JP5024738B2 - Micro electromechanical device - Google Patents

Micro electromechanical device Download PDF

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JP5024738B2
JP5024738B2 JP2010233462A JP2010233462A JP5024738B2 JP 5024738 B2 JP5024738 B2 JP 5024738B2 JP 2010233462 A JP2010233462 A JP 2010233462A JP 2010233462 A JP2010233462 A JP 2010233462A JP 5024738 B2 JP5024738 B2 JP 5024738B2
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film
gate electrode
insulating film
cavity
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JP2011064688A (en
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浩行 島田
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セイコーエプソン株式会社
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  The present invention relates to a micro electro mechanical device, a semiconductor device, a method for manufacturing a micro electro mechanical device, and a method for manufacturing a semiconductor device.
  Attention has been focused on the development and application of sensors using electromechanical system (MEMS) technology, which is made up of microscopic parts fabricated using semiconductor microfabrication technology.
  For example, as the sensor, there are a pressure sensor, an acceleration sensor, and the like, and a technique for measuring a pressure or the like by a change in capacitance between two electrodes is employed (for example, see Patent Document 1 below).
  In addition, as described in Patent Document 2 and Non-Patent Document 1 below, sensors using FETs (Field Effect Transistors) are being developed.
JP 2006-126182 A JP 2007-71846 A
S. Buschnakowski, et. Al., "Development and Characterization of a High Aspect Ratio Vertical FET Sensor for Motion Detection", Tranceducers2003, pp. 1391-1394 (2003).
  The inventor is considering further miniaturization and higher performance of various sensors using the MEMS technology.
  However, in the sensor using the change in capacitance, the sensitivity is reduced due to the parasitic capacitance of the wiring connected to the sensor, or the area of the electrode is large (for example, 300 to 500 μm square) in order to improve the sensitivity. There is a problem that it must be made.
  On the other hand, when the FET is used, it is possible to reduce the size and increase the sensitivity by the signal amplification function of the FET.
  However, the techniques described in Patent Document 2 and Non-Patent Document 1 have a problem that the three-dimensional structure is complicated and the manufacturing process is complicated and long.
  Therefore, a specific aspect according to the present invention aims to improve characteristics of a micro electro mechanical device and simplify a manufacturing process. It is another object of the present invention to improve the performance and simplify the manufacturing process of a semiconductor device in which a semiconductor element and a micro electric machine are mixedly mounted.
  (1) A microelectromechanical device according to the present invention includes a semiconductor layer, source and drain regions formed on both sides of a channel region in the semiconductor layer, a gate insulating film formed on the semiconductor layer, A cavity formed on the gate insulating film; and a gate electrode formed on the cavity. The gate electrode is configured to be movable so as to be in contact with the gate insulating film, and is added to the gate electrode. The force is detected by the contact area between the gate electrode and the gate insulating film.
  According to this configuration, the force applied on the gate electrode can be detected based on the contact area between the gate electrode and the gate insulating film. Further, by using a temporary FET structure, the device can be simplified.
  The detection is performed by a current flowing in the channel region overlapping the contact area. Thus, the force applied on the gate electrode can be accurately detected by utilizing the fact that the current flowing in the channel region varies depending on the contact area.
  The source and drain regions have a pair of comb-teeth shapes in which teeth are alternately arranged. According to this configuration, the channel region can be effectively laid out and detection accuracy can be improved.
  A first insulating film surrounding the cavity is provided on the semiconductor layer. According to such a configuration, the cavity is defined by the first insulating film, and the cavity height can be ensured by the thickness of the first insulating film.
  The gate electrode has a through hole reaching the cavity. Thus, the gate electrode may have a through hole.
  A protective film made of a second insulating film is provided on the gate electrode. According to such a configuration, the cavity can be sealed and the deterioration of the gate electrode can be reduced.
  The gate electrode is made of polycrystalline silicon, a refractory metal, or a composite film or a compound film thereof. As described above, polycrystalline silicon, refractory metal, or the like may be used as the gate electrode.
  (2) A semiconductor device according to the present invention is a semiconductor device having a semiconductor element and a microelectromechanical sensor, and is formed in a semiconductor layer, a first region of the semiconductor layer, and a channel region in the semiconductor layer. Source and drain regions formed on both sides, a gate insulating film formed on the semiconductor layer, a cavity formed on the gate insulating film, and a gate electrode formed on the cavity The gate electrode is configured to be movable so as to be in contact with the gate insulating film, and a microelectromechanical sensor that detects a force applied on the gate electrode based on a contact area between the gate electrode and the gate insulating film; And a semiconductor element formed in the second region of the semiconductor layer.
