JP4792764B2 - Pyroelectric device manufacturing equipment - Google Patents

Description

The present invention relates to a pyroelectric element production equipment.

Conventionally, this kind of pyroelectric element manufacturing apparatus (polarization processing apparatus), as shown in Patent Document 1, for example, while heating a wafer cut from an ingot obtained by pulling up a crystal such as LiTaO 3, a voltage (for example, 5 V / cm), the polarization process is performed, and after the polarization process, the wafer is cooled by a fan.
JP 2001-168410 A (pages 5 to 11 and FIG. 1)

  However, the pyroelectric element manufacturing apparatus of Patent Document 1 has a problem that cooling efficiency is low and cooling time is long because the wafer is cooled by a fan after performing polarization treatment while heating. On the other hand, it is generally known that the quality of a wafer is deteriorated when the wafer is rapidly cooled.

The present invention has been made in view of the above points, and an object of the present invention is to prevent the wafer from being rapidly cooled when the wafer is cooled after being heated, and to maintain the quality of the wafer. it is to provide a pyroelectric element production equipment capable of controlling the cooling time.

The invention described in claim 1 is a holding means for holding a wafer, a heating means for heating the wafer, a heat transfer means for transferring heat from the heating means to the wafer substantially uniformly, and the heat A temperature measuring means for measuring the temperature of at least one of the transmission means and the wafer; an energizing means for energizing and polarizing the wafer; and a cooling rate for the wafer provided separately from the wafer. Cooling means for cooling , wherein the cooling means has a cooling block having a hollow portion for containing a cooling medium, a communication means for connecting the cooling medium supply source for supplying the cooling medium and the cooling block, and the communication Cooling rate control means for controlling the amount of the cooling medium supplied to the cooling block from the cooling medium supply source via the means, and through the part of the cooling block, Heat means and the heat transfer means is cooled, the cooling block, characterized in that lifting the normal direction of the portion of the outer surface of the cooling block.

In this configuration, when the wafer is heated and then cooled, it can be cooled away from the wafer, so that the wafer can be prevented from being rapidly cooled, the quality of the wafer can be maintained, and the cooling rate can be increased. Since it can be controlled, the cooling time can be controlled. In this configuration, since the amount of the cooling medium supplied to the cooling block can be controlled, the cooling rate can be easily controlled. In this configuration, the wafer cooling can be easily turned on and off.

According to a second aspect of the present invention, in the first aspect of the present invention, the communication means includes a supply pipe for flowing the cooling medium of the cooling medium supply source to the cooling block, and the cooling medium of the cooling block. A double pipe provided concentrically with a discharge pipe that flows to the medium supply source is provided. In this configuration, since the structure of the communication means can be simplified, installation can be easily performed.

The invention according to claim 3 is the invention according to claim 2 , wherein the double pipe is provided with the supply pipe on the outer peripheral side, the discharge pipe is provided on the center side, and the tip of the discharge pipe is It is characterized in that it is located on a part of the cooling block from the tip of the supply pipe. In this configuration, since the hot cooling medium staying on a part of the cooling block can be efficiently discharged, airing or the like can be prevented and safety can be improved.

According to a fourth aspect of the present invention, in the third aspect of the present invention, a part of the inner surface of the cooling block is formed in a conical shape having an inclination toward a portion facing the tip of the double pipe. It is characterized by that. In this configuration, since the cooling medium can be moved toward the center of the double pipe, the hot cooling medium staying on a part of the cooling block can be discharged more efficiently.

According to a fifth aspect of the present invention, in the first aspect of the present invention, the communication means includes a supply pipe that is inserted into a part of the cooling block and causes the cooling medium of the cooling medium supply source to flow to the cooling block. And a discharge pipe that is inserted into the other side facing the part of the cooling block and flows the cooling medium of the cooling block to the cooling medium supply source. In this configuration, since the hot cooling medium staying on a part of the cooling block can be cooled, the cooling efficiency can be improved.

The invention according to claim 6 is the cooling according to any one of claims 2 to 5 , wherein the cooling rate control means is provided in the supply pipe and is supplied from the cooling medium supply source to the cooling block. A valve for opening and closing a medium supply passage, a storage unit for storing a cooling rate characteristic for maintaining a predetermined pyroelectric characteristic, a temperature of the heat transfer unit measured by the temperature measuring unit, and the cooling rate characteristic And a supply amount control unit for controlling the supply amount of the cooling medium by controlling opening and closing of the valve based on the above. In this configuration, the cooling rate can be more accurately controlled based on the cooling rate characteristic stored in the storage unit.

