JP4873244B2 - Organic EL panel - Google Patents

Organic EL panel Download PDF

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JP4873244B2
JP4873244B2 JP2007074655A JP2007074655A JP4873244B2 JP 4873244 B2 JP4873244 B2 JP 4873244B2 JP 2007074655 A JP2007074655 A JP 2007074655A JP 2007074655 A JP2007074655 A JP 2007074655A JP 4873244 B2 JP4873244 B2 JP 4873244B2
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charge storage
light emitting
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JP2008235664A (en
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久実 佐藤
有章 志田
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Nippon Seiki Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861—Repairing

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Description

本発明は有機ＥＬ（エレクトロルミネッセンス）素子を発光画素として用いた有機ＥＬパネルに関し、特にパッシブ駆動型の有機ＥＬパネルに関するものである。   The present invention relates to an organic EL panel using an organic EL (electroluminescence) element as a light emitting pixel, and more particularly to a passive drive type organic EL panel.

従来、発光素子として、ガラス材料からなる透光性の支持基板上に、陽極となるＩＴＯ（Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉｄｅ）等からなる透明電極と、正孔注入層、正孔輸送層、発光層及び電子輸送層等からなる有機層と、陰極となるアルミニウム（Ａｌ）等からなる非透光性の背面電極と、を順次積層形成して構成される有機ＥＬ素子が知られている（例えば特許文献１参照）。   Conventionally, as a light-emitting element, a transparent electrode made of ITO (Indium Tin Oxide) or the like serving as an anode, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport on a translucent support substrate made of a glass material. An organic EL element is known which is formed by sequentially laminating an organic layer composed of layers and the like and a non-translucent back electrode composed of aluminum (Al) as a cathode (see, for example, Patent Document 1). ).

有機ＥＬ素子を用いた有機ＥＬパネルは、自発光型平面表示装置として近年脚光を浴びており、液晶表示装置と比較して視野角依存性が少ない、コントラスト比が高い、薄膜化が可能であるなどの利点から各所で研究開発が行われている。   An organic EL panel using an organic EL element has recently attracted attention as a self-luminous flat display device, has less viewing angle dependency than a liquid crystal display device, has a high contrast ratio, and can be thinned. R & D is being carried out in various places because of such advantages.

また、有機ＥＬ素子を透光性の基板上に設けてなる有機ＥＬパネルにおいて、その駆動方式としてパッシブ駆動方式が知られている。パッシブ駆動型の有機ＥＬパネルは、透光性基板上に電極の一方となる信号電極を複数のライン状に形成し、また他方の電極となる走査電極を前記信号電極と交差するように複数のライン状に形成して前記信号電極と前記走査電極との交差位置を有機ＥＬ素子である発光画素とし、この発光画素を複数配置して発光部を構成するものである。かかる有機ＥＬパネルは、線順次走査された画像が前記表示部に表示される。かかるパッシブ駆動型の有機ＥＬパネルは、アクティブ駆動方式と比較して製造が容易であるといった利点がある。   Further, in an organic EL panel in which an organic EL element is provided on a light-transmitting substrate, a passive driving method is known as its driving method. In the passive drive type organic EL panel, a plurality of signal electrodes as one of the electrodes are formed in a plurality of lines on a translucent substrate, and a plurality of scanning electrodes as the other electrode intersect with the signal electrodes. A light emitting pixel which is an organic EL element is formed at the intersection of the signal electrode and the scanning electrode formed in a line shape, and a plurality of the light emitting pixels are arranged to constitute a light emitting portion. In such an organic EL panel, a line-sequentially scanned image is displayed on the display unit. Such a passive drive type organic EL panel has an advantage that it is easier to manufacture than the active drive system.

