JP4843978B2 - Method for forming thin film transistor - Google Patents

Method for forming thin film transistor Download PDF

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Publication number
JP4843978B2
JP4843978B2 JP2005091478A JP2005091478A JP4843978B2 JP 4843978 B2 JP4843978 B2 JP 4843978B2 JP 2005091478 A JP2005091478 A JP 2005091478A JP 2005091478 A JP2005091478 A JP 2005091478A JP 4843978 B2 JP4843978 B2 JP 4843978B2
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film transistor
thin film
conductive material
intaglio
transfer mold
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JP2006278428A (en
Inventor
隆一 中村
憲文 古谷
透 大久保
靖匡 秋本
徳政 関根
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凸版印刷株式会社
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Description

  The present invention relates to a method for forming a thin film transistor.

  In recent years, from the viewpoints of flexibility, weight reduction, cost reduction, etc., research on thin film transistors by a wet process has been active, and application to driving circuits such as organic EL and electronic paper, electronic tags, and the like is expected. As a wet process, a resist pattern or a light-shielding ink is applied by offset printing to form a semiconductor pattern or circuit board (for example, Patent Document 1), and a conductive paste is printed by screen printing or a roll coater to form various electrodes. Examples thereof include a method (for example, Patent Document 2) and a method for forming various electrodes by applying a metal fine particle solution by inkjet (for example, Patent Document 3).

Known documents are shown below.
JP-A-7-240523 JP 2004-80026 JP Japanese Patent Laid-Open No. 2004-31933 JP 2001-350009 A

  In a wet process of a thin film transistor, an organic semiconductor that is soluble in a solvent is often used as a semiconductor layer. In general, an organic semiconductor has a low carrier mobility, and a type that is soluble in a solvent is particularly small. Therefore, in order to obtain a practically sufficient operating frequency, it is necessary to shorten the distance between the source and drain electrodes (channel length) as much as possible, and how to shorten the channel length is one of the technical problems.

  Examples of the method for forming the source / drain electrode include a method of printing an electrode forming material in which a conductive material such as metal powder is dispersed in a solvent. The source / drain electrodes are likely to be short-circuited by the flow of. Although the flow after printing is suppressed by increasing the viscosity of the electrode forming material, it is difficult to achieve both channel formation and printability when the desired channel length is below a certain level. For example, in the case of ink jetting, the ink viscosity range that can be used for ink jetting cannot cope with this. Also in screen printing, if the viscosity of the paste is increased, insufficient leveling after printing is likely to occur, and there is a problem that the grid pattern of the screen mesh remains after printing due to insufficient leveling. The present invention has been made in view of these problems, and an object thereof is to provide a method for forming a thin film transistor having a short channel length.

The present invention has been made in consideration of the above-mentioned problems. The invention of claim 1 is directed to a UV light transmission transfer mold substrate, UV light transmission and releasability from a cured UV curable conductive material. And an intaglio plate having a light-shielding property and an intaglio convex member having releasability with respect to the cured UV curable conductive material, wherein the concave portion has at least a pattern of the source / drain electrodes. After the UV curable conductive material is applied to the entire transfer mold plate and dried, the conductive material in the recesses is cured by irradiating UV light from the transfer mold substrate side, and then the uncured conductive material is developed. After the removal, the thin film transistor substrate is overlaid on the intaglio transfer mold with an adhesive interposed therebetween, and then the thin film transistor substrate is separated from the intaglio transfer mold together with the adhesive, and the conductive material is bonded to the adhesive. Through thin film transistor By transferring to the substrate a thin film transistor forming method which comprises a step of forming the source and drain electrodes.

The invention according to claim 2 is the method for forming a thin film transistor according to claim 1 , wherein the adhesive has an insulating property, and a gate electrode is formed as the thin film transistor base material.

A third aspect of the present invention is the method of forming a thin film transistor according to the first aspect, wherein the thin film transistor base material is a substrate on which a gate electrode and a gate insulating film are formed.

  The method for forming a thin film transistor of the present invention includes a step of filling an intaglio transfer type recess having a pattern of a source / drain electrode with a conductive material and curing, and then transferring the cured conductive material to a thin film transistor substrate. Therefore, the problems due to the fluidity and high viscosity due to the conventional printing method are eliminated, and the source / drain electrodes can be formed with a shorter channel length. Also, the conductive material is filled and cured by exposure and development of the conductive material applied to the entire plate surface of the intaglio transfer mold, so that the conductive material is filled with high accuracy and the source / drain electrodes can be formed with higher accuracy. Can do. Further, a bottom-gate thin film transistor can also be formed by using a thin film transistor substrate in which a gate electrode or a gate electrode and a gate insulating film are formed in advance as the thin film transistor substrate.

