JP4717653B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP4717653B2 JP4717653B2 JP2006031538A JP2006031538A JP4717653B2 JP 4717653 B2 JP4717653 B2 JP 4717653B2 JP 2006031538 A JP2006031538 A JP 2006031538A JP 2006031538 A JP2006031538 A JP 2006031538A JP 4717653 B2 JP4717653 B2 JP 4717653B2
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- Prior art keywords
- silicide layer
- semiconductor device
- metal silicide
- etching
- forming
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 239000010410 layer Substances 0.000 claims description 176
- 238000005530 etching Methods 0.000 claims description 131
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 88
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical group [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 88
- 238000000034 method Methods 0.000 claims description 78
- 229910021332 silicide Inorganic materials 0.000 claims description 71
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 64
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
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- 239000000758 substrate Substances 0.000 description 40
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- 239000004020 conductor Substances 0.000 description 20
- 238000001312 dry etching Methods 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 5
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- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- 238000002513 implantation Methods 0.000 description 3
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- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910005881 NiSi 2 Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
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- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L29/66409—Unipolar field-effect transistors
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Description
図1〜図4は、本発明の第1の実施形態における半導体装置の製造過程を示す工程断面図である。
上記第1の実施形態では、まず、ニッケルシリサイド層7が十分な厚みを有する領域にコンタクトホール及び金属シリサイド層の凹部を形成し、その後にコンタクトホール径を拡大する手法を説明した。しかしながら、第1の実施形態のコンタクトと同様の構造は、他の手法によっても形成可能である。図5〜図7は、本発明の第2の実施形態における半導体装置の製造過程を示す工程断面図である。
上記各実施形態では、金属シリサイド層に一段の凹部を形成したが、当該凹部は、多段で構成されていてもよい。図8及び図9は、本発明の第3の実施形態における半導体装置の製造過程を示す工程断面図である。
上記各実施形態では、絶縁膜9に形成したコンタクトホール自体をマスクとしたエッチングにより金属シリサイド層に凹部を形成した。本実施形態では、コンタクトホールに代えて、マスクパターンを半導体基板上に形成することで、金属シリサイド層の凹部を形成する手法について説明する。図10〜図12は、本発明の第4の実施形態における半導体装置の製造過程を示す工程断面図である。
さて、上記各実施形態では、平坦な半導体基板1上にコンタクトを形成した。しかしながら、上記各実施形態のようなコンタクト構造では、コンタクトプラグと金属シリサイド層との接触面を曲面とした方が接触面積をより大きくすることができる。そこで、本実施形態では、コンタクト形成部位の半導体基板表面に凹曲面を形成している。図13〜図15は、本発明における第5の実施形態における半導体装置の製造過程を示す工程断面図である。
第5の実施形態では、シリサイド化を行う前に、半導体基板表面に凹曲面を形成したが、シリサイド化を行った後であっても、凹曲面を形成することは可能である。図16は、本発明の第6の実施形態における半導体装置の製造過程を示す工程断面図である。
2 ゲート絶縁膜
3 ゲート電極
4 低濃度不純物拡散領域
5 サイドウォールスペーサ
6 高濃度不純物拡散領域
7 ニッケルシリサイド層
8 ストッパ膜
9 絶縁膜
10、20、30、40、50、60 フォトレジスト
11、21、31、41、51、61 コンタクトホール
12、22、32、42、52、62 凹部
15 導電体(コンタクトプラグ)
24 スペーサ
44 第2のサイドウォール
53 凹曲面
Claims (20)
- 半導体層の表面部に形成された不純物拡散領域と、前記不純物拡散領域の表面に形成された金属シリサイド層と、前記金属シリサイド層上に形成されたストッパ膜および前記ストッパ膜上に形成された層間絶縁膜を貫通して前記金属シリサイド層に電気的に接続するコンタクトプラグとを備え、
前記金属シリサイド層は、当該金属シリサイド層の表面から掘り込まれ、かつ当該金属シリサイド層のみが表面に露出する凹部を有し、
前記コンタクトプラグは、前記凹部に埋め込まれるとともに、前記凹部の表面および当該凹部を取り囲む前記金属シリサイド層の表面と接触する接触面を有していることを特徴とする半導体装置。 - 前記凹部が多段構造を有する請求項1記載の半導体装置。
- 前記半導体層の主成分がシリコンである請求項1記載の半導体装置。
- 前記層間絶縁膜が、シリコン酸化膜、ボロン・リンドープシリコン酸化膜、またはリンドープシリコン酸化膜である請求項1記載の半導体装置。
- 前記ストッパ膜が、シリコン窒化膜、または炭化シリコン膜である請求項1記載の半導体装置。
