JP4953578B2 - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
JP4953578B2
JP4953578B2 JP2005042533A JP2005042533A JP4953578B2 JP 4953578 B2 JP4953578 B2 JP 4953578B2 JP 2005042533 A JP2005042533 A JP 2005042533A JP 2005042533 A JP2005042533 A JP 2005042533A JP 4953578 B2 JP4953578 B2 JP 4953578B2
Authority
JP
Japan
Prior art keywords
light emitting
phosphor
sealing resin
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2005042533A
Other languages
Japanese (ja)
Other versions
JP2006229054A (en
Inventor
倫英 三木
良平 山下
研二 滝根
Original Assignee
日亜化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日亜化学工業株式会社 filed Critical 日亜化学工業株式会社
Priority to JP2005042533A priority Critical patent/JP4953578B2/en
Priority claimed from TW95105503A external-priority patent/TWI419375B/en
Publication of JP2006229054A publication Critical patent/JP2006229054A/en
Application granted granted Critical
Publication of JP4953578B2 publication Critical patent/JP4953578B2/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Description

  The present invention relates to a light emitting device capable of emitting various colors by a combination of a light emitting diode and a phosphor, and more particularly to a light emitting device including a lens for controlling light distribution characteristics.

  A light-emitting device using a light-emitting diode is usually configured by mounting a light-emitting diode on a substrate having positive and negative electrodes and covering the periphery of the light-emitting diode with a translucent sealing resin. In addition, light distribution characteristics of a light-emitting device are controlled by forming a lens over a light-transmitting sealing resin.

In order to form a lens on a translucent sealing resin, for example, the following method can be used.
(1) A sealing resin is molded into a lens shape by resin molding.
(2) After forming the sealing resin into a flat plate shape, it is molded into a lens shape by machining.
(3) Adhering a separately molded lens to the surface of the sealing resin.
(4) Casting case method

  Among them, a method of molding a sealing resin into a lens shape is widely used because it is simple and excellent in mass productivity. As a resin molding method, it is common to use a transfer molding method widely used for a semiconductor chip sealing resin (for example, Patent Documents 1 and 2).

  The lens molding by the transfer molding method is performed as follows, for example. First, as shown in FIG. 10, the upper and lower sides of the substrate 2 on which the light emitting diode 8 is mounted are sandwiched between transfer mold dies 16 and 18. Then, as shown in FIG. 10, the thermosetting resin 14 is injected from an injection port 18 a formed between the upper mold 18 and the substrate 2. Here, the thermosetting resin to be injected is made into a semi-molten state by high-frequency heating or the like after being molded into a tablet shape, and is put into the pot portion 18b of the mold. The molds 16 and 18 are heated to a high temperature of about 170 ° C., and the charged resin 14 starts melting from the surface in contact with the mold. The resin 14 flows into the cavity between the mold 16 and the substrate 2 by applying pressure from the upper portion of the pot portion with the plunger 20. Since the resin 14 flows into the cavity at a relatively slow speed, the wire 10 and the like are not easily damaged.

  On the other hand, in recent years, blue light emitting LEDs using nitride semiconductors have been developed. By combining phosphors that absorb part of the light output from the light emitting diodes and convert them to different wavelengths, various emission colors can be obtained. A light emitting device can be manufactured. In particular, if the phosphor absorbs part of the light emitted from the blue light-emitting diode and converts it into a blue complementary color, a light-emitting device that emits white light can be obtained.

In such a light emitting device in which a light emitting diode and a phosphor are combined, color unevenness in which the color tone varies depending on the observation direction is often a problem. This color unevenness is caused by the amount of the phosphor existing on the light emission passage path from the light emitting diode depending on the observation direction. Therefore, in order to suppress color unevenness due to the observation direction, it is preferable to distribute the phosphor in the vicinity of the light emitting diode. For this reason, conventionally, a method has been adopted in which a light-emitting diode is surrounded by a concave cup, and a resin in which a phosphor is dispersed is filled only in the cup, and then the whole is covered with a sealing resin molded into a lens shape (Patent Literature 3), after a resin in which a phosphor is dispersed only around the light emitting diode is dropped and cured, the whole is covered with a sealing resin molded into a lens shape (Patent Document 4 or the like).
JP 2000-196000 A JP 2001-352105 A Japanese Patent Laid-Open No. 10-242513 JP 2000-315824 A

  However, in the conventional method described above, in order to distribute the phosphor in the vicinity of the light emitting diode, a resin layer (phosphor-containing layer) forming process including the phosphor and a lens-shaped resin layer (lens not including the phosphor) are formed. There are problems in that the manufacturing process is complicated because two processes including the layer) forming process are required.

  Further, when the phosphor-containing layer and the lens layer are formed in separate steps, organic substances, moisture and the like are easily adsorbed on the surface of the phosphor-containing layer before the lens layer forming step. Then, contamination such as organic matter or moisture is taken in a position near the light emitting diode inside the sealing resin, and the deterioration of the light emitting diode or the phosphor is likely to proceed and the life characteristics are deteriorated. Further, moisture taken into the interface between the phosphor layer and the lens layer may cause a water vapor explosion during reflow mounting, which may cause problems such as peeling of the interface and non-lighting.

  In addition, when the phosphor-containing layer and the lens layer are made of different materials, a difference in refractive index occurs at the interface, leading to a decrease in luminous efficiency. Even if the phosphor layer and the lens layer are made of the same material, once the surface of the phosphor layer is cured and then the lens layer is formed, there is a slight difference in refractive index at the interface between the two. Can occur.

  Therefore, the present invention is a light-emitting device having a lens for controlling light distribution and having phosphors dispersed in the vicinity of the light-emitting diode, which is easy to manufacture and does not easily take in contamination into the sealing resin. An object is to provide an apparatus.

In order to achieve the above object, a light emitting device of the present invention includes a substrate, a positive electrode and a negative electrode formed on the substrate, a light emitting diode connected to the positive electrode and the negative electrode, and the light emitting diode. and a sealing resin covering, said a phosphor that converts to a longer wavelength by absorbing at least a portion of the light-emitting diode, the light emitting diode and / or a convex lens for changing the light distribution direction of light emission of the phosphor, A light emitting device comprising:
The sealing resin is a thermosetting resin, wherein contains a phosphor, and a flat portion formed on both side of the lens-shaped portion and the lens-like portions constituting the convex lens at least one of the cross And is integrally molded by resin molding ,
The phosphor is denser in the vicinity of the surface of the sealing resin and in the vicinity of the surface of the light emitting diode than in the flat portion due to the precipitation of the phosphor during the molding of the sealing resin into a convex lens shape. It is distributed.

In the light emitting device according to the present invention, the sealing resin in which the phosphor is dispersed constitutes a lens for light distribution control , and the phosphor settles during the molding of the sealing resin. Compared with the vicinity of the surface of the LED and the flat portions on both sides of the lens , there is a feature in that the phosphor is distributed at a high density near the surface of the light emitting diode . As a result, it is possible to disperse the phosphor in the vicinity of the light emitting diode and form a lens for controlling the light distribution of the light emitting device in a single process. Further, since the sealing resin layer of the light emitting diode is formed at a time without being cured in the middle, moisture and organic substances are hardly taken into the sealing resin. Furthermore, since there is no extra refractive index interface from the light emitting diode or phosphor to the lens, highly efficient light emission can be extracted.

