JP4964638B2 - LIGHTING DEVICE AND LIGHTING DEVICE MANUFACTURING METHOD - Google Patents

LIGHTING DEVICE AND LIGHTING DEVICE MANUFACTURING METHOD Download PDF

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JP4964638B2
JP4964638B2 JP2007077039A JP2007077039A JP4964638B2 JP 4964638 B2 JP4964638 B2 JP 4964638B2 JP 2007077039 A JP2007077039 A JP 2007077039A JP 2007077039 A JP2007077039 A JP 2007077039A JP 4964638 B2 JP4964638 B2 JP 4964638B2
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substrate
cover member
lighting device
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light leakage
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剛規 安田
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Showa Denko KK
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本発明は、照明装置及び照明装置の製造方法に関するものである。   The present invention relates to a lighting device and a method for manufacturing the lighting device.

従来、各種電球や放電管等の代替として、発光ダイオードを光源とする照明装置が開発されている。発光ダイオードは、消費電力に対する発光量が大きく、故障も少ないことから、家庭用のみならず、自動車用の光源としても広く検討されている。   2. Description of the Related Art Conventionally, lighting devices using light emitting diodes as light sources have been developed as alternatives to various light bulbs and discharge tubes. Light-emitting diodes are widely studied not only for home use but also for automobiles because they emit a large amount of light with respect to power consumption and have few failures.

例えば、下記特許文献１には、複数の発光ダイオードと、これら発光ダイオードが実装された実装基板と、カバープレートとから概略構成されてなる発光ダイオードランプ（照明装置）が開示されている。この照明装置における実装基板は、アルミニウム板と、アルミニウム板の一面上に形成された絶縁樹脂膜と、絶縁樹脂膜上に形成された銅箔からなる配線パターンとから構成されている。また、カバープレートは、アルミニウム板と、アルミニウム板の一面全面に形成された絶縁樹脂膜とから構成されている。また、カバープレートには、配線パターンを露出させる貫通孔が設けられており、この貫通孔は、カバープレートが実装基板に重ねられることによって配線パターンを露出させる凹部となる。この凹部の内部に発光ダイオードが収納されている。また凹部には、蛍光体入りの透明樹脂が充填されている。発光ダイオードとして青色発光ダイオードを用い、各凹部に充填される蛍光体として黄色蛍光体を用いることで、白色光を発光できるようになっている。
特願２００５−３６４３８８号公報 For example, Patent Document 1 below discloses a light-emitting diode lamp (illumination device) that is schematically configured by a plurality of light-emitting diodes, a mounting substrate on which these light-emitting diodes are mounted, and a cover plate. The mounting substrate in this lighting device is composed of an aluminum plate, an insulating resin film formed on one surface of the aluminum plate, and a wiring pattern made of copper foil formed on the insulating resin film. The cover plate is composed of an aluminum plate and an insulating resin film formed on the entire surface of the aluminum plate. Further, the cover plate is provided with a through hole that exposes the wiring pattern, and this through hole becomes a recess that exposes the wiring pattern when the cover plate is overlaid on the mounting substrate. A light emitting diode is accommodated in the recess. The concave portion is filled with a transparent resin containing a phosphor. By using a blue light emitting diode as the light emitting diode and using a yellow phosphor as the phosphor filled in each recess, white light can be emitted.
Japanese Patent Application No. 2005-364388

ところで従来から、照明装置を車両の前照灯等に用いる場合には、いわゆるロービームとハイビームの切り替え機構が必要になる。発光ダイオードを光源とする場合は、例えば、ロービーム用の発光ダイオードとハイビーム用の発光ダイオードとを用意し、各発光ダイオードをそれぞれ実装基板上に実装し、実装基板に積層するカバープレートにはロービーム用、ハイビーム用の各凹部を構成する２つの貫通孔を設け、各発光ダイオードを各凹部に配置させてなる照明装置を採用している。この照明装置では、各発光ダイオードに供給する電力を外部回路によってオンオフすることで、ロービームとハイビームの切り替え機構を実現している。   Conventionally, when the lighting device is used for a vehicle headlamp or the like, a so-called low beam and high beam switching mechanism is required. When a light emitting diode is used as a light source, for example, a low beam light emitting diode and a high beam light emitting diode are prepared, each light emitting diode is mounted on a mounting substrate, and a cover plate laminated on the mounting substrate is used for a low beam. A lighting device is employed in which two through-holes constituting each concave portion for high beam are provided and each light emitting diode is arranged in each concave portion. In this illuminating device, a switching mechanism between a low beam and a high beam is realized by turning on and off the power supplied to each light emitting diode by an external circuit.

しかし、上記構成の照明装置においては、ロービーム側の凹部とハイビーム側の凹部との間に隙間等が生じた場合に、例えばロービーム側の光がハイビーム側の凹部に洩れてしまい、この洩れた光によってハイビーム側の凹部内の黄色蛍光体が励起されて黄色光が発光され、この黄色光がロービーム側の光と混色してしまう虞があった。   However, in the illumination device having the above configuration, when a gap or the like is generated between the low beam side recess and the high beam side recess, for example, the low beam side light leaks into the high beam side recess, and this leaked light As a result, the yellow phosphor in the concave portion on the high beam side is excited to emit yellow light, and this yellow light may be mixed with the light on the low beam side.

本発明は、上記事情に鑑みてなされたものであって、複数の凹部に発光ダイオードがそれぞれ収納されてなる照明装置において、一の凹部から他の凹部に対する発光ダイオードの光洩れを防止することが可能な照明装置及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above circumstances, and in an illuminating device in which light emitting diodes are housed in a plurality of recesses, light leakage of the light emitting diodes from one recess to another recess can be prevented. It is an object of the present invention to provide a possible lighting device and a manufacturing method thereof.

