JP5185566B2 - Ceramic circuit board structure - Google Patents

Ceramic circuit board structure Download PDF

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JP5185566B2
JP5185566B2 JP2007135309A JP2007135309A JP5185566B2 JP 5185566 B2 JP5185566 B2 JP 5185566B2 JP 2007135309 A JP2007135309 A JP 2007135309A JP 2007135309 A JP2007135309 A JP 2007135309A JP 5185566 B2 JP5185566 B2 JP 5185566B2
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portion
metal plate
formed
ceramic substrate
circuit board
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JP2008294047A (en )
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秀孝 新長
努 和田
謙 柳川
孝史 上野
哲 佐久間
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株式会社ティラド
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本発明は、セラミック基板に銅板またはアルミニウム板をろう付け接合してなるセラミック回路基板構造に関する。 The present invention relates to a ceramic circuit board structure formed by brazing a copper plate or an aluminum plate to a ceramic substrate.

パワートランジスタモジュール基板や電源モジュール基板等の回路基板は、窒化アルミニウム焼結体等よりなるセラミック基板上の両面に銅板やアルミニウム板がろう付け固定されている。 A circuit board such as a power transistor module substrate and a power supply module board, copper or aluminum plate is brazed on the both surfaces of a ceramic substrate made of aluminum nitride sintered body and the like. このような回路基板構造は、銅板等をセラミック基板に高温でろう付け固定した後の冷却過程や、稼働中の冷熱サイクルにより、セラミックの熱膨張係数と銅板等の熱膨張係数との差に基づいて熱応力が生じ、その熱応力に基づいて銅板等の端部でセラミックに亀裂が生じる場合があることが知られている。 Such a circuit board structure, based on a copper plate cooling process or after brazed at a high temperature ceramic substrate, a thermal cycle in operation, the difference in thermal expansion coefficient between the copper plate or the like of the ceramic thermal stress is generated, it is known that there are cases where cracks in the ceramic at the end of such the copper plate on the basis of the thermal stress Te.

そこで、特許文献1に記載の「セラミック回路基板」は、熱応力に基づくセラミックの亀裂等を防止するために、ろう付けされた銅板の端部に薄肉部を設け、その薄肉部が熱応力によって容易に塑性変形して、セラミック基板を保護する提案がされている。 Therefore, "ceramic circuit board" described in Patent Document 1, in order to prevent the ceramic cracks or the like based on thermal stress and the thin portion provided at the end of the brazed copper plate, the thin portion due to thermal stress easily plastically deformed, it has been proposed to protect the ceramic substrate.

特公平5−25397号公報 Kokoku 5-25397 Patent Publication No.

従来の熱応力対策が施されたセラミック回路基板は、セラミック基板の亀裂を防止する点においては有効であるが、回路基板の稼働中に発生する熱を熱交換器に円滑に伝達し難い問題点があった。 Ceramic circuit board conventional thermal stress measures were subjected are effective in preventing the ceramic substrate cracks, smoothly transmitted difficult problems in the heat exchanger the heat generated during circuit board production was there. 即ち、セラミック基板側に薄肉部を設け、その平面を大とすることは、熱交換器に接する表面積が小となり、熱交換器への伝熱性を悪くする欠点がある。 That is, the thin portion provided on the ceramic substrate side, to the plane as large, there is a drawback that the surface area in contact with the heat exchanger is deteriorated small, and the heat transfer to the heat exchanger.
そこで本発明は、セラミック基板の亀裂に対処しつつ、伝熱性の良いセラミック回路基板構造を提供することを課題とする。 The present invention is to address the crack of the ceramic substrate, and to provide a good ceramic circuit board structure heat conductivity.

