JP4939129B2 - Probe polishing member, probe polishing method, probe card, and probe apparatus - Google Patents

Probe polishing member, probe polishing method, probe card, and probe apparatus Download PDF

Info

Publication number
JP4939129B2
JP4939129B2 JP2006185359A JP2006185359A JP4939129B2 JP 4939129 B2 JP4939129 B2 JP 4939129B2 JP 2006185359 A JP2006185359 A JP 2006185359A JP 2006185359 A JP2006185359 A JP 2006185359A JP 4939129 B2 JP4939129 B2 JP 4939129B2
Authority
JP
Japan
Prior art keywords
probe
polishing
polishing member
protrusions
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006185359A
Other languages
Japanese (ja)
Other versions
JP2008014758A (en
Inventor
俊裕 米沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006185359A priority Critical patent/JP4939129B2/en
Publication of JP2008014758A publication Critical patent/JP2008014758A/en
Application granted granted Critical
Publication of JP4939129B2 publication Critical patent/JP4939129B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

本発明は、被検査体の電気的特性検査を行う際に使用するプローブカードのプローブを研磨する研磨方法に関し、更に詳しくは、被検査体との電気的接触が向上するプローブ先端面を得ることができるプローブの研磨方法及びプローブ装置に関するものである。 The present invention relates to Migaku Ken how to polish the probe of a probe card for use in inspecting electrical characteristics of the inspection object, more particularly, the probe tip face to improve the electrical contact with the object to be inspected it relates polishing side Ho及 beauty probe apparatus of a probe that can be obtained.

プローブ装置は、通常、被検査体(例えば、ウエハ)を搬送するローダ室と、ローダ室に隣接し且つローダ室から受け取ったウエハの電気的特性検査を行うプローバ室と、を備えて構成されている。プローバ室にはウエハを載置する載置台がX、Y、Z及びθ方向に移動可能に配設され、また、載置台の上方にはウエハの電気的特性検査を行うプローブカードが配置されている。そして、載置台がX、Y、Z及びθ方向に移動して、ウエハの複数のデバイスにそれぞれ形成された複数の電極パッドとプローブカードの複数のプローブとが電気的に接触して、ウエハの各デバイスについて電気的特性検査を行う。   The probe device is usually configured to include a loader chamber that conveys an object to be inspected (for example, a wafer) and a prober chamber that is adjacent to the loader chamber and inspects the electrical characteristics of the wafer received from the loader chamber. Yes. In the prober chamber, a mounting table for mounting a wafer is disposed so as to be movable in the X, Y, Z, and θ directions, and a probe card for inspecting the electrical characteristics of the wafer is disposed above the mounting table. Yes. Then, the mounting table moves in the X, Y, Z, and θ directions, and the plurality of electrode pads respectively formed on the plurality of devices on the wafer and the plurality of probes on the probe card are in electrical contact with each other, Conduct electrical property tests on each device.

而して、電極パッドとプローブとを電気的に接触させるためには、載置台上のウエハの電極パッドとプローブとが接触した後、所定の距離だけ載置台がオーバードライブする。オーバードライブにより、図6に矢印で示すようにプローブ1の先端が電極パッドP上を移動する間に酸化膜Oを削り取ってプローブ1と電極パッドPの金属導体とを電気的に接触させて導通を取る。   Thus, in order to bring the electrode pad and the probe into electrical contact, the mounting table is overdriven by a predetermined distance after the electrode pad of the wafer on the mounting table and the probe are in contact with each other. By overdrive, the oxide film O is scraped off while the tip of the probe 1 moves on the electrode pad P as shown by an arrow in FIG. 6, and the probe 1 and the metal conductor of the electrode pad P are brought into electrical contact with each other. I take the.

しかしながら、プローブ1の先端面が図6に示すように滑らかな曲面として形成されている場合には、プローブ1と電極パッドPとの導通を取ってもプローブ1の先端面が滑らかなため、プローブ1の電極パッドPとの接触角により接触抵抗が安定しない。そのため、先端面を梨地処理したプローブが用いられる。梨地処理したプローブは、微細な多数の突起を介して比較的安定した接触抵抗を得ることができる。   However, when the tip surface of the probe 1 is formed as a smooth curved surface as shown in FIG. 6, the tip surface of the probe 1 is smooth even if the probe 1 and the electrode pad P are connected. The contact resistance is not stable due to the contact angle with one electrode pad P. For this reason, a probe whose tip surface is satin-finished is used. The satin-treated probe can obtain a relatively stable contact resistance through a large number of fine protrusions.

梨地処理の有無にかかわらずプローブの先端面には、検査を繰り返す間に電極パッドPから削り取られた金属酸化物の削り屑が付着する。この削り屑は、プローブ1の先端面と電極パッドPとの摩擦熱によりプローブ1の先端面に溶着して電極パッドPとの間の接触抵抗を増大させるため、従来から研磨部材を用いてプローブ1先端を研磨して付着物を除去している。研磨部材としては、従来から種々のものが提案されている。   Regardless of whether or not the matte finish is applied, metal oxide shavings scraped from the electrode pad P adhere to the tip surface of the probe while the inspection is repeated. Since the shavings are welded to the tip surface of the probe 1 due to frictional heat between the tip surface of the probe 1 and the electrode pad P and increase the contact resistance between the electrode pad P, a probe using a polishing member has been conventionally used. 1 The tip is polished to remove deposits. Various types of polishing members have heretofore been proposed.