上記の目的を達成するために、本発明は以下の構成を採用した。
［１］基板の一面上に複数の凹部が境界部を介して相互に隣接して設けられ、前記の各凹部には１以上の半導体発光素子がそれぞれ収納され、前記基板は、板状のカバー部材と絶縁性基板とが相互に積層されてなり、前記カバー部材には、前記の各凹部を構成する複数の貫通孔が設けられており、前記境界部には一の凹部内の前記半導体発光素子からの光が他の凹部内に洩れ出るのを防止する光洩防止部が形成されており、前記カバー部材の前記絶縁性基板側の面の前記の各貫通孔の間にはカバー側の光洩防止用金属箔が形成され、前記絶縁性基板の前記カバー部材側の面には、前記カバー側の光洩防止用金属箔に重なる基板側の光洩防止用金属箔が形成され、前記の各光洩防止用金属箔が相互に接合されることによって前記光洩防止部が形成され、前記絶縁性基板の前記カバー部材側の面には、前記半導体発光素子に接続される端子部と、前記端子部に接続される基板側配線部が形成され、前記カバー部材の前記絶縁性基板側の面には、前記基板側配線部に重なるカバー側配線部が形成され、前記基板側配線部と前記カバー側配線部とが接合されることにより、前記絶縁性基板と前記カバー部材とが相互に接合されていることを特徴とする照明装置。
［２］前記境界部の幅が１ｍｍ以下とされていることを特徴とする前項１に記載の照明装置。
［３］前記絶縁性基板及び前記カバー部材がアルミナから構成されるとともに、前記の各接合用金属パターンが銅から構成されていることを特徴とする前項１又は前項２のいずれかに記載の照明装置。
［４］蛍光体を含有する透明樹脂が前記凹部に充填されていることを特徴とする前項１乃至前項３のいずれかに記載の照明装置。
［５］前記凹部の内面に反射層が形成されていることを特徴とする前項１乃至前項４のいずれかに記載の照明装置。
［６］前記半導体発光素子がフリップチップ型発光ダイオードであることを特徴とする前項１乃至前項５のいずれかに記載の照明装置。
In order to achieve the above object, the present invention employs the following configuration.
[1] A plurality of recesses are provided on one surface of the substrate adjacent to each other via a boundary, and each of the recesses accommodates one or more semiconductor light emitting elements, and the substrate is a plate-shaped cover. A member and an insulating substrate are stacked on each other, the cover member is provided with a plurality of through-holes constituting the respective recesses, and the semiconductor light emission in one recess is formed at the boundary portion A light leakage prevention portion for preventing light from the element from leaking into the other recess is formed, and the cover member has a surface on the cover side between the through holes on the surface of the insulating substrate. A metal foil for light leakage prevention is formed, and a metal foil for light leakage prevention on the substrate side that overlaps the metal foil for light leakage prevention on the cover side is formed on the surface of the insulating substrate on the cover member side, The light leakage prevention portions are formed by joining the light leakage prevention metal foils to each other. And a terminal portion connected to the semiconductor light emitting element and a substrate side wiring portion connected to the terminal portion are formed on a surface of the insulating substrate on the cover member side, and the insulating property of the cover member A cover-side wiring portion that overlaps the substrate-side wiring portion is formed on the substrate-side surface, and the substrate-side wiring portion and the cover-side wiring portion are joined together, whereby the insulating substrate and the cover member are Are joined to each other .
[2] The illumination device according to [1], wherein a width of the boundary portion is 1 mm or less.
[3] The illumination according to any one of [1] and [2], wherein the insulating substrate and the cover member are made of alumina, and each of the bonding metal patterns is made of copper. apparatus.
[4] The illumination device according to any one of 1 to the preceding third transparent resin containing a fluorescent material is characterized in that it is filled in the recess.
[5] The illumination device according to any one of 1 to the item 4, wherein the reflective layer is formed on the inner surface of the recess.
[6] The illumination device according to any one of 1 to item 5, wherein the semiconductor light emitting element is characterized in that it is a flip-chip type light emitting diode.

本発明の照明装置によれば、複数の凹部を隔てる境界部に、光洩防止部が形成されているので、一の凹部に配置された半導体発光素子からの光が、隣接する他の凹部に洩れ出す虞がない。
また、本発明の照明装置によれば、絶縁性基板に基板側の光洩防止用金属箔が形成され、カバー部材の各貫通孔の間にはカバー側の光洩防止用金属箔が形成され、各光洩防止用金属箔が相互に接合されることによって、光漏防止部が形成されるとともに絶縁性基板とカバー部材とが接合されるので、境界部の強度を高めることができる。
また、本発明の照明装置によれば、基板側配線部とカバー側配線部とが接合されることにより、絶縁性基板とカバー部材とが相互に接合されるので、絶縁性基板とカバー部材とを締結材や接着剤等で接合する必要がなく、耐振動性及び耐熱性に優れた照明装置を構成できる。
また、本発明の照明装置によれば、凹部に蛍光体を含有する透明樹脂が充填されているので、例えば半導体発光素子を青色発光ダイオードで構成し、蛍光体を黄色蛍光体で構成することで、白色光を発光させることが可能になる。 According to the illuminating device of the present invention, the light leakage prevention part is formed at the boundary part that separates the plurality of concave parts, so that the light from the semiconductor light emitting element arranged in one concave part is incident on another adjacent concave part. There is no risk of leaking.
Further, according to the lighting device of the present invention, the light leakage prevention metal foil on the substrate side is formed on the insulating substrate, and the light leakage prevention metal foil on the cover side is formed between the through holes of the cover member. Since the light leakage preventing metal foils are bonded to each other, the light leakage preventing portion is formed and the insulating substrate and the cover member are bonded to each other, so that the strength of the boundary portion can be increased.
Further, according to the lighting device of the present invention, the insulating substrate and the cover member are bonded to each other by bonding the substrate side wiring portion and the cover side wiring portion, so that the insulating substrate and the cover member are bonded to each other. It is not necessary to join the two with a fastening material or an adhesive, and a lighting device having excellent vibration resistance and heat resistance can be configured.
Further, according to the illumination device of the present invention, since the concave portion is filled with the transparent resin containing the phosphor, for example, the semiconductor light emitting element is configured by a blue light emitting diode, and the phosphor is configured by a yellow phosphor. , White light can be emitted.

また、本発明の照明装置の製造方法によれば、絶縁性基板にカバー部材を重ねあわせ、基板側の光洩防止用金属箔とカバー側の光洩防止用金属箔とを相互に接合して光洩防止部を形成するので、一の凹部に配置された半導体発光素子からの光が、隣接する他の凹部に洩れ出す虞のない照明装置を製造することができる。   Further, according to the method for manufacturing the lighting device of the present invention, the cover member is overlapped on the insulating substrate, and the light leakage preventing metal foil on the substrate side and the light leakage preventing metal foil on the cover side are joined to each other. Since the light leakage prevention portion is formed, it is possible to manufacture an illumination device in which light from the semiconductor light emitting element disposed in one recess does not leak out to another adjacent recess.

