JP4835334B2 - High frequency signal transmission device - Google Patents

High frequency signal transmission device Download PDF

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JP4835334B2
JP4835334B2 JP2006242098A JP2006242098A JP4835334B2 JP 4835334 B2 JP4835334 B2 JP 4835334B2 JP 2006242098 A JP2006242098 A JP 2006242098A JP 2006242098 A JP2006242098 A JP 2006242098A JP 4835334 B2 JP4835334 B2 JP 4835334B2
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resonator
high
resonators
frequency signal
transmission device
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JP2008067012A (en
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弘明 佐藤
泰夫 大野
郁雄 粟井
良太 菅
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国立大学法人徳島大学
学校法人 龍谷大学
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Description

  The present invention relates to a transmission device that transmits a high-frequency signal.

  In recent years, the speed of internal operations has been increasing in semiconductor chips such as digital LSIs, and the internal clock signal has exceeded 2 GHz. However, the speed at which such a high-frequency signal is taken out of the semiconductor chip remains at about 800 MHz. The reason is that signal extraction from a semiconductor chip to a substrate made of resin or ceramic is performed using a metal wiring such as a bonding wire. In these wirings, bonding pads and bonding wirings cause unstable parasitic capacitance and parasitic inductance, and this part causes deterioration of high-frequency signals. In addition, in order to efficiently transmit a high-frequency signal to the outside of the semiconductor chip, transmission loss occurs due to reflection and unnecessary radiation unless the impedance matching is adjusted accurately. In particular, in an apparatus using electrical connection, problems such as connection machining accuracy and connection reliability also occur.

  In order to solve this problem, researches have been made on optical wiring and optoelectronic integrated circuit technology for exchanging signals between a semiconductor chip and the outside using light (see Patent Document 1).

  In addition, there is a method (Patent Documents 2, 3, and 4) using an antenna that is used for general wireless communication to exchange signals between the semiconductor chip and the outside. In addition, there is a method of using magnetic field coupling using a coil (Patent Documents 5 and 6). The idea is to apply techniques used in low frequency circuits such as inductive coupling and capacitive coupling to the transmission of high frequency signals between different substrates. In addition, a method using a slot antenna (Patent Document 7), a method using a ring slot (Patent Document 8), a method using a dielectric resonator (Patent Document 9), and a method using a slot formed in a metal plate (Patent Document 10). ) Etc. have been proposed. These wireless connections are possible with a combination of existing semiconductor technologies.

  Furthermore, Non-Patent Document 1 discloses a method for transmitting an RF signal between substrates by opposing one-side open rectangular λ / 4-TE mode resonators arranged at the ends of a line and electromagnetic coupling between the resonators. ing.

Non-Patent Document 2 describes a filter in which two open ring resonators are electromagnetically coupled as a filter for extracting a signal having a wide band frequency. However, this is used as a band-pass filter, and is not used when a signal on a certain board is wirelessly transmitted to another board.
JP2002-9379 (released on January 11, 2002) JP-A-11-68033 (published on March 9, 1999) JP 2004-327568 (released November 18, 2004) JP 2000-68904 (released on March 3, 2000) JP 2005-203657 (released July 28, 2005) JP 2005-222891 (released on August 25, 2005) JP-A-6-85513 (published on March 25, 1994) JP 2000-269708 (released September 29, 2000) JP 2004-159247 A (released on June 6, 2004) JP 2004-187281 (released July 2, 2004) Kazutaka Mukayama et al., "60GHz band non-contact circuit connection structure using electromagnetic coupling", Electronics Society Conference of IEICE, C-2-95, 2004 IKuo Awai, "Open Ring Resonators Applicable to Wide-band BPF", 2006 Radiation Science Study Group Material RS06-02, May 23, 2006

  However, when the optical wiring technique is applied to a semiconductor chip as in Patent Document 1, since the constituent materials of the light emitting element and the semiconductor chip are different, a combination of different materials is required. Therefore, there are many technical and cost issues. Furthermore, energy loss is involved in signal conversion from electricity to light and from light to electricity.

  Moreover, since the antennas as disclosed in Patent Documents 2 to 4 are devices for radiating electromagnetic waves into the air, most signals are emitted into the air, and only a part of the signals reach the receiving side. On the other hand, in magnetic field coupling as in Patent Documents 5 and 6, a magnetic field generated in a coil is received by an adjacent coil and converted into a current. In this case as well, most of the magnetic field lines pass through the receiving coil and dissipate into the air. For this reason, in these documents, a method of transmitting signals to a large number of chips by utilizing the characteristic of being diffused into the air is proposed.

  However, dissipating signals into the air reduces the signal strength on the receiving side and lowers the sensitivity, increases the probability of malfunction, and places a major limitation on implementation that requires a receiving amplifier beside the receiving antenna. receive. Since it is also necessary to increase the output, it is a disadvantage in terms of reducing power consumption. In addition, signals emitted into the air are noise for other chips, causing problems of electromagnetic interference. Also in the techniques of Patent Documents 7 to 10, the transmission efficiency is low and the loss is large.

  In addition, low-frequency circuit coupling techniques such as inductive coupling and capacitive coupling have no concept of matching, and the design policy is that the signal only has to be transmitted between terminals, so high-frequency signals generated by expensive high-frequency signal sources can be used. It cannot be applied to technology for efficient transmission without waste.

  Further, Non-Patent Document 1 has a narrow-side structure in which resonators formed on end portions of different substrates are arranged in the same plane. Therefore, the coupling between the two resonators is weak, and the distance between the two substrates needs to be almost zero. On the other hand, when signal transmission is performed between different substrates, it is necessary to secure a certain distance between the substrates due to restrictions such as circuits other than the resonator. Therefore, the technique of Non-Patent Document 1 cannot be applied to signal transmission between different substrates that are spaced apart.

  The present invention has been made in view of the above problems, and an object thereof is to realize a high-frequency signal transmission device capable of efficiently transmitting a high-frequency signal between circuits on different planes that are separated from each other. There is to do.

  In order to solve the above problems, a high-frequency signal transmission device according to the present invention is a high-frequency signal transmission device that transmits a high-frequency signal between circuits on different planes. A resonator having an open structure or a spiral structure and an input / output line connected to the resonator and inputting / outputting a high frequency signal to / from the resonator are formed on both the planes. The resonators are electromagnetically coupled to transmit a high-frequency signal.

  Here, the high frequency signal is, for example, a microwave or a millimeter wave.

  According to the above configuration, the resonator and the input / output line are connected on each plane. Impedance matching between the resonator and the input / output line can be adjusted by a connection position between the resonator and the input / output line. The resonators formed on different planes are electromagnetically coupled to each other. At this time, since the resonator has a structure in which a part of the closed curve line is opened or a spiral structure, the coupling between the resonators becomes strong. Therefore, even if the distance between the resonators is increased to some extent, a high-frequency signal can be efficiently transmitted between the resonators. As a result, interference between circuits on different planes can be reduced.

  For example, when both resonators have an open ring shape with a diameter of 0.24 mm, a line width of 0.045 mm, and an open portion width of 0.02 mm, and a sapphire substrate is inserted between the resonators, the distance between the resonators is 0.2 mm. Even if it is expanded to 50, the transmission band where the transmission efficiency is 50% or more is 57-60 GHz. In particular, the transmission efficiency was 97% at 59.5 GHz, and it was confirmed that there was no unnecessary radiation.

