JP4715822B2 - Method for manufacturing thin film pattern substrate - Google Patents

Description

The present invention relates to a method of manufacturing a thin film pattern substrate on which a thin film pattern of a predetermined shape such as a wiring or an element is formed.

  As a method of forming a thin film pattern such as a wiring used in an electronic circuit or an integrated circuit, for example, a photolithography method is used. This photolithography method requires large-scale equipment such as a vacuum apparatus and a complicated process, and the material use efficiency is about several percent, and most of it must be discarded, and the manufacturing cost is high.

On the other hand, for example, as disclosed in Patent Document 1, a thin film pattern is formed on a substrate using a so-called inkjet method, which is a droplet discharge method in which a liquid material is discharged from a liquid discharge head in the form of droplets. A method has been proposed (see Patent Document 1). In this method, a liquid material (functional liquid) for a thin film pattern is discharged to a concave area (liquid receiving part) in a liquid repellent bank (diffusion prevention pattern) provided on the substrate, and then heat treatment or laser irradiation. And drying to form a thin film pattern. According to this method, there is an advantage that photolithography is not required, the process is greatly simplified, and the amount of raw materials used can be reduced.
JP 59-75205 A

  However, in recent years, the density of circuits constituting the device has been increased, and for example, further miniaturization and thinning of wiring are required. In the thin film pattern forming method using the droplet discharge method described above, the wiring pattern having a line width narrower than the landing diameter is obtained by wetting and spreading the functional liquid landed on the liquid injection part to the liquid flow part having a narrow line width. In this case, if the amount of the functional liquid that can be injected into the liquid injection portion (maximum injection amount) is large, the amount of the functional liquid that flows into the liquid flow portion can be increased. ) Can form a wiring pattern having a required film thickness. However, if the maximum injection volume of the liquid injection part is small, the functional liquid must be injected multiple times in the same liquid injection part, and the injection and wetting spread must be repeated several times. The higher the rate, the lower the production efficiency of the substrate on which a thin film pattern such as wiring was formed. In order to form a finer wiring pattern, it is necessary to make the spread of the droplets uniform so that the film thickness becomes more uniform. However, when the ejected droplet spreads on the substrate after landing, the film thickness may not be formed uniformly due to the non-uniform evaporation rate of the functional liquid due to the flow of the droplet and the variation of the landing position. It was.

  In particular, when the film thickness is not uniform as described above, the formed film is uneven, and it is difficult to stably form a fine thin film pattern. Then, by forming irregularities on the formed film, in a device having a laminated structure obtained by further laminating films, a fine thin film pattern is formed while ensuring the stability of quality such as disconnection or short circuit. It was difficult.

  An object of the present invention is to provide a thin film pattern forming substrate, a device manufacturing method, an electro-optical device, and an electronic apparatus, which can form a thin linear thin film pattern with high accuracy and stability.

The method for producing a thin film pattern substrate of the present invention is a method for producing a thin film pattern substrate in which a thin film pattern is formed in a region recessed in the substrate, the widened portion having a relatively wide width, and a functional liquid from the widened portion. A step of forming the recessed region provided with a linear portion disposed so as to flow in, a step of injecting the functional liquid into the widened portion, and a drying of the functional liquid that has flowed into the linear portion. Forming a thin film pattern, and in the recessed region, the average diameter of the line width of the widened portion is larger than the diameter of the droplet of the functional liquid disposed in the widened portion, It is characterized by being formed so as to be not more than twice the line width of the linear part.
The thin film pattern substrate of the present invention is a thin film pattern substrate in which a thin film pattern is formed in a region recessed in the substrate, and the recessed region has a widened portion formed relatively wide, A linear portion connected to the widened portion, the average diameter of the widened portion is set to be twice or less the line width of the linear portion, the widened portion before the thin film pattern is dried A liquid injection part into which a functional liquid as a material is injected, and the linear part is a linear liquid flow part connected to the liquid injection part so that the functional liquid injected into the liquid injection part can flow in The average diameter of the widened portion is larger than the diameter of the droplet of the functional liquid disposed in the widened portion.

  According to the present invention, the recessed region includes a widened portion having a relatively wide width and a linear portion connected to the widened portion, and an average diameter of the widened portion is the line. Because the functional liquid injected into the widened part flows into the linear part, the pressure due to the surface tension of the functional liquid injected into the widened part, The pressure due to the surface tension of the functional liquid flowing into the part is balanced in a steady state. Since the line width is twice or less, the contact angle of the widened portion becomes larger than the contact angle of the linear portion, and the maximum liquid injection amount of the widened portion increases. Moreover, the liquid surface height of the widened portion after the functional liquid injection and the liquid surface height of the linear portion are within twice, and the difference in film thickness when dried into a thin film is within an allowable range. Since a thin film pattern with few irregularities can be formed, uniformity of film thickness can be maintained. Therefore, since a thin film pattern with few disconnections can be formed, a device with stable quality can be provided.

