JP4758829B2 - Charged beam drawing apparatus and drawing method - Google Patents

Description

  The present invention relates to a charged beam drawing apparatus and a drawing method, and in particular, when drawing a pattern such as an LSI on a substrate such as a mask or wafer, charging that corrects a variation in pattern dimensions due to a drawing time difference at a position on the substrate. The present invention relates to a beam drawing apparatus and a drawing method.

  For example, in photolithography in the manufacture of semiconductor devices, the exposure wavelength is shortened, the optical lens has a high NA (Numerical Aperture), or super-resolution technology such as a phase shift mask is used on the wafer. A circuit pattern dimension of a semiconductor element of 65 nm or less has been achieved.

  In the manufacture of a mask substrate (reticle) used in a stepper apparatus or the like for reduced projection exposure, the original pattern size, which is an original drawing of an LSI circuit pattern, is reduced, for example, in the case of a quadruple reticle with the miniaturization of the semiconductor device. Therefore, it decreases to about 0.25 μm or less. Further, when the reduction projection magnification is reduced, the original pattern size is further reduced. In addition, the reticle size increases, and it is necessary to control the dimensional accuracy of the original image within the reticle plane. For this reason, in the mask manufacturing, it is necessary to use a chemically amplified resist as in the case of forming a resist pattern on a wafer.

This chemically amplified resist contains a photoacid generator in addition to a base resin, a crosslinking agent or a dissolution inhibitor for high sensitivity and high resolution, and is generated by exposure to energy rays such as ultraviolet light and electron beams. Acid (H ⁺ ) catalysis is used. However, the acid generated in the pattern latent image region of the chemically amplified resist by the transport energy of the exposure diffuses in the resist with the elapsed time after the exposure. And it is easy to cause the time-dependent change of the sensitivity of a chemically amplified resist (patent document 1).

  On the other hand, in charged (electron) beam writing in mask manufacturing, a considerable writing time difference occurs at a position on the reticle surface. This drawing time difference depends on the drawing pattern data of the mask to be manufactured, and becomes about 5 to 20 hours when the pattern data amount increases with the increase in density and capacity of the LSI. There is a difference in the elapsed time from the resist drawing to the PEB (Post Exposure Bake) process. For this reason, in the case of manufacturing a mask using a chemically amplified resist, the resist sensitivity easily changes due to the above-described difference in elapsed time at a position on the reticle surface. Thus, the dimensional variation of the original pattern due to the drawing time difference is unavoidable.

  The pattern dimension change caused by the elapsed time difference after writing at the position on the reticle surface in the charged beam writing will be described with reference to FIGS. Here, FIG. 7 is a perspective view showing an example of drawing an electron beam applied to the chemically amplified resist on the substrate 11 such as a reticle. FIG. 8 is a graph showing an example of variations in resist pattern dimensions at the substrate position in the direction of arrow P shown on the substrate 11 in FIG. 7 after the electron beam drawing and development to form a resist pattern.

  For example, a chemically amplified resist is applied to the surface of a substrate 11 made of quartz glass on which a chromium (Cr) film as a light shielding film is formed. Then, for example, in the electron beam drawing process, as shown in FIG. 7, the electron beam 12 draws the drawing pattern of the subfield or drawing frame, which is the drawing unit region, by the electron beam deflection of the deflector 13. Furthermore, due to the continuous movement of the XY stage (not shown) on which the substrate 11 is mounted in the X direction (or -X direction), the electron beam 12 is a region having a predetermined width (for example, 1 mm width) along the X direction. That is, all the drawing patterns existing in the drawing stripe are drawn.

  When all the drawing patterns of the one drawing stripe are drawn, the electron beam 12 causes a step movement of the drawing stripe width in the Y direction of the XY stage, and draws the drawing pattern of the next drawing stripe. Then, by repeating this process, the chemically amplified resist on the substrate 11 is exposed along the dotted line as shown in FIG. 7 so that the entire region becomes a desired original pattern by the electron beam. However, in the electron beam drawing, as shown in FIG. 7, the elapsed time difference after the drawing as described above inevitably occurs along the drawing path indicated by the dotted line on the substrate 11. In particular, the time difference increases in the Y direction of the substrate 11.