  In the present invention, the sealing resin layer in which the phosphor is dispersed is preferably molded into a lens shape by a compression molding method. According to the compression molding method, since the uniformly applied sealing resin can be cured while being compressed with a mold, the viscosity before curing is 5000 mPa · s or less at room temperature, particularly 300 mPa · s or more and 2000 mPa · s or less. It is possible to form a desired lens using such a low-viscosity thermosetting resin or a thermosetting resin in which the viscosity once decreases and the viscosity increases again as the temperature increases during curing. By using a thermosetting resin having a low initial viscosity or a thermosetting resin that once decreases in viscosity at the time of curing, the phosphor in the sealing resin is allowed to settle before or during the curing, and the phosphor is removed from the light emitting diode. It can be distributed in the vicinity. In addition, since the shape is determined by the mold, a lens having a desired lens diameter and curvature radius can be formed. That is, by forming the sealing resin layer once, it is possible to simultaneously arrange the phosphor in the vicinity of the light emitting diode and form a lens having desired characteristics.

  On the other hand, conventionally, the arrangement of the phosphor in the vicinity of the light emitting diode and the formation of the lens having the desired characteristics have not been performed at the same time, and it has been difficult to perform them simultaneously. That is, when the sealing resin is molded into a lens shape by the transfer molding method as in Patent Document 1 and Patent Document 2, the resin flow in the mold cannot be controlled unless the viscosity of the sealing resin is high to some extent. Defects such as voids are likely to occur. For this reason, even if the phosphor is dispersed in the sealing resin molded into a lens shape, the phosphor hardly settles in the sealing resin injected into the mold. Therefore, although a desired lens shape can be realized by the mold, the phosphor is distributed throughout the sealing resin, and color unevenness due to the observation direction is strongly generated.

  In addition, as in Patent Document 4, when a sealing resin having a low viscosity is dropped on the light emitting diode and cured, the phosphor settles in the sealing resin, so that the phosphor is disposed in the vicinity of the light emitting diode. Can do. Further, the surface of the sealing resin can be made into a lens shape to some extent by the surface tension of the sealing resin before curing. However, since the lens shape formed here is determined by the surface tension of the sealing resin, it is difficult to form a lens sufficient for light distribution control. That is, since the lens shape cannot be freely controlled, desired light distribution characteristics such as increasing the luminance in the front direction and conversely increasing the luminance in the oblique direction cannot be realized. Further, since the lens shape is determined by the balance between surface tension and gravity, when the diameter of the dropped sealing resin is increased, the shape of the droplet is distorted, and in particular, the radius of curvature near the optical axis is increased.

  The material of the sealing resin used in the light emitting device of the present invention is a thermosetting resin in which the viscosity once decreases and the viscosity increases again as the temperature rises during curing, or the viscosity before curing is 5000 mPa · s or less at room temperature, particularly 300 mPa · s. It is preferable to use a thermosetting resin having a viscosity of 2000 mPa · s or less. In addition, even a resin having a viscosity of 5000 mPa · s or more at room temperature can be used in the present invention as long as the phosphor can be precipitated in the mold by leaving it for a sufficient time before curing. Thereby, the phosphor can be settled in the vicinity of the light emitting diode during or before curing of the sealing resin layer. As the thermosetting resin whose viscosity is once lowered and rises again as the temperature rises during curing, it is preferable to use a hard silicone resin, an epoxy resin, a modified silicone or the like.

  The density of the phosphor in the vicinity of the surface of the light emitting diode is preferably 20 times or more, more preferably 50 times or more the density of the phosphor in the vicinity of the surface of the sealing resin. As a result, light emission from the light emitting device is close to a point light source, and color unevenness due to the observation direction can be suppressed. Furthermore, it is preferable that the phosphor is not substantially distributed in the lens-shaped portion of the sealing resin. Since a general phosphor has a refractive index different from that of a surrounding sealing resin, it has an action of scattering light emitted from a light emitting diode or another phosphor. For this reason, if the phosphor is distributed in the lens-shaped portion of the sealing resin, the lens function is hindered, making it difficult to obtain desired light distribution characteristics. Here, the portion of the sealing resin that is molded into a lens shape refers to a straight line that connects the ends of the lens and the sealing resin when viewed from a cross section that includes the optical axis of the lens and where the maximum curvature of the lens appears. Refers to the area between the surfaces. In addition, the phrase “substantially free of phosphor” means not only when the portion does not contain any phosphor, but also the light emission intensity of the phosphor contained in that portion is distributed in the light emission of the light emitting diode or in the vicinity of the light emitting diode. It includes a case where it is so small as to be negligible as compared with the emission of the phosphor.

  Moreover, the lens formed in the sealing resin layer can be formed into a desired shape by compression molding. Therefore, it is preferable that the lens formed on the sealing resin layer is a lens having a different curvature depending on the light distribution direction. That is, the curvature is changed according to the cross-sectional direction of the lens. By providing the lens with a plurality of curvatures according to the light distribution direction, it is possible to realize desired light distribution characteristics. In particular, according to the present invention, since the phosphor can be distributed in the vicinity of the light emitting diode so as to be in a state close to a point light source, excellent optical characteristics can be realized in combination therewith.

  For example, a lens having different curvatures in the horizontal direction and the vertical direction can be obtained. Examples of lenses having different curvatures in the horizontal direction and the vertical direction include semi-cylindrical lenses. If a semi-cylindrical lens is formed on the sealing resin, a light emitting device excellent as a side view type can be obtained. That is, if the lens formed on the sealing resin is formed in a semi-cylindrical shape and the lens side surface of the semi-cylindrical is used as a mounting surface, a thin light-emitting device can be obtained, and the mounting surface becomes wide and stable mounting becomes possible. In the side-view type, light emission in the direction perpendicular to the mounting surface is shielded by the mounting substrate, so light distribution control in the direction parallel to the mounting surface is important, because the lens is semicylindrical The lens characteristics in the direction parallel to the mounting surface are the same as those of a normal hemispherical lens. Furthermore, it is possible to perform color tone correction without affecting the lens characteristics. That is, if the thickness of the sealing resin layer is changed by polishing the side surface of the sealing resin layer or the like, the amount of the phosphor contained in the sealing resin layer can also be changed, so that the color tone can be corrected. . Even if the sealing resin layer is polished to change the thickness, the shape of the lens formed on the upper surface of the sealing resin layer does not change, so there is almost no influence on the lens characteristics.

  The sealing resin may be a hemispherical lens having the same curvature in each cross section. If a hemispherical lens is formed on the sealing resin, for example, a light-emitting device excellent as a top-view type that extracts light emission from a surface parallel to the mounting surface can be obtained.

  The light emitting diode preferably has an ultraviolet or blue light emitting layer made of a nitride semiconductor. A light emitting diode having a light emitting layer made of a nitride semiconductor can emit short wavelength light having high energy with high intensity. Therefore, by combining the phosphors, it is possible to provide a light emitting device having various colors with high luminance.

  In particular, if the phosphor is capable of emitting white light by itself or mixed with the light emitted from the light emitting diode, it should be a light source applicable to backlights, various display lamps, flashlights, headlights, lighting, etc. Can do.

  As described above, according to the present invention, a light distribution control lens is formed on the sealing resin itself in which the phosphor is dispersed, and the phosphor is distributed in the vicinity of the light emitting diode in the sealing resin. Therefore, the arrangement of the phosphor and the lens formation can be performed in a single process, and the intake of contaminants into the sealing resin can be reduced, so that an excellent light emitting device can be provided.

