、それによりサイクロイド状の軌道曲線で動き、その際、前記半導体ウェハを2つの回転する環状の作業ディスクの間で材料除去加工する、複数の半導体ウェハの両面を同時に材料除去する加工方法。
- 材料除去する加工が半導体ウェハの両面研削を含み、それぞれの作業ディスクは研磨材料を有する作業層を有する、請求項23記載の方法。
- 材料除去する加工が、研磨材を有する懸濁液を供給する半導体ウェハの両面ラッピングを有する、請求項23記載の方法。
- 材料除去する加工は、シリカゾルを有する分散液を供給する両面ポリシングを有し、その際、それぞれの作業ディスクは作業層として研磨布を有する、請求項23記載の方法。
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EP2097221A4 (en) * | 2006-11-21 | 2013-01-02 | 3M Innovative Properties Co | OVERLAPPING CARRIER AND METHOD |
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2007
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- 2008-08-28 CN CN2008102111342A patent/CN101412201B/zh active Active
- 2008-10-01 US US12/242,963 patent/US9539695B2/en active Active
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KR101275441B1 (ko) | 2013-06-14 |
KR20090039596A (ko) | 2009-04-22 |
TWI411494B (zh) | 2013-10-11 |
US20090104852A1 (en) | 2009-04-23 |
SG152121A1 (en) | 2009-05-29 |
DE102007049811B4 (de) | 2016-07-28 |
CN101412201B (zh) | 2012-04-18 |
JP2009099980A (ja) | 2009-05-07 |
TW200918236A (en) | 2009-05-01 |
CN101412201A (zh) | 2009-04-22 |
DE102007049811A1 (de) | 2009-04-23 |
US9539695B2 (en) | 2017-01-10 |
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