Next, for the chemical amplification resist development, if, for example, alkali development is performed through PEB after the electron beam drawing on the substrate 11, a change in pattern dimension due to the elapsed time difference after the drawing appears. As shown in FIG. 8, the pattern dimension of the chemically amplified resist after development, that is, the resist pattern dimension, increases monotonously in the direction of arrow P from the top to the bottom of the central portion of the substrate 11. Here, in the electron beam drawing step, the chemically amplified resist is exposed to a drawing pattern of the same size.
As described above, in mask manufacturing using a chemically amplified resist, a change in resist sensitivity due to a difference in elapsed time after writing occurs at a position on the reticle surface, which is a substrate, and the dimensional accuracy of the finished original pattern tends to be lowered.

In addition, the degree of reduction in the original pattern dimensional accuracy due to the difference in elapsed time after drawing varies depending on the type of chemical amplification resist composition or the positive type / negative type. In addition, the reduction in the accuracy of the original picture pattern dimension becomes conspicuous as the pattern dimension becomes finer or the substrate size increases.
Japanese Patent Laid-Open No. 11-67653

  However, a charged beam drawing apparatus and a drawing method that can easily and accurately control fluctuations in the size of an original image pattern due to a difference in elapsed time after drawing on the substrate surface have not yet been developed. Here, for example, it is conceivable to change the irradiation amount so as to compensate for the change in the resist pattern dimension by the conventional method of correcting the irradiation amount of the beam. However, since the drawing time from the start of drawing to the end of drawing on the substrate surface varies depending on the amount of drawing pattern data, etc., the dimensional change amount cannot be accurately estimated by this method, and the dose correction cannot be performed appropriately.

In the PEB process, for example, a method of correcting the dimensional change by giving a temperature distribution to a hot plate is also conceivable. However, although this method can cope with a single dimensional change, the correction is not possible for a plurality of types of reticles with different drawing patterns and different elapsed time differences after drawing. It cannot be made efficient or free.
Such a problem occurs not only when the substrate is a reticle but also when writing directly with a charged beam on a substrate such as a wafer.

  The present invention has been made in view of the above circumstances. When pattern drawing is performed on a substrate such as a mask substrate or a wafer, the pattern dimension change accompanying the elapsed time difference after drawing at a position on the substrate surface can be easily increased. It is an object of the present invention to provide a charged beam drawing apparatus and a drawing method that can be corrected efficiently and freely.

  In order to achieve the above object, a charged beam drawing apparatus according to the present invention includes a drawing optical system that generates a charged beam for drawing a pattern on a resist on a substrate and focuses and deflects the charged beam, and the substrate. In a charged beam drawing apparatus comprising: a stage that moves a substrate relative to the charged beam; a substrate chamber in which the stage is disposed; and a drawing control system that controls drawing of the charged beam and movement of the stage An elapsed time calculating means for calculating an elapsed time after the drawing at a position on the substrate surface based on drawing time information recorded in the drawing control system; and the elapsed time obtained by the elapsed time calculating means Dimensional change amount calculating means for converting the pattern dimensional change amount to the pattern dimensional change amount, and the pattern dimensional change amount obtained by the dimensional change amount calculating means A heating temperature calculating means for converting, has the heat treatment temperature to the structure and a substrate heating means for heating the resist is set to a position on the substrate surface.

  The charged beam drawing method according to the present invention includes a step of generating a drawing time information by recording a drawing time of the charged beam and a movement time of the substrate when drawing a pattern on a resist on the substrate, and the drawing time. Based on the information, a step of calculating the elapsed time after the drawing at the position on the substrate surface, a step of converting the elapsed time at the position on the substrate surface into a pattern dimension change amount, and the pattern dimension change amount Is converted to a heat treatment temperature, and the heat treatment temperature is set at a position on the substrate surface and the resist is heat treated.