  In the present invention, the concave portion of the intaglio transfer mold having at least the pattern of the source / drain electrodes is filled with a conductive material and cured, and then the thin film transistor substrate is overlaid on the intaglio transfer mold with an adhesive interposed therebetween. Then, the thin film transistor base material is separated from the intaglio transfer mold together with the adhesive, and the conductive material is transferred to the thin film transistor base material through the adhesive to form the source / drain electrodes.

  In the present invention, two types of methods for filling the intaglio transfer mold with the conductive material are presented.

  The first filling method is shown in FIG. FIG. 1 is a partial explanatory view showing an example of a method for forming a thin film transistor of the present invention in a cross section. An intaglio transfer mold 11 is prepared (FIG. 1A), a conductive material 21 is applied to the plate surface (b), and the conductive material is filled by scraping with a doctor (c). Subsequently, the intaglio transfer mold 31 in which the conductive material is filled and cured is obtained by curing the conductive material filled in the recesses (d).

  The intaglio transfer mold 11 is formed by forming a pattern including at least the shape of the source / drain electrodes by a commonly used method such as a combination of photolithography and etching. The material of the intaglio transfer mold 11 is not particularly limited, and for example, materials such as stainless steel, phosphor bronze, and glass are used. Further, if necessary, a release layer is provided on the surface of the intaglio transfer mold 11 in order to impart release properties to the cured conductive material.

  The conductive material 21 is not particularly limited as long as it has curability, fine powders such as Ni, Al, Cu, Ag, Au, and carbon, nanoparticles such as Ag, Cu, and Au, and organic Ag compounds. Well-known materials, such as various thermosetting or photocurable conductive paste containing conductive materials, such as these, can be used.

  A second filling method is shown in FIG. FIG. 2 is a partial explanatory view showing in cross section another example of the method for forming a thin film transistor of the present invention. An intaglio transfer mold 12 is prepared (FIG. 2A), and a UV curable conductive material 21 is applied to the entire plate surface and dried (b). Thereafter, UV light was irradiated from the surface opposite to the plate surface (backside exposure) to cure the conductive material in the concave portion (c), and the uncured portion was developed and removed (d), whereby the conductive material 22 was filled and cured. An intaglio transfer mold 32 is obtained. The depth at which the UV curable conductive material is cured in the back exposure varies depending on the back exposure. That is, the depth at which the UV curable conductive material is cured can be controlled by the back surface exposure amount. In the first filling method, the conductive material in the recesses is partly scraped off by the doctor, so that the film thickness distribution is likely to occur in the filling. On the other hand, the second filling method is excellent in the thickness accuracy of the filling material, and since there is little remaining in the conductive material other than the recesses, the source / drain electrodes can be formed more accurately.

  The intaglio transfer mold 12 includes a UV light transmissive transfer mold substrate 121, a UV light transmissive and intaglio bottom surface material 122 having releasability from the cured conductive material 22, a light shielding property and the cured conductive material. An intaglio convex member 123 having releasability with respect to the material 22 is laminated. The transfer mold substrate 121 is not particularly limited as long as it has UV light transparency, and for example, a glass substrate is used. The intaglio bottom material 122 is formed on the entire surface of the transfer mold substrate 121 and has a UV light transmission property and a releasability with respect to the cured conductive material. For example, a composition in which various known photopolymerizable acrylic monomers (for example, the photosensitive resin disclosed in Synthesis Example 1 of Patent Document 4) and a polymerization initiator are dissolved in an appropriate solvent is used. It can be formed by uniformly applying to the transfer mold substrate 121 and drying, followed by UV curing. The intaglio convex member 123 is patterned on the intaglio bottom material 122 and has light-shielding properties and releasability from the cured conductive material. For example, various known black photosensitive resin compositions for black matrix for color filters (for example, those described in Example 1 of Patent Document 4) are used, and the composition is uniformly coated on the intaglio bottom material 122. It can be formed by pattern exposure and development after drying. The method for applying the intaglio bottom material 122 and the intaglio convex member is not particularly limited, and examples thereof include spin coating and die coating.