  Thus, with the above configuration, it is possible to realize a high-frequency signal transmission device that can efficiently transmit a high-frequency signal between circuits on different planes that are separated from each other without waste.

  Furthermore, in the high-frequency signal transmission device of the present invention, in addition to the above configuration, the line length of the resonator is preferably an odd multiple of 1/2 of the wavelength of the high-frequency signal. Thereby, the resonator and the resonance wavelength are matched. Furthermore, since the line length of the resonator is ½ of the wavelength of the high frequency signal, the potentials at both ends of the line of the resonator are in reverse phase. Since the resonator has a structure in which a part of the closed curve line is opened or a spiral structure, the distance between both ends is short, and radiation of electromagnetic waves from the resonator to the outside can be prevented. As a result, the transmission efficiency between the resonators can be increased.

  Furthermore, in the high-frequency signal transmission device of the present invention, in addition to the above-described configuration, the center axes of the resonators provided on the two planes coincide with each other, or end portions of the two resonators from the coincident positions. It is preferable that they are shifted in the direction in which they approach each other. As a result of the simulation, it was found that even if the resonators are shifted in a direction in which the end portions of the resonators approach each other, the transmission efficiency is almost the same as when the center axes of the resonators coincide. For this reason, a high frequency signal can be transmitted efficiently.

  Furthermore, in addition to the above configuration, the high-frequency signal transmission device of the present invention includes a line connecting the end portion and the center point of one resonator and a line connecting the end portion and the center point of the other resonator. The formed angle is preferably 90 degrees or more. According to this configuration, the coupling between the two resonators that are electromagnetically coupled becomes stronger. As a result, the restriction on the distance between the resonators or the restriction on the medium between the resonators is relaxed. That is, the distance between the resonators can be increased, and a substance having a relatively low dielectric constant can be used as a medium between the resonators. The angle is most preferably 180 degrees.

  Furthermore, in the high frequency signal transmission device according to the present invention, in addition to the above configuration, the distance between the resonators provided on both planes is 0.15 times or less the wavelength of the medium between the resonators of the high frequency signal. It is preferable that

  It can be seen that if the distance between the resonators exceeds 0.15 times the wavelength in the medium between the resonators of the above-mentioned high-frequency signal to be transmitted, unnecessary radiation occurs and the transmission efficiency between the resonators decreases. It was. Therefore, with the above configuration, high transmission efficiency can be realized.

  Note that 0.15 times the wavelength of the medium between the resonators of the high-frequency signal is, for example, about 0.25 mm when the resonance frequency is 60 GHz and the medium between the resonators is sapphire. With such a distance, interference between circuits on different planes is not a big problem.

  Furthermore, in addition to the above-described configuration, the high-frequency signal transmission device of the present invention has a metal film, an insulating film on the substrate when at least one of the planar resonators is formed on a conductive substrate. The resonators are preferably stacked in this order.

  The plane is usually the surface of a substrate such as sapphire or silicon, and the circuit / resonator / input / output line is formed on the substrate.

  If the substrate is insulative like sapphire or the like, there is no problem. However, when the substrate has conductivity such as silicon, the substrate absorbs electromagnetic waves generated by the resonator, loss occurs, and transmission efficiency decreases.

  However, according to the above configuration, since the metal film exists between the resonator and the substrate, it is possible to prevent the electromagnetic wave generated by the resonator from being absorbed by the substrate.

  Further, in the high-frequency signal transmission device of the present invention, in addition to the above configuration, each of the two planes is a surface of a different substrate, and the resonators formed on the two substrates are opposed to each other. It is preferable that a substrate is disposed and an insulating sheet is sandwiched between the substrates.

  According to the above configuration, for example, when a high-frequency signal is transmitted from an LSI to a circuit on another plane, the distance between the surface of the substrate on which the LSI is mounted and the other plane is uniformly maintained by the film thickness of the sheet. it can. For example, by placing the thin sheet on a circuit board on which a high-frequency wiring circuit and the resonator are formed, and placing the LSI chip on which the resonator is formed on the circuit board, the high-frequency signal can be easily generated. A transmission system can be realized. Conventionally, in prober measurements in LSI and other product inspections, metal needles were applied to the pads, but with the above configuration, measurements can be made with light contact with a thin insulating sheet sandwiched between them and reliability. There are merits such as improving the quality and leaving no scratches on the pad. The DC power source may be transmitted by direct metal contact or may be obtained by rectifying a high-frequency signal. When rectifying a high-frequency signal, LSI measurement and operation can be performed without contact.

  Furthermore, in addition to the above configuration, the high-frequency signal transmission device of the present invention is provided in a power transmission device in which one of the resonators transmits power, and the other resonator in the power receiving device that receives the power. Is provided.

  According to this, power transmission to vehicles and electrical appliances can be efficiently realized.

  A high-frequency signal transmission device according to the present invention is a high-frequency signal transmission device that transmits a high-frequency signal between circuits on different planes, and has a structure in which a part of a closed curved line is opened on both the planes or a spiral structure. And an input / output line that is connected to the resonator and inputs and outputs a high-frequency signal to the resonator. The resonators formed on the two planes are electromagnetically coupled to each other. To transmit a high-frequency signal. Therefore, it is possible to realize a high-frequency signal transmission device that can efficiently transmit a high-frequency signal between circuits on different planes without waste.

  One embodiment of the high-frequency signal transmission device of the present invention will be described below with reference to FIGS.

  The high-frequency signal transmission device according to the present embodiment is a device that wirelessly transmits a high-frequency signal having a specific frequency between circuits formed on different planes.

  High-frequency signals (hereinafter referred to as transmission signals) transmitted by the high-frequency signal transmission device are, for example, microwave and millimeter wave band signals.

(About the structure of the high-frequency signal transmission device)
FIG. 1 is a perspective view showing a main configuration of a high-frequency signal transmission device 1 of the present embodiment. As shown in FIG. 1, the high-frequency signal transmission device 1 includes a resonator 2 (2 a and 2 b) formed on each of two different planes Pa and Pb separated by a predetermined inter-surface distance. ) And input / output lines 3 (3a and 3b) for inputting and outputting signals to the resonator 2. In addition, the code | symbol of the resonator and input / output line which were formed on the plane Pa is set to 2a and 3a, and the code | symbol of the resonator and input / output line which was formed on the plane Pb is set to 2b and 3b.

  FIG. 2 is a top view showing the resonator 2 and the input / output line 3 formed on each plane. As shown in FIG. 2, the resonator 2 is opened at one portion of the closed curve line (the open portion 21 (hereinafter, the open portion of the resonator 2 a is 21 a and the open portion of the resonator 2 b is 21 b)). It is a structure that is cut (cut). That is, the resonator 2 is not circular. Specifically, the resonator 2 is an open ring resonator from which a part of wiring of the ring resonator is removed. The line length of the resonator 2 is set to be an odd multiple of 1/2 of the wavelength of the transmission signal. Here, the line length of the resonator 2 is the length of the line from one end portion forming the open portion 21 to the other end portion, as shown in FIG.

  As shown in FIG. 2, the input / output line 3 is a coplanar line sandwiched between two ground electrodes 4. By adjusting the connection position (attachment position) 22 between the input / output line 3 and the resonator 2, impedance matching between the resonator and the input / output line becomes possible. Here, by appropriately setting an angle θ1 formed by a line connecting the center point of the resonator 2 and the open portion 21 and a line connecting the center point and the attachment position 22 (hereinafter referred to as an attachment angle), impedance 1 Matching is possible. Therefore, the input / output line 3 is designed to be connected to the resonator 2 at an attachment position 22 where impedance matching is possible in order to input / output a transmission signal to / from the resonator 2 without reflection.