  According to the present invention, when a pattern is drawn on a substrate such as a mask substrate or a wafer, it is possible to easily and accurately correct a pattern dimension change accompanying an elapsed time difference after writing at a position on the substrate surface.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram showing an example of a charged beam drawing apparatus of this embodiment. Here, the charged beam is not particularly limited, and examples thereof include an electron beam and an ion beam. In the following embodiment, an example in which an electron beam is used as a charged beam will be described.

  In the figure, reference numeral 14 denotes a substrate chamber. The substrate chamber 14 accommodates a stage 15 on which a substrate 11 such as a mask substrate is placed. The stage 15 is driven by the stage drive circuit 16 in the X direction (left and right direction on the paper surface) and in the Y direction (front and back direction on the paper surface). The moving position of the stage 15 is measured by a position circuit 17 using, for example, a laser length meter.

  A drawing optical system 20 is disposed above the substrate chamber 14. The drawing optical system 20 includes an electron gun 19, various lenses 21 to 25, a blanking deflector 26, a beam size variable deflector 27, and a beam scanning main deflector provided in an electron optical column 18. 13a, a sub deflector 13b, two beam shaping apertures 28 and 29, and the like.

Then, the main deflector 13a positions in a predetermined sub-deflection area (subfield) on the substrate 11, and the sub-deflector 13b performs graphic drawing positioning in the subfield, and the beam size variable deflector 27 and the beam. The beam shape is controlled by the shaping apertures 28 and 29. Then, while the stage 15 is continuously moved in the X direction as described with reference to FIG. In this way, all the drawing frames of the drawing stripes that are within the range that can be drawn by one continuous stage movement are drawn. Further, the stage 15 is moved stepwise in the direction orthogonal to the continuous movement direction (Y direction in FIG. 7), and the above processing is repeated to sequentially draw the drawing stripes.
Here, the drawing frame is a strip-like drawing area determined by the deflection width of the main deflector 13a, and the subfield is a unit drawing area determined by the sub deflector 13b.

  On the other hand, in the drawing control system 30, a magnetic disk (storage medium) 32 is connected to the control calculation unit 31, and drawing data obtained by converting an original pattern for LSI into a charged beam drawing apparatus is stored on this disk 32. Stored. The drawing pattern data read from the magnetic disk 32 is temporarily stored in the pattern memory unit for each drawing frame. Then, the drawing pattern data for each drawing frame, that is, the frame information composed of the drawing position and the basic graphic data is decoded by the data decoding unit, and the blanking circuit 33, the beam shaper driver 34, the main deflector driver 35, and It is sent to the sub deflector driver 36.

  The blanking circuit 33 is connected to the blanking deflector 26 so as to change the irradiation amount of the electron beam 12. The beam shaper driver 34 is connected to a deflector 27 for changing the beam size, and controls the shape and size of the electron beam 12. The main deflector driver 35 is connected to the main deflector 13a, and deflects and scans the electron beam 12 with a designated drawing frame. Further, the sub deflector driver 36 is connected to the sub deflector 13b so as to perform electron beam drawing inside the sub field.

  The control calculation unit 31 controls the continuous movement of the stage 15 in the X direction and the step driving in the Y direction via the stage driving circuit 16 described above. Here, the moving position of the stage 15 is measured via the position circuit 17 and fed back to the control calculation unit 31.

  The control calculation unit 31 includes a timer, and records the drawing time of the drawing frame or drawing stripe of the electron beam 12 and the movement time of the stage 15 as a drawing history to generate drawing time information. Here, as described later, the drawing history is preferably recorded in units of blocks created on the substrate surface by the time map calculation unit 41.