例えば特許文献1では、導電性を有する母材に研磨材を付着させた研磨板が提案されている。ところが、この研磨板ではプローブ先端が研磨されて先端面が平坦になって電極パッドとの安定した接触を確保できなくなる。そこで、特許文献2では、複数回のクリーニングを繰り返してもプローブの先端が研磨されず、プローブの長寿命化を図ることができるクリーニング部材が提案されている。このクリーニング部材は、シリコンゴム又はウレタンゴムからなる弾性を有する母材にアルミナ、シリコンカーバイド又はダイヤモンド粉である微粉研磨材を混入し、全体としてウエハと同一形状、同一寸法に形成されたものである。また、特許文献2のクリーニング部材と同種の研磨部材として、特許文献3、4に記載された研磨部材がある。特許文献3に記載の研磨部材は、基材上に微粒子の研磨砥粒層を配設した研磨層と、弾性及び緩衝性を有するクッション層とからなっている。特許文献4に記載の研磨部材は、プローブの先端が削れて細くなるのを防止する研磨部材として、ベース板状に形成された第1の弾性部材と第1の弾性部材上に形成された第2の弾性部材と、第2の弾性部材上に形成された硬質粒子とバインダ材料で構成された研磨層とで構成されている。   For example, Patent Document 1 proposes a polishing plate in which an abrasive is attached to a conductive base material. However, with this polishing plate, the tip of the probe is polished and the tip surface becomes flat, and stable contact with the electrode pad cannot be ensured. Therefore, Patent Document 2 proposes a cleaning member capable of extending the life of the probe without polishing the tip of the probe even when the cleaning is repeated a plurality of times. This cleaning member is formed by mixing an abrasive base material made of silicon rubber or urethane rubber with a fine abrasive such as alumina, silicon carbide or diamond powder, and has the same shape and the same dimensions as the wafer as a whole. . Further, as a polishing member of the same kind as the cleaning member of Patent Document 2, there are polishing members described in Patent Documents 3 and 4. The polishing member described in Patent Document 3 includes a polishing layer in which a fine abrasive grain layer is disposed on a base material, and a cushion layer having elasticity and buffering properties. The polishing member described in Patent Document 4 is a first elastic member formed in a base plate shape and a first elastic member formed on the first elastic member as a polishing member that prevents the tip of the probe from being cut and thinned. 2 and an abrasive layer made of hard particles and a binder material formed on the second elastic member.

また、特許文献5では、ウエハに代えてウエハチャックに研磨板を載置し、研磨板の表面に形成された溝の上縁にプローブを斜め方向から摺接させてプローブを研磨することによって、プローブから付着物を除去するクリーニング装置が提案されている。また、特許文献6では超音波振動子を用いて針先を尖らせる研磨手段を備えた基板検査装置が提案されている。   In Patent Document 5, a polishing plate is placed on a wafer chuck instead of a wafer, and the probe is slid in an oblique direction on the upper edge of a groove formed on the surface of the polishing plate to polish the probe. A cleaning device that removes deposits from a probe has been proposed. Patent Document 6 proposes a substrate inspection apparatus provided with a polishing means for sharpening a needle tip using an ultrasonic vibrator.

また、特許文献7には、検査により磨耗した電極板の電極部の接続面に容易且つ確実に所定の凹凸を形成する電極の回復処理方法に関する技術が記載されている。この技術では、磨耗した電極板の電極部の接続面と凹凸表面を有する転写板とを圧接させ、この状態で電極板と転写板を相対的に移動させて、接続面に所定の凹凸を形成する。   Patent Document 7 describes a technique related to an electrode recovery processing method for easily and surely forming predetermined irregularities on a connection surface of an electrode portion of an electrode plate worn by inspection. In this technology, the connection surface of the electrode part of the worn electrode plate and the transfer plate having the uneven surface are pressed against each other, and in this state, the electrode plate and the transfer plate are relatively moved to form predetermined unevenness on the connection surface. To do.

実開平07−026772Japanese Utility Model 07-076772 特開平07−244074JP 07-244074 A 特開平10−300777JP-A-10-300777 特開2003−068810JP 2003-0668810 A 特開2000−019226JP 2000-019226 A 特開平05−126849JP 05-126849 特開2004−056078JP 2004-056078 A

しかしながら、従来の特許文献2〜4及び特許文献6に記載の研磨部材を用いればプローブ1先端の研磨を抑制しつつ付着物を除去することができるが、これらの場合でもプローブ1の先端は少なからず研磨されるため、例えば先端面が梨地処理されたプローブでもその処理面が平滑になり、折角の梨地処理が無駄になり、安定した接触抵抗が得られなくなる。また、これらの研磨部材で研磨されたプローブの先端は滑らかな面が形成されるため、上述したようにプローブと電極パッドとの接触抵抗が安定しない。また、特許文献5に記載の研磨板ではプローブと溝の上縁との摺接部分の付着物を除去できるが、その他の部位の付着物を十分に除去することが難しい。   However, if the conventional polishing members described in Patent Documents 2 to 4 and Patent Document 6 are used, the deposits can be removed while suppressing the polishing of the tip of the probe 1, but the tip of the probe 1 is small even in these cases. For example, even with a probe whose tip surface has been subjected to a matte finish, the treated surface becomes smooth, and the matte finish treatment is wasted, so that stable contact resistance cannot be obtained. Further, since the tip of the probe polished by these polishing members has a smooth surface, the contact resistance between the probe and the electrode pad is not stable as described above. Further, the polishing plate described in Patent Document 5 can remove the deposit on the sliding contact portion between the probe and the upper edge of the groove, but it is difficult to sufficiently remove the deposit on other portions.

また、特許文献1の研磨板の場合には上述のように母材に分散した研磨部材でプローブの先端を研磨するため、表面の研磨状態を管理することができない。また、特許文献7の転写板の場合にも特許文献1の場合と同様に転写板表面の凹凸が不規則に形成され、圧接状態での電極板と転写板の相対移動によって形成される電極板の電極部の接続面の凹凸も不規則でその転写状態を管理することができない。   Further, in the case of the polishing plate of Patent Document 1, since the tip of the probe is polished by the polishing member dispersed in the base material as described above, the polishing state of the surface cannot be managed. Also, in the case of the transfer plate of Patent Document 7, as in Patent Document 1, irregularities on the surface of the transfer plate are irregularly formed, and the electrode plate is formed by relative movement of the electrode plate and the transfer plate in a pressure contact state. The unevenness of the connection surface of the electrode part is irregular, and the transfer state cannot be managed.

本発明は、上記課題を解決するためになされたもので、プローブの先端表面の研磨状態を管理することができ、しかも研磨後にもプローブと被検査体との間に安定した導通を確保することができるプローブの研磨方法を提供することを目的としている。また、本発明は、プローブと被検査体との間で安定した導通を確保することができ、信頼性の高い検査を行うことができるプローブ装置を併せて提供することを目的としている。 The present invention has been made to solve the above-described problems, and can manage the polishing state of the tip surface of the probe and ensure stable conduction between the probe and the object to be inspected even after polishing. and its object is to provide a polishing method can be Help lobe. Further, the present invention can secure a stable connection between the probe and the inspection object is an object that can provide together Help lobe device can be performed with high reliability testing.