  As shown in FIG. 1, the two resonators 2a and 2b on the different planes Pa and Pb have the same center axis, and the open portions 21a and 21b are located with respect to the center axis. Are arranged so as to be symmetrical positions (positions shifted by 180 degrees). Thereby, the coupling between the resonators 2a and 2b becomes stronger.

  Each resonator 2, the input / output line 3 and the ground electrode 4 connected to the resonator 2 are formed on one surface of a different substrate as shown in FIG. That is, the resonator 2a, the input / output line 3a, and the ground electrode 4a are formed on one surface Pa of the substrate 10a, and the resonator 2b and the input / output line 3b are formed on one surface Pb of the substrate 10b. And the ground electrode 4b is formed. The substrate 10a and the substrate 10b are arranged with the spacer plate 5 interposed therebetween so that the surfaces on which the resonators 2a and 2b are formed face each other.

  The substrates 10a and 10b are substrates on which circuits are formed, for example, sapphire substrates on which MMICs based on gallium nitride AlGaN / GaN HFFT are mounted. The spacer plate 5 is made of an insulator and is, for example, a sapphire substrate or a resin film.

(Production method)
The high-frequency signal transmission device of this embodiment can be manufactured by a conventional integrated circuit creation technique. The gallium nitride FET is formed on the sapphire substrate 10. The thickness of the sapphire substrate 10 is generally 0.3 mm to 0.5 mm, but can be easily reduced to 0.1 mm by polishing or grinding techniques. Then, gallium nitride is grown on the substrate 10 by MOCVD or the like. The isolation portion that does not become the active layer is increased in resistance by surface etching, ion implantation, or the like. In this portion, an input / output line 3 and a resonator 2 having a coplanar structure are formed. The size of the resonator 2 depends on the frequency of the transmission signal, but is about 0.3 mm in the 60 GHz band, and it is sufficient that the accuracy is about 1 μm. With the current integrated circuit technology, the accuracy can be easily created. For example, a metal pattern is formed by gold plating or the like.

  The spacer plate 5 sandwiched between the two substrates may be made of a material having high electrical resistance and low loss at high frequencies, such as glass or plastic, when it is desired to reduce the cost. In order to reduce the size of the resonator 2, it is preferable to use a ceramic plate or sapphire plate having a high dielectric constant.

  Between the two substrates, the resonators 2 are arranged so that the center axes thereof coincide with each other and the open portion 21 is symmetric with respect to the center axis. For example, in the case of a ceramic or plastic substrate, if a notch that prescribes the position of the other substrate is provided in advance, the alignment can be easily performed.

(Transmission mechanism)
According to the high-frequency signal transmission device 1 of the present embodiment, a transmission signal input to one resonator 2a can be wirelessly transmitted to the other resonator 2b that is electromagnetically coupled to the resonator 2a. Hereinafter, a transmission mechanism between the resonators 2a and 2b will be described.

  In general, the resonator can be formed of a line that is an integral multiple of ½ wavelength. However, this structure is the same as the structure of the antenna, and electromagnetic waves are radiated not only between the resonators but also in free space, so that efficient transmission cannot be performed. However, the resonator 2 of the present embodiment has a structure in which a line having an odd line length that is ½ of the wavelength of the transmission signal is formed in a ring shape and both ends thereof are close to each other. For this reason, the potentials at both ends of the resonator 2 are in opposite phases, and radiation of electromagnetic waves into the free space can be greatly reduced. That is, since the resonator 2 has an effect of confining a signal, unnecessary radiation to the outside is extremely reduced.

  On the other hand, between the two open-ring resonators 2 that are broad-side coupled, the electric and magnetic fields are strongly coupled. Therefore, strong electromagnetic coupling occurs between the resonators 2a and 2b arranged at positions separated by a predetermined distance. As a result, a transmission signal is transmitted from one resonator 2a to the other resonator 2b.

Further, the open portions 21a and 21b of both the resonators 2a and 2b are arranged at symmetrical positions with respect to the central axes of the resonators 2a and 2b. 4, when changing the angle theta 2 of the line connecting the opening portion 21a · 21b and the central axis of each resonator 2a · 2b, the coupling coefficient (right axis) and resonance frequency between the resonators 2a · 2b It is a graph which shows (left axis). 4 shows that the diameter of the open ring resonator 2 is 59.52 mm, the line width is 1 mm, the width of the open portion 21 (the distance between both ends of the resonator 2) is 0.5 mm, and the resonators 2a and 2b. This is the result when the vertical distance between them is 0.28 mm, and the dielectric constant of the medium (spacer plate 5) between the resonators 2a and 2b is 3.27. As shown in FIG. 4, the coupling between the open portions 21 of the two resonators 2 increases as the angle between the resonators 2 increases, and the most when the resonators 2 are arranged at symmetrical positions with respect to the central axis of the resonator 2. The coupling between the resonators 2a and 2b is strengthened. As a result, signal transmission between the resonators 2a and 2b can be efficiently performed.

The stronger the coupling between the resonators, the higher the transmission efficiency, even if the distance between the resonators is longer. However, as shown in FIG. 4, each of the resonators 2a · 2b open portion 21a · 21b and the central axis and the angle theta 2 of the line connecting the is equal to or larger than 90 degrees, to obtain a more coupling coefficient 0.5 be able to. The strength of the coupling also depends on the dielectric constant of the spacer plate 5 between the resonators 2a and 2b. Therefore, if the angle θ 2 is 90 degrees or more, a signal can be transmitted between the resonators with high transmission efficiency by appropriately setting the material of the spacer plate 5 and the distance between the resonators 2a and 2b. Thus, the angle θ 2 formed by the line connecting the open portions 21a and 21b of the resonators 2a and 2b and the central axis is preferably 90 degrees to 180 degrees, and most preferably 180 degrees.

(Modification 1)
In the above description, the resonator 2 is described as an open ring. However, the shape of the resonator 2 is not limited to this, and various shapes can be considered. However, in order to efficiently transmit signals between the resonators 2 on different planes, the coupling between the resonators 2 is strong, a part of the closed curve line (open portion 21) is open, or a spiral The shape (spiral) is preferable. For example, a U shape as shown in FIG. 5 or a spiral shape as shown in FIG. 6 may be used.

  When a spiral resonator is used, the line length becomes longer than the occupied area, so that the occupied area of the resonator can be reduced. Even if the occupied area is reduced, it is not necessary to reduce the distance between the resonators. The main cause of the deterioration of the coupling between the resonators is dissipation of electromagnetic energy due to an unnecessary mode, which is determined by the distance between the resonator surfaces and is not directly related to the size of the occupied area. Therefore, it is not necessary to reduce the distance between the resonators in order to maintain the coupling strength between the resonators.

  Further, it is preferable that the resonator 2 has a line length that is an odd multiple of 1/2 of the transmission signal wavelength, and that both ends thereof are close to each other. Specifically, it is desirable that the distance between both end portions (that is, the width of the open portion 21) is ¼ or less of the signal wavelength. Thereby, unnecessary electromagnetic wave radiation can be prevented, and the coupling between the resonators can be further strengthened.

