JP4977230B2 - Etching method and apparatus - Google Patents

Etching method and apparatus Download PDF

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JP4977230B2
JP4977230B2 JP2010081063A JP2010081063A JP4977230B2 JP 4977230 B2 JP4977230 B2 JP 4977230B2 JP 2010081063 A JP2010081063 A JP 2010081063A JP 2010081063 A JP2010081063 A JP 2010081063A JP 4977230 B2 JP4977230 B2 JP 4977230B2
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etching
object
processed
semiconductor film
film
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JP2011216550A (en
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俊介 功刀
聡 真弓
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積水化学工業株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816Pressure
    • H01J37/32825Working under atmospheric pressure or higher
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

The present disclosures reduce process tact time and increase etching efficiency at channel portions and the like of a semiconductor device. An object (9) to be processed is conveyed continuously along a conveyance pathway (11) at a pressure in the vicinity of atmospheric pressure. At a position on the upstream end of the conveyance pathway (11), etching liquid is supplied to the object (9) to be process from a supply nozzle (21), and a metal film (97) is wet etched. Next, in a processing space (19) on the downstream end of the conveyance pathway (11), an etching gas containing a fluorine-based reaction component and an oxidative reaction component is caused to contact the surface of the object (9) to be processed, and a semiconductor film (94) is dry etched. The fluorine-based reaction component is generated by plasma at atmospheric pressure. In accordance with the conveyance speed of the object (9) to be processed, the etching rate is set in a manner so that the etching depth during the period that the object (9) to be processed is passing through the processing space (19) corresponds to the thickness of a film portion (96) that has been doped with an impurity.

Description

  The present invention relates to a method and apparatus for etching a film formed on a substrate when manufacturing a semiconductor device such as a flat panel display, and more particularly to an etching method suitable for channel etching of a switching element such as a TFT (Thin Film Transistor). And an apparatus.

  This type of semiconductor device is manufactured by repeating processes such as film formation, masking, etching, and mask removal (see Patent Document 1). Usually, only one or the same kind of film is etched in one etching step. However, for example, in the TFT channel etching process, the semiconductor film doped with impurities is etched following the etching of the metal film. The metal film is wet-etched using an acidic etching solution such as hydrochloric acid. The semiconductor film is dry-etched using, for example, a fluorine-based etching gas.

JP 2008-033337 A

  The dry etching of the semiconductor film in the conventional channel etching has been performed by RIE (Reactive Ion Etching) or vacuum plasma etching in a vacuum chamber. Therefore, it is necessary to store the substrate to be processed after wet etching of the metal film in a vacuum chamber and to evacuate the pressure in the vacuum chamber. Further, after the etching of the semiconductor film is completed, the pressure in the vacuum chamber is increased. After returning to atmospheric pressure, an operation to take out the substrate to be processed from the vacuum chamber was required, which was a batch process. Therefore, the processing tact has become long.

In order to solve the above-described problems, an etching method according to the present invention includes a semiconductor film and a metal film sequentially stacked on a substrate, and the metal of the object to be processed in which a film portion on the metal film side of the semiconductor film is doped with impurities. A method of etching a film and the semiconductor film,
A transporting process for continuously transporting the object to be processed along a transport path of pressure near atmospheric pressure;
A wet etching step of supplying an etching solution having solubility to a metal to the object to be processed at a wet etching position on the transport path;
After the wet etching step, an etching gas containing a fluorine-based reaction component and an oxidizing reaction component is applied to the surface of the object to be processed in a processing space that is separated from the wet etching position on the transfer path to the downstream side in the transfer direction. A dry etching process to contact,
Hints, the dry etching process, a raw material gas containing a fluorine-based ingredients into plasma under a pressure near atmospheric pressure to produce the fluorine-based reactive components, and the said object to be processed at a constant transport speed While transporting in a direction away from the wet etching position along the transport path, the etching depth during the period in which the object to be processed passes only once through the processing space according to the transport speed is the entire semiconductor film. The etching rate for the semiconductor film is set so as to be smaller than the thickness of the film and approximately equal to the thickness of the film portion doped with the impurity, and after the object to be processed passes through the processing space only once, it continues. wherein the said wet etching position than the processing space along an object to be processed to the transportation path, characterized that you conveyed to the opposite side Te.

The object to be processed passes through a position where the wet etching process is performed, that is, a position where the dry etching process is performed, that is, a processing space, by being continuously transported along the transport path. The pressure in the transport path is near atmospheric pressure. Therefore, the position of the wet etching process included in the transfer path and the pressure of the processing space are near atmospheric pressure.
When the object to be processed passes through the position where the wet etching process is performed, the etching solution is brought into contact with the metal film of the unmasked part (non-masked part) of the object to be processed, and the metal film is wet etched. Is done. As a result, the semiconductor film in the non-mask portion is exposed.
Subsequently, when the object to be processed passes through the processing space, an etching gas is brought into contact with the semiconductor film in the non-mask portion to cause an etching reaction. Specifically, silicon constituting the semiconductor film is oxidized by an oxidizing reaction component, and further converted into a volatile component such as SiF 4 by a fluorine-based reaction component. As a result, the non-masked semiconductor film is dry etched. Depending on the setting of the etching rate, when the workpiece passes through the processing space once, the film portion on the metal film side doped with impurities in the semiconductor film can be etched. The film portion on the substrate side that is not doped with impurities is left without being etched. Thereby, a channel part can be formed.

