JP4725740B2 - Mems静電チャックの製造方法 - Google Patents

Mems静電チャックの製造方法 Download PDF

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Publication number
JP4725740B2
JP4725740B2 JP2006538273A JP2006538273A JP4725740B2 JP 4725740 B2 JP4725740 B2 JP 4725740B2 JP 2006538273 A JP2006538273 A JP 2006538273A JP 2006538273 A JP2006538273 A JP 2006538273A JP 4725740 B2 JP4725740 B2 JP 4725740B2
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Japan
Prior art keywords
electrically conductive
conductive layer
forming
layer
substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006538273A
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English (en)
Japanese (ja)
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JP2007510310A5 (https=
JP2007510310A (ja
Inventor
ペーター ケラーマン
シュー クイン
エルニー アレン
ダグラス ブラウン
Original Assignee
アクセリス テクノロジーズ インコーポレーテッド
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Publication of JP2007510310A5 publication Critical patent/JP2007510310A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Jigs For Machine Tools (AREA)
JP2006538273A 2003-10-28 2004-10-28 Mems静電チャックの製造方法 Expired - Fee Related JP4725740B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/695,153 2003-10-28
US10/695,153 US6946403B2 (en) 2003-10-28 2003-10-28 Method of making a MEMS electrostatic chuck
PCT/US2004/035891 WO2005045921A1 (en) 2003-10-28 2004-10-28 Method of making a mems electrostatic chuck

Publications (3)

Publication Number Publication Date
JP2007510310A JP2007510310A (ja) 2007-04-19
JP2007510310A5 JP2007510310A5 (https=) 2007-12-06
JP4725740B2 true JP4725740B2 (ja) 2011-07-13

Family

ID=34549968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006538273A Expired - Fee Related JP4725740B2 (ja) 2003-10-28 2004-10-28 Mems静電チャックの製造方法

Country Status (8)

Country Link
US (1) US6946403B2 (https=)
EP (1) EP1678752B1 (https=)
JP (1) JP4725740B2 (https=)
KR (1) KR20060092245A (https=)
CN (1) CN100524683C (https=)
DE (1) DE602004006639T2 (https=)
TW (1) TWI360856B (https=)
WO (1) WO2005045921A1 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7072166B2 (en) * 2003-09-12 2006-07-04 Axcelis Technologies, Inc. Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage
KR100666039B1 (ko) * 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
US7457097B2 (en) * 2004-07-27 2008-11-25 International Business Machines Corporation Pressure assisted wafer holding apparatus and control method
US20070081880A1 (en) * 2005-09-29 2007-04-12 Riordon Benjamin B Wafer-handling method, system, and apparatus
US8226769B2 (en) * 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
AU2007285483B2 (en) 2006-05-11 2011-12-22 Regenics As Administration of cells and cellular extracts for rejuvenation
WO2008051369A2 (en) * 2006-10-25 2008-05-02 Axcelis Technologies, Inc. Low-cost electrostatic clamp with fast declamp time and the manufacture
US20090115060A1 (en) * 2007-11-01 2009-05-07 Infineon Technologies Ag Integrated circuit device and method
CA2723848C (en) 2008-05-09 2013-01-08 Regenics As Method of making salmon egg cytoplasmic extracts and use for increasing collagen production in skin
DE102008054982A1 (de) * 2008-12-19 2010-07-01 Carl Zeiss Smt Ag Wafer-Chuck für die EUV-Lithographie
US7932570B1 (en) * 2009-11-09 2011-04-26 Honeywell International Inc. Silicon tab edge mount for a wafer level package
US9330952B2 (en) 2009-12-30 2016-05-03 Solexel, Inc. Bipolar mobile electrostatic carriers for wafer processing
AU2011249478B2 (en) 2010-05-06 2014-12-04 Regenics As Use of cellular extracts for skin rejuvenation
CN103222043B (zh) * 2010-09-08 2016-10-12 恩特格林斯公司 一种高传导静电夹盘
US10242890B2 (en) * 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
NL2009874A (en) 2011-12-23 2013-06-26 Asml Netherlands Bv Support, lithographic apparatus and device manufacturing method.
JP6359236B2 (ja) * 2012-05-07 2018-07-18 トーカロ株式会社 静電チャック
WO2014008110A1 (en) * 2012-07-06 2014-01-09 LuxVue Technology Corporation Compliant bipolar micro device transfer head with silicon electrodes
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
JP5441021B1 (ja) * 2012-09-12 2014-03-12 Toto株式会社 静電チャック
EP3459522B1 (en) 2012-12-10 2021-02-17 Regenics AS Use of egg cellular extracts for wound treatment
JP6526575B2 (ja) 2013-02-07 2019-06-05 エーエスエムエル ホールディング エヌ.ブイ. リソグラフィ装置及び方法
US9878901B2 (en) 2014-04-04 2018-01-30 Analog Devices, Inc. Fabrication of tungsten MEMS structures
US20160230269A1 (en) * 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
US10381248B2 (en) 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10386821B2 (en) * 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
US20180102247A1 (en) * 2016-10-06 2018-04-12 Asm Ip Holding B.V. Substrate processing apparatus and method of manufacturing semiconductor device
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US10943808B2 (en) * 2016-11-25 2021-03-09 Applied Materials, Inc. Ceramic electrostatic chuck having a V-shape seal band
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
EP3884513A4 (en) * 2018-11-19 2022-08-03 Entegris, Inc. ELECTROSTATIC CHUCK WITH CHARGE DISCHARGE COATING
JP7350153B2 (ja) * 2020-03-04 2023-09-25 東京エレクトロン株式会社 基板処理装置および基板処理方法
US12272585B2 (en) * 2021-04-27 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer chuck structure with holes in upper surface to improve temperature uniformity
US12497697B2 (en) * 2021-10-08 2025-12-16 Applied Materials, Inc. Layer with discrete islands formed on a substrate support
KR102715367B1 (ko) * 2021-12-02 2024-10-08 세메스 주식회사 기판 지지 유닛 및 이를 포함하는 기판 처리 장치

