JP4928712B2 - Thin film transistor array substrate and liquid crystal display device including the same - Google Patents

Thin film transistor array substrate and liquid crystal display device including the same Download PDF

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JP4928712B2
JP4928712B2 JP2003420084A JP2003420084A JP4928712B2 JP 4928712 B2 JP4928712 B2 JP 4928712B2 JP 2003420084 A JP2003420084 A JP 2003420084A JP 2003420084 A JP2003420084 A JP 2003420084A JP 4928712 B2 JP4928712 B2 JP 4928712B2
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data line
film
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JP2004199074A (en
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東 奎 金
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三星電子株式会社Samsung Electronics Co.,Ltd.
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1288Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F2001/136231Active matrix addressed cells for reducing the number of lithographic steps
    • G02F2001/136236Active matrix addressed cells for reducing the number of lithographic steps using a gray or half tone lithographic process

Abstract

A gate wire including a gate line and a gate electrode is formed on an insulating substrate of a TFT array panel. A semiconductor pattern made of amorphous silicon is formed on the gate insulating layer covering the gate wire. A data wire including a data line, a source electrode, and a drain electrode is formed on the semiconductor pattern or the gate insulating layer covering the gate wire. A part of the semiconductor pattern extends under the data line, and a light blocking member overlapping the semiconductor pattern under the data line is formed using the same layer as the gate wire. The light blocking member is to prevent light incident upon the substrate from a backlight from entering the amorphous silicon layers; therefore, the stripes of different brightness and waterfall phenomenon in which the stripes move up and down can be removed in an LCD using a backlight driven by a rectangular wave of ON/OFF signals outputted from inverter.

Description

  The present invention relates to a thin film transistor array substrate and a liquid crystal display device including the same.

  The liquid crystal display device is one of the most widely used flat panel display devices, and is composed of two substrates on which electrodes are formed and a liquid crystal layer inserted between them. A display device that adjusts the amount of light transmitted by rearranging liquid crystal molecules in a layer. Among liquid crystal display devices, what is currently mainstream is a liquid crystal display device having electrodes formed on two substrates, each having a thin film transistor that switches a voltage applied to the electrodes.

  One substrate of such a liquid crystal display device includes a signal line including a gate line for transmitting a gate signal or a data line for transmitting an image signal, a pixel electrode for transmitting an image signal applied through the data line, and A thin film transistor or the like for controlling an image signal transmitted to the pixel electrode of each pixel through a gate signal is formed. On the other substrate, a color filter for realizing images of various colors and a black matrix for blocking light leakage between pixels and preventing a decrease in contrast ratio are formed.

  At this time, hydrogenated amorphous silicon is mainly used as the semiconductor layer of the thin film transistor. However, since the amorphous silicon layer under the wiring cannot be removed during the manufacturing process, in order to prevent disconnection of the wiring. It is desirable to leave an amorphous silicon layer below the data line.

However, light emitted from a backlight, which is a light source of the liquid crystal display device, enters the amorphous silicon layer, generates holes and electrons in the amorphous silicon layer, and generates a light leakage current. Such a light leakage current causes the characteristics of the liquid crystal display device to deteriorate. In particular, such a light leakage current changes an image signal transmitted through the data line. As a result, the pixel voltage transmitted to the pixel electrode is changed to cause a phenomenon in which a band having a luminance difference moves up and down during image display, thereby degrading image quality.
(Prior art documents)
(Patent Literature)
(Patent Document 1) US Patent Application Publication No. 2002/0080295 Specification

  An object of the present invention is to provide a thin film transistor array substrate capable of improving the display characteristics of a liquid crystal display device and a liquid crystal display device including the same.

  In the thin film transistor array substrate and the liquid crystal display device including the same according to the present invention, a light blocking film is formed under the amorphous silicon layer located under the data line.

In the thin-film transistor array substrate for a liquid crystal display device for reference invention, a gate wiring including a gate electrode connected to the gate line and the gate line on an insulating substrate top is formed. A data line including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode with the gate electrode as the center is formed on the gate insulating film covering the gate line. . Here, a semiconductor layer is formed on the gate insulating film of the gate electrode, a part of the semiconductor layer extends to the lower part of the data line, and the upper part of the substrate is the same layer as the gate wiring and below the data line. An overlapping light blocking film is formed. A pixel electrode electrically connected to the drain electrode is formed on the substrate.

  At this time, the width of the light blocking film overlapping the semiconductor layer is preferably at least 60% or more as compared with the width of the semiconductor layer. The semiconductor layer under the data line can be configured to have the same width as the data line or a wider width than the data line. Here, the semiconductor layer excluding the channel portion between the source electrode and the drain electrode can be configured in the same pattern as the data wiring, and a part of the semiconductor layer is exposed outside the periphery of the data wiring. You can also.

  The data wiring is formed on the lower film and the upper part of the lower film, and can include an upper film having a pattern different from that of the lower film.

A thin film transistor array substrate according to the present invention includes an insulating substrate, a gate wiring formed on the insulating substrate and including a gate line and a gate electrode connected to the gate line, a gate insulating film covering the gate wiring, a gate line, Data lines including intersecting data lines, source electrodes connected to the data lines, drain electrodes facing the source electrodes around the gate electrodes, and upper portions of the gate insulating film, part of which extends to the lower portions of the data lines The pixel layer electrically connected to the drain electrode, and the data line is formed of a light shielding film formed on the same layer as the gate line. The drain film includes a lower film and an upper film formed on the upper part of the lower film, and the drain electrode is removed at the portion connected to the pixel electrode, and the lower film has irregularities

Here, the width of the light blocking film overlapping with the semiconductor layer is preferably at least 60% or more as compared with the width of the semiconductor layer.

In addition, the semiconductor layer below the data line is preferably the same as or wider than the data line.

The semiconductor layer excluding the channel portion between the source electrode and the drain electrode is preferably formed in the same pattern as the data wiring.

Moreover, it is preferable that a part of the semiconductor layer is exposed outside the periphery of the data wiring.

  The backlight used as the light source of the liquid crystal display device including the thin film transistor array substrate according to the present invention is driven by an inverter that outputs an on / off rectangular wave signal.

  In the present invention, the light blocking film that blocks the light of the backlight incident on the amorphous silicon layer located below the data line is disposed to improve the display characteristics of the liquid crystal display device. In particular, in a liquid crystal display device using a backlight driven by an inverter, it is possible to prevent a band having a luminance difference from occurring when an image is displayed, and to eliminate a waterfall phenomenon in which the band moves.

  The embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily implement the embodiments. However, the present invention can be realized in various forms and is not limited to the embodiments described herein.

  In the drawings, the thickness is shown enlarged to clearly represent the various layers and regions. Throughout the specification, similar parts are denoted by the same reference numerals. When a layer, film, region, plate, etc. is “on top” of another part, this is not limited to being “immediately above” other parts, and there is another part in the middle Including cases. Conversely, when a part is “just above” another part, it means that there is no other part in the middle.

Hereinafter, a thin film transistor array substrate and a liquid crystal display device including the same according to embodiments of the present invention will be described in detail with reference to the drawings.
(Reference example)
First, the structure of a thin film transistor array substrate for a liquid crystal display device according to a first reference example of the present invention will be described in detail with reference to FIGS. FIG. 1 is a layout view of a thin film transistor array substrate for a liquid crystal display device according to a reference example of the present invention. FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. Shown together.

