JP4816034B2 - 処理方法及び処理装置 - Google Patents
処理方法及び処理装置 Download PDFInfo
- Publication number
- JP4816034B2 JP4816034B2 JP2005347614A JP2005347614A JP4816034B2 JP 4816034 B2 JP4816034 B2 JP 4816034B2 JP 2005347614 A JP2005347614 A JP 2005347614A JP 2005347614 A JP2005347614 A JP 2005347614A JP 4816034 B2 JP4816034 B2 JP 4816034B2
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- JP
- Japan
- Prior art keywords
- vapor deposition
- gas
- nozzle
- jet port
- port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003672 processing method Methods 0.000 title claims description 9
- 239000007789 gas Substances 0.000 claims description 124
- 238000007740 vapor deposition Methods 0.000 claims description 119
- 239000000463 material Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 23
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000004380 ashing Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 19
- 239000011368 organic material Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 239000001307 helium Substances 0.000 description 12
- 229910052734 helium Inorganic materials 0.000 description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 238000000059 patterning Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- -1 TEOS Chemical compound 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
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- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
以下、本発明の実施の形態1については、図1及び2を参照して説明する。
以下、本発明の実施の形態2については、図3及び4を参照して説明する。
以下、本発明の実施の形態3については、図5を参照して説明する。
以下、本発明の実施の形態4については、図6を参照して説明する。
以下、本発明の実施の形態5については、図7及び8を参照して説明する。
2 第2ノズル
3 基板
4 蒸着物質及びガス噴出口
5 セル
6 抵抗加熱器
7 蒸着ノズル用ガス供給口
8 第2ガス流路
9 第2ガス噴出口
10 第2ガス供給口
11 電極
12 高周波電源
Claims (4)
- 第1の噴出口に反応性ガス及び蒸着物質が供給されつつ前記第1の噴出口の外周に設けられた第2の噴出口から不活性ガスを導入し、前記第1の噴出口の外周に設けられた電極に高周波電力を印加することで、前記第1の噴出口に対向して設けられた基板を処理する処理方法であって、前記蒸着物質は基板上に噴出されるとともにその一部は前記反応性ガスによってアッシング処理されることを特徴とする処理方法。
- 第2の噴出口の外周に、前記第2の噴出口を囲むように第3の噴出口を設け、前記第3の噴出口から前記第2の噴出口から噴出させるガスよりも放電しにくいガスを噴出させることを特徴とする請求項1記載の処理方法。
- 第1の噴出口と、前記第1の噴出口の外周に設けられ、かつ、前記第1の噴出口を囲むように配置された第2の噴出口と、前記第1の噴出口に設けられた電極と、前記第1の噴出口に蒸着材料を供給するセルと、前記セルを加熱する抵抗部と、前記第1の噴出口にガスを供給する第1ガス供給装置と、前記第2の噴出口にガスを供給する第2ガス供給装置と、前記電極に電圧を印加する電源とで構成されることを特徴とする処理装置。
- 第2の噴出口の外周に、前記第2の噴出口を囲むように第3の噴出口を設けたことを特徴とする請求項3記載の処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005347614A JP4816034B2 (ja) | 2005-12-01 | 2005-12-01 | 処理方法及び処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005347614A JP4816034B2 (ja) | 2005-12-01 | 2005-12-01 | 処理方法及び処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007154225A JP2007154225A (ja) | 2007-06-21 |
JP2007154225A5 JP2007154225A5 (ja) | 2008-07-10 |
JP4816034B2 true JP4816034B2 (ja) | 2011-11-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005347614A Expired - Fee Related JP4816034B2 (ja) | 2005-12-01 | 2005-12-01 | 処理方法及び処理装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4816034B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110014653A (ko) * | 2008-05-19 | 2011-02-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전자 소자에서 증기 코팅 장치 및 방법 |
WO2010127328A2 (en) * | 2009-05-01 | 2010-11-04 | Kateeva, Inc. | Method and apparatus for organic vapor printing |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3345079B2 (ja) * | 1993-02-26 | 2002-11-18 | 株式会社半導体エネルギー研究所 | 大気圧放電装置 |
JPH07258828A (ja) * | 1994-03-24 | 1995-10-09 | Matsushita Electric Works Ltd | 膜形成方法 |
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2005
- 2005-12-01 JP JP2005347614A patent/JP4816034B2/ja not_active Expired - Fee Related
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JP2007154225A (ja) | 2007-06-21 |
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