本発明の請求項1に記載のプローブの研磨方法は、被検査体の電極に電気的に接触させて上記被検査体の電気的特性検査を行う際に用いられるプローブカードのプローブを研磨する方法において、上記プローブを研磨する際に、四角錐形状の凸部が縦横に配列して形成され且つ隣接する凸部が底辺の一つを共有するように形成された研磨面を有する研磨部材と上記プローブとを相対的に移動させて上記プローブの先端面を上記研磨面で研磨し、上記プローブの先端面に上記凸部と実質的に同一形態の突起部を複数形成することを特徴とするものである。 The probe polishing method according to claim 1 of the present invention is a method for polishing a probe of a probe card used when an electrical property inspection of the inspection object is performed by making electrical contact with an electrode of the inspection object. In polishing the probe, the polishing member having a polishing surface formed such that the convex portions of the quadrangular pyramid are arranged vertically and horizontally, and the adjacent convex portions share one of the bottom sides, and the above The tip of the probe is polished with the polishing surface by moving the probe relative to each other, and a plurality of protrusions having substantially the same shape as the protrusion are formed on the tip of the probe. It is.

また、本発明の請求項2に記載のプローブの研磨方法は、請求項1に記載の発明において、上記研磨部材の上記研磨面と上記プローブの先端面とを圧接させる工程と、上記研磨部材と上記プローブとを圧接した状態で相対的に一方向へ移動させて上記複数の凸部により複数筋の溝部を上記プローブの先端面に形成する工程と、上記研磨部材と上記プローブの先端面とを圧接した状態で相対的に互いに上記一方向とは直交する方向へ移動させて上記複数の凸部により上記複数の溝間の筋状の突起部それぞれに複数筋の溝部を形成して残余の部分で上記凸部と実質的に同一形態の複数の四角錐状の突起部を形成する工程と、を備えたことを特徴とするものである。 The probe polishing method according to claim 2 of the present invention is the method according to claim 1 , wherein the polishing surface of the polishing member and the tip end surface of the probe are pressed against each other; A step of relatively moving the probe in one direction in a pressure-contacted manner to form a groove portion of a plurality of muscles on the tip surface of the probe by the plurality of convex portions; and the polishing member and the tip surface of the probe. A plurality of groove portions are formed in each of the line-like protrusions between the plurality of grooves by the plurality of convex portions, and the remaining portions are moved relative to each other in a direction perpendicular to the one direction while being pressed against each other. And a step of forming a plurality of quadrangular pyramidal protrusions having substantially the same shape as the convex portions.

また、本発明の請求項3に記載のプローブ装置は、複数のプローブを有するプローブカードと、上記プローブカードの複数のプローブを研磨する研磨部材と、を備え、上記複数のプローブと被検査体とを電気的に接触させて上記被検査体の電気的特性検査を行うプローブ装置において、上記研磨部材は、ダイヤモンド素材または超硬合金からなり、上記研磨部材の研磨面が縦横に配列して形成された複数の四角錐形状の凸部からなり且つ隣接する凸部が底辺の一つを共有して形成されており、上記プローブは、上記研磨部材を用いる請求項1または請求項2に記載の研磨方法によって研磨して上記プローブの先端面の形態が上記凸部と実質的に同一形態として更新可能形成されてなる複数の四角錐形状の突起部を上記先端面に有し、且つ、隣接する上記突起部は底辺の一つを共有することを特徴とするものである。 According to a third aspect of the present invention, there is provided a probe apparatus comprising: a probe card having a plurality of probes; and a polishing member for polishing the plurality of probes of the probe card; In the probe apparatus for inspecting the electrical characteristics of the object to be inspected by bringing them into electrical contact, the polishing member is made of a diamond material or a cemented carbide, and the polishing surface of the polishing member is formed by being arranged vertically and horizontally. a plurality of quadrangular pyramid has protrusions and adjacent consists protrusion is formed by sharing one base shape, the probe is polished according to claim 1 or claim 2 using the polishing member The tip surface has a plurality of quadrangular pyramid-shaped protrusions formed by renewing so that the shape of the tip surface of the probe is substantially the same as the shape of the convex portion when polished by the method. The protruding portions which is characterized in that sharing one base.

本発明によれば、プローブの先端表面の研磨状態を複数の四角錘形状の突起部が縦横に配列した状態として管理することができ、しかも研磨後にもプローブ先端面に縦横に配列して形成された複数の四角錘形状の突起部と被検査体との間に常に安定した導通を確保することができるプローブの研磨方法を提供することができる。また、本発明によれば、本発明に係る研磨部材を用いることによってプローブの先端表面の研磨状態を複数の四角錘形状の突起部が縦横に配列した状態として管理することができ、プローブ先端面に縦横に配列して形成された複数の四角錘形状の突起部と被検査体との間で常に安定した導通を確保することができ、信頼性の高い検査を行うことができるプローブ装置を併せて提供することができる。 According to the present invention, the polished state of the probe tip surface can be managed as a state in which a plurality of quadrangular pyramidal protrusions are arranged vertically and horizontally, and are formed by being arranged vertically and horizontally on the probe tip surface even after polishing. a plurality of constantly stable polishing method Help lobes can ensure continuity between the projection and the test subject during square pyramidal shape can be provided. In addition, according to the present invention, by using the polishing member according to the present invention, the polished state of the probe tip surface can be managed as a state in which a plurality of quadrangular pyramidal protrusions are arranged vertically and horizontally, and the probe tip surface a plurality of constantly stable electric connection between the projection and the test subject during a quadrangular pyramid shape can be ensured, Help lobe device can perform highly reliable test which is formed by arranging in a matrix in Can also be provided.

以下、図1〜図5に示す実施形態に基づいて本発明を説明する。   Hereinafter, the present invention will be described based on the embodiment shown in FIGS.