  In the thin film pattern substrate of the present invention, the widened portion has a substantially isotropic shape having substantially the same diameter in different directions, and the diameter of the widened portion is set to be not more than twice the line width of the linear portion. It is desirable.

  According to this invention, the pressure due to the surface tension of the functional liquid injected into the widened portion and the pressure due to the surface tension of the functional liquid flowing into the linear portion are substantially balanced in a steady state. Since the line width is twice or less, the contact angle of the widened portion becomes larger than the contact angle of the linear portion, and the maximum liquid injection amount of the widened portion increases. Moreover, the liquid surface height of the widened portion after the functional liquid injection and the liquid surface height of the linear portion are within twice, and the difference in film thickness when dried into a thin film is within an allowable range. A thin film pattern with few irregularities can be formed.

  In the thin film pattern substrate of the present invention, the widened portion has an anisotropic shape with different diameters in different directions, and the average diameter of the widened portion is set to be twice or less the line width of the linear portion. It is desirable.

  According to this invention, even if the widened portion becomes anisotropic, the pressure due to the surface tension of the functional liquid injected into the widened portion and the pressure due to the surface tension of the functional liquid flowing into the linear portion are in a steady state. It will be almost balanced. Since the line width is twice or less, the contact angle of the widened portion becomes larger than the contact angle of the linear portion, and the maximum liquid injection amount of the widened portion increases. Moreover, the liquid surface height of the widened portion after the functional liquid injection and the liquid surface height of the linear portion are within twice, and the difference in film thickness when dried into a thin film is within an allowable range. A thin film pattern with few irregularities can be formed.

  In the thin film pattern substrate of the present invention, it is desirable that the substantially isotropic shape of the widened portion is a substantially circular shape.

  According to the present invention, even if the shape of the widened portion becomes substantially circular, the pressure due to the surface tension of the functional liquid injected into the widened portion and the pressure due to the surface tension of the functional liquid flowing into the linear portion are steady. It will be almost balanced by the state. Since the line width is twice or less, the contact angle of the widened portion becomes larger than the contact angle of the linear portion, and the maximum liquid injection amount of the widened portion increases. Moreover, the liquid surface height of the widened portion after the functional liquid injection and the liquid surface height of the linear portion are within twice, and the difference in film thickness when dried into a thin film is within an allowable range. A thin film pattern with few irregularities can be formed. Moreover, since the functional liquid can be brought close to the maximum diameter, the discharge amount of the functional liquid can be increased, so that the production efficiency is improved.

  In the thin film pattern substrate of the present invention, the anisotropic shape of the widened portion is an elliptical shape, and the harmonic average of the major axis and the minor axis of the widened portion is set to be twice or less the line width of the linear portion. It is desirable.

  According to the present invention, even when the widened portion has an elliptical shape, the pressure due to the surface tension of the functional liquid injected into the widened portion and the pressure due to the surface tension of the functional liquid flowing into the linear portion are substantially constant. Will be balanced. Since the line width is twice or less, the contact angle of the widened portion becomes larger than the contact angle of the linear portion, and the maximum liquid injection amount of the widened portion increases. Moreover, the liquid surface height of the widened portion after the functional liquid injection and the liquid surface height of the linear portion are within twice, and the difference in film thickness when dried into a thin film is within an allowable range. A thin film pattern with few irregularities can be formed. In addition, even if the landing position of the functional liquid is slightly deviated, the widening portion has an elliptical shape, so that the functional liquid can land efficiently.

  In the thin film pattern substrate of the present invention, the widened portion is a liquid injection portion into which a functional liquid that is a material before drying of the thin film pattern is injected, and the linear portion is the function injected into the liquid injection portion. It is a linear liquid flow part connected to the liquid injection part so that the liquid can flow in.

  According to this invention, the pressure due to the surface tension of the functional liquid injected into the widened portion and the pressure due to the surface tension of the functional liquid flowing into the linear portion are substantially balanced in a steady state. Since the line width is twice or less, the contact angle of the widened portion becomes larger than the contact angle of the linear portion, and the maximum liquid injection amount of the widened portion increases. Moreover, the liquid surface height of the widened portion after the functional liquid injection and the liquid surface height of the linear portion are within twice, and the difference in film thickness when dried into a thin film is within an allowable range. A thin film pattern with few irregularities can be formed. And since it is connected with the linear liquid flow part, the functional liquid inject | poured into the liquid injection | pouring part becomes easy to flow into a liquid flow part.

