JP4977946B2 - Method for manufacturing ink jet recording head - Google Patents

Description

The present invention relates to, for example, Lee inkjet recording head.

  Conventionally, functional films used for various purposes are usually used after being processed into a desired shape. Examples of such processing methods include various processing methods such as a blast method, a screen printing method, a drilling mask processing method, a laser processing method, and an etching method (dry, wet).

  An example of the functional film that requires fine patterning is an ink jet recording head (hereinafter sometimes simply referred to as “recording head”). This ink jet recording head reciprocates in the main scanning direction, selectively ejects ink droplets from a plurality of nozzles, and prints characters, images, and the like on a recording medium such as recording paper conveyed in the sub scanning direction. It is used for a recording apparatus.

  Such a recording head includes a piezoelectric method and a thermal method. For example, in the case of a piezoelectric method, a piezoelectric material (PZT) film having a thickness of several tens of μm is often used as a piezoelectric actuator as the functional film. In order to form a thick PZT plate, a bulk-fired PZT substrate is usually thinned by lapping (for example, up to about 30 μm), and then subjected to individual patterning by metal electrode deposition, dicing, and blasting.

  However, as the head becomes longer, the handling of PZT substrates (joining of a plurality of substrates) has become stricter in terms of cost. Under such circumstances, PZT film formation by sputtering method or aerosol deposition (AD) method capable of forming a large-area film at a time has been actively studied, and the improvement of the film characteristics is also remarkable. Unlike the conventional bulk PZT, the film forming method directly forms a film on a head component (a vibration plate made of a thin SUS plate or Si plate).

  Therefore, processing (patterning) of the PZT film is also performed after film formation. This processing method also includes several methods such as a blast method and an etching method.

  For example, in the blast method, there is a concern about the processing dimensional accuracy (suitability for miniaturization) of the PZT film and damage to the base substrate.

  On the other hand, etching methods include a dry etching method and a wet etching method. The dry etching method has a very slow etching rate and is difficult to put into practical use in terms of productivity. On the other hand, in the wet etching method, there is a concern about processing dimension accuracy (preferability for miniaturization) of the PZT film and damage to the base substrate.

Various other proposals have been made for the processing of PZT films. For example, Patent Document 1 proposes that the transition region is defined by patterning only the individual metal electrode film on the PZT film (the PZT film itself is not patterned). Patent Document 2 proposes that a PZT film having a predetermined pattern is formed by transferring a PZT film embedded by a So-Gel method into a groove formed in advance on a mold master to the diaphragm side. In Patent Document 3, it is proposed to bond a piezoelectric plate (PZT substrate) to a vibration plate after patterning by a sandblast method. Non-Patent Document 4 proposes processing a PZT film by reactive ion etching (RIE: etching rate is 240 nm / min.) Using Cl ₂ / BCl ₃ gas plasma. Non-Patent Document 5 proposes etching the PZT film by 2step wet etching (buffered HF + HCl) (HCl treatment is performed to remove metal fluoride).
JP 2000-103067 A JP 2000-79686 A JP 2003-48323 A Proc. Of 1999 Dry Process Symposium, p. 179 Mat. Res. Soc. Symp. Proc. Vol. 657 2001 Material Research Society

  However, with the conventional processing methods including the above proposals, 1) the required processing dimensional accuracy (suitability for miniaturization) cannot be obtained, 2) the processing speed is slow, or the PZT film must be attached to the vibration plate after processing. In addition, the productivity is low because the film cannot be processed directly after being deposited directly on the application site. 3) During processing, the PZT film itself or the lower layer (diaphragm or electrode) is damaged. There are problems, there are many merits and demerits, and it is still not sufficient from the current technical requirement level, and there is a demand for a machining method that achieves all of these miniaturization appropriateness, high productivity, and damagelessness. is the current situation.

  These have similar problems not only with PZT films but also with other functional films, and improvements are desired.

The present invention aims to this view of the problems, to provide a method of manufacturing ink jet recording head take advantage of the processing how the functional film to achieve both miniaturization proper and high productivity and damage-less And

In order to achieve the above object, a method of manufacturing an ink jet recording head according to claim 1 according to the present invention includes:
Nozzles that eject ink drops;
A pressure chamber in communication with the nozzle and filled with ink;
A diaphragm constituting a part of the pressure chamber;
An ink pool chamber for pooling ink to be supplied to the pressure chamber via an ink flow path;
A piezoelectric element for displacing the diaphragm;
In the manufacturing method of the inkjet recording head having
A metal film forming step of forming a metal film on the diaphragm ;
Forming a convex pattern on the metal film;
The protruding pattern non-forming region on the protruding pattern and on the metal film on the metal film, a piezoelectric material film forming step of forming a piezoelectric material layer constituting the piezoelectric element,
A first polishing step of polishing the piezoelectric material layer formed on the protruding pattern to said convex pattern is out dew,
Have a second polishing step of polishing to smooth the piezoelectric material layer and said convex pattern of the protruding pattern non-forming region on the metal film,
The thickness of the piezoelectric material film on the non-convex pattern forming region on the metal film formed in the piezoelectric material film forming step is smaller than the thickness of the convex pattern on the metal film,
In the first polishing step, the polishing rate is faster than the second polishing step,
In the second polishing step, smoothing by polishing with an abrasive with particles having a smaller particle size than in the first polishing step so that the concave portions of the convex pattern non-formation region existing after the first polishing step are eliminated. It is with the features.

3. The method of manufacturing an ink jet recording head according to claim 2, wherein the material of the convex pattern is selected from a resin material and a glass material. It is.

The method of manufacturing the ink jet recording head according to claim 3, wherein the step of forming the convex pattern is a step of patterning the resin material by reactive ion etching using a resist formed by a photolithography method as a mask, or 2. The method of manufacturing an ink jet recording head according to claim 1, wherein the method is a step of patterning a photosensitive resin material by a photolithography method.

The method of manufacturing a ink jet recording head according to claim 4 further includes a convex pattern removing step of removing the convex pattern after performing the first polishing step and the second polishing step. An inkjet recording head manufacturing method according to Item 1.

6. The ink jet recording head manufacturing method according to claim 1, further comprising a crystallization step of crystallizing the piezoelectric material film.

According to the present invention, it is possible to provide a manufacturing method of the ink jet recording head take advantage of the processing how the functional film to achieve both miniaturization proper and high productivity and damage-less.

  DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail based on examples shown in the drawings.

(First Reference Example )
FIG. 1 is an explanatory diagram showing the steps of the functional film processing method according to the first reference example .