The invention according to claim 7 is the invention according to any one of claims 1 to 6 , further comprising holding means for holding the heating means with elasticity. In this configuration, since the contact between the heating unit and the cooling unit can be improved, the cooling rate can be controlled more accurately and the impact between the cooling unit and the heating unit can be reduced. Thus, the heating means and the cooling means can be protected.

  According to the present invention, when the wafer is heated and then cooled, the wafer can be prevented from being rapidly cooled, the quality of the wafer can be maintained, and the cooling time can be controlled.

(Embodiment 1)
First, the basic configuration of the first embodiment will be described. As shown in FIG. 1, the pyroelectric element manufacturing apparatus according to the first embodiment performs polarization processing on a wafer 1 and includes a heating unit 2, a cooling unit 3, and a control unit 4.

  The wafer 1 is formed by slicing an ingot such as LiTaO 3, and in order to form a plurality of pyroelectric elements, a metal film by, for example, vapor deposition or plating is attached to both surfaces to form electrodes (not shown). Forming.

  The heating unit 2 includes a pair of heat transfer plates (heating plates) 20 and 21, a spacer 22, a heater 23, a thermocouple 24, and a pair of probes 25 and 25. In FIG. 1, the attachment of the pair of probes 25, 25 is omitted.

  The pair of heat transfer plates 20 and 21 is an insulating material such as a ceramic plate made of aluminum nitride, for example, and the inner surfaces 20a and 21a are finished by grinding with a center average roughness of about 0.8, and the parallelism is 0. It is finished to about 0.03mm. The pair of heat transfer plates 20 and 21 have substantially the same linear expansion coefficient as the spacer 22 and the heater 23. For example, when the pair of heat transfer plates 20 and 21 is aluminum nitride, the linear expansion coefficient is adjusted by selecting a grade. As described above, since the pair of heat transfer plates 20 and 21, the spacer 22 and the heater 23 are expanded to the same extent during heating, deformation of the probe 25, the sandwiching jig 26 and the adjusting unit 28 which will be described later can be prevented. The heat transfer plate 20 has through holes 200, 200, 201 and a recess 202 provided in a portion corresponding to the center of the wafer 1. The distance between the bottom 202a of the recess 202 and the inner surface 20a of the heat transfer plate 20 is 0.5 to 1 mm. On the other hand, the heat transfer plate 21 has a through hole 210 and recesses 211 and 211.

  The pair of heat transfer plates 20 and 21 are clamping means for clamping and holding the wafer 1 with the inner surfaces 20a and 21a using a clamping jig 26. The sandwiching jig 26 includes a jig bar 260 and a collar 261. The method for holding the wafer 1 will be described in detail. In the pair of heat transfer plates 20 and 21, the collars 261 and 261 are inserted into jig bars 260 and 260 screwed into the through holes 200 and 200 of the heat transfer plate 20, For example, pressure is applied to each collar 261 by a pinching pressure adjusting tool (not shown) such as a cylinder to adjust the pinching pressure of the wafer 1. As described above, the pair of heat transfer plates 20 and 21 can electrically insulate the wafer 1 from the outside and can be sandwiched with an appropriate sandwiching pressure corresponding to the material of the wafer 1. The contact property can be improved and the wafer 1 can be protected.

  The pair of heat transfer plates 20 and 21 are heat transfer means for transferring heat from the heater 23 to the wafer 1 substantially uniformly together with the spacer 22. Since the pair of heat transfer plates 20 and 21 have good contact properties with the wafer 1, heat transfer properties are improved.

  The spacer 22 has a good thermal conductivity such as aluminum and is formed in a plate shape with an inexpensive metal, and uniformly transfers the heat from the heater 23 to the heat transfer plate 21.

  The heater 23 covers the periphery of stainless steel with aluminum, generates heat when energized with a power source (not shown), and heats the wafer 1 via the spacer 22 and the pair of heat transfer plates 20 and 21. Heating means. The heating temperature is, for example, 200 ° C. The heater 23 includes a pair of springs 27 and 27. The pair of springs 27 and 27 are holding means for holding the heater 23 with elasticity.