  For example, if it is U-shaped like FIG. 5, since the edge parts are approaching, unnecessary radiation to the outside can be prevented and the phase relationship with the other resonator can be matched. In addition, as shown in FIG. 6, even if both ends are spiral resonators located in the same direction from the central axis, the ends are close to each other, thereby preventing unnecessary radiation to the outside, and The phase relationship with the other resonator can be matched.

(Modification 2)
In the above description, the two resonators 2a and 2b are formed on different substrates 10a and 10b, and the substrates 10a and 10b are arranged so that the surfaces on which the resonators 2a and 2b are formed face each other. The spacer plate 5 is sandwiched between them. However, the configuration of the high-frequency signal transmission device of the present embodiment is not limited to this, and it is only necessary that the two resonators 2a and 2b to be coupled are arranged on different planes.

  For example, as shown in FIG. 7, two resonators 2a and 2b are formed on the front and back surfaces of one substrate 10, and a transmission signal is wirelessly transmitted from one resonator 2a to the other resonator 2b. You can also In this case, the substrate 10 also functions as the spacer plate 5 positioned between the resonators. Note that the high-frequency signal transmission device shown in FIG. 7 may be manufactured using a double-sided mask aligner.

  Alternatively, as shown in FIG. 8, two resonators 2a and 2b are formed on different substrates 10a and 10b, respectively, the surface of one substrate 10b on which the resonator 2b is formed, and the other substrate Both substrates 10a and 10b may be arranged so as to face the surface of the resonator 10a on which the resonator 10a of 10a is not formed. In this case, the substrate 10a is disposed as the spacer plate 5 between the two resonators 2a and 2b.

  Further, as shown in FIG. 8, a plurality of high-frequency signal transmission devices according to this embodiment can be used to wirelessly connect circuits formed on three or more substrates. FIG. 8 shows an example in which two different substrates 10b and 10c arranged on the same plane are connected by a connection substrate 10a on which two resonators 2a and 2a 'and an input / output line 3a are formed. On the substrate 10a, two resonators 2a and 2a 'are connected by an input / output line 3a. The resonator 2a is disposed at a position where it can be coupled with the resonator 2b on the substrate 10b, and the resonator 2a 'is disposed at a position where it can be coupled with the resonator 2c on the substrate 10c. Thus, the signal on the substrate 10b is transmitted in the order of resonator 2b → resonator 2a → resonator 2a ′ → resonator 2c.

  As a specific example of the configuration as shown in FIG. That is, an ultrahigh-speed LSI (for example, silicon VLSI) using a 60 GHz band signal is mounted on the lower substrate 10b / substrate 10c, and the upper substrate 10a is, for example, a glass plate, and resonates at both ends thereof. In this structure, the resonators 2a and 2a ′ are placed and the resonators 2a and 2a ′ are connected by the input / output line 3a. Thus, on the upper substrate 10a, a large number of resonators 2a and 2a 'and input / output lines 3a are arranged for the substrates 10b and 10c on which the ultrahigh-speed LSI is mounted. Thereby, signal connection between ultrahigh-speed LSIs becomes possible. Further, in the case of the 60 GHz band, the resonators coupled to each other can be manufactured at low cost because an alignment error of about 0.1 mm is allowed, as will be described later. In recent assembly robots, positioning is possible with an accuracy of 20 μm.

  Further, a high-speed LSI mounting substrate can be created by inverting FIG. 8 up and down and forming a large number of resonators and lines on a substrate consisting only of the resonator 2 and the transmission line. In that case, only the DC power source may be formed by direct metal connection such as flip chip.

  Further, a multilayer wiring can be formed by combining a plurality of substrates made of the resonators 2. In this case, as shown in FIG. 33, open ring resonators 2 (2-1 to 2-4) rotated 180 degrees in the same place are alternately stacked, and the uppermost and lowermost resonators 2 (2 The input / output lines 3 (3-1, 3-4) are connected to (-1, 2-4). With this configuration, a signal can be propagated between the upper and lower surfaces of a thick substrate. If this method is used, an equivalently thick insulating film is formed by placing no metal wiring pattern other than the portion of the high-frequency signal transmission device 1 on a plurality of thin insulating substrates, and between the upper and lower substrates other than the high-frequency signal transmission device 1 Signal interference can be avoided.

  Note that a spacer plate is not necessarily required between the resonators, and a configuration in which only air exists may be employed.

(Modification 3)
In the above description, sapphire that is an insulator is taken as an example of the substrate 10 on which the resonator 2 is formed. However, the material of the substrate 10 is not limited to this. For example, silicon may be used. However, since silicon has a certain degree of conductivity, the electromagnetic wave generated in the resonator 2 generates a current in the silicon substrate and causes Joule loss. In order to prevent this loss, there are a method of thinning the silicon substrate and a method of making it semi-insulating with heavy metal or the like. However, the following method that can be easily realized in silicon integrated circuit technology is preferable.

  That is, as shown in FIG. 9, a metal film 11 such as copper or gold is deposited on a silicon substrate 10 and the metal film 11 is grounded. Next, an insulating film (for example, silicon oxide film) 12 is laminated on the metal film 11, and the resonator 2, the input / output line 3, and the ground electrode 4 are formed thereon. Note that a CVD method or the like may be used as a method for forming the insulating film 12.

  Since the metal film 11 is formed between the silicon substrate 10 and the resonator 2, the electromagnetic wave generated by the resonator 2 can be prevented from being absorbed by the substrate 10.

  In addition, since the thin insulating film 12 is formed between the resonator 2 and the metal film 11, the capacitance between the resonator 2 and the metal film 11 increases. By adjusting the attachment position 22 of the input / output line 3, impedance matching between the input / output line 3 and the resonator 2 becomes possible.

(simulation result)
(When the spacer plate is sapphire)
FIG. 10A is a perspective view of the high-frequency signal transmission apparatus 1 that has performed a three-dimensional electromagnetic field simulation (software used: “HFSS” manufactured by Ansoft). FIG. 10B shows a cross-sectional view of the high-frequency signal transmission device 1. As shown in FIGS. 10A and 10B, a metal film, a sapphire substrate 10, a resonator 2, a sapphire spacer plate 5, a resonator 2, a sapphire substrate 10, and a metal film laminated in this order. A simulation of the signal transmission device 1 was performed. The resonator 2 has a half-wave line length of the transmission signal and has an open ring shape as shown in FIG. In addition, the resonator 2 was designed so that it couple | bonds in 60 GHz vicinity, and the simulation was performed. Specifically, the outer diameter D of the open ring resonator 2 is 0.24 mm, the line width a is 0.045 mm, the gaps at both ends of the resonator 2 (that is, the width of the open portion 21) p = 0. 02 mm, the substrate 10 and the spacer plate 5 were all assumed to be sapphire, and the thickness and relative dielectric constant were 0.2 mm and 10, respectively.

  The input / output line 3 is a coplanar line (characteristic impedance: 50Ω).

The impedance matching between the input / output line 3 and the resonator 2 can be adjusted by the attachment position 22 of the input / output line 3 to the resonator 2. FIG. 11 shows an attachment angle between a line connecting the center point of the open ring resonator 2 and the open portion 21 and a line connecting the center point and the attachment position 22 in the input / output line 3 and the resonator 2. It is a graph which shows the simulation result of S21 when (theta) 1 (refer FIG. 2) is 18 degree | times, 28 degree | times, and 38 degree | times.