In this reference example , a case where a PZT film (piezoelectric material film) is applied as a functional film will be described. First, as shown in FIG. 1A, a diaphragm 200 (for example, a SUS substrate) is prepared. Although not shown, the diaphragm is provided on the piezoelectric element substrate, and a flow path may also be formed in practice.

  Next, as shown in FIG. 1B, a metal film to be the lower electrode 202 of the PZT film 206 is deposited by, eg, sputtering. Examples of the electrode material include Au, Ir, Ru, and Pt that have high affinity with a PZT material (PZT film) that is a piezoelectric element and have heat resistance.

  Next, as shown in FIG. 1C, a resin layer (for example, 40 μm) is formed on the diaphragm 200 provided with the lower electrode 202 and patterned to form a resinous convex pattern 204. To do. At this time, the convex pattern 204 and its non-formation region are formed on the vibration plate 200.

  Here, as a method of forming the resinous convex pattern 204, for example, 1) application of thermosetting resin, curing heat treatment, photolithography of Si-containing resist, RIE (reactive ion etching) of the resin layer, resist peeling, 2 3) Photopolymerization polyimide film deposition, heat treatment, Si-containing resist photolitho, vapor deposition polymerization polyimide RIE, resist removal, 3) Photopolymer coating, photolitho (exposure / development), curing heat treatment, 4) Photosensitive dry film application -Photolitho (exposure / development) and the like. As described above, since patterning is performed using a photolithography method of a semiconductor process, the accuracy of dimension and alignment is increased. Moreover, since vapor deposition polymerization polyimide is excellent in a degassing characteristic, it can be applied suitably as a constituent material of the convex pattern 204. Note that the constituent material of the convex pattern 204 is not limited to a resin material, and may be, for example, a glass material or the like, and may be selected from materials that can be easily processed.

  Next, as shown in FIG. 1D, a PZT film 206 is formed with a thickness of 30 μm, for example, on the convex pattern 204 formed on the vibration plate 200 and its non-formation region. A sputtering method or a Sol-Gel method is applied to the film formation.

  Next, as shown in FIG. 1E, the PZT film 206 formed on the convex pattern 204 is polished from the upper surface (PZT film 206 forming surface) side of the diaphragm 200 (first polishing step). The upper surface of the convex pattern 204 is exposed. At this time, since the thickness of the convex pattern 204 is thicker than the thickness of the PZT film 206, the surface of the PZT film 206 formed on the non-formation region of the convex pattern 204 (excluding the peripheral portion) is High reliability can be achieved without being reliably polished and without being damaged during polishing (such as scratches caused by abrasive grains). Further, since the film thickness of the finally obtained PZT film 206 is defined only by the film thickness at the time of film formation regardless of the polishing amount, the variation can be reduced.

Here, in this reference example , as the polishing process, for example, a polishing process (high-speed rough polishing) using a slurry (abrasive) having a large particle size (for example, 1 μm or more) can be performed. As described above, in this reference example , the surface (excluding the peripheral portion) of the PZT film 206 formed on the non-formation region of the convex pattern 204 is not polished, so that the PZT film 206 is not damaged. High-speed polishing can be performed, and productivity can be improved.

  Next, as shown in FIG. 1F, a metal film 208 to be the upper electrode 210 is deposited on the PZT film 206 (including the exposed convex pattern 204) by sputtering. Examples of the electrode material include Au, Ir, Ru, and Pt that have high affinity with a PZT material that is a piezoelectric element and have heat resistance.

  Next, as shown in FIG. 1G, a photoresist 212 is formed on the metal film 208 by an exposure / development process.

  Next, as shown in FIG. 1H, the metal film 208 is patterned by the RIE method.

  Next, as shown in FIG. 1I, the photoresist 212 is stripped with an organic solvent or oxygen plasma. In this way, a patterned upper electrode 210 is formed.

  Next, as shown in FIG. 1J, the resinous convex pattern 204 is removed with an organic solvent or oxygen plasma. Then, heat treatment (for example, about 700 ° C.) is performed to crystallize the PZT film 206. In this way, the film formation from the PZT film 206 to the crystallization can be performed on the vibration plate 200, and the production efficiency is high.

  In FIG. 1J, the resinous convex pattern 204 is removed because the crystallization temperature of the PZT film 206 is higher than the heat resistance temperature of the resinous convex pattern 204 used. . In this way, by removing the convex pattern 204, there is no restriction, so the degree of freedom increases in the production process in the subsequent step.

Next, as shown in FIG. 1K, the FPC board 214 is connected through the solder bumps 216, and the PZT film 206 that functions as a piezoelectric element together with the diaphragm 200 is mounted. Note that although an example of FPC connection is shown in this reference example , electrical connection may be performed using a thin film process.

In the reference example described above, after the PZT film 206 formed on the convex pattern 204 and the non-formation region of the convex pattern 204, only the PZT film 206 formed on the convex pattern 204 is polished. ing. And only by this polishing process, the PZT film 206 is processed (patterned) along the shape of the non-formation region of the convex pattern 204. In addition, this processing can be performed after the functional film is directly formed on the vibration plate 200. For this reason, the processing dimensional accuracy (miniaturization aptitude) is excellent, and the productivity is also excellent.

  Further, as described above, in this polishing process, the surface of the PZT film 206 (excluding the peripheral portion) formed on the non-formation region of the convex pattern 204 is not polished, so that damage during polishing (due to abrasive grains) No scratches etc. For this reason, productivity can be improved and damage-less can be realized.

(Second reference example )
FIG. 2 is an explanatory diagram showing the steps of the functional film processing method according to the second reference example .

In this reference example , the steps shown in FIGS. 2A to 2E are performed. Since these steps are the same as those in the first reference example (see FIGS. 1A to 1E), description thereof is omitted. To do.

  Next, as shown in FIG. 2F, since the PZT film 206 has a recess, the polishing process (second polishing process) is further performed, and the protruding convex pattern 204 and the PZT film 206 are exposed. The upper surface is polished and completely flattened. At this time, the remaining film thickness of the recess becomes the thickness of the final PZT film. The film thickness of the PZT film 206 can also be controlled by this second polishing process (second polishing process).

Here, in this reference example , as the second polishing process, for example, a polishing process (low damage fine polishing) using a slurry (abrasive) having a small particle size (for example, less than 1 μm, more preferably 0.1 μm or less). Can be applied. In this reference example , since the PZT film 206 is flattened, the surface of the PZT film 206 formed on the non-formation region of the convex pattern 204 (excluding the peripheral portion) is also slightly polished. Therefore, the second polishing process is applied to minimize the damage on the surface of the PZT, and the PZT film 206 is planarized.

