JP4884807B2 - Manufacturing method of wireless chip - Google Patents

Description

The present invention relates to a wireless chip capable of communicating data by wireless communication and an electronic device having the wireless chip.

  In recent years, development of a wireless chip including a plurality of circuits and antennas has been advanced. Such wireless chips are called ID tags, IC tags, IC chips, RF (Radio Frequency) tags, wireless tags, electronic tags, and RFID (Radio Frequency Identification) tags), and have already been introduced in some markets. Has been.

Many of these wireless chips currently in practical use have a circuit (also called an IC (Integrated Circuit) chip) using a semiconductor substrate such as silicon and an antenna. The antenna is formed by a printing method, a method for etching a conductive thin film, a plating method, or the like (see, for example, Patent Document 1).
JP-A-9-1970

  The antenna formed by the above method is a thin film or a thick film. An antenna attached to a flexible material such as paper or plastic has a problem that part of the antenna is easily broken because it is vulnerable to bending and bending.

In addition, in the case of a wireless chip formed using a semiconductor substrate, the semiconductor substrate functions as a conductor and shields radio waves, so that there is a problem that the signal is easily attenuated depending on the direction of the transmitted radio waves.

  In view of the above-described problems, the present invention provides a wireless chip that can increase mechanical strength. Another object is to provide a wireless chip that can prevent radio waves from being shielded. Furthermore, it is an object to provide an article having a wireless chip.

The gist of the present invention is a wireless chip in which a layer having a thin film transistor and an antenna are fixed by an anisotropic conductive adhesive, and the thin film transistor and the antenna are connected. A gist of a wireless chip in which a layer having a thin film transistor, a layer having a passive element, and an antenna are fixed by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor or the passive element and the antenna are connected. To do.

The layer having a thin film transistor may be formed by stacking layers having a plurality of thin film transistors. Further, a plurality of layers having thin film transistors may be bonded with an anisotropic conductive adhesive. The layer having passive elements may be composed of a plurality of passive elements such as inductors, capacitors, and resistors.

The antenna includes a dielectric layer, a first conductive layer, and a second conductive layer, and the first conductive layer and the second conductive layer sandwich the dielectric layer, and the first conductive layer Functions as a radiation electrode, and the second conductive layer functions as a grounding body. Furthermore, it has a feeder layer or a feeding point.

Moreover, this invention includes the following.

  According to one aspect of the present invention, a layer having a thin film transistor, a connection terminal formed on the surface of the layer having a thin film transistor and connected to the thin film transistor, a first conductive layer functioning as a radiation electrode, and a second functioning as a grounding body And an antenna having a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and an organic resin layer having conductive particles connecting the antenna to the connection terminal. This is a featured wireless chip.

  According to one aspect of the present invention, at least one of a layer having a thin film transistor, a first connection terminal formed on the surface of the layer having a thin film transistor and connected to the thin film transistor, and any passive element of an inductor, a capacitor, and a resistor is provided. A layer having a passive element, a second connection terminal formed on a first surface of the layer having a passive element, and a third connection formed on a second surface opposite to the first surface A first organic resin layer having conductive particles for connecting the terminal, the first connection terminal to the second connection terminal, a first conductive layer that functions as a radiation electrode, and a second that functions as a grounding body. An antenna having a conductive layer and a dielectric layer sandwiched between the first conductive layer and the second conductive layer; a second organic resin layer having conductive particles connecting the antenna to the third connection terminal; Have A wireless chip according to claim.

  According to one aspect of the present invention, at least one of a layer having a thin film transistor, a first connection terminal formed on the surface of the layer having a thin film transistor and connected to the thin film transistor, and any passive element of an inductor, a capacitor, and a resistor is provided. A layer having a passive element, a second connection terminal formed on a first surface of the layer having a passive element, and a third connection formed on a second surface opposite to the first surface A terminal, an organic resin layer having conductive particles that connect the first connection terminal to the second connection terminal, a first conductive layer that functions as a radiation electrode, and a second conductive layer that functions as a grounding body, And an antenna having a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and a third conductive layer for connecting the antenna to the third connection terminal. Chip .

  Note that the thickness of the layer having the thin film transistor, the first layer, or the second layer is 1 μm to 10 μm, preferably 1 μm to 5 μm. In addition, the layer having a thin film transistor may be formed by stacking a plurality of layers having thin film transistors. The layer having a thin film transistor is formed over a flexible insulating substrate, and the thin film transistor may have an organic semiconductor layer. Furthermore, the layer having a thin film transistor may be fixed to a flexible insulating substrate through an organic resin.

  According to one aspect of the present invention, a first layer having a first thin film transistor, a first connection terminal formed on the surface of the first layer and connected to the first thin film transistor, and a second thin film transistor having a second thin film transistor 2 layer, a second connection terminal formed on the first surface of the second layer, a third connection terminal formed on the second surface opposite to the first surface, A first organic resin layer having conductive particles for connecting one connection terminal to the second connection terminal, a first conductive layer functioning as a radiation electrode, a second conductive layer functioning as a grounding body, and An antenna having a dielectric layer sandwiched between the first conductive layer and the second conductive layer; and a second organic resin layer having conductive particles that connect the antenna to the third connection terminal. A wireless chip characterized by the above. Note that the second connection terminal or the third connection terminal is connected to the second thin film transistor.

  According to one aspect of the present invention, a first layer having a first thin film transistor, a first connection terminal formed on the surface of the first layer and connected to the first thin film transistor, and a second thin film transistor having a second thin film transistor 2 layer, a second connection terminal formed on the first surface of the second layer, a third connection terminal formed on the second surface opposite to the first surface, A first organic resin layer having conductive particles for connecting one connection terminal to the second connection terminal, a layer having a passive element having at least one passive element of an inductor, a capacitor, and a resistor; A fourth connection terminal formed on the first surface of the layer having passive elements, a fifth connection terminal formed on the second surface opposite to the first surface, and a third connection terminal A second organic resin layer having conductive particles that connect the first connection terminal to the fourth connection terminal; An antenna having a first conductive layer functioning as a radiation electrode, a second conductive layer functioning as a grounding body, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer; And a third organic resin layer having conductive particles that connect the antenna to the connection terminal. Note that the second connection terminal or the third connection terminal is connected to the second thin film transistor.

  According to one aspect of the present invention, a first layer having a first thin film transistor, a first connection terminal formed on the surface of the first layer and connected to the first thin film transistor, and a second thin film transistor having a second thin film transistor 2 layer, a second connection terminal formed on the first surface of the second layer, a third connection terminal formed on the second surface opposite to the first surface, A first organic resin having conductive particles for connecting one connection terminal to the second connection terminal, a layer having a passive element having at least one of an inductor, a capacitor, and a passive element; A fourth connection terminal formed on the first surface of the layer having the element, a fifth connection terminal formed on the second surface opposite to the first surface, and a third connection terminal. A second organic resin having conductive particles connected to the fourth connection terminal; An antenna having a first conductive layer functioning as an electrode, a second conductive layer functioning as a grounding body, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer; And a third conductive layer for connecting the antenna to the connection terminal. Note that the second connection terminal or the third connection terminal is connected to the second thin film transistor.

  Note that the thickness of the first layer or the second layer is 1 μm to 10 μm, preferably 1 μm to 5 μm. The first layer may be formed over a flexible insulating substrate, and the thin film transistor may include an organic semiconductor layer. Furthermore, the first layer may be fixed to an insulating substrate having flexibility via an organic resin.

  According to one embodiment of the present invention, a first thin film transistor, a second thin film transistor, and a layer having a first antenna connected to the first thin film transistor, and the first thin film transistor, the second thin film transistor, and the first thin film transistor A connection terminal formed on the surface of the layer having the first antenna and connected to the second thin film transistor, a first conductive layer functioning as a radiation electrode, a second conductive layer functioning as a grounding body, and A second antenna having a dielectric layer sandwiched between the first conductive layer and the second conductive layer; and an organic resin layer having conductive particles connecting the second antenna to the connection terminal. A wireless chip characterized by the above.

  Note that the first thin film transistor, the second thin film transistor, and the layer having the first antenna connected to the first thin film transistor are formed over a flexible insulating substrate, and the first thin film transistor and the second thin film transistor The thin film transistor may have an organic semiconductor layer. The first thin film transistor, the second thin film transistor, and the layer having the first antenna connected to the first thin film transistor may be fixed to a flexible insulating substrate with an organic resin interposed therebetween.

  According to one embodiment of the present invention, a layer including a first thin film transistor and a second thin film transistor is formed on a first surface of the layer including the first thin film transistor and the second thin film transistor and is connected to the first thin film transistor. A first connection terminal; a second connection terminal formed on a second surface opposite to the first surface and connected to the second thin film transistor; a first conductive layer functioning as a radiation electrode; A first antenna having a second conductive layer functioning as a grounding body, and a first dielectric layer sandwiched between the first conductive layer and the second conductive layer; and a third antenna functioning as a radiation electrode A second antenna having a conductive layer, a fourth conductive layer functioning as a grounding body, and a third conductive layer and a second dielectric layer sandwiched between the fourth conductive layer and the first antenna; The first connection A wireless chip comprising: a first organic resin having conductive particles connected to a child; and a second organic resin having conductive particles connecting a second antenna to a second connection terminal. It is.

  Note that the thickness of the layer including the first thin film transistor and the second thin film transistor is 1 to 10 μm, preferably 1 to 5 μm.

  The wireless chip includes a central processing unit (microprocessor) and a detection unit in addition to the high-frequency circuit.

  A layer having a thin film transistor, a first layer having a first thin film transistor, a second layer having a second thin film transistor, a first thin film transistor, a second thin film transistor, and a first antenna connected to the first thin film transistor Any one or more of the layers having the first thin film transistor and the second thin film transistor form a power supply circuit, a clock generation circuit, or a data demodulation / modulation circuit.

  The dielectric layer is formed of ceramic or organic resin, or a mixture of ceramic and organic resin. Representative examples of ceramics include alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium diobate, and lead zirconate titanate. Representative examples of the dielectric layer include epoxy resin, phenol resin, polybutadiene resin, bismaleimide triazine resin, vinyl benzyl, and polyfumarate.

  Another embodiment of the present invention is an electronic device including the above wireless chip. Typical examples of electronic devices include liquid crystal display devices, EL display devices, television devices, mobile phones, printers, cameras, personal computers, speaker devices, headphones, navigation devices, on-board devices for ETC, and electronic keys. .

  The layer having the thin film transistor and the antenna can be formed with substantially the same area. Since the antenna serves as a protective member for the layer having the thin film transistor, the mechanical strength of the wireless chip is improved.

  Further, since the patch antenna has high mechanical strength, it can be used repeatedly. Therefore, the wireless chip can be provided in a recyclable container such as a returnable container.

  In addition, since the wireless chip of the present invention is formed using a thin film integrated circuit that is isolated, the radio wave is less likely to be shielded than the wireless chip having an integrated circuit formed using a semiconductor substrate. It is possible to suppress the attenuation of the signal. For this reason, it is possible to perform highly efficient transmission / reception.

  In addition, a wireless chip including a passive element formed using a thick film pattern and an integrated circuit formed using a thin film transistor can highly integrate each circuit using an element having a suitable function. By mounting the wireless chip of the present invention on a wiring board, the number of mounted components can be reduced, so that the wiring board area can be reduced and an electronic device having the wiring board can be downsized.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
One embodiment of a wireless chip of the present invention is shown in FIG. 1A and 1B are cross-sectional views of the wireless chip.

  In the wireless chip of this embodiment, the thin film transistor layer 102 and the antenna 103 are fixed to each other with an anisotropic conductive adhesive 104. In addition, the connection terminal 107 of the layer 102 having a thin film transistor and the power feeding layer 113 of the antenna are electrically connected by conductive particles 109 dispersed in the anisotropic conductive adhesive material 104. Although not shown, the ground wiring of the layer having the thin film transistor and the conductive layer functioning as the grounding body of the antenna are electrically connected by the conductive particles 109 dispersed in the anisotropic conductive adhesive 104.