In an etching apparatus according to the present invention, a semiconductor film and a metal film are sequentially stacked on a substrate, and the metal film and the semiconductor film of an object to be processed are doped with impurities in a film portion of the semiconductor film on the metal film side. A device that performs
A transport mechanism for continuously transporting the object to be processed along a transport path of pressure near atmospheric pressure;
A wet etching unit that has a supply nozzle disposed on a transfer path of the transfer mechanism, and supplies an etching solution having solubility to metal from the supply nozzle to the surface of the object to be processed;
At least a pair of electrodes that form a discharge space near atmospheric pressure between each other, and an defining section that defines a processing space at a position farther downstream than the supply nozzle on the transport path, A raw material gas containing a system raw material component is introduced into the discharge space to generate a fluorine-based reaction component, and an etching gas containing the fluorine-based reaction component and an oxidizing reaction component is applied to the surface of the object to be processed in the processing space. An atmospheric pressure plasma etching portion to be contacted;
In the processing space, the transport mechanism transports the object to be processed in a direction away from the supply nozzle along the transport path at a constant transport speed, and according to the transport speed, the object to be processed The etching depth by the atmospheric pressure plasma etching portion during a period of passing through the processing space only once is smaller than the entire thickness of the semiconductor film and substantially equal to the thickness of the film portion doped with the impurity. After the etching rate for the semiconductor film is set and the object to be processed passes through the processing space only once, the transfer mechanism continues to move the object to be processed along the transfer path from the processing space. also from said feed nozzle and said that you conveyed to the opposite side.

The object to be processed is continuously conveyed by a conveyance mechanism along a conveyance path having a pressure near atmospheric pressure.
Then, first, the object to be processed passes through a position where the supply nozzle is arranged on the conveyance path. During this passage, the etching solution comes into contact with the metal film in the non-mask portion of the object to be processed to cause an etching reaction, and the metal film is wet etched under a pressure near atmospheric pressure. As a result, the semiconductor film in the non-mask portion is exposed.
The object to be processed continues to move along the transfer path and passes through the processing space of the atmospheric pressure plasma etching unit. The pressure in the transport path is near atmospheric pressure. Accordingly, the pressure in the processing space included in the transfer path is near atmospheric pressure. In the processing space, an etching gas is brought into contact with the non-mask portion of the semiconductor film to cause an etching reaction. Depending on the setting of the etching rate, when the workpiece passes through the processing space once, the film portion on the metal film side doped with impurities in the semiconductor film can be etched. The film portion on the substrate side that is not doped with impurities is left without being etched. Thereby, a channel part can be formed.
Preferably, the etching rate for the semiconductor film is set so that the etching depth during the period in which the object to be processed passes through the processing space is slightly greater than the thickness of the film portion doped with the impurity. . Therefore, when the dry etching process is completed, it is preferable that the film portion not doped with impurities is exposed in a partially etched state.
The semiconductor so that the etching depth during the period when the object to be processed passes through the processing space is slightly smaller than the thickness of the film portion doped with the impurity within a range not affecting the performance of the TFT. An etching rate for the film may be set. In that case, at the end of the dry etching process, a film portion doped with impurities is left slightly.

  In the etching method and the etching apparatus of the present invention, the dry etching of the semiconductor film is also performed on the transport path in the vicinity of the atmospheric pressure, similarly to the wet etching of the metal film. There is no need to transfer the object to be processed to the vacuum chamber for dry etching, and no transfer operation and pressure setting operation for the vacuum chamber are required, and batch processing can be avoided. Therefore, the processing tact can be shortened. Since a vacuum device such as a vacuum chamber and a transfer mechanism are unnecessary, the equipment can be simplified.

It is preferable to set the etching rate by adjusting the flow rate of the etching gas or the concentration of the fluorine-based reaction component or the oxidizing reaction component.
Increasing the flow rate of the etching gas can increase the etching rate. If the flow rate of the etching gas is reduced, the etching rate can be lowered. The etching rate can be increased by increasing the fluorine-based reactive component concentration or the oxidizing reactive component concentration in the etching gas. The etching rate can be lowered by reducing the fluorine-based reactive component concentration or the oxidizing reactive component concentration.

The plasma may be formed with at least a pair of electrodes, and the number of pairs of the electrodes may be adjusted so that the etching depth is substantially equal to the thickness of the film portion doped with the impurities. .
When the number of the electrode pairs is increased, the flow rate of the etching gas can be increased. Alternatively, the length of the processing space along the transfer path can be increased to increase the time during which the workpiece is in contact with the etching gas (the reaction time of the dry etching process). Therefore, the etching depth can be increased.
If the number of electrode pairs is reduced, the flow rate of the etching gas can be reduced. Alternatively, the reaction length of the dry etching process can be shortened by shortening the length of the processing space along the transfer path. Therefore, the etching depth can be reduced.

  The atmospheric pressure plasma etching section is preferably a so-called remote type plasma processing apparatus. That is, it is preferable that the discharge space is arranged away from the processing space, and the blow-out path extending from the discharge space reaches the surface of the defining unit facing the transport mechanism and continues to the processing space. Thereby, it can prevent that a to-be-processed object is damaged by the plasma electric field of discharge space. Remote plasma processing near atmospheric pressure tends to be isotropically etched, but by adjusting the amount of hydrogen-containing condensable component to be described later added to the source gas, the etching profile of the semiconductor film can be adjusted. Can be controlled.

  The atmospheric pressure plasma etching unit may be a so-called direct type plasma processing apparatus. That is, the discharge space formed between the electrodes may constitute the processing space, and the object to be processed may be passed through the discharge space (processing space).

Examples of the fluorine-based raw material component in the raw material gas include PFC (perfluorocarbon) and HFC (hydrofluorocarbon). Examples of PFC include CF 4 , C 2 F 6 , C 3 F 8 , C 3 F 8 and the like. Examples of HFC include CHF 3 , CH 2 F 2 , CH 3 F and the like. As the fluorine-based raw material component, fluorine-containing compounds other than PFC and HFC such as SF 6 , NF 3 , and XeF 2 may be used.