Next, the steps shown in FIGS. 2G to 2L are performed. Since these are the same as those in the first reference example (see FIGS. 1F to 1K), the description thereof is omitted.

As described above, in the present reference example described above, the second polishing process is performed on the concave portion of the PZT film 206, which can be performed in the processing process of the first reference example , so that the planarization can be performed without damaging the PZT film 206. It becomes possible.

(Third reference example )
FIG. 3 is an explanatory diagram showing the steps of the functional film processing method according to the third reference example .

Since this reference example is the same as the first reference example except that the convex pattern 204 is not removed, description thereof is omitted. Specifically, the step shown in FIG. 3 in the present embodiment (A) ~ FIG 3 (I) corresponds to the step shown in FIG. 1 (A) ~ FIG 1 (I) in the first reference example, the reference example The step shown in FIG. 3 (J) is the step shown in FIG. 1 (K) in the first reference example .

In this reference example , the crystallization temperature of the PZT film 206 is lower than the heat resistant temperature of the constituent material of the convex pattern 204 (in other words, the convex pattern 204 is made of a material having a heat resistant temperature higher than the crystallization temperature ( For example, it can be applied to a case where it is made of a heat resistant resin or a glass material), and the productivity can be further improved. This reference example can also be applied to the case where crystallization (heat treatment) of the PZT film 206 is unnecessary.

(4th reference example )
FIG. 4 is an explanatory diagram showing the steps of the functional film processing method according to the fourth reference example .

Since this reference example is the same as the second reference example except that the convex pattern 204 is not removed, description thereof is omitted. Specifically, the step shown in FIG. 4 in the present embodiment (A) ~ FIG 4 (J) corresponds to the step shown in FIG. 2 (A) ~ FIG 2 (J) in the second reference example, the reference example The step shown in FIG. 4 (K) is the step shown in FIG. 1 (K) in the first reference example .

Also in this reference example , when the crystallization temperature of the PZT film 206 is lower than the heat resistance temperature of the constituent material of the convex pattern 204 (in other words, the convex pattern 204 is made of a material having a heat resistance temperature higher than the crystallization temperature ( For example, it can be applied to a case where it is made of a heat resistant resin or a glass material), and the productivity can be further improved. This reference example can also be applied to the case where crystallization (heat treatment) of the PZT film 206 is unnecessary.

(5th reference example )
FIG. 5 is an explanatory diagram showing the steps of the functional film processing method according to the fifth reference example .

In this reference example , before the PZT film 206 is polished, the metal film 208 to be the upper electrode 210 is formed, the metal film 208 is also polished together with the PZT film 206, and patterning is simultaneously performed. First, in this reference example , the steps shown in FIG. 5A to FIG. 5D are performed, but these are the same as the first reference example (see FIG. 1A to FIG. 1D) and will be described. Omitted.

  Next, as shown in FIG. 5E, a metal film 208 to be the upper electrode 210 is deposited on the entire surface of the PZT film 206 by sputtering.

Next, as shown in FIG. 5F, the PZT film 206 formed on the convex pattern 204 is polished together with the metal film 208 from the upper surface (the surface on which the PZT film 206 is formed) of the vibration plate 200. Then, the upper surface of the convex pattern 204 is exposed. This polishing process is performed in the same manner as the step shown in FIG. 1E of the first reference example . Then, by this polishing process, the metal film 208 is patterned, and the upper electrode 210 is formed.

Next, although the steps shown in FIGS. 5G to 5H are performed, these are the same as those in the first reference example (see FIGS. 1A to 1K), and the description thereof is omitted.

As described above, in this reference example , since the PZT film 206 and the metal film 208 are simultaneously patterned, it is not necessary to pattern the metal film 208 separately to form the upper electrode 210. Productivity can be improved.

(Sixth embodiment)
Hereinafter, an ink jet recording apparatus having an ink jet recording head to which the first to fifth reference examples can be applied will be described in detail. Hereinafter, the PZT film will be referred to as a piezoelectric element 46. In this embodiment, the PZT film (upper electrode) is electrically connected by a thin film process.

In the present embodiment, the recording medium is described as recording paper P. Further, the conveyance direction of the recording paper P in the inkjet recording apparatus 10 is represented by an arrow S as a sub-scanning direction, and the direction orthogonal to the conveyance direction is represented by an arrow M as a main scanning direction. Further, in the figure, when an arrow UP and an arrow LO are shown, it indicates an upward direction and a downward direction, respectively, and when expressed in an up and down direction, it corresponds to each of the arrows. In addition, in the drawing, for the sake of convenience, a smoothed piezoelectric element 46 (PZT film) is shown. However, if the smoothing process (second polishing process in the first to fifth reference examples ) is not performed, the piezoelectric element 46 (PZT film) is shown. ) Has a recess.

  First, an outline of the ink jet recording apparatus 10 will be described. As shown in FIG. 6, the inkjet recording apparatus 10 includes a carriage 12 on which black, yellow, magenta, and cyan inkjet recording units 30 (inkjet recording heads 32) are mounted. A pair of brackets 14 project from the carriage 12 on the upstream side in the conveyance direction of the recording paper P, and the brackets 14 have circular openings 14A (see FIG. 7). A shaft 20 installed in the main scanning direction is inserted through the opening 14A.

  Further, a drive pulley (not shown) and a driven pulley (not shown) constituting the main scanning mechanism 16 are disposed at both ends in the main scanning direction, and wound around the driving pulley and the driven pulley, A part of the timing belt 22 that travels in the main scanning direction is fixed to the carriage 12. Therefore, the carriage 12 is supported so as to be reciprocally movable in the main scanning direction.

  Further, the ink jet recording apparatus 10 is provided with a paper feed tray 26 in which the recording paper P before image printing is bundled and placed above the paper feed tray 26 by an ink jet recording head 32. A paper discharge tray 28 for discharging the recording paper P printed with is provided. A sub-scanning mechanism 18 including a transport roller and a discharge roller for transporting the recording paper P fed one by one from the paper feed tray 26 in the sub-scanning direction at a predetermined pitch is provided.

  In addition, the inkjet recording apparatus 10 is provided with a control panel 24 for performing various settings during printing, a maintenance station (not shown), and the like. The maintenance station includes a cap member, a suction pump, a dummy jet receiver, a cleaning mechanism, and the like, and performs maintenance operations such as a suction recovery operation, a dummy jet operation, and a cleaning operation.