  The layer 102 having a thin film transistor is formed of a thin film transistor 106 formed over the insulating layer 105, an insulating layer 108 formed over the thin film transistor 106, a connection terminal 107 exposed to the surface of the insulating layer 108 and connected to the thin film transistor 106. The Note that the layer 102 including a thin film transistor may include a resistance element formed using a thin film, a capacitor, and the like in addition to the thin film transistor 106.

  The layer having a thin film transistor preferably has an area similar to that of the antenna 103, and is preferably several mm × several mm to several tens mm × several tens mm. The thickness of the layer having a thin film transistor is several μm to several tens of μm, typically 1 μm to 10 μm, preferably 2 μm to 5 μm.

  The insulating layer 105 functions as a protective layer for the layer 102 including a thin film transistor. The insulating layer 105 is formed of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or the like by a known means such as a sputtering method or a plasma CVD method.

  One mode of the thin film transistor 106 is described with reference to FIGS. FIG. 16A illustrates an example in which a top-gate thin film transistor is applied. A thin film transistor 106 is provided over the insulating layer 105. In the thin film transistor 106, a semiconductor layer 1302 and an insulating layer 1303 which can function as a gate insulating layer are provided over the insulating layer 105. Over the insulating layer 1303, a gate electrode 1304 is formed corresponding to the semiconductor layer 1302, and an insulating layer 1305 that functions as a protective layer and an insulating layer 1306 that functions as an interlayer insulating layer are provided thereover. Further, an insulating layer functioning as a protective layer may be formed thereon.

  The semiconductor layer 1302 is a layer formed of a semiconductor having a crystal structure, and a non-single-crystal semiconductor or a single-crystal semiconductor can be used. In particular, an amorphous or microcrystalline semiconductor is crystallized by crystallizing a semiconductor that is crystallized by laser light irradiation, a crystallized semiconductor that is crystallized by heat treatment, or a combination of heat treatment and laser light irradiation. It is preferable to apply a crystalline semiconductor. In the heat treatment, a crystallization method using a metal element such as nickel which has an action of promoting crystallization of a silicon semiconductor can be applied.

In the case of crystallization by irradiating with laser light, high repetition frequency with continuous wave laser light irradiation or repetition frequency of 10 MHz or more and pulse width of 1 nanosecond or less, preferably 1 to 100 picoseconds. By irradiating with ultrashort pulse light, crystallization can be performed while continuously moving the molten zone in which the crystalline semiconductor is melted in the irradiation direction of the laser light. By such a crystallization method, a crystalline semiconductor having a large particle diameter and a crystal grain boundary extending in one direction can be obtained. By adjusting the carrier drift direction to the direction in which the crystal grain boundary extends, the field-effect mobility in the transistor can be increased. For example, 400 cm ² / V · sec or more can be realized.

  When the crystallization process is performed using a crystallization process at a heat resistant temperature (about 600 ° C.) or lower of the glass substrate, a large-area glass substrate can be used. Therefore, a large amount of wireless chips can be manufactured per substrate, and cost can be reduced.

  Alternatively, the semiconductor layer 1302 may be formed by performing a crystallization step by heating at a temperature equal to or higher than the heat resistant temperature of the glass substrate. Typically, a quartz substrate is used as the insulating substrate, and the semiconductor layer 1302 is formed by heating an amorphous or microcrystalline semiconductor at 700 ° C. or higher. As a result, a semiconductor with high crystallinity can be formed. Therefore, a thin film transistor that has favorable characteristics such as response speed and mobility and can operate at high speed can be provided.

  Further, the semiconductor layer 1302 may be formed using a single crystal semiconductor.

Since a transistor in which a semiconductor layer is formed using such a single crystal semiconductor has favorable characteristics such as response speed and mobility, a transistor that can operate at high speed can be provided. In addition, since the transistor has little variation in characteristics, a wireless chip realizing high reliability can be provided.

  The gate electrode 1304 can be formed using a metal or a polycrystalline semiconductor to which an impurity of one conductivity type is added. In the case of using a metal, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), or the like can be used. Further, a metal nitride obtained by nitriding the above metal can be used. Or it is good also as a structure which laminated | stacked the 1st layer which consists of the said metal nitride, and the 2nd layer which consists of the said metal. In the case of a laminated structure, the end of the first layer may protrude outward from the end of the second layer. At this time, a barrier metal can be formed by using a metal nitride for the first layer. That is, the second layer metal can be prevented from diffusing into the insulating layer 1303 and the semiconductor layer 1302 below the insulating layer 1303.

  Sidewalls (sidewall spacers) 1308 are formed on the side surfaces of the gate electrode 1304. The sidewall can be formed by forming an insulating layer made of silicon oxide on the substrate by a CVD method and anisotropically etching the insulating layer by a RIE (Reactive ion etching) method.

  Various structures such as a single drain structure, an LDD (lightly doped drain) structure, and a gate overlap drain structure can be applied to a transistor including the semiconductor layer 1302, the insulating layer 1303, the gate electrode 1304, and the like. Here, a thin film transistor having an LDD structure in which a low concentration impurity region 1310 is formed in a semiconductor layer where sidewalls overlap is shown. It is also possible to apply a single gate structure, equivalently a multi-gate structure in which transistors to which a gate voltage of the same potential is applied are connected in series, or a dual gate structure in which a semiconductor layer is sandwiched between gate electrodes. it can.

  The insulating layer 1306 is formed using an inorganic insulating material such as silicon oxide or silicon oxynitride, or an organic insulating material such as an acrylic resin or a polyimide resin. When an insulating layer is formed using a coating method such as spin coating or roll coater, an insulating film material dissolved in an organic solvent is applied, and then silicon oxide that forms the insulating layer can be formed by heat treatment. it can. For example, a coatable film including a siloxane bond is formed, and a formable insulating layer formed of silicon oxide can be formed by heat treatment at 200 to 400 degrees. When the insulating layer 1306 is formed using an insulating layer formed by a coating method or an insulating layer flattened by reflow, disconnection of wirings formed over the layer can be prevented. It can also be used effectively when forming multilayer wiring.

  The wiring 1307 formed over the insulating layer 1306 can be provided so as to intersect with a wiring formed in the same layer as the gate electrode 1304, so that a multilayer wiring structure is formed. A multilayer wiring structure can be formed by stacking a plurality of insulating layers having functions similar to the insulating layer 1306 and forming wirings on the insulating layers. The wiring 1307 includes a low-resistance material such as aluminum (Al), such as a laminated structure of titanium (Ti) and aluminum (Al), a laminated structure of molybdenum (Mo) and aluminum (Al), and titanium (Ti) or molybdenum ( It is preferably formed in combination with a barrier metal using a refractory metal material such as Mo).

  FIG. 18B illustrates an example in which a bottom-gate thin film transistor is applied. An insulating layer 105 is formed over an insulating substrate, and a thin film transistor 106 is provided thereover. The thin film transistor 106 includes a gate electrode 1304, an insulating layer 1303 functioning as a gate insulating layer, a semiconductor layer 1302, a channel protective layer 1309, an insulating layer 1305 functioning as a protective layer, and an insulating layer 1306 functioning as an interlayer insulating layer. Yes. Further, an insulating layer functioning as a protective layer may be formed thereon. The wiring 1307 can be formed over the insulating layer 1305 or the insulating layer 1306. Note that in the case of a bottom-gate thin film transistor, the insulating layer 105 is not necessarily formed.

  The insulating layer 108 illustrated in FIG. 1A is formed by a method similar to that of the insulating layer 1306. The connection terminal 107 is formed by a method similar to that of the wiring 1307. In addition, a layer formed of one element or a plurality of elements selected from gold, silver, copper, palladium, or platinum is provided on the uppermost surface of the wiring using a printing method, a plating method, a sputtering method, or the like. Also good.

The layer 102 having a thin film transistor is provided with a separation layer over a substrate, and after the layer 102 having a thin film transistor is formed over the separation layer, the layer 102 having a thin film transistor is separated from the separation layer and anisotropic conductive bonding is performed over the antenna 103. Bonding is performed via the material 104. As a peeling method, (1) a method in which a metal oxide film is provided between a substrate having high heat resistance and a layer having a thin film transistor, the metal oxide film is weakened by crystallization, and the layer having the thin film transistor is peeled off, (2) An amorphous silicon film containing hydrogen is provided between a substrate having high heat resistance and a layer having a thin film transistor, and the amorphous silicon film is removed by laser light irradiation or etching to have the thin film transistor. (3) A substrate having high heat resistance on which a thin film transistor is formed (glass substrate, silicon substrate, etc.) is mechanically removed or by a solution or halogen fluoride gas such as NF ₃ , BrF ₃ , or ClF ₃ (4) A peeling layer and a metal oxide film are provided between a highly heat-resistant substrate and a layer having a thin film transistor, and the metal acid The membrane is weakened by crystallization, after removal by etching by a part of the peeling layer solution and NF _3, BrF _3, ClF 3 halogen fluoride gas such as, physically separated in the metal oxide film weakening (5) A substrate having heat resistance is used as the substrate, a peeling layer and a metal oxide film are provided between the substrate and the insulating layer, and a layer 131 having a second thin film transistor is formed over the insulating layer. After weakening the metal oxide film and irradiating a part of the insulating layer of the layer 131 having the second thin film transistor with laser light to form an opening (an opening exposing a part of the peeling layer), the base is A method of attaching the second thin film transistor to the layer 131 and physically peeling the layer 131 having the second thin film transistor from the substrate using a weakened metal oxide film may be used as appropriate.

In the case where the semiconductor layer 1302 is formed using a single crystal semiconductor, a substrate in which a first single crystal semiconductor layer, an insulating layer, and a second single crystal semiconductor layer are sequentially stacked (SIMOX (Separation by Implanted). A transistor using the first single crystal semiconductor layer as a channel region is manufactured using an Oxygen substrate), and then the second single crystal semiconductor layer is removed by etching, and then the anisotropic conductive adhesive 104 is formed over the antenna 103. As the etching method of the second single crystal semiconductor layer, polishing using a grinding polishing apparatus such as a grindstone, dry etching or wet etching using an etching agent, and further, a grinding polishing apparatus and an etching agent are used. If wet etching is used as the etchant, hydrofluoric acid is added to water or fluoride. Use a mixture diluted with nitrous acid, a mixture of hydrofluoric acid and nitric acid, a mixture of hydrofluoric acid, nitric acid and acetic acid, a mixture of hydrogen peroxide and sulfuric acid, a mixture of hydrogen peroxide and aqueous ammonia, a mixture of hydrogen peroxide and hydrochloric acid, etc. For dry etching, a gas containing a halogen atom or molecule such as fluorine, or a gas containing oxygen together with a halogen atom or molecule is used, preferably a gas containing halogen fluoride or a halogen compound or For example, chlorine trifluoride (ClF ₃ ) may be used as a gas containing halogen fluoride.

  The anisotropic conductive adhesive 104 is an adhesive organic resin in which conductive particles (particle diameter of several nm to several μm) are dispersed, and examples of the organic resin include epoxy resins and phenol resins. The conductive particles are formed of one element or a plurality of elements selected from gold, silver, copper, palladium, or platinum. Moreover, the particle | grains which have the multilayer structure of these elements may be sufficient. Furthermore, even if it uses the electroconductive particle by which the surface of the particle | grains formed with resin was coated with the thin film formed with one metal selected from gold | metal | money, silver, copper, palladium, or platinum, or several metals. Good.

