JP5160780B2 - フラッシュメモリ装置の電圧生成器 - Google Patents
フラッシュメモリ装置の電圧生成器 Download PDFInfo
- Publication number
- JP5160780B2 JP5160780B2 JP2006354190A JP2006354190A JP5160780B2 JP 5160780 B2 JP5160780 B2 JP 5160780B2 JP 2006354190 A JP2006354190 A JP 2006354190A JP 2006354190 A JP2006354190 A JP 2006354190A JP 5160780 B2 JP5160780 B2 JP 5160780B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- generator
- power supply
- voltage generator
- outputs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
Description
200 :ワードラインブロックスイッチ
300 :メモリセルアレイ
110 :第1の電圧生成器
120 :第2の電圧生成器
130 :バッファ部
140 :第3の電圧生成器
150 :増幅器
111, 131, 141, 151 :比較器
121 : NMOSトランジスタ
R1〜R9 :抵抗
Claims (5)
- 基準電圧及び直列に接続された複数の抵抗によって分配された電源電圧に応答して一定の第1の電圧を生成する第1の電圧生成器;
上記第1の電圧に応答して第2の電圧を生成し、上記第2の電圧が温度の変化に応じて変動する第2の電圧生成器;
上記第2の電圧に応答して第3の電圧を出力するバッファ部;
上記基準電圧に応答して第4の電圧を出力し、上記電源電圧の変動により上記第4の電圧が変動する第3の電圧生成器;及び
上記第3の電圧により上記第4の電圧を増幅する増幅器を含むフラッシュメモリ装置の電圧生成器。 - 上記第1の電圧生成器は、
上記第1の電圧と上記電源電圧に応じて分配電圧を出力する電圧分配部と、
上記分配電圧と前記基準電圧とを比較して上記第1電圧を出力する比較器を含む請求項1に記載のフラッシュメモリ装置の電圧生成器。 - 上記第2の電圧生成器は、
上記第1の電圧により動作し、周辺温度に応じてしきい値電圧が変わるNMOSトランジスタを含み、
上記NMOSトランジスタの温度依存性と相反する温度依存性を有する第2の電圧を出力する請求項1に記載のフラッシュメモリ装置の電圧生成器。 - 第3の電圧生成器は、
上記基準電圧と上記第4の電圧とを比較する比較器;
上記電源電圧の変動により抵抗値が変わる複数の可変抵抗器に上記比較器の出力電圧を分配して上記第4の電圧を出力する可変抵抗を含む請求項1に記載のフラッシュメモリ装置の電圧生成器。 - 上記可変抵抗は、
複数の抵抗及び複数のスイッチを含み、
上記スイッチのオンまたはオフ状態により多様なレベルの電圧が出力される請求項4に記載のフラッシュメモリ装置の電圧生成器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060096201A KR100816214B1 (ko) | 2006-09-29 | 2006-09-29 | 플래쉬 메모리 장치의 전압 생성기 |
KR10-2006-0096201 | 2006-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008090991A JP2008090991A (ja) | 2008-04-17 |
JP5160780B2 true JP5160780B2 (ja) | 2013-03-13 |
Family
ID=39256039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006354190A Expired - Fee Related JP5160780B2 (ja) | 2006-09-29 | 2006-12-28 | フラッシュメモリ装置の電圧生成器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7417493B2 (ja) |
JP (1) | JP5160780B2 (ja) |
KR (1) | KR100816214B1 (ja) |
CN (1) | CN101154462B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100865852B1 (ko) * | 2007-08-08 | 2008-10-29 | 주식회사 하이닉스반도체 | 레귤레이터 및 고전압 발생기 |
JP2009123292A (ja) | 2007-11-15 | 2009-06-04 | Toshiba Corp | 半導体記憶装置 |
KR100933845B1 (ko) * | 2008-05-28 | 2009-12-24 | 주식회사 하이닉스반도체 | 전압 생성회로 및 이를 구비한 불휘발성 메모리 소자 |
KR100933846B1 (ko) | 2008-05-30 | 2009-12-24 | 주식회사 하이닉스반도체 | 전압 생성장치 및 이를 구비한 불휘발성 메모리 소자 |
TWI387186B (zh) * | 2009-11-04 | 2013-02-21 | Richtek Technology Corp | 提供具有適應性溫度係數之參考信號的參考信號產生器及方法 |
JP2011187104A (ja) * | 2010-03-05 | 2011-09-22 | Renesas Electronics Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の制御方法 |
KR101143446B1 (ko) * | 2010-05-31 | 2012-05-22 | 에스케이하이닉스 주식회사 | 전압 발생 회로 |
US20130313995A1 (en) * | 2012-05-25 | 2013-11-28 | Laurence P. Sadwick | Dimmable LED Driver |
US9318154B2 (en) * | 2012-09-20 | 2016-04-19 | Dell Products L.P. | Method and system for preventing unreliable data operations at cold temperatures |
CN106999201B (zh) | 2014-12-08 | 2020-12-25 | 可控仪器制造公众有限公司 | 机械传动系统及可转向管 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1058270B1 (en) | 1999-06-04 | 2007-03-21 | STMicroelectronics S.r.l. | Biasing stage for biasing the drain terminal of a nonvolatile memory cell during the read phase |
JP2001184881A (ja) * | 1999-12-28 | 2001-07-06 | Toshiba Corp | 不揮発性半導体メモリの読み出し回路 |
JP3866481B2 (ja) * | 2000-05-12 | 2007-01-10 | 株式会社東芝 | 半導体集積回路 |
JP4493169B2 (ja) | 2000-07-04 | 2010-06-30 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
JP3633864B2 (ja) * | 2000-11-29 | 2005-03-30 | Necマイクロシステム株式会社 | 不揮発性メモリの基準電圧発生回路 |
KR100476888B1 (ko) * | 2002-04-04 | 2005-03-17 | 삼성전자주식회사 | 온도보상기능을 가진 멀티비트 플래쉬메모리 |
JP4025167B2 (ja) * | 2002-10-17 | 2007-12-19 | 株式会社東芝 | 抵抗素子を有する半導体装置 |
US7319314B1 (en) * | 2004-12-22 | 2008-01-15 | Cypress Semiconductor Corporation | Replica regulator with continuous output correction |
-
2006
- 2006-09-29 KR KR1020060096201A patent/KR100816214B1/ko not_active IP Right Cessation
- 2006-12-28 JP JP2006354190A patent/JP5160780B2/ja not_active Expired - Fee Related
- 2006-12-28 US US11/617,419 patent/US7417493B2/en active Active
- 2006-12-31 CN CN2006101564543A patent/CN101154462B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101154462A (zh) | 2008-04-02 |
JP2008090991A (ja) | 2008-04-17 |
US7417493B2 (en) | 2008-08-26 |
US20080111615A1 (en) | 2008-05-15 |
CN101154462B (zh) | 2011-12-28 |
KR100816214B1 (ko) | 2008-03-21 |
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