  In the thin film transistor array substrate 100, a gate line 121 including a lower film 201 made of a single aluminum (Al) and an upper film 202 having good contact characteristics with molybdenum or chromium and other substances on a lower insulating substrate 110 is tapered. It is formed with a structure. The gate line 121 receives an external gate signal through the end portion 125. The gate line 121 includes a gate electrode 123 of a thin film transistor. In addition, the gate line 121 overlaps with the storage capacitor conductive pattern 177 connected to the pixel electrode 190 to be formed later, and constitutes a storage capacitor that improves the charge storage capability of the pixel. Here, if the charge storage capability is insufficient, a maintenance wiring separated from the gate wiring can be added. Further, a floating light blocking film 129 is formed on the insulating substrate 110 so as to extend in the vertical direction. The light blocking film 129 overlaps with the amorphous silicon layers 150 and 163 located below the data line 171 to be formed later, and the backlight light incident from the bottom of the substrate 110 is reflected by the amorphous silicon layers 150 and 163. Has a function of blocking incident light.

  On the substrate 110, a gate insulating film 140 made of silicon nitride (SiNx) or the like covers the gate line 121 and the light blocking film 129.

  A semiconductor layer 150 made of a semiconductor such as amorphous silicon is formed on the gate insulating film 140 of the gate electrode 125. Resistive contact layers 163 and 165 made of a material such as n + hydrogenated amorphous silicon doped with a high concentration of silicide or n-type impurities are formed on the semiconductor layer 150, respectively. In this case, the amorphous silicon layers 150 and 163 extend in the vertical direction along the data line 171 to prevent the data line 171 formed thereafter from being disconnected due to a step, and the light blocking film 129. It overlaps with. Here, the light blocking film 129 is wider than the amorphous silicon layers 150 and 163, but may have a narrow width. The width where the light blocking film 129 and the amorphous silicon layer overlap is preferably at least 60% or more of the width of the amorphous silicon layers 150 and 163. In addition, the light blocking film 129 is located between the pixel electrodes 190 in the pixel regions formed adjacent to each other, but preferably does not overlap the pixel electrode 190.

  A plurality of data lines 171 and drain electrodes 175 made of molybdenum or a molybdenum alloy are formed on the resistive contact layers 163 and 165 or the gate insulating film 140. The data line 171 extends in the vertical direction and intersects the gate line 121 to define a pixel region, and overlaps the light blocking film 129 and the amorphous silicon layers 150 and 163 extending in the vertical direction. A portion of the data line 171 extending to the upper portion of the resistive contact layer 163 is a source electrode 173 of the thin film transistor. An end 179 connected to one end of the data line 171 receives an external image signal. Further, in the same layer as the data line 171, a storage capacitor conductor pattern 177 that overlaps with the gate line 121 and is electrically connected to the pixel electrode 190 to be formed later is formed in order to improve the storage capacity. Has been.

  Here, like the gate line 121, the data line 171 and the drain electrode 175 preferably include a conductive film of aluminum, an aluminum alloy, or silver or a silver alloy, and are formed of a multilayer film including a conductive film of chromium, molybdenum, or molybdenum alloy. Can be configured. Further, it may be composed of a three-layer film of molybdenum or molybdenum alloy conductive film / aluminum conductive film / molybdenum or molybdenum alloy conductive film.

  A protective film 180 of a low dielectric constant insulating material including silicon nitride or a-Si: C: O: H is formed on the data line 171 and the drain electrode 175 and the semiconductor layer 150 not covered with the data line 171 and the drain electrode 175. Here, the protective film 180 may further include an organic insulating film made of an organic material having excellent planarization characteristics and photosensitivity. In such a case, it is preferable that the organic insulating film does not directly cover the semiconductor layer 150 exposed between the source and drain electrodes 173 and 175. In addition, it is preferable to completely remove the organic insulating material from the pad portion where the end portions 125 and 179 of the gate line 121 and the data line 171 are located. In such a structure, the gate driving integrated circuit and the data driving integrated circuit are directly mounted on the thin film transistor substrate in order to transmit the scanning signal and the video signal to the gate line 121 and the data line 171 in the pad portion, respectively. This is more effective when applied to an on-glass type liquid crystal display device.

  The protective film 180 is formed with contact holes 185, 187, and 189 that expose the drain electrode 175, the storage capacitor conductive pattern 177, and the data line end 179, respectively. A contact hole 182 exposing the portion 125 is formed.

  The upper portion of the protective film 180 is electrically connected to the drain electrode 175 through the contact hole 185, and is formed of ITO (indium tin oxide) or IZO (indium zinc oxide), which is a transparent conductive material, located in the pixel region. A pixel electrode 190 is formed. At this time, the pixel electrode 190 preferably overlaps with the data line 171 or the gate line 121 in order to ensure the aperture ratio. However, the pixel electrode 190 does not overlap the data line 171 or the gate line 121 in order to minimize interference of signals transmitted through the data line 171 and the gate line 121 in consideration of the dielectric constant of the protective film 180. You can also Further, the auxiliary gate member 92 and the auxiliary data member 97 are formed on the protective film 180 and connected to the ends 125 and 179 of the gate line and the data line through the contact holes 182 and 189, respectively. Here, the auxiliary gate and data members 92 and 97 are not essential for protecting the end portions 125 and 179 of the gate line and the data line, respectively.

  On the counter substrate 200 facing the thin film transistor array substrate 100, a black matrix (not shown) having an opening in the pixel region is formed on the upper insulating substrate 210. A red, green, and blue color filter (not shown) is formed in each pixel region, and a common electrode that transmits a common voltage to drive the liquid crystal molecules facing the pixel electrode 190 is provided. 210 is formed on the entire surface.

The liquid crystal display device including the thin film transistor array substrate 100 according to the first reference example emits light incident from the opposite side of the counter substrate 200 with the counter substrate 200 facing the thin film transistor substrate 100 and the thin film transistor array substrate 100 as a center. A backlight 500 is included. At this time, the backlight 500 is driven by a rectangular wave of an on / off signal output through an inverter.

Unlike the first reference example , in the case of a liquid crystal display device having no light blocking film 129, when the backlight is turned on, light emitted from the backlight is incident on the amorphous silicon layers 150 and 163. To do. Incident light from the backlight generates electrons and holes in the amorphous silicon layers 150 and 163, which are recombined with charges transmitted through the data line 171 when an image signal is applied. On the other hand, when the backlight is turned off, electrons and holes are not generated in the amorphous silicon layers 150 and 163, and only a delay of an image signal transmitted through the data line 171 occurs. Accordingly, the image signal transmitted through the data line 171 is changed by turning on / off the backlight, and the pixel voltage transmitted to the subsequent pixel electrode 190 is changed. As a result, a band having a luminance difference is generated during image display. Further, when the frequency of the inverter that drives the backlight, that is, the backlight on / off frequency and the frame frequency, that is, the frequency at which the gate signals are sequentially applied to all the gate lines 121 are not synchronized, the luminance difference is obtained. A waterfall phenomenon occurs in which a strip with sway moves up and down.

The liquid crystal display device including the thin film transistor array substrate according to the first reference example includes the light blocking film 129 below the amorphous silicon layers 150 and 163 formed along the data lines 171, and the backlight is turned on. Then, the light of the backlight incident on the amorphous silicon layers 150 and 163 can be blocked. Therefore, the light blocking film 129 prevents the generation of electrons or holes due to the backlight in the amorphous silicon layers 150 and 163, and a band having a luminance difference or a waterfall phenomenon occurs during image display. This can be prevented and the image quality of the liquid crystal display device can be improved.