  The antenna 103 is opposite to the dielectric layer 110, the first conductive layer 111 formed on one surface of the dielectric layer, the first conductive layer 111 via the dielectric layer, and the other dielectric layer. A second conductive layer 112 formed on the surface and a power feeding layer 113 are provided. The antenna having such a structure is hereinafter referred to as a patch antenna. The first conductive layer 111 functions as a radiation electrode. Further, the second conductive layer 112 functions as a grounding body. The power feeding layer 113 is provided so as not to contact the first conductive layer 111 and the second conductive layer 112. In addition, power is supplied from the antenna to the antenna or the circuit including the thin film transistor from the antenna through the power supply layer 113. Note that power may be supplied using a power supply point instead of the power supply layer.

  In the present embodiment, the connection terminal 107 and the power feeding layer 113 are electrically connected through the conductive particles 109 of the anisotropic conductive adhesive material 104. Note that although not shown, a ground electrode of a circuit formed of a thin film transistor and the second conductive layer 112 of the antenna 103 are similarly electrically connected through the conductive particles 109.

  Here, the structure of the patch antenna used as the antenna 103 will be described.

The dielectric layer 110 of the patch antenna can be formed of ceramics, organic resin, or a mixture of ceramics and organic resin. Representative examples of ceramics include alumina, glass, forsterite and the like. Further, a plurality of ceramics may be mixed and used. In order to obtain a high dielectric constant, the dielectric layer 110 is preferably formed of a ferroelectric material. Representative examples of the ferroelectric material include barium titanate (BaTiO ₃ ), lead titanate (PbTiO ₃ ), strontium titanate (SrTiO ₃ ), lead zirconate (PbZrO ₃ ), lithium niobate (LiNbO ₃ ), Examples include lead zirconate titanate (PZT). Further, a plurality of ferroelectric materials may be mixed and used.

  As the organic resin, a thermosetting resin or a thermoplastic resin is used as appropriate. As typical examples of organic resins, resin materials such as epoxy resins, phenol resins, polybutadiene resins, bismaleimide triazine resins, vinyl benzyl, polyfumarate, and fluorinated resins can be used. Furthermore, a plurality of organic resin materials may be mixed and used.

  When the dielectric layer 110 is formed of a mixture of ceramics and an organic resin, it is preferable to form by dispersing particulate ceramic particles in the organic resin. At this time, the content of the particulate ceramic with respect to the dielectric layer 110 is preferably 20% by volume or more and 60% by volume or less. The particle size of the ceramic is preferably 1 to 50 μm.

  The relative dielectric constant of the dielectric layer 110 is 2.6 to 150, and preferably 2.6 to 40. By using a ferroelectric material having a high relative dielectric constant, the volume of the patch antenna can be reduced.

  For the first conductive layer 111, the second conductive layer 112, and the power feeding layer 113 of the patch antenna, a metal selected from gold, silver, copper, palladium, platinum, aluminum, an alloy, or the like can be used. Further, the first conductive layer 111, the second conductive layer 112, and the power feeding layer 113 of the patch antenna can be formed using a printing method or a plating method. In addition, after a conductive film is formed on the dielectric layer by an evaporation method, a sputtering method, or the like, each conductive layer can be formed by etching a part of the conductive film.

  The size of the patch antenna is preferably several mm × several mm to several tens mm × several tens mm. Typically, it is 7 mm × 7 mm to 12 mm × 12 mm. The patch antenna has a thickness of 1 mm to 15 mm, typically 1.5 mm to 5 mm. Further, the shape of the patch antenna is preferably a rectangular flat plate, but is not limited thereto. It is also possible to use a circular flat plate.

  The patch antenna will be described with reference to FIG.

  FIG. 7A illustrates a first conductive layer 202 functioning as a radiation electrode, a dielectric layer 201, a second conductive layer 203 functioning as a grounding body, a feeding point 204, a first conductive layer, The patch antenna includes a power feeding body formed in a through hole provided in the dielectric layer and the second conductive layer and connected to a feeding point. Note that the power supply body is connected to the first conductive layer at the power supply point, but is not connected to the second conductive layer. When the first conductive layer 202 functioning as a radiation electrode is circular and has a degenerate separation element 205 in two regions that are point-symmetric, a circularly polarized antenna is obtained. In addition, when the first conductive layer 202 is circular, the patch antenna is a linearly polarized antenna.

  FIG. 7B illustrates a first conductive layer 212 that functions as a radiation electrode, a dielectric layer 211, a second conductive layer 213 that functions as a grounding body, a feeding point 214, a first conductive layer, The patch antenna includes a power feeding body formed in a through hole provided in the dielectric layer and the second conductive layer and connected to a feeding point. Note that the power supply body is connected to the first conductive layer at the power supply point, but is not connected to the second conductive layer. The first conductive layer 212 functioning as a radiation electrode has a rectangular shape and a circularly polarized antenna when the degenerate separation element 215 is present at two corners that are point-symmetric. Further, when the first conductive layer 212 is rectangular, the patch antenna is a linearly polarized antenna.

  FIG. 7C illustrates a patch antenna including a first conductive layer 222 that functions as a radiation electrode, a dielectric layer 221, a second conductive layer 223 that functions as a grounding body, and a power feeding layer 224. . The first conductive layer 222 that functions as a radiation electrode is a circularly polarized antenna having a degenerate separation element 225 at two corners that are rectangular and point-symmetric. When the first conductive layer 222 is a rectangle that does not have the degenerate separation element 225, the patch antenna is a direct-polarized antenna. The first conductive layer 222 functioning as a radiation electrode and the power feeding layer 224 are capacitively coupled through a gap. Further, since the power feeding layer 224 is formed on the side surface of the dielectric layer, surface mounting is possible.

  The patch antenna shown in FIGS. 7A to 7C is provided with second conductive layers 203, 213, and 223 that function as a grounding body on one surface of the dielectric layers 201, 211, and 221. Therefore, the first conductive layers 202, 212, and 222 have directivity, and radio waves are radiated to the first conductive layer side.

  FIG. 7D illustrates a patch antenna including a first conductive layer 242 that functions as a radiation electrode, a dielectric layer 241, a second conductive layer 243 that functions as a grounding body, and a power supply layer 244. . Further, as shown in FIG. 7D, orthogonal slits are formed on the diagonal line in the first conductive layer 242. In other words, the first conductive layer 242 functioning as a radiation electrode is provided with a cross notch. For this reason, the dielectric layer 241 is exposed in a cross shape. The first conductive layer 242 functioning as a radiation electrode and the power feeding layer 244 are capacitively coupled through a gap. Typical examples of patch antennas having such a shape include CABPB 1240, CABPB0730, and CABPB0715 (manufactured by TDK). Further, since the power feeding layer 244 is formed on the side surface of the dielectric layer, surface mounting is possible. Since the patch antenna having such a structure is non-directional due to the orthogonal slits of the radiation electrodes, it is possible to radiate radio waves in all directions. For this reason, it is not necessary to choose a mounting place and an installation angle. For this reason, it is possible to expand the freedom degree of design of an electronic device.

  In addition to the patch antenna shown in FIG. 7, a known patch antenna can be used.

  In particular, by using a circularly polarized patch antenna, satellite transmission / reception such as GPS (Global Positioning System (1.5 GHz)) and satellite digital broadcasting (2.6 GHz), wireless LAN (Local Area Network) (2.4 GHz, PAN (Personal Area Network) such as 5.2 GHz), Bluetooth (trademark) (2.4 GHz), UWB (Ultra Wide Band) (3-10 GHz), third generation data communication, packet communication Etc. can be transmitted and received.

  Note that as illustrated in FIG. 1B, the layer 120 including a thin film transistor may include a plurality of layers 121 to 123 each including a plurality of thin film transistors. Specifically, the layer 122 including the second thin film transistor is formed over the layer 121 including the first thin film transistor. A layer 123 having a third thin film transistor is formed over the layer 122 having a second thin film transistor. In the layer 123 having the third thin film transistor, an insulating layer 127 is formed over the thin film transistor. In addition, a connection terminal 126 which is connected to any one of the thin film transistors including the first to third thin film transistors is formed on the surface of the insulating layer 127.

  Note that in the layer 121 including the first thin film transistor, the first insulating layer 124 is formed over the thin film transistor. The first insulating layer 124 insulates the thin film transistor in the layer 121 including the first thin film transistor from the thin film transistor in the layer 122 including the second thin film transistor. In the layer 122 including the second thin film transistor, the second insulating layer 125 is formed over the thin film transistor. The second insulating layer 125 insulates the thin film transistor in the layer 122 including the second thin film transistor from the thin film transistor in the layer 123 including the third thin film transistor. In the layer 123 including the third thin film transistor, the third insulating layer 127 is formed over the thin film transistor. The third insulating layer 127 insulates the thin film transistor in the layer 123 including the third thin film transistor from the connection terminal.

  In FIG. 1B, the first thin film transistor layer to the third thin film transistor layer are used as the layer 120 having a thin film transistor; however, the present invention is not limited to this, and a layer having two thin film transistors is used. You may comprise. Further, it may be composed of a layer having four or more thin film transistors.

  As shown in FIG. 3A, the layer 102 having a thin film transistor may be fixed to a flexible substrate 100 with an organic resin layer 101 interposed therebetween. As a representative example of the substrate 100 having flexibility, it is preferable to use a thin and light plastic substrate. Typically, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), A substrate made of polypropylene polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, polyphthalamide, or the like can be used. As the flexible substrate 100, paper coated with a film such as release paper can be used.

  As a typical example of the organic resin layer 101, it is preferable to use an organic resin obtained by curing a reactive adhesive such as a thermosetting adhesive, a polymerization adhesive, a pressure sensitive adhesive, or a hot melt adhesive. Specifically, phenol resin, epoxy resin, silicon resin, acrylic resin, polyester resin, silicon resin and the like can be mentioned.

  Note that in the case where an adhesive resin layer is provided over the flexible substrate 100, the flexible substrate can be fixed to the layer 102 including a thin film transistor.

  Note that here, a wireless chip in which a flexible substrate is provided via an organic resin on the layer 102 including the thin film transistor in FIG. 1A is illustrated; however, the present invention is not limited to this. A substrate having flexibility may be provided for the layer having a plurality of thin film transistors as shown in FIG.

  3B, the layer 141 including a thin film transistor formed over the flexible substrate 100 and the antenna 103 may be fixed to each other with an anisotropic conductive adhesive material 104.

  A connection terminal 107 formed on the surface of the layer 141 having a thin film transistor and the power feeding layer 113 are electrically connected through conductive particles 109 of an anisotropic conductive adhesive. Although not shown, a ground electrode of a circuit formed of a thin film transistor and the second conductive layer 112 of the antenna are similarly electrically connected through conductive particles.

  The flexible substrate 100 has a lower heat resistant temperature than a non-flexible substrate such as a glass substrate. For this reason, the thin film transistor is preferably formed using an organic semiconductor. In a layer including a thin film transistor formed using an organic semiconductor, a thin film transistor 142 is formed over a flexible substrate 100, and an insulating layer 108 covering the thin film transistor 142 is formed. A connection terminal 107 connected to the wiring of the thin film transistor 142 is formed on the surface of the layer 141 having a thin film transistor.

  Here, a structure of a thin film transistor using an organic semiconductor is described with reference to FIGS. FIG. 17A illustrates an example in which a staggered thin film transistor is applied. A thin film transistor 142 is provided over a flexible substrate 1401. The thin film transistor 142 includes a gate electrode 1402, an insulating layer 1403 functioning as a gate insulating film, a semiconductor layer 1404 overlapping with the insulating layer functioning as the gate electrode and the gate insulating film, and wirings 1405 and 1406 connected to the semiconductor layer 1404. Yes. Note that the semiconductor layer is in contact with the insulating layer 1403 functioning as a gate insulating film and the wirings 1405 and 1406.

  The gate electrode 1402 can be formed using a material and a method similar to those of the gate electrode 1304. Further, a gate electrode is formed by drying and firing a method of forming a pattern with a predetermined shape by discharging droplets of a composition containing fine particles from a fine hole (hereinafter referred to as a droplet discharge method in this specification). 1402 can be formed. Alternatively, the gate electrode 1402 can be formed by printing a paste containing fine particles over a flexible substrate by a printing method, followed by drying and baking. As typical examples of the fine particles, fine particles mainly containing any of gold, copper, an alloy of gold and silver, an alloy of gold and copper, an alloy of silver and copper, and an alloy of gold, silver, and copper may be used. Further, fine particles mainly containing a conductive oxide such as indium tin oxide (ITO) may be used.