It is preferable that the source gas further contains a hydrogen-containing condensable component. Thereby, fluorine-type reaction components, such as hydrogen fluoride (HF), can be formed reliably in discharge space. The etching gas includes a hydrogen-containing condensable component that has not been decomposed in the discharge space in the source gas.
The hydrogen-containing condensable component is a component containing hydrogen and having condensability under dry etching temperature conditions and pressure conditions (near atmospheric pressure). Water (H 2 O) is preferably used as the hydrogen-containing condensable component. For example, water is vaporized using a humidifier or a vaporizer to form water vapor, and this water vapor is added to the raw material gas. As the hydrogen-containing condensable component, an OH-containing compound, hydrogen peroxide solution, or the like may be used instead of water. Examples of the OH-containing compound include alcohol.

Examples of the oxidizing reaction component in the etching gas include ozone (O 3 ), oxygen (O 2 ), oxygen radicals, H 2 O 2 , NO 2 , and N 2 O. More preferably, ozone is used as the oxidizing reaction component. For example, ozone may be generated by an ozonizer, and this ozone-containing gas may be mixed with an etching gas. Alternatively, ozone, oxygen radicals, and the like may be generated in the discharge space by including oxygen (O 2 ) in the source gas. Alternatively, oxygen gas is converted into plasma in a discharge space different from the discharge space for the source gas to generate ozone, oxygen radicals, etc., and the oxidizing reaction component-containing gas containing ozone, oxygen radicals, etc. is etched. You may mix with gas.

  It is preferable that the hydrogen-containing condensable component is water and the oxidizing reaction component is ozone.

  In the dry etching process, the etching gas stays at the corner of the etched portion of the semiconductor film. Therefore, if the etching gas contains a hydrogen-containing condensable component such as water, it tends to condense and accumulate in the corners. This condensed layer serves as a barrier to prevent an oxidative reaction component such as ozone from coming into contact with the edge of the etched portion of the semiconductor layer, thereby preventing the etching reaction at the edge. Therefore, the etching can be prevented from spreading in the side direction. Therefore, even in dry etching near atmospheric pressure, etching anisotropy can be secured and a good channel region can be formed.

The source gas may further contain a hydrogen-containing condensable component, and the etching profile of the semiconductor film may be controlled by adjusting the content of the hydrogen-containing condensable component in the source gas. It is preferable that the atmospheric pressure plasma etching unit further includes an adding means for adding a hydrogen-containing condensable component to the source gas. The etching profile of the semiconductor film may be controlled by adjusting the addition amount of the hydrogen-containing condensable component by the adding means.
By adjusting the content rate (or addition rate) of the hydrogen-containing condensable component in the etching gas, the shape of the edge of the etched portion can be controlled. That is, when the content rate (or addition rate) is increased, the amount of the condensed layer that accumulates at the edge of the etched portion increases. Therefore, the etching suppressing action is increased, and the edge portion of the etched portion can be smoothed. When the content rate (or addition rate) is reduced, the amount of the condensed layer accumulated at the edge of the etched portion is reduced. Therefore, the etching suppressing action is reduced, and the edge of the etched portion can be sharpened.

The fluorine-based raw material component is a hydrogen-free fluorine-based component that contains a fluorine atom and does not contain a hydrogen atom, and the source gas includes the hydrogen-free fluorine-based component, oxygen (O 2 ), and nitrogen It contains (N 2 ) and may not contain condensable hydrogen-containing components such as water. Examples of non-hydrogen-containing fluorine-based components include perfluorocarbons (PFC) such as CF 4 , C 2 F 6 , C 3 F 6 , and C 3 F 8 , as well as F 2 , SF 6 , NF 3 , and XeF 2. It is done.
In this case, an etching gas containing oxygen-containing fluorine-based reaction components and nitrogen oxide (NOx) and little or no HF can be generated by converting the raw material gas into plasma. Examples of the oxygen-containing fluorine-based reaction component include carbonyl difluoride (COF 2 ) and oxygen fluoride (OF 2 , O 2 F 2 ). Nitric oxide constitutes the oxidizing reaction component. The semiconductor film can be oxidized with nitrogen oxide, and further converted into a volatile component (SiF 4 ) with an oxygen-containing fluorine-based reaction component and etched.
For example, anhydrous hydrogen fluoride may be used as the etching gas component.

Here, the vicinity of atmospheric pressure refers to a range of 1.013 × 10 4 Pa to 50.663 × 10 4 Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration, 1.333 × 10 4. Pa~10.664 × 10 4 Pa, and more preferably from 9.331 × 10 4 Pa~10.397 × 10 4 Pa. The etching process is more preferably performed under atmospheric pressure.

  According to the present invention, for example, in channel etching of a semiconductor device, subsequent to wet etching of a metal film, a portion of a semiconductor film doped with impurities is dry-etched under the same pressure as that of the wet etching. it can. Etching of two different types of films can be performed sequentially along with the continuous conveyance of the workpiece. Therefore, the processing tact can be shortened.

It is a top view of the etching device concerning one embodiment of the present invention. It is side surface sectional drawing of the atmospheric pressure plasma etching part of the said etching apparatus which follows the II-II line | wire of FIG. It is sectional drawing which shows the manufacturing process of TFT of a semiconductor device in the state masked on the metal film. It is sectional drawing which shows the manufacturing process of TFT of a semiconductor device in the state which wet-etched the non-mask part of the said metal film. It is sectional drawing which shows the manufacturing process of TFT of a semiconductor device in the state which dry-etched the impurity doped semiconductor film. It is sectional drawing which shows an example of TFT of a semiconductor device. It is sectional drawing which expands and shows the corner part of the channel part at the time of the said dry etching. It is the photograph of the cross section of the channel part of TFT after a dry etching process.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
As shown in FIG. 4, a semiconductor device 90 made of, for example, a liquid crystal display panel includes a TFT as a switching element of each pixel. The TFT is configured by sequentially stacking a gate wiring 92, a gate insulating film 93, a semiconductor film 94, a signal wiring 97, a passivation film 98, and an electrode 99 on the substrate 91 of the semiconductor device 90 from the substrate 91 side. In the figure, the thickness of each of the layers 92 to 99 is exaggerated.