- 前記金属シリサイド層がニッケルシリサイドである請求項3記載の半導体装置。
- 金属シリサイド層を介して半導体層表面部の不純物拡散領域に電気的に接続されるコンタクトプラグを備えた半導体装置の製造方法において、
半導体層の表面部に不純物拡散領域を形成する工程と、
前記不純物拡散領域の表面部に金属シリサイド層を形成する工程と、
前記金属シリサイド層が形成された半導体層上にストッパ膜を形成する工程と、
前記ストッパ膜上に、層間絶縁膜を形成する工程と、
前記層間絶縁膜上に、コンタクトプラグ形成位置に開口を有するマスクパターンを形成する工程と、
前記マスクパターンを介したエッチングにより、前記層間絶縁膜および前記ストッパ膜に貫通孔を形成する工程と、
前記貫通孔を介したエッチングにより、前記金属シリサイド層のみが表面に露出する凹部を形成する工程と、
前記貫通孔の径を拡大する工程と、
前記径が拡大された貫通孔の底部に露出した前記ストッパ膜を除去し、前記凹部を取り囲む金属シリサイド層の表面を露出する工程と、
前記凹部および当該凹部を取り囲む金属シリサイド層の表面が底部に露出した貫通孔に導電体を充填しコンタクトプラグを形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記貫通孔を形成するエッチングの際に前記凹部が形成される請求項7記載の半導体装置の製造方法。
- 前記貫通孔を形成する工程は、当該貫通孔の内壁にスペーサを形成する工程をさらに有し、
前記貫通孔の径を拡大する工程は、前記スペーサを除去する工程を有する請求項7記載の半導体装置の製造方法。 - 前記凹部を形成する工程と、前記貫通孔の径を拡大する工程と、前記凹部を取り囲む金属シリサイド層の表面を露出する工程の一連の工程が繰り返して行われ、前記金属シリサイド層に多段構造が形成される請求項7記載の半導体装置の製造方法。
- 前記金属シリサイド層を形成する工程と前記ストッパ膜を形成する工程との間に、前記貫通孔底部の径を規制するパターンを形成する工程をさらに有し、
前記凹部を形成する工程において、前記規制パターンを介したエッチングにより前記凹部が形成され、
前記貫通孔の径を拡大する工程において、前記規制パターンを除去することにより前記貫通孔径が拡大される請求項7記載の半導体装置の製造方法。 - 前記規制パターンが、前記貫通孔に隣接するゲート電極に形成されたサイドウォールである請求項11記載の半導体装置の製造方法。
- 前記不純物拡散領域を形成する工程と、前記金属シリサイド層を形成する工程との間に、前記半導体層の等方性エッチングを行うことにより、当該半導体層表面の前記コンタクトプラグの接触面を含む領域に凹曲面を形成する工程をさらに有する請求項7記載の半導体装置の製造方法。
- 前記凹曲面を形成する工程において、前記等方性エッチングが、前記貫通孔に隣接するゲート電極に形成されたサイドウォールをマスクとして行われる請求項13記載の半導体装置の製造方法。
- 前記凹部を取り囲む金属シリサイド層の表面を露出する工程と前記コンタクトプラグを形成する工程との間に、前記拡大された貫通孔を介した等方性エッチングにより前記金属シリサイド層の一部を除去する工程をさらに有する請求項7記載の半導体装置の製造方法。
- 前記等方性エッチングがウェットエッチングである請求項13または15記載の半導体装置の製造方法。
- 前記半導体層の主成分がシリコンである請求項7記載の半導体装置の製造方法。
- 前記層間絶縁膜が、シリコン酸化膜、ボロン・リンドープシリコン酸化膜、または、リンドープシリコン酸化膜である請求項7記載の半導体装置の製造方法。
- 前記ストッパ膜が、シリコン窒化膜、または炭化シリコン膜である請求項7記載の半導体装置の製造方法。
- 前記金属シリサイド層は、ニッケルシリサイドである請求項17記載の半導体装置の製造方法。
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KR1020070008262A KR20070080819A (ko) | 2006-02-08 | 2007-01-26 | 반도체장치 및 반도체장치의 제조방법 |
US11/703,671 US20070181954A1 (en) | 2006-02-08 | 2007-02-08 | Semiconductor device and method of manufacture thereof |
CNA2007100070818A CN101017807A (zh) | 2006-02-08 | 2007-02-08 | 半导体装置和半导体装置的制造方法 |
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DE102010031197A1 (de) * | 2010-07-09 | 2012-01-12 | Robert Bosch Gmbh | Piezoresistiver Drucksensor |
JP5696543B2 (ja) * | 2011-03-17 | 2015-04-08 | セイコーエプソン株式会社 | 半導体基板の製造方法 |
US8569127B2 (en) * | 2012-03-13 | 2013-10-29 | United Microelectronics Corp. | Semiconductor device and method for fabricating the same |
US9236345B2 (en) * | 2014-03-24 | 2016-01-12 | Globalfoundries Inc. | Oxide mediated epitaxial nickel disilicide alloy contact formation |
US20170194454A1 (en) * | 2016-01-06 | 2017-07-06 | International Business Machines Corporation | NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE |
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EP3920212A1 (en) * | 2016-12-30 | 2021-12-08 | INTEL Corporation | Contact architecture for capacitance reduction and satisfactory contact resistance |
US10199260B1 (en) * | 2017-10-05 | 2019-02-05 | United Microelectronics Corp. | Contact hole structure and method of fabricating the same |
US11380781B2 (en) * | 2019-12-17 | 2022-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contact and via structures for semiconductor devices |
US11637018B2 (en) * | 2020-10-27 | 2023-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Barrier layer for contact structures of semiconductor devices |
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