まず、本実施形態のプローブ装置について説明する。本実施形態のプローブ装置10は、例えば図1に示すように、被検査体であるウエハWを載置しX、Y、Z及びθ方向に移動可能な載置台11と、この載置台11の上方に配置されたプローブカード12と、を備え、制御装置の制御下で載置台11上のウエハWの電極パッド(図示せず)とプローブカード12の複数のプローブ121とのアライメントを行った後、複数のプローブ121とウエハの電極パッドとを電気的に接触させてウエハWの電気的特性検査を行うように構成されている。プローブ121と電極パッドのアライメントは、アライメント機構を介して行われる。   First, the probe device of this embodiment will be described. For example, as shown in FIG. 1, the probe apparatus 10 of the present embodiment has a mounting table 11 on which a wafer W, which is an object to be inspected, can be moved in the X, Y, Z, and θ directions. And an electrode pad (not shown) of the wafer W on the mounting table 11 and the plurality of probes 121 of the probe card 12 are aligned under the control of the control device. The electrical characteristics of the wafer W are inspected by electrically contacting the plurality of probes 121 and the electrode pads of the wafer. The alignment between the probe 121 and the electrode pad is performed via an alignment mechanism.

プローブカード12は、ヘッドプレート13の開口部に取り付けられている。アライメント機構は、図1に示すように、載置台11の側方に取り付けられた第1カメラ14と、アライメントブリッジ(図示せず)に取り付けられた第2カメラ(図示せず)と、を備え、第1カメラ14によってプローブ121を撮像し、第2カメラによってウエハWの電極パッドを撮像し、それぞれの位置データに基づいてプローブ121と電極パッドのアライメントを行う。   The probe card 12 is attached to the opening of the head plate 13. As shown in FIG. 1, the alignment mechanism includes a first camera 14 attached to the side of the mounting table 11, and a second camera (not shown) attached to an alignment bridge (not shown). The probe 121 is imaged by the first camera 14, the electrode pad of the wafer W is imaged by the second camera, and the probe 121 and the electrode pad are aligned based on the respective position data.

また、載置台11の側方には研磨部材15が配置されている。この研磨部材15は、載置台11の側方に取り付けられた支持台16上に固定されている。この支持台15は、例えば平面形状が略正方形状を呈し、昇降機構16Aを介して載置台11の載置面のやや下方とやや上方との間を昇降するようになっている。プローブ121を研磨する時には図1に実線で示すように支持台15が昇降機機構16Aを介して載置面のやや上方まで上昇し、それ以外の時には同図に一点鎖線で示すように支持台16は昇降機構16Aを介して載置面のやや下方まで下降する。   A polishing member 15 is disposed on the side of the mounting table 11. The polishing member 15 is fixed on a support table 16 attached to the side of the mounting table 11. The support base 15 has a substantially square shape, for example, and moves up and down slightly below and slightly above the mounting surface of the mounting table 11 via the lifting mechanism 16A. When the probe 121 is polished, the support base 15 rises slightly above the placement surface via the elevator mechanism 16A as shown by a solid line in FIG. 1, and otherwise the support base 16 as shown by a one-dot chain line in the figure. Is lowered to a position slightly below the placement surface via the lifting mechanism 16A.

而して、研磨部材15は、例えば図2の(a)、(b)に示すように、基材である基板15Aの一方の面(上面)が研磨面として形成されている。この研磨面には四角錐形状(ピラミッド型)の凸部15Bが縦横に複数配列して形成され、これらの凸部15Bでプローブ121を研磨する。複数の凸部15Bは、同図の(b)からも明らかなように基板15A上面に隙間なく詰めて形成されており、隣接するピラミッド型の凸部15Bはそれぞれの底辺(溝部)の一つを共有するように形成されている。凸部15Bは、例えば底辺の長さが0.5〜1.5μmで頂点の溝部からの高さが0.3〜1.0μmの大きさに形成されていることが好ましい。本実施形態では底辺の長さが1.0μmで頂点の溝部からの高さが0.5μmに形成されている。この研磨部材15は、プローブ121よりも硬い材料によって形成され、プローブ121を研磨すると共に複数の凸部15Bが切削刃として機能するように形成されている。従って、研磨部材15の材料は、プローブ121より硬い材料であれば特に制限されない。このような材料としては、例えばダイヤモンド素材、超硬合金(例えば、タングステンカーバイト)等が好ましく用いられる。   Thus, in the polishing member 15, for example, as shown in FIGS. 2A and 2B, one surface (upper surface) of the substrate 15A as a base material is formed as a polishing surface. On this polished surface, a plurality of quadrangular pyramid-shaped (pyramid-type) convex portions 15B are arranged in the vertical and horizontal directions, and the probe 121 is polished by these convex portions 15B. The plurality of convex portions 15B are formed so as to be packed in the upper surface of the substrate 15A without any gap, as is clear from FIG. 5B, and the adjacent pyramid-shaped convex portions 15B are one of the bottom sides (groove portions). Is formed to share. For example, it is preferable that the convex portion 15B has a bottom length of 0.5 to 1.5 μm and a height from the apex groove portion of 0.3 to 1.0 μm. In this embodiment, the length of the base is 1.0 μm and the height from the apex groove is 0.5 μm. The polishing member 15 is formed of a material harder than the probe 121, and is formed so that the probe 121 is polished and the plurality of convex portions 15B function as cutting blades. Accordingly, the material of the polishing member 15 is not particularly limited as long as the material is harder than the probe 121. As such a material, for example, a diamond material, a cemented carbide (for example, tungsten carbide) or the like is preferably used.

研磨部材15は、上述のように凸部15Bが切削刃としての機能を有するため、例えば図3の(a)に矢印で示すように移動して研磨面がプローブ先端に圧接された状態でプローブ121の先端面をX、Y方向に研磨することにより、同図の(b)に示すようにプローブ121の先端面に縦横に交差した溝部121Aを形成し、残余の部分で複数の突起部121Bを形成することができる。従って、研磨部材15を用いてプローブ121の先端面に図4に示すように複数の突起部121Bを設けことができる。そして、このプローブ121を図5に示すように電極パッドPに押圧するだけで複数の突起部121Bが電極パッドPの酸化膜Oを突き破って電極パッドPの金属導体と直接接触し、プローブ121と電極パッドPとの導通を取ることができる。   Since the convex portion 15B has a function as a cutting blade as described above, the polishing member 15 moves as indicated by an arrow in FIG. 3A, for example, so that the polishing surface is pressed against the probe tip. By polishing the tip surface of 121 in the X and Y directions, as shown in FIG. 5B, a groove 121A that intersects the tip surface of the probe 121 vertically and horizontally is formed, and a plurality of protrusions 121B are formed in the remaining portion. Can be formed. Accordingly, the polishing member 15 can be used to provide a plurality of protrusions 121B on the tip surface of the probe 121 as shown in FIG. Then, by simply pressing the probe 121 against the electrode pad P as shown in FIG. 5, the plurality of protrusions 121B penetrate the oxide film O of the electrode pad P and directly contact the metal conductor of the electrode pad P. Conductivity with the electrode pad P can be obtained.