  Further, the charged beam drawing apparatus is provided with a drawing pattern correction system 40 that is a feature of the present embodiment. The drawing pattern correction system 40 includes a time map calculation unit 41, a pattern dimension change (ΔCD) map calculation unit 42, a temperature map calculation unit 43, and a resist heating processing unit 44. Here, the time map calculation unit 41, the ΔCD map calculation unit 42, and the temperature map calculation unit 43 are connected to the control calculation unit 31 in the present embodiment, but may be integrated with the control calculation unit 31. Good. In addition, although the details of the resist heating processing unit 44 will be described later, the resist heating processing unit 44 may be configured to communicate with the substrate chamber 14 via, for example, a load lock chamber, or may be isolated from the substrate chamber 14. It doesn't matter.

  The time map calculation unit 41 creates an elapsed time map after drawing at a position on the surface of the substrate 11 based on drawing time information of the charged beam drawing apparatus. The elapsed time after the drawing is usually the elapsed time until the drawing of the substrate 11 is finished. Alternatively, the elapsed time may be the time until PEB. The time map calculation unit 41 has a data input / output unit and can freely input time data from the end of drawing to PEB. Further, a block to be created on the substrate surface described later can be arbitrarily designated.

  Next, a method for creating the elapsed time map on the surface of the substrate 11 will be described with reference to FIG. FIG. 2 is a top view for explaining the drawing from the drawing start position to the drawing end position of the substrate 11. As shown in FIG. 2, it is assumed that the electron beam 12 moves on the substrate 11 as shown by an arrow and draws the entire surface thereof. As described above, the drawing pattern in the subfield and the drawing frame 37 is changed in the drawing stripe 38 by the scanning of the electron beam 12 of the main deflector 13a and the sub deflector 13b and the continuous movement of the stage driving circuit 16 in the X direction. Is drawn on the substrate 11.

Therefore, the control calculation unit 31 divides the drawing stripe 38 into, for example, equal divisions by using the blocks A _{1 to} A _m as a set of the drawing frames 37 including a certain number designated by the time map calculation unit 41. Then, the time of drawing the last drawing pattern in each block _A i (i = 1~m), assigned as the drawing time for each block _A i (i = 1~m). The drawing time of the last drawing pattern in each block A _i (i = 1 to m) is determined by measuring the substrate position by the position circuit 17 and measuring the drawing time of the last drawing pattern by a timer.

Then, when the drawing of one drawing stripe 38 is completed, step movement in the Y direction occurs as described above. Therefore, in the same manner as described above in the new drawing stripes 38 of the next, the allocation of the drawing time for each block A _j of the new drawing stripe is performed. By repeating this, the assignment of the drawing time to the block A _n of the last drawing stripe is performed. As the drawing time of each block A _i, the drawing time of the first drawing pattern in each block A _i (i = 1 to n) may be used. In this way, the control calculation unit 31 generates drawing time information in units of the blocks that divide the substrate surface.

Then, the time map calculation unit 41 extracts the drawing time information in the control arithmetic unit 31, the elapsed time that is derived by calculating back from the drawing time of the last block A _n, respectively block A _{i (i} = 1 to n), an elapsed time map after drawing is created. In this way, the substrate 11 is equally divided into blocks A _i (i = 1 to n) each having an elapsed time after drawing. Here, as described above, the division of the substrate 11 by such blocks can be arbitrarily changed by designating the number of drawing frames 37 to be assembled. The block may be formed across a plurality of drawing stripes.

  The ΔCD map calculation unit 42 creates the ΔCD map of the resist based on the characteristics of the pattern dimension change amount in the elapsed time after the writing of the chemical amplification resist used. The ΔCD map calculation unit 42 has a data input / output unit. Here, in a typical positive resist, the width of the drawing pattern becomes narrower with the elapsed time after writing, and the pattern dimension change amount (ΔCD) depends on the elapsed time after writing as shown in FIG. This ΔCD is expressed by the following equation: ΔCD = −a√t where t is the elapsed time after drawing. Here, a is a positive coefficient depending on the type of resist.

