JP4949396B2 - 急激な金属−絶縁体転移を利用したメモリ素子及びその動作方法 - Google Patents
急激な金属−絶縁体転移を利用したメモリ素子及びその動作方法 Download PDFInfo
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- 230000007704 transition Effects 0.000 title claims description 47
- 239000012212 insulator Substances 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims description 127
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 150000002484 inorganic compounds Chemical class 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052713 technetium Inorganic materials 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 4
- 238000000761 in situ micro-X-ray diffraction Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012782 phase change material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 210000001787 dendrite Anatomy 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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Description
本発明の実験例では、基板102はAl2O3、MIT物質層106は低濃度の正孔が添加されたp型GaAs、電極108、110は積層されたCr及びCuからなる水平構造の2端子素子を使用した。
Claims (11)
- 基板と、
前記基板上に位置し、ホールドーピングによる電子のエネルギー変化により急激に金属−絶縁体転移をする金属−絶縁体転移物質層と、
前記転移物質層にコンタクトさせられ、熱により融解されて前記転移物質層に導電性経路を形成する二つの電極と、
を備えることを特徴とする急激な金属−絶縁体転移を利用したメモリ素子。 - 前記転移物質層は、酸素、炭素、半導体元素(III−V族、II−VI族)、転移金属元素、希土類元素、ランタン系元素を含む正孔が添加された無機物化合物半導体及び絶縁体、正孔が添加された有機物半導体及び絶縁体、正孔が添加された半導体、並びに、正孔が添加された酸化物半導体及び絶縁体のうち選択された少なくとも一つであることを特徴とする請求項1に記載の急激な金属−絶縁体転移を利用したメモリ素子。
- 前記電極は、Li、Be、C、Mg、Al、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Rb、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Cs、Ba、La、Hf、Ta、W、Re、Os、Ir、Pt、Au、Ti、Bi、Po、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Th、の金属、前記金属の化合物、並びに、前記金属及び前記化合物を含む酸化物のうち選択された少なくとも一つ以上の物質からなることを特徴とする請求項1に記載の急激な金属−絶縁体転移を利用したメモリ素子。
- 前記二つの電極は、相互に離隔して配置されたことを特徴とする請求項1に記載の急激な金属−絶縁体転移を利用したメモリ素子。
- 前記二つの電極のうち、一つの電極は、前記金属−絶縁体転移物質層の下面に配置され、他の電極は、前記金属−絶縁体物質層の上面に配置されていることを特徴とする請求項1に記載の急激な金属−絶縁体転移を利用したメモリ素子。
- 電子間のエネルギー変化により急激に金属−絶縁体転移をする金属−絶縁体転移物質層を基板上に形成するステップと、
前記転移物質層にコンタクトする二つの電極を形成するステップと、
前記電極に第1電圧を印加して前記電極を融解させて、前記転移物質層に導電性経路を形成するステップと、
を含むことを特徴とする急激な金属−絶縁体転移を利用したメモリ素子の動作方法。 - 前記導電性経路を形成するステップ以後に、
前記転移物質層が絶縁体に転移するように第2電圧を前記電極に印加するステップをさらに含むことを特徴とする請求項6に記載の急激な金属−絶縁体転移を利用したメモリ素子の動作方法。 - 前記第2電圧は、前記導電性経路における表面張力を低減して前記導電性経路を電気的に開放させることを特徴とする請求項7に記載の急激な金属−絶縁体転移を利用したメモリ素子の動作方法。
- 前記導電性経路をなす前記電極は、前記転移物質層の多結晶の結晶粒界に侵入することを特徴とする請求項6に記載の急激な金属−絶縁体転移を利用したメモリ素子の動作方法。
- 前記導電性経路を形成するステップは、
前記電極に前記第1電圧を印加して前記電極のうち一つの電極を融解させるステップと、
前記第1電圧を印加し続けて、前記融解した電極を前記転移物質層に流すステップと、 前記第1電圧を印加し続けて、前記融解した電極を対向する前記電極と電気的に連結させるステップと、
を含むことを特徴とする請求項6に記載の急激な金属−絶縁体転移を利用したメモリ素子の動作方法。 - 前記メモリ素子は、前記第1電圧ではオン状態を保持し、第2電圧ではオフ状態を保持することを特徴とする請求項6に記載の急激な金属−絶縁体転移を利用したメモリ素子の動作方法。
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KR10-2005-0058654 | 2005-06-30 | ||
KR20050058654 | 2005-06-30 | ||
KR10-2006-0015634 | 2006-02-17 | ||
KR1020060015634A KR100723872B1 (ko) | 2005-06-30 | 2006-02-17 | 급격한 금속-절연체 전이를 이용한 메모리소자 및 그동작방법 |
PCT/KR2006/002534 WO2007004807A1 (en) | 2005-06-30 | 2006-06-29 | Memory device using abrupt metal-insulator transition and method of operating the same |
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JP (1) | JP4949396B2 (ja) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7100516B2 (ja) | 2018-07-09 | 2022-07-13 | 川崎重工業株式会社 | アジマススラスタ |
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KR100609699B1 (ko) * | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법 |
KR100687760B1 (ko) * | 2005-10-19 | 2007-02-27 | 한국전자통신연구원 | 급격한 금속-절연체 전이를 하는 절연체 및 그 제조방법,이를 이용한 소자 |
JP4792108B2 (ja) * | 2007-03-30 | 2011-10-12 | 株式会社東芝 | 情報記録再生装置 |