  Further, as shown in FIG. 7, each color ink jet recording unit 30 includes an ink jet recording head 32 and an ink tank 34 that supplies ink to the head. A plurality of nozzles 56 (see FIG. 8) formed on the ink ejection surface 32A are mounted on the carriage 12 so as to face the recording paper P. Accordingly, by selectively ejecting ink droplets from the nozzles 56 to the recording paper P while the ink jet recording head 32 is moved in the main scanning direction by the main scanning mechanism 16, image data is converted into image data for a predetermined band region. A portion of the based image is recorded.

  When one movement in the main scanning direction is completed, the recording paper P is conveyed by a predetermined pitch in the sub scanning direction by the sub scanning mechanism 18, and the ink jet recording head 32 (ink jet recording unit 30) is again moved in the main scanning direction ( A part of the image based on the image data is recorded in the next band area while moving in the opposite direction). By repeating such an operation a plurality of times, the recording paper P The entire image based on the image data is recorded in full color.

  Next, the inkjet recording head 32 in the inkjet recording apparatus 10 configured as described above will be described in detail. FIG. 8 is a schematic plan view showing the configuration of the inkjet recording head 32, and FIG. 9 is a schematic cross-sectional view taken along the line XX of FIG. As shown in FIGS. 8 and 9, the ink jet recording head 32 is provided with an ink supply port 36 communicating with the ink tank 34. The ink 110 injected from the ink supply port 36 is supplied to the ink pool chamber. 38 is stored.

  The volume of the ink pool chamber 38 is defined by a top plate 40 and a partition wall 42, and a plurality of ink supply ports 36 are perforated at predetermined locations on the top plate 40. A resin film air damper 44 (photosensitive dry film 96 to be described later) is provided in the ink pool chamber 38 inside the top plate 40 between the ink supply ports 36 in a row. It has been.

  The top plate 40 may be made of any material such as glass, ceramics, silicon, resin, etc., as long as it is an insulator having a strength that can serve as a support for the inkjet recording head 32. Further, the top plate 40 is provided with a metal wiring 90 for energizing a drive IC 60 described later. The metal wiring 90 is covered and protected by a resin film 92 so that erosion by the ink 110 is prevented.

  The partition wall 42 is formed of resin (photosensitive dry film 98 described later), and partitions the ink pool chamber 38 into a rectangular shape. The ink pool chamber 38 is separated vertically from the pressure chamber 50 via a piezoelectric element 46 and a diaphragm 48 that is bent and deformed in the vertical direction by the piezoelectric element 46. That is, the piezoelectric element 46 and the diaphragm 48 are arranged between the ink pool chamber 38 and the pressure chamber 50, and the ink pool chamber 38 and the pressure chamber 50 are configured not to exist on the same horizontal plane. ing.

  Therefore, the pressure chambers 50 can be arranged close to each other, and the nozzles 56 can be arranged in a matrix at high density. In addition, with such a configuration, an image can be formed in a wide band area by one movement of the carriage 12 in the main scanning direction, so that the scanning time can be shortened. That is, it is possible to realize high-speed printing in which image formation is performed over the entire surface of the recording paper P with a small number of movements and time of the carriage 12.

  The piezoelectric element 46 is bonded to the upper surface of the diaphragm 48 for each pressure chamber 50. The diaphragm 48 is formed of a metal such as SUS, has elasticity in at least the vertical direction, and is configured to bend and deform (displace) in the vertical direction when the piezoelectric element 46 is energized (when a voltage is applied). It has become. The diaphragm 48 may be an insulating material such as glass. A lower electrode 52 having one polarity (also serving as a wiring) is disposed on the lower surface of the piezoelectric element 46, and an upper electrode 54 having the other polarity is disposed on the upper surface of the piezoelectric element 46. The driving IC 60 is electrically connected to the upper electrode 54 by a metal wiring 86.

The piezoelectric element 46 (including the upper electrode 54) is covered and protected by a low water-permeable insulating film 80 (in this embodiment, an SiO _x film is applied). Since the low water-permeable insulating film 80 that covers and protects the piezoelectric element 46 is deposited under the condition that the moisture permeability is low, moisture penetrates into the piezoelectric element 46 and becomes unreliable (PZT film). (Deterioration of piezoelectric characteristics caused by reducing oxygen in the inside) can be prevented. The diaphragm 48 made of metal (SUS or the like) that contacts the lower electrode 52 functions also as a low resistance GND wiring.

  Further, the upper surface of the low water-permeable insulating film 80 of the piezoelectric element 46 is covered and protected with a resin insulating film 82. Thereby, in the piezoelectric element 46, resistance to erosion by the ink 110 is ensured. The low water-permeable insulating film 80 and the resin insulating film 82 cover and protect the piezoelectric element 46 and also cover and protect the lower electrode 52 (wiring) in a region where the piezoelectric element 46 is not provided. It is functioning. Further, the metal wiring 86 is also covered and protected by a resin protective film 88 (second resin insulating film) so that the erosion by the ink 110 is prevented.

  The upper portion of the piezoelectric element 46 is covered and protected by the resin insulating film 82 and is not covered by the resin protective film 88. Since the resin insulating film 82 is a flexible resin layer, such a configuration prevents displacement inhibition of the piezoelectric element 46 (diaphragm 48) (preferably bending deformation in the vertical direction). Is possible). That is, since the resin layer above the piezoelectric element 46 is thinner, the effect of suppressing displacement inhibition is higher, so that the resin protective film 88 is not covered.

  The drive IC 60 is disposed outside the ink pool chamber 38 defined by the partition wall 42 and between the top plate 40 and the vibration plate 48 and is not exposed (does not protrude) from the vibration plate 48 or the top plate 40. It is said that. Therefore, it is possible to reduce the size of the inkjet recording head 32.

  The periphery of the drive IC 60 is sealed with a resin material 58. As shown in FIG. 10, a plurality of injection ports 40B for the resin material 58 for sealing the drive IC 60 are formed in a lattice shape so as to partition each inkjet recording head 32 in the top plate 40 in the manufacturing stage. After bonding (bonding) a piezoelectric element substrate 70 and a flow path substrate 72, which will be described later, the top plate 40 is cut along the injection port 40B sealed (closed) by the resin material 58, thereby forming a matrix. A plurality of inkjet recording heads 32 having the nozzles 56 (see FIG. 8) are manufactured at a time.