以下、本発明の実施の形態について図面を参照して説明する。図１は、本実施形態の照明装置を示す平面模式図であり、図２は、図１のＡ−Ａ’線に対応する断面模式図であり、図３は、図２の拡大断面模式図である。また、図４は、図１のＢ−Ｂ’線に対応する拡大断面模式図である。更に図５（ａ）は照明装置を構成する絶縁性基板の平面模式図であり、図５（ｂ）は図５（ａ）のＣ−Ｃ’線に対応する拡大断面模式図である。
尚、これらの図は本実施形態の照明装置の構成を説明するためのものであり、図示される各部の大きさや厚さや寸法等は、実際の照明装置の寸法関係とは異なる場合がある。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing the illumination device of the present embodiment, FIG. 2 is a schematic cross-sectional view corresponding to the line AA ′ of FIG. 1, and FIG. 3 is an enlarged schematic cross-sectional view of FIG. It is. FIG. 4 is an enlarged schematic cross-sectional view corresponding to the line BB ′ of FIG. Further, FIG. 5A is a schematic plan view of an insulating substrate constituting the lighting device, and FIG. 5B is an enlarged schematic cross-sectional view corresponding to the line CC ′ in FIG.
In addition, these figures are for demonstrating the structure of the illuminating device of this embodiment, and the magnitude | size of each part shown, thickness, a dimension, etc. may differ from the dimensional relationship of an actual illuminating device.

図１〜図３に示すように、本実施形態の照明装置１は、絶縁性基板２とカバー部材３とが一体化されて複数の凹部４を有する基板５が形成され、この基板５の各凹部４に半導体発光素子６（以下、発光素子という）が収納されて構成されている。また、図２〜図５に示すように、絶縁性基板２上には配線パターン７が形成されており、この配線パターン７の上に発光素子６が実装されている。また、図１及び図４に示すように、各凹部４の間には境界部８が設けられており、この境界部８には光洩防止部９が形成されている。   As shown in FIGS. 1 to 3, in the lighting device 1 of the present embodiment, an insulating substrate 2 and a cover member 3 are integrated to form a substrate 5 having a plurality of recesses 4. A semiconductor light emitting element 6 (hereinafter referred to as a light emitting element) is housed in the recess 4. As shown in FIGS. 2 to 5, a wiring pattern 7 is formed on the insulating substrate 2, and the light emitting element 6 is mounted on the wiring pattern 7. As shown in FIGS. 1 and 4, a boundary portion 8 is provided between the concave portions 4, and a light leakage prevention portion 9 is formed in the boundary portion 8.

図２〜図５に示すように、絶縁性基板２は、アルミナ等の絶縁材料からなる板状の基板本体２１と、基板本体２１の配線パターン７側とは反対側の面２１ａの全面に形成された銅等からなる補強用の金属箔２２とから構成されている。補強用の金属箔２２の厚みは２５０μｍ程度であり、基板本体２１の裏打ち材として基板本体２１の抗折強度を高めて基板本体２１の破損を防止している。また、基板本体２１の一面２１ｂには銅箔等からなる複数の配線パターン７が形成されている。   As shown in FIGS. 2 to 5, the insulating substrate 2 is formed on the entire surface of a plate-like substrate body 21 made of an insulating material such as alumina and a surface 21 a opposite to the wiring pattern 7 side of the substrate body 21. And a reinforcing metal foil 22 made of copper or the like. The reinforcing metal foil 22 has a thickness of about 250 μm, and as a backing material for the substrate body 21, the bending strength of the substrate body 21 is increased to prevent the substrate body 21 from being damaged. A plurality of wiring patterns 7 made of copper foil or the like are formed on one surface 21b of the substrate body 21.

各配線パターン７は、補強用の金属箔２２と同様に、厚み２５０μｍ程度の銅箔等から構成されている。図５に示すように、各配線パターン７は相互に異なる形状に形成されているが、少なくとも、端子部７１と、各端子部７１に接続された基板側配線部７２とから構成されている。また、一部の基板側配線部７２には外部端子部７３が接続されている。
また、基板本体２１の一面２１ｂ上には、基板側の光洩防止用金属箔９１が形成されている。この光洩防止用金属箔９１は、配線パターン７と同様に厚み２５０μｍ程度の銅箔等から構成されている。この光洩防止用金属箔９１によって、端子部７１が２つの群に分割されている。ここで、光洩防止用金属箔９１によって分割された一方の端子部７１からなる群を第１端子群７１Ａと呼び、他方の端子部７１からなる群を第２端子群７１Ｂと呼ぶ。第１，第２端子群７１Ａ、７１Ｂにはそれぞれ、後述するように３個の発光素子６が実装できるようになっている。
また、光洩防止用金属箔９１は、平面視略竿状に形成されており、いずれの配線パターン７にも接続されておらず、独立した金属箔になっている。また、光洩防止用金属箔９１の形状は、後述するカバー側の光洩防止用金属箔とほぼ同じ形状にされている。
尚、端子部７１、基板側配線部７２及び外部端子部７３の形状は、図示した形状に限定されるものではなく、発光素子の配線回路を構成可能な形状であればどのような形状でもよい。また、後述するように、基板側配線部７２とカバー側配線部３４とが相互に熱圧着されて接合され、これにより絶縁性基板２とカバー部材３が一体化されるので、絶縁性基板２とカバー部材３との接合強度が低下しない程度に基板側配線部７２とカバー側配線部３４の形状を設計すればよい。 Each wiring pattern 7 is made of a copper foil or the like having a thickness of about 250 μm, like the reinforcing metal foil 22. As shown in FIG. 5, each wiring pattern 7 is formed in a different shape from each other, but includes at least a terminal portion 71 and a substrate-side wiring portion 72 connected to each terminal portion 71. Further, an external terminal portion 73 is connected to a part of the substrate side wiring portions 72.
Further, a light leakage preventing metal foil 91 on the substrate side is formed on one surface 21 b of the substrate body 21. The light leakage preventing metal foil 91 is made of a copper foil having a thickness of about 250 μm, like the wiring pattern 7. The terminal portion 71 is divided into two groups by the light leakage preventing metal foil 91. Here, a group composed of one terminal portion 71 divided by the light leakage preventing metal foil 91 is referred to as a first terminal group 71A, and a group composed of the other terminal portion 71 is referred to as a second terminal group 71B. Three light emitting elements 6 can be mounted on the first and second terminal groups 71A and 71B, respectively, as will be described later.
The light leakage preventing metal foil 91 is formed in a substantially bowl shape in plan view, and is not connected to any wiring pattern 7 but is an independent metal foil. The shape of the light leakage preventing metal foil 91 is substantially the same as the shape of the light leakage preventing metal foil on the cover side described later.
In addition, the shape of the terminal part 71, the board | substrate side wiring part 72, and the external terminal part 73 is not limited to the shape shown in figure, What kind of shape may be sufficient if it can comprise the wiring circuit of a light emitting element. . Further, as will be described later, the substrate-side wiring portion 72 and the cover-side wiring portion 34 are bonded by thermocompression to each other, whereby the insulating substrate 2 and the cover member 3 are integrated. What is necessary is just to design the shape of the board | substrate side wiring part 72 and the cover side wiring part 34 to such an extent that the joining strength with the cover member 3 does not fall.