In such a case, the elapsed time map of the surface of the substrate 11 created by the time map calculation unit 41 is converted into a ΔCD map according to the above formula. That is, ΔCD is assigned to each block A _i (i = 1 to n) obtained by dividing the substrate 11.

  However, the characteristics of the pattern variation of the chemically amplified resist over time varies depending on the positive resist or the negative resist, and also varies depending on the type of the dissolution inhibitor or the crosslinking agent even if the resist is the same type. This is because the limit amount of the acid concentration necessary for the catalytic action of the decomposition of the dissolution inhibitor or the crosslinking of the base resin varies depending on these types. Therefore, the elapsed time map is converted into a ΔCD map by numerical calculation from the relationship between ΔCD and elapsed time of the chemically amplified resist obtained experimentally in advance. The relationship between ΔCD and elapsed time is input to the ΔCD map calculation unit 42 from the data input / output unit.

The temperature map calculation unit 43 sets a temperature map on the substrate surface when a resist after drawing, which will be described later, is heated. The temperature map calculation unit 43 also has a data input / output unit. Here, a temperature map that cancels the above-described resist ΔCD is created based on the temperature characteristic of the change in the drawing pattern dimension in the heat treatment, which is a characteristic specific to the chemically amplified resist used. Here, for example, as shown in FIG. 3, the heating temperature is calculated so that the ΔCD of the resist generated in the elapsed time after the drawing is offset. The ΔCD map of the surface of the substrate 11 created by the ΔCD map calculation unit 42 is converted into a heating temperature map. This heating temperature is assigned to each of the blocks A _i (i = 1 to n) formed in the time map calculation unit 41.

  In the calculation of the heating temperature, characteristics measured in advance with respect to changes in the drawing pattern dimensions due to the heating temperature of the resist are used. An example of such characteristics is shown in FIG. In FIG. 4, in accordance with FIG. 3, the horizontal axis represents the pattern dimension change amount in which the dimension width becomes narrower after drawing, and the vertical axis represents the heating temperature at which the dimension is increased to recover the narrowed pattern dimension. . As described above, a high heating temperature is assigned to a place where the elapsed time after the drawing described with reference to FIG. 3 becomes long and ΔCD becomes large.

  In the above case, for example, in the positive resist, the acid generated in the resist by the drawing of the electron beam 12 is deactivated with the elapsed time after the drawing and the pattern becomes thin. However, when the heat treatment is performed, the acid deactivated in the resist pattern can be compensated, so that the thinness of the pattern dimension is offset.

  The temperature characteristics of drawing pattern dimension change in the heat treatment of the chemically amplified resist also differ depending on the positive type resist or the negative type resist, and also differ depending on the type of the dissolution inhibitor or the crosslinking agent even if the resist is the same type. For this purpose, an appropriate heating temperature is calculated by numerical calculation from the temperature characteristics of the chemically amplified resist obtained experimentally in advance. Here, the temperature characteristic data is input from the data input / output unit of the temperature map calculation unit 43.

Then, the resist heat treatment unit 44 performs heat treatment of the substrate 11 after drawing according to the temperature map. For example, as shown in FIG. 5, the substrate 11 is placed on the surface of the heating plate 39 configured as an assembly of heater blocks B _i (i = 1 to N), and the heating temperature calculated by the temperature map calculation unit 43. Is applied to the resist on the substrate 11 for a predetermined time (for example, about 2 minutes). Here, each heater block B _i (i = 1 to N) is an independent heating region, and the temperature of the above-described temperature map is set to each block A _i (i = 1 to n) of the substrate 11. It can be set. Here, the surface area of the heater block B _i (i = 1 to N) has the same structure as or smaller than each block A _i (i = 1 to n) area.