  The conductive material 22 is not particularly limited as long as it has UV-curing properties. Fine powders such as Ni, Al, Cu, Ag, Au, and carbon, nanoparticles such as Ag, Cu, and Au, and organic Ag compounds A known material such as a UV curable conductive paste containing a conductive material such as the above can be used.

  The concave pattern of the intaglio transfer molds 11 and 12 may include a wiring pattern in addition to the shape of the source / drain electrode (when wiring resistance does not matter). In this case, the source / drain electrode and the wiring are the same. It can be formed in a process. The present invention also relates to a method for forming a source / drain electrode. In the present invention, a mold is used as a method for forming a gate electrode in advance on a thin film transistor base material by forming a concave pattern in the shape of a gate electrode. May be used for transfer. That is, a transfer method may be used for all electrode formation.

  Next, the source / drain electrodes are formed by transferring the conductive material filled and cured as described above into the recesses of the intaglio transfer mold to the thin film transistor substrate. FIG. 3 is a partial explanatory view showing, in section, an example of transfer according to the method for forming a thin film transistor of the present invention.

That is, as shown in FIG. 3, the intaglio transfer mold 31 or 32 in which the conductive material 22 is filled and cured.
(In the following description, unless otherwise specified, the intaglio transfer mold 31 is the intaglio transfer mold 31 or 32 of the above example or other examples) and the thin film transistor substrate 41 through the adhesive 5. After overlapping in the state (FIG. 3A) and curing the adhesive, the thin film transistor substrate is separated from the intaglio transfer mold together with the adhesive, and the conductive material is transferred to the thin film transistor substrate via the adhesive. Thus, the source / drain electrodes 6 are formed (b).

  As the adhesive 5, a solventless thermosetting type is used. However, depending on the type of a thin film transistor substrate described later, a solventless UV curing type can also be used. Examples of the thermosetting adhesive include various epoxy adhesives, and examples of the UV curable adhesive include various acrylic adhesives, and those having sufficient adhesion to the conductive material after curing are appropriately used. Select and use.

  The method of interposing the adhesive 5 between the intaglio transfer mold 31 and the thin film transistor substrate 41 is not particularly limited. For example, the thin film transistor substrate is slightly tilted on the intaglio transfer mold to contact one end side. The adhesive is supplied between the intaglio transfer mold and the thin film transistor substrate on the contacted side, and is passed through a pressing means such as a press roller from the contacted side in this state. An adhesive can be developed between the intaglio transfer mold and the thin film transistor substrate.

  In this state, after the adhesive 5 is cured and the conductive agent cured in the concave portion of the intaglio transfer mold 31 is firmly adhered to the adhesive, the intaglio transfer mold and the thin film transistor substrate 41 are separated, The conductive agent cured in the recess is transferred to the thin film transistor base material through the adhesive, and the thin film transistor base material has the source / drain electrodes 6.

  The substrate 41 for the thin film transistor is not particularly limited, but may be appropriately selected and used from the viewpoint of heat resistance and flexibility from known plastic films or sheets having appropriate mechanical rigidity including various glass substrates. Can do. Specifically, soda lime glass, quartz, silicon wafer, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polypropylene, cycloolefin polymer, polyimide, polyethersulfone (PES), polymethyl methacrylate (PMMA), Polycarbonate, polyallylate and the like can be used. Of these, a UV curable substrate can be used as the adhesive 5 if it is a UV transmissive substrate, and the intaglio transfer mold 31 and the thin film transistor substrate 41 are superposed on each other. The adhesive can be cured by irradiating UV light from the substrate 41 side.

  The top gate type thin film transistor shown in FIG. 4 is formed by sequentially forming the semiconductor layer 91, the gate insulating film 71, and the gate electrode 81 on the thin film transistor base material 41 on which the source / drain electrodes 6 thus formed are formed. It is formed.

  The thin film transistor base material 41 is obtained by previously forming a gate electrode 82 on the thin film transistor base material 41 (the thin film transistor base material 42 (FIG. 5A)) or the thin film transistor base material 41 and the gate electrode 83 in advance. A thin film transistor base material 43 (FIG. 5B) may be formed with the gate insulating film 73. These thin film transistor base materials 42 (FIG. 5A) to 43 (FIG. 5B). The bottom gate type thin film transistor shown in FIGS. 6A and 6B can also be formed by transferring the source / drain electrode 6 to form the semiconductor layers 92 and 93.