次に、本実施形態の研磨部材15を用いてプローブ121を研磨する方法について図3を参照しながら説明する。   Next, a method for polishing the probe 121 using the polishing member 15 of the present embodiment will be described with reference to FIG.

まず、アライメント機構を介して載置台11に付設された研磨部材15とプローブ121とのアライメントを行った後、図3の(a)に示すように載置台11が移動して研磨部材15がプローブ121の真下にくる。引き続き、同図に白抜きの矢印で示すように載置台11が上昇して研磨部材15とプローブ121とが接触し、更に所定量だけオーバードライブして研磨部材15とプローブ121の先端面とが圧接した状態で、載置台11が例えばX方向へ移動する。これにより、同図の(b)に示すように研磨部材15の複数の凸部15Bによって断面が三角形状の筋状の溝部121Aがプローブ121の先端面に複数筋に渡って形成される。その後、載置台11が一旦下降した後、再度上昇し、オーバードライブして研磨部材15とプローブ121の先端面が圧接した状態で、載置台11がY方向へ移動する。これにより、研磨部材15の複数の凸部15Bによって先に形成された筋状の溝部121Aと直交する方向に溝部121Aが形成される。そして、図4に示すように互いに直交する溝部121Aの間に残った部分に複数の四角錐状の突起部121Bが形成される。   First, after the polishing member 15 attached to the mounting table 11 and the probe 121 are aligned via the alignment mechanism, the mounting table 11 moves and the polishing member 15 moves to the probe as shown in FIG. It ’s just under 121. Subsequently, as shown by the white arrow in the figure, the mounting table 11 is raised and the polishing member 15 and the probe 121 come into contact with each other. The mounting table 11 moves in the X direction, for example, in the pressed state. As a result, as shown in FIG. 5B, a plurality of convex portions 15B of the polishing member 15 form a stripe-shaped groove portion 121A having a triangular cross section across the plurality of streaks on the tip surface of the probe 121. Thereafter, after the mounting table 11 is lowered, it is lifted again, overdriven, and the mounting table 11 moves in the Y direction in a state where the polishing member 15 and the tip surface of the probe 121 are in pressure contact. Thus, the groove 121A is formed in a direction orthogonal to the streaky groove 121A previously formed by the plurality of convex portions 15B of the polishing member 15. Then, as shown in FIG. 4, a plurality of quadrangular pyramidal protrusions 121B are formed in portions remaining between the mutually orthogonal groove portions 121A.

プローブ121の先端面に形成された突起部121Bは、研磨部材15の凸部15Bと実質的に同一形態に形成されている。つまり、研磨部材15によってプローブ121の先端面を研磨する度毎に、プローブ121の先端面に研磨部材15の凸部15Bと実質的に同一形態の突起部121Bが複数転写された状態になる。これら複数の突起部121Bは、図4に示すように、縦横に配列して形成され、隣接する突起部121Bは底辺(溝部121A)の一つを共有している。この突起部121Bは、上記凸部15Bと同様に、例えば底辺の長さが0.5〜1.5μmで頂点の溝部121Aからの高さが0.3〜1.0μmの大きさになっている。本実施形態では底辺の長さが1.0μmで頂点の溝部121Aからの高さが0.5μmに形成されている。   The protrusion 121 </ b> B formed on the tip surface of the probe 121 is formed in substantially the same form as the protrusion 15 </ b> B of the polishing member 15. That is, each time the tip surface of the probe 121 is polished by the polishing member 15, a plurality of protrusions 121 </ b> B having substantially the same shape as the convex portions 15 </ b> B of the polishing member 15 are transferred to the tip surface of the probe 121. As shown in FIG. 4, the plurality of protrusions 121B are formed to be arranged vertically and horizontally, and adjacent protrusions 121B share one of the bottom sides (grooves 121A). Similar to the protrusion 15B, the protrusion 121B has a bottom length of 0.5 to 1.5 μm and a height from the apex groove 121A of 0.3 to 1.0 μm, for example. Yes. In the present embodiment, the length of the base is 1.0 μm and the height from the apex groove 121A is 0.5 μm.

次に、先端面に複数の突起部121Bを有するプローブ121を用いるウエハWの検査について図1、図5を参照しながら説明する。   Next, an inspection of the wafer W using the probe 121 having a plurality of protrusions 121B on the front end surface will be described with reference to FIGS.

まず、載置台11上にウエハWを載置し、アライメント機構を介して載置台11上のウエハWの電極パッドとプローブカード12の複数のプローブ121とのアライメントを行った後、載置台11をX、Y方向へ移動させると、プローブカード12の複数のプローブ121の真下へウエハWの所定の電極パッドが位置する。この状態で載置台11が上昇し、ウエハWの電極パッドと複数のプローブ121が接触する。更に載置台11がオーバードライブして複数のプローブ121とそれぞれに対応する電極パッドとが圧接すると、各プローブ121それぞれの複数の突起部121Bが図5に示すように電極パッドPの酸化膜Oを破って突き刺さる。   First, the wafer W is mounted on the mounting table 11, and the electrode pad of the wafer W on the mounting table 11 and the plurality of probes 121 of the probe card 12 are aligned via the alignment mechanism, and then the mounting table 11 is moved. When moved in the X and Y directions, a predetermined electrode pad of the wafer W is positioned directly below the plurality of probes 121 of the probe card 12. In this state, the mounting table 11 is raised, and the electrode pad of the wafer W and the plurality of probes 121 come into contact with each other. Further, when the mounting table 11 is overdriven and the plurality of probes 121 and the corresponding electrode pads are pressed into contact with each other, the plurality of protrusions 121B of each probe 121 form the oxide film O of the electrode pad P as shown in FIG. Break and pierce.