  The insulating layer 1403 functioning as a gate insulating film can be formed using a material and a method similar to those of the insulating layer 1303. However, when an insulating layer is formed by heat treatment after applying an insulating film material dissolved in an organic solvent, the heat treatment temperature is lower than the heat resistance temperature of the flexible substrate.

  Examples of the semiconductor layer 1404 include polycyclic aromatic compounds, conjugated double bond compounds, phthalocyanines, and charge transfer complexes. For example, anthracene, tetracene, pentacene, 6T (hexathiophene), TCNQ (tetracyanoquinodimethane), PTCDA (perylene carboxylic acid anhydride), NTCDA (naphthalene carboxylic acid anhydride) and the like can be used. Specific organic polymer compound materials include π-conjugated polymers, carbon nanotubes, polyvinyl pyridine, phthalocyanine metal complexes, and the like. In particular, when a polyacetylene, polyaniline, polypyrrole, polythienylene, polythiophene derivative, poly (3 alkylthiophene), polyparaphenylene derivative or polyparaphenylene vinylene derivative is used, which is a π-conjugated polymer whose skeleton is composed of conjugated double bonds preferable.

  As a method for forming the organic semiconductor film, a method that can form a film with a uniform thickness on the substrate may be used. The film thickness is 1 nm to 1000 nm, preferably 10 nm to 100 nm. As a specific method, an evaporation method, a coating method, a spin coating method, a bar coating method, a solution casting method, a dip method, a screen printing method, a roll coater method, or a droplet discharge method can be used.

  The wirings 1405 and 1406 can be formed using a material and a method similar to those of the gate electrode 1402.

  FIG. 17B illustrates an example in which a coplanar thin film transistor is used. A thin film transistor 142 is provided over a flexible substrate 1401. The thin film transistor 142 includes a gate electrode 1402, an insulating layer 1403 functioning as a gate insulating film, wirings 1405 and 1406, and a semiconductor layer 1404 overlapping with the insulating layer 1403 functioning as a gate electrode and a gate insulating layer. The wirings 1405 and 1406 are in contact with the insulating layer 1403 and the semiconductor layer 1404 which function as gate insulating layers.

  Here, the structure of the wireless chip of the present invention will be described with reference to FIGS. As shown in FIG. 9A, the wireless chip 20 of the present invention has a function of communicating data without contact, and includes a power supply circuit 11, a clock generation circuit 12, a data demodulation / modulation circuit 13, and other circuits. A control circuit 14 for controlling, an interface circuit 15, a memory circuit 16, a bus 17, and an antenna 18 are provided.

  Further, as shown in FIG. 9B, the wireless chip 20 of the present invention has a function of communicating data without contact, and includes a power supply circuit 11, a clock generation circuit 12, a data demodulation / modulation circuit 13, and the like. In addition to the control circuit 14, the interface circuit 15, the memory circuit 16, the bus 17, and the antenna 18, the central processing unit 21 may be included.

  Further, as shown in FIG. 9C, the wireless chip 20 of the present invention has a function of communicating data without contact, and includes a power supply circuit 11, a clock generation circuit 12, a data demodulation / modulation circuit 13, and the like. In addition to the control circuit 14, the interface circuit 15, the storage circuit 16, the bus 17, the antenna 18, and the central processing unit 21 that control the circuit, a detection unit 30 including a detection element 31 and a detection control circuit 32 may be included.

  The wireless chip of this embodiment includes a power supply circuit 11, a clock generation circuit 12, a data demodulation / modulation circuit 13, a control circuit 14 that controls other circuits, an interface circuit 15, and layers 102, 120, and 141 having thin film transistors. In addition to the memory circuit 16, the bus 17, the antenna 18, and the central processing unit 21, the detection unit 30 including the detection element 31 and the detection control circuit 32 can be configured to form a small and multifunctional wireless chip. Is possible.

  The power supply circuit 11 is a circuit that generates various power supplies to be supplied to each circuit inside the wireless chip 20 based on the AC signal input from the antenna 18. The clock generation circuit 12 is a circuit that generates various clock signals to be supplied to each circuit inside the wireless chip 20 based on the AC signal input from the antenna 18. The data demodulation / modulation circuit 13 has a function of demodulating / modulating data communicated with the reader / writer 19. The control circuit 14 has a function of controlling the memory circuit 16. The antenna 18 has a function of transmitting / receiving electromagnetic waves or radio waves to / from the reader / writer 19. The reader / writer 19 controls communication with the wireless chip, control, and processing related to the data. Note that the wireless chip is not limited to the above-described configuration, and may be a configuration in which other elements such as a power supply voltage limiter circuit and cryptographic processing dedicated hardware are added.

  The memory circuit 16 has one or more selected from DRAM, SRAM, FeRAM, mask ROM, PROM, EPROM, EEPROM, flash memory, and organic memory.

  Note that an organic memory is a memory in which a layer having an organic compound is interposed between a pair of electrodes. An organic memory is a memory in which a mixed layer of an organic compound and an inorganic compound is provided between a pair of electrodes. As a typical example of an organic compound, a substance whose crystal state, conductivity, and shape change when irradiated with an electric action or light is used. Typically, a conjugated polymer doped with a compound that generates acid by absorbing light (a photoacid generator), an organic compound with a high hole-transport property, or an organic compound with a high electron-transport property is used. it can.

  In the case where a mixed layer of an organic compound and an inorganic compound is provided between a pair of electrodes, it is preferable to mix an organic compound having a high hole-transport property and an inorganic compound that easily receives electrons. In addition, it is preferable to mix an organic compound having a high electron transporting property and an inorganic compound that easily gives electrons. By adopting such a configuration, many hole carriers and electron carriers are generated in organic compounds that have essentially no inherent carriers, and extremely excellent hole injection properties / transport properties and electron injection properties / transport properties are achieved. Show.

  Since the organic memory can simultaneously achieve downsizing, thinning, and large capacity, the wireless chip can be reduced in size and weight by providing the memory circuit 16 as an organic memory.

  Note that a mask ROM can be formed at the same time as the thin film transistor. The mask ROM is formed by a plurality of transistors. At that time, data can be written depending on whether or not a contact hole for wiring connected to, for example, a drain region of the transistor is opened. For example, 1 (on) when opened, 0 (off) when not opened. ) Data (information) can be written into the memory cell.

  For example, in the step of exposing a photoresist formed over the insulating layer 108 over the thin film transistor 106 illustrated in FIG. 1A, before or after the step of exposing through a reticle (photomask) using an exposure apparatus such as a stepper. The photoresist on the region where the contact hole is opened is irradiated with an electron beam or a laser. Thereafter, development, etching, stripping of the photoresist, and formation of wiring are performed as usual. By doing so, it is possible to create a pattern that opens the contact hole and a pattern that does not open the contact hole only by selecting the irradiation region of the electron beam or laser without exchanging the reticle (photomask). That is, by selecting an irradiation region of an electron beam or a laser, it becomes possible to manufacture a mask ROM in which different data is written for each semiconductor device at the time of manufacture.

  Using such a mask ROM, a unique identifier (UID: Unique Identifier) or the like for each semiconductor device can be formed at the time of manufacture.

  Here, the configuration of the central processing unit 21 will be described with reference to the block diagram of FIG.

  First, when a signal is input to the bus 17, an analysis circuit 1003 (also referred to as instruction decoder) decodes the signal, and a signal is input to a control signal generation circuit 1004 (CPU Timing Controller). When a signal is input, a control signal is output from the control signal generation circuit 1004 to an arithmetic circuit (hereinafter referred to as ALU 1009) and a storage circuit (hereinafter referred to as register 1010).

  The control signal generation circuit 1004 includes an ALU controller (hereinafter referred to as ACON 1005) that controls the ALU 1009, a circuit (hereinafter referred to as RCON 1006) that controls the register 1010, and a timing controller (hereinafter referred to as TCON 1007) that controls timing. ), And an interrupt controller (hereinafter referred to as ICON 1008) for controlling the interrupt.

  On the other hand, when the processing signal is input to the bus 17, it is output to the ALU 1009 and the register 1010. Then, processing based on the control signal input from the control signal generation circuit 1004 (for example, a memory read cycle, a memory write cycle, an I / O read cycle, an I / O write cycle, or the like) is performed.

  Note that the register 1010 includes a general-purpose register, a stack pointer (SP), a program counter (PC), and the like.

The address controller 1011 outputs a 16-bit address to the bus 17.

  The configuration of the CPU shown in this embodiment does not limit the configuration of the present invention, and a known CPU configuration other than the above configuration can also be used.

  The detection unit 30 can detect temperature, pressure, flow rate, light, magnetism, sound wave, acceleration, humidity, gas component, liquid component, and other characteristics by physical or chemical means. The detection unit 30 includes a detection element 31 that detects a physical quantity or a chemical quantity, and a detection control circuit 32 that converts the physical quantity or the chemical quantity detected by the detection element 31 into an appropriate signal such as an electrical signal. Yes. The detection element 31 is formed of a resistance element, a capacitive coupling element, an inductive coupling element, a photovoltaic element, a photoelectric conversion element, a thermoelectric element, a transistor, a thermistor, a diode, a capacitance element, a piezoelectric element, or the like. Can do. A plurality of detection units 30 may be provided. In this case, a plurality of physical quantities or chemical quantities can be detected simultaneously.

  The physical quantity here refers to temperature, pressure, flow rate, light, magnetism, sound wave, acceleration, humidity, etc., and the chemical quantity refers to chemicals such as components contained in gas components such as gases and liquids such as ions. It refers to substances. In addition, the chemical amount includes organic compounds such as specific biological substances (for example, blood glucose level contained in blood) contained in blood, sweat, urine and the like. In particular, when a chemical quantity is to be detected, a specific substance is necessarily selectively detected. Therefore, a substance that selectively reacts with a substance to be detected is provided in advance in the detection element 31. . For example, when detecting a biological substance, it is preferable that an enzyme, an antibody molecule, a microbial cell, or the like that selectively reacts with the biological substance to be detected by the detection element 31 is fixed to a polymer or the like.

  Note that the temperature, pressure, flow rate, light, magnetism, sound wave, acceleration, humidity, gas component, liquid component, and other characteristics can be detected using the detection unit 30 during communication between the reader / writer and the wireless chip. Further, a film-like secondary battery may be used for the wireless chip. As a typical example of a film-like secondary battery, a thin secondary battery having a gel into which an electrolyte solution has penetrated can be used. In this case, even when not communicating with the reader / writer, the above characteristics can be detected using the detection unit 30.

  In the wireless chip of this embodiment, a layer including a thin film transistor and an antenna can be formed with substantially the same area. Since the patch antenna serves as a protective member for the layer having the thin film transistor, the mechanical strength of the wireless chip is improved.

(Embodiment 2)
One embodiment of a wireless chip of the present invention is shown in FIG. FIG. 2 is a cross-sectional view of the wireless chip. In this embodiment, a structure of a wireless chip including a layer having a plurality of thin film transistors fixed with an anisotropic conductive adhesive and a patch antenna will be described.

  In the wireless chip of this embodiment, the layer 102 including the first thin film transistor and the layer 131 including the second thin film transistor are fixed to each other with the anisotropic conductive adhesive 133.

  The first connection terminal formed on the surface of the layer 102 having the first thin film transistor and the second connection terminal formed on the surface of the layer 131 having the second thin film transistor are an anisotropic conductive adhesive 133. They are electrically connected with conductive particles dispersed therein.