  As described above, the micro electro mechanical sensor is configured as an FET having a cavity between the gate electrode and the gate insulating film, so that semiconductor elements can be easily mounted on the same semiconductor layer. Therefore, it is possible to reduce the size and performance of the semiconductor device.
  The semiconductor element is a MISFET, and the gate electrode of the MISFET and the gate electrode of the micro electro mechanical sensor are made of the same material. In this way, by sharing the constituent members of the semiconductor element such as MISFET and the constituent members of the microelectromechanical sensor, the configuration of the apparatus can be simplified and the manufacture thereof is facilitated.
  (3) A method for manufacturing a microelectromechanical device according to the present invention includes a step of preparing a substrate having a semiconductor layer, and a step of forming source and drain regions by implanting impurities into a predetermined region of the semiconductor layer. Forming a first insulating film on the semiconductor layer; forming a conductive film on the first insulating film; and forming a through hole in the conductive film that reaches the first insulating film. A step of etching the first insulating film through the through hole to form a cavity exposing the semiconductor layer under the conductive film; and a surface of the semiconductor layer exposed by performing heat treatment Forming a second insulating film.
  According to this method, it is possible to easily form a microelectromechanical device that detects a force applied on the gate electrode based on a contact area between the gate electrode and the gate insulating film. Specifically, the thickness of the first insulating film becomes the height of the cavity, and the size of the cavity can be easily controlled. Further, the cavity can be easily formed by etching through the through hole of the gate electrode. Further, the second insulating film can be easily formed by thermally oxidizing the semiconductor layer exposed at the bottom of the cavity.
  The source and drain regions have a pair of comb-teeth shapes in which teeth are alternately arranged. According to this method, the channel region can be effectively laid out and a high-performance device can be formed.
  (4) A method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device having a semiconductor element and a microelectromechanical sensor, the step of preparing a substrate having a semiconductor layer, and a first of the semiconductor layer. Forming a microelectromechanical sensor in a region, forming a source and drain region by implanting impurities into a predetermined region of the first region, and forming a first insulating film on the semiconductor layer. Forming a conductive film on the first insulating film, forming a through hole reaching the first insulating film in the conductive film, and the first through the through hole. Etching the insulating film to form a cavity exposing the semiconductor layer under the conductive film; and forming a second insulating film on the surface of the semiconductor layer exposed by heat treatment. Having the semiconductor layer And a step of forming a semiconductor element on the second region.
  According to this method, a semiconductor device in which a micro electro mechanical sensor and a semiconductor element are mixedly mounted can be manufactured. In addition, the constituent member of the semiconductor element and the constituent member of the micro electro mechanical sensor can be formed in the same process, and the manufacturing process can be simplified.
  The semiconductor element is a MISFET, and includes a step of forming the gate electrode of the MISFET by forming the conductive film in the first and second regions and patterning the conductive film in the second region. As described above, the conductive film may be formed in the first and second regions, and the gate electrode of the microelectromechanical sensor and the gate electrode of the MISFET may be formed.
It is sectional drawing and a top view which show typically the structure of the MEMS sensor (a pressure sensor, a microelectromechanical apparatus) of this Embodiment. It is sectional drawing and a top view which show the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing and a top view which show the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing which shows the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing and a top view which show the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing which shows the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing which shows the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing which shows the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing which shows the manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing which shows the other manufacturing method of the MEMS sensor of this Embodiment. It is sectional drawing which shows an example of MISFET.
  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same or related code | symbol is attached | subjected to what has the same function, and the repeated description is abbreviate | omitted.
(Configuration of MEMS sensor)
FIG. 1 is a cross-sectional view and a plan view schematically showing the configuration of the MEMS sensor (pressure sensor, microelectromechanical device) of the present embodiment.
  As shown in FIG. 1A, the MEMS sensor of the present embodiment includes a gate electrode (gate electrode plate, diaphragm) 17, a gate insulating film 19, and a source / drain electrode 13. Here, between the gate insulating film 19 and the gate electrode 17, a cavity (cavity, space, recess, movable space of the gate electrode) 15a is disposed. This cavity is surrounded by an insulating film 15. As will be described later, the gate insulating film 19 may be disposed only under the cavity 15a.