電極パッドPの酸化膜Oを突き破ったプローブ121の複数の突起部121Bは、それぞれ図5に示すように電極パッドPの金属導体と直接接触してプローブ121と電極パッドPとが導通する。複数の突起部121Bは、図4に示すようにプローブ121の先端面全面に渡って形成されているため、金属導体との接触面積が大きく、安定した導通状態を確保することができプローブ121と電極パッドPとの間で信号の送受信を確実に行うことができ、信頼性の高い検査を実施することができる。また、プローブ121は、複数の突起部121Bが電極パッドPに突き刺さるだけで、削り取らないため、電極パッドPへのダメージがない。この状態で信号の授受を完了すると、載置台11が下降した後、載置台11がウエハWのインデックス送りを行って、ウエハW内の全てのデバイスについて電気的特性検査を行う。   The plurality of protrusions 121B of the probe 121 that have broken through the oxide film O of the electrode pad P are in direct contact with the metal conductor of the electrode pad P, as shown in FIG. Since the plurality of protrusions 121B are formed over the entire tip surface of the probe 121 as shown in FIG. 4, the contact area with the metal conductor is large, and a stable conduction state can be secured. Signals can be transmitted / received to / from the electrode pad P reliably, and a highly reliable inspection can be performed. In addition, since the probe 121 only pierces the electrode pad P with the plurality of protruding portions 121B and does not scrape, there is no damage to the electrode pad P. When the transmission / reception of the signal is completed in this state, after the mounting table 11 is lowered, the mounting table 11 performs index feeding of the wafer W and performs an electrical characteristic inspection on all devices in the wafer W.

検査中にプローブ121の先端面に酸化膜Oの一部が付着して複数の突起部121Bの谷間が金属酸化物によって埋められると、電極パッドPとの接触抵抗が大きくなり、検査の信頼性が低下する。この場合には研磨部材15を用いてプローブ121を研磨する。   If a part of the oxide film O adheres to the tip surface of the probe 121 during the inspection and the valleys of the plurality of protrusions 121B are filled with the metal oxide, the contact resistance with the electrode pad P increases, and the inspection reliability is increased. Decreases. In this case, the probe 121 is polished using the polishing member 15.

それには、載置台11に付設された研磨部材15とプローブカード12の複数のプローブ121とのアライメントを行った後、図1に示すように載置台11を介して研磨部材15と複数のプローブ121とを圧接させた後、載置台11をX方向に移動させて、プローブ121の先端面を研磨して金属酸化物を除去すると共に新たに筋状の溝部121Aを形成する。次いで、載置台11を下降させて再度研磨部材15と複数のプローブ121とを圧接した後、Y方向に移動させて、筋状の溝部121Aと直交する溝部121Aを形成する。これにより残余の部分で図4に示す四角錐状の突起部121Bがマトリックス状に配列された状態で形成され、新たな突起部121Bへと更新される。更新された突起部121Bによって、プローブ121と電極パッドPとの導通状態が回復し、信頼性の高い検査を行えるようになる。   For this purpose, after the polishing member 15 attached to the mounting table 11 is aligned with the plurality of probes 121 of the probe card 12, the polishing member 15 and the plurality of probes 121 are interposed via the mounting table 11 as shown in FIG. Then, the mounting table 11 is moved in the X direction, the tip surface of the probe 121 is polished to remove the metal oxide, and a streaky groove 121A is newly formed. Next, the mounting table 11 is lowered and the polishing member 15 and the plurality of probes 121 are again brought into pressure contact with each other, and then moved in the Y direction to form a groove 121A orthogonal to the streak-shaped groove 121A. Thereby, the remaining pyramidal projections 121B shown in FIG. 4 are formed in a matrix and updated to a new projection 121B. Due to the updated protrusion 121B, the conduction state between the probe 121 and the electrode pad P is restored, and a highly reliable inspection can be performed.

以上説明したように本実施形態によれば、研磨部材15は、上面に研磨面を有する基材15Aからなり、研磨面は縦横に配列して形成された複数の四角錐形状の凸部15Bからなり、且つ、隣接する凸部15Bが底辺の一つを共有するため、この研磨部材15を用いてプローブ121の先端面を研磨すると、プローブ121の先端面に研磨部材15の凸部15Bと実質的に同一形態の突起部121Bを複数形成することができる。従って、プローブ121先端面の研磨状態を一定の形態に管理することができ、しかも研磨後にはプローブ121先端の複数の突起部121Bを介してウエハWとの間に安定した導通を確保することができる。   As described above, according to the present embodiment, the polishing member 15 is made of the base material 15A having the polishing surface on the upper surface, and the polishing surface is made up of the plurality of quadrangular pyramid-shaped convex portions 15B formed in the vertical and horizontal directions. Since the adjacent convex portion 15B shares one of the bottom sides, when the tip surface of the probe 121 is polished using the polishing member 15, the tip portion of the probe 121 is substantially the same as the convex portion 15B of the polishing member 15. Thus, a plurality of protrusions 121B having the same shape can be formed. Therefore, the polishing state of the tip surface of the probe 121 can be managed in a constant form, and after polishing, stable conduction with the wafer W can be ensured with the plurality of protrusions 121B at the tip of the probe 121. it can.

また、本実施形態によれば、研磨部材15の基材15Aは、プローブ121より硬い物質によって形成されているため、研磨部材15によってプローブ121の先端面を研磨する度にプローブ121の先端面に複数の突起部121Bを確実に形成することができる。また、研磨部材15の凸部15Bはプローブ121の先端面に縦横に複数配置される大きさであるため、研磨部材15による研磨によりプローブ121の先端面に複数の突起部121Bを確実に形成することができ、プローブ121先端の複数の突起部121Bを介してウエハWとの導通が安定し、信頼性の高い検査を行うことができる。   Further, according to the present embodiment, since the base material 15A of the polishing member 15 is formed of a material harder than the probe 121, each time the tip surface of the probe 121 is polished by the polishing member 15, The plurality of protrusions 121B can be reliably formed. In addition, since the plurality of convex portions 15B of the polishing member 15 are sized to be arranged vertically and horizontally on the tip surface of the probe 121, a plurality of protrusions 121B are reliably formed on the tip surface of the probe 121 by polishing with the polishing member 15. In addition, the conduction with the wafer W is stabilized via the plurality of protrusions 121B at the tip of the probe 121, and a highly reliable inspection can be performed.