In addition, in the resist heat treatment unit 44, the substrate 11 after drawing can be subjected to heat treatment using a heat treatment apparatus using infrared beam irradiation. In this case, an infrared beam whose intensity is changed according to the temperature map is irradiated from the back side of the substrate 11. In this heat treatment apparatus using infrared beam irradiation, even when the number of blocks A _i (i = 1 to n) of the substrate 11 increases and a fine temperature map is obtained, appropriate heat treatment can be performed.

Next, an outline of a drawing method using the charged beam drawing apparatus of the present embodiment will be described. First, in accordance with drawing pattern data created by converting an original pattern of LSI, for example, for the drawing apparatus, drawing is performed on the resist on the substrate 11 with, for example, the electron beam 12 by a normal drawing method as described with reference to FIG. Draw a pattern.
In this embodiment, in this drawing, the control calculation unit 31 of the drawing apparatus sets the block A _i (i = 1 to n) of the substrate 11 as shown in FIG. 2 set by the time map calculation unit 41 as drawing time information. ) Is recorded in a drawing history from drawing start to drawing end.

Next, when the drawing of the substrate 11 is completed, the time map calculation unit 41 calculates the elapsed time after drawing in each of the blocks A _i (i = 1 to n) obtained by dividing the substrate 11. The elapsed time after drawing is assigned to each block A _i (i = 1 to n) to create an elapsed time map.

  Next, as described above, the elapsed time of the elapsed time map is converted into ΔCD by the ΔCD map calculation unit 42 based on the characteristics of the pattern dimension change amount in the elapsed time after drawing of the used chemically amplified resist. Create a map.

Next, based on the temperature characteristics of the drawing pattern dimension change in the heat treatment of the used chemically amplified resist, the temperature map calculation unit 43 sets the temperature of the heat treatment that cancels the ΔCD to each block A _i (i = 1 to n). ) To create a temperature map.

Then, the resist heating processing unit 44 heats the substrate 11 for a predetermined time so that each block A _i (i = 1 to n) of the substrate 11 has an appropriate temperature based on the temperature map. .

  After this, the substrate 11 is subjected to development processing, for example, by performing PEB processing. By this development processing, a resist pattern is formed on the substrate 11. Here, the resist pattern dimensional accuracy will be described with reference to FIG. FIG. 6 is a distribution of resist pattern dimensions at positions on the substrate surface in the case of this embodiment shown corresponding to the case of the prior art of FIG. As shown in FIG. 6, in this embodiment, the variation of the resist pattern dimension at the position on the substrate surface is significantly reduced as compared with the conventional technique. For example, the fluctuation on the substrate surface with a pattern width of 250 nm is 2 nm at the maximum, which is 1/3 of the conventional 6 nm. Here, the substrate is a 6-inch square reticle, and the time from the drawing start to the drawing end in drawing the pattern is about 10 hours.

  In the formation of the resist pattern, the heat treatment of the substrate 11 by the resist heat treatment unit 44 may also be used as the PEB treatment, and the development treatment may be performed as it is.

  In the charged beam drawing apparatus of this embodiment, pattern correction is performed so that the change in the drawing pattern dimension caused by the elapsed time after the drawing as in the case of the chemically amplified resist is offset by the heat treatment according to the elapsed time. In this way, the pattern dimensions formed on the substrate surface can be controlled with high precision in the miniaturization of the drawing pattern dimensions, the increase in the number of drawing patterns, or the increase in the substrate size. Further, the correction of the drawing pattern can be automatically performed integrally with the charged beam drawing, so that the drawing pattern can be easily adapted to various drawing patterns with high efficiency.

Although the preferred embodiments of the present invention have been described above, the above-described embodiments do not limit the present invention. Those skilled in the art can make various modifications and changes in specific embodiments without departing from the technical idea and technical scope of the present invention. For example, the above embodiment describes the case where the substrate is a mask substrate and an LSI original pattern is formed. In addition, an original pattern for LCD and an original pattern for circuit board such as PWB are formed. It may be the case. Further, it may be a case where an LSI circuit pattern is directly drawn on the substrate surface of the semiconductor wafer.
The resist is not limited to a chemically amplified resist, and the present invention is similarly applied when the sensitivity changes with time.