  When the pressure P <b> 1 is applied to the gate electrode 17, the gate electrode 17 bends and contacts the gate insulating film 19. The contact area is, for example, TA1 in FIG. At this time, it can be detected that a current (drain current) flows between the source and drain regions 13 (channel region) and pressure is applied to the gate electrode 17.
  Further, as shown in FIG. 1C, when the pressure P2 applied to the gate electrode 17 is small (when P2 <P1), the contact area TA2 (<TA1) between the gate electrode 17 and the gate insulating film 19 is small. (See FIG. 1B), the amount of current flowing between the source and the drain is reduced.
  Thus, according to the present embodiment, the pressure applied to the gate electrode 17 can be detected based on the contact area between the gate electrode 17 and the gate insulating film 19. More specifically, the pressure applied to the gate electrode 17 by the current flowing in the channel region overlapping with the contact area can be detected. Note that a transistor with a variable channel region through which current flows can be said to be an area modulation type transistor.
(Process for manufacturing MEMS sensors)
Next, the manufacturing method of the MEMS sensor according to the present embodiment will be described with reference to FIGS. 2-9 is sectional drawing or the top view which shows the manufacturing method of the MEMS sensor of this Embodiment. The cross-sectional view corresponds to the AA cross section of the plan view.
  As shown in FIG. 2A, for example, a silicon substrate is prepared as the semiconductor substrate 1. Although the semiconductor substrate 1 is used here, for example, a glass substrate on which a semiconductor film is formed, an SOI (Silicon on quartz) substrate, or the like may be used. In short, a substrate having a semiconductor layer on its surface may be used.
  Next, a thermal oxidation mask film (not shown) is formed in an element region (element formation region, sensor portion) ER on the semiconductor substrate 1. For example, a silicon nitride film is deposited by a CVD (Chemical Vapor Deposition) method and patterned into a substantially rectangular shape, for example, 10 to 50 μm square. That is, a photoresist film is formed on the silicon nitride film, and a substantially rectangular photoresist film is formed by exposure and development (photolithography). Next, the silicon nitride film is etched using the photoresist film as a mask. Next, the remaining photoresist film is removed. A series of steps from formation to removal of the photoresist film is called patterning.
  Next, for example, a LOCOS (Local Oxidation of Silicon) film having a thickness of 300 nm is formed as the element isolation film 11 by thermal oxidation using the silicon nitride film as a mask (FIG. 2B). Thereafter, the silicon nitride film is removed by etching to expose the surface of the semiconductor substrate 1 in the element region ER (FIG. 2C). A trench isolation film (STI: Shallow Trench Isolation technology) may be used as the element isolation film 11.
  Next, as shown in FIG. 3A, source and drain regions 13 are formed in the semiconductor substrate 1 in the element region ER. A photoresist film having a predetermined shape (for example, a zigzag shape like a white portion in ER in FIG. 3B) is formed, and impurities (phosphorus or boron) are formed in the semiconductor substrate 1 using the film as a mask. Etc.). Next, the photoresist film is removed, annealing (heat treatment) is performed, and impurities are diffused and activated.
  Here, as shown in FIG. 3B, the source / drain region 13 has a pair of comb teeth. That is, each of the source region and the drain region 13 includes a trunk line extending in the X direction and a plurality of branch lines (tooth portions) extending from the trunk line in the Y direction and arranged at intervals (3d). Is done. Further, these branch lines are alternately arranged with an interval (d). The width and interval of the branch lines are, for example, about 0.5 μm. The space between these branch lines is the main channel region. The shape of the source / drain region 13 is not limited to the comb-teeth shape, and various modifications can be made. However, according to the above comb-teeth shape, the channel region can be extended to the entire surface of the element region ER, and the amplification factor of the FET can be increased (for example, in the ER of FIG. 3B). (See the white areas in the section.)
  Next, as shown in FIG. 4, for example, a silicon oxide film is deposited on the element region ER and the element isolation film 11 as an insulating film (sacrificial layer) 15 by a CVD method to about 100 nm. As will be described later, the thickness of the insulating film 15 becomes the height of the cavity 15a. Therefore, the sensor characteristics can be easily adjusted by appropriately adjusting the thickness of the insulating film in consideration of physical properties (such as Young's modulus), size, and film thickness of the gate electrode (17) material.