次に図１〜図４に示すように、カバー部材３は、アルミナ等の絶縁材料からなる板状の基板本体３１（板状の絶縁体）と、基板本体３１の絶縁性基板２とは反対側の面３１ａの全面に形成された銅等からなる補強用の金属箔３２とから構成されている。補強用の金属箔３２は、絶縁性基板２の金属箔２２と同様に２５０μｍ程度の厚みを有しており、基板本体３１の裏打ち材として基板本体３１の抗折強度を高めて基板本体３１の破損を防止している。
また、基板本体３１には複数の貫通孔３３が設けられ、各貫通孔３３の間には貫通孔３３同士を隔てる境界部８が形成されている。この境界部８は、基板本体３１の一部を構成するものであって、貫通孔３３の開口に伴って形成されたものである。境界部８の幅ｗは、換言すると各貫通孔３３の間隔は１ｍｍ以下とされている。この境界部８の絶縁性基板側の面３１ｂには、カバー側の光洩防止用金属箔９２が形成されている。このカバー側の光洩防止用金属箔９２は、基板側の光洩防止用金属箔９１とほぼ同じ形に形成されている。
更に基板本体３１の絶縁性基板側の面３１ｂにはカバー側配線部３４が形成されている。このカバー側配線部３４は、基板側配線部７２と同様に厚み２５０μｍ程度の銅箔等から構成されている。そして、このカバー側配線部３４は、基板側配線部７２とほぼ同じ形に形成されている。
更に、基板本体３１には、外部端子用の貫通孔３５と、保護回路用の貫通孔３６が設けられている。 Next, as shown in FIGS. 1 to 4, the cover member 3 is opposite to the plate-like substrate body 31 (plate-like insulator) made of an insulating material such as alumina and the insulating substrate 2 of the substrate body 31. And a reinforcing metal foil 32 made of copper or the like formed on the entire surface 31a. The reinforcing metal foil 32 has a thickness of about 250 μm, like the metal foil 22 of the insulating substrate 2, and increases the bending strength of the substrate body 31 as a backing material of the substrate body 31 to increase the bending strength of the substrate body 31. Prevents damage.
The substrate body 31 is provided with a plurality of through holes 33, and a boundary portion 8 that separates the through holes 33 is formed between the through holes 33. The boundary 8 constitutes a part of the substrate body 31 and is formed along with the opening of the through hole 33. In other words, the width w of the boundary portion 8 is such that the interval between the through holes 33 is 1 mm or less. A cover-side metal foil 92 for preventing light leakage is formed on the surface 31b of the boundary portion 8 on the insulating substrate side. The light leakage preventing metal foil 92 on the cover side is formed in substantially the same shape as the light leakage preventing metal foil 91 on the substrate side.
Further, a cover-side wiring portion 34 is formed on the surface 31b of the substrate body 31 on the insulating substrate side. The cover side wiring part 34 is composed of a copper foil having a thickness of about 250 μm, like the substrate side wiring part 72. The cover side wiring part 34 is formed in substantially the same shape as the substrate side wiring part 72.
Further, the substrate body 31 is provided with a through hole 35 for an external terminal and a through hole 36 for a protection circuit.

そして図１〜図４に示すように、上記の絶縁性基板２とカバー部材３が一体化されて、照明装置１を構成する基板５が構成されている。この基板５の一面５ａには、貫通孔３３からなる凹部４が複数形成されている。各凹部４は、各貫通孔３３の一端側開口部３３ａが絶縁性基板２によって閉口されてなるものであり、各凹部４間は境界部８によって隔てられている。また、各凹部４には、第１端子群７１Ａ及び第２端子群７１Ｂが露出するようになっている。
また、境界部８においては、基板側の光洩防止用金属箔９１と、カバー部材側の光洩防止用金属箔９２とが相互に熱圧着されて接合されており、これにより境界部８に光洩防止部９が形成されている。
更に、基板側配線部７２とカバー側配線部３４とが相互に熱圧着されて接合されており、これにより絶縁性基板２とカバー部材３が、接着剤や締結材によらずに一体化されている。
更に、外部端子用の貫通孔３５及び保護回路用の貫通孔３６によって、絶縁性基板２上の外部端子部７３がそれぞれ基板５の一面５ａに露出されている。そして、保護回路用の貫通孔３６から露出した外部端子部７３には、図示しない静電耐圧用のツェナーダイオードが取り付けられている。 As shown in FIGS. 1 to 4, the insulating substrate 2 and the cover member 3 are integrated to form a substrate 5 that constitutes the lighting device 1. On one surface 5 a of the substrate 5, a plurality of recesses 4 including through holes 33 are formed. Each recess 4 is formed by closing one end side opening 33 a of each through-hole 33 by the insulating substrate 2, and each recess 4 is separated by a boundary portion 8. The first terminal group 71 </ b> A and the second terminal group 71 </ b> B are exposed in each recess 4.
Further, at the boundary portion 8, the light leakage preventing metal foil 91 on the substrate side and the light leakage preventing metal foil 92 on the cover member side are bonded by thermocompression to each other. A light leakage prevention portion 9 is formed.
Further, the substrate side wiring part 72 and the cover side wiring part 34 are bonded by thermocompression bonding to each other, whereby the insulating substrate 2 and the cover member 3 are integrated without using an adhesive or a fastening material. ing.
Further, the external terminal portions 73 on the insulating substrate 2 are exposed on the one surface 5 a of the substrate 5 by the through holes 35 for the external terminals and the through holes 36 for the protection circuit. A non-illustrated Zener diode for electrostatic withstand voltage is attached to the external terminal portion 73 exposed from the through hole 36 for the protection circuit.

