JP4778188B2 - 化合物半導体単結晶の製造方法 - Google Patents

化合物半導体単結晶の製造方法 Download PDF

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Publication number
JP4778188B2
JP4778188B2 JP2002249963A JP2002249963A JP4778188B2 JP 4778188 B2 JP4778188 B2 JP 4778188B2 JP 2002249963 A JP2002249963 A JP 2002249963A JP 2002249963 A JP2002249963 A JP 2002249963A JP 4778188 B2 JP4778188 B2 JP 4778188B2
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Japan
Prior art keywords
crystal
crucible
raw material
grown
growth
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JP2002249963A
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English (en)
Japanese (ja)
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JP2004099333A5 (https=
JP2004099333A (ja
Inventor
聰明 朝日
賢次 佐藤
篤俊 荒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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Publication date
Priority to JP2002249963A priority Critical patent/JP4778188B2/ja
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to PCT/JP2002/013165 priority patent/WO2003068696A1/ja
Priority to DE60233170T priority patent/DE60233170D1/de
Priority to EP02786108A priority patent/EP1500633B1/en
Priority to US10/502,228 priority patent/US7229494B2/en
Priority to TW092101996A priority patent/TWI257963B/zh
Publication of JP2004099333A publication Critical patent/JP2004099333A/ja
Publication of JP2004099333A5 publication Critical patent/JP2004099333A5/ja
Application granted granted Critical
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Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2002249963A 2002-02-13 2002-08-29 化合物半導体単結晶の製造方法 Expired - Lifetime JP4778188B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002249963A JP4778188B2 (ja) 2002-02-13 2002-08-29 化合物半導体単結晶の製造方法
DE60233170T DE60233170D1 (de) 2002-02-13 2002-12-17 Verfahren zur herstellung eines verbindungshalbleiter-einkristalls
EP02786108A EP1500633B1 (en) 2002-02-13 2002-12-17 Production method for compound semiconductor single crystal
US10/502,228 US7229494B2 (en) 2002-02-13 2002-12-17 Production method for compound semiconductor single crystal
PCT/JP2002/013165 WO2003068696A1 (en) 2002-02-13 2002-12-17 Production method for compound semiconductor single crystal
TW092101996A TWI257963B (en) 2002-02-13 2003-01-29 Method for producing compound semiconductor single crystal

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002035551 2002-02-13
JP2002035551 2002-02-13
JP2002208530 2002-07-17
JP2002208530 2002-07-17
JP2002249963A JP4778188B2 (ja) 2002-02-13 2002-08-29 化合物半導体単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2004099333A JP2004099333A (ja) 2004-04-02
JP2004099333A5 JP2004099333A5 (https=) 2005-06-30
JP4778188B2 true JP4778188B2 (ja) 2011-09-21

Family

ID=27738906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002249963A Expired - Lifetime JP4778188B2 (ja) 2002-02-13 2002-08-29 化合物半導体単結晶の製造方法

Country Status (6)

Country Link
US (1) US7229494B2 (https=)
EP (1) EP1500633B1 (https=)
JP (1) JP4778188B2 (https=)
DE (1) DE60233170D1 (https=)
TW (1) TWI257963B (https=)
WO (1) WO2003068696A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252300B2 (ja) 2002-12-18 2009-04-08 日鉱金属株式会社 化合物半導体単結晶の製造方法および結晶成長装置
JP5352245B2 (ja) * 2007-02-14 2013-11-27 Ｊｘ日鉱日石金属株式会社 化合物半導体単結晶の製造方法および結晶成長装置
US9822466B2 (en) 2013-11-22 2017-11-21 Corner Star Limited Crystal growing systems and crucibles for enhancing heat transfer to a melt
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法
CN112176395A (zh) * 2020-10-13 2021-01-05 福建福晶科技股份有限公司 一种优质大尺寸BiBO晶体熔盐法生长的装置和方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027693A (ja) 1983-07-21 1985-02-12 Toshiba Corp 化合物半導体単結晶の製造方法
JPS6126590A (ja) 1984-07-17 1986-02-05 Sumitomo Electric Ind Ltd 化合物半導体単結晶の引上方法及び装置
JPS6287489A (ja) * 1985-10-12 1987-04-21 Sumitomo Electric Ind Ltd るつぼの回収方法及び装置
JPH0699228B2 (ja) 1986-06-06 1994-12-07 住友電気工業株式会社 単結晶の引上方法
JPS63195188A (ja) 1987-02-06 1988-08-12 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法および製造装置
JPH01294592A (ja) 1988-05-23 1989-11-28 Sumitomo Electric Ind Ltd 単結晶の育成方法
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
DE69122599T2 (de) * 1990-07-26 1997-04-03 Sumitomo Electric Industries Verfahren und gerät zur herstellung von einkristallen
JPH0717792A (ja) 1993-06-30 1995-01-20 Sumitomo Electric Ind Ltd 化合物半導体結晶の製造装置

Also Published As

Publication number Publication date
EP1500633B1 (en) 2009-07-29
JP2004099333A (ja) 2004-04-02
EP1500633A1 (en) 2005-01-26
US7229494B2 (en) 2007-06-12
US20050118739A1 (en) 2005-06-02
TWI257963B (en) 2006-07-11
TW200302883A (en) 2003-08-16
EP1500633A4 (en) 2007-10-24
WO2003068696A1 (en) 2003-08-21
DE60233170D1 (de) 2009-09-10

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