有機ＥＬパネルの製造においては、両電極が積層形成されているという構成上から製造工程における欠陥や高リーク部位などにより前記電極が短絡して非発光部を生じさせ、表示品質が低下するという問題が知られており、例えば特許文献２にはその解決方法としてそれら短絡を生じさせる個所（不良部位）を排除するために非発光期間に逆バイアス電圧を印加する自己修復方法が開示されている。また、不良部位を製品出荷前に逆バイアス電圧を印加して未然に除去（破壊）し、短絡が発生しないようにする修復エージングなどの技術も例えば特許文献３に開示されている。また、本願出願人は、自己修復や修復エージングの効果が逆バイアスの電圧値だけではなく、発光画素に蓄積される容量とも関係することを見出している（特許文献４参照）。
特開２０００−６８０５７号公報 特開２００３−２８２２４９号公報 特開２００５−９１７１７号公報 特開２００６−０９２８８６号公報 In the production of organic EL panels, the problem is that the electrodes are short-circuited due to defects in the production process, high leak sites, etc. due to the structure in which both electrodes are laminated, resulting in a non-light-emitting portion, and display quality is degraded. For example, Patent Document 2 discloses a self-repairing method in which a reverse bias voltage is applied during a non-light emitting period in order to eliminate a portion (defective part) that causes such a short circuit as a solution. Further, for example, Patent Document 3 discloses a technique such as repair aging in which a defective portion is removed (destroyed) in advance by applying a reverse bias voltage before product shipment so that a short circuit does not occur. Further, the applicant of the present application has found that the effect of self-repair and repair aging is related not only to the reverse bias voltage value but also to the capacity accumulated in the light-emitting pixel (see Patent Document 4).
JP 2000-68057 A JP 2003-282249 A JP 2005-91717 A JP 2006-092886 A

ここで、パッシブ駆動型の有機ＥＬパネルの修復に必要なエネルギーは逆バイアス電圧値のみで決定されるものではなく、逆バイアスを印加した際に蓄積される発光画素の容量も修復エネルギーと
Ｗ＝αＣＶ２
の関係を有している。なお、上記の式において、Ｗは自己修復に必要なエネルギー、αは陰極のシート抵抗，陽極のシート抵抗，画素数及びドライバＩＣのインピーダンス等で決定される比例定数、Ｃは発光画素の面積，膜厚及び誘電率にて決定される発光画素全体の静電容量、Ｖは逆バイアス電圧をそれぞれ示している。 Here, the energy required for repairing the passive drive type organic EL panel is not determined only by the reverse bias voltage value, and the capacity of the light-emitting pixel accumulated when the reverse bias is applied is also the repair energy and W = αCV 2
Have the relationship. In the above formula, W is energy required for self-repair, α is a proportional constant determined by the sheet resistance of the cathode, the sheet resistance of the anode, the number of pixels and the impedance of the driver IC, C is the area of the light emitting pixel, The capacitance of the entire light emitting pixel determined by the film thickness and the dielectric constant, V, indicates the reverse bias voltage.

しかしながら、例えば発光画素の面積が小さい小型の有機ＥＬパネルにおいては逆バイアス電圧を印加した時の素子蓄積容量が少なく、上記の修復エネルギーを得るためにはその分高い値の逆バイアス電圧を印加する必要があり、その値がドライバＩＣの出力限界を超えてしまう場合には修復が不十分となって両電極の短絡が生じてしまうという問題点があった。   However, for example, in a small organic EL panel with a small area of light emitting pixels, the element storage capacity is small when a reverse bias voltage is applied, and a higher reverse bias voltage is applied to obtain the above-mentioned repair energy. When the value exceeds the output limit of the driver IC, there is a problem that the repair is insufficient and the two electrodes are short-circuited.

本発明は、このような問題に鑑み、小型パネルのように発光画素の蓄積容量が少ない有機ＥＬパネルにおいても、自己修復を行って短絡の発生を抑制することが可能な有機ＥＬパネルを提供することを目的とする。   In view of such a problem, the present invention provides an organic EL panel capable of suppressing the occurrence of a short circuit by performing self-repair even in an organic EL panel having a small storage capacity of light emitting pixels such as a small panel. For the purpose.