次に、発光素子６は、例えばフリップチップ型の青色発光ダイオードにより構成されている。この発光素子６は、素子本体部６１と、素子本体部６１に設けられた正負極用の電極パッド６２から概略構成されている。そして、図３〜図４に示すように、各発光素子６は、配線パターン７の端子部７１に各電極パッド６２がそれぞれ接続された状態で凹部４の内部に収納されている。
また、凹部４の側壁面には、銀及びニッケルの積層膜からなる反射層４１が形成されており、この反射層４１によって、発光素子６の光を凹部４の外に効率良く出射できるようになっている。
更に、凹部４の内部には、黄色蛍光体入りの透明樹脂４２が充填されている。この黄色蛍光体入りの透明樹脂４２によって青色発光ダイオード（発光素子６）を埋め込むことで、青色発光ダイオードを点灯した際に、光の加色作用によって白色光を出射できるようになっている。 Next, the light emitting element 6 is constituted by, for example, a flip chip type blue light emitting diode. The light emitting element 6 is roughly composed of an element body 61 and positive and negative electrode pads 62 provided on the element body 61. As shown in FIGS. 3 to 4, each light emitting element 6 is accommodated in the recess 4 with each electrode pad 62 connected to the terminal portion 71 of the wiring pattern 7.
Further, a reflective layer 41 made of a laminated film of silver and nickel is formed on the side wall surface of the concave portion 4, so that the light of the light emitting element 6 can be efficiently emitted out of the concave portion 4 by the reflective layer 41. It has become.
Further, the concave portion 4 is filled with a transparent resin 42 containing a yellow phosphor. By embedding the blue light-emitting diode (light-emitting element 6) with the transparent resin 42 containing the yellow phosphor, white light can be emitted by the color-adding action of the light when the blue light-emitting diode is turned on.

次に、本実施形態の照明装置１を例えば車両の前照灯の光源として使用した場合について説明する。車両の前照灯には、いわゆるロービームとハイビームの切り替え機構が必要になる。本実施形態の照明装置１において、たとえば、一方の端子群７１Ａに接続された発光素子６Ａをロービーム用とし、他方の端子群７１Ｂに接続された発光素子６Ｂをハイビーム用とする。そして、ロービームの使用時には、ロービーム用の発光素子６Ａを点灯し、ハイビーム用の発光素子６Ｂは消灯する。また、ハイビームの使用時には、ハイビーム用の発光素子６Ｂを点灯し、ロービーム用の発光素子６Ａは消灯する。各発光素子６Ａ、６Ｂの点灯及び消灯は、照明装置１の外部に接続された図示略の切換回路によって各発光素子６Ａ、６Ｂのオンオフを制御することにより行う。以上のようにして、本実施形態の照明装置１を車両の前照灯の光源として使用することができる。   Next, the case where the illuminating device 1 of this embodiment is used, for example as a light source of the headlamp of a vehicle is demonstrated. A vehicle headlamp requires a so-called low beam and high beam switching mechanism. In the illuminating device 1 of the present embodiment, for example, the light emitting element 6A connected to one terminal group 71A is used for a low beam, and the light emitting element 6B connected to the other terminal group 71B is used for a high beam. When the low beam is used, the low beam light emitting element 6A is turned on and the high beam light emitting element 6B is turned off. When the high beam is used, the high beam light emitting element 6B is turned on and the low beam light emitting element 6A is turned off. The light emitting elements 6A and 6B are turned on and off by controlling on / off of the light emitting elements 6A and 6B by a switching circuit (not shown) connected to the outside of the lighting device 1. As described above, the illumination device 1 of the present embodiment can be used as a light source for a vehicle headlamp.

また、上記の照明装置１によれば、複数の凹部４を隔てる境界部８に光洩防止部９が形成されているので、一の凹部に配置された発光素子６からの光が、隣接する他の凹部に洩れ出す虞がない。これにより、例えばロービーム用の発光素子６Ａの光がハイビーム側の凹部に洩れ、ハイビーム側の凹部内の黄色蛍光体が励起されて黄色光が発光されてしまう虞がなく、ロービーム側の白色光に対する混色を防止することができる。
また、上記の照明装置１によれば、絶縁性基板２に基板側の光洩防止用金属箔９１が形成され、カバー部材３の各貫通孔３３の間にはカバー側の光洩防止用金属箔９２が形成され、各光洩防止用金属箔９１，９２が相互に接合されて光洩防止部９が形成されているので、境界部８において絶縁性基板２とカバー部材３との間で隙間が生じる虞がなく、一の凹部に配置された発光素子６からの光が、隣接する他の凹部に洩れ出す虞がない。
また、各光洩防止用金属箔９１，９２同士が接合されることによって、境界部８において絶縁性基板２とカバー部材３とが相互に接合されるので、境界部８の強度を高めることができる。 Moreover, according to said illuminating device 1, since the light leakage prevention part 9 is formed in the boundary part 8 which divides the several recessed part 4, the light from the light emitting element 6 arrange | positioned at one recessed part adjoins. There is no risk of leaking into other recesses. Thereby, for example, there is no possibility that light from the light emitting element 6A for low beam leaks into the concave portion on the high beam side and the yellow phosphor in the concave portion on the high beam side is excited to emit yellow light. Color mixing can be prevented.
Further, according to the lighting device 1, the light leakage preventing metal foil 91 on the substrate side is formed on the insulating substrate 2, and the light leakage preventing metal on the cover side is formed between the through holes 33 of the cover member 3. Since the foil 92 is formed and the light leakage preventing metal foils 91 and 92 are joined to each other to form the light leakage prevention portion 9, the boundary portion 8 is formed between the insulating substrate 2 and the cover member 3. There is no possibility that a gap is generated, and there is no possibility that light from the light emitting element 6 arranged in one concave portion leaks to another adjacent concave portion.
Moreover, since the insulating substrate 2 and the cover member 3 are joined to each other at the boundary portion 8 by joining the metal foils 91 and 92 for preventing light leakage, the strength of the boundary portion 8 can be increased. it can.

また、上記の照明装置１によれば、基板側配線部７２とカバー側配線部３４とが接合されることにより、絶縁性基板２とカバー部材３とが相互に接合されるので、絶縁性基板２とカバー部材３とを締結材や接着剤等で接合する必要がなく、耐振動性及び耐熱性に優れた照明装置１を構成できる。
また、上記の照明装置１によれば、凹部４に蛍光体を含有する透明樹脂４２が充填されているので、例えば発光素子６を青色発光ダイオードで構成し、蛍光体を黄色蛍光体で構成することで、白色光を発光させることができる。 Moreover, according to said illuminating device 1, since the board | substrate side wiring part 72 and the cover side wiring part 34 are joined, the insulating board | substrate 2 and the cover member 3 are joined mutually, Therefore, an insulating board | substrate It is not necessary to join 2 and the cover member 3 with a fastening material, an adhesive agent, etc., and the illuminating device 1 excellent in vibration resistance and heat resistance can be comprised.
Moreover, according to said illuminating device 1, since the recessed part 4 is filled with the transparent resin 42 containing a fluorescent substance, the light emitting element 6 is comprised with a blue light emitting diode, for example, and a fluorescent substance is comprised with a yellow fluorescent substance. Thus, white light can be emitted.