  The index S21 indicating the transmission efficiency of the high-frequency signal is output from the first signal terminal (here, the other resonator 2) received at the second signal terminal (here, one of the two resonators 2 to be coupled). The ratio of the signal, expressed in decibels (dB). 100% is 0 dB, and if there is a loss, it becomes a negative value. Another parameter is S11. S11 is the rate at which the signal at the first signal terminal returns to the first signal terminal again, and S21 decreases accordingly. As a high-frequency signal transmission device, it is preferable that the index S21 is as close to 1 as possible in a desired band, and S11 is as small as possible.

As shown in FIG. 11, when the mounting angle theta 1 is 28 degrees, it is understood S21 that is best. That is, impedance matching is achieved when the mounting angle θ 1 = 28 degrees. Thus, the impedance matching between the input / output line 3 and the resonator 2 can be adjusted by the mounting position 22 where the input / output line 3 is attached to the resonator 2. The optimum attachment angle θ1 varies depending on various parameters.

  FIG. 12 is a graph showing the simulation results of S11 and S21 of the high-frequency signal transmission device 1 that has been adjusted for impedance matching (that is, one that is set to an attachment angle of 28 degrees). As shown in FIG. 12, resonance occurred from 57 to 61 GHz, and S11 reached a peak value at 59.5 GHz. The values at that time are S21 = −0.16 dB (transmission efficiency about 97%) and S11 = −26 dB, and it can be seen that transmission can be performed with almost no unnecessary radiation. The frequency band (hereinafter referred to as the transmission band) at which the transmission efficiency is 50% is 57 to 61 GHz, and 7% of the center frequency is secured.

  A simulation was performed when the thickness of the spacer plate 5, that is, the distance between the resonators 2 was changed under the above setting conditions. FIG. 13 is a graph showing the simulation results of the indicators S11 and S21 of the transmission signal of 60 GHz. As FIG. 13 shows, it turns out that S21 falls as the thickness of the spacer board 5, ie, the distance between the resonators 2, becomes large. In particular, when the thickness of the spacer plate 5 exceeds 0.25 mm, the reduction rate increases. On the other hand, S11 is a small value regardless of the thickness of the spacer plate 5. Therefore, it can be seen that a part of the transmission signal is released into the air as the distance between the resonators 2 increases. The wavelength of the 60 GHz transmission signal in sapphire is about 1.67 mm. Therefore, it is preferable that the distance between the resonators 2 is 0.25 / 1.67 = about 0.15 times or less of the wavelength in the medium between the resonators 2.

(When the spacer plate is a resin film)
Next, as shown in FIG. 14, the spacer plate 5 inserted between the resonators 2 is not a sapphire, but a vinyl sheet having a dielectric constant of about 2 (thickness 0.02 mm to 0.06 mm), and other conditions. Was performed under the same conditions as in FIGS. 10 (a) to 10 (c). 15 to 17 are graphs showing the simulation results. FIG. 15 shows the thickness of the spacer plate 5 of 0.02 mm, FIG. 16 shows the thickness of 0.04 mm, and FIG. 17 shows the thickness of 0.06 mm. It can be seen that when the thickness of the spacer plate 5 which is a vinyl sheet is 0.02 mm, the transmission band at which the transmission efficiency is 50% extends to 35 to 90 GHz. Moreover, even if the thickness of the spacer plate 5 is 0.06 mm, the transmission bandwidth is as high as 33 GHz, so that the high-frequency signal transmission device 1 can function sufficiently.

  Since the strength of the coupling between the resonators 2 depends on the electric flux density between the resonators 2, it varies depending on [distance between the resonators 2] / [dielectric constant of the material filled between the resonators 2]. . That is, the coupling becomes stronger as the distance between the resonators 2 is shorter and the dielectric constant of the substance (here, the spacer plate 5) filled between the resonators 2 is larger. When the coupling between the resonators 2 becomes strong, the transmission band in which the transmission efficiency of signals transmitted between the resonators 2 is 50% or more increases.

  However, in the case of a high-frequency signal transmission device, the frequency of the transmission signal is known in advance, and the distance between the resonators 2 can be increased as long as a transmission band in which the transmission signal can be transmitted can be secured.

(When the substrate is conductive)
Next, on a conductive silicon substrate as shown in FIG. 18, a metal film, a silicon oxide film (3 μm), a resonator, a sapphire substrate (0.1 mm), a resonator, and a silicon oxide film (3 μm). A simulation was performed on the high-frequency signal transmission device 1 in which metal films were laminated in this order. The shape of the resonator is FIG. 10C, the outer diameter D = 0.24 mm, the line width a = 0.045 mm, and the gap p = 0.02 mm between both ends of the resonator 2. FIG. 19 is a graph showing simulation results of S11 and S21 in the high-frequency signal transmission device 1 having the structure of FIG. As shown in FIG. 19, even if a silicon substrate is used, a signal can be efficiently transmitted with a transmission bandwidth of 2 GHz even when the distance between resonators is 0.1 mm.

  FIG. 20 is a graph showing the resonance frequency of the resonator and the coupling coefficient k between the resonators when the thicknesses of the two silicon oxide films are changed. As shown in the figure, when the silicon oxide film becomes thinner, the coupling coefficient between the resonators becomes smaller. This is because as the silicon oxide film becomes thinner, the coupling between the resonator and the metal film becomes stronger, and the coupling between the resonators becomes weaker accordingly. Therefore, in order to increase the coupling between the resonators and make the distance between the resonators as long as possible, the thickness of the silicon oxide film may be increased.

  21 and 22 are graphs showing a cross-sectional view of the high-frequency signal transmission device and a simulation result of S11 and S21 when a resin film having a dielectric constant of 3.6 is used as the spacer plate 5. FIG. FIG. 21 shows the case where the thickness of the resin film is 0.02 mm, and FIG. 22 shows the case where the thickness of the resin film is 0.003 mm. As shown in FIGS. 21 and 22, it can be seen that the transmission band at which the transmission efficiency is 50% is expanded as the thickness of the resin film is reduced.

(When the center axis is shifted)
Each of the above simulations was performed assuming that both resonators overlap so that the central axes of the two resonators to be coupled are the same. However, there is a possibility that the relative position of the resonator may be deviated depending on manufacturing assembly accuracy. Therefore, a simulation was performed when the center axes of the two resonators were shifted.

  FIGS. 24A and 24B are diagrams showing simulation results of transmission efficiency when the center axes of both resonators coincide with each other. FIG. FIG. 24B is a graph when the thickness between the resonators is 0.2 mm. The conditions other than the distance between the resonators are the same as those in the structure shown in FIGS. 10A and 10B, the outer diameter D of the resonator 2 is 0.24 mm, the line width a is 0.045 mm, the resonator 2 gaps (that is, the width of the open portion 21) p = 0.02 mm. The open portions of both resonators are located symmetrically with respect to the central axis.

  Next, the results when the resonator is shifted in the direction connecting the center point of the resonator and the open portion (X direction) will be described. Here, as shown in FIG. 25, when the central axes between the two resonators coincide with each other, the displacement amount x = 0 in the X direction, and the displacement amount x is added to the direction in which the open portion of each resonator approaches. The deviation amount x in the direction in which the open portion of each resonator is separated is represented by minus. FIG. 26 is a top view of both resonators when the deviation amount x = 100 μm, and it can be seen that the open portions of the resonators are approaching each other.