  The thermocouple 24 is, for example, a K type, is inserted into the concave portion 202 of the heat transfer plate 20, and measures the temperature of the heat transfer plate 20 at a point 0.5 to 1 mm away from the wafer 1 as the temperature of the wafer 1. It is a measuring means. The thermocouple 24 is connected to the control unit 4 and outputs a measurement result to the control unit 4. The thermocouple 24 is not limited to measuring the temperature of the heat transfer plate 20 in the vicinity of the wafer 4, and may directly measure the temperature of the wafer 1.

  As shown in FIG. 2, the pair of probes 25 and 25 are energization means for energizing the wafer 1 and applying polarization when a voltage is applied. Specifically, each probe 25 is covered with a cover portion 250, and one end of each probe 25 is inserted into the through hole 201 (210) of the pair of heat transfer plates 20 (21) and formed on the surface of the wafer 1 ( The other end is connected to the control unit 4. The lower probe 25 is fixed to the spacer 22 by the adjusting unit 28, and the upward allowance is adjusted. On the other hand, in the cover portion 250, the upper probe 25 is fixed to the fixed plate 29 by the adjusting portion 28, and the downward allowance is adjusted. The cover part 250 is formed in a cylindrical shape, and integrally includes a cylindrical part 250a and a ridge part 250b protruding from one end of the cylindrical part 250a. The cylindrical part 250a is provided with a thread groove 250c at the other end. In the first embodiment, since the pair of heat transfer plates 20 and 21 are made of an insulating material, a long insulation distance can be secured. Thereby, a high voltage can be applied to each probe 25, and for example, only an electrode portion (not shown) formed on the wafer 1 can be selectively polarized.

  The adjustment unit 28 includes a coil spring 280, a probe stopper 281, a nut 282, and a spacer 283. The probe stopper 281 is formed in a cylindrical shape by an insulating material such as an aluminum nitride ceramic plate similar to the pair of heat transfer plates 20 and 21, for example, a cylindrical portion 281a and one end portion of the cylindrical portion 281a. And a probe 25 inserted therein. The cylindrical portion 281a has a thread groove 281c on the outer peripheral wall that is screwed into the through hole 220 of the spacer 22 (the through hole 290 of the fixing plate 29). The nut 282 is provided at the other end of the probe stopper 281 and is screwed into the thread groove 280 c of the support shaft 280. The spacer 283 is formed in an annular shape. When the probe stopper 281 is attached to the spacer 22 (fixed plate 29), the spacer 283 is interposed between the protrusion 281b of the probe 281 and the spacer 22 (fixed plate 29). Provided. The amount of protrusion of the probe 25 can be adjusted by the number and thickness of the spacers 283 and the coil spring 280.

  Next, attachment of the probe 25 by the adjusting unit 28 will be described. First, the probe 25 is inserted into the probe stopper 281 and fixed with the nut 282. Next, the number and thickness of the spacers 283 sandwiched between the probe stopper 281 and the spacer 22 (fixing plate 29) are adjusted, and the probe stopper 281 is screwed and attached to the through hole 220 (through hole 290). As described above, the probe 25 can be attached without protruding from the lower surface 231 of the heater 23 to the outside. Further, the protrusion of the probe 25 can be adjusted and attached, and the contact pressure to the wafer 1 by the probe 25 is changed.

  By adjusting the contact pressure to the wafer 1 as described above, the deformation amount and the electrical contact state of the wafer 1 can be adjusted. The mounting of the probe 25 is not limited to the above, and various design changes can be made.

  As shown in FIG. 1, the cooling unit 3 includes a cooling block 30, a double pipe 31, and a valve 32, and is provided separately from the wafer 1. As will be described later, the wafer 1 The cooling means controls the cooling rate to cool the wafer 1 from the upper part 300 of the cooling block 30 through the heater 23, the spacer 22, and the pair of heat transfer plates 20, 21.

  The cooling block 30 is formed with a hollow portion 33 of a metal having high thermal conductivity such as copper, for example, and stores the cooling medium supplied from the cooling medium supply source 5. The cooling medium is, for example, tap water. The upper part 300 of the cooling block 30 has an inner surface 301 formed in a conical shape (conical shape) with an inclination toward a portion facing a tip 313 of a discharge pipe 311 described later.

  The cooling block 30 moves up and down in the normal direction (vertical direction in FIG. 1) of the outer surface 302 of the upper part 300. When the cooling block 30 rises, the outer surface 302 contacts the lower surface 231 of the heater 23, and the heater 23, the spacer 22 and the pair of The wafer 1 is cooled via the heat transfer plates 20 and 21. Thereby, the rapid cooling of the wafer 1 can be prevented by cooling the part away from the wafer 1.