次に、上記の照明装置１の製造方法について図面を参照して説明する。図６は本実施形態の照明装置の製造方法を説明するための図であって、図６（ａ）はカバー部材を構成する板状の絶縁体の平面模式図であり、図６（ｂ）は図６（ａ）のＤ−Ｄ’線に対応する拡大断面模式図である。また、図７（ａ）は板状の絶縁体に貫通孔を設けた状態を示す平面模式図であり、図７（ｂ）は図７（ａ）のＥ−Ｅ’線に対応する拡大断面模式図であって貫通孔を形成する工程を示す工程図であり、図７（ｃ）は図７（ｂ）に示す工程の次工程を示す工程図である。
更に図８は、絶縁性基板にカバー部材を接合した状態を示す拡大断面模式図である。更にまた図９は、半導体発光素子を実装した状態を示す拡大断面模式図である。
尚、これらの図は図１〜図４と同様に、本実施形態の照明装置を説明するためのものであり、図示される各部の大きさや厚さや寸法等は、実際の照明装置の寸法関係とは異なる場合がある。 Next, the manufacturing method of said illuminating device 1 is demonstrated with reference to drawings. FIG. 6 is a view for explaining the method of manufacturing the lighting device according to the present embodiment. FIG. 6 (a) is a schematic plan view of a plate-like insulator constituting the cover member, and FIG. 6 (b). These are the expanded sectional schematic diagrams corresponding to the DD 'line of Fig.6 (a). FIG. 7A is a schematic plan view showing a state in which a through-hole is provided in a plate-like insulator, and FIG. 7B is an enlarged cross section corresponding to the line EE ′ in FIG. FIG. 7 is a schematic diagram illustrating a process of forming a through hole, and FIG. 7C is a process diagram illustrating a process subsequent to the process illustrated in FIG.
FIG. 8 is an enlarged schematic cross-sectional view showing a state where a cover member is bonded to an insulating substrate. FIG. 9 is an enlarged schematic cross-sectional view showing a state where the semiconductor light emitting element is mounted.
These drawings are for explaining the lighting device of the present embodiment, similarly to FIGS. 1 to 4, and the size, thickness, dimensions, etc. of each part shown in the figure are the dimensional relationships of the actual lighting device. May be different.

本実施形態の照明装置１の製造方法は、カバー部材形成工程と、絶縁性基板形成工程と、光洩防止部形成工程と、実装工程とから概略構成されている。以下、各工程について順次説明する。   The manufacturing method of the illuminating device 1 of this embodiment is roughly comprised from the cover member formation process, the insulating board | substrate formation process, the light leakage prevention part formation process, and the mounting process. Hereinafter, each process will be described sequentially.

まず、カバー部材形成工程では、アルミナ等の基板本体３１の両面全面に銅箔が積層されてなる積層板を用意する。次に、基板本体３１の一方の面３１ｂにある銅箔をエッチング等の手段でパターニングすることにより、図６（ａ）に示すような銅箔パターン３７及び光洩防止用金属箔９２を形成する。銅箔パターン３７の形状は、図５に示す絶縁性基板上の配線パターン７に対し、貫通孔３３、３５及び３６の形成予定領域を除いてほぼ同じ形状である。形成された銅箔パターン３７がカバー側配線部３４になる。また、図６（ｂ）に示すように、基板本体３１の他方の面３１ａにある銅箔についてもパターニングを行い、貫通孔３３、３５及び３６の形成予定領域にある銅箔を除去しておく。パターニングによって残された銅箔は、基板本体３１の補強用の金属箔３２になる。   First, in the cover member forming step, a laminated plate is prepared in which copper foil is laminated on the entire surface of the substrate body 31 such as alumina. Next, the copper foil on one surface 31b of the substrate body 31 is patterned by means such as etching to form a copper foil pattern 37 and a light leakage preventing metal foil 92 as shown in FIG. . The shape of the copper foil pattern 37 is substantially the same as that of the wiring pattern 7 on the insulating substrate shown in FIG. 5 except for the regions where the through holes 33, 35 and 36 are to be formed. The formed copper foil pattern 37 becomes the cover side wiring part 34. Further, as shown in FIG. 6B, the copper foil on the other surface 31a of the substrate body 31 is also patterned to remove the copper foil in the areas where the through holes 33, 35 and 36 are to be formed. . The copper foil left by the patterning becomes a reinforcing metal foil 32 for the substrate body 31.

次に、図７（ｂ）に示すように、レーザーカット法によって基板本体３１に貫通部３３ｂを設け、更に図７（ａ）及び図７（ｃ）に示すように貫通部３３ｂの内周面を機械研磨することによって貫通孔３３を形成する。貫通孔３３の形成手順と同様にして、基板本体３１に、外部端子用の貫通孔３５と保護回路用の貫通孔３６とを設ける。   Next, as shown in FIG. 7B, a through-hole 33b is provided in the substrate body 31 by a laser cutting method. Further, as shown in FIGS. 7A and 7C, the inner peripheral surface of the through-hole 33b. The through-hole 33 is formed by mechanical polishing. Similar to the procedure for forming the through hole 33, the substrate body 31 is provided with a through hole 35 for an external terminal and a through hole 36 for a protection circuit.

次に、絶縁性基板形成工程では、カバー部材形成工程と同様にして、アルミナ等の基板本体２１の両面全面に銅箔が積層されてなる積層板を用意する。次に、基板本体２１の一方の面２１ｂにある銅箔をエッチング等の手段でパターニングすることにより、配線パターン７及び光洩防止用金属箔９１を形成する。基板本体２１の他方の面２１ａにある銅箔はそのままにしておく。この銅箔は、基板本体２１の補強用の金属箔２２になる。このようにして、図５に示すような絶縁性基板２を形成する。   Next, in the insulating substrate forming step, a laminated plate in which copper foil is laminated on the entire surfaces of both sides of the substrate body 21 such as alumina is prepared in the same manner as in the cover member forming step. Next, the wiring pattern 7 and the light leakage preventing metal foil 91 are formed by patterning the copper foil on the one surface 21b of the substrate body 21 by means such as etching. The copper foil on the other surface 21a of the substrate body 21 is left as it is. This copper foil becomes a reinforcing metal foil 22 for the substrate body 21. In this way, the insulating substrate 2 as shown in FIG. 5 is formed.