  FIGS. 27A and 27B are diagrams showing simulation results of transmission efficiency when the center axes of both resonators are shifted in the X direction by a shift amount x = 100 μm. FIG. The thickness between the resonators is 0.1 mm, and FIG. 27B is a graph when the thickness between the resonators is 0.2 mm. On the other hand, FIGS. 28A and 28B are diagrams showing simulation results of transmission efficiency when the center axes of both resonators are shifted in the X direction by a shift amount x = −100 μm, and FIG. FIG. 28B is a graph when the thickness between the resonators is 0.1 mm, and FIG. 28B is a graph when the thickness between the resonators is 0.2 mm.

  As shown in FIGS. 27 (a) (b) and 28 (a) (b), it can be seen that there is almost no decrease in transmission efficiency even when the resonator is shifted so that the open part approaches. It was. On the other hand, when the resonator is shifted so that the open part is separated, the transmission efficiency is reduced. However, it was found that the transmission efficiency of the center frequency was 50% or more even when the deviation amount x = −100 μm.

  Next, the results when the resonator is shifted in the Y direction perpendicular to the X direction will be described. FIG. 29 is a diagram showing the deviation in the Y direction, and the two resonators in the figure show the relative positional relationship when the deviation amount in the Y direction is y = −100 μm. FIG. 30 is a top view of both resonators when the displacement y = 100 μm.

  FIGS. 31A and 31B are diagrams showing simulation results of transmission efficiency when the center axis of both resonators is shifted in the Y direction by a shift amount y = 100 μm. FIG. The thickness between the resonators is 0.1 mm, and FIG. 31B is a graph when the thickness between the resonators is 0.2 mm. On the other hand, FIGS. 32A and 32B are diagrams showing simulation results of transmission efficiency when the center axes of both resonators are shifted in the Y direction by a shift amount y = −100 μm. FIG. FIG. 32B is a graph when the thickness between the resonators is 0.1 mm, and FIG. 32B is a graph when the thickness between the resonators is 0.2 mm.

  As shown in FIGS. 31A and 31B and FIGS. 32A and 32B, it is assumed that there is a decrease in transmission efficiency due to the shift of the central axis in the Y direction, or a shift of ± 100 μm in the Y direction. However, it was found that the transmission efficiency of the center frequency can be 50% or more.

  As described above, from the results shown in FIGS. 27A and 27B, there was almost no difference in transmission efficiency when the deviation in the X direction was 0 to 100 μm. Therefore, it is preferable that the center axes of the resonators coincide with each other, or are shifted in a direction in which the end portions of the two resonators approach each other from the coincident position. Further, from the result of FIG. 27, it can be said that the tolerance for the plus side shift in the X direction is large. For this reason, it is preferable that the center axes of both resonators are set as manufacturing target values at positions where the open portions of the resonators approach each other from the coincident positions. Thereby, characteristic variation can be suppressed to the minimum with respect to manufacturing positional deviation.

(Application example)
Next, an application example of the high-frequency signal transmission device of this embodiment will be described.

(Application example 1)
In millimeter-wave wireless communication, it is ideal that the antenna is made of low-cost plastic, the signal amplifier is an integrated circuit using a gallium nitride FET capable of amplifying high output, and the signal processor is a silicon CMOS IC. In recent years, high frequency signals of 60 GHz class are generated even in silicon CMOS due to miniaturization. However, the output voltage is low due to miniaturization, and the signal power is low for use in communication.

  However, the digital signal generated by the silicon VLSI is modulated into a high-frequency signal in the 60 GHz band, and this is transmitted to the integrated circuit by the gallium nitride FET using the high-frequency signal transmission device of the present embodiment and amplified. Then, by using the high-frequency signal transmission device of this embodiment and guiding the amplified high-frequency signal to a plastic antenna, extremely low-cost millimeter-wave wireless communication can be realized.

  In the high-frequency signal transmission device of this embodiment, it is necessary to match the resonance frequency of each of the two resonators with the frequency of the transmitted high-frequency signal. However, the substrate on which the line is formed and the film between the resonators By changing the size of the resonator according to the material, the resonance frequency can be adjusted to the frequency of the transmission signal.

  Further, in order to strengthen the coupling between the two resonators 2, it is preferable that the central axes are aligned as much as possible and the open portion 21 is shifted by 90 degrees or more. Therefore, it is necessary to accurately arrange a silicon CMOS IC, an integrated circuit using a gallium nitride FET, and an antenna. However, from the above simulation results, it is known that even if the deviation is about 0.1 mm, the transmission efficiency and the transmission band hardly change. Therefore, since sufficient transmission efficiency can be obtained without fine alignment of the silicon CMOS IC, the integrated circuit using the gallium nitride FET, and the antenna, it is possible to easily implement these mountings.

(Application example 2)
In digital LSI, a signal of several tens GHz can be generated in a semiconductor chip. However, when a conventional bonding pad or bonding wire is used, the signal cannot be taken out of the semiconductor chip due to reflection or radiation. It was. However, if the high-frequency signal transmission device 1 of this embodiment is used, the high-frequency signal generated in the semiconductor chip can be used when transmitting a high-frequency signal between circuit boards without loss.

  When the signal frequency to be transmitted is 60 GHz, the size of the resonator is about 0.4 mm square. Therefore, ten or more resonators 2 can be arranged per chip of about 4 mm × 4 mm. For example, when the transmission band is 5 GHz, a single line can transmit a digital signal of 5 Gbps or 8 bits at 600 Mbps.

  In addition, by making the resonator spiral, the size of the resonator can be further reduced (about 1/2 of the open ring resonator).

(Application example 3)
A DC power line and a millimeter-wave transmission line are created on a ceramic substrate. A millimeter wave transmission line is provided with a distributor in a planar circuit, and an open ring resonator is provided at the end. Such a substrate is covered with a vinyl-based thin film, and an LSI chip having an open ring resonator is placed on the inside. At this time, the resonator provided at the end of the millimeter wave transmission line and the resonator provided in the LSI chip have the same center axis, and the open portions thereof are symmetrical with respect to the center axis. To place. Thus, both resonators constitute a high-frequency signal transmission device, and a signal of 10 Gbps or more can be transmitted between both resonators. The DC power supply unit uses normal flip chip bonding by opening a hole in the vinyl. Further, since the transmission efficiency is high, it is also possible to send a high-frequency signal to the chip and rectify it to make a DC power source. Such a mounting technique can not only increase the frequency of signals but also prevent contact failure and disconnection, thereby realizing a highly reliable system.

(Application example 4)
The high-frequency signal transmission device of this embodiment can also be used for an IC tester for checking the operation of the chip. Japanese Patent Application Laid-Open No. 2006-105630 has such an application using magnetic field coupling (inductive coupling), but since the transmission efficiency is not high, it is necessary to install a signal amplification circuit near the transmission device serving as a probe. However, since the high-frequency signal transmission device of this embodiment can transmit a signal with almost no loss or interference with a normal impedance line or coaxial cable, the peripheral circuit is greatly simplified. That is, with the configuration shown in FIG. 8, wiring using only passive components similar to the optical wiring can be realized only by the integrated circuit technology.

(Application example 5)
The high-frequency signal transmission device of the present embodiment can also be used for power transmission from a power transmission device to a power reception device. As conventional power transmission techniques, JP-A-2006-174676 and JP-A-2000-342855 are known. However, by using the high-frequency signal transmission device of the present embodiment, it is possible to perform efficient power transmission as compared with the prior art.