The substrate 91 is glass. Although the magnitude | size of the glass substrate 91 is about 2200 mm x 2500 mm, for example, it is not limited to this.
The gate wiring 92 is made of a metal such as Al, Cu, Cr, Ti, Mo, Ta, for example.
The gate insulating film 93 is made of, for example, SiN.

  The semiconductor film 94 is made of, for example, amorphous silicon. The thickness of the semiconductor film 94 is, for example, about 200 nm to 300 nm. The semiconductor film 94 includes a film portion 95 on the substrate 91 side and a film portion 96 on the signal wiring 97 side. The film portion 95 is undoped amorphous silicon that is not doped with impurities. The film portion 96 is n-type amorphous silicon doped with an impurity such as P. The film thickness of the n-type amorphous silicon 96 is, for example, about 60 nm to 100 nm.

The signal wiring 97 is made of a metal such as Al, Cu, Cr, Ti, Mo, or Ta.
The passivation film 98 is made of an insulator such as SiN.
The electrode 99 is made of, for example, ITO. The electrode 99 is electrically connected to the signal wiring 97 through a contact hole 99c integrated therewith.

  FIG. 3A shows the workpiece 9 to be the semiconductor device 90 in a state after the metal film to be the signal wiring 97 is formed and before the channel portion is formed. A mask made of a photoresist 8 is provided on the metal film 97. As shown in FIG. 3B, the metal film 97 in the non-mask portion is wet etched. Subsequently, as shown in FIG. 3C, the non-mask portion of the semiconductor film 94 is dry-etched.

As shown in FIG. 1, the above wet etching and dry etching are continuously performed by one etching apparatus 1.
The etching apparatus 1 includes a transport mechanism 10, a wet etching unit 20, and an atmospheric pressure plasma etching unit 30. The transport mechanism 10 is configured by, for example, a roller conveyor or a roller conveyor (illustrated for simplicity in FIG. 1). A plurality of objects to be processed 9 are continuously conveyed along the conveyance path 11 of the conveyance mechanism 10 at a constant interval. The conveyance speed is, for example, about 4 m / min, but is not limited thereto. The supply interval (tact) of the workpiece 9 to the transport mechanism 10 is, for example, about 45 seconds, but is not limited thereto.

  The transport path 11 of the transport mechanism 10 has an outward path 11a, an intermediate path 11b, and a return path 11c, and is generally U-shaped in plan view. The forward path 11a and the return path 11c extend in parallel to each other. The intermediate path 11b connects the downstream end of the forward path 11 and the upstream end of the return path 11c. The conveyance path 11 is not limited to the above, and the whole may extend linearly or may be curved.

In the etching apparatus 1, a wet etching position 12, a cleaning position 13, a liquid draining position 14, a dry etching position 15, a cleaning position 16, and a liquid draining position 17 are sequentially set from the upstream side along the transport path 11. A wet etching position 12 is disposed in the forward path 11a. A cleaning position 13 is disposed in the intermediate path 11b. In the return path 11c, a liquid draining position 14, a dry etching position 15, a cleaning position 16, and a liquid draining position 17 are sequentially arranged.
It suffices that the positions 12 to 17 are arranged in the above order, and it is possible to appropriately change which transport path portion 11a, 11b, and 11c the positions 12 to 17 are arranged.

  The etching apparatus 1 is disposed under a pressure near atmospheric pressure, and is preferably disposed under atmospheric pressure. Accordingly, the pressure at the transport path 11 and the above positions 12 to 17 is near atmospheric pressure, and preferably atmospheric pressure. The entire etching apparatus 1 may be accommodated in a clean room (chamber), and the pressure in the clean room may be adjusted within a range near atmospheric pressure.

  A wet etching portion 20 is provided at the wet etching position 12. The wet etching unit 20 includes a supply nozzle 21. The supply nozzle 21 is configured by, for example, a shower nozzle. The supply nozzle 21 is disposed downward above the transport mechanism 10. An etching solution from an etching solution supply source (not shown) is sent to the supply nozzle 21 and blown out from the supply nozzle 21 in a shower shape. The etching solution is soluble in metals, and for example, chemical solutions such as hydrochloric acid, sulfuric acid, and nitric acid are used.

  A cleaning nozzle 43 is provided at the cleaning position 13. The cleaning nozzle 43 is constituted by, for example, a shower nozzle. A cleaning nozzle 43 is disposed downward above the transport mechanism 10. The cleaning liquid is supplied to the cleaning nozzle 43 and blown out from the cleaning nozzle 43 like a shower. For example, water is used as the cleaning liquid.

  A liquid draining nozzle 54 is provided at the liquid draining position 14. The liquid cutting nozzle 54 is constituted by, for example, an air knife nozzle. The air knife nozzle 54 is disposed downward above the transport mechanism 10. The air knife nozzle 54 is inclined in plan view with respect to the processing width direction orthogonal to the transport direction at the liquid draining position 14. An air knife (high-pressure, high-speed strip-shaped air flow) is blown out from the nozzle 54.

  As shown in FIGS. 1 and 2, an atmospheric pressure plasma etching unit 30 is provided at the dry etching position 15. The atmospheric pressure plasma etching unit 30 includes a processing head 31 (defining unit). The processing head 31 is supported above the transport mechanism 10 by a gantry (not shown). A processing space 19 is defined between the bottom surface 31 a of the processing head 31 facing the transport mechanism 10 and the transport mechanism (roller conveyor) 10. The processing space 19 is included in the dry etching position 15. The pressure in the processing space 19 is near atmospheric pressure, and preferably atmospheric pressure.