  Further, since the heating unit 2 is held by the pair of springs 27, 27, when the cooling block 30 is raised, the contact between the heater 23 and the cooling block 30 can be improved and the impact can be reduced. be able to. Thereby, while being able to control a cooling rate more correctly, the heater 23 and the cooling block 30 can be protected.

  The double pipe 31 includes a supply pipe 310 provided on the outer peripheral side and a discharge pipe 311 provided on the center side in a concentric shape, and one end thereof is inserted into the cooling block 30. The other end of the double pipe 31 is inserted into the cooling medium supply source 5 while separating the supply pipe 310 and the discharge pipe 311. The cooling medium supply source 5 supplies the cooling medium to the cooling block 30. The supply pipe 310 has a tip 312 positioned on the lower portion 303 side of the cooling block 30, and allows the cooling medium of the cooling medium supply source 5 to flow through the cooling block 30. The discharge pipe 311 has a tip 313 positioned closer to the upper portion 300 of the cooling block 30 than the tip 312 of the supply pipe 310, and allows the cooling medium of the cooling block 30 to flow to the cooling medium supply source 5. The supply pipe 310 and the discharge pipe 311 are communication means for communicating the cooling block 30 and the cooling medium supply source 5. As a result, the hot cooling medium staying on the conical (mortar-shaped) inner surface 301 can be smoothly discharged from the discharge pipe 311 provided on the center side, so that it is possible to prevent idling. Further, it is possible to prevent the heater 23 and the cooling block 30 from being burned by overheating.

  The valve 32 is provided in the supply pipe 310 and opens and closes a supply path for a cooling medium supplied from the cooling medium supply source 5 to the cooling block 30.

  The control unit 4 is, for example, a personal computer (PC), a commercially available temperature controller (with a programming function), and the like, and includes a control unit 40, a storage unit 41, and a supply amount control unit 42. The control unit 40 controls heating of the heater 23, application of voltage to the pair of probes 25, 25, and elevation of the cooling block 30. The storage unit 41 stores a cooling rate characteristic for maintaining a predetermined pyroelectric characteristic. Specifically, the storage unit 41 stores a setting value (for example, 8 ° C./min) for switching between opening and closing of the valve 32 in the temperature gradient or a cooling curve, or when the valve 32 is a variable valve, The adjustment amount is memorized.

  The supply amount control unit 42 controls the opening and closing of the valve 32 based on the temperature of the heat transfer plate 20 measured by the thermocouple 24 and the cooling rate characteristic stored in the storage unit 41, thereby supplying the supply pipe 310. The amount of the cooling medium supplied to the cooling block 30 from the cooling medium supply source 5 is controlled via the. That is, the supply amount control unit 42 is a cooling rate control unit that controls the amount of the cooling medium together with the valve 32 and the storage unit 41. Specifically, the supply amount control unit 42 calculates a temperature gradient as the cooling rate, and closes the valve 32 when exceeding a set value stored in the storage unit 41, and opens the valve 32 when less than the set value. . For example, when the temperature is lower than 8 ° C./min, the valve 32 is closed to suppress cooling. On the other hand, when the temperature falls without exceeding 8 ° C./min, the valve 32 is opened to perform cooling. Further, the opening / closing of the valve 32 can be controlled along the cooling curve stored in the storage unit 41. The cooling rate is adjusted by opening and closing the valve 32 as described above.

  Next, a method for heating the wafer 1 in the pyroelectric element manufacturing apparatus according to the first embodiment will be described. First, the wafer 1 is sandwiched and held between the heat transfer plates 20 and 21 using the sandwiching jigs 26 and 26. Next, the pair of probes 25 and 25 urged by the adjustment units 28 and 28 (see FIG. 2) are brought into contact with electrode portions (not shown) on both surfaces of the wafer 1. Subsequently, the power source (not shown) and the heater 23 are energized to heat the wafer 1 at, for example, about 200 ° C. via the spacer 22 and the pair of heat transfer plates 20 and 21. At the same time, a voltage is applied to the pair of probes 25 and 25 to perform polarization processing in a vacuum.