  FIG. 1 is a perspective view showing a light emitting device according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view showing the X-X ′ cross section of the light emitting device 1 shown in FIG. 1. A negative electrode 4 and a positive electrode 6 are formed at a predetermined interval on an approximately rectangular parallelepiped insulating substrate 2 having a flat upper surface. The negative electrode 4 and the positive electrode 6 are connected to a mounting electrode (not shown) formed on the back surface of the insulating substrate 2 through a through hole (not shown). The light emitting diode 8 having a pair of positive and negative electrodes on the semiconductor surface side is mounted on the negative electrode 4 of the insulating substrate 2, and the negative electrode of the light emitting diode 8 is insulated from the negative electrode 4 on the insulating substrate. Each is connected to the positive electrode 6 on the substrate by a wire 10.

  A semi-cylindrical and translucent sealing resin layer 14 is formed so as to cover the light emitting diode 8. In the sealing resin layer 14, a phosphor 16 that absorbs part of the light emitted from the light emitting diode 8 and converts it into a long wavelength is dispersed. The phosphor 16 is excited by the light emission of the light emitting diode 8 and converts it into light having a longer wavelength than the light emitting diode 8. For example, when the light emitting diode 8 emits blue light, the phosphor 16 may absorb part of the blue light and emit yellow light having a longer wavelength. The blue light emitted from the light emitting diode 8 and the yellow light emitted from the phosphor are mixed to obtain white light emission. Further, the phosphors 16 have settled downward in the sealing resin layer 14 and are distributed near the upper surface of the insulating substrate 2 on which the light emitting diodes 8 are disposed. For this reason, variation in the amount of phosphor for each direction in which the light emitting diode 8 is observed is suppressed, and color unevenness due to the observation direction is reduced. Further, since the phosphors 16 are distributed in the vicinity of the light emitting diodes 8, it becomes close to an ideal point light source. The side surface 2a of the insulating substrate and the side surface 14a of the sealing resin layer are cut to be substantially flush with each other and are distributed to the side surface 14a where the phosphor 16 is exposed.

  The semi-cylindrical sealing resin layer 14 constitutes a cylindrical lens and plays a role of distributing light emitted from the light emitting diode 8 and the phosphor 16 in a desired direction. For example, the sealing resin 14 has a semi-cylindrical shape, and has a large refractive index difference on the surface by being in direct contact with an external air layer. Therefore, the light emitted from the light emitting diode 8 and the phosphor 16 is refracted on the surface of the sealing resin layer 14 and is distributed in a predetermined direction. In addition, the lens which the sealing resin layer 14 comprises is not restricted to a cylindrical lens, What kind of thing may be used if a desired condensing function or a light-diffusion function is exhibited. Here, light diffusion refers to the action of spreading light rays over a wide angle, not diffusion due to light scattering. For example, various convex lenses and concave lenses may be used.

  In the light-emitting device 1 according to the present embodiment, the sealing resin 14 in which the phosphor 16 is dispersed constitutes a light distribution control lens, and the phosphor 16 is the light-emitting diode 8 in the sealing resin 14. It is characterized by being distributed in the vicinity of. This makes it possible to perform the dispersion of the phosphor 16 in the vicinity of the light emitting diode 8 and the lens formation for controlling the light distribution of the light emitting device in a single process. In addition, since the sealing resin layer 14 of the light emitting diode 8 is formed at a time without being cured in the middle, contamination such as moisture and organic matter is hardly taken into the sealing resin. Furthermore, since there is no extra refractive index interface between the light emitting diode 8 and the phosphor 16 and the lens, it is possible to take out light efficiently.

  The light emitting device 1 as in the present embodiment can be manufactured, for example, by molding the sealing resin layer 14 in which the phosphor 16 is dispersed into a lens shape by a compression molding method. That is, according to the compression molding method, in order to cure the uniformly applied sealing resin while compressing with a mold, a low-viscosity thermosetting resin having a viscosity before curing of 5000 mPa · s or less, It is possible to form a desired lens using a thermosetting resin whose viscosity once decreases and increases again as the temperature increases during curing. By using a thermosetting resin having a low initial viscosity or a thermosetting resin that once decreases in viscosity at the time of curing, the phosphor 16 in the sealing resin 14 is allowed to settle before or during curing. The light emitting diodes 8 can be distributed in the vicinity. In addition, since the shape is determined by the mold, a lens having a desired lens diameter and curvature radius can be formed. That is, by forming the sealing resin layer 14 once, the arrangement of the phosphor 16 in the vicinity of the light emitting diode 8 and the lens formation with desired characteristics can be performed simultaneously.

(Method for manufacturing light-emitting device 1)
Hereinafter, a method for manufacturing the light emitting device 1 using the compression molding method will be described in detail.
1. Preparation of Package Assembly In this embodiment, a package assembly in which a plurality of light emitting devices are gathered is used until the sealing resin layer is cured so that a plurality of light emitting devices can be manufactured in a lump. As shown in FIG. 3, in the package assembly 12, mounting regions for the light emitting diodes 8 are arranged in a matrix on an insulating substrate 2 having a large area. Moreover, as shown in FIG. 4, the negative electrode 4 and the positive electrode 6 are formed so that the mounting area | region of each light emitting diode 8 may be pinched | interposed from both sides. A light emitting diode 8 is die-bonded on each negative electrode 4, and the negative electrode 4, the positive electrode 6, and the light emitting diode 8 are wired by a wire 10. One set of the light emitting diode 8, the negative electrode 4, and the positive electrode 6 constitute one package. Further, the negative electrodes 4 and the positive electrodes 6 are connected to each other in the packages in each row. That is, the negative electrode 4 and the positive electrode 6 in each column are each one continuous electrode. The insulating substrate 2 is made of a resin laminate having a thickness of 0.06 mm to 2.0 mm, for example, and has a plurality of through holes (not shown) penetrating in the thickness direction. The negative electrode 4 and the positive electrode 6 are connected to the mounting electrode formed on the back surface of the insulating substrate 2 through this through hole.

2. Application of Sealing Resin 14 Containing Phosphor 16 Next, as shown in FIG. 5A, the package assembly 12 is placed on the lower mold 22 heated to a predetermined temperature. Here, the lower mold 22 is preferably heated to the primary curing temperature of the sealing resin 14 to be applied. Next, as shown in FIG. 5B, an appropriate amount of a liquid thermosetting resin obtained by uniformly kneading the phosphor 16 is applied to the upper surface of the package assembly 12 by the dispenser 26 or the like. Thus, the light emitting diode 8, the negative electrode 4, and the positive electrode 6 are covered with a uniform thickness by the sealing resin layer 14 in which the phosphors 16 are uniformly dispersed. At this time, the sealing resin 14 is applied in an amount sufficient to form a desired lens when compressed by a mold. Moreover, it is preferable to form the thickness so that at least the wire 10 is completely embedded.

3. Molding the sealing resin 14, the primary cure Next, as shown in FIG. 5C and D, close the upper mold 24 from above the sealing resin layer 14 coated, the sealing resin layer by adding a predetermined pressure 14 Compress. The upper mold 24 is formed with a semi-cylindrical lens mold. And it hold | maintains for a predetermined time in the state compressed with the upper metal mold | die 24, and primarily hardens the sealing resin layer 14 which consists of thermosetting resins. Here, as the thermosetting resin constituting the sealing resin layer 14, a resin that once decreases in viscosity with increasing temperature and increases in viscosity again is preferable. For example, a hard silicone resin or an epoxy resin can be used. Accordingly, as shown in FIG. 5E, the phosphor 16 in the sealing resin 14 can be allowed to settle while the sealing resin 14 is heated in the molds 22 and 24. It is preferable to set the heating temperature and heating time in the molds 22 and 24 so that the phosphor 16 is sufficiently settled and the sealing resin 14 reaches a hardness sufficient to maintain a predetermined shape. For example, it is desirable that the primary curing temperature is 100 to 170 ° C, more preferably about 120 to 150 ° C. The curing time is preferably 200 sec to 900 sec, more preferably 250 sec to 600 sec.