  The processing head 31 includes one or a plurality of (two in the drawing) electrode units 32. When there are a plurality of electrode units 32, these electrode units 32 are arranged in the conveyance direction of the workpiece 9. Each electrode unit 32 has a pair of electrodes 33. Each electrode 33 extends in the processing width direction orthogonal to the transport direction at the dry etching position 15. The length of each electrode 33 in the processing width direction is substantially the same as or slightly larger than the dimension of the workpiece 9 in the same direction. A pair of electrodes 33 and 33 are arranged in parallel. A slit-shaped space 34 extending in the processing width direction is formed between the pair of electrodes 33 and 33. At the bottom of the processing head 31, a blowout path 35 that is continuous with the lower end of the interelectrode space 34 is formed. The blow-out path 35 forms a slit extending in the processing width direction, reaches the bottom surface 31 a of the processing head 31, and continues to the processing space 19. A solid dielectric layer (not shown) is provided on the opposing surface of at least one of the electrodes 33. One of the pair of electrodes 33, 33 constituting each electrode unit 32 is connected to a power source (not shown), and the other is electrically grounded. The power supply supplies, for example, pulsed power to the electrode 33. Thereby, an atmospheric pressure glow discharge is generated between the pair of electrodes 33 and 33, and the inter-electrode space 34 becomes a discharge space. The discharge space 34 is arranged away from the processing space 19 and continues to the processing space 19 through the blow-out path 35.

  A source gas supply source 2 is connected to the upper end of the inter-electrode space 34 of each electrode unit 32. The source gas contains a fluorine-based source component and a carrier component.

Here, CF 4 is used as the fluorine-based raw material component.
Instead of CF 4 , other PFC (perfluorocarbon) such as C 2 F 6 , C 3 F 8 , C 3 F 8 may be used as the fluorine-based raw material component, and CHF 3 , CH 2 F 2 , CH HFC (hydrofluorocarbon) such as 3 F may be used, and fluorine-containing compounds other than PFC and HFC such as SF 6 , NF 3 , and XeF 2 may be used.

  The carrier gas has a function as a dilution gas for diluting a fluorine-based raw material gas containing a fluorine-based raw material component and a function as a discharge gas for generating a stable plasma discharge in addition to the function of conveying the fluorine-based raw material component. ing. As the carrier gas, for example, a rare gas such as helium, argon, neon, or xenon, or an inert gas such as nitrogen is used. Here, argon is used as the carrier gas.

A hydrogen-containing condensable component is added to the fluorine-based source gas. As the hydrogen-containing condensable component, it is preferable to use water (H 2 O). Water is vaporized by the humidifier 3 (adding means) and added to the fluorine-based raw material gas.
In addition to water, the hydrogen-containing condensable component may be an OH group-containing compound, hydrogen peroxide solution, or a mixture thereof. Examples of the OH group-containing compound include alcohol.

By introducing a fluorine-based source gas (CF 4 + Ar + H 2 O) into the atmospheric pressure discharge space 34 between the electrodes, each gas component is converted into plasma (including decomposition, excitation, activation, and ionization) under atmospheric pressure. , Fluorine reaction components such as HF and COF 2 are generated. Examples of the fluorine-based reaction component include HF and COF 2 . COF 2 can be further converted to HF by reacting with the raw material water.

Further, an oxidizing reaction component supply source 4 is connected to the processing head 31. An ozonizer is used as the oxidizing reaction component supply source 4. The ozonizer 4 generates ozone (oxidative reaction component) using oxygen as a raw material. In the blowing path 35, the oxidizing reaction component-containing gas (O 2 + O 3 ) from the ozonizer 4 is merged with and mixed with the fluorine-based reaction component-containing gas from the discharge space 34. Thereby, an etching gas is generated. The etching gas contains a fluorine-based reaction component (HF or the like) and an oxidizing reaction component (O 3 or the like).

  Although not shown, the processing head 31 is provided with a suction unit that sucks the processed gas from the processing space 19 and discharges it. The suction port of the suction part is opened in the head bottom surface 31a.

  A cleaning nozzle 46 is provided at the cleaning position 16. The cleaning nozzle 46 is constituted by, for example, a shower nozzle. The cleaning liquid is supplied to the cleaning nozzle 46 and blown out from the cleaning nozzle 46 like a shower. For example, water is used as the cleaning liquid.

  A liquid cutting nozzle 57 is provided at the liquid cutting position 17. The liquid cutting nozzle 57 is composed of, for example, an air knife nozzle. The air knife nozzle 57 is disposed downward above the transport mechanism 10. The air knife nozzle 57 is inclined in plan view with respect to the processing width direction orthogonal to the transport direction at the liquid draining position 17. An air knife is blown out from the nozzle 57.

An etching method by the etching apparatus 1 having the above configuration will be described.
[Conveying process]
The objects 9 (FIG. 3A) in which the photoresist 8 is formed on the metal film 97 are sequentially supplied to the upstream end of the transport path 11 one by one at a predetermined interval. Each workpiece 9 is continuously transported along the transport path 11 by the transport mechanism 10 at a constant transport speed.

[Wet etching process]
Each workpiece 9 is first introduced into the wet etching position 12. At the wet etching position 12, the etching solution is blown out from the supply nozzle 21. This etching solution contacts the surface of the workpiece 9 passing through the wet etching position 12. As a result, the metal film 97 in the non-mask portion is wet etched, and the semiconductor film 94 is exposed (FIG. 3B). As exaggeratedly shown in FIG. 5, since the wet etching is isotropic etching, the metal film 97 tends to be etched deeper in the side direction than the edge of the mask 8.

[First cleaning step]
The workpiece 9 that has passed through the wet etching position 12 is sent to the cleaning position 13. At the cleaning position 13, cleaning water is blown out from the cleaning nozzle 43. The processing object 9 passing through the cleaning position 13 is cleaned with cleaning water, and the etching solution and etching residue are washed off from the surface of the processing object 9.

[First liquid draining step]
The workpiece 9 that has passed through the cleaning position 13 is sent to the liquid draining position 14. At the liquid cutting position 14, an air knife is blown out from the nozzle 54. Thereby, the cleaning water is removed from the surface of the workpiece 9.

