JP5078626B2 - ペリクル、方法(naが1より大きい液浸リソグラフィ・システム用に最適化されたペリクル被膜) - Google Patents
ペリクル、方法(naが1より大きい液浸リソグラフィ・システム用に最適化されたペリクル被膜) Download PDFInfo
- Publication number
- JP5078626B2 JP5078626B2 JP2008001453A JP2008001453A JP5078626B2 JP 5078626 B2 JP5078626 B2 JP 5078626B2 JP 2008001453 A JP2008001453 A JP 2008001453A JP 2008001453 A JP2008001453 A JP 2008001453A JP 5078626 B2 JP5078626 B2 JP 5078626B2
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- JP
- Japan
- Prior art keywords
- pellicle
- layer
- polymer
- layers
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
12b ポリマー層
12c ポリマー層
14 二酸化ケイ素層
14a 二酸化ケイ素層
14b 二酸化ケイ素層
50 ペリクル
51 ペリクル被膜
52 ペリクル・フレーム
53 フォトマスク
54 光
Claims (10)
- フォトマスク用のペリクルであって、
ペリクルフレームと、
前記ペリクルフレームに支持されたペリクル被膜とを備え、
前記ペリクル被膜の外周側面は前記ペリクルフレームに接しており、
前記ペリクル被膜は前記フォトマスクの表面に接合可能であり、
前記ペリクル被膜は透明ポリマー層と透明無機層の交互層を備え、
前記ペリクル被膜は少なくとも3つの層を有し、外側の層は前記透明ポリマー層であり、前記ポリマー層の屈折率は前記無機層の屈折率よりも小さい、ペリクル。 - 透明無機層は2つのポリマー層に挟まれる、請求項1に記載のペリクル。
- 前記ポリマー層は全フッ素化ポリマーであり、前記無機層は二酸化ケイ素である、請求項1に記載のペリクル。
- 前記ポリマー層は全フッ素化ポリマーであり、前記無機層は二酸化ケイ素である、請求項2に記載のペリクル。
- 前記ペリクル被膜は5つの層を備え、外側の上層および下層が透明ポリマーであり、内側の層が無機材料であり、中央の層が透明ポリマーである、請求項1に記載のペリクル。
- 前記ポリマー層は全フッ素化ポリマーであり、前記無機層は二酸化ケイ素である、請求項5に記載のペリクル。
- フォトマスクを使用する方法であって、
像形成システムにおいてフォトマスクを位置決めするステップと、
前記フォトマスクの表面上にペリクルを位置決めするステップとを含み、
前記ペリクルは、ペリクルフレームと、前記ペリクルフレームに支持されたペリクル被膜とを備え、
前記ペリクル被膜の外周側面は前記ペリクルフレームに接しており、
前記ペリクル被膜は透明ポリマー層と透明無機層の交互層を含み、前記ペリクル被膜は少なくとも3つの層を有し、外側の層は前記透明ポリマー層であり、前記ポリマー層の屈折率は前記無機層の屈折率よりも小さく、さらに、
前記フォトマスクの像形成を行うステップを含む、方法。 - 前記ペリクル被膜は3つの層を有する、請求項7に記載の方法。
- 前記ポリマー層は全フッ素化ポリマーであり、前記無機層は二酸化ケイ素である、請求項8に記載の方法。
- 前記ペリクル被膜は5つの層を有する、請求項7に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/669,175 US7416820B2 (en) | 2007-01-31 | 2007-01-31 | Pellicle film optimized for immersion lithography systems with NA>1 |
US11/669175 | 2007-01-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008191656A JP2008191656A (ja) | 2008-08-21 |
JP5078626B2 true JP5078626B2 (ja) | 2012-11-21 |
Family
ID=39668380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008001453A Expired - Fee Related JP5078626B2 (ja) | 2007-01-31 | 2008-01-08 | ペリクル、方法(naが1より大きい液浸リソグラフィ・システム用に最適化されたペリクル被膜) |
Country Status (4)
Country | Link |
---|---|
US (1) | US7416820B2 (ja) |
JP (1) | JP5078626B2 (ja) |
CN (1) | CN101236361A (ja) |
TW (1) | TW200846821A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4861963B2 (ja) * | 2007-10-18 | 2012-01-25 | 信越化学工業株式会社 | ペリクルおよびペリクルの製造方法 |
US8001495B2 (en) | 2008-04-17 | 2011-08-16 | International Business Machines Corporation | System and method of predicting problematic areas for lithography in a circuit design |
KR20140042813A (ko) * | 2011-07-29 | 2014-04-07 | 아사히 가라스 가부시키가이샤 | 리소그래피용 펠리클, 펠리클이 부착된 포토마스크 및 노광 처리 방법 |
WO2014188710A1 (ja) * | 2013-05-24 | 2014-11-27 | 三井化学株式会社 | ペリクル、及びこれらを含むeuv露光装置 |