  Here, as the thermosetting resin constituting the sealing resin layer 14, there is the following advantage if a resin whose viscosity is once lowered and then increased again as the temperature rises is used. That is, since the viscosity of the sealing resin layer 14 is somewhat high before application to the package assembly 12, the phosphor 16 does not settle so much in the sealing resin 14 held in the dispenser 26, and the phosphor 16 is uniform. It is easy to keep the state dispersed in the. For this reason, when the sealing resin 14 containing a phosphor is applied to the package assembly 12, variation in the amount of phosphor applied for each light emitting diode 8 can be suppressed. And after apply | coating the sealing resin 14 on each light emitting diode 8, since the viscosity of the sealing resin 14 falls with a temperature rise, the fluorescent substance 16 can be settled in the vicinity of the light emitting diode 8. FIG. Therefore, a thermosetting resin in which the viscosity once decreases with increasing temperature during curing, or a thermosetting resin having a viscosity before curing of 5000 mPa · s or less, particularly 300 mPa · s or more and 2000 mPa · s or less at room temperature. It is preferable to use it. It should be noted that even a thermosetting resin having a viscosity of 5000 mPa · s or more at room temperature can be used as long as the phosphor can settle by being left in the mold for a sufficient time before curing.

  A thermosetting resin that has a low initial viscosity and that simply increases with increasing temperature may be used. In that case, it is preferable to sufficiently stir in the dispenser 26 so as to prevent sedimentation of the phosphor before coating. Moreover, it is preferable to apply the sealing resin 14 before heating in the molds 22 and 24 in order to sufficiently settle the phosphor after application. For example, the sealing resin 14 may be applied before being placed in the mold, and the phosphor 16 may be settled before being placed in the mold.

4). Secondary curing of the sealing resin 14 Next, the package assembly 12 in which the sealing resin layer 14 is primarily cured is taken out of the mold and heated under predetermined conditions to secondarily cure the sealing resin 14. The secondary curing conditions are preferably set so that the curing of the sealing resin 14 proceeds completely. For example, it is preferable that the temperature of secondary curing is equal to or higher than that of primary curing, and the time of secondary curing is set to be longer than that of primary curing. In the case of an epoxy resin or hard silicone, the secondary curing time is preferably about 3 to 5 hours, more preferably about 3.5 to 4.5 hours. If the secondary curing is performed under such conditions, it is possible to prevent unreacted cured components from remaining in the sealing resin 14 and adversely affect the reliability of the light emitting diode 8. Further, by performing secondary curing after taking out from the molds 22 and 24, the throughput of the process can be increased.

5. Dicing Next, as shown in FIG. 5F, the package assembly 12 is diced from two directions, and the light emitting device is cut out with a predetermined width and a predetermined length, thereby completing the light emitting device. That is, dicing is first performed in a direction parallel to the lens, and a row of package assemblies 12 in which a semi-cylindrical lens is formed is cut out. Then, the individual light emitting devices 1 are obtained by dicing the cut out package assemblies of the respective rows in a direction perpendicular to the longitudinal direction.

  As described above, according to the present embodiment, the formation of the phosphor 16 in the vicinity of the light emitting diode and the formation of the lens having desired characteristics can be simultaneously performed by forming the sealing resin layer 14 once. . That is, the phosphor 16 in the sealing resin 14 is precipitated during curing or before curing by using a thermosetting resin whose viscosity is once lowered during curing or a thermosetting resin having a low initial viscosity. 16 can be distributed in the vicinity of the light emitting diodes 8. Also, a thermosetting resin that can maintain a low viscosity state for a sufficient time for the phosphor to settle in the mold can be used. Further, a lens having a desired lens diameter and curvature radius can be formed by the molds 22 and 24.

  Further, as in the present embodiment, if the sealing resin 14 in which the phosphor 16 is dispersed is compression-molded to form a lens, a cup for holding the resin containing the phosphor as in Patent Document 3 is obtained. It becomes unnecessary. Accordingly, it is possible to directly form the sealing resin 14 containing the phosphor 16 and forming the lens on the substantially flat upper surface of the insulating substrate 2. As a result, light emitted from the light emitting diode 8 in the lateral direction can be extracted without being blocked. In addition, this invention does not exclude providing the concave cup which accommodates the light emitting diode 8. FIG. In particular, when the light emission of the light emitting diode 8 and the phosphor 16 is distributed in the front direction, a concave cup may be positively provided as a reflection mirror.

  Further, as in the present embodiment, a semi-cylindrical (or lumpy) lens is formed in the sealing resin 14 and cut into individual light emitting devices by dicing, so that the light emitting device has a shape suitable for the side view type. Can be easily manufactured.

(Mounting of light emitting device 1, color correction)
Next, mounting and color correction of the light emitting device according to this embodiment will be described.
FIG. 6 is a perspective view showing a state in which the light emitting device 1 shown in FIGS. 1 and 2 is mounted on a mounting substrate as a side view type light emitting device. Here, the side view type is a type of surface mount type and is a type of light emitting device that emits light from a side surface substantially perpendicular to the mounting surface. The semi-cylindrical (= kamaboko-type) light emitting device 1 is mounted on a mounting substrate 3 with the flat bottom surface of the semi-cylindrical as a mounting surface. At this time, the upper surface 14 b of the sealing resin layer that is the light emitting surface is substantially perpendicular to the mounting substrate 3. Positive and negative lead electrodes 18 and 20 are formed on the surface of the mounting substrate 3, and are connected to mounting electrodes (not shown) formed on the back surface of the insulating substrate 2 of the light emitting device 1 by solder 22. ing.

  This light emitting device can be made thinner than conventional light emitting devices because the upper and lower surfaces are cut flat. In addition, since the mounting surface is composed of the sealing resin and the substrate, the mounting surface has a wide area and stable mounting is possible.

  Further, a cylindrical lens (single-convex cylindrical lens) is formed on the upper surface 14b of the sealing resin, and the phosphors 16 are distributed in the vicinity of the light emitting diodes 8 in the sealing resin 14, which is excellent. Shows optical effect. That is, first, as a result of the cylindrical lens being formed on the upper surface 14b of the sealing resin 14, the light emission of the light emitting device 1 is bent in the front direction in the direction parallel to the mounting substrate surface, and the luminous intensity in the front direction Becomes higher. Further, since the phosphor 16 that scatters light settles in the vicinity of the light emitting diode 8 in the sealing resin, the lens function of the sealing resin 14 is not hindered, and the light beam is bent efficiently in the front direction. It is done. Further, as a result of the phosphor 16 being distributed very close to the light emitting diode 8, there is little color unevenness caused by the observation direction, and it becomes closer to a point light source. The sealing resin layer 14 does not exhibit a lens effect in a direction perpendicular to the mounting substrate surface, but has no lens effect in the direction perpendicular to the mounting substrate surface because the light emission is originally shielded by the mounting substrate 3. But there is not much problem.