次に、光洩防止部形成工程では、図８に示すように、絶縁性基板２にカバー部材３を重ねて熱圧着する。熱圧着は、絶縁性基板２及びカバー部材３を１０００℃以上に加熱した状態で、１．５ｋｇ／ｃｍ２〜３ｋｇ／ｃｍ２程度の圧力で絶縁性基板２及びカバー部材３を相互に圧着させる。
この熱圧着によって、カバー部材３の各貫通孔３３の一端側開口部３３ａが絶縁性基板２によって閉口されて凹部４が形成される。この凹部４には、絶縁性基板２の端子部７１が露出した状態になる。 Next, in the light leakage prevention part forming step, as shown in FIG. 8, the cover member 3 is stacked on the insulating substrate 2 and thermocompression bonded. Thermocompression bonding, in a state where the insulating substrate 2 and the cover member 3 is heated to above 1000 ° C., is crimped to each other insulating substrate 2 and the cover member 3 at 1.5kg / cm 2 ~3kg / cm 2 pressure of about .
By this thermocompression bonding, one end side opening 33 a of each through hole 33 of the cover member 3 is closed by the insulating substrate 2, and the recess 4 is formed. In the recess 4, the terminal portion 71 of the insulating substrate 2 is exposed.

また、この熱圧着によって、カバー部材側の光洩防止用金属箔９２と、基板側の光洩防止用金属箔９１とが接合される。これら光洩防止用金属箔９１、９２はいずれも銅から構成されており、１０００℃以上の温度では銅の表面に酸化銅が形成されるが、この酸化銅は金属銅に比べて融点が低くなっている。従って、光洩防止用金属箔９１、９２を１０００℃以上に加熱することによって、各光洩防止用金属箔９１、９２の表面に酸化銅からなる被膜が形成され、この酸化銅からなる被膜同士が溶融した状態になって光洩防止用金属箔９１、９２が相互に接合される。これにより光洩防止部９が形成される。
また、光洩防止用金属箔９１、９２と同様に、基板側配線部７２とカバー側配線部３４についても熱圧着により相互に接合される。
以上のようにして、絶縁性基板２とカバー部材３とが相互に接合されて基板５となる。 Further, by this thermocompression bonding, the light leakage preventing metal foil 92 on the cover member side and the light leakage preventing metal foil 91 on the substrate side are joined. These metal foils 91 and 92 for preventing light leakage are both made of copper, and copper oxide is formed on the surface of copper at a temperature of 1000 ° C. or higher. This copper oxide has a lower melting point than that of metal copper. It has become. Accordingly, by heating the light leakage preventing metal foils 91 and 92 to 1000 ° C. or more, a coating made of copper oxide is formed on the surface of each of the light leakage preventing metal foils 91 and 92, and the coatings made of copper oxides The metal foils 91 and 92 for preventing light leakage are joined to each other in a molten state. Thereby, the light leakage prevention part 9 is formed.
Similarly to the light leakage preventing metal foils 91 and 92, the substrate side wiring portion 72 and the cover side wiring portion 34 are also joined to each other by thermocompression bonding.
As described above, the insulating substrate 2 and the cover member 3 are bonded to each other to form the substrate 5.

最後に、実装工程では、凹部４に発光素子６を収納し、発光素子の正負極用の電極パッド６２を端子部７１に接続する。そして、凹部４に蛍光体入りの透明樹脂を充填する。
以上のようにして、図１〜図４に示すような照明装置１が製造される。 Finally, in the mounting process, the light emitting element 6 is housed in the recess 4, and the electrode pads 62 for the positive and negative electrodes of the light emitting element are connected to the terminal portion 71. Then, the concave portion 4 is filled with a transparent resin containing a phosphor.
As described above, the lighting device 1 as shown in FIGS. 1 to 4 is manufactured.

上記の照明装置１の製造方法によれば、絶縁性基板２にカバー部材３を重ねあわせ、基板側の光洩防止用金属箔９１とカバー側の光洩防止用金属箔９２とを相互に接合して光洩防止部９を形成するので、一の凹部に配置された発光素子からの光が、隣接する他の凹部に洩れ出す虞のない照明装置１を得ることができる。   According to the manufacturing method of the lighting device 1 described above, the cover member 3 is overlapped with the insulating substrate 2 and the light leakage preventing metal foil 91 on the substrate side and the light leakage preventing metal foil 92 on the cover side are joined to each other. Thus, since the light leakage prevention part 9 is formed, it is possible to obtain the illuminating device 1 in which light from the light emitting element arranged in one recess is not likely to leak into another adjacent recess.

図１は、本発明の実施形態である照明装置を示す平面模式図である。FIG. 1 is a schematic plan view showing an illumination device according to an embodiment of the present invention. 図２は、図１のＡ−Ａ’線に対応する断面模式図である。FIG. 2 is a schematic cross-sectional view corresponding to the line A-A ′ of FIG. 1. 図３は、図２の拡大断面模式図である。FIG. 3 is a schematic enlarged sectional view of FIG. 図４は、図１のＢ−Ｂ’線に対応する拡大断面模式図である。FIG. 4 is an enlarged schematic cross-sectional view corresponding to the line B-B ′ of FIG. 1. 図５は、本発明の実施形態である照明装置を説明するための図であって、（ａ）は絶縁性基板の平面模式図であり、（ｂ）は（ａ）のＣ−Ｃ’線に対応する拡大断面模式図である。5A and 5B are diagrams for explaining the lighting device according to the embodiment of the present invention, in which FIG. 5A is a schematic plan view of an insulating substrate, and FIG. 5B is a CC ′ line of FIG. FIG. 図６は、本発明の実施形態である照明装置の製造方法を説明するための図であって、（ａ）はカバー部材を構成する板状の絶縁体の平面模式図であり、（ｂ）は（ａ）のＤ−Ｄ’線に対応する拡大断面模式図である。FIG. 6 is a view for explaining a method of manufacturing the lighting device according to the embodiment of the present invention, wherein (a) is a schematic plan view of a plate-like insulator constituting the cover member, and (b). FIG. 4 is an enlarged schematic cross-sectional view corresponding to the line DD ′ in FIG. 図７は、本発明の実施形態である照明装置の製造方法を説明するための図であって、（ａ）は板状の絶縁体に貫通孔を設けた状態を示す平面模式図であり、（ｂ）は（ａ）のＥ−Ｅ’線に対応する拡大断面模式図であって貫通孔を形成する工程を示す工程図であり、（ｃ）は（ａ）のＥ−Ｅ’線に対応する拡大断面模式図であって（ｂ）に示す工程の次工程を示す工程図である。FIG. 7 is a diagram for explaining a method for manufacturing a lighting device according to an embodiment of the present invention, wherein (a) is a schematic plan view showing a state in which a through-hole is provided in a plate-like insulator, (B) is an enlarged cross-sectional schematic diagram corresponding to the EE 'line of (a), and is a process diagram showing a process of forming a through hole, and (c) is a EE' line of (a). It is a corresponding expanded cross-sectional schematic diagram, and is a process diagram showing the next process of the process shown in (b). 図８は、本発明の実施形態である照明装置の製造方法を説明するための図であって、絶縁性基板にカバー部材を接合した状態を示す拡大断面模式図である。FIG. 8 is a diagram for explaining the method for manufacturing the lighting device according to the embodiment of the present invention, and is an enlarged schematic cross-sectional view showing a state in which a cover member is bonded to an insulating substrate. 図９は、本発明の実施形態である照明装置の製造方法を説明するための図であって、半導体発光素子を実装した状態を示す拡大断面模式図である。FIG. 9 is a diagram for explaining a method for manufacturing the lighting device according to the embodiment of the present invention, and is an enlarged schematic cross-sectional view showing a state where a semiconductor light emitting element is mounted.