請求項1に記載の本発明は、セラミック基板(1) の表面および裏面に第1金属板(2)および第2金属板(3)がろう付けにより接合されたセラミック回路基板構造において、 The present invention according to claim 1, in the surface and the first metal plate on the back (2) and the second metal plate (3) ceramic circuit board structure that is joined by brazing a ceramic substrate (1),
熱交換器の表面に接合される側の前記第2金属板(3) は、その厚み方向の中間がくびれるように形成されて、セラミック基板(1)側の端部の外周に平面が拡大する薄肉の薄肉拡大部(4) が形成されると共に、相対的に前記中間に平面が縮小する縮小中間部(5)が形成され且つ、熱交換器(7) 側の端部の外周に平面が拡大する伝熱拡大部(6)が形成され、 The second metal plate on the side to be bonded to the surface of the heat exchanger (3), that the thickness direction intermediate is formed as constricted, it plans to expand the outer periphery of an end portion of the ceramic substrate (1) side with thin expanded portion of the thin-walled (4) is formed, the reduced middle portion relative said intermediate plane is reduced (5) are formed and a plane on an outer periphery of an end portion of the heat exchanger (7) side heat transfer enlarged section enlarge (6) is formed,
前記第2金属板(3)の前記薄肉拡大部(4)および縮小中間部(5)並びに伝熱拡大部(6)は、前記セラミック基板(1)に平行なそれらの各断面が全面に渡り平坦で中実な、隙間のないもので形成され、 The thin enlarged portion (4) and the reduced middle portion of the second metal plate (3) (5) and the heat transfer enlarged portion (6), each cross-section thereof parallel to the ceramic substrate (1) is over the entire surface a solid flat, is formed by those without gaps,
前記第2金属板(3)は、その薄肉拡大部(4)と縮小中間部(5)と伝熱拡大部(6)がそれぞれ銅板またはアルミニウム板の3層の積層体の接合構造からなり、その第2金属板(3)の厚み方向の断面外周が階段状に形成され、かつ前記3層の積層体の第1層である薄肉拡大部(4)の外周と第3層である伝熱拡大部(6)の外周が略同一に形成されたセラミック回路基板構造である。 The second metal plate (3) consists of a structure for joining the thin expanded portion (4) and the reduction intermediate portion (5) and the heat transfer enlarged portion (6) is a three-layer laminate of each copper plate or aluminum plate, its cross-section periphery of the second thickness direction of the metal plate (3) is formed in a stepped shape, and the outer periphery and the heat transfer is a third layer of the thin expanded portion which is the first layer of the laminate of the third layer (4) periphery is a ceramic circuit board structure formed in a substantially same expansion portion (6).

請求項2に記載の本発明は、 請求項1において The present invention according to claim 2, in claim 1,
前記伝熱拡大部(6)の外周が前記セラミック基板(1) の外周に略等しいセラミック回路基板構造である。 The heat transfer enlarged portion outer periphery (6) is substantially equal to the ceramic circuit board structure on the outer periphery of the ceramic substrate (1).

本発明のセラミック回路基板構造は、その第2金属板3として厚み方向の中間がくびれるように形成されて、セラミック基板1側の端部の外周に平面が拡大する薄肉の薄肉拡大部4が形成されている。 Ceramic circuit board structure of the present invention, As the second metal plate 3 is in the thickness direction intermediate so formed as constricted, thin walled expanded portion 4 of the plane is enlarged to the outer periphery of an end portion of the ceramic substrate 1 side formed It is. そして、その第2金属板3の薄肉拡大部4および縮小中間部5並びに伝熱拡大部6は、前記セラミック基板1に平行なそれらの各断面が全面に渡り平坦で中実な、隙間のないもので形成されたので、その薄肉拡大部4の存在により、金属板の加熱接合後の冷却過程や、回路基板の稼働中の冷熱サイクルの付加により生ずる熱応力の最も加わる第2金属板3の端部を、薄肉拡大部4の塑性変形により吸収し、残留応力を低減することができる。 The thin expansion unit 4 and the reduced intermediate section 5 and the heat conducting enlarged portion 6 of the second metal plate 3, the a solid their respective cross section parallel to the ceramic substrate 1 is flat over the entire surface, no gaps since being formed with things, by the presence of the thin enlargement section 4, the process of cooling and after heating bonding the metal plate, most applied to the second metal plate 3 of the thermal stress caused by the addition of thermal cycle in the circuit board running the ends, is absorbed by the plastic deformation of the thin-walled expanded portion 4, it is possible to reduce the residual stress. それと共に、相対的に平面が縮小する縮小中間部5が形成されていても、熱交換器7側の端部外周に平面が拡大する伝熱拡大部6を設けているから、その熱交換器7と第2金属板3との伝熱性を向上し、回路基板稼働時に生じる熱を熱交換器7に迅速に伝達し、回路基板を確実に保護することができる。 At the same time, even if the reduction intermediate portion 5 relatively flat shrink is formed from flat on the end outer periphery of the heat exchanger 7 side is provided a heat transfer enlarged portion 6 to expand, the heat exchanger 7 and to improve the heat transfer between the second metal plate 3, the heat generated during the circuit board operate rapidly transferred to the heat exchanger 7, it is possible to protect the circuit board reliably.