  As described above, even if the wafer 1 is thin, it can be held by the pair of heat transfer plates 20 and 21 without being deformed, and the pair of probes 25 and 25 are stably brought into contact with the wafer 1 for polarization treatment. It can be performed. Further, since the wafer 1 can be uniformly heated from above and below by the pair of heat transfer plates 20 and 21, cracking can be prevented even if the wafer 1 is thin, and there is a temperature difference in the wafer 1. It does not occur and uniform polarization processing can be performed.

  Next, a method for cooling the wafer 1 in the pyroelectric element manufacturing apparatus according to the first embodiment will be described. When the wafer 1 is cooled after being polarized while being heated, first, the heater 23 is turned on in order to prevent the wafer 1 from being suddenly cooled and suddenly cooled. In this state, the cooling block 30 to which no cooling medium is supplied is raised to bring the upper surface 300 into contact with the lower surface 231 of the heater 23. After several tens of seconds, the heater 23 is turned off, and the cooling medium is supplied from the cooling medium supply source 5 through the supply pipe 310 and the valve 32 to the hollow portion 33 of the cooling block 30, and the heater 23, the spacer 22, and a pair of heat transfers. The wafer 1 is cooled via the plates 20 and 21. When the supply rate control unit 42 calculates a temperature gradient as a cooling rate from the temperature measured by the thermocouple 24 and exceeds a set value (for example, 8 ° C./min) stored in the storage unit 41, the valve 32 Is closed, and if it is less than the set value, the valve 32 is opened. Finally, when the temperature falls to a predetermined temperature (for example, about 100 ° C.), air or nitrogen is supplied and natural cooling is performed.

  As described above, according to the first embodiment, when the wafer 1 is cooled after being heated, the wafer 1 can be cooled away from the wafer 1, so that the wafer 1 is prevented from being rapidly cooled and the quality of the wafer 1 is maintained. The amount of the cooling medium can be controlled based on the cooling rate characteristic stored in the storage unit 41, and the cooling rate can be controlled, so that the cooling time can be accurately controlled. Can do.

  Further, in the upper part 300 of the cooling block 30, the cooling medium can be moved toward the tip 313 of the discharge pipe 311 by the inner surface 301 formed in a conical shape (conical shape). Since the hot cooling medium staying in the chamber can be efficiently discharged, it is possible to prevent air-burning and the like, and to prevent the heater 23 and the cooling block 30 from being burned by overheating, thereby improving safety. .

  Furthermore, since the structure of the supply pipe 310 and the discharge pipe 311 can be simplified by the double pipe 31, the installation can be easily performed. Since the cooling block 30 can be raised and lowered, the cooling of the wafer 1 can be easily turned on and off. When the cooling block 30 is raised, the contact between the heater 23 and the cooling block 30 can be improved by the pair of springs 27, 27, so that the cooling rate can be controlled more accurately and the heater Since the impact between the cooling block 30 and the cooling block 30 can be reduced, the heater 23 and the cooling block 30 can be protected.

  As a modification of the first embodiment, the valve may be a variable valve that changes the flow rate of the cooling medium. With this configuration, the amount of the cooling medium flowing through the supply pipe can be easily increased or decreased, so that the cooling rate can be controlled.

(Embodiment 2)
The pyroelectric element manufacturing apparatus according to the second embodiment is obtained by connecting A1 and A2 in FIG. 3 to A1 and A2 in FIG. 1, respectively. Similarly to the pyroelectric element manufacturing apparatus according to the first embodiment (see FIG. 1), Although the heating unit 2 and the control unit 4 are provided to perform polarization processing on the wafer 1, there are the following characteristic portions that are not included in the pyroelectric element manufacturing apparatus of the first embodiment.

  As shown in FIG. 3, the cooling unit 3a of the second embodiment includes a cooling block 30a and a double pipe 31a different from the cooling unit 3 of the first embodiment (see FIG. 1). The cooling unit 3a of the second embodiment is the same as the cooling unit 3 of the first embodiment except for the points described above.

  The cooling block 30a is formed with a hollow portion 33a and moves up and down in the normal direction of the outer surface 302a of the upper portion 300a (the vertical direction in FIG. 3). The cooling block 30a is the same as the cooling block 30 of the first embodiment (see FIG. 1) except for the points described above.

  The double pipe 31a includes a supply pipe 310a and a discharge pipe 311a. The supply pipe 310a is inserted from the side into the upper part 300a side (the upper side in FIG. 3) of the cooling block 30a. On the other hand, the discharge pipe 311a is inserted in the lower part 303a side (lower side in FIG. 3) facing the upper part 300a of the cooling block 30a. The double pipe 31a, the supply pipe 310a, and the discharge pipe 311a are the same as the double pipe 31, the supply pipe 310, and the discharge pipe 311 (see FIG. 1) of the first embodiment except for the points described above.

  As described above, according to the second embodiment, the same effects as those of the first embodiment can be obtained, and the hot cooling medium staying on the upper portion 300a side of the cooling block 30 can be cooled with a simple structure. , Cooling efficiency can be improved. Moreover, since a cooling medium can be flowed from the upper part of the hollow part 33a to the lower part in the cooling block 30, the hot cooling medium can be discharged | emitted smoothly.

(Embodiment 3)
In the pyroelectric element manufacturing apparatus of the third embodiment, the heating unit 2a includes a heat transfer plate 20, a spacer 22, a heater 23 (see FIG. 1), and a thermocouple 24 (see FIG. 4). 1) and a pair of probes 25, 25 are provided in the same manner as the heating unit 2 (see FIG. 1) of the first embodiment, but are not included in the heating unit 2 of the first embodiment. There is.

  The heat transfer plate 21 according to the third embodiment has long holes 212 and 212. Further, each sandwiching jig 26a of the third embodiment includes a jig bar 260a, a collar 261a, a coil spring 262, and a nut 263. The jig bar 260 a is provided with an oval large-diameter portion 264 at the lower end, and is inserted through the through hole 200 and the long hole 212. The heat transfer plate 21 and each sandwiching jig 26a of the second embodiment are the same as the heat transfer plate 21 and each sandwiching jig 26 (see FIG. 1) of the first embodiment except for the points described above.

  Next, a method for holding the wafer 1 in the pyroelectric element manufacturing apparatus according to the third embodiment will be described. First, the jig bars 260a and 260a having the large-diameter portion 264 shown in FIG. 4B are screwed into the long holes 212 and 212 of the heat transfer plate 21, and the collar 261a and the coil spring 262 are inserted into the jig bars 260a. To do. Subsequently, the jig bar 260a is rotated to prevent the large-diameter portion 264 from being removed as shown in FIG. Finally, the nut 263 screwed into each jig bar 260a is moved up and down, and the compression amount of the coil spring 262 is changed to adjust the clamping pressure of the wafer 1.

  As described above, according to the third embodiment, the same effects as those of the first embodiment can be obtained, and the pinching pressure of the wafer 1 can be easily adjusted by the spring force of the coil spring 262, and each pinching jig 26a can be adjusted. Can be integrated in a compact manner with respect to the pair of heat transfer plates 20 and 21. Moreover, since the pinching operation of the pair of heat transfer plates 20 and 21 can be performed with one touch, the operability can be improved.

(Embodiment 4)
The pyroelectric element manufacturing apparatus according to the fourth embodiment includes the cooling unit 3 as in the pyroelectric element manufacturing apparatus (see FIG. 1) according to the first embodiment, but is not included in the pyroelectric element manufacturing apparatus according to the first embodiment. There are the following features.

  The heating unit 2b of the fourth embodiment includes a plurality of probes 25a on the upper surface side of the wafer 1 and a plurality of probes 25b on the lower surface side of the wafer 1, as shown in FIG. ing. Each of the probes 25a and 25b is a voltage application probe and an electrical resistance measurement probe. In addition, the heating unit 2b of Embodiment 4 is the same as that of the heating unit 2 (refer FIG. 1) of Embodiment 1 in points other than the above.

  As shown in FIG. 5B, the control unit 4 a according to the fourth embodiment includes a high voltage source 43, a resistance measuring device 44, and a switching control device 45. The high voltage source 43 is a DC power source. The switching control device 45 switches, for each of the probes 25a and 25b, a state used as an electrical resistance measurement probe and a state used as a voltage application probe. The control unit 4a of the fourth embodiment is the same as the control unit 4 (see FIG. 1) of the first embodiment except for the points described above.

  Next, a method for measuring the electrical resistance between both surfaces of the wafer 1 in the pyroelectric element manufacturing apparatus according to the fourth embodiment will be described. First, the switching control device 45 is switched to the connection with the resistance measuring device 44. Subsequently, one selected probe 25a of the plurality of probes 25a is electrically connected to the probe 25b paired with the selected probe 25a, and the resistance between the connected probes 25a and 25b. Measure the value.

  Next, a method for measuring electrical resistance between two different locations on the wafer 1 will be described. First, the switching control device 45 is switched to the connection with the resistance measuring device 44. Subsequently, the probe 25a (25b) and one probe 25a (25b) selected from the other probes 25a (25b)... Are connected, and between the connected probes 25a and 25a (25b, 25b). Measure the resistance value.

  As described above, according to the fourth embodiment, the same effect as in the first embodiment can be obtained, and by measuring the resistance of the wafer 1 between the probes 25a and 25b, for example, the wafer 1 is cracked, and this location When the electrode material wraps around, it can be confirmed whether or not the circuit is short-circuited. Further, by measuring the resistance of the wafer 1 between the probes 25a and 25a (25b and 25b), for example, a crack as shown in FIG. 5A (the portion “B” in FIG. 5A) is formed. 1, the resistance value between the probes 25 a and 25 a becomes infinite, so that it is possible to determine abnormality of an electrode part (not shown) in a specific area.

It is sectional drawing of the pyroelectric element manufacturing apparatus of Embodiment 1 by this invention. It is sectional drawing of the heat transfer board in the pyroelectric element manufacturing apparatus same as the above. It is sectional drawing of the cooling unit in the pyroelectric element manufacturing apparatus of Embodiment 2 by this invention. It is sectional drawing of the heat-transfer board in the pyroelectric element manufacturing apparatus of Embodiment 3 by this invention. It is sectional drawing of the probe in the pyroelectric element manufacturing apparatus of Embodiment 4 by this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafers 20 and 21 Heat transfer board 22 Spacer 23 Heater 24 Thermocouple 30 Cooling block 310 Supply pipe 32 Valve 42 Supply amount control part 5 Cooling medium supply source

Claims (7)

Clamping means for clamping the wafer;
Heating means for heating the wafer;
Heat transfer means for transferring heat from the heating means substantially uniformly to the wafer;
Temperature measuring means for measuring the temperature of at least one of the heat transfer means and the wafer;
Energization means for energizing and polarizing the wafer;
Cooling means provided separately from the wafer and cooling the wafer by controlling a cooling rate ;
The cooling means is
A cooling block having a hollow portion for storing the cooling medium;
Communication means for communicating the cooling medium supply source for supplying the cooling medium and the cooling block;
Cooling rate control means for controlling the amount of cooling medium supplied from the cooling medium supply source to the cooling block via the communication means;
Cooling the heating means and the heat transfer means through a part of the cooling block;
The pyroelectric element manufacturing apparatus , wherein the cooling block moves up and down in a normal direction of a part of the outer surface of the cooling block . The communication means includes a double pipe provided concentrically with a supply pipe for flowing the cooling medium of the cooling medium supply source to the cooling block and a discharge pipe for flowing the cooling medium of the cooling block to the cooling medium supply source. The pyroelectric element manufacturing apparatus according to claim 1. The double pipe, the supply pipe is provided on the outer peripheral side, the discharge pipe is provided on the center side,
The pyroelectric element manufacturing apparatus according to claim 2 , wherein a tip of the discharge pipe is located on a part of the cooling block from a tip of the supply pipe . The pyroelectric element manufacturing apparatus according to claim 3 , wherein an inner surface of a part of the cooling block is formed in a conical shape having an inclination toward a portion facing the tip of the double pipe . The communication means is
A supply pipe that is inserted into a part of the cooling block and flows the cooling medium of the cooling medium supply source to the cooling block;
A discharge pipe that is inserted into the other side opposite to a part of the cooling block and flows the cooling medium of the cooling block to the cooling medium supply source;
Pyroelectric element manufacturing apparatus according to claim 1, characterized in that it comprises a. The cooling rate control means comprises:
A valve provided in the supply pipe for opening and closing a supply passage of a cooling medium supplied from the cooling medium supply source to the cooling block;
A storage unit for storing a cooling rate characteristic for maintaining a predetermined pyroelectric characteristic;
A supply amount control unit for controlling the supply amount of the cooling medium by controlling opening and closing of the valve based on the temperature of the heat transfer means measured by the temperature measurement means and the cooling rate characteristic;
Pyroelectric element manufacturing apparatus according to any one of claims 2-5, characterized in that it comprises a. The pyroelectric element manufacturing apparatus according to claim 1, further comprising holding means that has elasticity and holds the heating means .

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