本発明は、前記課題を解決するために、少なくとも一方が透光性である信号電極と走査電極との間に単数あるいは複数の層が積層形成されてなる積層体をマトリクス状に複数配置してなる有機ＥＬパネルであって、前記積層体は、前記信号電極と前記走査電極との間に少なくとも発光層を含む機能性有機層が積層形成されてなる発光画素と、前記信号電極と前記走査電極との間に電荷蓄積層が積層形成されてなる電荷蓄積素子と、を有し、
前記電荷蓄積層は、発光領域外に位置するように形成されてなり、少なくとも逆バイアス電圧印加時に絶縁性を示し、逆バイアス電圧印加時に電荷を蓄積することを特徴とする。 In order to solve the above-mentioned problems, the present invention provides a plurality of laminated bodies in which a single layer or a plurality of layers are formed between a signal electrode and a scanning electrode, at least one of which is translucent, arranged in a matrix. An organic EL panel comprising: a light emitting pixel in which a functional organic layer including at least a light emitting layer is laminated between the signal electrode and the scan electrode; and the signal electrode and the scan electrode. A charge storage element in which a charge storage layer is stacked between
The charge storage layer, Ri Na is formed so as to be located outside the light emitting region showed insulating at least a reverse bias voltage is applied, characterized by storing charge during the reverse bias voltage is applied.

本発明は有機ＥＬパネルに関するものであって、小型パネルのように発光画素の蓄積容量が少ない有機ＥＬパネルにおいても、自己修復を行って短絡の発生を抑制することが可能となる。   The present invention relates to an organic EL panel, and it is possible to suppress the occurrence of a short circuit by performing self-repair even in an organic EL panel having a small storage capacity of light emitting pixels such as a small panel.

図１は、本発明の実施形態であるパッシブ駆動型の有機ＥＬパネル１を示す図である。有機ＥＬパネル１は、基板２上に積層体３が形成されてなるものであり、電極の短絡を生じさせる個所（不良部位）を排除するために逆バイアス電圧を印加して自己修復を行うものである。なお、自己修復の方法は、有機ＥＬパネル１の駆動における非発光期間に逆バイアス電圧を印加するものであってもよく、また、有機ＥＬパネル１の製造工程において逆バイアス電圧を印加する修復エージング工程を行うものであってもよい。また、基板２上には積層体３を気密的に覆う封止部材が設けられるが、図１においては封止部材を省略している。   FIG. 1 is a diagram showing a passive drive type organic EL panel 1 according to an embodiment of the present invention. The organic EL panel 1 has a laminate 3 formed on a substrate 2 and self-repairs by applying a reverse bias voltage in order to eliminate a point (defective part) that causes a short circuit of electrodes. It is. The self-repairing method may be a method in which a reverse bias voltage is applied during a non-emission period in driving of the organic EL panel 1, and a repair aging in which a reverse bias voltage is applied in the manufacturing process of the organic EL panel 1. You may perform a process. Moreover, although the sealing member which airtightly covers the laminated body 3 is provided on the board | substrate 2, the sealing member is abbreviate | omitted in FIG.

基板２は、長方形形状の透明ガラス材からなり、電気絶縁性の基板である。   The board | substrate 2 consists of a rectangular-shaped transparent glass material, and is an electrically insulating board | substrate.

積層体３は、図１及び図２に示すように、ライン状に複数形成され信号電極となる陽極４と、絶縁層５と、隔壁部６と、有機層７と、陽極４と交差するようにライン状に複数形成され走査電極となる陰極８と、から主に構成される。また、積層体３は、図２及び図３に示すように、陽極４と少なくとも発光層を含む機能性有機層７ａと陰極８とが積層してなる有機ＥＬ素子である発光画素３ａと、陽極４と電荷蓄積層７ｂと陰極８とが積層してなる電荷蓄積素子３ｂと、を有する。なお、図３の部分拡大図においては説明を簡略化するために絶縁層５及び隔壁部６を省略している。発光画素３ａはマトリクス状に複数配置されて所定表示を行う表示領域（発光領域）を形成し、陰極８を順次走査して発光駆動するものである。   As shown in FIG. 1 and FIG. 2, the laminate 3 is formed so as to intersect the anode 4, the insulating layer 5, the partition wall 6, the organic layer 7, and the anode 4. And a plurality of cathodes 8 which are formed in a line shape and serve as scanning electrodes. As shown in FIGS. 2 and 3, the laminate 3 includes a light emitting pixel 3 a that is an organic EL element in which an anode 4, a functional organic layer 7 a including at least a light emitting layer, and a cathode 8 are laminated, and an anode. 4, a charge storage layer 3 b formed by stacking a charge storage layer 7 b and a cathode 8. In the partially enlarged view of FIG. 3, the insulating layer 5 and the partition wall 6 are omitted for the sake of simplicity. A plurality of light emitting pixels 3a are arranged in a matrix to form a display area (light emitting area) for performing a predetermined display, and the cathode 8 is sequentially scanned to emit light.