  Next, a polycrystalline silicon film doped with an impurity such as phosphorus is deposited as a conductive film 17 on the insulating film 15 by a CVD method to about 200 nm. This conductive film 17 becomes a gate electrode. In addition to the polycrystalline silicon film, a high melting point metal such as tungsten, tantalum, or molybdenum, an electrode material such as titanium, cobalt, or nickel, or a composite film or a compound film thereof (for example, a silicide film) may be used. .
  Next, as shown in FIG. 5A, the conductive film 17 in the element region ER is patterned to form a through hole (hole) 17a that exposes the lower insulating film 15. That is, using the photoresist film having a plurality of holes as a mask, the conductive film 17 is etched until the insulating film 15 is exposed. Etching is performed, for example, with hydrofluoric acid or hydrogen fluoride vapor. Here, as shown in FIG. 5B, the through-holes 17a are formed in an array at regular intervals.
  Next, as shown in FIG. 6, the insulating film 15 is etched through the through-hole 17a until the underlying semiconductor substrate (source / drain region 13) 1 is exposed, thereby forming the cavity 15a below the conductive film 17. Form. Note that the insulating film 15 remains around the cavity 15a. In other words, the cavity 15a is surrounded (partitioned) by the insulating film 15. The size (capacitance) of the cavity 15a can be controlled by the thickness of the insulating film 15, the number of through holes 17a, and the formation position. Further, the internal stress due to the bending of the gate electrode 17 can be relieved by the through hole 17a.
Next, as shown in FIG. 7, a thermal oxide film (in this case, a silicon oxide film) 19 is formed on the surface of the semiconductor substrate 1 exposed from the bottom of the cavity 15a by performing a heat treatment on the semiconductor substrate 1 in an oxidizing atmosphere. . This thermal oxide film (silicon oxide film) 19 becomes a gate insulating film. Although not shown, the back surface (surface on the cavity 17a side) of the conductive film 17 is slightly thermally oxidized by this heat treatment. As the thermal oxide film, a silicon oxynitride film may be used in addition to the silicon oxide film. In this case, heat treatment is performed in a nitrogen oxide (NO, N 2 O) atmosphere.
  Next, as shown in FIG. 8, for example, a silicon nitride film is formed as a protective film 21 on the conductive film 17 under reduced pressure, and the cavity 15a is vacuum-sealed. The silicon nitride film is formed to a thickness of about 200 nm by, for example, a high-density plasma (HDP) -CVD method. At this time, it is preferable to use a film forming method in which isotropic deposition components are increased. In the case of isotropic film formation, film formation proceeds in a bowl shape at the upper corners of the through holes 17a of the conductive film 17, and the upper parts of the through holes 17a are filled in the initial stage. Therefore, the protective film 21 does not easily enter the cavity 15a through the through hole 17a, and the FET characteristics can be easily controlled.
  As the protective film 21, an insulating film such as a silicon oxide film can be used in addition to a silicon nitride film. Thus, by forming an insulating film, the inside of the cavity 15a can be sealed, and deterioration (oxidation etc.) of the conductive film 17 can be reduced. Further, when the silicon nitride film and the polycrystalline silicon film are laminated, the film stress is offset. That is, since the tensile force and compressive force inside each film work in the opposite direction, the internal stress of the laminated film can be relaxed. Therefore, warpage or cracking of the film can be reduced. Next, although not shown, the protective film 21 and the underlying conductive film (gate electrode) 17 are patterned into a desired shape (for example, for each sensor).
  Next, as shown in FIG. 9A, a silicon oxide film is formed as an interlayer insulating film 23 on the protective film 21, and a silicon nitride film is deposited as an uppermost protective film (passivation film) 25 thereon. . In the interlayer insulating film 23, wirings connected to the source / drain regions 13 and the gate electrode 17 may be appropriately formed. At this time, the wiring is laid out while avoiding an opening 27 described later.
  Next, as shown in FIG. 9B, the interlayer insulating film 23 and the uppermost protective film 25 are patterned to form an opening (external pressure inlet) 27 on the element region ER, and the protective film 21 is exposed.
  Through the above steps, the MEMS sensor of the present embodiment is substantially completed.