  Further, as shown in FIGS. 9 and 11, a plurality of bumps 62 protrude in a matrix shape at a predetermined height on the lower surface of the drive IC 60, and the piezoelectric element 46 is formed on the vibration plate 48. Flip chip mounting is performed on the metal wiring 86 of the element substrate 70. Therefore, high-density connection to the piezoelectric element 46 can be easily realized, and the height of the drive IC 60 can be reduced (thinner can be reduced). This also makes it possible to reduce the size of the inkjet recording head 32.

  In FIG. 8, bumps 64 are provided outside the driving IC 60. The bump 64 connects the metal wiring 90 provided on the top plate 40 and the metal wiring 86 provided on the piezoelectric element substrate 70, and of course, is higher than the height of the drive IC 60 mounted on the piezoelectric element substrate 70. It is provided to be higher.

  Accordingly, the metal wiring 90 of the top plate 40 is energized from the main body side of the ink jet recording apparatus 10, the metal wiring 86 is energized from the metal wiring 90 of the top plate 40 via the bumps 64, and then the drive IC 60 is energized. It is. The drive IC 60 applies a voltage to the piezoelectric element 46 at a predetermined timing, and the diaphragm 48 bends and deforms in the vertical direction, so that the ink 110 filled in the pressure chamber 50 is pressurized, and the nozzle In this configuration, ink droplets are ejected from 56.

  One nozzle 56 for ejecting ink droplets is provided at a predetermined position for each pressure chamber 50. The pressure chamber 50 and the ink pool chamber 38 avoid the piezoelectric element 46, and pass through the through-hole 48 </ b> A formed in the diaphragm 48, and from the pressure chamber 50 toward the horizontal direction in FIG. 9. The extended ink flow path 68 is connected by communicating. The ink flow path 68 is slightly smaller than the connection portion with the actual ink flow path 66 in advance so that alignment with the ink flow path 66 can be performed at the time of manufacturing the ink jet recording head 32 (so as to ensure communication). It is provided longer.

  Next, the manufacturing process of the inkjet recording head 32 configured as described above will be described in detail with reference to FIGS. As shown in FIG. 12, the ink jet recording head 32 is manufactured by separately preparing a piezoelectric element substrate 70 and a flow path substrate 72 and bonding (joining) the two. First, the manufacturing process of the piezoelectric element substrate 70 will be described. The top plate 40 is coupled (bonded) to the piezoelectric element substrate 70 before the flow path substrate 72.

  As shown in FIG. 13A, first, a glass first support substrate 76 having a plurality of through holes 76A is prepared. The first support substrate 76 may be anything as long as it does not bend, and is not limited to glass, but glass is preferable because it is hard and inexpensive. Known methods for producing the first support substrate 76 include femtosecond laser processing of a glass substrate, and exposure / development of a photosensitive glass substrate (for example, PEG3C manufactured by HOYA Corporation).

  Then, as shown in FIG. 13B, an adhesive 78 is applied to the upper surface (front surface) of the first support substrate 76, and as shown in FIG. 13C, the upper surface is made of metal (SUS or the like). The diaphragm 48 is adhered. At this time, the through hole 48A of the diaphragm 48 and the through hole 76A of the first support substrate 76 are not overlapped (not overlapped). Note that an insulating substrate such as glass may be used as the material of the diaphragm 48.

  Here, the through hole 48 </ b> A of the vibration plate 48 is used for forming the ink flow path 66. The reason why the through hole 76A is provided in the first support substrate 76 is that a chemical solution (solvent) is poured into the interface between the first support substrate 76 and the vibration plate 48 in the subsequent process. This is because the first support substrate 76 is peeled off from the diaphragm 48. Furthermore, various materials used during manufacture leak from the lower surface (back surface) of the first support substrate 76 so that the through holes 76A of the first support substrate 76 and the through holes 48A of the diaphragm 48 do not overlap. This is to prevent it from happening.

  Next, as shown in FIG. 13D, the lower electrode 52 laminated on the upper surface of the diaphragm 48 is patterned. Specifically, metal film sputtering (film thickness of 500 to 3000 mm), resist formation by photolithography, patterning (etching), and resist peeling by oxygen plasma. This lower electrode 52 becomes the ground potential.

Next, as shown in FIG. 13E, a resin layer is formed on the diaphragm 48 provided with the lower electrode 52 and patterned to form a resinous convex pattern 47. Next, the piezoelectric element 46 (PZT film) is formed on the convex pattern 47 formed on the vibration plate 200 and its non-formation region by a sputtering method or a Sol-Gel method. Then, as shown in FIG. 13F, patterning of the piezoelectric element 46 and film formation / patterning of the upper electrode 54 are performed. The piezoelectric element 46 is formed and patterned in accordance with the first to fifth reference examples . The same applies to the film formation and patterning of the upper electrode 54.

  Thereafter, as shown in FIG. 13G, a low water permeable insulating film (SiOx film) 80 is laminated on the upper surfaces of the lower electrode 52 and the upper electrode 54 exposed on the upper surface, and the low water permeable insulating film is further formed. A resin insulating film 82 having ink resistance and flexibility, for example, a polyimide-based, polyamide-based, epoxy-based, polyurethane-based, or silicon-based resin film is laminated on the upper surface of the (SiOx film) 80 and patterned. Thus, an opening 84 (contact hole) for connecting the piezoelectric element 46 and the metal wiring 86 is formed.

Specifically, a photosensitive polyimide (for example, a photosensitive polyimide manufactured by Fuji Film Arch Co., Ltd.) is used to deposit a low water-permeable insulating film (SiOx film) 80 having a high dangling bond density by the Chemical Vapor Deposition (CVD) method. Durimide 7520) is coated, exposed, and developed for patterning, and the reactive ion etching (RIE) method using CF ₄ gas is used to etch the SiOx film using the photosensitive polyimide as a mask. Although the SiOx film is used here as the low water permeable insulating film, it may be a SiNx film, a SiOxNy film, or the like.

  Next, as shown in FIG. 13H, a metal film is laminated on the upper electrode 54 and the resin insulating film 82 in the opening 84, and the metal wiring 86 is patterned. Specifically, an Al film (thickness 1 μm) is deposited by sputtering, a resist is formed by photolithography, an Al film is etched by RIE using a chlorine-based gas, and oxygen plasma is applied. Then, the process of peeling the resist film is performed to join the upper electrode 54 and the metal wiring 86 (Al film). Although not shown, an opening 84 is also provided on the lower electrode 52 and is connected to the metal wiring 86 in the same manner as the upper electrode 52.