  Similar to the layer 102 having the first thin film transistor and the layer 131 having the second thin film transistor, the layer 131 having the second thin film transistor and the layer 132 having the third thin film transistor are fixed with an anisotropic conductive adhesive 134. The

  The third connection terminal formed on the surface of the layer 131 having the second thin film transistor and the fourth connection terminal formed on the surface of the layer 132 having the third thin film transistor are anisotropically conductive. Electrical connection is made with conductive particles dispersed in the material 134.

  Each of the first thin film transistor layer 102 to the third thin film transistor layer 132 includes a processor unit, a power supply circuit, a clock generation circuit, a data demodulation / modulation circuit, a control circuit, an interface circuit, a storage circuit, a detection circuit, and the like. By using any one of the circuits, it is possible to form a wireless chip having a small size and multiple functions.

  In addition, the antenna 103 and the fifth connection terminal formed on the surface of the layer 132 having the third thin film transistor are electrically connected through conductive particles of an anisotropic conductive adhesive. Although not shown, a ground electrode of a circuit formed of a thin film transistor and the second conductive layer 112 of the antenna are similarly electrically connected through conductive particles.

  In FIG. 2, the wireless chip in which the layer including the first thin film transistor to the layer including the third thin film transistor is fixed with an anisotropic conductive adhesive is shown; however, the present invention is not limited to this and includes two thin film transistors. It may consist of layers. Further, it may be composed of a layer having four or more thin film transistors.

  Further, as in Embodiment 1, the layer 102 including a thin film transistor may be fixed to a flexible substrate.

  Further, this embodiment and Embodiment 1 can be combined as appropriate.

  In the wireless chip of this embodiment, a layer including a thin film transistor formed over an insulating substrate and an antenna can be formed with substantially the same area. Since the patch antenna serves as a protective member for the layer having the thin film transistor, the mechanical strength of the wireless chip is improved.

  In addition, the wireless chip of this embodiment is a highly integrated wireless chip because a plurality of layers including thin film transistors are fixed to a patch antenna.

(Embodiment 3)
One embodiment of a wireless chip of the present invention is shown in FIG. FIG. 4 is a cross-sectional view of the wireless chip. In this embodiment, a structure of a wireless chip in which a layer including a thin film transistor, a passive element, and a patch antenna are fixed with an anisotropic conductive adhesive, a conductive layer, or the like will be described.

  As shown in Embodiment Mode 1, a layer 102 having a thin film transistor is formed. The layer 102 having a thin film transistor and the layer 150 having a passive element are fixed with an anisotropic conductive adhesive 104. Here, the layer 150 having passive elements is indicated by a first passive element 151 and a second passive element 152. In addition, the connection terminal 107 exposed on the surface of the layer 102 having a thin film transistor and the first connection terminal 160 of the layer 150 having a passive element are electrically connected by conductive particles in the anisotropic conductive adhesive 104. The

  Further, the layer 150 having a passive element and the antenna 103 are fixed to each other with conductive layers 171 and 172. The power supply layer 113 of the antenna 103 and the second connection terminal 168 of the layer 150 having a passive element, the second conductive layer 112 functioning as a grounding body of the patch antenna, and the third connection terminal 169 of the passive element are electrically conductive, respectively. The layers 171 and 172 are electrically connected. The conductive layers 171 and 172 are formed by curing a conductive paste. Typical examples of the conductive layer obtained by curing the conductive paste include tin (Sn), silver (Ag), bismuth (Bi), copper (Cu), indium (In), nickel (Ni), antimony (Sb), and zinc. An alloy containing a plurality of (Zn) is mentioned. Further, an anisotropic conductive adhesive can be used instead of the conductive layers 171 and 172.

  In addition, the first passive element 151 includes one or more of a capacitor, an inductor, and a resistor with the insulating layers 154 to 157 and the conductive layers 162 to 164 provided therebetween. Similarly, in the second passive element 152, the insulating layers 157 to 160 and the conductive layers 165 to 167 provided therebetween constitute at least one of a capacitor, an inductor, and a resistor.

  The relative dielectric constant of the insulating layers 154 to 160 of the first passive element 151 or the second passive element 152 is preferably 2.6 to 40. For the conductive layers 162 to 167, a metal having high conductivity such as gold, silver, copper, or aluminum, or an alloy formed of any one of these is used.

  A method for forming the first passive element 151 and the second passive element 152 will be described below. It is formed of a ceramic having aluminum oxide and silicon oxide in a sheet shape (so-called green sheet) with a film thickness of 10 to 150 μm, a metal having high conductivity such as gold, silver, copper, aluminum, or any one of these. The alloy is printed by a printing method to form a conductive layer. If necessary, a through hole may be formed in the green sheet, a conductive paste may be filled in the through hole, and a plug for connecting conductive layers formed in different layers may be formed. The green sheet may be formed by appropriately mixing ceramics, an organic resin, or the like that forms the dielectric layer 110 of the antenna 103 described in Embodiment 1. A plurality of green sheets on which such conductive layers are printed are stacked and thermocompression bonded, processed into a predetermined size, heated at 800 to 1300 degrees to fire the insulating layer and the conductive layer, and one passive element 151 A second passive element 152 can be formed. Furthermore, a conductive layer may be formed on the side surface of the insulating layer, and the conductive layers formed in each layer may be connected.

  An antenna front-end module including a capacitor, a duplexer, and a low-pass filter, and an isolator including an isolator, a coupler, an attenuator, and a power amplifier by combining a plurality of passive elements such as a capacitor, an inductor, a resistor, and a wiring. A power amplifier module, a VCO (voltage controlled oscillator), a band-pass filter (BPF), a multilayer filter, a balun transformer, a dielectric filter, a coupler, a resonator, and the like can be configured.

In addition, the power supply circuit, clock generation circuit, data demodulation / modulation circuit, control circuit for controlling other circuits, interface circuit, storage circuit, bus, antenna, and central processing by a layer having thin film transistors and passive elements A unit, a detection unit including a detection element and a detection control circuit are configured.

  Similarly to Embodiment Mode 1, the layer 102 having a thin film transistor may be fixed to a flexible substrate with an organic resin layer interposed therebetween.

This embodiment and any of Embodiments 1 to 3 can be combined as appropriate.

The wireless chip of this embodiment includes an integrated circuit formed using a passive element formed using a thick film pattern and a thin film transistor. For this reason, each circuit is highly integrated with an element having a suitable function. By mounting the wireless chip of the present invention on a wiring board, the number of mounted components can be reduced, so that the wiring board area can be reduced and an electronic device having the wiring board can be downsized.
(Embodiment 4)

One embodiment of a wireless chip of the present invention is shown in FIG. FIG. 5 is a cross-sectional view of the wireless chip. In this embodiment mode, a wireless chip structure in which a plurality of layers each having a thin film transistor fixed with an anisotropic conductive adhesive, a passive element, and a patch antenna are fixed with an anisotropic conductive adhesive or a conductive layer is used. explain.

  Similarly to Embodiment Mode 2, the layer 102 having the first thin film transistor and the layer 131 having the second thin film transistor are fixed with an anisotropic conductive adhesive 133.

  The first connection terminal formed on the surface of the layer 102 having the first thin film transistor and the second connection terminal formed on the surface of the layer having the second thin film transistor are in the anisotropic conductive adhesive 133. It is electrically connected with conductive particles dispersed in the film.

Similar to the layer 102 having the first thin film transistor and the layer 131 having the second thin film transistor, the layer 131 having the second thin film transistor and the layer 132 having the third thin film transistor are fixed with an anisotropic conductive adhesive 134. The

  In addition, the third connection terminal formed on the surface of the layer 131 having the second thin film transistor and the fourth connection terminal formed on the surface of the layer having the third thin film transistor are anisotropic conductive adhesives. They are electrically connected by conductive particles dispersed in 134.

  A layer 132 having a third thin film transistor and a layer 150 having a passive element are fixed with an anisotropic conductive adhesive 135. Here, as in Embodiment Mode 4, the layer 150 having passive elements is indicated by a first passive element 151 and a second passive element 152. In addition, the connection terminal exposed on the surface of the layer 132 including the third thin film transistor and the first connection terminal of the layer 150 including the passive element are electrically connected by the conductive particles in the anisotropic conductive adhesive. The

  Similarly to Embodiment Mode 4, the layer 150 having a passive element and the antenna 103 are fixed to each other with conductive layers 171 and 172. The power supply layer 113 of the antenna 103 and the second connection terminal 168 of the layer 150 having a passive element, the second conductive layer 112 functioning as a grounding body of the patch antenna, and the third connection terminal 169 of the passive element are electrically conductive, respectively. The layers 171 and 172 are electrically connected. As the conductive layers 171 and 172, a conductive layer obtained by curing a conductive paste is used. Note that an anisotropic conductive adhesive can be used instead of the conductive layers 171 and 172.

  Further, as in Embodiment 1, the layer 102 including a thin film transistor may be fixed to a flexible substrate.

  This embodiment and any of Embodiments 1 to 4 can be combined as appropriate.

The wireless chip of this embodiment includes an integrated circuit formed using a passive element formed using a thick film pattern and a thin film transistor. Therefore, each circuit can be highly integrated with an element having a suitable function. By mounting the wireless chip of this embodiment on a wiring board, the number of mounted components can be reduced, so that the wiring board area can be reduced and an electronic device having the wiring board can be downsized.
(Embodiment 5)

  An embodiment of a wireless chip of the present invention is shown in FIG. In this embodiment, an example of a wireless chip having a plurality of antennas is described. 6A is a development view of the wireless chip, and FIG. 6B is a cross-sectional view taken along line AB of FIG. 6A. In this embodiment mode, a wireless chip including a plurality of antennas, in particular, a first thin film transistor, a second thin film transistor, a layer having a first antenna connected to the first thin film transistor, and a patch antenna. The structure of will be described.

  In the first thin film transistor 186, the second thin film transistor 185, and the layer 180 having the first antenna connected to the first thin film transistor, an interlayer insulating layer 182 is formed over the layer 102 having a thin film transistor, and the interlayer insulating layer 182 is formed. The first antenna 181 is formed. An insulating layer 183 is formed over the first antenna 181, and a connection terminal 184 is formed on the surface of the insulating layer 183.

  The insulating layer 183 from which the connection terminal 184 is exposed and the antenna 103 which is the second antenna are fixed by the anisotropic conductive adhesive 104. Further, the connection terminal 184 and the power supply layer 113 of the patch antenna are electrically connected with conductive particles dispersed in the anisotropic conductive adhesive material 104. The connection terminal 184 and the first thin film transistor 185 are electrically connected. In addition, the second thin film transistor 186 and the first antenna 181 are connected.

  The first antenna 181 is formed using a metal material containing aluminum, copper, or silver. For example, a copper or silver paste composition can be formed by screen printing, offset printing, or an ink jet printing method. Alternatively, an aluminum film may be formed by sputtering or the like and formed by etching. In addition, you may form using an electroplating method and an electroless-plating method.

  Here, the shape of the first antenna 181 is a square coil shape as shown in FIG.

  The shape of the first antenna 181 will be described with reference to FIG. FIG. 8 is a top view showing the interlayer insulating layer 182 and the antenna formed thereon. In this embodiment mode, the first antenna 181 has a rectangular coil shape 181a as shown in FIGS. 6A and 8A, but is not limited to this shape. It may be a circular coil. Further, as shown in FIG. 8B, an antenna having a square loop shape 181b can be obtained. Moreover, it can be set as a circular loop antenna. Further, as shown in FIG. 8C, a linear dipole-shaped antenna 181c can be obtained. Moreover, it can be set as a curved dipole antenna.

  Alternatively, as illustrated in FIG. 18, a wireless chip in which a layer having a thin film transistor is sandwiched between a plurality of patch antennas may be employed.