  As described above, according to the present embodiment, the cavity (cavity) 15 a is provided between the gate electrode 17 and the gate insulating film 19, and the FET structure is temporarily formed by utilizing the bending of the gate electrode 17. Can do. Therefore, the presence / absence of the deflection of the gate electrode 17 or the degree of the deflection can be detected by the operation of the FET. That is, the pressure applied to the gate electrode 17 can be measured and can function as a sensor.
  At this time, the gate electrode 17 only needs to be in contact with the gate insulating film 19, so that the depth of the cavity can be reduced. The source and drain electrodes 13 can use the most advanced micromachining technology in the semiconductor field (for example, CMOS: Complementary Metal-Oxide Semiconductor process), can be further miniaturized, and can be downsized and highly sensitive. Is possible.
  Further, since the gate electrode 17 operates by being in contact with the gate insulating film 19, the mechanical reliability can be increased. For example, even when a high voltage is applied, the gate electrode 17 is protected by being in contact with the gate insulating film 19 and is not easily broken.
  In addition, the detection range can be easily adjusted simply by changing the size of the element region ER. For example, if the element region ER is small, the gate electrode 17 and the gate insulating film 19 do not come into contact with each other unless the pressure is high. The detection range can also be adjusted by changing the thickness of the gate electrode 17 and the height of the cavity 15a (the film thickness of the insulating film 15).
  In addition, since the current amplification effect of the FET can be used, the change in current corresponding to the change in pressure can be increased, and the size can be reduced as compared with a conventional sensor using a capacitance (for example, 300 to 500 μm square). Sensitivity is also improved.
  Further, as described above, the structure and the manufacturing process are simpler than the sensor using the conventional FET, and a high-performance device can be provided with a simple configuration. In addition, throughput can be improved.
  In the above embodiment, for example, a silicon nitride film is formed as the protective film 21 on the conductive film 17 as shown in FIG. 8, but as shown in FIG. 10, for example, Ta (tantalum) or Zr After the metal film 20 such as (zirconium) is deposited by sputtering, a silicon nitride film, for example, may be formed as the protective film 21 on the metal film 20. FIG. 10 is a cross-sectional view showing another method for manufacturing the MEMS sensor of the present embodiment.
  In sputtering of the metal film 20, there are many isotropic deposition components, and the through holes 17 a of the conductive film 17 are likely to be filled at an early stage. In addition, after sealing the cavity 15a in a reduced pressure state, the impurity gas (for example, oxygen) remaining inside the cavity 15a reacts with the metal film 20, and the degree of vacuum inside the cavity 15a can be improved. .
  Note that the MEMS sensor shown in FIG. 10 has the same configuration as the above-described sensor except for the metal film 20. Moreover, the manufacturing method is the same as that of the above-mentioned sensor except the formation process of the said metal film.
  Further, since the MEMS sensor of the above embodiment has a pseudo FET structure, it can be easily mixed with a semiconductor element. That is, it can be formed on the same semiconductor chip. For example, a MEMS sensor may be formed in the sensor formation region R1, and a semiconductor element such as a MISFET (Metal Insulator Semiconductor Field Effect Transistor) may be formed in the semiconductor element formation region R2. Such a MISFET can be used, for example, as a peripheral circuit (drive circuit) for driving a sensor. Examples of the peripheral circuit include a circuit for correcting the temperature of the sensor.
  FIG. 11 shows an example of a MISFET. In FIG. 11, two transistors are arranged on the semiconductor substrate 1. These transistors are formed as follows, for example. A gate electrode 37 is formed on the semiconductor substrate 1 with a gate insulating film 39 interposed therebetween, and source and drain regions 33 are formed on both sides thereof by implanting impurities. Next, an interlayer insulating film 41 is formed on the gate electrode 37, and the interlayer insulating film 41 on the source and drain regions is etched to form a contact hole C1. Next, a conductive film is deposited on the interlayer insulating film 41 including the inside of the contact hole C1 and patterned to form the first layer wiring M1 and the connection part PL1. Thereafter, a multilayer wiring may be formed on the first layer wiring M1 by repeating the formation process of the interlayer insulating film and the wiring. Further, an uppermost protective film is formed on the uppermost layer. The interlayer insulating film and the uppermost protective film correspond to the interlayer insulating film 23 and the uppermost protective film 25 in FIG.