[Dry etching process]
The workpiece 9 that has passed through the liquid draining position 14 is introduced into the dry etching position 15. At the dry etching position 15, a fluorine-based source gas (CF 4 + Ar + H 2 O) is supplied to the interelectrode space 34 of each electrode unit 32, and plasma discharge is performed in the interelectrode space 34 under a pressure near atmospheric pressure by applying an electric field. Generate. As a result, the fluorine-based source gas is turned into plasma, and a fluorine-based reaction component such as HF is generated. An ozone-containing gas (O 2 + O 3 ) from the ozonizer 4 is mixed with this fluorine-based reactive component-containing gas to generate an etching gas containing reactive components such as HF and O 3 . This etching gas is blown out from the blowing path 35 to the processing space 19. The etching gas contacts the surface of the workpiece 9 passing through the processing space 19. Thereby, an etching reaction of the semiconductor film 94 occurs. Specifically, the amorphous silicon constituting the non-masked portion of the semiconductor film 94 is oxidized by O 3 in the etching gas, and further reacted with HF to be converted into volatile SiF 4 .

In the dry etching step, the volume flow ratio between the fluorine-based raw material component (CF 4 ) and the carrier (Ar) is preferably about CF 4 : Ar = 5: 95 to 20:80. The dew point of the fluorine-based source gas (CF 4 + Ar + H 2 O) after water addition is preferably about 0 ° C. to 20 ° C. The volume flow ratio between the fluorine-based source gas (CF 4 + Ar + H 2 O) and the ozone-containing gas (O 2 + O 3 ) is about (CF 4 + Ar + H 2 O) :( O 2 + O 3 ) = 3: 1 to 1: 3. Is preferred. The temperature of the workpiece 9 is preferably about 10 ° C to 50 ° C. By setting these conditions, the etching rate of amorphous silicon can be made relatively high. Furthermore, the selectivity of amorphous silicon to SiN can be increased. Therefore, the SiN film 93 can be prevented from being etched during channel etching.

The dry etching process is performed while the workpiece 9 is transported by the transport mechanism 10. In accordance with the conveyance speed of the object 9 to be processed, the semiconductor film 94 is etched so that the etching depth of the semiconductor film 94 during the period in which the object 9 passes through the processing space 19 is substantially equal to the thickness of the impurity-doped semiconductor film 96. The etching rate for 94 is set. For example, the etching rate can be controlled by adjusting the flow rate of the etching gas or the concentration of reaction components (HF, O 3, etc.). Specifically, the etching with respect to the semiconductor film 94 is performed such that the etching depth of the semiconductor film 94 during the period in which the workpiece 9 passes through the processing space 19 is slightly greater than the thickness of the impurity-doped semiconductor film 96. Set the rate.
Note that the etching rate for the semiconductor film 94 may be set so that the etching depth is slightly smaller than the thickness of the impurity-doped semiconductor film 96 within a range that does not affect the performance of the TFT.

Increasing the flow rate of the etching gas can increase the etching rate, and decreasing the flow rate of the etching gas can decrease the etching rate.
Increasing the HF concentration or O 3 concentration of the etching gas can increase the etching rate, and decreasing the HF concentration or O 3 concentration can decrease the etching rate. The HF concentration of the etching gas can be controlled by adjusting the CF 4 concentration of the fluorine-based source gas, the addition flow rate of H 2 O, and the like. The O 3 concentration of the etching gas can be controlled by adjusting the mixing ratio of the ozone-containing gas (O 2 + O 3 ). The CF 4 concentration, the H 2 O addition flow rate, the mixing ratio of the ozone-containing gas (O 2 + O 3 ) and the like are preferably adjusted within the above-described preferred ranges.

Further, by increasing or decreasing the number of the electrode units 32 arranged in parallel, the etching depth of the semiconductor film 94 during the period in which the workpiece 9 passes through the processing space 19 becomes substantially equal to the thickness of the impurity-doped semiconductor film 96. May be.
When the number of electrode units 32 is increased, the flow rate of the etching gas can be increased. Alternatively, the size of the processing head 31 along the transfer path 11 can be increased, and the length of the processing space 19 along the transfer path 11 can be increased, thereby extending the dry etching reaction time.
When the number of electrode units 32 is reduced, the flow rate of the etching gas can be reduced. Alternatively, the dimension along the transfer path 11 of the processing head 31 can be reduced, so that the length of the process space 19 along the transfer path 11 can be shortened, and the reaction time of dry etching can be shortened.

Thereby, when the etching of the semiconductor film 94 reaches the vicinity of the boundary between the undoped semiconductor film 95 and the impurity-doped semiconductor film 96, the dry etching process can be completed. Therefore, the impurity-doped semiconductor film 96 can be removed, and the undoped semiconductor film 95 can be left without being etched. Thereby, the channel portion of the TFT can be formed.
Specifically, when the etching of the semiconductor film 94 slightly exceeds the boundary between the undoped semiconductor film 95 and the impurity-doped semiconductor film 96, the dry etching process can be completed. Therefore, the impurity-doped semiconductor film 96 can be completely removed, and the undoped semiconductor film 95 can be partially etched and exposed.

  Note that, as shown by a one-dot chain line in FIG. 5, when dry etching is performed by vacuum plasma, reactive ions are irradiated along the electric field, so that the edge portion 96 e of the etched portion of the semiconductor film 96 is formed on the resist 8. Located just below the edge. Accordingly, a step is formed between the edge 97 e of the metal film 97 and the edge 96 e of the semiconductor film 96.

  On the other hand, according to the dry etching in the vicinity of the atmospheric pressure by the apparatus 1, the etching gas is diffused even if the edge 97e of the metal film 97 is retracted from the resist 8 as shown by the solid line in FIG. Since the entire exposed surface of the semiconductor film 96 is in contact, the edge 96 e of the semiconductor film 96 continues to the edge 97 e of the metal film 97.