  In addition, the light emitting device according to this embodiment can correct the color tone with little influence on the lens characteristics. That is, as shown in FIG. 6, if the thickness W of the sealing resin layer is changed to W ′ by, for example, polishing the side surface 14a of the sealing resin layer, the phosphor (see FIG. (Not shown) can also be varied. As a result, the light emission intensity ratio between the light emitting diode 8 and the phosphor 16 can be changed, so that the color tone can be corrected. On the other hand, even if the sealing resin layer 14 is polished to change the thickness W, the shape of the lens formed on the upper surface 14b of the sealing resin layer is hardly changed. Accordingly, it is possible to correct the color tone without affecting the lens characteristics.

  When color correction is performed for a large number of light emitting devices at the same time, it is preferable to perform, for example, the following method.

-Step 1.
In step 1, the chromaticity of the light emitting device after the sealing resin layer 14 is cured is measured in total (initial chromaticity measurement step).

-Step 2.
In step 2, based on the chromaticity measured in step 1, chromaticity is determined by grouping a group in which the difference between the measured chromaticity and the target chromaticity is within a preset range. Sort by range (grouping process). The number of groups to be classified is preferably as large as possible to reduce the chromaticity variation after adjustment, but the number of groups is set to an appropriate number in consideration of the required chromaticity range (standard) and manufacturing efficiency.

-Step 3.
Finally, in step 3, the side surface of the sealing resin layer is polished for each group by an amount set based on the difference from the target chromaticity (polishing step). That is, light emitting elements belonging to the same group are polished by the same polishing amount (value set for each group). According to the adjustment method as described above, chromaticity can be adjusted collectively for each group, so that chromaticity can be adjusted efficiently and chromaticity variation can be reduced. The polishing is preferably performed on the side surface opposite to the mounting surface. This is because the flatness of the mounting surface is not impaired.

  Polishing can be performed, for example, by the following method. A plurality are arranged on a polishing apparatus and polished so as to achieve a target chromaticity. As a tool for polishing, for example, a disk-shaped grindstone is provided at the tip of the rotating shaft, and the sealing resin layer 14 is polished by an amount corresponding to the difference between the target chromaticity and the measured chromaticity. . During this polishing, a plurality of light emitting devices can be adjusted at a time by providing a grindstone for each of the plurality of light emitting devices arranged on the polishing apparatus. At this time, grouping can be performed in accordance with the amount of shaving, and shaving can be performed all at once, or shaving until the target chromaticity is achieved while measuring the chromaticity one by one with an optical sensor (this Even in such a case, it is needless to say that a plurality of light emitting elements can be simultaneously processed in parallel if an optical sensor and a grindstone are provided in each light emitting device to control the amount of shaving for each light emitting element.

Hereinafter, each structure of the light-emitting device 1 is demonstrated in detail.
(Sealing resin 14)

  The material of the sealing resin layer 14 is not particularly limited as long as the material transmits the light emitted from the light emitting diode 8 and the phosphor 16 and can stably disperse the phosphor 16. However, in order to distribute the phosphor in the vicinity of the light emitting diodes, a thermosetting resin in which the viscosity once decreases and increases again when the temperature rises during curing, or the viscosity before curing is 5000 mPa · s or less, particularly 300 mPa at room temperature. -It is preferable to use the thermosetting resin which is s or more and 2000 mPa * s or less. Thereby, the phosphor 16 can be settled in the vicinity of the light emitting diode 8 during or before the sealing resin layer 12 is cured. It is preferable to use a hard silicone resin, an epoxy resin, or the like as the thermosetting resin that once decreases in viscosity with increasing temperature during curing and then increases again. On the other hand, a hard silicone resin, an epoxy resin, or the like can be used as the thermosetting resin having a viscosity before curing of 5000 mPa · s or less, particularly 300 mPa · s or more and 2000 mPa · s or less.

  Further, the lens formed on the sealing resin layer 14 is not limited to the semi-cylindrical cylindrical lens described in the present embodiment, and various forms can be employed. For example, in the case of a top view type in which light emission is extracted from a surface parallel to the mounting surface, it is preferable to form a hemispherical one-convex lens. Moreover, you may form in lens shapes other than a convex lens depending on a use. In any lens, it is necessary to have a curvature and a lens diameter sufficient to obtain desired light distribution characteristics.

  In addition, when a substantially semi-cylindrical lens is formed for a side view type application, not only a direction parallel to the mounting surface but also a direction perpendicular to the mounting surface may be provided with some curvature. However, the curvature in the direction perpendicular to the mounting surface is preferably very small. This is because if a lens having a large curvature in the direction perpendicular to the mounting surface is formed, the lens characteristics are likely to change when the side surface of the sealing resin layer is polished to correct the color tone. Further, since light emission in the direction perpendicular to the mounting surface is shielded by the mounting substrate, there is no particular problem even if a lens having a large curvature is not provided in the direction perpendicular to the mounting surface.

  Further, the phosphors 16 dispersed in the sealing resin 14 need to be distributed at a higher density near the surface of the light emitting diode 8 than near the surface of the sealing resin 14. The density of the phosphor in the vicinity of the surface of the light emitting diode 8 is preferably 20 times or more, more preferably 50 times or more the density of the phosphor in the vicinity of the surface of the sealing resin 14. As a result, variation in the amount of phosphor for each direction in which the light emitting diode 8 is observed can be suppressed, and color unevenness due to the observation direction can be reduced. Further, since the phosphors 16 are distributed in the vicinity of the light emitting diodes 8, it becomes close to an ideal point light source. In particular, the density of the phosphor in the vicinity of the surface of the light emitting diode 8 is preferably 100 times or more the density of the phosphor in the vicinity of the surface of the sealing resin 14. Thereby, a light distribution characteristic substantially similar to a point light source can be obtained, and color misregistration can be prevented. In addition, if a diffusing agent or the like is provided in the vicinity of the surface of the sealing resin 14, light can be dispersed more uniformly. Here, the density of the phosphor near the surface of the sealing resin 14 is about 10% from the surface to the height of the sealing resin 14 on the optical axis of the lens formed on the sealing resin 14. The average density (number per unit volume) of phosphor particles contained in a portion when it is cut out. Further, the density of the phosphor 16 in the vicinity of the surface of the light emitting diode 8 is determined when about 10% is cut from the surface of the light emitting diode with respect to the height of the sealing resin 14 on the central axis of the light emitting diode 8. The average density of the phosphor particles contained in.

  Moreover, it is preferable that the fluorescent substance 16 is not substantially distributed in the lens-shaped part of the sealing resin 14. That is, the phosphor 16 not only absorbs part of the light from the light emitting diode 8 and converts the wavelength, but also has a function of reflecting and scattering light emitted from the light emitting diode 8 and other phosphors 16. For this reason, if the phosphor is distributed in the lens-shaped portion of the sealing resin, the lens function is hindered, making it difficult to obtain desired light distribution characteristics. Here, the portion of the sealing resin that is molded into a lens shape refers to a straight line that connects the ends of the lens and the sealing resin when viewed from a cross section that includes the optical axis of the lens and where the maximum curvature of the lens appears. Refers to the area between the surfaces.

(Insulating substrate 2 / electrodes 4, 6)
The insulating substrate 2 is not particularly limited as long as it is a material having appropriate mechanical strength and insulating properties. For example, BT resin, glass epoxy, or the like can be used. Moreover, what laminated | stacked the multilayered epoxy resin sheet may be used. In addition, the negative and positive electrodes 4 and 6 formed on the insulating substrate 2 are preferably metal layers mainly composed of Cu. For example, the negative and positive electrodes 4 and 6 can be made of Cu / Ni / Ag.