On the other hand, in the thin film transistor array substrate for a liquid crystal display device according to the first reference example , the gate wiring 121 or the data line 171 contains aluminum having a low specific resistance, and can be applied to a large liquid crystal display device. Display characteristics can be improved.

Hereinafter, a method of manufacturing the thin film transistor array substrate according to the reference example will be described in detail with reference to FIGS. 3A to 6B, FIGS.

  First, as shown in FIGS. 3a and 3b, an aluminum lower film 201 and a chromium or molybdenum or molybdenum alloy upper film 202 are sequentially stacked on the glass substrate 110 in thicknesses of about 2000 to 4000 mm and 500 to 2000 mm, respectively. Then, the upper film 202 and the lower film 201 are patterned together by a photo etching process using a mask to form the gate line 121 and the light blocking film 29. At this time, the gate line 121 and the light blocking film 129 are formed in a tapered structure having a taper angle in the range of 20 to 80 °. The etching process is preferably wet etching. In the case where the upper film 202 is made of molybdenum or a molybdenum alloy, patterning can be performed under one etching condition using the same etching solution.

Next, as shown in FIGS. 4a and 4b, a gate insulating film 140 made of silicon nitride (SiN x ), a semiconductor layer 150 made of amorphous silicon (a-Si: H), and doped amorphous Three layers of a silicon layer (n + a-Si: H) 160 are successively stacked, and the semiconductor layer 150 and the doped amorphous silicon layer 160 are patterned by a patterning process using a mask to obtain a gate electrode. A semiconductor layer 150 and a resistive contact layer 160 are formed on the gate insulating film 140 facing the layer 125. At this time, the amorphous silicon layers 150 and 160 are patterned at one time by dry etching, so that the data lines 171 formed thereafter are prevented from being disconnected due to the steps of the amorphous silicon layers 150 and 160. And formed in the vertical direction along the data line 171. However, as described above, when backlight light driven using an inverter is incident on the amorphous silicon layers 150 and 160, the characteristics of the liquid crystal display device are degraded. In an embodiment of the present invention, in order to prevent backlight light from entering the amorphous silicon layers 150 and 160, light is blocked at the lower portions of the amorphous silicon layers 150 and 160 located under the data lines 171. A film 129 is formed.

  Next, as shown in FIGS. 5a to 5b, a conductive film made of aluminum or aluminum alloy, or a conductive film made of chromium or molybdenum or molybdenum alloy is laminated to a thickness of about 2000 mm, and a photolithography process using a mask is performed. By patterning, a data line 171 intersecting with the gate line 121, a drain electrode 175, and a storage capacitor conductor pattern 177 are formed in a taper structure.

  At this time, the data wiring 171 can be configured to include an aluminum conductive film. In such a case, the aluminum conductive film is located in the center, and a molybdenum or molybdenum alloy conductive film is formed above and below the aluminum conductive film. Is preferably formed.

  Next, the doped amorphous silicon layer pattern 160 that is not covered with the data wiring 171 and the drain electrode 175 is etched and separated on both sides around the gate electrode 123, while the doped amorphous silicon layers on both sides are separated. The semiconductor layer pattern 150 between 163 and 165 is exposed. Next, oxygen plasma treatment is preferably performed to stabilize the exposed surface of the semiconductor layer 150.

  Next, as shown in FIGS. 6a and 6b, a low dielectric constant such as an a-Si: C: O film or an a-Si: O: F film is formed by stacking silicon nitride or by PECVD (plasma enhanced chemical vapor deposition). A protective film 180 is formed by depositing a CVD film. Next, a contact hole 182 exposing the gate line end 125, the drain electrode 175, the data line end 179, and the storage capacitor conductor pattern 177 is patterned together with the gate insulating film 140 by a photoetching process using a mask, 185, 189 and 187 are formed. At this time, if the aluminum conductive film is exposed from the portions exposed through the contact holes 182, 185, 189, 187, the contact characteristics with the ITO or IZO pixel electrode 190 to be formed later are taken into consideration. It is preferable to remove the conductive film.

  Next, as shown in FIGS. 1 and 2, a transparent conductive material of ITO or IZO is deposited to a thickness of about 900 mm, the mask is patterned by a photo etching process, and the drain electrode 175 and the sustain electrode 175 are maintained through the contact holes 187 and 185. The auxiliary gate member 92 and the auxiliary data member 97 are formed to be connected to the ends 125 and 179 of the gate line and the data line through the pixel electrode 190 connected to the capacitor pattern 177 and the contact holes 182 and 189, respectively.

The embodiment of the present invention has been described based on the method of forming the semiconductor layer and the data line by a photolithography process using different masks. However, in order to minimize the manufacturing cost, a thin film transistor array substrate for a liquid crystal display device in which a semiconductor layer and a data line are formed by a photo etching process using a single photosensitive film pattern is also used to form an amorphous layer below the data line. A reference example having a light blocking film with a porous silicon layer left is also applicable. This will be described in detail with reference to the drawings.

First, a unit pixel structure of a thin film transistor substrate for a liquid crystal display device according to a second reference example will be described in detail with reference to FIGS.

FIG. 7 is a layout view of a thin film transistor substrate for a liquid crystal display device according to a second reference example , and FIGS. 8 and 9 are cross sections taken along lines VIII-VIII ′ and IX-IX ′ of the thin film transistor substrate shown in FIG. FIG. 8 and 9, the counter substrate is omitted.

First, a plurality of gate lines 121 including a conductive film made of aluminum are formed on the insulating substrate 110 in a tapered structure. In the same layer as the gate line 121, the gate is connected to the common electrode voltage input to the common electrode 220 (see FIG. 2) of the counter substrate 200 (see FIG. 2) or the thin film transistor in the adjacent pixel row in parallel with the gate line 121. A storage electrode line 131 is formed which is electrically connected to a previous gate line 121 for transmitting a signal and receives a voltage such as a previous gate voltage. The storage electrode line 131 overlaps with a drain electrode 175 connected to a pixel electrode 190, which will be described later, and constitutes a storage capacitor that improves the charge storage capability of the pixel, but is generated by the overlap of the pixel electrode 190, which will be described later, and the gate line 121. If the holding capacity is sufficient, it may not be formed. Further, the same layer as the gate line 121 overlaps with the amorphous silicon layers 152 and 163 located below the data line 171 to be formed later, and enters the amorphous silicon layers 152 and 163 from the lower portion of the substrate 110. A light blocking film 129 for blocking the light to be formed is formed. Here, unlike the first reference example , the light blocking film 129 has a narrower width than the amorphous silicon layers 152 and 163. As in the first reference example , the width where the light blocking film 129 and the amorphous silicon layers 152 and 163 overlap is preferably at least 60% or more of the width of the amorphous silicon layers 152 and 163. .

A gate insulating film 140 made of silicon nitride (SiN x ) or the like is formed on the gate line 121 and the storage electrode line 131 to cover the gate line 121, the storage electrode line 131, and the light blocking film 129.

  A semiconductor pattern 152 made of polycrystalline silicon or amorphous silicon is formed on the gate insulating film 140. Resistive contact layer patterns or intermediate layer patterns 163 and 165 made of amorphous silicon or the like doped with n-type or p-type impurities such as phosphorus (P) at a high concentration are formed on the semiconductor pattern 152. ing.