  As shown in FIG. 23, a power transmission device 40 on the power supply side is generated by a power source 41, a microwave or millimeter wave signal generation unit 42, a first open ring resonator 43, and the signal generation unit. And a first input / output line 44 for inputting the high-frequency signal to the first open ring resonator 43.

  On the other hand, the power receiving device 50 on the power receiving side includes a second open ring resonator 52 that can be electromagnetically coupled to the first open ring resonator 43, and the second open ring resonator 52 includes the first open ring resonator. A high-frequency signal received from the resonator 43 is impedance-converted to a high voltage and rectified by a diode, and a second input / output line connecting the rectifier circuit 51 and the second open ring resonator 52 53.

  Here, the first open ring resonator 43, the second open ring resonator 52, the first input / output line 44, and the second input / output line 53 are connected to the resonators 2a and 2b shown in FIG. It has the same structure as the output lines 3a and 3b.

  Here, the first open ring resonator 43 of the power transmission device 40 and the second open ring resonator 52 of the power reception device 50 are arranged to face each other with a predetermined distance therebetween. At this time, the resonators 43 and 52 are arranged so that the central axes thereof are the same and the open portion is shifted by 180 degrees with respect to the central axis. Accordingly, the first open ring resonator 43, the second open ring resonator 53, the first input / output line 44, and the second input / output line 53 are configured as the high-frequency signal transmission device 1. As a result, the first open ring resonator 43 and the second open ring resonator 52 are electromagnetically coupled, and the high frequency signal generated by the signal generation unit 42 of the power transmission device 40 can be transmitted to the power reception device 50. . And the power receiving apparatus 50 can obtain direct-current by carrying out impedance conversion of the transmitted high frequency signal to high voltage, and rectifying.

  From the simulation results shown in FIG. 13, if the distance between the resonators is about 0.15 times or less the wavelength in the medium between the resonators, the signal can be transmitted with high transmission efficiency.

  When the signal frequency generated by the signal generation unit 42 is 300 MHz (wavelength = 1 m: medium air), even if the space between the first open ring resonator 43 and the second open ring resonator 52 is air, both It is possible to transfer signals efficiently at a distance of 20 cm between the resonators. Therefore, for example, by installing the power transmission device 40 on the ground and installing the power reception device 50 on the vehicle, power can be sent from the ground to the vehicle.

  Further, when the signal frequency generated by the signal generating unit 42 is 10 GHz (wavelength = 3 cm: medium air), even if the space between the first open ring resonator 43 and the second open ring resonator 52 is air, A signal can be efficiently transferred even when the distance between the two resonators is about 5 mm. Therefore, for example, it can be applied to a charging system for various electric appliances (for example, an electric razor or a notebook computer).

  As described above, the high-frequency signal transmission device 1 according to the present embodiment is a device that transmits a high-frequency signal between circuits on different planes Pa and Pb. Then, on both planes Pa and Pb, a resonator 2 having a structure in which a part of a closed curve line is opened or a spiral structure and a resonator 2 connected to the resonator 2 and having a high frequency with respect to the resonator 2 are used. An input / output line 3 for inputting and outputting signals is formed, and the resonators 2 formed on both the planes Pa and Pb are electromagnetically coupled to transmit a high-frequency signal.

  The impedance matching between the resonator 2 and the input / output line 3 can be adjusted by the attachment position (connection position) 22 between the resonator 2 and the input / output line 3. Then, the resonators 2 formed on different planes Pa and Pb are electromagnetically coupled. At this time, since the resonator 2 has a structure in which a part of the closed curve line is opened or a spiral structure, the coupling between the resonators 2 becomes strong. Therefore, even if the distance between the resonators 2 is increased to some extent, a high-frequency signal can be efficiently transmitted between the resonators 2, and interference between circuits on different planes Pa and Pb can be reduced. It can also be made.

  As described above, the above configuration realizes the high-frequency signal transmission device 1 that can efficiently transmit a high-frequency signal between circuits on different planes Pa and Pb without waste. Can do.

  Further, the line length of the resonator 2 is an odd multiple of 1/2 of the wavelength of the transmitted high-frequency signal. Thereby, the resonator 2 and the resonance wavelength are matched. Furthermore, since the line length of the resonator 2 is ½ of the wavelength of the high-frequency signal, the potentials at both ends of the line of the resonator 2 are in reverse phase. Since the resonator 2 has a structure in which a part of the closed curve line is opened or a spiral structure, the distance between both ends is close, and radiation of electromagnetic waves from the resonator 2 to the outside can be prevented. . Accordingly, the transmission efficiency between the resonators 2 can be increased.

  Furthermore, the center axes of the resonators 2 provided on both the planes Pa and Pb may coincide with each other, or may be shifted in a direction in which the ends of the resonators approach each other from the coincident positions. preferable. Thereby, a high frequency signal can be transmitted efficiently.

  Furthermore, a line connecting the open portion 21a (also referred to as an end portion of the resonator 2a) and the center point in one resonator 2a, and an open portion 21b (also referred to as an end portion of the resonator 2b) in the other resonator 2b. The angle formed by the line connecting the center point is preferably 90 degrees or more.

  According to the above configuration, the coupling between the two resonators that are electromagnetically coupled becomes stronger. As a result, the restriction on the distance between the resonators or the restriction on the medium between the resonators is relaxed. That is, the distance between the resonators can be increased, and a substance having a relatively low dielectric constant can be used as a medium between the resonators. The angle is most preferably 180 degrees.

  Furthermore, it is preferable that the distance between the resonators 2 provided on both planes Pa and Pb is not more than 0.15 times the wavelength in the medium between the resonators 2 of the high-frequency signal to be transmitted.

  It has been found that when the distance between the resonators 2 exceeds 0.15 times the wavelength of the medium between the resonators 2 of the high-frequency signal, unnecessary radiation is generated and the transmission efficiency between the resonators 2 is reduced. Therefore, with the above configuration, high transmission efficiency can be realized.

  Note that 0.15 times the wavelength of the medium between the resonators 2 of the high-frequency signal is, for example, about 0.25 mm when the medium between the resonators 2 is sapphire at a resonance frequency of 60 GHz. With such a distance, interference between circuits on different planes Pa and Pb is not a big problem.

  Further, when the resonator 2 on at least one plane is formed on the conductive substrate 10, the metal film 11, the insulating film 12, and the resonator 2 are laminated on the substrate 10 in this order. Is preferred. Since the metal film 11 exists between the resonator 2 and the substrate 10, it is possible to prevent the electromagnetic wave generated by the resonator 2 from being absorbed by the substrate 10.

  The high-frequency signal transmission device 1 may have the following configuration. That is, each of the two planes Pa, Pb is a surface of a different substrate 10, and the two substrates 10 are arranged so that the resonators 2 formed on the two substrates 10 face each other. In addition, an insulating sheet (spacer plate) 5 is sandwiched between the two substrates 10. Alternatively, a configuration in which one open ring resonator 43 is provided in the power transmission device 40 that transmits power and the other open ring resonator 52 is provided in the power reception device 50 that receives the power may be employed. . Such various applications are conceivable.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

  The present invention can be applied to a system that transmits a high-frequency signal between circuits on different planes, and can also be applied to an integrated circuit or a power transmission application.