When the thin film transistor base material 42 is used, since the adhesive 5 functions as a gate insulating film, there is an advantage that a step of providing a gate insulating film is unnecessary, but the gate insulating film has an insulating property necessary for the adhesive. The disadvantage is that it is necessary to control the gap between the intaglio transfer mold 31 and the thin film transistor substrate 42. On the other hand, when the thin film transistor base material 43 is used, the step of providing the gate insulating film 73 is necessary, but the gap with the intaglio transfer type may be ensured by ensuring adhesion with the thin film transistor base material 43. It is easier than controlling the gap required in the substrate 42.

  When the thin film transistor bases 42 to 43 are used, the thin film transistor base 41 and the intaglio transfer mold 31 have UV transparency, and the source / drain electrode and the gate electrode do not overlap with each other. A curable material can be used, and the adhesive 5 can be cured by irradiating UV light from both sides of the thin film transistor substrate 41 side and the intaglio transfer mold 31 side.

The gate insulating films 71 and 73 can be formed using a known material. Specifically, inorganic materials such as SiO 2 , Ba x Sr (1-x) TiO 3 , BaTi x Zr (1-x) O 3 , polyester / melamine resin paste, polymethyl methacrylate, polyvinyl chloride, Organic materials such as polyvinyl alcohol, polyvinyl phenol, polystyrene, and cyanoethyl pullulan can be used. For forming the insulating layer, for example, a known method such as spin coating, dip coating, spray coating, screen printing, letterpress printing, intaglio printing, planographic printing, ink jet, vacuum deposition, or CVD is used.

  The gate electrodes 81 to 83 can be formed, for example, by screen-printing conductive ink and then heat-treating as necessary, or by patterning a copper-clad substrate with a copper foil attached, but of course, vacuum deposition, sputtering, CVD, etc. It may be formed by a vapor phase method or other coating methods. As the conductive material of the gate electrodes 81 to 83, a metal material such as Ni, Al, Cu, Ag, or Au, or a fine powder such as Ni, Al, Cu, Ag, Au, or carbon, or a nanoparticle such as Ag, Cu, or Au In addition, known materials such as various conductive pastes or conductive inks containing a conductive material such as an organic Ag compound can be used.

The semiconductor layers 91 to 93 can be formed of various known materials. Examples thereof include organic materials such as pentacene, polythiophene, polyallylamine, and fluorenebiothiophene copolymer, carbon compound materials such as carbon nanotubes and fullerenes, and inorganic materials such as cadmium selenide particles. Furthermore, as the semiconductor layer, an oxide semiconductor such as InGaZnO-based, InGaO-based, ZnGaO-based, InZnO-based, ZnO, or SnO 2 can be used. The semiconductor layers 91 to 93 can be formed by various known methods. For example, spin coating, dip coating, screen printing, letterpress printing, intaglio printing, planographic printing, ink jet, vacuum deposition, and the like are appropriately selected and used according to the semiconductor material.

<Example 1>
(Production of intaglio transfer mold and filling of concave parts with conductive material)
First, the intaglio transfer mold shown in FIG. 1 was prepared, and a conductive material was filled in the recess.

Using an Invar alloy plate having a thickness of 0.5 mm and a size of 100 mm × 100 mm as a substrate, an intaglio transfer type having a channel length of 10 μm formed by photolithography and etching, and a recess depth of 2 μm Got. Next, a thermosetting silver paste (manufactured by Sumitomo Electric Co., Ltd.) was applied over the entire surface of the intaglio transfer mold, followed by doctoring, followed by drying and thermosetting to obtain an intaglio transfer mold in which a conductive material was filled in the recess.
(Transfer of conductive material to thin film transistor substrate)
A soda lime glass substrate having a thickness of 0.7 mm and a size of 100 mm × 100 mm was used as a thin film transistor substrate. The intaglio transfer mold filled with the conductive material prepared above is coated with a UV curable solventless type adhesive, and after the thin film transistor base material is stacked, the intaglio transfer mold and the thin film transistor base material are passed through a laminator. An adhesive was developed between the two. Subsequently, after the adhesive is cured by UV irradiation from the thin film transistor substrate side, the intaglio transfer mold and the thin film transistor substrate are peeled off, whereby the thin film transistor substrate in which the source / drain electrodes are provided via the adhesive Got.
(Formation of thin film transistors)
A thin film transistor was formed by sequentially providing a semiconductor layer, a gate insulating film and a gate electrode on the thin film transistor substrate on which the source / drain electrodes were formed.
Formation of Semiconductor Layer A thin film transistor substrate on which the source / drain electrodes were formed was spin-coated with a poly (3-hexylthiophene) solution and then dried to form a semiconductor layer.
-Formation of Gate Insulating Film An insulating layer forming solution in which polyvinyl phenol was dissolved in cyclohexanone was spin-coated on the semiconductor layer and then thermally cured to form a gate insulating film having a thickness of 1 μm.
-Formation of gate electrode Ag was mask-deposited on the gate insulating film to form a gate electrode. Finally, vias were formed on the source / drain electrodes to complete a top gate type thin film transistor. As a result of evaluating the gate voltage dependency of the correlation (V-I characteristic) between the drain voltage V and the drain current I, FET characteristics were confirmed.
<Example 2>
(Production of intaglio transfer mold and filling of concave parts with conductive material)
First, the intaglio transfer mold shown in FIG. 2 was prepared, and a conductive material was filled in the recess.