  On the resistive contact layer patterns 163 and 165, a data line 171 and a drain electrode 175 including a conductive film made of chromium, molybdenum, or a molybdenum alloy or a conductive film made of aluminum or an aluminum alloy are formed in a tapered structure. The data line 171 extends in the vertical direction and intersects with the gate line 121, and includes a data line end portion 179 that receives an image signal applied from the outside and a source electrode 173 of a thin film transistor. The source electrode 173 is positioned on the opposite side of the drain electrode 175 of the thin film transistor that overlaps the storage electrode line 131 with respect to the channel portion (C) of the thin film transistor.

  The contact layer patterns 163 and 165 serve to lower the contact resistance between the lower semiconductor pattern 152 and the upper data line 171 and drain electrode 175, and have the same configuration as the data line 171 and drain electrode 175. . That is, the data line portion intermediate layer pattern 163 is the same as the data line 171, and the drain electrode intermediate layer pattern 163 is the same as the drain electrode 173.

  On the other hand, except for the channel portion C of the thin film transistor, the semiconductor pattern 152 has the same pattern as the data line 171 and the drain electrode 175 and the underlying resistive contact layer patterns 163 and 165. Specifically, in the channel portion (C) of the thin film transistor, the data line portion 171, particularly the source electrode 173 and the drain electrode 175 are separated, and the data line portion intermediate layer 163 and the drain electrode contact layer pattern 165 are also separated. ing. However, the thin film transistor semiconductor patterns 152 are connected without being separated here to generate a thin film transistor channel. Here, the semiconductor pattern 152 is exposed outside the periphery of the data line 171, and the semiconductor pattern 152 positioned below the data line 171 has a width wider than that of the light blocking film 129.

  The data line 171 and the drain electrode 175 and the upper portion of the semiconductor layer 152 not covered by these include an organic insulating film made of an organic material having a low dielectric constant or a low dielectric constant PECVD film similar to the first embodiment. A protective film 180 is formed. The protective film 180 has contact holes 189 and 185 exposing the data line end 179 and the drain electrode 175, and further has a contact hole 182 exposing the gate line end 125 together with the gate insulating film 140.

  A pixel electrode 190 that receives an image signal from a thin film transistor and generates an electric field together with an electrode on the upper plate is formed on the protective film 180. The pixel electrode 190 is made of a transparent conductive material such as ITO or IZO, or a conductive material having reflectivity such as aluminum or silver, and is physically and electrically connected to the drain electrode 175 through the contact hole 185. The image signal is transmitted. Here, even though the protective film 180 includes an organic insulating film having a low dielectric constant, and the pixel electrode 190 overlaps with the adjacent gate line 121 and the data line 171 to increase the aperture ratio, signal interference is hardly caused due to the overlap. Does not occur. The light blocking film 129 can be configured to overlap the pixel electrodes 190 in the adjacent pixel regions and block light leaking between the adjacent pixel regions. Meanwhile, an auxiliary gate member 92 and an auxiliary data member 97 are formed on the end portions 125 and 179 of the gate line and the data line, respectively, and are connected to the end portions 125 and 179 through the contact holes 182 and 189, respectively. These complement and protect the adhesion between the end portions 125 and 179 of the gate line and the data line and the external circuit device, and are not essential but applicability is optional.

In the thin film transistor array substrate according to the second reference example , similarly to the first reference example , when the backlight is turned on, the light incident on the amorphous silicon layer 163 below the data line 171 is reflected. A light blocking film 129 for blocking is provided. Therefore, it is possible to prevent the occurrence of a band having a luminance difference during image display and the occurrence of a waterfall phenomenon in which the band moves, thereby improving the image quality of the liquid crystal display device.

  Hereinafter, a method for manufacturing a thin film transistor array substrate for a liquid crystal display device having the structure of FIGS. 7 to 9 will be described in detail with reference to FIGS. 7 to 9 and FIGS. 10a to 16c.

  First, as shown in FIGS. 10a to 10c, a conductive film of aluminum, aluminum, or a conductive film of molybdenum, molybdenum alloy, or chromium is stacked, and patterned by a photo etching process using a mask to maintain the gate line 121. The electrode line 131 and the light blocking film 129 are formed with a taper structure.

  Next, as shown in FIGS. 11a and 11b, the gate insulating film 140 made of silicon nitride, the semiconductor layer 150 of undoped amorphous silicon, and the intermediate layer 160 of doped amorphous silicon are formed by chemical vapor deposition. Are continuously deposited to a thickness of 1500 to 5000 mm, 500 to 2000 mm, and 1400 to 600 mm, respectively. Next, a conductive layer 170 of a conductive material made of molybdenum or a molybdenum alloy or a conductive material containing aluminum is deposited to a thickness of 1500 to 3000 by a sputtering method or the like, and then a photosensitive film 210 is formed thereon to a thickness of 1 to 2 μm. Apply to.

  Thereafter, the photosensitive film 210 is irradiated with light through a mask and then developed to form photosensitive film patterns 212 and 214 as shown in FIGS. 12b and 12c. At this time, the data wiring portion A, that is, the data line 171 is formed in the channel portion C of the thin film transistor, that is, the first portion 214 located between the source electrode 173 and the drain electrode 175 in the photosensitive film patterns 212 and 214. The thickness is made thinner than that of the second portion 212 located in the portion, and all the photosensitive film in the other portion B is removed. Here, the ratio between the thickness of the photosensitive film 214 remaining in the channel portion C and the thickness of the photosensitive film 212 remaining in the data wiring portion A needs to be varied depending on process conditions in an etching process described later. The thickness of the first portion 214 is preferably 1/2 or less of the thickness of the second portion 212, and for example, 4000 mm or less is preferable.

  As described above, there are various methods for varying the thickness of the photosensitive film depending on the position. In order to adjust the light transmission amount of the area A, a slit or lattice pattern is mainly formed. Is used. At this time, it is preferable that the line width of the pattern located between the slits and the interval between the patterns, that is, the width of the slit is smaller than the resolution of the exposure device used at the time of exposure. When using a translucent film, it is possible to use thin films with different transmittances or thin films with different thicknesses in order to adjust the transmittance during mask fabrication.

  In this way, when the photosensitive film is irradiated with light through the mask, the polymer is completely decomposed in the part directly exposed to the light, but the light irradiation amount is in the part where the slit pattern or the translucent film is formed. Since the amount is small, the polymer is in an incompletely decomposed state, and the polymer is hardly decomposed at the portion blocked by the light-shielding curtain. Next, if the photosensitive film is developed, only the polymer whose molecules are not decomposed is left, and a thinner photosensitive film can be left in the central part where the irradiation light is less than the part where no light is irradiated. At this time, if the exposure time is long, all molecules are decomposed, so care must be taken not to do so.

  The thin photosensitive film 214 is exposed to a normal mask which is divided into a portion where light can be completely transmitted and a portion where light cannot be completely transmitted, using a photosensitive film made of a reflowable material. Then, development and reflow may be performed so that a part of the photosensitive film flows in a portion where the photosensitive film does not remain.

  Next, the photosensitive film pattern 214 and the underlying film, that is, the conductor layer 170, the intermediate layer 160, and the semiconductor layer 150 are etched. At this time, the data line and the film under the data line remain as they are in the data wiring portion A, and only the semiconductor layer needs to remain in the channel portion C. In the other portion B, all of the three layers 170, 160, 150 are removed, and the gate insulating film 140 needs to be exposed.

  First, as shown in FIGS. 13a and 13b, the exposed conductor layer 170 in the other portion B is removed, and the underlying intermediate layer 160 is exposed. In this process, both dry etching and wet etching can be used. At this time, the conductive layer 170 is preferably etched and the photosensitive film patterns 212 and 214 are preferably not etched. However, in the case of dry etching, it is difficult to find the condition that only the conductive layer 170 is etched and the photosensitive film patterns 212 and 214 are not etched. good. At that time, the thickness of the first portion 214 is made thicker than in the case of wet etching so that the first portion 214 is not removed and the lower conductor layer 170 is not exposed.

  Thus, as shown in FIGS. 13a and 13b, only the conductor layers of the channel portion C and the data wiring portion A, that is, the source / drain conductor pattern 178 remain. The conductor layer 170 in the other part B is all removed, and the intermediate layer 160 under it is exposed. The remaining conductor pattern 178 is the same as the data line 171 and the drain electrode 175 except that the source and drain electrodes 173 and 175 are connected without being separated. Further, when dry etching is used, the photosensitive film patterns 212 and 214 are also etched to a certain degree.

Next, as shown in FIGS. 14a and 14b, the exposed intermediate layer 160 of the other part B and the semiconductor layer 150 therebelow are simultaneously removed together with the first part 214 of the photosensitive film by a dry etching method. At this time, the photoresist patterns 212 and 214, the intermediate layer 160, and the semiconductor layer 150 (the semiconductor layer and the intermediate layer have almost no etching selectivity) are simultaneously etched, and the gate insulating film 140 is not etched. There is a need to do. In particular, it is preferable to perform etching under conditions where the etching ratios of the photosensitive film patterns 212 and 214 and the semiconductor layer 150 are substantially the same. For example, if a mixed gas of SF 6 and HCl or a mixed gas of SF 6 and O 2 is used, the two films can be etched to substantially the same thickness. When the etching ratios for the photoresist patterns 212 and 214 and the semiconductor layer 150 are the same, the thickness of the first portion 214 is equal to or smaller than the combined thickness of the semiconductor layer 150 and the intermediate layer 160. preferable.

  In this way, as shown in FIGS. 14a and 14b, the first portion 214 of the channel portion C is removed, and the source / drain conductor pattern 178 is exposed. Then, the intermediate layer 160 and the semiconductor layer 150 in the other part B are removed, and the underlying gate insulating film 140 is exposed. On the other hand, the second portion 212 of the data wiring portion A is also etched to reduce the thickness. At this stage, the semiconductor pattern 152 is completed. Reference numeral 168 denotes an intermediate layer pattern below the source / drain conductor pattern 178.

  Next, the photosensitive film remaining on the surface of the source / drain conductor pattern 178 in the channel portion C is removed by ashing. In this way, a part of the thickness and width of the photosensitive film pattern 212 is removed, and the peripheral portions of the source / drain conductor pattern 178 and the intermediate layer pattern 168 and the semiconductor pattern 152 thereunder are exposed to the photosensitive film. The pattern 212 is exposed to the outside.

Next, as shown in FIGS. 15a and 15b, the source / drain conductor pattern 178 and the underlying source / drain intermediate layer pattern 168 of the channel portion C are removed by etching. At this time, the etching can be performed only on the source / drain conductor pattern 178 and the intermediate layer pattern 168 only by dry etching. The source / drain conductor pattern 178 may be wet-etched using an etchant, and the intermediate layer pattern 168 may be dry-etched. In the former case, it is preferable to perform etching under conditions where the etching selectivity of the source / drain conductor pattern 178 and the intermediate layer pattern 168 is large. This is because it is difficult to find the etching end point when the etching selectivity is not large, and it is not easy to adjust the thickness of the semiconductor pattern 152 remaining in the channel portion C. Examples of the etching gas used when etching the intermediate layer pattern 168 and the semiconductor pattern 152 include a mixed gas of CF 4 and HCl and a mixed gas of CF 4 and O 2. When CF 4 and O 2 are used, the semiconductor pattern 152 can remain in a uniform thickness. At this time, as shown in FIG. 15b, a part of the semiconductor pattern 152 may be removed to reduce the thickness, and the second portion 212 of the photosensitive film pattern is also etched to a certain thickness at this time. Etching at this time needs to be performed under the condition that the gate insulating film 140 is not etched, and the photosensitive film pattern is thick so that the second portion 212 is not etched and the underlying data line 171 and drain electrode 175 are not exposed. It is preferable.

  As described above, as shown in FIG. 12a, the drain electrode 175 is separated from the data line 171, and the underlying contact layer patterns 163 and 165 are completed.

  Finally, the photosensitive film second portion 212 remaining in the data wiring portion A is removed. However, the second portion 212 may be removed after removing the channel portion C source / drain conductor pattern 178 and before removing the underlying intermediate layer pattern 168.

  As described above, wet etching and dry etching can be performed alternately, or only dry etching can be used. In the latter case, since only one type of etching is used, the process is relatively simple, but it is difficult to find appropriate etching conditions. In the former case, it is relatively easy to find the etching conditions, but the process is more complicated than the latter.

  After forming the data line 171 and the drain electrode 175 in this manner, as shown in FIGS. 16A to 16C, an organic insulating material is stacked to form the protective film 180, and the protective film 180 is formed using a mask. Etching is performed together with the gate insulating layer 140 to form contact holes 182, 189 and 185 exposing the ends 125 and 179 of the gate line and the data line and the drain electrode 175, respectively.

  Next, as shown in FIGS. 7 to 9, ITO or IZO having a thickness of 500 to 1000 mm is deposited, wet-etched with a mask, and the pixel electrode 190 connected to the drain electrode 175, the gate line and the data line, respectively. The auxiliary gate member 92 and the auxiliary data member 97 connected to the end portions 125 and 179 are formed.

In the second reference example , the data line 171 and the underlying contact layer patterns 163, 165, and 167 and the semiconductor patterns 152 and 157 are formed using a single mask. The drain electrode 175 is separated, and the manufacturing process can be simplified.

In the first and second reference examples , the case where the amorphous silicon layers 150 and 152 are wider and narrower than the data line 171 has been described. However, the amorphous silicon layer has the same width as the data line. You can also. This will be specifically described with reference to the drawings.

FIG. 17 is a thin film transistor array substrate for a liquid crystal display device according to the first embodiment of the present invention, and FIG. 18 is a cross-sectional view taken along line XVIII-XVIII ′ of the thin film transistor array substrate shown in FIG.

  On the insulating substrate 110, a gate line 121 including a conductive film made of silver, a silver alloy having low resistance, or a metal material of aluminum or aluminum alloy, and a common electrode voltage input to the common electrode on the upper plate or an adjacent pixel row A storage electrode line 131 that receives an external application of a gate voltage or the like transmitted to the thin film transistor is formed in a taper structure having a taper angle in the range of 30 to 70 °. A light blocking film 129 is formed on the substrate 110 in the vertical direction, as in the first and second embodiments.

  A semiconductor layer pattern 152 made of a semiconductor such as amorphous silicon and resistive contact layers 163 and 165 are formed on the gate insulating film 140 of the gate electrode 125 in a tapered structure having a taper angle in a range of 30 to 80 °. ing.

  On the resistance contact layers 163 and 165, a lower film 701 made of a barrier metal such as molybdenum (Mo), molybdenum-tungsten (MoW) alloy, chromium (Cr), tantalum (Ta), or titanium (Ti). Then, the data line 171 and the drain electrode 175 including the upper film 702 made of low resistance silver, silver alloy, aluminum (Al), or aluminum alloy (Al alloy) are formed.

  At this time, the upper film 702 made of aluminum or aluminum alloy in the data wiring 171 is removed at the contact portion, that is, at the drain electrode 175 and a part of the data line end portion 179. The contact portion from which the upper film 702 has been removed has good contact characteristics with other substances, and the lower film 701 made of a barrier metal for preventing aluminum or aluminum alloy from diffusing into the silicon layers 150, 163, 165. Is exposed, the boundary line of the upper film 702 is located above the lower film 701, and the data line 171 includes a lower film 701 and an upper film 702 having patterns with different patterns.

  Here, the semiconductor layer pattern 152 has the same pattern as the resistive contact layer patterns 163 and 165 except for the thin film transistor portion where the gate electrode 123, the drain electrode 175, and the source electrode 173 are located. . In particular, the semiconductor pattern 152 under the data line 171 has the same width as the data line 171. This is because the data line 171 or a photosensitive film pattern for patterning the data line 171 is used as an etching mask during the manufacturing process. This is because the semiconductor pattern 152 is patterned.

  A contact portion is formed on an organic material having excellent planarization characteristics or a low dielectric constant insulating material including an a-Si: C: O film or an a-Si: O: F film or a protective film including silicon nitride. The contact holes 185 and 189 exposing the drain electrode 175 and the lower film 701 of the data line end 179 are formed, and the contact hole 182 exposing the gate line end 125 together with the gate insulating film 140 is formed. At this time, the surface of the lower film 701 exposed through the contact holes 185, 187, and 189 has a stepped uneven structure, and the protective film 180 contacts the lower film 701 at the periphery of the contact holes 185 and 189 without an undercut structure. The lower film 701 exposed through the contact holes 185 and 189 is covered.

Similar to the first or second reference example , the pixel electrode 190, the auxiliary gate member 92, and the auxiliary data member 97 are formed on the protective film 180. The pixel electrode 190 and the auxiliary data member 97 are in contact with the uneven structure of the drain electrode 175 and the data member 179 exposed through the contact hole.

The light blocking film 129 is also formed on the thin film transistor array substrate according to the first embodiment of the present invention, and the effects of the first and second reference examples can be obtained. The ITO film or the IZO film 190, 92, 97 is in contact with only the lower film 701 on the drain electrode 175 and the lower film 701 of the data line end 179 at the contact portion, and the contact resistance of the contact portion can be ensured low. And the characteristics of the display device can be improved.

  Here, transparent IZO or ITO is given as an example of the material of the pixel electrode 190, but it can also be formed of a transparent conductive polymer or the like. In the case of a reflective liquid crystal display device, an opaque conductive material is used. It doesn't matter.

Hereinafter, a method of manufacturing the thin film transistor array substrate for a liquid crystal display according to the first embodiment of the present invention will be described in detail with reference to FIGS. 17 and 18, and FIGS. 19a to 23b.

  First, as shown in FIGS. 19A and 19B, a gate wiring including a gate line 121 and a storage electrode line 131 is formed on the glass substrate 110 in a tapered structure.

  Next, as shown in FIGS. 20a and 20b, a three-layer film of a gate insulating film 140, a semiconductor layer 150 made of amorphous silicon, and a doped amorphous silicon layer 160 is successively stacked. Here, the gate insulating film 140 is preferably formed by laminating silicon nitride in a range of 250 to 400 ° C. and a thickness of about 2000 to 5000 mm. Next, a barrier having good contact characteristics with other materials, such as ITO or IZO, is prevented from being diffused by the semiconductor layer 150 or the doped amorphous silicon layer 160 thereon. A lower film 701 made of molybdenum, molybdenum alloy or chromium among metals is laminated to a thickness of about 500 mm, and a target of an Al—Nd alloy containing 2 at% Nd of low resistance aluminum or aluminum alloy is used. The upper film 702 is sequentially laminated at 150 ° C. to a thickness of about 2500 mm. Next, the upper film 702 and the lower film 701 are patterned by a photo etching process using a data wiring mask to form a data line 171 and a drain electrode 175. Here, the upper film 702 and the lower film 701 can all be etched by wet etching, the upper film 702 can be etched by wet etching, and the lower film 701 can be etched by dry etching. When the lower film 701 is molybdenum or a molybdenum alloy film, the lower film 701 and the upper film 702 can be patterned under one etching condition.

  Next, as shown in FIGS. 21a and 21b, exposure and development are performed by a photographic process using a semiconductor pattern mask to form a semiconductor pattern photosensitive film pattern 210. At this time, the photosensitive film pattern 210 is formed so as not to cover at least the data line end 179 and the drain electrode 175 used as a contact portion of the data wiring. Next, the upper film 702 containing aluminum is first etched using the photoresist pattern 210 as an etching mask, and the data line end 179 and the lower film 701 of the drain electrode 175 are exposed at the contact portion. At this time, the photosensitive film pattern 210 is left at least partly on the data line end 179 and the drain electrode 175 used as the contact part, and the upper part on the contact part exposed through the contact holes 185, 187, and 189 formed thereafter. The film 702 is left. This is to prevent the surface of the lower film 701 from being damaged if the lower film 701 is completely exposed at the contact portion during the subsequent dry etching process. At this time, the upper film 702 left at the contact portion between the data line end portion 179 and the drain electrode 175 is preferably smaller than the contact holes 185 and 189 of the protective film 180 to be formed later and in an island shape. Next, the exposed doped amorphous silicon layer 160 and the semiconductor layer 150 are etched using the data wiring 171 and the drain electrode 175 and the photoresist pattern 210 as an etching mask to complete the semiconductor layer pattern 152. The doped amorphous silicon layer 160 is left on top. Here, since the semiconductor layer pattern 152 remains only under the data line 171 and the drain electrode 175 and in a portion not covered with the photosensitive film pattern 210, the semiconductor layer pattern 152 has at least a larger area than the data line 171 and the drain electrode 175. Here, since the upper film 702 containing aluminum is to be removed at the contact portion using the photosensitive film pattern 210 as an etching mask, the photosensitive film pattern 210 includes at least a data line end 179 and a drain electrode which are part of the data wiring. It is necessary not to cover a part of 175. In the channel portion between the source electrode 173 and the drain electrode 175, it is necessary to cover at least the channel portion in order to prevent the semiconductor layer from being etched.

  Here, the data line 171 and the drain electrode 175 are formed of a double film, but may be formed of a single film. The photosensitive film pattern 210 may be formed to completely cover the data line 171.

  Next, the photoresist pattern 210 is removed, and the doped amorphous silicon layer pattern 160 that is not covered with the data line 171 and the drain electrode 175 is etched as shown in FIG. While separating, the semiconductor layer pattern 152 between the doped amorphous silicon layers 163 and 165 on both sides is exposed. Dry etching is applied as a method for etching the doped amorphous silicon layer pattern 160. When the lower film 701 is completely exposed at the contact portion between the data line end 179 and the drain electrode 175 during dry etching. Since the entire surface may be damaged, as described above, after the upper film 702 is left at the contact portion between the data line end portion 179 and the drain electrode 175, dry etching is performed.

  Next, as shown in FIGS. 23a and 23b, a protective film 180 is formed and patterned by dry etching together with the gate insulating film 140, and a lower film of the gate line end 125, the drain electrode 175, and the data line end 179 is formed. Contact holes 182, 185, 187 and 189 are formed to expose 701. At this time, the contact holes 185 and 189 are formed by patterning the protective film 180 by dry etching. At the time of dry etching, the contact holes 185 and 189 are contact portions of the data line end 179 and the drain electrode 175 exposed through the contact holes 185 and 189. Since the lower film 701 exposed without being covered by the upper film 702 is partially etched and the portion covered by the upper film 702 is not etched, the lower film 701 at the contact portion has an uneven structure having a step.

Next, the upper film 702 made of aluminum or aluminum alloy exposed through the contact holes 185 and 189 is removed by etching the entire surface of the aluminum, and finally the drain electrode 175 is formed through the contact hole 185 as shown in FIGS. The auxiliary gate member 92 and the auxiliary data member 97 respectively connected to the lower film 701 of the end portions 125 and 179 of the gate lines and data lines through the contact holes 182 and 189 and the pixel electrodes 190 connected to the lower film 701, respectively. Each form. The target for forming the IZO films 190, 92, and 97 in the embodiment of the present invention uses a product called IDIXO (indiumx-metal oxide) of Idemitsu Corporation, and the target includes In 2 O 3 and ZnO. . The Zn content of In + Zn is preferably in the range of 15 to 20 at%. In order to minimize contact resistance, the IZO film is preferably laminated at a temperature of 250 ° C. or lower.

Meanwhile, in the method of manufacturing a thin film transistor array substrate according to the first embodiment of the present invention, the width of the semiconductor pattern photosensitive film pattern 210 may be developed to be wider than the data line 171. The structure completed in such a manufacturing process will be specifically described with reference to the drawings.

24 is a thin film transistor array substrate for a liquid crystal display device according to a second embodiment of the present invention, and FIG. 25 is a cross-sectional view of the thin film transistor array substrate shown in FIG. 24 taken along line XXV-XXV ′.

According to FIGS. 24 and 25, the structure is almost the same as that of the first embodiment of the present invention. However, the width of the semiconductor pattern 152 is wider than the data line 171, and the upper film 702 containing aluminum is formed on the entire surface of the data line 171. Further, the width of the light blocking film 129 is narrower than that of the data line 171.

On the other hand, in a thin film transistor substrate for a liquid crystal display device of a plane drive system that controls liquid crystal molecules arranged substantially parallel to a substrate by using pixel electrodes and a common electrode arranged linearly and oppositely on the same substrate Similarly, the light blocking films as in the first to second reference examples and the first to second embodiments can be applied.

26 is a layout view showing the structure of a thin film transistor array substrate for a liquid crystal display device according to a third embodiment of the present invention. FIG. 27 is a cross-sectional view of the thin film transistor array substrate shown in FIG. 26 taken along line XXVII-XXVII '. FIG. 28 is a layout view of a thin film transistor array substrate for a liquid crystal display device according to a fourth embodiment of the present invention, and FIG. 29 is a cross-sectional view of the thin film transistor array substrate shown in FIG. 28 taken along line XXIX-XXIX ′. .

  As shown in FIGS. 26 and 27, the gate line 121 and the common wiring are formed on the insulating substrate 110. The common wiring includes a common signal line 136 extending in the horizontal direction in parallel with the gate line 121 and a common electrode 138 connected to the common signal line 136 and applied with a common signal through the common signal line 136. Here, the common wirings 136 and 138 can function as a sustain electrode that overlaps with pixel wirings 176 and 178 to be formed later to form a storage capacitor. Further, on the insulating substrate 110, a light blocking film 129 that overlaps with the semiconductor layer 150 located below the data line 171 to be formed later extends in the vertical direction.

  A semiconductor layer 150 is formed on the gate insulating film 140 covering the gate line 121 and the common wirings 136 and 138. The semiconductor layer 150 extends in the vertical direction along the data line 171 to be formed later and has a part overlapping the light blocking film. Resistive contact layers 165 and 163 are formed thereon.

  A data line 171 and a drain electrode 175 are formed on the resistive contact layers 163 and 165 or the gate insulating film 140. In addition, in the same layer as the data line, it is connected to the drain electrode 175 and extends in the horizontal direction so as to face or overlap the common signal line 136 and to be connected to the pixel signal line 176 and the pixel signal line 176 constituting the storage capacitor. A pixel wiring including a pixel electrode 178 extending vertically and facing the common electrode 138 in parallel is formed.

  A protective film 180 is formed on the substrate 110. As in the first to fourth embodiments, the protective film 180 may have contact holes that expose the ends of the gate lines and the data lines. An auxiliary data line connected to the data line 171 may be formed on the protective film, and an auxiliary member electrically connected to each end of the gate line and the data line may be formed. it can.

On the other hand, the structure of the fourth embodiment of the present invention is almost the same as the structure of the third embodiment. However, the semiconductor layer 152 excluding the channel portion has the same pattern as the data line 171 and the drain electrode 175.

The pixel wirings 176 and 178 in the third and fourth embodiments of the present invention are located in the same layer as the data line 171 and the drain electrode 175, but are formed in the same layer as the gate line 121 or on the protective film 180. can do. The common wirings 136 and 138 can be formed in a different layer from the gate line 121, and can also be formed in the same layer as the pixel wirings 176 and 178.

  On the other hand, the red, green, and blue color filters are mainly disposed on the counter substrate, but may be disposed on the thin film transistor array substrate. This will be specifically described with reference to the drawings.

30 is a layout view of a thin film transistor array substrate according to a fifth embodiment of the present invention, and FIG. 31 is a cross-sectional view of the thin film transistor array substrate shown in FIG. 30 taken along line XXXI-XXXI ′.

As shown in FIGS. 30 and 31, the structure according to the fifth embodiment of the present invention is substantially the same as that shown in FIGS. At this time, red (R), green (G), and blue (B) color filters are formed on the upper portion of the pixel electrode 190 and the lower portion of the protective layer 180 on the TFT array substrate according to the fifth embodiment of the present invention . Yes.

  Here, the contact holes of the red (R), green (G), and blue (B) color filters are larger than the contact holes 185 and 187 of the protective film 180, but may be configured smaller. , 187 can be stepped. The side walls defining the contact holes are preferably tapered structures.

  In addition, the red (R), green (G), and blue (B) color filters can be arranged between the gate line 121 and the substrate 110, and they have a configuration in which peripheral portions that overlap with the data line 171 overlap each other. It can also be.

  The preferred embodiments of the present invention have been described in detail above, but the scope of the present invention is not limited thereto, and various modifications and variations of those skilled in the art using the basic concept of the present invention defined in the claims. Improvements are also within the scope of the present invention.