1 is a schematic configuration diagram showing an example of a charged beam drawing apparatus according to an embodiment. The top view for demonstrating the drawing between the drawing start position of the board | substrate concerning this embodiment from the drawing end position, and its block division. The graph which shows the elapsed time dependence after drawing of the pattern dimension variation | change_quantity of a resist. The graph which shows the heating temperature which cancels | offsets the pattern dimension variation | change_quantity of the resist of FIG. Perspective view of the heating plate composed of a set of heater block B _i of the present embodiment _(i = _1~N). The distribution pattern of the resist pattern dimension in the position on the substrate surface concerning this embodiment. The typical perspective view of the electron beam drawing which irradiates the board | substrate for demonstrating this invention. The graph which shows the example of a fluctuation | variation of the resist pattern dimension in the position on the board | substrate surface in a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Substrate 12 Electron beam 13 Deflector 13a Main deflector 13b Sub-deflector 14 Substrate chamber 15 Stage 16 Stage drive circuit 17 Position circuit 18 Electron optical barrel 19 Electron gun 20 Drawing optical system 21-25 Various lenses 26 Blanking deflection Device 27 Beam Size Variable Deflector 28, 29 Beam Shaping Aperture 30 Drawing Control System 31 Control Calculation Unit 32 Magnetic Disk 33 Blanking Circuit 34 Beam Shaper Driver 35 Main Deflector Driver 36 Sub Deflector Driver 37 Drawing Frame 38 Drawing Stripe 39 Heating plate 40 Drawing correction system 41 Time map calculation unit 42 CD map calculation unit 43 Temperature map calculation unit 44 Resist heating processing unit A _i (i = 1 to n) Block B _i (i = 1 to n) Heater block

Claims (6)

A drawing optical system that generates a charged beam for drawing a pattern on a resist on a substrate and focuses and deflects the charged beam; a stage that mounts the substrate and moves the substrate relative to the charged beam; In a charged beam drawing apparatus comprising: a substrate chamber disposed on the substrate; and a drawing control system that controls drawing of the charged beam and movement of the stage;
Based on drawing time information recorded in the drawing control system, an elapsed time calculating means for calculating an elapsed time after the drawing at a position on the substrate surface;
A dimensional change calculating means for converting the elapsed time obtained by the elapsed time calculating means into a pattern dimensional change;
A heating temperature calculation means for converting the pattern dimension change amount obtained by the dimensional change amount calculation means into a heat treatment temperature;
Substrate heating means for heating the resist by setting the heat treatment temperature at a position on the substrate surface;
A charged beam drawing apparatus comprising:   2. The charged beam drawing apparatus according to claim 1, wherein the drawing time information includes information on a drawing time of the charged beam and a moving time of the stage.   The elapsed time calculating means divides a position on the substrate surface into blocks according to a drawing stripe or drawing frame for dividing drawing pattern data, and assigns the elapsed time after the drawing to each block. 3. The charged beam drawing apparatus according to 2.   4. The charged beam drawing apparatus according to claim 1, wherein the dimensional change amount calculation means is performed based on a temporal change characteristic of a drawing pattern dimension of the resist.   5. The charged beam drawing apparatus according to claim 1, wherein the heating temperature calculation unit performs based on a temperature characteristic of a drawing pattern dimension change in the resist heating process. 6. A step of generating a drawing time information by recording a drawing time of the charged beam and a moving time of the substrate when drawing a pattern on a resist on the substrate;
A step of calculating an elapsed time after the drawing at a position on the substrate surface based on the drawing time information;
Converting an elapsed time at a position on the substrate surface into a pattern dimension change amount;
Converting the pattern dimensional change amount into a heat treatment temperature;
Heat-treating the resist by setting the heat treatment temperature at a position on the substrate surface;
A charged beam writing method comprising:

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