更に、研磨部材15の凸部15Bの高さは、プローブ12が電気的に接触する電極パッドPの酸化膜Oの厚みを超え且つ電極パッドPの厚みを超えない高さであるため、プローブ121の先端面に形成された突起部121Bによって酸化膜Oを突き破って、電極パッドPを損傷させることなくプローブ121先端の複数の突起部121Bを介してウエハWとの導通を確実に取ることができる。   Furthermore, the height of the convex portion 15B of the polishing member 15 is a height that exceeds the thickness of the oxide film O of the electrode pad P with which the probe 12 is in electrical contact and does not exceed the thickness of the electrode pad P. The oxide film O is pierced by the projection 121B formed on the tip surface of the electrode, and the electrical connection with the wafer W can be ensured through the plurality of projections 121B at the tip of the probe 121 without damaging the electrode pad P. .

また、本実施形態によれば、プローブカード12は、プローブ121の先端面に上述した突起部121Bを複数有するため、複数の突起部121Bを電極パッドPに押圧するだけでウエハWとの導通を取ることができ、従来のように電極パッドPを削り取ることがなく電極パッドPへのダメージを格段に軽減することができる。   Further, according to the present embodiment, since the probe card 12 has the plurality of protrusions 121B described above on the distal end surface of the probe 121, the conduction to the wafer W can be achieved only by pressing the plurality of protrusions 121B against the electrode pad P. It is possible to remove the damage to the electrode pad P without scraping off the electrode pad P as in the prior art.

尚、本発明は上記各実施形態に何等制限されるものではなく、必要に応じて各構成要素を適宜変更することができる。また、上記実施形態では、プローブ121の突起部121Bは、研磨部材15によって形成されたものについて説明したが、研磨部材以外のものによって形成されたものであっても良い。また、突起部121Bの形態が研磨部材によって形成された四角錐状のものを縦横に配列されたものについて説明したが、研磨部材以外の手段によって形成されたもので、四角錐以外の形態の突起部が配列されたものであっても良い。この場合には突起部がプローブと別の材料によって形成されていても良い。   In addition, this invention is not restrict | limited at all to said each embodiment, Each component can be changed suitably as needed. In the above embodiment, the protrusion 121B of the probe 121 has been described as being formed by the polishing member 15. However, the protrusion 121B may be formed by something other than the polishing member. Moreover, although the shape of the protrusion 121B has been described with respect to a quadrangular pyramidal shape formed by a polishing member arranged vertically and horizontally, it is formed by means other than the polishing member, and the protrusion having a shape other than the quadrangular pyramid The parts may be arranged. In this case, the protrusion may be formed of a material different from that of the probe.

本発明は、半導体ウエハ等の被検査体の電気的特性検査を行うプローブ装置に好適に利用することができる。   INDUSTRIAL APPLICABILITY The present invention can be suitably used for a probe apparatus that performs an electrical property inspection of an object to be inspected such as a semiconductor wafer.

本発明のプローブ装置の一実施形態を示す要部断面図である。It is principal part sectional drawing which shows one Embodiment of the probe apparatus of this invention. (a)、(b)はそれぞれ図1に示すプローブ装置に用いられる研磨部材を示す図で、(a)はその斜視図、(b)はその平面図である。(A), (b) is a figure which shows the grinding | polishing member used for the probe apparatus shown in FIG. 1, respectively, (a) is the perspective view, (b) is the top view. (a)は図2に示す研磨部材を用いてプローブの先端面を研磨する状態を示す側面図、(b)は研磨部材によって研磨されたプローブの先端部の要部を破断して示す側面図である。(A) is a side view showing a state in which the tip end surface of the probe is polished using the polishing member shown in FIG. 2, and (b) is a side view showing the main part of the tip end portion of the probe polished by the polishing member in a broken state. It is. 図3の(b)に示すプローブの先端面を示す平面図である。It is a top view which shows the front end surface of the probe shown to (b) of FIG. 図4に示すプローブとウエハの電極パッドとが電気的に接続された状態の一部を破断して示す側面図である。FIG. 5 is a side view showing a part of a state where the probe shown in FIG. 4 and the electrode pad of the wafer are electrically connected to each other. 従来のプローブと電極パッドとが電気的に接続された状態の一部を破断して示す側面図である。It is a side view which fractures | ruptures and shows a part of the state in which the conventional probe and the electrode pad were electrically connected.

符号の説明Explanation of symbols

10 プローブ装置
11 載置台
12 プローブカード
15 研磨部材
15A 基材
15B 凸部
121 プローブ
121A 溝部
121B 突起部
DESCRIPTION OF SYMBOLS 10 Probe apparatus 11 Mounting base 12 Probe card 15 Polishing member 15A Base material 15B Convex part 121 Probe 121A Groove part 121B Protrusion part

Claims (3)