It is a perspective view which shows the structure of the high frequency signal transmission apparatus which concerns on this embodiment. It is a top view which shows a resonator and an input / output line. It is a longitudinal cross-sectional view of the high frequency signal transmission apparatus shown in FIG. When varying the angle theta 2 of the line connecting the opening portion and the central axis of each resonator is a graph showing the coupling coefficient between the resonators (right axis) and resonance frequency (left). It is a figure which shows the structure of the modification of a resonator. It is a figure which shows the structure of another modification of a resonator. It is a longitudinal cross-sectional view which shows the modification of the high frequency signal transmission apparatus of this embodiment. It is a longitudinal cross-sectional view which shows another modification of the high frequency signal transmission apparatus of this embodiment. It is a longitudinal cross-sectional view which shows a part of another modification of the high frequency signal transmission apparatus of this embodiment. (A) is a figure which shows the structure of the high frequency signal transmission apparatus which performed the simulation, (b) is sectional drawing of the said high frequency signal transmission apparatus, (c) is the resonator of this high frequency signal transmission apparatus It is a figure which shows a structure. It is a graph which shows the change of S21 by an attachment angle. It is a graph which shows the simulation result of the transmission efficiency in the high frequency signal transmission apparatus shown in FIG. It is a graph which shows the simulation result of parameter | index S11, S21 when changing the thickness of a spacer board. It is a longitudinal cross-sectional view which shows the structure of a high frequency signal transmission apparatus when a spacer board is used as the vinyl-type sheet | seat of about 2 dielectric constant. It is a graph which shows the simulation result of S11 and S21 when a spacer board is made into the vinyl-type sheet | seat (thickness 0.02mm) of about 2 with a dielectric constant. It is a graph which shows the simulation result of S11 and S21 when a spacer board is used as the vinyl-type sheet | seat (thickness 0.04mm) of about 2 with a dielectric constant. It is a graph which shows the simulation result of S11 and S21 when a spacer board is used as a vinyl-type sheet | seat (thickness 0.06mm) with a dielectric constant of about 2. It is a longitudinal cross-sectional view which shows the structure of the high frequency signal transmission apparatus at the time of using a silicon substrate. It is a graph which shows the simulation result of S11 and S21 in the high frequency signal transmission apparatus of FIG. 19 is a graph showing a resonance frequency and a coupling coefficient between resonators when the thickness of the silicon oxide film is changed in the high-frequency signal transmission device shown in FIG. 18. It is a graph which shows the cross-sectional view of the high frequency signal transmission apparatus at the time of using the resin film (thickness 0.02mm) of dielectric constant 3.6 as a spacer board, and the simulation result of S11 and S21. It is a graph which shows the cross-sectional view of the high frequency signal transmission apparatus at the time of using the resin film (thickness 0.003mm) of dielectric constant 3.6 as a spacer board, and the simulation result of S11 and S21. It is a block diagram which shows the structure of the electric power transmission system to which the high frequency signal transmission apparatus of this embodiment is applied. It is a figure which shows the simulation result of the transmission efficiency when the center axis | shaft of both resonators corresponds, (a) is 0.1 mm in thickness between resonators, (b) is the thickness between resonators. It is a graph at the time of 0.2 mm. It is a figure which shows the shift | offset | difference of a X direction. It is a top view of both resonators when the amount of deviation x in the X direction is 100 μm. It is a figure which shows the simulation result of the transmission efficiency when the center axis | shaft of both resonators has shifted | deviated by 100 micrometers in the X direction, (a) is 0.1 mm in thickness between resonators, (b) is between resonators. It is a graph when thickness of is 0.2 mm. It is a figure which shows the simulation result of the transmission efficiency when the center axis | shaft of both resonators has shifted | deviated to -100 micrometers in the X direction, (a) is 0.1 mm in thickness between resonators, (b) is a resonator. It is a graph when the thickness in between is 0.2 mm. It is a figure which shows the shift | offset | difference of a Y direction. It is a top view of both resonators when the amount of displacement y in the Y direction is 100 μm. It is a figure which shows the simulation result of the transmission efficiency when the center axis | shaft of both resonators has shifted | deviated by 100 micrometers in the Y direction, (a) is 0.1 mm in thickness between resonators, (b) is between resonators. It is a graph when thickness of is 0.2 mm. It is a figure which shows the simulation result of the transmission efficiency when the center axis | shaft of both resonators has shifted | deviated to -100 micrometers in the Y direction, (a) is 0.1 mm in thickness between resonators, (b) is a resonator. It is a graph when the thickness in between is 0.2 mm. It is a perspective view which shows a part of another modification of the high frequency signal transmission apparatus of this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 High frequency signal transmission apparatus 2 (2a * 2a '* 2b * 2c) Resonator 3 (3a * 3b * 3c) Input / output track | line 4 (4a * 4b * 4c) Ground electrode 5 Spacer board 10 (10a * 10b) Board | substrate 11 Metal film 12 Insulating film 21 (21a, 21b) Opening portion 22 Installation position (connection position)
Pa-Pb plane

Claims (10)

  1. A high-frequency signal transmission device that transmits a high-frequency signal between circuits on different planes,
    On the both planes, connected portion of the closed curve line is a resonator having an open open ring structure as opening in the mounting position that can be impedance matched to the resonator, a high frequency with respect to the resonator An input / output line that inputs and outputs signals is formed,
    The resonators formed on both the planes are electromagnetically coupled to transmit a high-frequency signal ,
    A high-frequency signal transmission device characterized in that an angle formed by a line connecting an open portion and a center point in one resonator and a line connecting an open portion and a center point in the other resonator is 90 degrees or more .
  2.   2. The high-frequency signal transmission device according to claim 1, wherein a line length of the resonator is an odd multiple of 1/2 of a wavelength of the high-frequency signal.
  3. 3. The center axis of each resonator provided on each of the two planes is coincident or is shifted from the coincident position in a direction in which the open portions of the two resonators approach each other. High-frequency signal transmission device.
  4.   The high-frequency signal transmission device according to claim 1, wherein the angle is 180 degrees.
  5.   The high-frequency signal transmission device according to claim 1, wherein a distance between the resonators provided on both the planes is 0.15 times or less of a wavelength in a medium between the resonators of the high-frequency signal.
  6. When at least one of the planar resonators is formed on a conductive substrate,
    2. The high-frequency signal transmission device according to claim 1, wherein a metal film, an insulating film, and the resonator are stacked in this order on the substrate.
  7. Each of the two planes is a surface of a different substrate,
    2. The high frequency device according to claim 1, wherein the two substrates are arranged so that the resonators formed on the two substrates face each other, and an insulating sheet is sandwiched between the substrates. Signal transmission device.
  8.   2. The high frequency device according to claim 1, wherein impedance matching between the resonator and the input / output line connected to the resonator is adjusted by a connection position between the resonator and the input / output line. Signal transmission device.
  9.   2. The high-frequency signal transmission according to claim 1, wherein one of the resonators is provided in a power transmission device that transmits power, and the other resonator is provided in a power reception device that receives the power. apparatus.
  10. A high-frequency signal transmission device that transmits a high-frequency signal between circuits on different planes,
      On both the planes, there are a resonator having a structure in which a part of a closed curve line is opened or a spiral structure, and an input / output line that is connected to the resonator and inputs and outputs a high-frequency signal to the resonator. Formed,
      The resonators formed on both the planes are electromagnetically coupled to transmit a high-frequency signal,
    When at least one of the planar resonators is formed on a conductive substrate,
      A high-frequency signal transmission device, wherein a metal film, an insulating film, and the resonator are stacked in this order on the substrate.
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