(Light emitting diode 8 / phosphor 16)
The light emitting diode 8 and the phosphor 16 are not particularly limited as long as the phosphor 16 can convert the wavelength of part or all of the light emission of the light emitting diode 8. As an example, a combination of the light-emitting diode 8 and the phosphor 16 suitable for forming a white light-emitting device that is currently in the highest demand will be described.
-Light emitting diode 8
As a light-emitting diode suitable for constituting a white light-emitting device, a light-emitting diode made of a nitride semiconductor (In X Al Y Ga 1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is used. Can do. In this light emitting diode, if In x Ga 1-x N (0 <x <1) is used as the light emitting layer, the light emission wavelength can be arbitrarily changed from about 365 nm to 650 nm depending on the degree of mixed crystal.

  In the case of emitting white light, considering the complementary color relationship with the light emitted from the phosphor, the emission wavelength of the light emitting diode 8 is preferably set to 400 nm or more and 530 nm or less, and set to 420 nm or more and 490 nm or less. It is more preferable. Note that a light-emitting diode that emits light having an ultraviolet wavelength shorter than 400 nm can be applied by selecting the type of phosphor.

-Phosphor 16
The fluorescent substance may be any substance that absorbs light from a semiconductor light emitting diode having a nitride semiconductor as a light emitting layer and converts the light to light of a different wavelength. For example, it is mainly activated by nitride-based phosphors / oxynitride-based phosphors mainly activated by lanthanoid elements such as Eu and Ce, lanthanoid-based phosphors such as Eu, and transition metal elements such as Mn. Alkaline earth halogen apatite phosphor, alkaline earth metal borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth silicate, alkaline earth sulfide, alkaline earth thiogallate, alkaline earth nitriding Selected from organic and organic complexes mainly activated by lanthanoid elements such as silicon, germanate or lanthanoid elements such as Ce, rare earth aluminate, rare earth silicate or Eu It is preferable that it is at least any one or more. As specific examples, the following phosphors can be used, but are not limited thereto.

A nitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is M 2 Si 5 N 8 : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn). There is.) In addition to M 2 Si 5 N 8 : Eu, MSi 7 N 10 : Eu, M 1.8 Si 5 O 0.2 N 8 : Eu, M 0.9 Si 7 O 0.1 N 10 : Eu (M Is at least one selected from Sr, Ca, Ba, Mg, and Zn.
An oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is MSi 2 O 2 N 2 : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn) Etc.).

Alkaline earth halogen apatite phosphors mainly activated by lanthanoid compounds such as Eu and transition metal elements such as Mn include M 5 (PO 4 ) 3 X: R (M is Sr, Ca, Ba). X is at least one selected from F, Cl, Br and I. R is any one of Eu, Mn, Eu and Mn. Etc.).
The alkaline earth metal borate phosphor has M 2 B 5 O 9 X: R (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is F, Cl , Br, or I. R is Eu, Mn, or any one of Eu and Mn.).
Alkaline earth metal aluminate phosphors include SrAl 2 O 4 : R, Sr 4 Al 14 O 25 : R, CaAl 2 O 4 : R, BaMg 2 Al 16 O 27 : R, BaMg 2 Al 16 O 12 : R, BaMgAl 10 O 17 : R (R is Eu, Mn, or any one of Eu and Mn).
Examples of the alkaline earth sulfide phosphor include La 2 O 2 S: Eu, Y 2 O 2 S: Eu, and Gd 2 O 2 S: Eu.

Examples of rare earth aluminate phosphors mainly activated with lanthanoid elements such as Ce include Y 3 Al 5 O 12 : Ce, (Y 0.8 Gd 0.2 ) 3 Al 5 O 12 : Ce, Y 3 (Al 0.8 Ga 0.2) 5 O 12: Ce, and the like (Y, Gd) 3 (Al , Ga) YAG -based phosphor represented by the composition formula of 5 O 12. Further, there are Tb 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce, etc. in which a part or all of Y is substituted with Tb, Lu or the like.
Other phosphors include ZnS: Eu, Zn 2 GeO 4 : Mn, MGa 2 S 4 : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is At least one selected from F, Cl, Br, and I).
The phosphor described above contains at least one selected from Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, and Ti instead of Eu or in addition to Eu as desired. You can also

The Ca—Al—Si—O—N-based oxynitride glass phosphor is expressed in terms of mol%, CaCO 3 is converted to CaO, 20 to 50 mol%, Al 2 O 3 is 0 to 30 mol%, SiO 25 to 60 mol%, AlN 5 to 50 mol%, rare earth oxide or transition metal oxide 0.1 to 20 mol%, and oxynitride glass having a total of 5 components of 100 mol% as a base material This is a phosphor. In addition, in the phosphor using oxynitride glass as a base material, the nitrogen content is preferably 15 wt% or less, and other rare earth element ions serving as a sensitizer in addition to rare earth oxide ions are used as rare earth oxides. It is preferable to contain as a co-activator in content in the range of 0.1-10 mol% in fluorescent glass.
Moreover, it is fluorescent substance other than the said fluorescent substance, Comprising: The fluorescent substance which has the same performance and effect can also be used.

  In the above embodiment, the light emitting diode 8 that emits light from the electrode side is used, and the electrode of the light emitting diode 8 and the electrode on the insulating substrate 2 are wire bonded. However, the present invention is not limited to this, and the light emitting diode 8 may be flip-chip bonded onto the insulating substrate 2. Specifically, the light-emitting diode is placed so that the p-side electrode and the n-side electrode of the light-emitting diode 8 are opposed to the positive and negative electrodes formed on the insulating substrate 2, respectively. Each is mounted by bonding with a conductive adhesive member such as solder.

  The light emitting diode for flip chip bonding is basically configured in the same manner as the light emitting diode for wire bonding. For example, in the case of a nitride semiconductor light emitting device, a plurality of nitride semiconductor layers including n-type and p-type nitride semiconductor layers are stacked on one main surface of a translucent substrate, and the uppermost p-type is formed. A p-side electrode is formed on the nitride semiconductor layer (p-type contact layer), and an n-side electrode is formed on the n-type nitride semiconductor layer exposed by removing a part of the p-type nitride semiconductor layer. The other main surface of the translucent substrate may be used as the main light extraction surface.

[Example 1]
In this example, the light emitting device having the structure shown in FIG. 1 was manufactured by the following method.
First, a plurality of pairs of positive and negative electrodes made of Cu / Ni / Ag were formed on a substrate sheet bonded with an epoxy resin sheet, and an InGaN blue LED having an emission wavelength of 450 nm was mounted on each electrode pair. The LED and the electrode were connected by wire bonding using a gold wire.

  Next, the board | substrate sheet | seat in which LED was mounted was mounted in the metal mold | die of the compression molding machine heated at 120 degreeC. And the liquid epoxy resin which disperse | distributed YAG: Ce fluorescent substance was dripped on the board | substrate sheet | seat, and was hardened for 600 seconds at 120 degreeC within the metal mold | die of the compression molding machine. Here, as the liquid epoxy resin, one having an initial viscosity of 1000 mPa · s and a glass transition temperature of 140 ° C. was used. And after taking out from the metal mold | die, it was further hardened at 150 degreeC for 4 hours. In this way, a light emitting device having a semi-cylindrical lens as shown in FIG. 1 was obtained.