電荷蓄積素子３ｂは、前記発光領域外にも信号電極となる少なくとも１ラインの陽極４を形成し、この陽極４と各陰極８を一対の電極とし、陽極４と各陰極８との間に電荷蓄積層７ｂを積層形成してなるものである。電荷蓄積素子３ｂは、発光機能を備えておらず絶縁性であり、発光画素３ａの容量不足を補うべく逆バイアス印加時に電荷蓄積層７ｂに自己修復に必要な修復エネルギーを蓄積する機能を有する。なお、電荷蓄積素子３ｂの面積及び膜厚は、不足する修復エネルギー量に応じて任意に設定されるものである。   The charge storage element 3b forms at least one line of anodes 4 serving as signal electrodes outside the light emitting region, and the anode 4 and each cathode 8 are used as a pair of electrodes, and a charge is provided between the anode 4 and each cathode 8. The storage layer 7b is laminated. The charge storage element 3b is not provided with a light emitting function but is insulative, and has a function of storing repair energy necessary for self-repair in the charge storage layer 7b when a reverse bias is applied in order to compensate for the lack of capacity of the light emitting pixel 3a. The area and film thickness of the charge storage element 3b are arbitrarily set according to the insufficient amount of repair energy.

陽極４は、ＩＴＯ等の透光性の導電材料からなり、スパッタリング法等の手段によって基板２上に前記導電材料を層状に形成した後、フォトリソグラフィー法等によって互いに略平行となるようにライン状に複数形成される。   The anode 4 is made of a light-transmitting conductive material such as ITO. After the conductive material is formed in layers on the substrate 2 by means such as a sputtering method, the anode 4 is formed in a line shape so as to be substantially parallel to each other by a photolithography method or the like. A plurality are formed.

絶縁層５は、例えばポリイミド系の電気絶縁性材料から構成され、陽極４と陰極８との間に位置するように陽極４上に形成され、陽極４を露出させる開口部５ａを有するものである。絶縁層５は、電極となる陽極４及び陰極８の短絡を防止するとともに、各発光部の輪郭を明確にするものである。   The insulating layer 5 is made of, for example, a polyimide-based electrically insulating material, is formed on the anode 4 so as to be positioned between the anode 4 and the cathode 8, and has an opening 5 a that exposes the anode 4. . The insulating layer 5 serves to prevent the anode 4 and the cathode 8 serving as electrodes from being short-circuited and to clarify the outline of each light emitting portion.

隔壁部６は、例えばフェノール系の電気絶縁性材料からなり、絶縁層５上に形成される。隔壁部６は、その断面が絶縁層５に対して逆テーパー形状等のオーバーハング形状となるようにフォトリソグラフィー法等の手段によって形成されるものである。また、隔壁部６は、陽極４と直交する方向に等間隔にて複数形成される。隔壁部６は、その上方から蒸着法やスパッタリング法等によって有機層７及び陰極８となる金属膜を形成する場合にオーバーハング形状によって有機層７及び前記金属膜が段切れを起こす構造を得るものである。   The partition wall 6 is made of, for example, a phenol-based electrically insulating material and is formed on the insulating layer 5. The partition wall portion 6 is formed by means such as photolithography so that the cross section thereof has an overhang shape such as a reverse taper shape with respect to the insulating layer 5. A plurality of partition walls 6 are formed at equal intervals in a direction orthogonal to the anode 4. The partition wall 6 has a structure in which the organic layer 7 and the metal film are broken due to an overhang shape when a metal film to be the organic layer 7 and the cathode 8 is formed from above by a vapor deposition method, a sputtering method, or the like. It is.