  Further, as shown in FIG. 13I, a resin protective film 88 (for example, photosensitive polyimide Durimide 7320 manufactured by Fuji Film Arch Co., Ltd.) is laminated on the upper surfaces of the metal wiring 86 and the resin insulating film 82 and patterned. The resin protective film 88 is made of the same kind of resin material as the resin insulating film 82. At this time, the resin protective film 88 is not stacked above the piezoelectric element 46 in a portion where the metal wiring 86 is not patterned (only the resin insulating film 82 is stacked).

  Here, the fact that the resin protective film 88 is not laminated above the piezoelectric element 46 (the upper surface of the resin insulating film 82) prevents the displacement (vertical deformation) of the diaphragm 48 (piezoelectric element 46) from being hindered. This is to prevent it. Further, when the metal wiring 86 drawn out from the upper electrode 54 of the piezoelectric element 46 (connected to the upper electrode 54) is covered with a protective film 88 made of resin, the metal wiring 86 is laminated on the resin protective film 88. Since the resin insulating film 82 is made of the same kind of resin material, the bonding force covering the metal wiring 86 is strengthened, and corrosion of the metal wiring 86 due to the intrusion of the ink 110 from the interface can be prevented. .

  Since the resin protective film 88 is made of the same kind of resin material as the resin insulating film 82, the bonding force to the lower resin insulating film 82 is strong. Further, since the resin protective film 88 is made of the same kind of resin material as the partition wall 42 (photosensitive dry film 98), the bonding force to the partition wall 42 (photosensitive dry film 98) is also strong. Therefore, the ink 110 can be further prevented from entering from each interface, and ink leakage and metal wiring 86 erosion can be prevented. In addition, when the resin materials are made of the same kind as described above, the thermal expansion coefficients thereof are substantially equal, so that there is an advantage that the generation of thermal stress can be reduced.

  Next, as shown in FIG. 13J, the driving IC 60 is flip-chip mounted on the metal wiring 86 via the bumps 62. At this time, the drive IC 60 is processed to a predetermined thickness (70 μm to 300 μm) in a grinding process performed in advance at the end of the semiconductor wafer process. If the driving IC 60 is too thick, patterning of the partition walls 42 and formation of the bumps 64 may be difficult.

  As a method for forming the bump 62 for flip-chip mounting the drive IC 60 on the metal wiring 86, electroplating, electroless plating, ball bump, screen printing or the like can be applied. Thus, the piezoelectric element substrate 70 is manufactured, and the top plate 40 made of, for example, glass is bonded (bonded) to the piezoelectric element substrate 70. In the following FIG. 14, for convenience of explanation, the wiring formation surface is described as the lower surface, but in the actual process, the upper surface is the upper surface.

  In the production of the glass top plate 40, as shown in FIG. 14A, the top plate 40 itself has a thickness (0.3 mm to 1.5 mm) that can ensure the strength to be a support. There is no need to provide a separate support. First, as shown in FIG. 14B, the metal wiring 90 is laminated on the lower surface of the top plate 40 and patterned. Specifically, an Al film (thickness 1 μm) is deposited by sputtering, a resist is formed by photolithography, an Al film is etched by RIE using a chlorine-based gas, and oxygen plasma is applied. In this process, the resist film is removed.

  Then, as shown in FIG. 14C, a resin film 92 (for example, photosensitive polyimide Durimide 7320 manufactured by Fuji Film Arch Co., Ltd.) is laminated and patterned on the surface on which the metal wiring 90 is formed. At this time, the resin film 92 is not laminated in order to join the bumps 64 to some of the metal wirings 90.

Next, as shown in FIG. 14D, a resist is patterned by photolithography on the surface of the top plate 40 on which the metal wiring 90 is formed. The surface on which the metal wiring 90 is not formed is covered with a protective resist 94. Here, the reason why the protective resist 94 is applied is to prevent the top plate 40 from being etched from the back surface of the surface on which the metal wiring 90 is formed in the next wet (SiO ₂ ) etching step. In the case where photosensitive glass is used for the top plate 40, the step of applying the protective resist 94 can be omitted.

Next, as shown in FIG. 14E, the top plate 40 is subjected to wet (SiO ₂ ) etching using an HF solution, and then the protective resist 94 is peeled off by oxygen plasma. Then, as shown in FIG. 14F, a photosensitive dry film 96 (for example, Raytec FR-5025: 25 μm thickness manufactured by Hitachi Chemical Co., Ltd.) is exposed and developed on the opening 40A portion formed on the top plate 40. Pattern (build). This photosensitive dry film 96 becomes an air damper 44 that relieves pressure waves.

  Next, as shown in FIG. 14G, a photosensitive dry film 98 (100 μm thickness) is laminated on the resin film 92 and patterned by exposure and development. This photosensitive dry film 98 becomes a partition wall 42 that defines the ink pool chamber 38. The partition wall 42 is not limited to the photosensitive dry film 98, and may be a resin coating film (for example, SU-8 resist manufactured by Kayaku Microchem Corporation). At this time, it may be applied by a spray coating device, and then exposed and developed.

  Finally, as shown in FIG. 14H, bumps 64 are formed by plating or the like on the metal wiring 90 on which the resin film 92 is not laminated. Since the bumps 64 are electrically connected to the metal wiring 86 on the drive IC 60 side, the bumps 64 are formed to have a height higher than that of the photosensitive dry film 98 (partition wall 42) as shown in the figure.

  Thus, when the manufacture of the top plate 40 is completed, as shown in FIG. 15A, the top plate 40 is placed on the piezoelectric element substrate 70, and both are bonded (joined) by thermocompression bonding. That is, the photosensitive dry film 98 (the partition wall 42) is bonded to the resin protective film 88 that is a photosensitive resin layer, and the bumps 64 are bonded to the metal wiring 86.

  At this time, since the height of the bump 64 is higher than the height of the photosensitive dry film 98 (the partition wall 42), the bump 64 is formed by bonding the photosensitive dry film 98 (the partition wall 42) to the resin protective film 88. It is automatically joined to the metal wiring 86. That is, since the height of the solder bumps 64 can be easily adjusted (because they are easily crushed), the ink pool chamber 38 can be sealed with the photosensitive dry film 98 (the partition wall 42) and the bumps 64 can be easily connected.