  Further, the etching gas stays around the edge 96e in the etched portion of the semiconductor film 96 (corner). Therefore, water in the etching gas is likely to condense. This condensed water w becomes a barrier and prevents ozone from coming into contact with the semiconductor layer 96. Therefore, etching of the semiconductor film 96 in the side direction can be suppressed, and the edge 96e can be prevented from being retracted deeper than the edge 97e of the metal film 97. Therefore, etching anisotropy can be secured and a good channel region can be formed. Furthermore, the etching profile of the semiconductor film 96 can be controlled by adjusting the amount of moisture in the etching gas. Specifically, the shape of the edge 96e can be controlled. That is, when the amount of water in the etching gas is increased, the amount of condensed water w is increased. Therefore, the effect of suppressing the etching of the edge portion 96e is increased. Therefore, as shown by a two-dot chain line in FIG. 5, the edge portion 96e can be made gentle. When the amount of water in the etching gas is reduced, the amount of condensed water w is reduced. For this reason, the etching suppressing action of the edge portion 96e is reduced. Therefore, as shown by a three-dot chain line in FIG. 5, the edge portion 96e can be made steep.

When the inventor dry-etched the amorphous silicon film of the TFT using the atmospheric pressure plasma etching portion 30 under the following conditions, the edge portion 96e of the P (phosphorus) -doped n-type amorphous silicon film 96 as shown in FIG. Can be formed into a gentle slope continuous with the edge of the metal film 97.
Fluorine source gas CF 4 : 1 slm
Ar: 16 slm
Dew point after addition of H 2 O: 16 ° C
Oxidizing reaction component-containing gas O 2 + O 3 : 10 slm
O 3 concentration: O 3 / (O 2 + O 3 ) = 10 vol%
Plasma condition Input power: 4kW
Applied voltage between electrodes: Vpp = 13 kV
Applied voltage frequency: 25 kHz
Gap between electrodes: 3mm
Substrate temperature: 25 ° C
Substrate size: 600mm x 700mm
Film thickness of non-doped amorphous silicon 95: 150 μm
Film thickness of P (phosphorus) doped n-type amorphous silicon 96: 50 μm
Conveying speed: 4 m / min.
Number of transfers: 1 time

[Second cleaning step]
The workpiece 9 that has passed through the dry etching position 15 is sent to the cleaning position 16. At the cleaning position 16, cleaning water is blown out from the cleaning nozzle 46. The processing object 9 passing through the dry etching position 15 is cleaned with cleaning water, and the etching residue generated in the dry etching process is washed off from the surface of the processing object 9.

[Second liquid draining step]
The workpiece 9 that has passed through the cleaning position 16 is sent to the liquid draining position 17. At the liquid draining position 17, an air knife is blown out from the nozzle 57. The cleaning water is removed from the surface of the workpiece 9 by this air knife.

According to the etching apparatus 1, the impurity-doped semiconductor film 96 can be dry-etched in the same pressure environment as the wet etching of the metal film 97. Accordingly, dry etching of the impurity-doped semiconductor film 96 can be performed on the transport path 11 following the wet etching of the metal film 97 while continuously transporting the workpiece 9. When performing the dry etching process, it is not necessary to transfer the workpiece 9 to the vacuum chamber and to reduce the internal pressure of the vacuum chamber to a vacuum, and the pressure in the vacuum chamber is set to atmospheric pressure after the dry etching process is completed. The work of returning and removing the workpiece 9 from the vacuum chamber is unnecessary, and batch processing can be avoided. Therefore, the processing tact can be shortened. Since a vacuum device such as a vacuum chamber and a transfer mechanism are unnecessary, the equipment can be simplified.
By providing the dry etching position 15 and the cleaning and draining positions 16 and 17 in the return path 11c of the transport mechanism 10, the empty space in the transport path 11 can be used effectively.

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, the application of the present invention is not limited to TFT channel etching as long as the metal film and the semiconductor film are continuously etched.
The electrode unit 32 may be disposed outside the processing head 31. The fluorine-based source gas may be converted to plasma at a location away from the processing head 31 and then conveyed to the processing head 31.
The electrode structure of the electrode unit 32 is not limited to a parallel plate electrode, but may be a coaxial cylindrical electrode, a pair of roll electrodes, or a pair of roll electrodes and flat plate electrodes or cylindrical concave electrodes.
The pressure in the discharge space 34 may be different from the pressure in the processing space 19 within a pressure range near atmospheric pressure. When the pressure in the discharge space 34 is lower than the pressure in the processing space 19, the etching gas may be increased by a pump and supplied to the processing space 19.
The source gas may not contain a condensable hydrogen-containing component such as water. The fluorine-based raw material component may be a hydrogen-free fluorine-based component such as water PFC, F 2 , SF 6 , NF 3 , or XeF 2 . Further, the source gas may contain the hydrogen-free fluorine-based component, oxygen (O 2 ), and nitrogen (N 2 ). In this case, reaction components such as NOx, COF 2 , OF 2 , and O 2 F 2 can be generated by converting the source gas into plasma in the discharge space 34. The n-type amorphous silicon film 96 can be oxidized with NOx and further etched with a fluorine-based reaction component such as COF 2 , OF 2 , or O 2 F 2 .
The atmospheric pressure plasma etching unit 30 is a so-called remote type plasma processing apparatus in which the workpiece 9 is disposed outside the discharge space 34 between the electrodes 33 and 33. , 33, and a so-called direct type plasma processing apparatus that directly irradiates the workpiece 9 with plasma by arranging the workpiece 9 between them. In the direct plasma processing apparatus, the discharge space becomes the processing space.
A plurality of pairs of electrodes may be installed, and the number of working electrode pairs may be adjusted according to the thickness of the impurity-doped semiconductor film 96.
The oxidizing reaction component supply source 4 may be an atmospheric pressure plasma apparatus that generates ozone by discharge using oxygen as a raw material, or may be an ozone gas cylinder that stores ozone generated in advance.
The substrate 91 is not limited to glass, and may be a semiconductor wafer, a resin film, or the like.
The transport mechanism is not limited to the roller conveyor, and may be a robot actuator, a moving stage, or the like.