さらに、第2金属板3の厚み方向の断面外周を3層の階段状に形成したので 、外周の異なる複数の板材を複数重ね合わせて接合することにより容易にセラミック回路基板構造を製造することができる。 Furthermore, that since the formation of the cross-sectional periphery of the second thickness direction of the metal plate 3 in three layers stepped, easily produced ceramic circuit board structure by bonding superposed plurality a plurality of plates having different outer periphery it can. しかも、3層の積層体の第1層である薄肉拡大部4の外周と第3層である伝熱拡大部6の外周とを略同一に形成したので、第1層の熱応力の吸収と、第3層の伝熱性の向上とをバランスよく確実に実現できる。 Moreover, since the outer periphery of the thin expanded portion 4 is the first layer of the laminate of three layers and the outer periphery of the heat transfer enlarged portion 6 which is a third layer formed on substantially the same, and absorption of thermal stress of the first layer , it can be realized and the improvement of heat conductivity of the third layer with good balance reliably.
上記構成において、 請求項2に記載の発明のように、第2金属板3の伝熱拡大部6の外周をセラミック基板1の外周に略等しく形成することができる。 In the above structure, it is possible as in the invention according to claim 2, substantially equal form the outer periphery of the second metal plate 3 of the heat transfer enlarged portion 6 to the outer periphery of the ceramic substrate 1. この場合には、セラミック基板1と第2金属板3とを接合する際の両者の位置決めを容易に行える。 In this case, easily the positioning of both when joining the ceramic substrate 1 and the second metal plate 3.

次に、図面に基づいて本発明の実施の形態につき説明する。 It will now be described embodiments of the present invention with reference to the accompanying drawings.
図1は本発明のセラミック回路基板構造を熱交換器7に接合した状態の縦断面図であり、図2は図1のII−II矢視断面図、図3は図1のIII−III矢視図である。 Figure 1 is a longitudinal sectional view of a state where a ceramic circuit board structure of the present invention joined to the heat exchanger 7, FIG. 2 is II-II cross-sectional view taken along Figure 1, III-III arrow in Fig. 3 Fig. 1 it is a visual diagram.
このセラミック回路基板構造は、セラミック基板1の表面および裏面に第1金属板2,第2金属板3がろう付けにより接合されている。 The ceramic circuit board structure, the first metal plate 2 on the front surface and the back surface of the ceramic substrate 1, are joined by second metal plate 3 is brazed. そして第1金属板2側にパワートランジスタや電源モジュール等が接合されると共に、第2金属板3側が熱交換器7に接合される。 And with the power transistors and power modules or the like is joined to the first metal plate 2 side, a second metal plate 3 side is joined to the heat exchanger 7.

そして、第2金属板3は図1および図2に示す如く、その厚み方向の中間がくびれるように形成されて、セラミック基板1側の端部の外周に平面が拡大する薄肉の薄肉拡大部4が設けられると共に、相対的に中間に平面が縮小する縮小中間部5が設けられる。 The second metal plate 3 as shown in FIGS. 1 and 2, its thickness direction intermediate is formed as constricted, thin walled expanded portion 4 of the plane to the outer periphery of an end portion of the ceramic substrate 1 side is expanded together are provided, is reduced intermediate portion 5 of the plane is reduced is provided in a relatively intermediate. さらに、熱交換器7側の端部の外周に平面が拡大する伝熱拡大部6が形成されている。 Further, heat transfer enlarged portion 6 which plane on the outer periphery of an end portion of the heat exchanger 7 side is expanded is formed. この例では、薄肉拡大部4と縮小中間部5と伝熱拡大部6とは、夫々銅板またはアルミニウム板の3層の接合体からなり、その断面外周は階段状に形成されている。 In this example, the thin-walled expanded portion 4 and the reducing intermediate portion 5 and the heat transfer enlarged portion 6 consists conjugate three layers of each copper plate or an aluminum plate, its cross-sectional periphery is formed in a stepwise manner.