  A soda lime glass substrate having a thickness of 0.7 mm and a size of 100 mm × 100 mm was used as a transfer mold substrate. The following composition comprising a photosensitive resin, pentaerythritol triacrylate and a suitable photopolymerization initiator disclosed in Synthesis Example 1 of Patent Document 4 is spin-coated on the glass substrate, dried, UV cured, and 2 μm thick An intaglio bottom material was formed.

(Intaglio transfer composition)
Photosensitive resin: 100 parts by weight, pentaerythritol triacrylate: 4 parts by weight Photopolymerization initiator: 5 parts by weight, PGMAc: 900 parts by weight.

  Next, the black UV photosensitive material prepared by the method described in Example 1 of Patent Document 4 is spin-coated on a glass substrate on which an intaglio bottom material has been formed and dried, and then a source / drain having a channel length of 10 μm The electrode pattern was exposed. Subsequently, development was performed under predetermined conditions, followed by baking to form a light-shielding intaglio convex member, and an intaglio transfer mold having a concave depth of 2 μm was obtained.

  Next, a UV curable silver paste (manufactured by Toyo Ink Co., Ltd.) is applied to the intaglio transfer mold and dried, and then UV irradiation is performed from the transfer mold substrate side of the intaglio transfer mold to cure the silver paste in the recess. I let you. Subsequently, development was performed under predetermined conditions, followed by baking to obtain an intaglio transfer mold in which a conductive material was filled in the recesses.

(Transfer of conductive material to thin film transistor substrate)
A soda lime glass substrate having a thickness of 0.7 mm and a size of 100 mm × 100 mm was used as a thin film transistor substrate. The intaglio transfer mold filled with the conductive material prepared above is coated with a UV curable solventless type adhesive, and after the thin film transistor base material is stacked, the intaglio transfer mold and the thin film transistor base material are passed through a laminator. An adhesive was developed between the two. Subsequently, after the adhesive is cured by UV irradiation from the thin film transistor substrate side, the intaglio transfer mold and the thin film transistor substrate are peeled off, whereby the thin film transistor substrate in which the source / drain electrodes are provided via the adhesive Got.

(Formation of thin film transistors)
A thin film transistor was formed by sequentially providing a semiconductor layer, a gate insulating film and a gate electrode on the thin film transistor substrate on which the source / drain electrodes were formed.
Formation of Semiconductor Layer A thin film transistor substrate on which the source / drain electrodes were formed was spin-coated with a poly (3-hexylthiophene) solution and then dried to form a semiconductor layer.
Formation of gate insulating film An insulating layer forming solution in which polyvinylphenol was dissolved in cyclohexanone was spin-coated on the semiconductor layer and then thermally cured to form a gate insulating film having a thickness of 1 μm.
-Formation of gate electrode Ag was mask-deposited on the gate insulating film to form a gate electrode.

  Finally, vias were formed on the source / drain electrodes to complete a top gate type thin film transistor. As a result of evaluating the gate voltage dependency of the correlation (V-I characteristic) between the drain voltage V and the drain current I, FET characteristics were confirmed.

<Comparative Example 1>
When an attempt was made to form a source / drain electrode having a channel length of 10 μm on a glass substrate by screen printing using a silver paste, the channel could not be formed by the flow of the paste. On the other hand, when a silver paste having a higher viscosity was used, the channel portion could be formed, but the paste was insufficiently leveled and an electrode having a continuous pattern could not be formed.