有機層７は、発光画素３ａを形成するための機能性有機層７ａと、電荷蓄積素子３ｂを形成するための電荷蓄積層７ｂと、を有するものである。   The organic layer 7 has a functional organic layer 7a for forming the light emitting pixel 3a and a charge storage layer 7b for forming the charge storage element 3b.

機能性有機層７ａは、少なくとも発光層を有する複数層からなり陽極４上に形成される。本実施の形態においては、機能性有機層７ａは、正孔注入層，正孔輸送層，第一発光層，第二発光層，電子輸送層及び電子注入層を蒸着法等の手段によって順次積層形成してなる。なお、前記第一の発光層はアンバー色の発光を呈し、前記第二の発光層は青色の発光を呈するものであり、各発光画素３ａは混色によって白色を得るものである。   The functional organic layer 7a includes a plurality of layers having at least a light emitting layer and is formed on the anode 4. In the present embodiment, the functional organic layer 7a is formed by sequentially laminating a hole injection layer, a hole transport layer, a first light emitting layer, a second light emitting layer, an electron transport layer and an electron injection layer by means such as vapor deposition. Formed. The first light emitting layer emits amber light, the second light emitting layer emits blue light, and each light emitting pixel 3a obtains white color by mixing colors.

電荷蓄積層７ｂは、逆バイアス電圧印加時に絶縁性を示す１層あるいは複数層からなるものであり、例えば機能性有機層７ａを構成する材料を適用することで機能性有機層７ａと同工程で形成することができ、電荷蓄積素子３ｂの形成が容易となる。具体的には、前記正孔注入層や前記正孔輸送層を構成するアミン系化合物等の正孔輸送性材料や前記電子輸送層を構成するＡｌｑ等の電子輸送性材料は、整流性を有する層となり逆バイアス印加時に電流を流さずに絶縁膜のように振る舞うため電荷蓄積層７ｂとして好適である。また、蓄積容量を増加させるためには誘電率が高い材料を用いることが好ましい。また、本実施形態において電荷蓄積層７ｂは有機材料からなるものであるが、無機材料によって電荷蓄積層を形成してもよい。   The charge storage layer 7b is composed of one or a plurality of layers that exhibit insulation when a reverse bias voltage is applied. For example, the charge storage layer 7b is formed in the same process as the functional organic layer 7a by applying a material constituting the functional organic layer 7a. The charge storage element 3b can be easily formed. Specifically, a hole transporting material such as an amine compound that constitutes the hole injection layer or the hole transport layer, or an electron transport material such as Alq that constitutes the electron transport layer has a rectifying property. It is suitable as the charge storage layer 7b because it becomes a layer and behaves like an insulating film without flowing current when a reverse bias is applied. In order to increase the storage capacity, it is preferable to use a material having a high dielectric constant. In the present embodiment, the charge storage layer 7b is made of an organic material, but the charge storage layer may be formed of an inorganic material.

陰極８は、アルミニウム（Ａｌ）やマグネシウム銀（Ｍｇ：Ａｇ）等の陽極４よりも導電率が高い金属性導電材料を蒸着法等の手段により層状に形成して金属膜を形成し、隔壁部６によってこの金属膜に段切れを生じてライン状に複数形成してなるものである。陰極８の各ラインは陽極４の各ラインと略直角に交わる（交差する）ように形成される。また、陰極８は接続配線部９に電気的に接続されている。接続配線部９は、陽極４とともに形成されるものであり、同一材料のＩＴＯからなるものである。   The cathode 8 is formed of a metal conductive material having a higher conductivity than the anode 4 such as aluminum (Al) or magnesium silver (Mg: Ag) in a layer shape by means of vapor deposition or the like to form a metal film. 6, the metal film is stepped and formed into a plurality of lines. Each line of the cathode 8 is formed so as to intersect (intersect) each line of the anode 4 at a substantially right angle. The cathode 8 is electrically connected to the connection wiring portion 9. The connection wiring part 9 is formed together with the anode 4 and is made of the same material ITO.