このようなセラミック回路基板構造は、第1金属板2側に接続される図示しないパワートランジスタ等からの発熱が、第1金属板2,セラミック基板1,第2金属板3を介し熱交換器7に伝熱され、パワートランジスタ等が異常に高温になるのを防止するものである。 Such ceramic circuit board structure, heat generated from the power transistor or the like (not shown) connected to the first metal plate 2 side, the first metal plate 2, the ceramic substrate 1, the heat exchanger 7 through the second metal plate 3 the heat is transferred, is intended to prevent the power transistor or the like becomes abnormally high temperature. このとき、パワートランジスタ等は冷熱サイクルが付加され、金属板とセラミックの熱膨張係数の差に基づく熱応力の主応力部は第2金属板3の端部に生じる。 At this time, the power transistor or the like is added cold cycle, the main stress of the heat stress based on the difference in the thermal expansion coefficient of the metal plate and the ceramic occurs in the end portion of the second metal plate 3. 即ち、熱応力の最大値は第2金属板3の端部に生ずる。 That is, the maximum value of thermal stress is generated in an end portion of the second metal plate 3.

その熱応力は第2金属板3の薄肉拡大部4の周縁部が容易に塑性変形することにより吸収され、残留応力を低減する。 Thermal stress is absorbed by the peripheral portion of the thin expanded portion 4 of the second metal plate 3 is easily plastically deformed, reducing residual stress. それによって、第2金属板3との端部で、セラミック基板1に亀裂が生じるのを防止する。 Thereby, at the end of the second metal plate 3, to prevent the cracks in the ceramic substrate 1. 即ち、縮小中間部5を介し、伝熱拡大部6が熱交換器7に接合されるものであるから、その熱交換器7と第2金属板3との伝熱面積が大となり、第1金属板2上の発熱を熱交換器7に円滑に伝熱してそれを放熱することができる。 That is, through the reduced intermediate section 5, since it is intended to heat transfer enlarged portion 6 is joined to the heat exchanger 7, next to the heat transfer area between the heat exchanger 7 and the second metal plate 3 is large, the first the heat generated on the metal plate 2 can be dissipated it smoothly conducts the heat to the heat exchanger 7.

次に、図4は本発明の第2の実施の形態を示し、この例の第2金属板3は薄肉拡大部4と縮小中間部5と伝熱拡大部6とが一体に形成され且つ、その厚み方向の断面外周が凹湾曲形状に形成されたものである。 Next, FIG. 4 shows a second embodiment of the present invention, and a second metal plate 3 of this embodiment is a thin expanded portion 4 and the reduction intermediate portion 5 and the heat transfer enlarged portion 6 is integrally formed, its cross-section periphery of the thickness direction and is formed on the concave curvature shape. そして、第2金属板3のセラミック基板1との接触部に薄肉拡大部4が形成されると共に、熱交換器7の接触部に伝熱拡大部6が設けられ、中間に縮小中間部5が設けられたものである。 Then, the thin-walled expanded portion 4 is formed in the contact portions between the ceramic substrate 1 of the second metal plate 3, the heat transfer enlarged portion 6 is provided on the contact portion of the heat exchanger 7, the reduced intermediate section 5 in the middle it is those provided.

次に、図5は本発明の第3の実施の形態を示し、この例では、第2金属板3の断面外周をV字状に形成したものである。 Next, FIG. 5 shows a third embodiment of the present invention, in this example, is obtained by forming the cross-sectional periphery of the second metal plate 3 in a V-shape. そして、図4と同様にセラミック基板1側の接触部に薄肉拡大部4を、熱交換器7側の接触部に伝熱拡大部6を、それらの中間に縮小中間部5を設けたものである。 Then, a thin expanded portion 4 to the contact portion of the ceramic substrate 1 side as in FIG 4, the heat transfer enlarged portion 6 to the contact portion of the heat exchanger 7 side, which was provided with a reduced intermediate portion 5 in their middle is there.

次に、図6および図7は本発明の第4実施の形態を示し、この例が他の例と異なる点は、第2金属板3における伝熱拡大部6が図7の如く、方形の平面の各辺の中間位置に夫々凸部6aが一体に設けられたものである。 Next, FIGS. 6 and 7 show a fourth embodiment of the present invention, this example is another example differs, as the heat transfer enlarged portion 6 of the second metal plate 3 in Figure 7, the square each protrusion 6a at an intermediate position of each side of the plane in which provided integrally. そして、その凸部6aの先端部がセラミック基板1の側端面に整合する。 Then, the tip portion of the convex portion 6a is aligned with the side end surface of the ceramic substrate 1.
なお、伝熱拡大部6の平面外周をセラミック基板1のそれと同一に形成することもできる。 It is also possible to form a planar outer periphery of the heat transfer enlarged portion 6 to the same as that of the ceramic substrate 1. そのようにすることにより、熱交換器7と第2金属板3との伝熱性をより円滑に行うことができる。 By doing so, it is possible to perform heat transfer between the heat exchanger 7 and the second metal plate 3 more smoothly.