  The present invention is applicable to the manufacture of semiconductor devices such as flat panel displays and semiconductor wafers.

DESCRIPTION OF SYMBOLS 1 Etching apparatus 2 Fluorine-type source gas supply source 3 Humidifier (means for adding hydrogen-containing condensable components)
4 Ozonizer (Oxidizing reactive gas supply source)
8 Photoresist (mask)
9 Workpiece 90 Semiconductor device 91 Substrate 92 Gate wiring 93 Gate insulating film 94 Semiconductor film 95 Undoped semiconductor film (film portion on substrate side)
96 Impurity doped semiconductor film (film part on the metal film side)
96e Edge 97 of etched portion Signal wiring (metal film)
98 Passivation film 99 ITO electrode 99c Contact hole portion w Condensed water 10 Transport mechanism 11 Transport path 11a Outward path 11b Intermediate path 11c Return path 12 Wet etching position 13 Washing position 14 Liquid draining position 15 Dry etching position 16 Cleaning position 17 Liquid draining position 19 Processing space 20 Wet etching part 21 Supply nozzle 43 Cleaning nozzle 54 Air knife nozzle 30 Atmospheric pressure plasma etching part 31 Processing head (definition part)
31a Bottom of processing head (surface facing transport mechanism)
32 Electrode unit (pair of electrodes)
33 Electrode 34 Discharge space 35 Blow-out path 46 Cleaning nozzle 57 Air knife nozzle

Claims (8)

  1. A method in which a semiconductor film and a metal film are sequentially stacked on a substrate, and the metal film and the semiconductor film of the object to be processed are doped with impurities in a film portion on the metal film side of the semiconductor film,
    A transporting process for continuously transporting the object to be processed along a transport path of pressure near atmospheric pressure;
    A wet etching step of supplying an etching solution having solubility to a metal to the object to be processed at a wet etching position on the transport path;
    After the wet etching step, an etching gas containing a fluorine-based reaction component and an oxidizing reaction component is applied to the surface of the object to be processed in a processing space that is separated from the wet etching position on the transfer path to the downstream side in the transfer direction. A dry etching process to contact,
    Hints, the dry etching process, a raw material gas containing a fluorine-based ingredients into plasma under a pressure near atmospheric pressure to produce the fluorine-based reactive components, and the said object to be processed at a constant transport speed While transporting in a direction away from the wet etching position along the transport path, the etching depth during the period in which the object to be processed passes only once through the processing space according to the transport speed is the entire semiconductor film. The etching rate for the semiconductor film is set so as to be smaller than the thickness of the film and approximately equal to the thickness of the film portion doped with the impurity, and after the object to be processed passes through the processing space only once, it continues. etching characterized that you conveyed to the opposite side of the wet etching position than the processing space along the object to be processed to the transportation path Te Law.
  2.   The etching method according to claim 1, wherein the etching rate is set by adjusting a flow rate of the etching gas or a concentration of the fluorine-based reaction component or the oxidizing reaction component.
  3.   The plasma is formed with at least a pair of electrodes, and the number of pairs of the electrodes is further adjusted so that the etching depth is substantially equal to the thickness of the film portion doped with the impurities. The etching method according to claim 1, wherein the etching method is characterized.
  4.   The etching profile of the semiconductor film is controlled by adjusting the content of the hydrogen-containing condensable component in the source gas, and the source gas further includes a hydrogen-containing condensable component. The etching method of any one of 1-3.
  5.   The etching method according to claim 4, wherein the hydrogen-containing condensable component is water and the oxidizing reaction component is ozone.
  6. An apparatus for sequentially etching a semiconductor film and a metal film on a substrate, and etching the metal film and the semiconductor film of an object to be processed in which impurities are doped in a film portion of the semiconductor film on the metal film side,
    A transport mechanism for continuously transporting the object to be processed along a transport path of pressure near atmospheric pressure;
    A wet etching unit that has a supply nozzle disposed on a transfer path of the transfer mechanism, and supplies an etching solution having solubility to metal from the supply nozzle to the surface of the object to be processed;
    At least a pair of electrodes that form a discharge space near atmospheric pressure between each other, and an defining section that defines a processing space at a position farther downstream than the supply nozzle on the transport path, A raw material gas containing a system raw material component is introduced into the discharge space to generate a fluorine-based reaction component, and an etching gas containing the fluorine-based reaction component and an oxidizing reaction component is applied to the surface of the object to be processed in the processing space. An atmospheric pressure plasma etching portion to be contacted;
    In the processing space, the transport mechanism transports the object to be processed in a direction away from the supply nozzle along the transport path at a constant transport speed, and according to the transport speed, the object to be processed The etching depth by the atmospheric pressure plasma etching portion during a period of passing through the processing space only once is smaller than the entire thickness of the semiconductor film and substantially equal to the thickness of the film portion doped with the impurity. After the etching rate for the semiconductor film is set and the object to be processed passes through the processing space only once, the transfer mechanism continues to move the object to be processed along the transfer path from the processing space. etching apparatus characterized that you conveyed to the opposite side also to the supply nozzle.
  7.   In the atmospheric pressure plasma etching unit, the discharge space is disposed away from the processing space, and a blow-out path extending from the discharge space reaches a surface of the defining unit facing the transport mechanism and continues to the processing space. The etching apparatus according to claim 6, wherein:
  8.   The atmospheric pressure plasma etching part further comprises an adding means for adding a hydrogen-containing condensable component to the source gas, and the etching profile of the semiconductor film is adjusted by adjusting the addition amount of the hydrogen-containing condensable component by the adding means. The etching apparatus according to claim 6, wherein the etching apparatus is controlled.
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