有機ＥＬパネル１は、発光画素３ａを駆動させる各走査電極（陰極８）に対して電荷蓄積素子３ｂを配置することによって、小型パネルのように発光画素の蓄積容量が少ない場合であっても、逆バイアス印加時に自己修復に必要な修復エネルギーを蓄積することができ、自己修復を良好に実施して短絡の発生を抑制することが可能となる。   In the organic EL panel 1, even if the storage capacity of the light emitting pixels is small like a small panel by disposing the charge storage element 3b for each scanning electrode (cathode 8) for driving the light emitting pixels 3a, Repair energy required for self-repair can be accumulated when a reverse bias is applied, and self-repair can be performed satisfactorily to suppress the occurrence of a short circuit.

また、電荷蓄積層７ｂとして、機能性有機層７ａの構成材料のうち少なくとも逆バイアス電圧印加時に絶縁性を示す材料を用いることによって、機能性有機層７ａと同工程にて電荷蓄積層７ｂを形成することができ、容易に電荷蓄積素子３ｂを形成することができる。   Further, the charge storage layer 7b is formed in the same process as the functional organic layer 7a by using a material that exhibits insulation properties at least when a reverse bias voltage is applied among the constituent materials of the functional organic layer 7a. Therefore, the charge storage element 3b can be easily formed.

また、電荷蓄積素子３ｂを前記発光領域外に位置するように形成することによって、有機ＥＬパネル１の表示を妨げることが無く、表示品質を低下させることなく自己修復を実施可能とすることができる。   Further, by forming the charge storage element 3b so as to be located outside the light emitting region, it is possible to perform self-repair without hindering the display of the organic EL panel 1 and without degrading the display quality. .

以下、さらに実施例を上げ、本発明の具体的な効果を説明する。まず、評価方法として、自己修復がなされているか（不良部位が排除されているか）は、自己修復により形成される破壊痕（以下、修復痕という）が形成されているか否かで判断可能である。なお、修復痕は、非発光部位であるいわゆるピンホールとなるが、前記ピンホールの大きさは数μｍ〜数十μｍ程度であるため肉眼で認識可能な大きさではなく、有機ＥＬパネルとしての表示品位を低下させるものではない。評価基準として、ドットサイズ０．５×０．５ｍｍ、発光画素数３２×８０個、陰極（走査線）３２ライン、陽極（信号線）８０ライン、陰極厚５０〜２００ｎｍで構成されるパッシブ駆動型有機ＥＬパネルＡを逆バイアス電圧２０Ｖが印加される自己修復エージング工程にて、約８０℃の高温で１０００時間発光させた。このとき、有機ＥＬパネルＡは、図４に示すように、自己修復による修復痕が同パネル内に適度に分布を持ち生成され、修復痕発生率が約０．０３個／ｍｍ２程度であり、短絡を一切発症しなかった。これは自己修復が十分行われた事によるものである。以下、従来例及び実施例の評価方法として、短絡が発症するか否か、また、有機ＥＬパネルＡとの修復痕発生率の比較によって自己修復性を判断した。 Hereinafter, specific examples of the present invention will be described with further examples. First, as an evaluation method, whether self-repair has been made (whether a defective part has been eliminated) can be determined by whether or not a destruction mark (hereinafter referred to as a repair mark) formed by self-repair is formed. . The repair mark is a so-called pinhole which is a non-light emitting part, but the size of the pinhole is about several μm to several tens of μm, so it is not a size recognizable with the naked eye, but as an organic EL panel. It does not reduce the display quality. As an evaluation standard, a passive drive type comprising a dot size of 0.5 × 0.5 mm, a light emitting pixel number of 32 × 80, a cathode (scanning line) of 32 lines, an anode (signal line) of 80 lines, and a cathode thickness of 50 to 200 nm. The organic EL panel A was caused to emit light at a high temperature of about 80 ° C. for 1000 hours in a self-repair aging process in which a reverse bias voltage of 20 V was applied. At this time, as shown in FIG. 4, in the organic EL panel A, repair marks due to self-repair are generated with a moderate distribution in the panel, and the repair mark occurrence rate is about 0.03 / mm 2 . No short circuit developed. This is due to the fact that self-healing was sufficiently performed. Hereinafter, as an evaluation method of the conventional example and the example, whether or not a short circuit occurs is determined, and self-repairability is determined by comparing the occurrence rate of repair marks with the organic EL panel A.