  Typically, as shown in FIG. 18A, a first connection terminal 191 is formed on the first surface of the layer 102 including a thin film transistor. In addition, the connection terminal 193 is formed on the second surface of the layer 102 including the thin film transistor, which is opposite to the first surface. Here, in the layer having a thin film transistor, a first thin film transistor 189 and a second thin film transistor 190 are formed over the insulating layer 105, and an insulating layer 192 is formed over the thin film transistor. The first connection terminal 191 is connected to the semiconductor layer of the thin film transistor 189 and is exposed on the surface of the insulating layer 105. The second connection terminal 193 is connected to the thin film transistor 190 and exposed on the surface of the insulating layer 192.

  The insulating layer 105 from which the first connection terminal 191 is exposed and the patch antenna which is the first antenna 103 a are fixed by an anisotropic conductive adhesive 187. In addition, the first connection terminal 191 and the power supply layer 113a of the patch antenna that is the first antenna are electrically connected with conductive particles dispersed in an anisotropic conductive adhesive.

  Further, the insulating layer 192 from which the second connection terminal 193 is exposed and the patch antenna which is the second antenna 103 b are fixed by the anisotropic conductive adhesive 104. The second connection terminal 193 and the power supply layer 113b of the patch antenna as the second antenna are electrically connected by conductive particles dispersed in the anisotropic conductive adhesive.

  By using the first antenna 103a and the second antenna 103b as antennas having different frequencies, a wireless chip capable of supporting multiband can be obtained. Furthermore, by using one of the first antenna 103a and the second antenna 103b as a non-directional antenna and the other as a directional antenna, the directivity of radio waves having different frequencies can be transmitted and received properly. Is possible.

Further, as shown in FIG. 18B, the first to third thin film transistors and the first thin film transistor are connected to each other by a patch antenna which is the first antenna 103a and a patch antenna which is the second antenna 103b. A wireless chip in which a layer 194 having a third antenna is sandwiched may be used.

  The layer 194 including the first thin film transistor 189, the second thin film transistor 190, the third thin film transistor 195, and the third antenna 197 connected to the third thin film transistor is an insulating layer over the layer including the first to third thin film transistors. 192 is formed, and a third antenna 197 is formed over the insulating layer 192. An insulating layer 198 is formed over the third antenna 197, and a connection terminal 199 is formed on the surface of the insulating layer 198. The third antenna 197 is connected to the third thin film transistor 195 through the conductive layer 196. The third antenna 197 can be formed in a manner similar to that of the first antenna 181 illustrated in FIGS.

  The insulating layer 105 from which the first connection terminal 191 is exposed and the patch antenna which is the first antenna 103 a are fixed by an anisotropic conductive adhesive 187. In addition, the first connection terminal 191 and the power supply layer 113a of the patch antenna which is the first antenna are electrically connected by conductive particles dispersed in the anisotropic conductive adhesive 187.

  In addition, the insulating layer 198 from which the second connection terminal 199 is exposed and the patch antenna which is the second antenna 103 b are fixed by the anisotropic conductive adhesive 104. In addition, the second connection terminal 199 and the power supply layer 113 b of the patch antenna which is the second antenna are electrically connected by conductive particles dispersed in the anisotropic conductive adhesive 104.

  By using the first antenna 103a, the second antenna 103b, and the third antenna 197 as antennas having different frequencies, a wireless chip capable of supporting multiband can be obtained. Furthermore, by using one of the first antenna 103a and the second antenna 103b as a non-directional antenna and the other as a directional antenna, the directivity of radio waves having different frequencies can be transmitted and received properly. Is possible.

  This embodiment and any of Embodiments 1 to 5 can be combined as appropriate.

  By providing a plurality of antennas in this way, a multi-band compatible wireless chip capable of receiving and transmitting a large number of radio waves with one wireless chip can be formed.

  In the wireless chip of this embodiment mode, a wireless chip including a passive element formed using a thick film pattern and an integrated circuit formed using a thin film transistor can be highly integrated with each element having an appropriate function. Is possible. By mounting the wireless chip of the present invention on a wiring board, the number of mounted components can be reduced, so that the wiring board area can be reduced and an electronic device having the wiring board can be downsized.

  In this embodiment, a method for manufacturing a wireless chip of the present invention will be described with reference to FIGS.

  As shown in FIG. 19A, an insulating layer 402 and a separation layer 403 are formed over one surface of a substrate 401.

  As the substrate 401, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating layer formed on one surface, or the like is used. As the insulating layer 402, silicon nitride, silicon oxynitride, silicon nitride oxide, or the like is formed by a known means (such as a sputtering method or a plasma CVD method).

  The peeling layer 403 is formed by a known means (sputtering method, plasma CVD method, etc.) tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt An element selected from (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silicon (Si), or A layer made of an alloy material containing an element as a main component or a compound material containing an element as a main component is formed as a single layer or a stacked layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

  In the case where the separation layer 403 has a stacked structure, preferably, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed as a first layer, and tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as a second layer. An oxide, nitride, oxynitride or nitride oxide is formed.

  In the case where a stacked structure of a layer containing tungsten and a layer containing an oxide of tungsten is formed as the separation layer 403, a layer containing tungsten is formed, and a layer containing silicon oxide is formed thereover. The fact that a layer containing tungsten oxide is formed at the interface with the silicon oxide layer may be utilized. Further, the layer containing tungsten oxide may be formed by performing thermal oxidation treatment, oxygen plasma treatment, treatment with a strong oxidizing power such as ozone water, or the like on the surface of the layer containing tungsten. The same applies to the case where a layer containing tungsten nitride, oxynitride, and nitride oxide is formed. After a layer containing tungsten is formed, a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer are formed thereon. A layer may be formed.

  Note that although the insulating layer 402 is provided between the substrate 401 and the separation layer 403, the present invention is not limited to this step. The peeling layer 403 may be formed so as to be in contact with the substrate 401.

  Here, a silicon oxynitride layer with a thickness of 100 nm is formed as the insulating layer 402 by a CVD method, and a tungsten layer with a thickness of 30 nm is formed as the separation layer 403 by a sputtering method.

  Next, as illustrated in FIG. 19B, an insulating layer 404 serving as a base is formed so as to cover the separation layer 403. The insulating layer 404 is formed as a single layer or a stacked layer using silicon oxide, silicon oxynitride, silicon nitride, silicon nitride oxide, or the like by a known means (such as a sputtering method or a plasma CVD method). The insulating layer serving as a base functions as a blocking film that prevents impurities from entering the layer including the thin film transistor from the outside.

  Here, as the insulating layer 404 serving as a base, a layer made of silicon nitride oxide with a thickness of 50 nm and a layer made of silicon oxynitride with a thickness of 100 nm are formed by a CVD method.

  Next, a thin film transistor 405 is formed over the insulating layer 404. As the thin film transistor 405, the thin film transistor described in Embodiment 1 can be used as appropriate. Here, as shown in FIG. 16A, a semiconductor layer over the insulating layer 404, an insulating layer that can function as a gate insulating layer, and an insulating layer 1303 are formed corresponding to the semiconductor layers. A top-gate thin film transistor including a gate electrode, an insulating layer functioning as a protective layer over the gate electrode, and a wiring connected to the semiconductor layer through the protective layer is formed.

  Next, the insulating layer 406 is formed as a single layer or a stacked layer so as to cover the thin film transistor 405. Here, as the insulating layer, a siloxane polymer having a thickness of 1.5 μm is applied, and dried and baked to form the insulating layer 406. After that, a protective layer such as a layer containing carbon such as DLC (diamond-like carbon), a layer containing silicon nitride, or a layer containing silicon nitride oxide may be formed over the insulating layer 406.

  Next, a contact hole is formed in the insulating layer 406 covering the thin film transistor, and a connection terminal 407 is formed.

  Note that here, the insulating layer 404, the thin film transistor 405, the insulating layer 406, and the connection terminal 407 are referred to as a layer 408 including a thin film transistor.

  Next, as shown in FIG. 19C, openings 411 and 412 are formed so that the release layer 403 is exposed. The openings 411 and 412 penetrate from the insulating layer 406 to the insulating layer 404 by laser ablation or photolithography.

  Here, the openings 411 and 412 are formed by irradiation with a laser beam emitted from an ultraviolet laser. In addition, it is preferable to provide a continuous opening for each chip so that the openings 411 and 412 are divided into layers having thin film transistors of each wireless chip.

  Next, an etchant is introduced into the openings 411 and 412, and part of the separation layer 403 is removed as illustrated in FIG. The partly etched release layer is referred to as a release layer 413. If the etching agent is wet etching, a mixture of hydrofluoric acid diluted with water or ammonium fluoride, a mixture of hydrofluoric acid and nitric acid, a mixture of hydrofluoric acid, nitric acid and acetic acid, a mixture of hydrogen peroxide and sulfuric acid, hydrogen peroxide And a mixture of ammonia water, hydrogen peroxide and hydrochloric acid. In the case of dry etching, a gas containing a halogen atom or molecule such as fluorine or a gas containing oxygen is used. Preferably, a gas or liquid containing halogen fluoride or a halogen compound is used as the etching agent.

Here, a part of the peeling layer is etched using chlorine trifluoride (ClF ₃ ).

  Next, as illustrated in FIG. 19D, the surface of the insulating layer 406 and the connection terminal 407 in the layer 408 having a thin film transistor and the base 415 are bonded using an adhesive 414.

  Next, as illustrated in FIG. 19E, the substrate 401, the insulating layer 402, and the separation layer 413 are separated from the layer 408 including a thin film transistor.

  As the base 415, a substrate having higher rigidity than the substrate 401 is preferably used. Here, a quartz substrate is used as the base 415. The pressure-sensitive adhesive 414 is a peelable pressure-sensitive adhesive. Typically, an ultraviolet-peelable pressure-sensitive adhesive that is peeled off by ultraviolet rays, a heat-peelable pressure-sensitive adhesive that is peeled off by heat, a water-soluble pressure-sensitive adhesive, or a double-sided pressure-sensitive adhesive tape is used. Can do. Here, an ultraviolet peeling adhesive is used as the adhesive 414.

  At this time, the adhesive strength between the base 415 and the layer 418 having a thin film transistor is set to be higher than the adhesive strength between the substrate 401 and the insulating layer 404. Then, only the layer 408 having a transistor provided over the insulating layer 404 is separated from the substrate 401.

  Next, as illustrated in FIG. 20A, a flexible substrate 421 is fixed to the insulating layer 404 of the layer 408 having a thin film transistor with an adhesive. Note that in the case where an adhesive tree layer is provided over the flexible substrate 421, the flexible substrate 421 can be fixed to the insulating layer 404 of the thin film transistor layer 408 without using an adhesive. It is. Here, as the flexible substrate 421, a sheet material in which a PET film having a silicone resin layer and a silica coat are stacked can be used.

  Next, the base 415 and the adhesive 414 are removed from the surfaces of the insulating layer 406 and the connection terminal 407 of the layer 408 having a thin film transistor.

  Here, the pressure-sensitive adhesive 414 is removed by irradiating the pressure-sensitive adhesive 414 with ultraviolet rays.

  Next, as illustrated in FIG. 20B, the patch antenna 422 is attached to the surface of the layer 408 having a thin film transistor, typically the surfaces of the insulating layer 406 and the connection terminal 407 using an anisotropic conductive adhesive 423. Glue. Here, the patch antenna 422 includes a first conductive layer 426 that functions as a radiation electrode, a second conductive layer 427 that functions as a grounding body, a dielectric sandwiched between the first conductive layer 426 and the second conductive layer 427. A body layer 428 and a power feeding layer 429. The anisotropic conductive adhesive 423 is formed of an adhesive epoxy resin in which silver particles are dispersed as the conductive particles 424.

  In addition, the power supply layer 429 of the connection terminal 407 and the patch antenna 422 and the second conductive layer 427 functioning as a connection terminal and a grounding body (not shown) are connected by the conductive particles 424 of the anisotropic conductive adhesive 423.

  After that, the flexible substrate 421 and the thin film transistor layer 408 are cut to have a shape similar to that of each antenna. In FIG. 20B, the cut portion is indicated by a dashed arrow. Here, the wireless chip is cut out by laser scribing.