被検査体の電極に電気的に接触させて上記被検査体の電気的特性検査を行う際に用いられるプローブカードのプローブを研磨する方法において、上記プローブを研磨する際に、四角錐形状の凸部が縦横に配列して形成され且つ隣接する凸部が底辺の一つを共有するように形成された研磨面を有する研磨部材と上記プローブとを相対的に移動させて上記プローブの先端面を上記研磨面で研磨し、上記プローブの先端面に上記凸部と実質的に同一形態の突起部を複数形成することを特徴とするプローブの研磨方法。   In a method of polishing a probe of a probe card used when an electrical property inspection of the test object is performed by making electrical contact with an electrode of the test object, a quadrangular pyramid-shaped convex is used when the probe is polished. The tip of the probe is moved by relatively moving the polishing member having the polishing surface formed so that the portions are arranged vertically and horizontally and the adjacent convex portion share one of the bases and the probe. A probe polishing method, wherein polishing is performed on the polishing surface, and a plurality of protrusions having substantially the same shape as the protrusions are formed on a tip surface of the probe. 上記研磨部材の上記研磨面と上記プローブの先端面とを圧接させる工程と、上記研磨部材と上記プローブとを圧接した状態で相対的に一方向へ移動させて上記複数の凸部により複数筋の溝部を上記プローブの先端面に形成する工程と、上記研磨部材と上記プローブの先端面とを圧接した状態で相対的に互いに上記一方向とは直交する方向へ移動させて上記複数の凸部により上記複数の溝間の筋状の突起部それぞれに複数筋の溝部を形成して残余の部分で上記凸部と実質的に同一形態の複数の四角錐状の突起部を形成する工程と、を備えたことを特徴とする請求項1に記載のプローブの研磨方法。 The polishing surface of the polishing member and the tip end surface of the probe are pressed against each other, and the polishing member and the probe are relatively moved in one direction while being pressed against each other, and a plurality of streaks are formed by the plurality of convex portions. The step of forming a groove on the tip surface of the probe and the polishing member and the tip surface of the probe are in pressure contact with each other in a direction orthogonal to the one direction so that the plurality of protrusions Forming a plurality of streak-like projections on each of the streaky projections between the plurality of grooves and forming a plurality of quadrangular pyramid-like projections having substantially the same shape as the projections in the remaining portions; The probe polishing method according to claim 1 , wherein the probe polishing method is provided. 複数のプローブを有するプローブカードと、上記プローブカードの複数のプローブを研磨する研磨部材と、を備え、上記複数のプローブと被検査体とを電気的に接触させて上記被検査体の電気的特性検査を行うプローブ装置において、上記研磨部材は、ダイヤモンド素材または超硬合金からなり、上記研磨部材の研磨面が縦横に配列して形成された複数の四角錐形状の凸部からなり且つ隣接する凸部が底辺の一つを共有して形成されており、上記プローブは、上記研磨部材を用いる請求項1または請求項2に記載の研磨方法によって研磨して上記プローブの先端面の形態が上記凸部と実質的に同一形態として更新可能形成されてなる複数の四角錐形状の突起部を上記先端面に有し、且つ、隣接する上記突起部は底辺の一つを共有することを特徴とするプローブ装置。 A probe card having a plurality of probes; and a polishing member for polishing the plurality of probes of the probe card, wherein the plurality of probes and the object to be inspected are brought into electrical contact with each other so that the electrical characteristics of the object to be inspected In the probe device for inspecting, the polishing member is made of a diamond material or a cemented carbide, and the polishing surface of the polishing member is formed of a plurality of quadrangular pyramid-shaped protrusions formed by arranging vertically and horizontally, and adjacent protrusions. The portion is formed so as to share one of the bottom sides, and the probe is polished by the polishing method according to claim 1 or 2 using the polishing member, and the tip end surface of the probe has the convex shape. A plurality of quadrangular pyramid-shaped protrusions formed in an updatable manner in substantially the same form as the portion, and the adjacent protrusions share one of the bases. Probe apparatus according to.
JP2006185359A 2006-07-05 2006-07-05 Probe polishing member, probe polishing method, probe card, and probe apparatus Expired - Fee Related JP4939129B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006185359A JP4939129B2 (en) 2006-07-05 2006-07-05 Probe polishing member, probe polishing method, probe card, and probe apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006185359A JP4939129B2 (en) 2006-07-05 2006-07-05 Probe polishing member, probe polishing method, probe card, and probe apparatus

Publications (2)

Publication Number Publication Date
JP2008014758A JP2008014758A (en) 2008-01-24
JP4939129B2 true JP4939129B2 (en) 2012-05-23

Family

ID=39071916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006185359A Expired - Fee Related JP4939129B2 (en) 2006-07-05 2006-07-05 Probe polishing member, probe polishing method, probe card, and probe apparatus

Country Status (1)

Country Link
JP (1) JP4939129B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011064664A (en) * 2009-09-16 2011-03-31 Isao Kimoto Contact probe
JP6874583B2 (en) 2017-08-02 2021-05-19 東京エレクトロン株式会社 Probe device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59134070A (en) * 1983-01-24 1984-08-01 本田技研工業株式会社 Step device for seat type motorcycle
JPS63103883A (en) * 1986-10-17 1988-05-09 東芝セラミツクス株式会社 Ceramic file
EP1268130A1 (en) * 2000-03-31 2003-01-02 Lam Research Fixed abrasive linear polishing belt and system using the same
JP2004111441A (en) * 2002-09-13 2004-04-08 Fujitsu Ltd Semiconductor inspecting device and cleaning member
JP2005265720A (en) * 2004-03-19 2005-09-29 Nec Corp Electric contact structure, and forming method therefor, and element inspection method

Also Published As

Publication number Publication date
JP2008014758A (en) 2008-01-24

Similar Documents

Publication Publication Date Title
KR101514856B1 (en) Apparatuses, device, and methods for cleaning tester interface contact elements and support hardware
KR100458330B1 (en) Probe card device and probe for use therein
JP4745814B2 (en) Probe polishing material
US20080001612A1 (en) Probes with self-cleaning blunt skates for contacting conductive pads
JP2511806B2 (en) Probe tip cleaning material
JP2001013168A (en) Thin film probe constituting method
US7182672B2 (en) Method of probe tip shaping and cleaning
AU2017410946A1 (en) Semiconductor wire bonding machine cleaning device and method
JP4939129B2 (en) Probe polishing member, probe polishing method, probe card, and probe apparatus
JP2012198024A (en) Cleaning pad for test probe and method for cleaning test probe
JP2006339472A (en) Apparatus and method for cleaning probe card pin
JP2006186133A (en) Device and method for inspecting semiconductor device
JP3061619B1 (en) How to measure probe contact resistance
JP5640760B2 (en) Test probe card, test apparatus, and method for manufacturing semiconductor device
JP2009115659A (en) Probe card
JP2007096190A (en) Method for polishing needle point of probe card, and probe device
TW200414393A (en) Semiconductor device having pad
US20150369842A1 (en) Probe card for testing semiconductor wafers
JP4210002B2 (en) Contact probe and contact pin polishing method
JPH05164785A (en) Probe for semiconductor integrated circuit tester
JP2011064664A (en) Contact probe
JP2002319605A (en) Method of inspecting semiconductor device
Stalnaker et al. Controlling Contact Resistance with Probe Tip Shape and Cleaning Recipe Optimization
JP2001050979A (en) Probe card
JP3072423U (en) Probe tip cleaning sheet

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090604

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110602

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110614

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110810

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110920

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111115

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120221

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120224

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150302

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4939129

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees