JP4785483B2 - LIGHT EMITTING ELEMENT AND DISPLAY DEVICE - Google Patents

Description

  The present invention relates to a light emitting element having a configuration in which a plurality of layers are sandwiched between a pair of electrodes. Further, the present invention relates to a display device using the light-emitting element.

  In recent years, an apparatus using light emission from an electroluminescence element (light emitting element) has attracted attention as an apparatus for display or illumination. As a light-emitting element used in these devices, one having a structure in which a layer containing a light-emitting compound is sandwiched between a pair of electrodes is well known.

  In such a light-emitting element, holes injected from one electrode side and electrons injected from the other electrode side recombine to form an excited state molecule, which returns to the ground state. Emit light.

  By the way, in display devices to be incorporated into various information processing devices that have been rapidly developed in recent years, there is a particularly high demand for low power consumption, and in order to achieve this, attempts have been made to reduce the driving voltage of light emitting elements. Yes. In view of commercialization, it is important not only to lower the driving voltage but also to extend the life of the light emitting element, and the development of light emitting elements to achieve this is underway.

  For example, Patent Document 1 aims to realize a low driving voltage and a long lifetime of a light-emitting element by using a metal oxide having a high work function such as molybdenum oxide for an anode.

However, the means disclosed in Patent Document 1 cannot be said to have sufficient element reliability, and has not yet reached a practical level. Therefore, it has been necessary to develop a technology for achieving the reliability of the element and further extending the lifetime.
JP-A-9-63771

  An object of the present invention is to provide a highly reliable light-emitting element that has a low driving voltage and can have a longer lifetime than a conventional light-emitting element, and a display device using the light-emitting element.

  The light-emitting element of the present invention includes a plurality of layers sandwiched between a pair of electrodes provided so as to face each other, and at least one of the plurality of layers includes a layer containing a light-emitting substance. A layer including an oxide semiconductor or metal oxide and a substance with a higher hole-transport property than electrons, and an oxide semiconductor or metal oxide and a substance with a higher electron-transport property than holes. And a layer containing it.

  Note that the plurality of layers in the above structure are configured by combining layers made of a substance having a high carrier-injecting property or a substance having a high carrier-transporting property so that a light-emitting region is formed at a distance from the electrode. It is.

  As another structure of the light-emitting element of the present invention, a first layer, a second layer, and a first layer that are sequentially stacked between a first electrode and a second electrode that are provided to face each other, The first layer includes an oxide semiconductor or metal oxide and a substance having a higher hole-transport property than electrons, the second layer includes a light-emitting substance, and the third layer This layer is characterized by containing an oxide semiconductor or metal oxide and a substance having a higher electron-transport property than holes.

  As another structure of the light-emitting element of the present invention, a first layer, a second layer, and a first layer that are sequentially stacked between a first electrode and a second electrode that are provided to face each other, 3 and a fourth layer, the first layer includes an oxide semiconductor or a metal oxide and a substance having a property of transporting more holes than electrons, and the second layer emits light The third layer includes an oxide semiconductor or metal oxide and a substance having a higher electron transporting property than holes, and the fourth layer includes an oxide semiconductor or metal oxide and holes. Further, it includes a substance having a high electron transporting property and a substance capable of donating electrons to a substance having a higher electron transporting property than the holes.

  As another structure of the light-emitting element of the present invention, a first layer, a second layer, and a first layer that are sequentially stacked between a first electrode and a second electrode that are provided to face each other, 3 and a fourth layer, the first layer includes an oxide semiconductor or a metal oxide and a substance having a property of transporting more holes than electrons, and the second layer emits light The third layer includes a substance and can donate an electron to an oxide semiconductor or metal oxide, a substance having a higher electron-transport property than holes, and a substance having a higher electron-transport property than holes. The fourth layer includes an oxide semiconductor or metal oxide and a substance having a higher hole-transport property than electrons.

  As another structure of the light-emitting element of the present invention, an oxide semiconductor or a metal oxide and a substance having a higher hole-transport property than an electron are provided so as to be in contact with the second electrode in the structure of the light-emitting element. It is characterized in that a new layer is provided. Note that the newly provided layer may be formed using the same material as the first layer.

  By forming a layer by mixing an organic substance and a substance containing a substance having a higher hole-transport property than electrons or a substance having a higher electron-transport property than holes, the layer of the light-emitting element is formed by a synergistic effect. Thus, a light-emitting element with a small increase in resistance due to the increase in thickness can be obtained. As a result, it is possible to increase the distance between the electrodes by forming the film thickness of the light emitting element sandwiched between the pair of electrodes without increasing the driving voltage, thereby preventing a short circuit between the electrodes, The reliability of the light emitting element can be improved.

  In addition, by applying the light-emitting element obtained by the present invention to a display device, a defect due to a short circuit between electrodes can be prevented, and a display device with excellent reliability that can withstand long-time use can be obtained.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are used in common in different drawings.

(Embodiment 1)
In this embodiment, one embodiment of a light-emitting element is described below with reference to FIGS.

  In this embodiment, the light-emitting element 110 is provided over a substrate 101 for supporting the light-emitting element 110, and includes a first electrode 102 and a first layer 103 sequentially stacked over the first electrode 102, A second layer 104, a third layer 105, and a second electrode 106 provided on the second layer 104 and the third layer 105 are formed (FIG. 1).

  As the substrate 101, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, or the like can be used. Alternatively, a substrate made of a flexible synthetic resin such as plastic may be used. Note that the surface of the substrate 101 may be planarized in advance by polishing such as a CMP method.

  The first electrode 102 is preferably formed of a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function (preferably a work function of 4.0 eV or more). Specifically, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), indium tin oxide containing silicon, zinc oxide added with gallium (GZO), etc. A light-transmitting oxide conductive material can be used. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), A single layer composed of a kind of element selected from palladium (Pd), aluminum (Al), manganese (Mn), titanium (Ti), etc., an alloy containing a plurality of the elements, or a layer containing the elements and carbon (C) Alternatively, a stacked structure can be used. Examples of the alloy containing a plurality of the elements include an alloy containing Al, Ti and C, an alloy containing Al and Ni, an alloy containing Al and C, an alloy containing Al, Ni and C, or Al and Mo. An alloy or the like can be used. When Al is used as an electrode, there is an advantage that the reflectance is improved when light emitted from the light emitting layer is to be reflected.

The first layer 103 is formed using a layer containing an oxide semiconductor or metal oxide and a substance having a high hole-transport property. Specific examples of the oxide semiconductor or metal oxide include molybdenum oxide (MoOx), vanadium oxide (VOx), ruthenium oxide (RuOx), tungsten oxide (WOx), cobalt oxide (CoOx), and nickel oxide. Examples thereof include NiOx and copper oxide (CuOx). In addition, indium tin oxide (ITO), zinc oxide (ZnO), or the like can be used. As a substance having a high hole-transport property, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: α-NPD), 4,4′-bis [N— (3-methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′ , 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA) and 4,4′-bis (N- (4- (N, N-di-m -Tolylamino) phenyl) -N-phenylamino) biphenyl (abbreviation: DNTPD) and other aromatic amine-based compounds (that is, having a benzene ring-nitrogen bond), phthalocyanine (abbreviation: H ₂ Pc), copper phthalocyanine ( Abbreviation: Cu c), vanadyl phthalocyanine (abbreviation: VOPc) phthalocyanine compound or the like can be used. The substances mentioned here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any substance that has a property of transporting more holes than electrons may be used.

  The first layer 103 having the above structure is a layer having a high hole injection property. In the first layer 103, aggregation of the oxide semiconductor or the metal oxide is suppressed by a substance having a high hole-transport property included in the layer. That is, crystallization of the first layer 103 is suppressed. Note that the first layer 103 is not limited to a single layer as described above. For example, two or more layers including a semiconductor and a compound having a high hole transporting property and having a different mixing ratio may have a stacked structure. . Note that with such a structure, crystallization of a layer containing an oxide semiconductor or metal oxide and a substance having a property of transporting more holes than electrons can be suppressed; thus, the layer is formed thick. Even in this case, a layer with little increase in resistance can be formed.

  In addition to the oxide semiconductor or metal oxide and the compound having a high hole-transporting property, the first layer 103 has a larger steric hindrance (having a structure having a spatial extension unlike a planar structure). You may have a compound. As the compound having a large steric hindrance, 5,6,11,12-tetraphenyltetracene (abbreviation: rubrene) is preferable. However, besides this, hexaphenylbenzene, t-butylperylene, 9,10-di (phenyl) anthracene, coumarin 545T, and the like can also be used. In addition, dendrimers and the like are also effective.

The second layer 104 is formed using a layer containing a substance having a high light-emitting property. The second layer 104 containing a light emitting material is roughly classified into two types. One is a layer containing a light emitting material as a light emission center dispersed in a layer made of a material having an energy gap larger than that of the light emitting substance, and the other is a layer that constitutes the light emitting layer with only the light emitting material. However, when the former is used, concentration quenching hardly occurs and this is a preferable configuration. As a light-emitting substance serving as a luminescent center, 4-dicyanomethylene-2-methyl-6- [2- (1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCJT), 4-dicyanomethylene-2-t-butyl-6- [2- (1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -4H-pyran, periflanthene, 2,5- Dicyano-1,4-bis [2- (10-methoxy-1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] benzene, N, N′-dimethylquinacridone (abbreviation: DMQd), coumarin 6, coumarin 545T, tris (8-quinolinolato) aluminum (abbreviation: Alq _3), 9,9'-bianthryl, 9,10-diphenyl anthracene (abbreviation: DPA) and 9,10-bi (2-naphthyl) anthracene (abbreviation: DNA), 2,5,8,11-tetra -t- butyl perylene (abbreviation: TBP), and the like. As a base material for forming a layer in which the light emitting material is dispersed, an anthracene such as 9,10-di (2-naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA) is used. Derivatives, carbazole derivatives such as 4,4′-bis (N-carbazolyl) biphenyl (abbreviation: CBP), tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum ( Abbreviations: Almq ₃ ), bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), Bis [2- (2-hydroxyphenyl) pyridinato] zinc (abbreviation: Znpp ₂ ), bis [2- (2-hydro A metal complex such as xylphenyl) benzoxazolate] zinc (abbreviation: ZnBOX) can be used. As a material that can form the second layer 104 using only a light-emitting substance, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA) ), Bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), and the like.

The second layer 104 may be a single layer or a plurality of layers. Holes are formed between the first layer 103 and the layer in which the light-emitting material is dispersed in the second layer 104. A transport layer may be provided, and an electron transport layer may be provided between the third layer 105 and the layer in which the light-emitting material is dispersed in the second layer 104. One of these layers may be provided, or both of them may be provided, or neither of them may be provided. As a material for the hole transport layer, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: α-NPD) or 4,4′-bis [N- (3- Methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ′ '-Tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA) or 4,4'-bis (N- (4- (N, N-di-m-tolylamino) An aromatic amine-based compound such as phenyl) -N-phenylamino) biphenyl (abbreviation: DNTPD) (ie, having a benzene ring-nitrogen bond), phthalocyanine (abbreviation: H ₂ Pc), copper phthalocyanine (abbreviation: CuPc) ) Jill phthalocyanine (abbreviation: VOPc), and can be used phthalocyanine compound such. As a material for the electron transport layer, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h ] -Quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc., a material comprising a metal complex having a quinoline skeleton or a benzoquinoline skeleton Can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ) and other materials such as metal complexes having an oxazole-based or thiazole-based ligand can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, Compounds such as 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used.

  The third layer 105 can be formed using a layer including an oxide semiconductor or a metal oxide and a substance having a high electron-transport property. In this case, as the oxide semiconductor or metal oxide, for example, lithium oxide (LiOx), sodium oxide (NaOx), or the like can be used.

  The third layer 105 is not limited to the above structure, and an oxide semiconductor or a metal oxide, a substance having a high electron-transport property, and an electron that can donate electrons to the electron-transport substance You may form with the layer containing a donating substance. In this case, as the oxide semiconductor or metal oxide, molybdenum oxide (MoOx), vanadium oxide (VOx), ruthenium oxide (RuOx), tungsten oxide (WOx), cobalt oxide (CoOx), nickel oxide A material (NiOx), a copper oxide (CuOx), and the like. In addition, indium tin oxide (ITO), zinc oxide (ZnO), lithium oxide (LiOx), sodium oxide (NaOx), or the like can be used.

In the above structure, the substance having a high electron-transport property includes tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10 -Hydroxybenzo [h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc., metals having a quinoline skeleton or a benzoquinoline skeleton A material made of a complex or the like can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ) and other materials such as metal complexes having an oxazole-based or thiazole-based ligand can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that any substance other than the above substances can be used for the third layer 105 as long as the substance has a property of transporting more electrons than holes. Further, as an electron-donating substance that can donate electrons to an electron-transporting substance, alkali metals such as lithium (Li) and cesium (Cs), magnesium (Mg), calcium (Ca), and strontium (Sr) Alkaline earth metals such as erbium and ytterbium, or compounds such as oxides and halides thereof can be used. Further, the third layer 105 is not limited to a single layer, and two or more layers including any of the above substances may be stacked. In addition to the above structure, an oxide semiconductor or a metal oxide, a substance having a high hole-transport property, and an electron-donating substance that can donate electrons to the hole-transport substance (electron injection) A layer including a substance having a function of promoting) may be used for the third layer 105.

  Note that with such a structure, crystallization of the third layer 105 can be suppressed, so that a layer with little increase in resistance can be formed even when the layer is formed thick.

The second electrode 106 is preferably formed using a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (work function of 3.8 eV or less). Specific examples of such cathode materials include elements belonging to Group 1 or Group 2 of the element periodicity, that is, alkali metals such as Li and Cs, alkaline earth metals such as Mg, Ca, and Sr, and these. In addition to alloys (Mg: Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ ), transition metals including rare earth metals can be used. In addition, it can be formed by stacking any of these materials and any of the materials shown for the first electrode 102, or can be formed using any of the materials shown for the first electrode 102. You can also

  As a method for forming the first layer 103, the second layer 104, and the third layer 105, an evaporation method, an electron beam evaporation method, a sputtering method, or the like can be used. Further, in these layers, a layer containing a plurality of materials can be formed by simultaneously forming each material, and a co-evaporation method by resistance heating evaporation, a co-evaporation method by electron beam evaporation, a resistance It can be formed by combining the same kind and different kinds of methods such as co-evaporation method by heating evaporation and electron beam evaporation, film formation by resistance heating evaporation and sputtering, and film formation by electron beam evaporation and sputtering. In addition, when a layer containing three or more kinds of materials is formed, it can be similarly combined.

  As another forming method, spin coating, a droplet discharge method, or the like may be used, or the above method may be combined with these methods. Note that the droplet discharge method is a method in which droplets (also referred to as dots) of a composition containing a material such as a conductive film or an insulating film are selectively discharged (jetted) to be formed at an arbitrary place. Depending on the method, it is also called an inkjet method. You may form using the different film-forming method for every electrode or each layer.

  In the light-emitting element having the above structure, current flows due to a potential difference generated between the first electrode 102 and the second electrode 106, and the second layer 104 which is a layer containing a highly light-emitting substance is used in the second layer 104. Holes and electrons combine to emit light. That is, a light emitting region is formed in the second layer 104. However, it is not necessary for the entire second layer 104 to function as a light emitting region. For example, a light emitting region is formed only on the first layer 103 side or the third layer 105 side of the second layer 104. Such a configuration may be used.

  Light emitted from the second layer 104 is extracted outside through one or both of the first electrode 102 and the second electrode 106. Therefore, one or both of the first electrode 102 and the second electrode 106 are made of a light-transmitting substance. When only the first electrode 102 is formed using a light-transmitting substance, light emitted from the second layer 104 passes through the first electrode 102 from the substrate 101 side as illustrated in FIG. It is taken out. In addition, in the case where only the second electrode 106 is formed using a light-transmitting substance, light emitted from the second layer 104 is transmitted through the second electrode 106 as illustrated in FIG. Then, the substrate 101 is taken out from the opposite side. When each of the first electrode 102 and the second electrode 106 is formed using a light-transmitting substance, as illustrated in FIG. 1C, the light emitted from the second layer 104 is The first electrode 102 and the second electrode 106 are taken out from both the substrate 101 side and the opposite side of the substrate 101.

  Note that in this embodiment, the first electrode 102, the first layer 103, the second layer 104, the third layer 105, and the second electrode 106 are sequentially stacked over the substrate 101. However, the present invention is not limited to this configuration, and a configuration in which the substrate 101 is stacked opposite to the above configuration may be employed. That is, as shown in FIG. 5, the second electrode 106, the third layer 105, the second layer 104, and the first layer 103 that are sequentially stacked on the second electrode 106, Further, the first electrode 102 provided thereon may be used. Even in such a structure, by forming a light-transmitting electrode in either one or both of the first electrode 102 and the second electrode 106, FIGS. 5A to 5C are used. As shown, light emitted from the second layer 104 can be extracted to the outside through one or both of the first electrode 102 and the second electrode 106.

  In this embodiment mode, a light-emitting element is manufactured over a substrate made of glass, plastic, or the like. A passive display device can be manufactured by manufacturing a plurality of such light-emitting elements over a substrate. In addition to a substrate made of glass, plastic, or the like, a light emitting element may be formed on a thin film transistor (TFT) array substrate, for example. Thus, an active matrix display device in which driving of the light emitting element is controlled by the TFT can be manufactured. Note that the structure of the TFT is not particularly limited, and may be a staggered TFT or an inverted staggered TFT. The driving circuit formed on the TFT array substrate may be composed of N-type and P-type TFTs, or may be composed of only one of N-type and P-type.

  As described above, since the first layer and the third layer are mixed with an organic substance and an inorganic substance, the increase in resistance is small even when these layers are formed thick. However, a light emitting element in which the driving voltage does not increase can be formed. Further, with the above structure, crystallization of the first layer and the third layer can be prevented, so that the lifetime of the light-emitting element can be improved. Furthermore, by forming the light emitting element thick, a short circuit between the electrodes can be prevented and a highly reliable light emitting element can be obtained.

(Embodiment 2)
In this embodiment, one embodiment of a light-emitting element different from the above embodiment will be described below with reference to FIGS. Note that in this embodiment, the same reference numerals are used to denote the same components as those in the above embodiment.

  In the structure of the light-emitting element described in this embodiment, the light-emitting element 210 is provided over a substrate 101 for supporting the light-emitting element 210 and is stacked over the first electrode 102 and the first electrode 102 in order. The first layer 103, the second layer 104, the third layer 205, the fourth layer 206, and the second electrode 106 provided thereon (FIG. 2). Note that the fourth layer 206 is formed using the same material as the third layer 105 in FIG. That is, in this embodiment mode, a structure in which a new layer is provided between the second layer 104 and the third layer 105 in the structure of the light-emitting element 110 illustrated in FIG.

The third layer 205 is formed using a layer containing an oxide semiconductor or metal oxide and a substance having a high electron-transport property. Examples of the oxide semiconductor or metal oxide include molybdenum oxide (MoOx), vanadium oxide (VOx), ruthenium oxide (RuOx), tungsten oxide (WOx), cobalt oxide (CoOx), and nickel oxide (NiOx). ), Copper oxide (CuOx), and the like. In addition, indium tin oxide (ITO), zinc oxide (ZnO), lithium oxide (LiOx), sodium oxide (NaOx), or the like can be used. As a substance having a high electron transporting property, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [ h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc., and a metal complex having a quinoline skeleton or a benzoquinoline skeleton Materials can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ) and other materials such as metal complexes having an oxazole-based or thiazole-based ligand can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. However, any substance other than the above substances can be used as the material for the third layer 205 as long as the substance has a property of transporting more electrons than holes. The third layer 205 is not limited to a single layer and may be a stack of two or more layers formed using the above substances.

  With such a structure, crystallization of the third layer 205 can be suppressed, so that a layer with little increase in resistance can be formed even when the layer is formed thick.

  Note that the first electrode 102, the second electrode 106, the first layer 103, the second layer 104, and the fourth layer 206 are each formed using any of the materials described in the above embodiments. Can be used. In addition, light emitted from the second layer 104 is extracted outside through one or both of the first electrode 102 and the second electrode 106. Therefore, one or both of the first electrode 102 and the second electrode 106 are made of a light-transmitting substance. When only the first electrode 102 is formed using a light-transmitting substance, light emitted from the second layer 104 passes through the first electrode 102 from the substrate 101 side as illustrated in FIG. It is taken out. In the case where only the second electrode 106 is formed using a light-transmitting substance, light emitted from the second layer 104 is transmitted through the second electrode 106 as illustrated in FIG. Then, the substrate 101 is taken out from the opposite side. When each of the first electrode 102 and the second electrode 106 is formed using a light-transmitting substance, as illustrated in FIG. 2C, the light emitted from the second layer 104 is The first electrode 102 and the second electrode 106 are taken out from both the substrate 101 side and the opposite side of the substrate 101.

  Note that in FIG. 2, the first electrode 102, the first layer 103, the second layer 104, the third layer 205, the fourth layer 206, and the second electrode 106 are sequentially stacked over the substrate 101. However, the present invention is not limited to this configuration, and the substrate 101 may be stacked opposite to the above configuration. That is, on the substrate 101, the second electrode 106, the fourth layer 206, the third layer 205, the second layer 104, the first layer 103, which are sequentially stacked on the second electrode 106, Further, the first electrode 102 provided thereon may be used.

  As described above, since the first layer, the third layer, and the fourth layer are mixed with an organic substance and an inorganic substance, the increase in resistance is small even when these layers are formed thick. A light emitting element in which the driving voltage does not increase even when the film thickness is increased can be formed. Further, with the above structure, crystallization of the first layer, the third layer, and the fourth layer can be prevented, so that the lifetime of the light-emitting element can be improved. Furthermore, by forming the light emitting element thick, a short circuit between the electrodes can be prevented and a highly reliable light emitting element can be obtained.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 3)
In this embodiment, one embodiment of a light-emitting element which is different from that in the above embodiment is described below with reference to FIGS. Note that in this embodiment, the same reference numerals are used to denote the same components as those in the above embodiment.

  In the structure of the light-emitting element described in this embodiment mode, as illustrated in FIG. 3, a light-emitting element 310 is provided over a substrate 101 for supporting the light-emitting element 310, and the first electrode 102 and the first electrode The first layer 103, the second layer 104, the third layer 205, and the fourth layer 207 that are sequentially stacked on the layer 102, and the second electrode 106 provided thereon. . That is, in the structure of the light-emitting element 210 illustrated in FIG. 2, the fourth layer 206 is replaced with a layer formed using a different material.

The fourth layer 207 includes a layer containing both a substance having a high electron-transport property and an electron-donating substance (a substance having a function of promoting electron injection) that can donate electrons to the electron-transport material. To do. Examples of the electron transporting substance include tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), and bis (10-hydroxybenzo [h ] -Quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc., a material comprising a metal complex having a quinoline skeleton or a benzoquinoline skeleton Can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ) and other materials such as metal complexes having an oxazole-based or thiazole-based ligand can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used. Examples of the electron-donating substance that can give electrons to these electron-transporting materials include alkali metals such as lithium (Li) and cesium (Cs), magnesium (Mg), calcium (Ca), and strontium. Alkaline earth metals such as (Sr), rare earth metals such as erbium and ytterbium, or compounds such as oxides and halides thereof can be used. An electron-donating material that can be used is selected.

  The fourth layer 207 may be formed using only an electron-donating material that can donate electrons, without limitation to the above structure.

  Note that in this embodiment, the first electrode 102, the second electrode 106, the first layer 103, the second layer 104, and the third layer 205 are each described in the above embodiment mode. Any of these materials can be used. In addition, light emitted from the second layer 104 is extracted outside through one or both of the first electrode 102 and the second electrode 106. Therefore, one or both of the first electrode 102 and the second electrode 106 are made of a light-transmitting substance. When only the first electrode 102 is formed using a light-transmitting substance, light emitted from the second layer 104 passes through the first electrode 102 from the substrate 101 side as illustrated in FIG. It is taken out. Further, in the case where only the second electrode 106 is formed using a light-transmitting substance, light emitted from the second layer 104 is transmitted through the second electrode 106 as illustrated in FIG. Then, the substrate 101 is taken out from the opposite side. In the case where both the first electrode 102 and the second electrode 106 are formed using a light-transmitting substance, as shown in FIG. 3C, light emitted from the second layer 104 is The first electrode 102 and the second electrode 106 are taken out from both the substrate 101 side and the opposite side of the substrate 101.

  Note that in FIG. 3, the first electrode 102, the first layer 103, the second layer 104, the third layer 205, the fourth layer 207, and the second electrode 106 are sequentially stacked over the substrate 101. However, the present invention is not limited to this configuration, and the substrate 101 may be stacked opposite to the above configuration. That is, on the substrate 101, the second electrode 106, the fourth layer 207, the third layer 205, the second layer 104, the first layer 103, which are sequentially stacked on the second electrode 106, Further, the first electrode 102 provided thereon may be used.

  As described above, since the first layer and the third layer are mixed with an organic substance and an inorganic substance, the increase in resistance is small even when these layers are formed thick. However, a light emitting element in which the driving voltage does not increase can be formed. Further, with the above structure, crystallization of the first layer and the third layer can be prevented, so that the lifetime of the light-emitting element can be improved. Furthermore, by forming the light emitting element thick, a short circuit between the electrodes can be prevented and a highly reliable light emitting element can be obtained.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 4)
In this embodiment, one embodiment of a light-emitting element different from that in the above embodiment is described below with reference to FIGS. Note that in this embodiment, the same reference numerals are used to denote the same components as those in the above embodiment.

  In this embodiment mode, a layer is newly provided so as to be in contact with the second electrode in the structure described in the above embodiment mode (FIG. 4). That is, FIG. 4A has a structure in which the fourth layer 208a is newly provided between the third layer 105 and the second electrode 106 in FIG. 4B illustrates a structure in which a fifth layer 208b is newly provided between the fourth layer 206 and the second electrode 106 in FIG. FIG. 4C illustrates a structure in which a fifth layer 208c is newly provided between the fourth layer 207 and the second electrode 106 in FIG.

  The newly provided layers 208 a to 208 c are formed using the same material as that of the first layer 103. That is, a layer containing an oxide semiconductor or metal oxide and a substance having a high hole-transport property is formed.

  Note that in this embodiment mode, as described in the above embodiment mode, by using a light-transmitting substance for one or both of the first electrode 102 and the second electrode 106, Light emitted from the layer 104 is extracted outside through one or both of the first electrode 102 and the second electrode 106.

  In FIG. 4A, the first electrode 102, the first layer 103, the second layer 104, the third layer 105, the fourth layer 208a, and the second electrode 106 are sequentially formed over the substrate 101. However, the present invention is not limited to this configuration, and the substrate 101 may be stacked opposite to the above configuration. That is, over the substrate 101, the second electrode 106, the fourth layer 208a, the third layer 105, the second layer 104, and the first layer 103, which are sequentially stacked over the second electrode 106, Further, the first electrode 102 provided thereon may be used. Similarly, in FIG. 4B, the second electrode 106, the fifth layer 208 b, the fourth layer 206, and the third layer are sequentially stacked over the substrate 101 over the substrate 101. 205, the second layer 104, the first layer 103, and the first electrode 102 provided thereon may be used. Similarly in FIG. 4C, the second electrode 106, the fifth layer 208c, the fourth layer 207, the third layer 205, which are sequentially stacked over the second electrode 106 over the substrate 101, You may comprise from the 2nd layer 104, the 1st layer 103, and the 1st electrode 102 provided on it further.

  As described above, by providing a layer in which an organic substance and an inorganic substance are mixed, even when these layers are formed thick, there is little increase in resistance, so that a light emitting element in which the driving voltage does not increase even when the film thickness is increased is formed. can do. In addition, with the above structure, crystallization of a layer in which an organic substance and an inorganic substance are mixed can be prevented, so that the lifetime of the light-emitting element can be improved. Furthermore, by forming the light emitting element thick, a short circuit between the electrodes can be prevented and a highly reliable light emitting element can be obtained.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 5)
In this embodiment, one embodiment of a cross-sectional view of a display device including the light-emitting element described in the above embodiment will be described with reference to FIGS.

  In FIG. 6, a transistor 11 provided for driving the light emitting element 12 of the present invention is surrounded by a square dotted line. In the light-emitting element 12, a layer 15 in which a plurality of layers is stacked is provided between the first electrode 13 and the second electrode 14, and any one of the structures described in the above embodiments is used. Have. The drain of the transistor 11 and the first electrode 13 are electrically connected by a wiring 17 penetrating the first interlayer insulating film 16 (16a, 16b, 16c). The light emitting element 12 is separated from another light emitting element provided adjacent thereto by a partition wall layer 18. The display device having such a structure is provided over the substrate 10 in this embodiment.

  Note that the transistor 11 illustrated in FIG. 6 is a top-gate transistor in which a gate electrode is provided on the opposite side of the substrate with a semiconductor layer as a center. However, the structure of the transistor 11 is not particularly limited, and may be, for example, a bottom gate type. In the case of a bottom gate, the semiconductor layer forming a channel may be formed with a protective film (channel protection type), or the semiconductor layer forming the channel may be partially concave ( Channel etch type). Note that 21 is a gate electrode, 22 is a gate insulating film, 23 is a semiconductor layer, 24 is an n-type semiconductor layer, 17 is an electrode, and 16a is a protective film.

  Further, the semiconductor layer included in the transistor 11 may be either crystalline or non-crystalline. Moreover, a semi-amorphous etc. may be sufficient.

The semi-amorphous semiconductor is as follows. A semiconductor having an intermediate structure between amorphous and crystalline (including single crystal and polycrystal) and having a third state that is stable in terms of free energy, has a short-range order, and has a lattice distortion. It contains a crystalline region. Further, at least a part of the region in the film contains crystal grains of 0.5 to 20 nm. The Raman spectrum is shifted to the lower wavenumber side than 520 cm ⁻¹ . In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the Si crystal lattice are observed. In order to reduce dangling bonds, at least 1 atomic% or more of hydrogen or halogen is included. It is also called a so-called microcrystalline semiconductor (microcrystal semiconductor). A silicide gas is formed by glow discharge decomposition (plasma CVD). As the silicide gas, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF ₄ or the like can be used. This silicide gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is generally in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less, preferably 100 to 250 ° C. As an impurity element in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon are desirably 1 × 10 ²⁰ / cm ³ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ / cm ³ or less, preferably 1 × 10 ¹⁹ / cm ³ or less. Note that the mobility of a TFT (thin film transistor) using a semi-amorphous semiconductor is approximately 1 to 10 m ² / Vsec.

  Further, specific examples of the crystalline semiconductor layer include those made of single crystal or polycrystalline silicon, silicon germanium, or the like. These may be formed by laser crystallization, or may be formed by crystallization by a solid phase growth method using nickel or the like, for example.

  Note that in the case where the semiconductor layer is formed of an amorphous material, for example, amorphous silicon, the transistor 11 and other transistors (transistors constituting a circuit for driving a light emitting element) are all configured by N-channel transistors. It is preferable that the display device has a structured circuit. Other than the above, a display device including a circuit including one of N-channel and P-channel transistors may be used, or a display device including a circuit including both transistors may be used.

  Further, the first interlayer insulating film 16 may be a multilayer as shown in FIGS. 6A and 6C, or may be a single layer. Note that 16a is made of an inorganic substance such as silicon oxide or silicon nitride, and 16b is made of a siloxane material such as acrylic or siloxane resin, or a self-flattening substance such as silicon oxide that can be coated and formed. Further, 16c is made of a silicon nitride film containing argon (Ar). A siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. In addition, there is no limitation in particular about the substance which comprises each layer, You may use things other than what was described here. Moreover, you may further combine the layer which consists of substances other than these. Thus, the 1st interlayer insulation film 16 may be formed using both an inorganic substance and an organic substance, or may be formed by any one of an inorganic film and an organic film.

  The partition layer 18 preferably has a shape in which the radius of curvature continuously changes at the edge portion. The partition layer 18 is formed using a siloxane material such as acrylic or siloxane resin, a resist, silicon oxide, or the like. The partition wall layer 18 may be formed of any one of an inorganic film and an organic film, or may be formed using both.

  In FIGS. 6A and 6C, only the first interlayer insulating film 16 is provided between the transistor 11 and the light emitting element 12, but as shown in FIG. 6B, the first interlayer insulating film 16 is provided. In addition to the insulating film 16 (16a, 16b), the second interlayer insulating film 19 (19a, 19b) may be provided. In the display device shown in FIG. 6B, the first electrode 13 penetrates through the second interlayer insulating film 19 and is connected to the wiring 17.

  Similar to the first interlayer insulating film 16, the second interlayer insulating film 19 may be a multilayer or a single layer. 19a is made of a self-flattening substance such as a siloxane material such as acrylic or siloxane resin, or silicon oxide that can be coated and formed. Further, 19b is made of a silicon nitride film containing argon (Ar). In addition, there is no limitation in particular about the substance which comprises each layer, You may use things other than what was described here. Moreover, you may further combine the layer which consists of substances other than these. As described above, the second interlayer insulating film 19 may be formed using both an inorganic material and an organic material, or may be formed of any one of an inorganic film and an organic film.

  In the light-emitting element 12, when both the first electrode and the second electrode are formed using a light-transmitting substance, the first electrode and the second electrode are represented by the white arrows in FIG. Light emission can be extracted from both the electrode 13 side and the second electrode 14 side. In addition, in the case where only the second electrode 14 is formed using a light-transmitting substance, light emission is extracted only from the second electrode 14 side as represented by a white arrow in FIG. 6B. be able to. In this case, it is preferable that the first electrode 13 is made of a material having a high reflectivity, or a film (reflective film) made of a material having a high reflectivity is provided below the first electrode 13. In addition, in the case where only the first electrode 13 is formed using a light-transmitting substance, light emission is extracted only from the first electrode 13 side as represented by a white arrow in FIG. be able to. In this case, it is preferable that the second electrode 14 is made of a highly reflective material, or a reflective film is provided above the second electrode 14.

  In the case where the first electrode or the second electrode is formed using a light-transmitting substance, indium tin oxide (ITO), zinc oxide (ITO) is used as the material for the first electrode or the second electrode. A light-transmitting oxide conductive material such as ZnO), indium zinc oxide (IZO), indium tin oxide containing silicon, or zinc oxide (GZO) to which gallium is added can be used.

  On the other hand, when the first electrode or the second electrode is made of a material having high reflectivity, the material of the first electrode or the second electrode is gold (Au), platinum (Pt), nickel (Ni ), Tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), carbon (C), aluminum (Al), manganese (Mn ), A kind of element selected from titanium (Ti) or the like, or a single layer or a laminated structure made of an alloy containing a plurality of such elements can be used. In addition, for example, an alloy containing Al, Ti and C, an alloy containing Al and Ni, an alloy containing Al and C, an alloy containing Al, Ni and C, or an alloy containing Al and Mo are used. be able to. When Al or Al alloy is used as an electrode, a high reflectance can be obtained. Further, when a reflective film is formed, it can be formed using the same material.

  In addition, the light emitting element 12 may be one in which the layer 15 is stacked so as to operate when a voltage is applied so that the potential of the second electrode 14 is higher than the potential of the first electrode 13. Alternatively, the layer 15 may be stacked so as to operate when a voltage is applied so that the potential of the second electrode 14 is lower than the potential of the first electrode 13. In the former case, the transistor 11 is an N-channel transistor, and in the latter case, the transistor 11 is a P-channel transistor.

  As described above, in this embodiment mode, an active display device in which driving of a light-emitting element is controlled by a transistor has been described. In addition to this, a light-emitting element is driven without particularly providing a driving element such as a transistor. A passive display device may be used. A passive display device can also be driven with low power consumption by including the light-emitting element of the present invention that operates at a low driving voltage.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 6)
In this embodiment mode, a circuit configuration of a display device having a display function will be described with reference to FIGS.

  FIG. 7 is a schematic view of a display device to which the light-emitting element described in the above embodiment is applied as viewed from above. In FIG. 7, a pixel portion 6511, a source signal line driver circuit 6512, a writing gate signal line driver circuit 6513, and an erasing gate signal line driver circuit 6514 are provided over a substrate 6500. The source signal line driver circuit 6512, the writing gate signal line driver circuit 6513, and the erasing gate signal line driver circuit 6514 each have an FPC (flexible printed circuit) 6503 that is an external input terminal through a wiring group. Connected. The source signal line driver circuit 6512, the writing gate signal line driver circuit 6513, and the erasing gate signal line driver circuit 6514 receive a video signal, a clock signal, a start signal, a reset signal, and the like from the FPC 6503, respectively. . A printed wiring board (PWB) 6504 is attached to the FPC 6503. Note that the driver circuit portion is not necessarily provided over the same substrate as the pixel portion 6511 as described above. For example, an IC chip mounted on an FPC on which a wiring pattern is formed (TCP) or the like is used. It may be used and provided outside the substrate.

  In the pixel portion 6511, a plurality of source signal lines extending in the column direction are arranged side by side in the row direction. In addition, current supply lines are arranged side by side in the row direction. In the pixel portion 6511, a plurality of gate signal lines extending in the row direction are arranged side by side in the column direction. In the pixel portion 6511, a plurality of sets of circuits including light-emitting elements are arranged.

  FIG. 8 is a diagram illustrating a circuit for operating one pixel. The circuit illustrated in FIG. 8 includes a first transistor 901, a second transistor 902, and a light-emitting element 903.

  Each of the first transistor 901 and the second transistor 902 is a three-terminal element including a gate electrode, a drain region, and a source region, and has a channel region between the drain region and the source region. Here, since the source region and the drain region vary depending on the structure and operating conditions of the transistor, it is difficult to limit which is the source region or the drain region. Therefore, in this embodiment, regions functioning as a source or a drain are referred to as a first electrode and a second electrode, respectively.

  The gate signal line 911 and the writing gate signal line driving circuit 913 are provided so as to be electrically connected or disconnected by a switch 918. The gate signal line 911 and the erasing gate signal line driver circuit 914 are provided so as to be electrically connected or disconnected by a switch 919. The source signal line 912 is provided so as to be electrically connected to either the source signal line driver circuit 915 or the power source 916 by the switch 920. The gate of the first transistor 901 is electrically connected to the gate signal line 911. The first electrode of the first transistor is electrically connected to the source signal line 912, and the second electrode is electrically connected to the gate electrode of the second transistor 902. The first electrode of the second transistor 902 is electrically connected to the current supply line 917, and the second electrode is electrically connected to one electrode included in the light-emitting element 903. Note that the switch 918 may be included in the write gate signal line driver circuit 913. The switch 919 may also be included in the erase gate signal line driver circuit 914. Further, the switch 920 may also be included in the source signal line driver circuit 915.

  There is no particular limitation on the arrangement of transistors, light-emitting elements, and the like in the pixel portion. For example, they can be arranged as shown in the top view of FIG. In FIG. 9, the first electrode of the first transistor 1001 is connected to the source signal line 1004, and the second electrode is connected to the gate electrode of the second transistor 1002. The first electrode of the second transistor is connected to the current supply line 1005, and the second electrode is connected to the electrode 1006 of the light emitting element. Part of the gate signal line 1003 functions as a gate electrode of the first transistor 1001.

  Since the light-emitting element described in the above embodiment is a highly reliable element with little increase in driving voltage associated with accumulation of light emission time, a display device with little increase in power consumption can be obtained by applying it to the pixel portion. Obtainable. Further, the light-emitting element described in the above embodiment can be thickened while suppressing an increase in driving voltage, and it is easy to prevent a short circuit between the electrodes. By applying to the pixel portion, a display device that can display a good image with few defects due to a short circuit can be obtained.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 7)
As a display device formed using the light-emitting element described in the above embodiment mode, a video camera, a digital camera, a goggle-type display (head-mounted display), a navigation system, an acoustic playback device (car audio, audio component, etc.), a computer , A game device, a portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, etc.), and an image playback device (specifically, a DVD (digital versatile disc)) provided with a recording medium. And a device provided with a display capable of displaying the image). Specific examples of these display devices are shown in FIG.

  FIG. 10A illustrates a television receiver which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. By using the light-emitting element described in any of the above embodiments for the display portion 2003, a television receiver can be manufactured. By using the light-emitting element of the present invention for the display portion 2003, a clear image with few defects can be displayed with a low driving voltage.

  FIG. 10B illustrates a digital camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. By using the light-emitting element described in the above embodiment for the display portion 2102, a digital camera can be manufactured. By using the light-emitting element of the present invention for the display portion 2102, a clear image with few defects can be displayed. In addition, since the display can be performed with a low driving voltage, the life of the battery can be extended.

  FIG. 10C illustrates a computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. By using the light-emitting element described in any of the above embodiments for the display portion 2203, a computer can be manufactured. By using the light-emitting element of the present invention for the display portion 2203, a clear image with few defects can be displayed with a low driving voltage. In addition, since the display can be performed with a low driving voltage, the life of the battery can be extended.

  FIG. 10D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. By using the light-emitting element described in the above embodiment for the display portion 2302, a mobile computer can be manufactured. By using the light-emitting element of the present invention for the display portion 2302, a clear image with few defects can be displayed with a low driving voltage. In addition, since the display can be performed with a low driving voltage, the life of the battery can be extended.

  FIG. 10E illustrates a portable image reproducing device (such as a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A2403, a display portion B2404, and a recording medium (DVD or the like) reading portion 2405. Operation key 2406, speaker unit 2407, and the like. A display portion A2403 mainly displays image information, and a display portion B2404 mainly displays character information. By using the light-emitting element described in the above embodiment for the display portion A 2403 and the display portion B 2404, an image reproducing device can be manufactured. Note that the image reproducing device provided with the recording medium includes a game machine and the like. By using the light-emitting element of the present invention for the display portion A 2403 and the display portion B 2404, a clear image with few defects can be displayed with a low driving voltage. In addition, since the display can be performed with a low driving voltage, the life of the battery can be extended.

  FIG. 10F illustrates a goggle type display (head mounted display), which includes a main body 2501, a display portion 2502, and an arm portion 2503. By using the light-emitting element described in any of the above embodiments for the display portion 2502, a goggle-type display can be manufactured. By using the light-emitting element of the present invention for the display portion 2502, a clear image with few defects can be displayed with a low driving voltage. In addition, since the display can be performed with a low driving voltage, the life of the battery can be extended.

  FIG. 10G illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and an eyepiece. Part 2610 and the like. A video camera can be manufactured using the light-emitting element described in the above embodiment for the display portion 2602. By using the light-emitting element of the present invention for the display portion 2602, a clear image with few defects can be displayed with a low driving voltage. In addition, since the display can be performed with a low driving voltage, the life of the battery 2607 can be extended.

  FIG. 10H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. By using the light-emitting element described in the above embodiment for the display portion 2703, a cellular phone can be manufactured. By using the light-emitting element of the present invention for the display portion 2703, a clear image with few defects can be displayed with a low driving voltage. In addition, since the display can be performed with a low driving voltage, the life of the battery can be extended.

  In addition to the electronic devices described above, it can be used for a front-type or rear-type projector.

  As described above, the applicable range of the present invention is extremely wide and can be used for display devices in various fields. Note that this embodiment mode can be freely combined with the above embodiment modes.

  In this example, characteristics of the element structure described in the above embodiment mode will be described below.

In this example, indium tin oxide containing silicon was formed over a substrate by a sputtering method, thereby forming a first electrode. Next, molybdenum (VI) oxide and NPB were formed over the first electrode by a co-evaporation method, so that a first layer containing molybdenum oxide (MoOx) and NPB was formed. Here, the first layer was formed so that the mass ratio of molybdenum oxide and NPB was 1: 4, and the film thickness was 50 nm. Note that co-evaporation is an evaporation method in which evaporation is performed simultaneously from a plurality of evaporation sources. Next, NPB was formed over the first layer by a vacuum evaporation method, and a second layer containing NPB was formed so as to have a thickness of 10 nm. Next, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ) and coumarin 6 are formed on the second layer by a co-evaporation method to form a third layer containing Alq ₃ and coumarin 6. did. Here, the mass ratio of Alq ₃ and coumarin 6 was adjusted to 1 to 0.005. As a result, the coumarin 6 is dispersed in Alq ₃ . The film thickness was set to 40 nm. Next, Alq ₃ was deposited on the third layer by a vacuum evaporation method, and a fourth layer containing Alq ₃ was formed so as to have a thickness of 20 nm. Next, on the fourth layer, Alq ₃ and Li ₂ O (lithium oxide) were formed by a co-evaporation method to form a fifth layer containing Alq ₃ and Li ₂ O. Here, the fifth layer is adjusted so that the mass ratio of Alq ₃ and Li ₂ O is 1: 0.01 (element structure 1) or 1: 0.05 (element structure 2). Both were formed to be 10 nm. Next, aluminum was formed over the fifth layer by a vacuum evaporation method, and a second electrode was formed so as to have a thickness of 200 nm.

  The characteristics of the element structures of the element structure 1 and the element structure 2 are shown in FIG. 13A shows current density-luminance characteristics, FIG. 13B shows voltage-luminance characteristics, and FIG. 13C shows luminance-current efficiency characteristics.

Regarding the element structure 1, when a voltage of 4.6 V was applied, a current flowed at a current density of 11.1 mA / cm ² , and light was emitted with a luminance of 960 cd / m ² . The current efficiency at this time was 8.7 cd / A. As for the element structure 2, when a voltage of 4.6 V was applied, a current flowed at a current density of 12.3 mA / cm ² , and light was emitted with a luminance of 1100 cd / m ² . The current efficiency at this time was 8.9 cd / A. Thus, it was found that high luminance can be obtained at a low voltage by implementing the present invention.

  In this example, the element in the case where the concentration of the oxide semiconductor or metal oxide in the layer including the oxide semiconductor or metal oxide and the substance having a high hole-transport property described in the above embodiment is changed is used. The characteristics will be described below.

  In this example, molybdenum oxide (MoOx) was used as an oxide semiconductor or metal oxide, and two substances of DNTPD or α-NPD were used as substances having a high hole transporting property. Then, two element structures each including an element structure 3 and an element structure 4 were produced, and the characteristics of the element when the concentration of molybdenum oxide was changed for each element structure were considered.

  First, a manufacturing method of the element structure 3 will be described below.

First, indium tin oxide containing silicon was formed over a substrate by a sputtering method to form a first electrode. Next, a molybdenum oxide, DNTPD, and rubrene were formed over the first electrode by a co-evaporation method to form a first layer containing molybdenum oxide, DNTPD, and rubrene. Here, the film thickness was set to 120 nm. Note that the co-evaporation method is an evaporation method in which evaporation is performed simultaneously from a plurality of evaporation sources. Next, α-NPB was formed over the first layer by a vacuum evaporation method, and a second layer containing α-NPB was formed. Here, the film thickness was set to 10 nm. Next, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ) and coumarin 6 are formed over the second layer by a co-evaporation method, and a third layer containing Alq ₃ and coumarin 6 is formed. Formed. Here, the mass ratio of Alq ₃ and coumarin 6 was adjusted to 1 to 0.005. As a result, the coumarin 6 is dispersed in Alq ₃ . The film thickness was set to 40 nm. Next, Alq ₃ was formed over the third layer by a vacuum evaporation method, and a fourth layer containing Alq ₃ was formed. Here, the film thickness was set to 40 nm. Next, on the fourth layer, LiF was deposited by a vacuum deposition method to form a fifth layer containing LiF. Here, the film thickness was set to 1 nm. Next, on the fifth layer, aluminum was deposited by a vacuum evaporation method to form a second electrode. The film thickness was set to 200 nm. The structure having the above configuration is referred to as an element structure 3.

  Next, a manufacturing method of the element structure 4 will be described below.

First, indium tin oxide containing silicon was formed over a substrate by a sputtering method to form a first electrode. Next, molybdenum oxide, α-NPD, and rubrene were formed over the first electrode by a co-evaporation method, so that a first layer containing molybdenum oxide, α-NPD, and rubrene was formed. Here, the film thickness was set to 120 nm. Note that the co-evaporation method is an evaporation method in which evaporation is performed simultaneously from a plurality of evaporation sources. Next, α-NPB was formed over the first layer by a vacuum evaporation method, and a second layer containing α-NPB was formed. Here, the film thickness was set to 10 nm. Next, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ) and coumarin 6 are formed over the second layer by a co-evaporation method, and a third layer containing Alq ₃ and coumarin 6 is formed. Formed. Here, the mass ratio of Alq ₃ and coumarin 6 was adjusted to 1 to 0.0025. As a result, the coumarin 6 is dispersed in Alq ₃ . The film thickness was 37 nm. Next, Alq ₃ was formed over the third layer by a vacuum evaporation method, and a fourth layer containing Alq ₃ was formed. Here, the film thickness was set to 37 nm. Next, CaF ₂ was deposited on the fourth layer by a vacuum deposition method to form a fifth layer containing CaF ₂ . Here, the film thickness was set to 1 nm. Next, on the fifth layer, aluminum was deposited by a vacuum evaporation method to form a second electrode. The film thickness was set to 200 nm. The structure having the above configuration is referred to as an element structure 4.

FIG. 11 shows the molybdenum oxide concentration-driving voltage characteristics and FIG. 12 shows the molybdenum oxide concentration-current efficiency characteristics when the luminance of the light-emitting elements of the element structures 3 and 4 is 1000 cd / m ² . In FIG. 11, the horizontal axis represents the molybdenum oxide concentration (wt%), and the vertical axis represents the driving voltage (V) at a luminance of 1000 cd / m ² . In FIG. 12, the horizontal axis represents molybdenum oxide concentration (wt%), and the vertical axis represents current efficiency (cd / A) at a luminance of 1000 cd / m ² . In FIGS. 11 and 12, the mark ● represents the characteristics of the light emitting element (light emitting element 1) of the element structure 3, and the mark ▲ represents the characteristics of the light emitting element (light emitting element 2) of the element structure 4.

From FIG. 11, the driving voltage of the light-emitting element 1 and the light-emitting element 2 at a luminance of 1000 cd / m ² rapidly decreases when the MoOx concentration is 10 to 30 wt%, and thereafter becomes a constant voltage. On the other hand, as shown in FIG. 12, the current efficiency of the light emitting element 1 and the light emitting element 2 at a luminance of 1000 cd / m ² decreases as the MoOx concentration increases. For this reason, when using the element structure 3 and the element structure 4 shown in this embodiment, the concentration of MoOx contained in the first layer is preferably 5 to 50 wt%, more preferably 15 to 40 wt%. The element structure may be formed so as to be adjusted.

  Note that this embodiment can be freely combined with the above embodiment mode.

FIG. 6 illustrates a structure of a light-emitting element of the present invention. FIG. 6 illustrates a structure of a light-emitting element of the present invention. FIG. 6 illustrates a structure of a light-emitting element of the present invention. FIG. 6 illustrates a structure of a light-emitting element of the present invention. FIG. 6 illustrates a structure of a light-emitting element of the present invention. FIG. 6 is a cross-sectional view of a display device using the light-emitting element of the present invention. The figure which shows the upper surface of the panel of the display apparatus of this invention. FIG. 11 illustrates a circuit of a pixel portion in a display device of the present invention. FIG. 6 illustrates a pixel portion of a display device using a light-emitting element of the present invention. FIG. 14 illustrates a display device using a light-emitting element of the present invention. FIG. 6 shows MoOx concentration-driving voltage characteristics of a light-emitting element. FIG. 6 shows MoOx concentration-current efficiency characteristics of a light-emitting element. The figure which shows the characteristic of the element structure of this invention.

Explanation of symbols

101 Substrate 102 1st electrode 103 1st layer 104 2nd layer 105 3rd layer 106 2nd electrode 205 3rd layer 206 4th layer 207 4th layer 110 Light emitting element 210 Light emitting element 310 Light emission Element 208a Fourth layer 208b Fifth layer 208c Fifth layer

Claims (15)

A first layer, a second layer, a third layer, and a fourth layer, which are sequentially stacked between a first electrode and a second electrode provided to face each other; ,
The first layer includes a than metallic oxide and an electron is high transportability of holes substance,
The second layer includes a luminescent material;
It said third layer includes a higher than metallic oxide and a hole electron transporting material,
The fourth layer, the light emitting device characterized by than metallic oxide and an electron-transporting property of holes and a high mass. A first layer, a second layer, a third layer, and a fourth layer, which are sequentially stacked between a first electrode and a second electrode provided to face each other; ,
The first layer includes a than metallic oxide and an electron is high transportability of holes substance,
The second layer includes a luminescent material;
It said third layer comprises a material which can donate electrons to higher material electron transporting property than the the electron transport substance having a high hole than metallic oxide and the hole,
The fourth layer, the light emitting device characterized by than metallic oxide and an electron-transporting property of holes and a high mass. A first layer, a second layer, a third layer, and a fourth layer, which are sequentially stacked between a first electrode and a second electrode provided to face each other; ,
The first layer includes an oxide semiconductor and a substance having a higher hole-transport property than electrons,
The second layer includes a luminescent material;
The third layer includes an oxide semiconductor and a substance having a higher electron transporting property than holes,
The light emitting element is characterized in that the fourth layer contains an oxide semiconductor and a substance having a property of transporting more holes than electrons. A first layer, a second layer, a third layer, and a fourth layer, which are sequentially stacked between a first electrode and a second electrode provided to face each other; ,
The first layer includes an oxide semiconductor and a substance having a higher hole-transport property than electrons,
The second layer includes a luminescent material;
The third layer includes an oxide semiconductor, a substance having a higher electron transportability than holes, and a substance capable of donating electrons to a substance having a higher electron transportability than holes.
The light emitting element is characterized in that the fourth layer contains an oxide semiconductor and a substance having a property of transporting more holes than electrons. A first layer, a second layer, a third layer, a fourth layer, and a fifth layer, which are sequentially stacked between a first electrode and a second electrode that are provided to face each other. And having a layer of
The first layer includes a than metallic oxide and an electron is high transportability of holes substance,
The second layer includes a luminescent material;
It said third layer includes a higher than metallic oxide and a hole electron transporting material,
It said fourth layer comprises a material which can donate electrons to higher material electron transporting property than the the electron transport substance having a high hole than metallic oxide and the hole,
The fifth layer, the light emitting device characterized by than metallic oxide and an electron-transporting property of holes and a high mass. A first layer, a second layer, a third layer, a fourth layer, and a fifth layer, which are sequentially stacked between a first electrode and a second electrode that are provided to face each other. And having a layer of
The first layer includes a than metallic oxide and an electron is high transportability of holes substance,
The second layer includes a luminescent material;
It said third layer includes a higher than metallic oxide and a hole electron transporting material,
The fourth layer includes a substance having a higher electron-transport property than holes and a substance capable of donating electrons to a substance having a higher electron-transport property than holes.
The fifth layer, the light emitting device characterized by than metallic oxide and an electron-transporting property of holes and a high mass. A first layer, a second layer, a third layer, a fourth layer, and a fifth layer, which are sequentially stacked between a first electrode and a second electrode that are provided to face each other. And having a layer of
The first layer includes an oxide semiconductor and a substance having a higher hole-transport property than electrons,
The second layer includes a luminescent material;
The third layer includes an oxide semiconductor and a substance having a higher electron transporting property than holes,
The fourth layer includes an oxide semiconductor, a substance having a higher electron transportability than holes, and a substance capable of donating electrons to a substance having a higher electron transportability than holes.
The fifth layer includes an oxide semiconductor and a substance having a hole-transport property higher than that of electrons. A first layer, a second layer, a third layer, a fourth layer, and a fifth layer, which are sequentially stacked between a first electrode and a second electrode that are provided to face each other. And having a layer of
The first layer includes an oxide semiconductor and a substance having a higher hole-transport property than electrons,
The second layer includes a luminescent material;
The third layer includes an oxide semiconductor and a substance having a higher electron transporting property than holes,
The fourth layer includes a substance having a higher electron-transport property than holes and a substance capable of donating electrons to a substance having a higher electron-transport property than holes.
The fifth layer includes an oxide semiconductor and a substance having a hole-transport property higher than that of electrons . In any one of Claims 1 thru | or 4 ,
The light emitting element, wherein the first layer and the fourth layer are formed of the same material. In any one of Claims 5 thru | or 8 ,
The light emitting element, wherein the first layer and the fifth layer are formed of the same material. In any one of Claim 2, Claim 4 thru | or Claim 8 ,
The substance capable of donating an electron to a substance having a higher electron transporting property than the hole is lithium, cesium, magnesium, calcium, strontium, erbium, ytterbium, an oxide or a halide thereof. A light emitting device characterized by the above. In any one of Claims 1 to 2 and Claims 5 to 6 ,
Before Kikin genus oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, cobalt oxide, nickel oxide, copper oxide, indium oxide, zinc oxide, lithium oxide, sodium oxide A light-emitting element which is any one of the objects. In any one of Claims 3 to 4 and Claims 7 to 8,
The oxide semiconductor includes molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, cobalt oxide, nickel oxide, copper oxide, indium oxide, zinc oxide, lithium oxide, and sodium oxide. One of the light-emitting elements. In any one of Claims 1 thru | or 13 ,
The light-emitting element, wherein the first layer includes molybdenum oxide and 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl. Display apparatus comprising the light-emitting device according to the pixel unit in any one of claims 1 to 14.