  Through the above steps, as illustrated in FIG. 20C, the layer 408a including the thin film transistor fixed to the flexible substrate 421a, the patch antenna 422, the layer 408a including the thin film transistor, and the patch antenna 422 are fixed. The wireless chip 431 including the anisotropic conductive adhesive 423 can be formed. Note that the layer 408 having a thin film transistor cut in FIG. 20B is referred to as a layer 408a having a thin film transistor, and the cut flexible substrate 421 is referred to as a flexible substrate 421a.

  Note that this example and any of the above embodiments can be combined as appropriate.

  In this embodiment, a method for manufacturing a wireless chip in which a layer including a thin film transistor is sandwiched between a plurality of patch antennas will be described with reference to FIGS.

  Similarly to Example 1, as illustrated in FIG. 21A, an insulating layer 402 and separation layers 454 and 455 are formed over one surface of a substrate 401. Here, the peeling layers 454 and 455 are formed by forming a thin film over one surface of the substrate 401 and then selectively etching the thin film using a resist mask formed by a photolithography method. Here, after a tungsten film is formed by a sputtering method, a separation layer is formed except for a region where the first connection terminal exposed to the insulating layer 404 side is formed.

  Next, an insulating layer 404 serving as a base is formed over the insulating layer 402 and the separation layers 454 and 455.

  Next, a thin film transistor is formed over the insulating layer 404 as in Example 1. Here, an insulating layer that can function as a semiconductor layer and a gate insulating layer is formed over the insulating layer 404, a gate electrode formed corresponding to the semiconductor layer is formed over the insulating layer, and an insulating layer 450 is formed thereabove. . After that, a protective layer such as a layer containing carbon such as DLC (diamond-like carbon), a layer containing silicon nitride, or a layer containing silicon nitride oxide may be formed over the insulating layer 450.

  Next, as shown in FIG. 21B, a first contact hole 452 is formed in the insulating layer 450. The first contact hole 452 is a contact hole exposing the source region and the drain region of the semiconductor layer. Next, a second contact hole 453 is formed. The second contact hole is a contact hole that etches the insulating layers from the insulating layer 450 to the insulating layer 404 and exposes the insulating layer 402. Note that the second contact hole 453 is preferably provided in a region where the separation layers 454 and 455 are not formed.

  Next, as illustrated in FIG. 21C, conductive layers 461 to 466 functioning as wirings are formed in the first contact hole and the second contact hole. Note that the conductive layer 461 functioning as a wiring also functions as a connection terminal.

  Next, an insulating layer 469 is formed over the insulating layer 450 and the conductive layers 461 to 466 functioning as wirings, a contact hole is formed in the insulating layer 469, and a connection terminal 470 is formed.

Here, the conductive layers 461 and 462 connected to the semiconductor layer, the gate insulating layer, the gate electrode, and the source region and the drain region of the semiconductor layer are referred to as a first thin film transistor 455. In addition, wirings 465 and 466 connected to the semiconductor layer, the gate insulating layer, the gate electrode, and the source and drain regions of the semiconductor layer are referred to as a second thin film transistor 456. In addition, the wiring 466 of the second thin film transistor 456 is connected to the connection terminal 470.

  Here, the insulating layer 404, the first thin film transistor 455, the conductive layer 461 connected to the first thin film transistor 455, the second thin film transistor 456, the insulating layer 469, and the connection terminal 470 are referred to as a layer 460 including a thin film transistor.

  Next, as illustrated in FIG. 21D, openings 471 and 472 are formed so that the release layers 454 and 455 are exposed, as in the first embodiment. The openings 471 and 472 penetrate from the insulating layer 469 to the insulating layer 404 by laser ablation or photolithography. In order to form a thin film transistor corresponding to each wireless chip by the openings 471 and 472, it is preferable to provide a continuous opening (groove) for each wireless chip.

  Next, as in Example 1, an etchant is introduced into the openings 471 and 472, and part of the separation layers 454 and 455 is removed as illustrated in FIG. Partially etched release layers are indicated as release layers 474 and 475.

  Next, as illustrated in FIG. 22B, the surface of the insulating layer 469 and the connection terminal 470 in the layer 460 including a transistor and the base 415 are bonded to each other with an adhesive 414.

  Next, the substrate 401, the insulating layer 402, and the separation layers 474 and 475 are separated from the layer 460 including a thin film transistor.

  Next, as illustrated in FIG. 22C, the first anisotropic conductive adhesive 423a is formed on the first surface of the layer 460 including a thin film transistor, typically the surfaces of the insulating layer 404 and the conductive layer 461. Used to bond the first patch antenna 422a. Similar to the patch antenna 422 of the first embodiment, the first patch antenna 422a includes a first conductive layer 426a that functions as a radiation electrode, a second conductive layer 427a that functions as a grounding body, a first conductive layer 426a, and The dielectric layer 428a and the power feeding layer 429a are sandwiched between the second conductive layers 427a. The anisotropic conductive adhesive 423a is formed of an adhesive epoxy resin 425a in which silver particles are dispersed as the conductive particles 424a.

  In addition, the first connecting terminal 464 and the feeder layer 429a of the first patch antenna 422a, the second conductive layer 427a functioning as a connecting terminal and a grounding body (not shown), and conductive particles 424a of the anisotropic conductive adhesive 423a. Connect with.

  Next, as shown in FIG. 23A, the base 415 and the adhesive 414 are removed from the surfaces of the insulating layer 469 of the layer 460 including the thin film transistor and the connection terminal 470 as in Example 1.

  Next, as illustrated in FIG. 23B, a second anisotropic conductive adhesive 423b is formed on the second surface of the layer 460 including a thin film transistor, typically the surfaces of the insulating layer 469 and the connection terminal 470. Used to bond the second patch antenna 422b. Similarly to the first patch antenna 422a, the second patch antenna 422b includes a third conductive layer 426b that functions as a radiation electrode, a fourth conductive layer 427b that functions as a grounding body, a third conductive layer 426b, and a fourth conductive layer. A dielectric layer 428b sandwiched between the conductive layers 427b and a power feeding layer 429b. The anisotropic conductive adhesive 423b is formed of an adhesive epoxy resin in which silver particles that are conductive particles 424b are dispersed.

  Further, the power supply layer 429b of the connection terminal 470 and the second patch antenna 422b and the fourth conductive layer 427b functioning as a connection terminal and a grounding body (not shown) are connected by the conductive particles 424b of the anisotropic conductive adhesive 423b. .

  Through the above steps, the first patch antenna 422a, the second patch antenna 422b, the layer 460a including a thin film transistor, the first surface of the layer 408a including a thin film transistor, and the first patch antenna 422a as illustrated in FIG. A first anisotropic conductive adhesive 423a for fixing one patch antenna 422a, and a second anisotropic conductive adhesive 423b for fixing the second surface of the layer 460a having a thin film transistor and the second patch antenna 422b. It is possible to form a wireless chip 491 having Note that the layer 460 including a thin film transistor cut in FIG. 23B is referred to as a layer 460a including a thin film transistor.

  The wireless chip of the present invention has a wide range of uses. For example, vehicles (bicycles 3901 (see FIG. 11B), automobiles, etc.), foods, plants, clothing, household goods (類 3900 (FIG. 11 ( A) (see A), etc.) can be used by providing the wireless chip 20 on an article such as an electronic device or an inspection device. Moreover, it can provide in animals and a human body. Electronic devices include a liquid crystal display device, an EL (Electro Luminescence) display device, a television device (also simply referred to as a television, a television receiver, or a television receiver), a mobile phone 3902 (see FIG. 11C), a printer, Camera, personal computer, goggles with earphones 3903 (see FIG. 11D), speaker device 3904 (see FIG. 11E), headphones 3905 (see FIG. 11F), navigation device, ETC (Electronic Toll Collection: This refers to on-board devices and electronic keys for automatic toll collection systems such as toll roads.

  By providing the wireless chip 20 of the present invention on the eaves 3900, the bicycle 3901, etc., it is possible to detect these locations by GPS. As a result, it is possible to find a stolen bicycle. It also makes it easier to search for missing persons.

  Further, by mounting the wireless chip 20 of the present invention on the mobile phone 3902, information can be transmitted and received and a call can be made.

  In addition, by mounting the wireless chip of the present invention on the goggles with earphones 3903, the speaker device 3904, and the headphones 3905, music played on the audio device can be enjoyed without connecting the audio device and the electronic device with a cord. Is possible. Further, a small hard disk (storage device) may be provided in the goggles with earphones 3903 together with the wireless chip 20. In addition, when the wireless chip 20 includes a central processing unit, the audio signal encrypted by the audio device can be received, demodulated, and amplified by the goggles with earphones 3903, the headphones 3905, and the speaker device 3904. High voice can be heard. In addition, since it is cordless, it is easy to attach the goggles with earphones 3903 and the headphones 3905, and the speaker device 3904 can be easily installed. In this case, the goggles with headphones, headphones, and speaker device are preferably provided with a battery.

  The wireless chip of the present invention is fixed to an article by being mounted on a printed board, pasted on a surface, or embedded. For example, a package made of an organic resin is embedded in the organic resin and fixed to each article. In addition, by providing the wireless chip of the present invention to foods, plants, animals, human bodies, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of systems such as inspection systems and inspection systems. it can.

  Next, one mode of an electronic device on which the wireless chip of the present invention is mounted will be described with reference to the drawings. The electronic device illustrated here is a mobile phone, which includes housings 2700 and 2706, a panel 2701, a housing 2702, a printed wiring board 2703, operation buttons 2704, and a battery 2705 (see FIG. 13). The panel 2701 is detachably incorporated in the housing 2702, and the housing 2702 is fitted on the printed wiring board 2703. The shape and dimensions of the housing 2702 are changed as appropriate in accordance with the electronic device in which the panel 2701 is incorporated. A plurality of packaged semiconductor devices and the wireless chip 2710 of the present invention are mounted on the printed wiring board 2703.

  The panel 2701 is connected to the printed wiring board 2703 through the connection film 2708. The panel 2701, the housing 2702, and the printed wiring board 2703 are housed in the housings 2700 and 2706 together with the operation buttons 2704 and the battery 2705. A pixel region 2709 included in the panel 2701 is arranged so as to be visible from an opening window provided in the housing 2700.

  Note that the housings 2700 and 2706 are examples of the appearance of a mobile phone, and the electronic device according to the present embodiment can be transformed into various modes depending on the function and application.

  Here, a block diagram of a high-frequency circuit typified by a data demodulation and modulation circuit of a mobile phone will be described with reference to FIG.

  First, a process of sending a signal received by the antenna to the baseband unit will be described. The received signal input to the antenna 301 is input from the duplexer 302 to the low noise amplifier (LNA) 303 and amplified to a predetermined signal. The received signal input to the low noise amplifier (LNA) 303 is input to the mixer 305 via the band-pass filter (BPF) 304. An RF signal from the hybrid circuit 306 is input to the mixer 305, and an RF signal component is removed by a band-pass filter (BPF) 307 and demodulated. The reception signal output from the mixer 305 is amplified by the amplifier 309 through the SAW filter 308 and then input to the mixer 310. A local transmission signal having a predetermined frequency is input to the mixer 310 from the local transmission circuit 311, converted to a desired frequency, amplified to a predetermined level by the amplifier 312, and then sent to the baseband unit 313. The antenna 301, the duplexer 302, and the low-pass filter 328 are referred to as an antenna front end module 331.

  Next, a process of transmitting a signal transmitted from the baseband unit with an antenna will be described. The transmission signal transmitted from the baseband unit 313 is mixed with the RF signal from the hybrid circuit 306 by the mixer 321. A voltage control transmission circuit (VCO) 322 is connected to the hybrid circuit 306 so that an RF signal having a predetermined frequency is supplied.