  When the bonding between the partition wall 42 and the bump 64 is completed, a sealing resin material 58 (for example, epoxy resin) is injected into the drive IC 60 as shown in FIG. That is, the resin material 58 is poured from the inlet 40B (see FIG. 10) formed in the top plate 40. By injecting the resin material 58 and sealing the drive IC 60 in this way, the drive IC 60 can be protected from the external environment such as moisture, and the adhesive strength between the piezoelectric element substrate 70 and the top plate 40 can be improved. Can avoid damage in the subsequent process, for example, damage caused by water or a grinding piece when the completed piezoelectric element substrate 70 is divided into the ink jet recording heads 32 by dicing.

  Next, as shown in FIG. 15C, an adhesive stripping solution is injected from the through-hole 76A of the first support substrate 76 to selectively dissolve the adhesive 78, whereby the first support substrate 76 is removed. A peeling process is performed from the piezoelectric element substrate 70. Thereby, as shown in FIG. 15D, the piezoelectric element substrate 70 to which the top plate 40 is coupled (joined) is completed. From this state, the top plate 40 becomes a support for the piezoelectric element substrate 70.

  On the other hand, as shown in FIG. 16A, the flow path substrate 72 first prepares a second support substrate 100 made of glass having a plurality of through holes 100A. Similar to the first support substrate 76, the second support substrate 100 may be anything as long as it does not bend and is not limited to glass, but glass is preferable because it is hard and inexpensive. Known methods for producing the second support substrate 100 include femtosecond laser processing of a glass substrate and exposure / development of a photosensitive glass substrate (for example, PEG3C manufactured by HOYA Corporation).

  Then, as shown in FIG. 16B, an adhesive 104 is applied to the upper surface (front surface) of the second support substrate 100, and as shown in FIG. 16C, the resin substrate 102 is applied to the upper surface (front surface). (For example, an amide-imide substrate having a thickness of 0.1 mm to 0.5 mm) is bonded. Then, as shown in FIG. 16D, the upper surface of the resin substrate 102 is pressed against the mold 106 and subjected to a heating / pressurizing process. Thereafter, as shown in FIG. 16E, the mold 106 is released from the resin substrate 102, thereby completing the flow path substrate 72 in which the pressure chamber 50, the nozzle 56, and the like are formed.

  Thus, when the flow path substrate 72 is completed, as shown in FIG. 17A, the piezoelectric element substrate 70 and the flow path substrate 72 are bonded (joined) by thermocompression bonding. Then, as shown in FIG. 17B, an adhesive stripping solution is injected from the through-hole 100A of the second support substrate 100 to selectively dissolve the adhesive 104, thereby the second support substrate 100. Is peeled from the flow path substrate 72.

  Thereafter, as shown in FIG. 17C, the surface from which the second support substrate 100 has been peeled is subjected to a polishing process using an abrasive mainly composed of alumina or an RIE process using oxygen plasma, thereby The layer is removed and the nozzle 56 is opened. Then, as shown in FIG. 17D, the inkjet recording head 32 is formed by applying a fluorine material 108 (for example, Cytop manufactured by Asahi Glass Co., Ltd.) as a water repellent to the lower surface where the nozzle 56 is opened. When completed, as shown in FIG. 17E, the ink 110 can be filled into the ink pool chamber 38 or the pressure chamber 50.

  The photosensitive dry film 96 (air damper 44) is not limited to the one provided in the ink pool chamber 38 inside the top plate 40. For example, as shown in FIG. It is good also as a structure provided in. That is, the photosensitive dry film 96 (air damper 44) may be attached to the top plate 40 from the outside of the ink pool chamber 38 immediately before the ink 110 filling step.

  Next, the operation of the inkjet recording apparatus 10 including the inkjet recording head 32 manufactured as described above will be described. First, when an electrical signal instructing printing is sent to the inkjet recording apparatus 10, one sheet of recording paper P is picked up from the paper feed tray 26 and conveyed to a predetermined position by the sub-scanning mechanism 18.

  On the other hand, in the ink jet recording unit 30, the ink 110 has already been injected (filled) from the ink tank 34 into the ink pool chamber 38 of the ink jet recording head 32 via the ink supply port 36, and the ink 110 filled in the ink pool chamber 38 is The pressure chamber 50 is supplied (filled) through the ink flow paths 66 and 68. At this time, a meniscus in which the surface of the ink 110 is slightly recessed toward the pressure chamber 50 is formed at the tip (ejection port) of the nozzle 56.

  The ink jet recording head 32 mounted on the carriage 12 selectively ejects ink droplets from the plurality of nozzles 56 while moving in the main scanning direction, so that the image data is transferred to a predetermined band area of the recording paper P. Record part of the image based on. That is, a voltage is applied to a predetermined piezoelectric element 46 at a predetermined timing by the drive IC 60, and the vibration plate 48 is bent and deformed in the vertical direction (vibrated out of plane) to apply the ink 110 in the pressure chamber 50. And ejected as ink droplets from a predetermined nozzle 56.

  When a part of the image based on the image data is recorded on the recording paper P in this way, the recording paper P is conveyed by a predetermined pitch by the sub-scanning mechanism 18, and the ink jet recording head 32 is moved in the main scanning direction as described above. However, a part of the image based on the image data is recorded in the next band area of the recording paper P by selectively ejecting ink droplets selectively from the plurality of nozzles 56 again. Such an operation is repeated, and when the image based on the image data is completely recorded on the recording paper P, the sub-scanning mechanism 18 transports the recording paper P to the end, and the recording paper P is placed on the paper discharge tray 28. Is discharged. Thereby, the printing process (image recording) on the recording paper P is completed.

  Here, in the ink jet recording head 32, the ink pool chamber 38 is provided on the opposite side (upper side) of the pressure chamber 50 with the vibration plate 48 (piezoelectric element 46) interposed therebetween. In other words, the vibration plate 48 (piezoelectric element 46) is disposed between the ink pool chamber 38 and the pressure chamber 50, and the ink pool chamber 38 and the pressure chamber 50 are configured not to exist on the same horizontal plane. Therefore, the pressure chambers 50 are arranged close to each other, and the nozzles 56 are arranged with high density.

An ink pool chamber 38 is provided on the opposite side of the pressure chamber 50 with such a vibration plate 48 in between, and a piezoelectric element 46 is provided on the ink pool chamber 38 side with the vibration plate 48 in between to increase the density. By applying the first to fifth reference examples , the piezoelectric element 46 (PZT film) can be manufactured at low cost and with high quality while achieving both miniaturization appropriateness, high productivity, and damagelessness. A miniaturized piezoelectric element 46 is formed.