FIG. 5 is a layout diagram illustrating a structure of a thin film transistor substrate for a liquid crystal display device according to a first reference example . It is sectional drawing of the liquid crystal display device along the II-II 'line | wire of FIG. It is a layout view of a thin film transistor substrate in an intermediate process of manufacturing a thin film transistor substrate for a liquid crystal display device according to a reference example . FIG. 3b is a cross-sectional view taken along line IIIb-IIIb ′ of FIG. 3a. It is a layout view of a thin film transistor substrate in an intermediate process of manufacturing a thin film transistor substrate for a liquid crystal display device according to a reference example . FIG. 4B is a sectional view taken along line IVb-IVb ′ in FIG. It is a layout view of a thin film transistor substrate in an intermediate process of manufacturing a thin film transistor substrate for a liquid crystal display device according to a reference example . FIG. 5B is a cross-sectional view taken along the line Vb-Vb ′ in FIG. It is a layout view of a thin film transistor substrate in an intermediate process of manufacturing a thin film transistor substrate for a liquid crystal display device according to a reference example . FIG. 6B is a cross-sectional view taken along the line VIb-VIb ′ of FIG. It is a layout view of a thin film transistor array substrate for a liquid crystal display device according to a second reference example . FIG. 8 is a cross-sectional view taken along line VIII-VIII ′ of the thin film transistor array substrate shown in FIG. 7. FIG. 8 is a cross-sectional view taken along line IX-IX ′ of the thin film transistor array substrate shown in FIG. 7. FIG. 10 is a layout view of a first stage thin film transistor array substrate manufactured based on a second reference example . It is sectional drawing along the Xb-Xb 'line | wire of FIG. 10a. It is sectional drawing along the Xc-Xc 'line | wire of FIG. 10a. FIG. 10B is a sectional view taken along line Xb-Xb ′ in FIG. FIG. 10C is a cross-sectional view taken along the line Xc-Xc ′ in FIG. FIG. 12 is a layout view of a thin film transistor array substrate at the next stage of FIGS. 11a and 11b. It is sectional drawing along the XIIb-XIIb 'line | wire of FIG. 12a. It is sectional drawing along the XIIc-XIIc 'line | wire of FIG. 12a. FIG. 12C is a cross-sectional view taken along line XIIb-XIIb ′ in FIG. 12A, showing the next stage of FIG. FIG. 12C is a cross-sectional view taken along line XIIc-XIIc ′ of FIG. 12A, showing the next stage of FIG. FIG. 12C is a cross-sectional view taken along line XIIb-XIIb ′ in FIG. 12A, showing the next stage of FIG. FIG. 12C is a cross-sectional view taken along line XIIc-XIIc ′ of FIG. 12A, showing the next stage of FIG. FIG. 12C is a cross-sectional view taken along line XIIb-XIIb ′ in FIG. 12A, showing the next stage of FIG. FIG. 12C is a cross-sectional view taken along line XIIc-XIIc ′ of FIG. 12A, showing the next stage of FIG. FIG. 16 is a layout view of a thin film transistor array substrate at the next stage of FIGS. 15a and 15b. It is sectional drawing which followed the XVIb-XVIb 'line | wire of FIG. 16a. It is sectional drawing along the XVIc-XVIc 'line | wire of FIG. 16a. 1 is a layout view showing a structure of a thin film transistor array substrate for a liquid crystal display device according to a first embodiment of the present invention. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII ′ of the thin film transistor array substrate shown in FIG. FIG. 5 is a layout view of a thin film transistor array substrate illustrating an intermediate process of manufacturing a thin film transistor array substrate for a liquid crystal display device according to a first embodiment of the present invention in the order of the steps. It is sectional drawing which followed the XIXb-XIXb 'line | wire of FIG. 19a. FIG. 5 is a layout view of a thin film transistor array substrate illustrating an intermediate process of manufacturing a thin film transistor array substrate for a liquid crystal display device according to a first embodiment of the present invention in the order of the steps. FIG. 19B is a sectional view taken along line XXb-XXb ′ in FIG. FIG. 5 is a layout view of a thin film transistor array substrate illustrating an intermediate process of manufacturing a thin film transistor array substrate for a liquid crystal display device according to a first embodiment of the present invention in the order of the steps. FIG. 21B is a sectional view taken along line XXIb-XXIb ′ in FIG. FIG. 21B is a sectional view taken along line XXIb-XXIb ′ in FIG. FIG. 5 is a layout view of a thin film transistor array substrate illustrating an intermediate process of manufacturing a thin film transistor array substrate for a liquid crystal display device according to a first embodiment of the present invention in the order of the steps. FIG. 22 is a sectional view taken along line XXIIIb-XXIIIb ′ in FIG. FIG. 6 is a layout view illustrating a structure of a thin film transistor array substrate for a liquid crystal display device according to a second embodiment of the present invention. FIG. 25 is a cross-sectional view taken along line XXV-XXV ′ of the thin film transistor array substrate shown in FIG. 24. FIG. 6 is a layout view illustrating a structure of a thin film transistor array substrate for a liquid crystal display device according to a third embodiment of the present invention. FIG. 27 is a sectional view taken along line XXVII-XXVII ′ of the thin film transistor array substrate shown in FIG. 26. FIG. 6 is a layout view illustrating a structure of a thin film transistor array substrate for a liquid crystal display device according to a fourth embodiment of the present invention. FIG. 29 is a cross-sectional view taken along line XXIX-XXIX ′ of the thin film transistor array substrate shown in FIG. 28. FIG. 6 is a layout view of a thin film transistor array substrate according to a fifth embodiment of the present invention. FIG. 31 is a cross-sectional view taken along line XXXI-XXXI ′ of the thin film transistor array substrate shown in FIG. 30.

92 Auxiliary gate member 97 Auxiliary data member 100 Thin film transistor array substrate 110 Insulating substrate 121 Gate line 123 Gate electrode 129 Light blocking film 131 Storage electrode lines 136 and 138 Common wiring 140 Gate insulating film 150 Semiconductor layer 152 Semiconductor pattern 160 Resistive contact layer 163 165 Resistive contact layer pattern 170 Conductor layer 171 Data line 175 Drain electrode 177 Storage capacitor conductor pattern 178 Source / drain conductor pattern 176, 178 Pixel wiring 180 Protective film 190 Pixel electrode 200 Counter substrate 201 Lower film 202 Upper part Films 210, 212, 214 Photosensitive film pattern 500 Backlight

Claims (3)

  1. An insulating substrate;
    A gate line formed on the insulating substrate and including a gate line and a gate electrode connected to the gate line;
    A gate insulating film covering the gate wiring;
    A data line including a data line intersecting with the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode around the gate electrode;
    A semiconductor layer formed on the gate insulating film and partially extending to a lower portion of the data line;
    A light blocking film that overlaps the semiconductor layer below the data line and is formed in the same layer as the gate wiring;
    A pixel electrode electrically connected to the drain electrode;
    A protective film that is formed on the drain electrode and includes a contact hole for connecting the drain electrode and the pixel electrode;
    Wherein the said data lines comprising an upper layer formed and the lower layer, the upper portion of the lower layer, the drain electrode is the upper layer is removed in portions which are connected to the pixel electrode, wherein Concavities and convexities formed by a concave portion along the edge of the contact hole of the protective film and a convex portion located at the central portion of the concave portion are formed in the lower film , and the width of the light blocking film overlapping the semiconductor layer is the semiconductor layer The thin film transistor array substrate is at least 60% larger than the width of the semiconductor layer, and the semiconductor layer excluding the channel portion between the source electrode and the drain electrode is formed in the same pattern as the data wiring.
  2.   2. The thin film transistor array substrate according to claim 1, wherein the semiconductor layer under the data line is the same as or wider than the data line.
  3. The thin film transistor array substrate according to claim 1, wherein a part of the semiconductor layer is exposed outside a peripheral edge of the data wiring.
JP2003420084A 2002-12-17 2003-12-17 Thin film transistor array substrate and liquid crystal display device including the same Active JP4928712B2 (en)

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US20090032818A1 (en) 2009-02-05
US7436474B2 (en) 2008-10-14
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CN100444004C (en) 2008-12-17
KR20040053636A (en) 2004-06-24

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