  The transmission signal RF-modulated by the mixer 321 is amplified by a power amplifier (PA) 324 through a band pass filter (BPF) 323. A part of the output of the power amplifier (PA) 324 is taken out from the coupler 325, adjusted to a predetermined level by an attenuator (APC) 326, and then input to the power amplifier (PA) 324 again. PA) 324 is adjusted so that the gain is constant. The transmission signal transmitted from the coupler 325 is input to the duplexer 302 through the isolator 327 for preventing backflow and the low pass filter 328 (LPF), and is transmitted from the antenna 301 connected thereto. The attenuator (APC) 326, the power amplifier (PA) 324, the coupler 325, and the isolator 327 are referred to as an isolator power amplifier module 332.

  Since the wireless chip of the present invention includes the high-frequency circuit, the number of components can be reduced. For this reason, since the number of components mounted on the wiring board can be reduced, the area of the wiring board can be reduced. As a result, the mobile phone can be reduced in size.

  Next, an example of an inspection apparatus capable of wirelessly transmitting detected biological function data will be described with reference to FIG. In an inspection device 3950 shown in FIG. 12A, a wireless chip 3951 of the present invention is provided in a capsule 3952 coated with a protective layer. A filler 3953 may be filled between the capsule 3952 and the wireless chip 3951.

  In an inspection device 3955 shown in FIG. 12B, a wireless chip 3951 of the present invention is provided in a capsule 3952 coated with a protective layer. In addition, the electrode 3956 of the wireless chip is exposed outside the capsule 3952. A filler 3953 may be filled between the capsule 3952 and the wireless chip 3951.

  The wireless chip 3951 of the inspection devices 3950 and 3955 is a wireless chip having a detection unit as shown in FIG. In the detection unit, physical quantity and chemical quantity are measured to detect biological function data. In addition, the detected result can be converted into a signal and transmitted to the reader / writer. When detecting a physical quantity such as pressure, light, sound wave, or the like, an inspection device 3950 in which an electrode is not exposed to the outside of the capsule 3952 as shown in FIG.

  The protective layer provided on the surface of the capsule preferably contains diamond-like carbon (DLC), silicon nitride, silicon oxide, silicon nitride, silicon oxynitride, or carbon nitride. Known capsules and fillers are appropriately used. By providing a protective layer on the capsule, it is possible to prevent the capsule and the wireless chip from being dissolved and denatured in the body.

  In addition, when detecting chemical substances such as temperature, flow rate, magnetism, acceleration, humidity, gas components such as gas and liquid components such as ions, an electrode 3956 is provided outside the capsule 3952 as shown in FIG. It is preferable to use the inspection device 3955 exposed to the surface.

  Note that in the case where the inspection apparatus is an apparatus that images the inside of the body, the inspection apparatus may be provided with a light emitting device such as an LED (Light Emitting Diode) or an EL (Electro Luminescence). As a result, the inside of the body can be imaged.

  In order to spontaneously transmit detection result data from the inspection device to the reader / writer, a known battery may be provided in the detection device.

  Next, a method for using the inspection apparatus will be described. As shown in FIG. 12C, the subject 3962 swallows the inspection device 3950 or 3955 and moves the body cavity 3963. The result detected by the detection unit of the wireless chip is transmitted to a reader / writer 3961 installed in the vicinity of the subject. The reader / writer receives this result. As a result, it is possible to detect the functional data of the subject's living body on the spot without collecting the wireless chip. Moreover, it is possible to image the state of the body cavity and digestive organs.

  In addition, as shown in FIG. 12D, by burying an inspection device 3950 or 3955 in the body of the subject 3962, the result detected by the detection unit of the wireless chip is transmitted to the reader / writer 3964 installed in the vicinity of the subject. To do. In this case, it is embedded in the inspection apparatus 3955 so that the electrode 3957 is in contact with the measurement target portion of the subject. The reader / writer receives this result. It is possible to manage the biological information of the subject by recording and processing the reception result by the biological information management computer. In addition, by providing the reader / writer 3964 on the bed 3960, it is possible to always detect the biological information of the subject whose physical function is incomplete and difficult to move, and to manage the medical condition and health state of the subject. .

  This example and any of the above embodiments can be combined as appropriate.

  In this embodiment, a restaurant system that can reduce the number of workers in the store and reduce labor costs, typically a restaurant (restaurant, restaurant) that can automatically provide food and drink to the purchaser. A system of a coffee shop, a fast food shop, etc.) will be described with reference to FIG.

  A restaurant that can automatically provide food and drink to a purchaser has a vending machine 600 as shown in FIG. The vending machine 600 is provided with a display unit 601, a money slot (typically, a money slot 602, a bill slot 603), a menu selection button 604, a tray providing slot 605, a money return slot 606, and the like. ing. Further, the vending machine 600 has a door body that can be opened and closed on the front surface, and has a tray storage unit 607 when the door body is opened. The tray stored in the tray storage unit 607 is provided with a wireless chip having a recordable memory. In addition, the vending machine 600 is provided with a reader / writer that writes the details of the purchaser's order into the wireless chip.

  The purchaser inserts money into the money insertion slot of the vending machine 600. Next, the input amount is displayed on the display unit 601 of the vending machine 600, and the selectable button 604 that can be purchased by the input amount is turned on. The purchaser presses a selection button 604 of a menu to be purchased. As a result, the information on the content of the selected menu is recorded in the memory of the wireless chip by the reader / writer in the vending machine 660. Thereafter, the purchaser receives the tray 610 provided with the wireless chip 611 on which information on the menu to be purchased is recorded from the tray providing port 605.

  Next, the purchaser mounts the tray 610 on a transporter 622 such as a belt conveyor provided in a machine capable of automatically providing food and drink (hereinafter referred to as an automatic food and drink supply device 621) ( (See FIG. 15B). The automatic food and drink supply device 621 includes a reader / writer 623, a tableware supply unit 624, food and drink supply units 625 to 627, and the like. The tray 610 mounted on the transporter 622 is carried into the automatic food and drink supply device 621, and the contents of the menu to be purchased recorded on the wireless chip 611 provided on the tray are read out by the reader / writer 623. The reader / writer 623 sends to the tableware supplier 624 and the food and beverage supply devices 625 to 627 information on the tableware and food to be provided accompanying the menu. When it is detected by a sensor, switch, or the like provided near the transporter 622 that the tray 610 has been transported near the tableware supplier 624, the tableware supplier 624 supplies appropriate tableware 631 and 632 to the tray 610. Similarly, when it is detected that the tray 610 has been transported in the vicinity of the food and drink supply devices 625 to 627, the food and drink supply devices 625 to 627 provide food and drink 633 and 634 suitable for the dishes 631 and 632, respectively. . Through the above steps, the food and drink selected by the purchaser can be automatically supplied to the tray 610.

  Thereafter, the purchaser can receive the tray 610 supplied with food and drink from the transporter 622 and eat and drink the food on the table 641 (see FIG. 15C).

  The wireless chip described in any of Embodiments 1 to 6 and Examples 1 to 3 can be applied to the wireless chip of this example.

  In addition, you may have a system which transmits the information which the reader / writer read via the interface to the management center of a manufacturer. The interface is a terminal-side information transmission / reception means for transmitting information stored in the wireless chip to the outside, and the Internet, a telephone line, or the like can be used. Information transmitted from the reader / writer to the management center of the reading manufacturer includes the number of tableware supplied by the tableware supplier, the supply amount of food and drink in the food supplier, and the expiration date. As a result, the manufacturer can grasp the consumption of food and drink at the restaurant. For this reason, it is possible to automatically manage the delivery of tableware and food and drink, simplify the process of receiving and ordering at restaurants and manufacturers, and prevent delays in order placement due to the reduction of workers. It is possible.

  With the above system, it is possible to reduce the number of workers for giving and receiving money, serving food and drinks, etc., so that labor costs and costs can be reduced. It is also possible to provide food and drink to the purchaser quickly.

1 is a cross-sectional view showing a wireless chip according to the present invention. 1 is a cross-sectional view showing a wireless chip according to the present invention. 1 is a cross-sectional view showing a wireless chip according to the present invention. 1 is a cross-sectional view showing a wireless chip according to the present invention. 1 is a cross-sectional view showing a wireless chip according to the present invention. FIG. 2 is a development view and a cross-sectional view illustrating a wireless chip according to the present invention. It is the perspective view which showed the patch antenna applicable to this invention. It is the top view which showed the antenna applicable to this invention. 1 is a diagram showing a wireless chip according to the present invention. It is the figure which showed the central processing unit applicable to this invention. It is the figure which showed the example of application of the radio | wireless chip of this invention. It is the figure which showed the example of application of the radio | wireless chip of this invention. It is the expanded view which showed the application example of the radio | wireless chip of this invention. It is the figure which showed the high frequency circuit applicable to this invention. It is the figure which showed the example of application of the radio | wireless chip of this invention. 1 is a cross-sectional view showing a thin film transistor applicable to the present invention. 1 is a cross-sectional view showing a thin film transistor applicable to the present invention. 1 is a cross-sectional view showing a wireless chip according to the present invention. FIG. 11 is a cross-sectional view illustrating a manufacturing process of a wireless chip according to the present invention. FIG. 11 is a cross-sectional view illustrating a manufacturing process of a wireless chip according to the present invention. FIG. 11 is a cross-sectional view illustrating a manufacturing process of a wireless chip according to the present invention. FIG. 11 is a cross-sectional view illustrating a manufacturing process of a wireless chip according to the present invention. FIG. 11 is a cross-sectional view illustrating a manufacturing process of a wireless chip according to the present invention.

Claims (6)

Forming an integrated circuit having a thin film transistor on a substrate;
Bonding a substrate on the integrated circuit;
Peeling the substrate from the integrated circuit;
Fixing a flexible substrate under the integrated circuit;
Removing the substrate from the integrated circuit;
A method for manufacturing a wireless chip , wherein a patch antenna electrically connected to the integrated circuit is bonded onto the integrated circuit . Forming an integrated circuit having a thin film transistor on a substrate;
A first antenna which is pre-Symbol integrated circuit electrically connected is formed on the integrated circuit,
Adhering a substrate on the first antenna;
Peeling the substrate from the integrated circuit;
Fixing a flexible substrate under the integrated circuit;
Removing the substrate from on the first antenna;
A method for manufacturing a wireless chip , wherein a second antenna including a patch antenna electrically connected to the integrated circuit is bonded onto the first antenna . Forming an integrated circuit having a thin film transistor on a substrate;
Before Symbol integrated circuit are electrically connected, inductors, capacitors, and a layer having a passive element including any one of the resistor secured to the integrated circuit,
Bonding a substrate on the layer having the passive element;
Peeling the substrate from the integrated circuit;
Fixing a flexible substrate under the integrated circuit;
Removing the substrate from the layer having the passive elements;
A method for manufacturing a wireless chip , wherein a patch antenna electrically connected to the passive element is bonded onto a layer having the passive element . In any one of Claims 1 thru | or 3,
A method of manufacturing a wireless chip, wherein the substrate is bonded using an ultraviolet peeling adhesive. Forming an integrated circuit having a thin film transistor on a substrate;
Bonding a substrate on the integrated circuit;
Peeling the substrate from the integrated circuit;
Bonding a first antenna composed of a patch antenna electrically connected to the integrated circuit under the integrated circuit;
Removing the substrate from the integrated circuit;
A method for manufacturing a wireless chip , wherein a second antenna including a patch antenna electrically connected to the integrated circuit is bonded onto the integrated circuit . Forming an integrated circuit having a thin film transistor on a substrate;
A first antenna which is pre-Symbol integrated circuit electrically connected is formed on the integrated circuit,
Adhering a substrate on the first antenna;
Peeling the substrate from the integrated circuit;
Bonding a second antenna comprising a patch antenna electrically connected to the integrated circuit under the integrated circuit;
Removing the substrate from on the first antenna;
A method for manufacturing a wireless chip , wherein a third antenna including a patch antenna electrically connected to the integrated circuit is bonded onto the first antenna .

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