[Comparative Example 1]
As a comparative example, a light emitting device was prepared by the following method.
First, it carried out similarly to Example 1 until LED was mounted in a board | substrate sheet | seat. Thereafter, the substrate sheet was mounted in a mold of a transfer mold molding machine heated to 150 ° C., and an epoxy resin for transfer mold mixed with YAG: Ce phosphor was injected and held for 300 sec. And after taking out the mold, it was cured at 150 ° C. for 4 hours to obtain a light emitting device having a semi-cylindrical lens as shown in FIG.

(Comparison of emission intensity)
For the light emitting devices of Example 1 and Comparative Example 1, the light distribution characteristics in the 0 ° direction (x direction in FIG. 6) parallel to the mounting surface are shown in FIG. 7A, and the 90 ° direction (in FIG. 6) perpendicular to the mounting surface. FIG. 7B shows light distribution characteristics in the y direction). As shown in FIGS. 7A and 7B, it can be seen that the example of the present invention is more excellent in directivity than the comparative example and has a higher luminous intensity in the front direction, particularly in the 90 ° direction. This is presumably because, in the comparative example, the phosphor is dispersed throughout the sealing resin layer, and thus the light spreads due to light scattering of the phosphor. In the embodiment of the present invention, the portion of the sealing resin layer on which the lens is formed does not substantially contain a phosphor, so that the directivity is high and the luminous intensity in the front direction is high.

(Comparison of color unevenness)
Further, regarding the light emitting devices of Example 1 and Comparative Example 1, changes in chromaticity depending on the observation direction were examined. 8A and 8B show changes in the chromaticity coordinates x depending on the observation direction, and FIGS. 9A and 9B show changes in the chromaticity coordinates y depending on the observation direction. 8A and 9A are graphs of chromaticity change in the 0 ° direction parallel to the mounting surface, and FIGS. 8B and 9B are graphs of chromaticity change in the 90 ° direction perpendicular to the mounting surface. As shown in FIG. 8A, FIG. 8B, FIG. 9A and FIG. 9B, the chromaticity change is less in the embodiment of the present invention than in the comparative example, particularly in the 90 ° direction, and the color unevenness due to the observation direction is suppressed. I understand. This is presumably because, in the comparative example, since the phosphor is dispersed throughout the sealing resin layer, the amount of the phosphor changes depending on the observation direction. On the other hand, in the embodiment of the present invention, since the phosphors are distributed in the vicinity of the light emitting diode 8, there is little color unevenness due to the observation direction.

FIG. 1 is a perspective view showing an example of a light emitting device according to the present invention. 2 is a cross-sectional view taken along line XX of the light emitting device shown in FIG. FIG. 3 is a perspective view showing an example of a package assembly. FIG. 4 is a partially enlarged plan view showing a part of the package assembly. FIG. 5A is a cross-sectional view showing a sealing resin forming step. FIG. 5B is a cross-sectional view showing a step that follows FIG. 5A. FIG. 5C is a cross-sectional view showing a step that follows FIG. 5B. FIG. 5D is a cross-sectional view showing a step that follows FIG. 5C. FIG. 5E is a cross-sectional view showing a step that follows FIG. 5D. FIG. 5F is a cross-sectional view showing a step that follows FIG. 5E. FIG. 6 is a perspective view showing a state in which the light emitting device shown in FIG. 1 is mounted. 7A is a graph showing the light distribution characteristics in the 0 ° direction of Example 1 and Comparative Example 1. FIG. FIG. 7B is a graph showing the light distribution characteristics in the 90 ° direction of Example 1 and Comparative Example 1. 8A is a graph showing the distribution of chromaticity coordinates x in the 0 ° direction of Example 1 and Comparative Example 1. FIG. 8B is a graph showing the distribution of chromaticity coordinates x in the 90 ° direction in Example 1 and Comparative Example 1. FIG. 9A is a graph showing the distribution of chromaticity coordinates y in the 0 ° direction in Example 1 and Comparative Example 1. FIG. FIG. 9B is a graph showing the distribution of chromaticity coordinates y in the 90 ° direction in Example 1 and Comparative Example 1. FIG. 10 is a cross-sectional view showing a sealing resin forming step by a transfer molding method.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Light-emitting device, 2 Insulating substrate, 4 Negative electrode, 6 Positive electrode, 8 Light emitting diode, 10 Bonding wire, 12, Package assembly, 14 Sealing resin, 16 Phosphor, 22 Lower die, 24 Upper die, 26 Dispenser

Claims (9)

  1. A substrate, a positive electrode and a negative electrode formed on the substrate, a light emitting diode connected to the positive electrode and the negative electrode, a sealing resin covering the light emitting diode, and at least a part of light emission of the light emitting diode by absorbing a light emitting device having a phosphor that converts to a long wavelength, and a convex lens for changing the light distribution direction of light emission of the light emitting diode and / or the phosphor, a,
    The sealing resin is a thermosetting resin, wherein contains a phosphor, and a flat portion formed on both side of the lens-shaped portion and the lens-like portions constituting the convex lens at least one of the cross And is integrally molded by resin molding ,
    The phosphor is denser in the vicinity of the surface of the sealing resin and in the vicinity of the surface of the light emitting diode than in the flat portion due to the precipitation of the phosphor during the molding of the sealing resin into a convex lens shape. A light-emitting device that is distributed.
  2.   2. The light emitting device according to claim 1, wherein the sealing resin is made of a thermosetting resin whose viscosity once decreases and increases again as the temperature increases during curing.
  3.   The light emitting device according to claim 1, wherein the sealing resin includes at least one member selected from the group consisting of a hard silicone resin, an epoxy resin, and a modified silicone.
  4.   The light emitting device according to claim 1, wherein the sealing resin is molded into a lens shape by a compression molding method.
  5.   The light emitting device according to claim 1, wherein the phosphor is not substantially distributed in a portion of the sealing resin that is molded into the lens shape.
  6.   6. The light emission according to claim 1, wherein the density of the phosphor in the vicinity of the surface of the light emitting diode is 20 times or more the density of the phosphor in the vicinity of the surface of the sealing resin. apparatus.
  7. The convex lens, the light-emitting device according to any one of claims 1 to 6, characterized in that a substantially semi-cylindrical or hemispherical.
  8.   The light emitting device according to claim 1, wherein the light emitting diode has an ultraviolet or blue light emitting layer made of a nitride semiconductor.
  9. The light emitting device according to any one of claims 1 to 8 , wherein the phosphor is capable of emitting white light alone or by mixing with light emitted from the light emitting diode.
JP2005042533A 2005-02-18 2005-02-18 Light emitting device Active JP4953578B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005042533A JP4953578B2 (en) 2005-02-18 2005-02-18 Light emitting device

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
JP2005042533A JP4953578B2 (en) 2005-02-18 2005-02-18 Light emitting device
TW95105503A TWI419375B (en) 2005-02-18 2006-02-17 Light emitting device provided with lens for controlling light distribution characteristic
EP20060003285 EP1693904A3 (en) 2005-02-18 2006-02-17 Light emitting device provided with lens for controlling light distribution characteristic
TW102131355A TW201403859A (en) 2005-02-18 2006-02-17 Light emitting device provided with lens for controlling light distribution characteristic
KR20060015762A KR101204115B1 (en) 2005-02-18 2006-02-17 Light emitting device with light distribution characteristic controlling lens
TW104106556A TWI521748B (en) 2005-02-18 2006-02-17 The light emitting device includes a light distribution control by the lens characteristics of
US11/356,276 US7710016B2 (en) 2005-02-18 2006-02-17 Light emitting device provided with lens for controlling light distribution characteristic
CNB2006100041539A CN100481447C (en) 2005-02-18 2006-02-20 Light emitting device provided with lens for controlling light distribution characteristic
US12/473,121 US8558446B2 (en) 2005-02-18 2009-05-27 Light emitting device provided with lens for controlling light distribution characteristic
US14/025,684 US8836210B2 (en) 2005-02-18 2013-09-12 Light emitting device provided with lens for controlling light distribution characteristic
US14/465,315 US9093619B2 (en) 2005-02-18 2014-08-21 Light emitting device provided with lens for controlling light distribution characteristic