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103367A (en) * 1987-05-06 1992-04-07 Unisearch Limited Electrostatic chuck using A.C. field excitation
JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
US5452177A (en) * 1990-06-08 1995-09-19 Varian Associates, Inc. Electrostatic wafer clamp
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5444597A (en) * 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JP3005461B2 (ja) * 1995-11-24 2000-01-31 日本電気株式会社 静電チャック
US5838529A (en) * 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
US5958813A (en) * 1996-11-26 1999-09-28 Kyocera Corporation Semi-insulating aluminum nitride sintered body
US6117246A (en) * 1997-01-31 2000-09-12 Applied Materials, Inc. Conductive polymer pad for supporting a workpiece upon a workpiece support surface of an electrostatic chuck
JPH10284583A (ja) 1997-04-04 1998-10-23 Mitsubishi Electric Corp 静電チャック除電方法及び半導体製造装置
US6138745A (en) * 1997-09-26 2000-10-31 Cvc Products, Inc. Two-stage sealing system for thermally conductive chuck
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
US6149774A (en) * 1998-06-10 2000-11-21 Delsys Pharmaceutical Corporation AC waveforms biasing for bead manipulating chucks
JP3323135B2 (ja) * 1998-08-31 2002-09-09 京セラ株式会社 静電チャック
TW432453B (en) * 1998-11-12 2001-05-01 Applied Materials Inc Apparatus for protecting a substrate support surface and method of fabricating same
US6067222A (en) * 1998-11-25 2000-05-23 Applied Materials, Inc. Substrate support apparatus and method for fabricating same
US6236555B1 (en) * 1999-04-19 2001-05-22 Applied Materials, Inc. Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP3859937B2 (ja) * 2000-06-02 2006-12-20 住友大阪セメント株式会社 静電チャック
JP2002009139A (ja) * 2000-06-20 2002-01-11 Nikon Corp 静電チャック
WO2002001611A2 (en) * 2000-06-23 2002-01-03 Applied Materials, Inc. Electrostatic chuck and method of fabricating the same

Also Published As

Publication number Publication date
DE602004006639D1 (de) 2007-07-05
KR20060092245A (ko) 2006-08-22
EP1678752A1 (en) 2006-07-12
EP1678752B1 (en) 2007-05-23
TW200518144A (en) 2005-06-01
DE602004006639T2 (de) 2008-01-31
CN100524683C (zh) 2009-08-05
US6946403B2 (en) 2005-09-20
WO2005045921A1 (en) 2005-05-19
US20050099758A1 (en) 2005-05-12
JP2007510310A (ja) 2007-04-19
CN1894788A (zh) 2007-01-10
TWI360856B (en) 2012-03-21

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