It is the fragmentary explanatory view which showed an example of the formation method of the thin-film transistor of this invention in the cross section. It is the partial explanatory view which showed the other example of the formation method of the thin-film transistor of this invention in the cross section. It is the fragmentary explanatory view which showed the transfer method which concerns on the formation method of the thin-film transistor of this invention in the cross section. It is explanatory drawing which showed the example of the top gate type thin-film transistor formed by this invention in the cross section. It is the partial explanatory view which showed the example of the thin-film transistor base material concerning the formation method of the thin-film transistor of this invention in the cross section. It is explanatory drawing which showed the other example of the thin-film transistor formed by this invention in the cross section.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Intaglio transfer type 12 ... Intaglio transfer type 121 ... Transfer substrate 122 ... Intaglio bottom material 123 ... Intaglio convex member 21 ... UV curable conductive material 22 ... UV curable conductive material Material 31 ... Intaglio transfer mold filled and cured with conductive material 32 ... Intaglio transfer mold filled and cured with conductive material 41 ... Substrate for thin film transistor 42 ... Base for thin film transistor on which gate electrode is formed Material 43... Thin film transistor base material on which a gate electrode and a gate insulating film are formed 5... Adhesive 6... Source / drain electrode 71 ... Gate insulating film 73 ... Gate insulating film 81 ... Gate electrode 82 ... Gate electrode 83 ... Gate electrode 91 ... Semiconductor layer 92 ... Semiconductor layer 93 ... Semiconductor layer

Claims (3)

  1. An intaglio bottom material that has UV light transmission and a release property to the cured UV curable conductive material, a light shielding property and the cured UV curable conductive material. The intaglio convex member having releasability is laminated, and the UV curable conductive material is applied to the entire plate surface of the intaglio transfer mold in which the concave portion has at least the pattern of the source / drain electrodes and dried, and then the transfer die The concave plate conductive material is cured by irradiating UV light from the substrate side, and then the uncured portion of the conductive material is developed and removed, and then the intaglio transfer mold with the adhesive for the thin film transistor base material. And then separating the thin film transistor substrate together with the adhesive from the intaglio transfer mold and transferring the conductive material to the thin film transistor substrate through the adhesive to form source / drain electrodes. This Method of forming a thin film transistor according to claim.
  2. 2. The method of forming a thin film transistor according to claim 1 , wherein the adhesive has an insulating property and a gate electrode is formed as the thin film transistor base material.
  3. 2. The method of forming a thin film transistor according to claim 1 , wherein a thin film transistor substrate having a gate electrode and a gate insulating film formed thereon is used.
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KR101223023B1 (en) 2006-12-04 2013-01-17 엘지전자 주식회사 Method of preparing electrode of solar cell, method of preparing solar cell, and solar cell
WO2010117102A1 (en) * 2009-04-09 2010-10-14 서강대학교 산학협력단 Method for aligning colloidal crystals as single crystals
US9516749B2 (en) 2012-07-04 2016-12-06 Panasonic Intellectual Property Management Co., Ltd. Electronic component-mounted structure, IC card and COF package
CN104157695B (en) * 2014-07-14 2017-02-15 京东方科技集团股份有限公司 Thin film transistor, as well as preparation method, array substrate and display device thereof

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JPH0775909B2 (en) * 1990-09-28 1995-08-16 大日本印刷株式会社 Alignment transfer method
JPH04135888A (en) * 1990-09-28 1992-05-11 Dainippon Printing Co Ltd Pattern transfer method
JPH05147360A (en) * 1991-11-27 1993-06-15 Dainippon Printing Co Ltd Forming method for fine pattern
JP2593995B2 (en) * 1992-02-28 1997-03-26 株式会社ジーティシー Method of forming a fine pattern
JP3106690B2 (en) * 1992-06-02 2000-11-06 ソニー株式会社 Film forming method
JPH07273009A (en) * 1994-03-31 1995-10-20 Toppan Printing Co Ltd Manufacture of thick film pattern
JP2003218329A (en) * 2001-11-15 2003-07-31 Sekisui Chem Co Ltd Method for manufacturing temporary transfer substrate and tft circuit board
JP2004031933A (en) * 2002-05-09 2004-01-29 Konica Minolta Holdings Inc Method for manufacturing organic thin-film transistor, and organic thin-film transistor and organic transistor sheet manufactured using the same
JP4281324B2 (en) * 2002-10-23 2009-06-17 コニカミノルタホールディングス株式会社 Organic thin film transistor device, its manufacturing method, and organic thin film transistor sheet
JP4124455B2 (en) * 2003-06-24 2008-07-23 株式会社リコー Wiring transfer sheet, wiring board, and transistor manufacturing method

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