Publications (2)

Publication Number Publication Date
JP2006229054A JP2006229054A (en) 2006-08-31
JP4953578B2 true JP4953578B2 (en) 2012-06-13

Family

ID=36923541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005042533A Active JP4953578B2 (en) 2005-02-18 2005-02-18 Light emitting device

Country Status (2)

Country Link
JP (1) JP4953578B2 (en)
CN (1) CN100481447C (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8999736B2 (en) 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
US9061450B2 (en) 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
CN100570209C (en) 2007-09-26 2009-12-16 东捷科技股份有限公司 LED illuminating device mixed through fluorescent substance
JP2009200172A (en) * 2008-02-20 2009-09-03 Sharp Corp Manufacturing method of optical semiconductor device, and manufacturing device of optical semiconductor device
JP5709943B2 (en) * 2008-04-24 2015-04-30 シチズンホールディングス株式会社 LED light source manufacturing method
TWI380483B (en) 2008-12-29 2012-12-21 Everlight Electronics Co Ltd Led device and method of packaging the same
JP5349167B2 (en) * 2009-06-26 2013-11-20 シチズンホールディングス株式会社 Manufacturing method of LED light source device
KR101114794B1 (en) * 2009-10-26 2012-03-09 엘지이노텍 주식회사 Light emitting device package and method for fabricating the same
US20110116262A1 (en) * 2009-11-13 2011-05-19 Phoseon Technology, Inc. Economical partially collimating reflective micro optical array
US9039216B2 (en) 2010-04-01 2015-05-26 Lg Innotek Co., Ltd. Light emitting device package and light unit having the same
DE102010031945A1 (en) * 2010-07-22 2012-01-26 Osram Opto Semiconductors Gmbh Semiconductor device and method for manufacturing a semiconductor device
JP5242641B2 (en) * 2010-08-25 2013-07-24 シャープ株式会社 Method for manufacturing light emitting device
CN102456780B (en) * 2010-10-29 2014-11-05 展晶科技(深圳)有限公司 Packaging method of light emitting diode (LED)
CN102478207A (en) * 2010-11-29 2012-05-30 欧司朗有限公司 Optical lens and light emitting component comprising same
KR20120093679A (en) * 2011-02-15 2012-08-23 삼성전자주식회사 Light emitting device package and manufacturing method thereof
US10147853B2 (en) 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent
US9397274B2 (en) * 2011-08-24 2016-07-19 Lg Innotek Co., Ltd. Light emitting device package
JP6038443B2 (en) * 2011-11-21 2016-12-07 スタンレー電気株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
CN103137843A (en) * 2011-11-24 2013-06-05 展晶科技(深圳)有限公司 Light-emitting diode device
KR20140088088A (en) 2011-11-29 2014-07-09 샤프 가부시키가이샤 Sealing member, and method for producing fluorescent material-containing sealing member
JP2013118235A (en) * 2011-12-02 2013-06-13 Hitachi Appliances Inc Luminaire
JP2013197294A (en) * 2012-03-19 2013-09-30 Toshiba Lighting & Technology Corp Luminaire
JP6219586B2 (en) 2012-05-09 2017-10-25 ローム株式会社 Semiconductor light emitting device
US10424702B2 (en) 2012-06-11 2019-09-24 Cree, Inc. Compact LED package with reflectivity layer
EP3028302A1 (en) * 2013-08-01 2016-06-08 Cree, Inc. Light emitting diode package with encapsulant having curved and planar surfaces
KR101629622B1 (en) * 2012-09-28 2016-06-21 샤프 가부시키가이샤 Production method for sealing material containing fluorescent body, production method for light-emitting device, and dispenser
JP6092372B2 (en) * 2013-04-15 2017-03-08 シャープ株式会社 Open reel
CN104347785A (en) * 2013-08-07 2015-02-11 广州众恒光电科技有限公司 Die-method fluorescent powder adhesive layer coating process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315822A (en) * 1999-04-30 2000-11-14 Runaraito Kk Light emitting diode and manufacture thereof
US6989412B2 (en) * 2001-06-06 2006-01-24 Henkel Corporation Epoxy molding compounds containing phosphor and process for preparing such compositions
JP4147755B2 (en) * 2001-07-31 2008-09-10 日亜化学工業株式会社 Light emitting device and manufacturing method thereof
JP4292794B2 (en) * 2002-12-04 2009-07-08 日亜化学工業株式会社 Light emitting device, method for manufacturing light emitting device, and method for adjusting chromaticity of light emitting device
CN2586251Y (en) 2002-12-04 2003-11-12 银河光电股份有限公司 Packing structure of white light LED
JP4138586B2 (en) 2003-06-13 2008-08-27 スタンレー電気株式会社 LED lamp for light source and vehicle headlamp using the same

Also Published As

Publication number Publication date
CN100481447C (en) 2009-04-22
JP2006229054A (en) 2006-08-31
CN1822365A (en) 2006-08-23

Similar Documents

Publication Publication Date Title
US9287469B2 (en) Encapsulation for phosphor-converted white light emitting diode
JP5707697B2 (en) Light emitting device
US7157746B2 (en) Light emitting device having a divalent-europium-activated alkaline earth metal orthosilicate phosphor
TWI459584B (en) Light emitting device and method for manufacturing the same
JP5326705B2 (en) Light emitting device
US7078253B2 (en) Radiation emitting semiconductor component with luminescent conversion element
KR101047705B1 (en) Method of manufacturing semiconductor light emitting device and semiconductor light emitting device
EP2437318B1 (en) Wavelength-converted light-emitting device with uniform light-emission
JP5217800B2 (en) Light emitting device, resin package, resin molded body, and manufacturing method thereof
JP4269709B2 (en) Light emitting device and manufacturing method thereof
CN101315966B (en) An optical semiconductor device
EP1737050A1 (en) Light-emitting device and illuminating device
US9231166B2 (en) Light emitting device and lighting apparatus having the same
US20100109025A1 (en) Over the mold phosphor lens for an led
US20080048200A1 (en) LED with Phosphor Tile and Overmolded Phosphor in Lens
US8242519B2 (en) Package structure of light emitting diode for backlight
TWI393841B (en) Wide emitting lens for led useful for backlighting
US9634204B2 (en) Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
US7842526B2 (en) Light emitting device and method of producing same
EP1399978B1 (en) Surface-mountable radiation-emitting device
KR100880638B1 (en) Light emitting device package
EP1548851B1 (en) Semiconductor light-emitting apparatus having wavelength conversion portion and method of fabricating the same
JP5689225B2 (en) Light emitting device
EP2448028B1 (en) Light emitting apparatus and production method thereof
JP4608294B2 (en) Resin molded body, surface mounted light emitting device and method for producing them

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20060912

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060912

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060915

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071228

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100629

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100803

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101004

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101004

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101124

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110224

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20110408

A912 Removal of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20110610

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120206

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120313

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150323

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150323

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250