US9588417B2 (en) * | 2015-05-28 | 2017-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask pellicle |
TWI588597B (zh) * | 2015-10-26 | 2017-06-21 | Micro Lithography Inc | A method and structure for extending the lifetime of a photomask |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61209449A (ja) * | 1985-03-14 | 1986-09-17 | Asahi Chem Ind Co Ltd | 非反射性ペリクル体 |
JPS63284551A (ja) * | 1987-05-15 | 1988-11-21 | Mitsubishi Electric Corp | フォトマスクペリクル装着方法 |
JPH02158735A (ja) * | 1988-12-13 | 1990-06-19 | Mitsui Petrochem Ind Ltd | 高光線透過性防塵体 |
JPH0543238A (ja) * | 1990-10-16 | 1993-02-23 | Mitsui Petrochem Ind Ltd | 高光線透過性防塵膜、その製造方法および防塵体 |
JPH06222551A (ja) | 1993-01-27 | 1994-08-12 | Shin Etsu Chem Co Ltd | 離型性成膜用基板およびペリクル膜の製造方法 |
JPH06230560A (ja) * | 1993-01-29 | 1994-08-19 | Asahi Chem Ind Co Ltd | ペリクル |
JPH0922111A (ja) * | 1995-07-05 | 1997-01-21 | Shin Etsu Chem Co Ltd | ペリクル |
US5686360A (en) * | 1995-11-30 | 1997-11-11 | Motorola | Passivation of organic devices |
US5772817A (en) | 1997-02-10 | 1998-06-30 | Micro Lithography, Inc. | Optical pellicle mounting system |
US6190743B1 (en) | 1998-07-06 | 2001-02-20 | Micro Lithography, Inc. | Photomask protection system |
US6197454B1 (en) | 1998-12-29 | 2001-03-06 | Intel Corporation | Clean-enclosure window to protect photolithographic mask |
TW507267B (en) | 1999-09-13 | 2002-10-21 | Asahi Glass Co Ltd | Pellicle and its manufacturing method |
US6824930B1 (en) * | 1999-11-17 | 2004-11-30 | E. I. Du Pont De Nemours And Company | Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses |
JP2001154340A (ja) * | 1999-11-25 | 2001-06-08 | Asahi Glass Co Ltd | ペリクル |
CN1237395C (zh) | 2000-12-27 | 2006-01-18 | 三井化学株式会社 | 薄膜和薄膜的制造方法以及薄膜用粘合剂 |
KR100505283B1 (ko) | 2001-10-31 | 2005-08-03 | 미쓰이 가가쿠 가부시키가이샤 | 펠리클 및 펠리클 부착 마스크의 제조 방법 |
US20050042524A1 (en) | 2003-08-22 | 2005-02-24 | Bellman Robert A. | Process for making hard pellicles |
JP2005070120A (ja) | 2003-08-27 | 2005-03-17 | Shin Etsu Chem Co Ltd | リソグラフィ用ペリクル |
US7504192B2 (en) | 2003-12-19 | 2009-03-17 | Sematech Inc. | Soft pellicle for 157 and 193 nm and method of making same |
JP4873565B2 (ja) * | 2006-04-07 | 2012-02-08 | 信越化学工業株式会社 | リソグラフィー用ペリクル |
-
2007
- 2007-01-31 US US11/669,175 patent/US7416820B2/en active Active
-
2008
- 2008-01-08 JP JP2008001453A patent/JP5078626B2/ja not_active Expired - Fee Related
- 2008-01-24 CN CN200810008823.3A patent/CN101236361A/zh active Pending
- 2008-01-28 TW TW097103054A patent/TW200846821A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN101236361A (zh) | 2008-08-06 |
US7416820B2 (en) | 2008-08-26 |
TW200846821A (en) | 2008-12-01 |
JP2008191656A (ja) | 2008-08-21 |
US20080182180A1 (en) | 2008-07-31 |
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