符号の説明Explanation of symbols

１…照明装置、２…絶縁性基板、３…カバー部材、４…凹部、５…基板、５ａ…一面、６…発光素子（半導体発光素子）、８…境界部、９…光洩防止部、２１ｂ…絶縁性基板のカバー部材側の面（絶縁性基板の一面）、３１…板状の絶縁体、３１ｂ…カバー部材の絶縁性基板側の面（絶縁体の一面）、３３…貫通孔、３３ａ…一端側開口部、３３ｂ…貫通部、３４…カバー側配線部、４１…反射層、４２…蛍光体を含有する透明樹脂、７１…端子部、７２…基板側配線部、９１…基板側の光洩防止用金属箔、９２…カバー側の光洩防止用金属箔   DESCRIPTION OF SYMBOLS 1 ... Illuminating device, 2 ... Insulating substrate, 3 ... Cover member, 4 ... Recessed part, 5 ... Substrate, 5a ... One side, 6 ... Light emitting element (semiconductor light emitting element), 8 ... Border part, 9 ... Light leakage prevention part, 21b ... the surface of the insulating substrate on the cover member side (one surface of the insulating substrate), 31 ... the plate-like insulator, 31b ... the surface of the cover member on the insulating substrate side (one surface of the insulator), 33 ... the through hole, 33a ... one end side opening, 33b ... penetrating part, 34 ... cover side wiring part, 41 ... reflection layer, 42 ... transparent resin containing phosphor, 71 ... terminal part, 72 ... substrate side wiring part, 91 ... substrate side Metal foil for preventing light leakage, 92 ... metal foil for preventing light leakage on the cover side

Claims (6)

基板の一面上に複数の凹部が境界部を介して相互に隣接して設けられ、前記の各凹部には１以上の半導体発光素子がそれぞれ収納され、前記基板は、板状のカバー部材と絶縁性基板とが相互に積層されてなり、前記カバー部材には、前記の各凹部を構成する複数の貫通孔が設けられており、
前記境界部には一の凹部内の前記半導体発光素子からの光が他の凹部内に洩れ出るのを防止する光洩防止部が形成されており、前記カバー部材の前記絶縁性基板側の面の前記の各貫通孔の間にはカバー側の光洩防止用金属箔が形成され、前記絶縁性基板の前記カバー部材側の面には、前記カバー側の光洩防止用金属箔に重なる基板側の光洩防止用金属箔が形成され、前記の各光洩防止用金属箔が相互に接合されることによって前記光洩防止部が形成され、
前記絶縁性基板の前記カバー部材側の面には、前記半導体発光素子に接続される端子部と、前記端子部に接続される基板側配線部が形成され、
前記カバー部材の前記絶縁性基板側の面には、前記基板側配線部に重なるカバー側配線部が形成され、
前記基板側配線部と前記カバー側配線部とが接合されることにより、前記絶縁性基板と前記カバー部材とが相互に接合されていることを特徴とする照明装置。 A plurality of recesses are provided adjacent to each other via a boundary portion on one surface of the substrate, and each of the recesses accommodates one or more semiconductor light emitting elements, and the substrate is insulated from the plate-shaped cover member. And a plurality of through-holes that constitute each of the recesses are provided in the cover member,
A light leakage prevention portion for preventing light from the semiconductor light emitting element in one recess from leaking into another recess is formed at the boundary portion, and the surface on the insulating substrate side of the cover member A metal foil for light leakage prevention on the cover side is formed between each of the through holes, and the substrate on the cover member side of the insulating substrate overlaps the metal foil for light leakage prevention on the cover side. The light leakage preventing metal foil is formed on the side, and the light leakage preventing portions are formed by bonding the light leakage preventing metal foils to each other.
On the surface of the insulating substrate on the cover member side, a terminal portion connected to the semiconductor light emitting element and a substrate side wiring portion connected to the terminal portion are formed,
A cover-side wiring portion that overlaps the substrate-side wiring portion is formed on the surface of the cover member on the insulating substrate side,
The lighting device , wherein the insulating substrate and the cover member are bonded to each other by bonding the substrate-side wiring portion and the cover-side wiring portion . 前記境界部の幅が１ｍｍ以下とされていることを特徴とする請求項１に記載の照明装置。   The lighting device according to claim 1, wherein a width of the boundary portion is 1 mm or less. 前記絶縁性基板及び前記カバー部材がアルミナから構成されるとともに、前記の各接合用金属パターンが銅から構成されていることを特徴とする請求項１又は請求項２のいずれかに記載の照明装置。 Wherein together with the insulating substrate and the cover member is composed of alumina, the lighting device according to claim 1 or claim 2 each bonding metal patterns of the is characterized by being composed of copper . 蛍光体を含有する透明樹脂が前記凹部に充填されていることを特徴とする請求項１乃至請求項３のいずれかに記載の照明装置。 Lighting device according to any one of claims 1 to 3, characterized in that the transparent resin containing a phosphor is filled in the recess. 前記凹部の内面に反射層が形成されていることを特徴とする請求項１乃至請求項４のいずれかに記載の照明装置。 Lighting device according to any one of claims 1 to 4, characterized in that the reflective layer is formed on the inner surface of the recess. 前記半導体発光素子がフリップチップ型発光ダイオードであることを特徴とする請求項１乃至請求項５のいずれかに記載の照明装置。 Lighting device according to any one of claims 1 to 5, wherein the semiconductor light emitting device is a flip-chip type light emitting diode.
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