従来例として、ドットサイズ０．２×０．２ｍｍ、発光画素数３２×８０個、陰極（走査電極）３２ライン、陽極（信号電極）８０ライン、陰極厚２００ｎｍで構成されるパッシブ駆動型の有機ＥＬパネルＢを逆バイアス電圧３０Ｖが印加される自己修復エージング工程にて、約８０℃の高温で１０００時間発光させた。そして前述の評価方法にて試験した結果、図４に示すように、修復痕発生率は０．０１個／ｍｍ２以下であり、十分に自己修復しなかった。 As a conventional example, a passive drive type organic material having a dot size of 0.2 × 0.2 mm, a light emitting pixel number of 32 × 80, a cathode (scanning electrode) of 32 lines, an anode (signal electrode) of 80 lines, and a cathode thickness of 200 nm The EL panel B was allowed to emit light at a high temperature of about 80 ° C. for 1000 hours in a self-repair aging process in which a reverse bias voltage of 30 V was applied. As a result of testing by the above-described evaluation method, as shown in FIG. 4, the repair mark occurrence rate was 0.01 pieces / mm 2 or less, and the self-repair was not sufficient.

実施例として、各走査電極に対して１個の電荷蓄積素子３ｂを追加形成する以外は、従来例と同様なパッシブ駆動型の有機ＥＬパネルＣ〜Ｈを形成した。有機ＥＬパネルＣは、電荷蓄積素子３ｂのドットサイズ０．２×０．８ｍｍ、電荷蓄積層７ｂの膜厚２０ｎｍの構造を有する。有機ＥＬパネルＤは、電荷蓄積素子３ｂのドットサイズ０．２×０．８ｍｍ、電荷蓄積層７ｂの膜厚６０ｎｍの構造を有する。有機ＥＬパネルＥは、電荷蓄積素子３ｂのドットサイズ０．２×０．４ｍｍ、電荷蓄積層７ｂの膜厚２０ｎｍの構造を有する。有機ＥＬパネルＦは、電荷蓄積素子３ｂのドットサイズ０．２×０．４ｍｍ、電荷蓄積層７ｂの膜厚６０ｎｍの構造を有する。有機ＥＬパネルＧは、電荷蓄積素子３ｂのドットサイズ０．２×０．２ｍｍ、電荷蓄積層７ｂの膜厚２０ｎｍの構造を有する。有機ＥＬパネルＨは、電荷蓄積素子３ｂのドットサイズ０．２×０．２ｍｍ、電荷蓄積層７ｂの膜厚６０ｎｍの構造を有する。そして、有機ＥＬパネルＣ〜Ｈを逆バイアス電圧３０Ｖが印加される自己修復エージング工程にて、約８０℃の高温で１０００時間発光させ、前述の評価方法にて試験した。なお、本実施例では電荷蓄積層７ｂに正孔輸送性材料を使用した。図４に示す試験結果から、電荷蓄積素子３ｂを有しない従来の有機ＥＬパネルＢが短絡発症したのに対し、電荷蓄積素子３ｂを有する本発明を適用した有機ＥＬパネルＣ〜Ｈでは短絡発症はなかった。さらに実施例のうち、有機ＥＬパネルＣ〜Ｅは、修復痕発生率が評価基準の有機ＥＬパネルＡと同等の０．０３個／ｍｍ２程度となり、電荷蓄積素子３ｂの面積を調整することで十分な効果が得られることがわかった。かかる評価結果によっても、発光画素の表示面積が小さい小型の有機ＥＬパネルにおいて、本発明を適用することで自己修復により短絡の発症を抑制可能であることは明らかである。 As an example, passive drive organic EL panels C to H similar to the conventional example were formed except that one charge storage element 3b was additionally formed for each scanning electrode. The organic EL panel C has a structure in which the charge storage element 3b has a dot size of 0.2 × 0.8 mm and the charge storage layer 7b has a thickness of 20 nm. The organic EL panel D has a structure in which the charge storage element 3b has a dot size of 0.2 × 0.8 mm and the charge storage layer 7b has a thickness of 60 nm. The organic EL panel E has a structure in which the charge storage element 3b has a dot size of 0.2 × 0.4 mm and the charge storage layer 7b has a thickness of 20 nm. The organic EL panel F has a structure in which the dot size of the charge storage element 3b is 0.2 × 0.4 mm and the thickness of the charge storage layer 7b is 60 nm. The organic EL panel G has a structure in which the dot size of the charge storage element 3b is 0.2 × 0.2 mm and the thickness of the charge storage layer 7b is 20 nm. The organic EL panel H has a structure in which the dot size of the charge storage element 3b is 0.2 × 0.2 mm and the thickness of the charge storage layer 7b is 60 nm. Then, the organic EL panels C to H were caused to emit light at a high temperature of about 80 ° C. for 1000 hours in a self-repair aging process to which a reverse bias voltage of 30 V was applied, and tested by the above-described evaluation method. In this embodiment, a hole transporting material is used for the charge storage layer 7b. From the test results shown in FIG. 4, the conventional organic EL panel B that does not have the charge storage element 3b is short-circuited, whereas in the organic EL panels C to H to which the present invention having the charge storage element 3b is applied, the short-circuiting is There wasn't. Further, among the examples, the organic EL panels C to E have a repair mark occurrence rate of about 0.03 / mm 2 which is equivalent to the evaluation standard organic EL panel A, and the area of the charge storage element 3b is adjusted. It was found that a sufficient effect can be obtained. It is clear from this evaluation result that the occurrence of a short circuit can be suppressed by self-repair by applying the present invention to a small organic EL panel having a small display area of light emitting pixels.