  For example, by configuring the gate electrodes of the MISFET and the microelectromechanical sensor from the same material, the device configuration can be simplified and the manufacture thereof is facilitated. For example, the gate electrode 17 of the MEMS sensor and the gate electrode 37 of the MISFET may be formed by forming a phosphorus-doped polycrystalline silicon film as the conductive film in the sensor formation region R1 and the MEMS sensor and patterning them. .
  In the above example, the gate electrode 17 of the MEMS sensor and the gate electrode 37 of the MISFET are formed of the same material. For example, the first layer wiring M1 of the MISFET and the gate electrode 17 of the MEMS sensor are formed of the same material. May be.
  As described above, the semiconductor device and the MEMS sensor are mixedly mounted in one chip, so that the semiconductor device can be reduced in size and performance. In addition to the peripheral circuits described above, various memories (DRAM, SRAM, EEPROM), a microcomputer, and the like can be mounted together to construct a system and further increase the functionality of the device.
  Further, the manufacturing process can be simplified by sharing the constituent parts of the MEMS sensor and the constituent members such as semiconductor elements.
  For example, such a MEMS sensor (semiconductor device) can be used as a pressure sensor for monitoring the air pressure of an automobile tire, monitoring the intake and exhaust of an engine, and the like. Therefore, a small and highly accurate monitor is possible. Needless to say, the sensor is not limited to being mounted on a vehicle and can be mounted on various devices.
  Further, it can be applied to a vibration sensor and an acceleration sensor in addition to the pressure sensor. Furthermore, for example, the accuracy of these sensors can be improved by appropriately adjusting the mass, support point, shape, or the like of the gate electrode.
  In addition, the examples and application examples described through the above-described embodiment can be used in appropriate combination depending on the application, or can be used with modifications or improvements, and the present invention is limited to the description of the above-described embodiment. Is not to be done. It is apparent from the description of the scope of claims that the embodiments added with such combinations or changes or improvements can be included in the technical scope of the present invention.
  DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 11 ... Element isolation film, 13 ... Source, drain electrode, 15 ... Insulating film, 15a ... Cavity, 17 ... Gate electrode (conductive film), 17a ... Through-hole, 19 ... Gate insulating film (thermal oxidation) 20) Metal film, 21 ... Protective film, 23 ... Interlayer insulating film, 25 ... Uppermost protective film, 27 ... Opening, 33 ... Source, drain region, 37 ... Gate electrode, 39 ... Gate insulating film, 41 ... interlayer insulating film, C1 ... contact hole, ER ... element region, M1 ... first layer wiring, P1, P2 ... pressure, PL1 ... connection part, R1 ... sensor formation region, R2 ... semiconductor element formation region, TA1, TA2 ... Contact area

Claims (2)

  1. A semiconductor layer;
    A first comb-shaped source region formed in the first region of the semiconductor layer;
    A second comb-shaped drain region formed in the first region;
    A first insulating film formed on the second region of the semiconductor layer,
    A second insulating film formed on the third region excluding the second region on said semiconductor layer,
    A cavity formed on the second region,
    Anda gate electrode formed on the second insulating film and the cavity,
    It said source region being disposed in said first region is a toothed portion of the first comb-like structure,
    The drain region disposed in the first region is the second comb-shaped tooth portion,
    The tooth portions of the first comb teeth shape and the tooth portions of the second comb teeth shape are alternately arranged at a predetermined interval,
    The cavity is a space closed by the first insulating film, the second insulating film, and the gate electrode,
    The gate electrode is disposed on the second region and the third region, the gate electrode of the third region is disposed above the gate electrode of the second region,
    The gate electrode is deformed so as to be in contact with the first insulating film,
    A microelectromechanical device, wherein a current defined by a region where the gate electrode and the first insulating film are in contact flows between the source region and the drain region.
  2.   2. The micro electro mechanical device according to claim 1, wherein the gate electrode is made of polycrystalline silicon, a high melting point metal, or a composite film or a compound film thereof.
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KR101593179B1 (en) * 2014-06-30 2016-02-12 서울시립대학교 산학협력단 Field effective transistor typed pressure sensor and method of manufacturing the same
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JPS63168527A (en) * 1987-01-05 1988-07-12 Nissan Motor Co Ltd Semiconductor pressure converter
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US6388299B1 (en) * 1998-12-10 2002-05-14 Honeywell Inc. Sensor assembly and method
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JP2001050702A (en) * 1999-08-06 2001-02-23 Toyota Central Res & Dev Lab Inc Displacement sensor
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