本発明のセラミック回路基板構造の第1の実施の形態を示す縦断面図。 Longitudinal sectional view showing a first embodiment of the ceramic circuit board structure of the present invention. 図1のII−II矢視断面図。 II-II cross-sectional view taken along FIG. 図1のIII−III矢視図。 III-III arrow view of FIG. 本発明のセラミック回路基板構造の第2の実施の形態を示す正面図。 Front view illustrating a second embodiment of the ceramic circuit board structure of the present invention.

同構造の第3の実施の形態を示す正面図。 Front view illustrating a third embodiment of the structure. 同構造の第4の実施の形態を示す正面図。 Front view illustrating a fourth embodiment of the structure. 同構造に用いられる伝熱拡大部6の斜視図。 Perspective view of the heat transfer enlarged section 6 used in the structure.

符号の説明 DESCRIPTION OF SYMBOLS

1 セラミック基板 2 第1金属板 3 第2金属板 4 薄肉拡大部 5 縮小中間部 6 伝熱拡大部 1 ceramic substrate 2 first metal plate 3 and the second metal plate 4 thin enlargement unit 5 reduces the intermediate section 6 heat transfer enlarged portion
6a 凸部 7 熱交換器 6a protrusions 7 heat exchanger

Claims (2)

  1. セラミック基板(1) の表面および裏面に第1金属板(2)および第2金属板(3)がろう付けにより接合されたセラミック回路基板構造において、 The surface and the first metal plate on the back (2) and the second metal plate (3) ceramic circuit board structure that is joined by brazing a ceramic substrate (1),
    熱交換器の表面に接合される側の前記第2金属板(3) は、その厚み方向の中間がくびれるように形成されて、セラミック基板(1)側の端部の外周に平面が拡大する薄肉の薄肉拡大部(4) が形成されると共に、相対的に前記中間に平面が縮小する縮小中間部(5)が形成され且つ、熱交換器(7) 側の端部の外周に平面が拡大する伝熱拡大部(6)が形成され、 The second metal plate on the side to be bonded to the surface of the heat exchanger (3), that the thickness direction intermediate is formed as constricted, it plans to expand the outer periphery of an end portion of the ceramic substrate (1) side with thin expanded portion of the thin-walled (4) is formed, the reduced middle portion relative said intermediate plane is reduced (5) are formed and a plane on an outer periphery of an end portion of the heat exchanger (7) side heat transfer enlarged section enlarge (6) is formed,
    前記第2金属板(3)の前記薄肉拡大部(4)および縮小中間部(5)並びに伝熱拡大部(6)は、前記セラミック基板(1)に平行なそれらの各断面が全面に渡り平坦で中実な、隙間のないもので形成され、 The thin enlarged portion (4) and the reduced middle portion of the second metal plate (3) (5) and the heat transfer enlarged portion (6), each cross-section thereof parallel to the ceramic substrate (1) is over the entire surface a solid flat, is formed by those without gaps,
    前記第2金属板(3)は、その薄肉拡大部(4)と縮小中間部(5)と伝熱拡大部(6)がそれぞれ銅板またはアルミニウム板の3層の積層体の接合構造からなり、その第2金属板(3)の厚み方向の断面外周が階段状に形成され、かつ前記3層の積層体の第1層である薄肉拡大部(4)の外周と第3層である伝熱拡大部(6)の外周が略同一に形成されたセラミック回路基板構造。 The second metal plate (3) consists of a structure for joining the thin expanded portion (4) and the reduction intermediate portion (5) and the heat transfer enlarged portion (6) is a three-layer laminate of each copper plate or aluminum plate, its cross-section periphery of the second thickness direction of the metal plate (3) is formed in a stepped shape, and the outer periphery and the heat transfer is a third layer of the thin expanded portion which is the first layer of the laminate of the third layer (4) ceramic circuit board structure outer circumference formed in a substantially same expansion portion (6).
  2. 請求項1において According to claim 1,
    前記伝熱拡大部(6)の外周が前記セラミック基板(1) の外周に略等しいセラミック回路基板構造。 Substantially equal ceramic circuit board structure on the outer periphery of the outer periphery is the ceramic substrate of the heat transfer enlarged portion (6) (1).
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