本発明の実施形態である有機ＥＬパネルを示す概観図。1 is an overview diagram showing an organic EL panel according to an embodiment of the present invention. 同上の有機ＥＬパネルを示す模式断面図。The schematic cross section which shows an organic EL panel same as the above. 同上の有機ＥＬパネルを示す部分拡大図。The elements on larger scale which show an organic electroluminescent panel same as the above. 本発明の実施例と従来例とを比較した評価結果を示す図。The figure which shows the evaluation result which compared the Example and conventional example of this invention.

符号の説明Explanation of symbols

１ 有機ＥＬパネル
２ 基板
３ 積層体
３ａ 発光画素
３ｂ 電荷蓄積素子
４ 陽極（信号電極）
５ 絶縁層
６ 隔壁部
７ 有機層
７ａ 機能性有機層
７ｂ 電荷蓄積層
８ 陰極（走査電極）
９ 接続配線部 DESCRIPTION OF SYMBOLS 1 Organic electroluminescent panel 2 Board | substrate 3 Laminated body 3a Light emitting pixel 3b Charge storage element 4 Anode (signal electrode)
5 Insulating layer 6 Partition 7 Organic layer 7a Functional organic layer 7b Charge storage layer 8 Cathode (scanning electrode)
9 Connection wiring section

Claims (1)

少なくとも一方が透光性である信号電極と走査電極との間に単数あるいは複数の層が積層形成されてなる積層体をマトリクス状に複数配置してなる有機ＥＬパネルであって、
前記積層体は、前記信号電極と前記走査電極との間に少なくとも発光層を含む機能性有機層が積層形成されてなる発光画素と、前記信号電極と前記走査電極との間に電荷蓄積層が積層形成されてなる電荷蓄積素子と、を有し、
前記電荷蓄積層は、発光領域外に位置するように形成されてなり、少なくとも逆バイアス電圧印加時に絶縁性を示し、逆バイアス電圧印加時に電荷を蓄積することを特徴とする有機ＥＬパネル。 An organic EL panel comprising a plurality of laminated bodies in which a single layer or a plurality of layers are stacked between a signal electrode and a scanning electrode, at least one of which is translucent, arranged in a matrix,
The stacked body includes a light-emitting pixel in which a functional organic layer including at least a light-emitting layer is stacked between the signal electrode and the scan electrode, and a charge storage layer between the signal electrode and the scan electrode. A charge storage element formed by stacking, and
The charge storage layer, Ri Na is formed so as to be located outside the light emitting region showed insulating at least a reverse bias voltage is applied, the organic EL panel, wherein storing charge during the reverse bias voltage is applied.
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