US7969771B2 (en) * | 2008-09-30 | 2011-06-28 | Seagate Technology Llc | Semiconductor device with thermally coupled phase change layers |
JP5422534B2 (ja) * | 2010-10-14 | 2014-02-19 | 株式会社東芝 | 不揮発性抵抗変化素子および不揮発性抵抗変化素子の製造方法 |
US20130207069A1 (en) * | 2010-10-21 | 2013-08-15 | Matthew D. Pickett | Metal-insulator transition switching devices |
WO2014096672A1 (fr) | 2012-12-17 | 2014-06-26 | Laboratoire Francais Du Fractionnement Et Des Biotechnologies | Utilisation d'anticorps monoclonaux pour le traitement de l'inflammation et d'infections bacteriennes |
US9203022B2 (en) * | 2013-07-23 | 2015-12-01 | Globalfoundries Inc. | Resistive random access memory devices with extremely reactive contacts |
US10580976B2 (en) | 2018-03-19 | 2020-03-03 | Sandisk Technologies Llc | Three-dimensional phase change memory device having a laterally constricted element and method of making the same |
US11362275B2 (en) | 2019-05-07 | 2022-06-14 | Applied Materials, Inc. | Annealing processes for memory devices |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5278636A (en) * | 1989-09-29 | 1994-01-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Non-volatile, solid state bistable electrical switch |
US5761115A (en) | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
US5825046A (en) | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
US6333543B1 (en) * | 1999-03-16 | 2001-12-25 | International Business Machines Corporation | Field-effect transistor with a buried mott material oxide channel |
US6365913B1 (en) * | 1999-11-19 | 2002-04-02 | International Business Machines Corporation | Dual gate field effect transistor utilizing Mott transition materials |
EP1327251B1 (en) * | 2000-10-17 | 2005-08-31 | International Business Machines Corporation | Magnetic element, memory device and write head |
US6653193B2 (en) | 2000-12-08 | 2003-11-25 | Micron Technology, Inc. | Resistance variable device |
KR100433623B1 (ko) * | 2001-09-17 | 2004-05-31 | 한국전자통신연구원 | 급격한 금속-절연체 상전이를 이용한 전계 효과 트랜지스터 |
KR100503421B1 (ko) * | 2003-05-20 | 2005-07-22 | 한국전자통신연구원 | 채널 재료로서 절연체-반도체 상전이 물질막을 이용한전계 효과 트랜지스터 및 그 제조 방법 |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
KR100467330B1 (ko) * | 2003-06-03 | 2005-01-24 | 한국전자통신연구원 | 절연체 바나듐 산화막을 채널 영역으로 이용한 전계 효과트랜지스터 및 그 제조 방법 |
KR100609699B1 (ko) * | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법 |
KR100697282B1 (ko) * | 2005-03-28 | 2007-03-20 | 삼성전자주식회사 | 저항 메모리 셀, 그 형성 방법 및 이를 이용한 저항 메모리배열 |
JP2006319028A (ja) * | 2005-05-11 | 2006-11-24 | Nec Corp | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
-
2006
- 2006-02-17 KR KR1020060015634A patent/KR100723872B1/ko not_active IP Right Cessation
- 2006-06-29 CN CN2006800318287A patent/CN101253629B/zh not_active Expired - Fee Related
- 2006-06-29 JP JP2008520173A patent/JP4949396B2/ja not_active Expired - Fee Related
- 2006-06-29 WO PCT/KR2006/002534 patent/WO2007004807A1/en active Application Filing
- 2006-06-29 US US11/994,224 patent/US7791924B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7100516B2 (ja) | 2018-07-09 | 2022-07-13 | 川崎重工業株式会社 | アジマススラスタ |
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KR100723872B1 (ko) | 2007-05-31 |
KR20070003529A (ko) | 2007-01-05 |
US20090114896A1 (en) | 2009-05-07 |
CN101253629B (zh) | 2010-04-21 |
JP2009500844A (ja) | 2009-01-08 |
WO2007004807A1 (en) | 2007-01-11 |
CN101253629A (zh) | 2008-08-27 |
US7791924B2 (en) | 2010-09-07 |
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