  As described above, the piezoelectric element substrate 70 and the flow path substrate 72 constituting the inkjet recording head 32 are always manufactured on the hard support substrates 76 and 100, respectively, and the support substrates 76 and 100 are not necessary in the manufacturing process. At this point, the manufacturing method in which the support substrates 76 and 100 are removed is adopted, so that the configuration is extremely easy to manufacture. Note that the manufactured (completed) inkjet recording head 32 is supported by the top plate 40 (since the top plate 40 is used as a support), and thus its rigidity is ensured.

  In addition, in the inkjet recording apparatus 10 of the above-described embodiment, the inkjet recording units 30 of black, yellow, magenta, and cyan are mounted on the carriage 12 and selectively selected from the inkjet recording heads 32 of these colors based on image data. Although ink droplets are ejected and a full-color image is recorded on the recording paper P, ink jet recording in the present invention is not limited to recording characters and images on the recording paper P.

  That is, the recording medium is not limited to paper, and the liquid to be ejected is not limited to ink. For example, industrially used liquids such as creating color filters for displays by discharging ink onto polymer films or glass, or forming bumps for component mounting by discharging welded solder onto a substrate The ink jet recording head 32 according to the present invention can be applied to all droplet ejecting apparatuses.

  In the ink jet recording apparatus 10 of the present embodiment, the example of the partial width array (PWA) having the main scanning mechanism 16 and the sub scanning mechanism 18 has been described. However, the ink jet recording in the present invention is not limited to this, and the paper width A corresponding so-called Full Width Array (FWA) may be used. Rather, since the present invention is effective for realizing a high-density nozzle arrangement, it is suitable for FWA that requires one-pass printing.

In the present embodiment, the embodiment in which the PZT film is applied as the functional film has been described. However, the present invention is not limited to this. For example, BaTiO ₃ (BTO), (Ba, Sr) TiO ₃ (BST), SrBi A difficult-to-etch material film such as ₂ Ta ₂ O ₉ (SBT), ZnO, or Ir can be suitably applied.

It is an explanatory view showing a step of a method for processing a functional film according to the first exemplary embodiment. It is an explanatory view showing a step of a method for processing a functional film according to the second embodiment. The third is an explanatory diagram showing a step working method for functional film according to the reference example. It is an explanatory view showing a step of a method for processing a functional film according to the fourth embodiment. It is an explanatory view showing a step of a method for processing a functional film according to the fifth embodiment. Schematic perspective view showing an inkjet recording apparatus according to a sixth embodiment of the present invention. Schematic perspective view showing an ink jet recording unit mounted on a carriage Schematic plan view showing the configuration of an ink jet recording head XX schematic cross-sectional view of FIG. Schematic plan view showing the top plate before being cut as an ink jet recording head Schematic plan view showing bumps of drive IC Explanatory drawing of the entire process for manufacturing an inkjet recording head Explanatory drawing which shows process (A)-(F) which manufactures a piezoelectric element board | substrate. Explanatory drawing which shows process (G)-(J) which manufactures a piezoelectric element board | substrate. Explanatory drawing which shows process (A)-(D) which manufactures a top plate Explanatory drawing which shows process (E)-(H) which manufactures a top plate Explanatory drawing which shows process (A)-(B) which joins a top plate to a piezoelectric element substrate Explanatory drawing which shows process (C)-(D) which joins a top plate to a piezoelectric element board | substrate. Explanatory drawing which shows the process of manufacturing a channel substrate Explanatory drawing which shows process (A)-(B) which joins a flow-path board | substrate to a piezoelectric element board | substrate. Explanatory drawing which shows process (C)-(E) which joins a flow-path board | substrate to a piezoelectric element board | substrate. Explanatory drawing which shows the inkjet recording head from which arrangement | positioning of an air damper differs

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Inkjet recording device 30 Inkjet recording unit 32 Inkjet recording head 36 Ink supply port 38 Ink pool chamber 40 Top plate 42 Partition 44 Air damper 46 Piezoelectric element 47 Convex pattern 48 Vibration plate 50 Pressure chamber 56 Nozzle 60 Drive IC
66 Ink channel 68 Ink channel 70 Piezoelectric element substrate 72 Channel substrate 76 First support substrate 80 Low water-permeable insulating film (protective film)
82 Resin insulation film (protective film)
88 Resin protective film (second resin insulation film)
86 Metal wiring 90 Metal wiring 100 Second support substrate 110 Ink 200 Diaphragm 202 Lower electrode 204 Convex pattern 206 PZT film (piezoelectric material film)
208 Metal film 210 Upper electrode 212 Photoresist

Claims (5)

Nozzles that eject ink drops;
A pressure chamber in communication with the nozzle and filled with ink;
A diaphragm constituting a part of the pressure chamber;
An ink pool chamber for pooling ink to be supplied to the pressure chamber via an ink flow path;
A piezoelectric element for displacing the diaphragm;
In the manufacturing method of the inkjet recording head having
A metal film forming step of forming a metal film on the diaphragm ;
Forming a convex pattern on the metal film;
The protruding pattern non-forming region on the protruding pattern and on the metal film on the metal film, a piezoelectric material film forming step of forming a piezoelectric material layer constituting the piezoelectric element,
A first polishing step of polishing the piezoelectric material layer formed on the protruding pattern to said convex pattern is out dew,
Have a second polishing step of polishing to smooth the piezoelectric material layer and said convex pattern of the protruding pattern non-forming region on the metal film,
The thickness of the piezoelectric material film on the non-convex pattern forming region on the metal film formed in the piezoelectric material film forming step is smaller than the thickness of the convex pattern on the metal film,
In the first polishing step, the polishing rate is faster than the second polishing step,
In the second polishing step, smoothing by polishing with an abrasive with particles having a smaller particle size than in the first polishing step so that the concave portions of the convex pattern non-formation region existing after the first polishing step are eliminated. A method of manufacturing an ink jet recording head. 2. The method of manufacturing an ink jet recording head according to claim 1 , wherein the material of the convex pattern is selected from a resin material and a glass material. The step of forming the convex pattern is a step of patterning a resin material by reactive ion etching using a resist formed by a photolithography method as a mask, or a step of patterning a photosensitive resin material by a photolithography method. The method of manufacturing an ink jet recording head according to claim 1 . After performing the first polishing step and the second polishing step, the manufacturing method of the ink jet recording head according to claim 1, characterized in that it comprises a convex pattern removing step of removing the protruding pattern. The method of manufacturing an ink jet recording head according to claim 1 , further comprising a crystallization step of crystallizing the piezoelectric material film.

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