  In the thin film pattern substrate of the present invention, it is preferable that a bank portion is formed on the substrate, and an inner side of the bank portion is the recessed region.

  According to this invention, since the inner side of the bank part is formed in the recessed area, the functional liquid can flow more easily.

  In the thin film pattern substrate of the present invention, it is desirable that the inside of the recessed region is a lyophilic portion.

  According to the present invention, the functional liquid injected into the widened portion flows through the lyophilic portion surrounded by the bank portion, so that the functional liquid easily flows into the linear portion. Therefore, a uniform thin film pattern with fewer irregularities can be formed.

  In the thin film pattern substrate of the present invention, it is desirable that the functional liquid is injected into the widened portion by an ink jet method.

  According to this invention, since the droplet diameter until the functional liquid flies and lands on the substrate can be controlled more finely, it is possible to form a finer and more uniform thin film pattern by reducing the functional liquid to be discharged. .

  In the thin film pattern substrate of the present invention, the thin film pattern is preferably a conductive pattern.

  According to the present invention, a fine thin film pattern having conductivity can be formed.

  The device manufacturing method of the present invention is a manufacturing method for manufacturing a device by forming a thin film pattern on a substrate surface, and a step of forming a widened portion, and a connection is made so that a functional liquid flows in the widened portion. Forming the linear portion, the step of injecting the functional liquid into the widened portion, the step of flowing the functional liquid from the widened portion into the linear portion, and the flow into the linear portion A drying step of drying the functional liquid to form a thin film pattern, wherein an average diameter of the line width of the widened portion is set to be not more than twice the line width of the linear portion.

  According to this invention, the pressure due to the surface tension of the functional liquid injected into the widened portion and the pressure due to the surface tension of the functional liquid flowing into the linear portion are substantially balanced in a steady state. Since the line width is twice or less, the contact angle of the widened portion becomes larger than the contact angle of the linear portion, and the maximum liquid injection amount of the widened portion increases. Moreover, the liquid surface height of the widened portion after the functional liquid injection and the liquid surface height of the linear portion are within twice, and the difference in film thickness when dried into a thin film is within an allowable range. A thin film pattern with few irregularities can be formed. Since the liquid flows from the widened portion to the linear portion, a thin film pattern having a uniform film thickness with few irregularities can be formed. Therefore, there can be obtained a device having a more refined thin film pattern with fewer quality problems such as disconnection and short circuit.

    The electro-optical device according to the present invention includes a device having a thin film pattern substrate.

  According to the present invention, since the device is further miniaturized, it is possible to provide an electro-optical device that can be miniaturized with higher accuracy.

  An electronic apparatus according to the present invention includes the above-described electro-optical device.

  According to the present invention, since the electro-optical device that can be miniaturized with higher accuracy is provided, a higher-accuracy electronic device can be provided.

  Embodiments of a thin film pattern forming method and a device manufacturing method according to the present invention will be described below in detail with reference to the accompanying drawings. In the present embodiment, ink (functional liquid) containing conductive fine particles (ink for forming a wiring pattern (thin film pattern)) is ejected in the form of droplets from a discharge nozzle of a droplet discharge head by a droplet discharge method, and is applied onto a substrate. A description will be given using an example in which a wiring pattern formed of a conductive film is formed.

(First embodiment)
First, the ink (functional liquid) to be used will be described. The wiring pattern forming ink, which is a liquid material, is made of a dispersion liquid in which conductive fine particles are dispersed in a dispersion medium. In the present embodiment, as the conductive fine particles, for example, metal oxides containing at least one of gold, silver, copper, aluminum, palladium, and nickel, these oxides, conductive polymers, Superconductor fine particles are used. These conductive fine particles can be used by coating the surface with an organic substance or the like in order to improve dispersibility. The particle diameter of the conductive fine particles is preferably 1 nm or more and 1.0 μm or less. If it is larger than 1.0 μm, clogging may occur in the discharge nozzle of the droplet discharge head 1 described later. On the other hand, if the thickness is smaller than 1 nm, the volume ratio of the coating agent to the conductive fine particles is increased, and the ratio of organic substances in the obtained film becomes excessive.

  The dispersion medium is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. For example, in addition to water, alcohols such as methanol, ethanol, propanol, butanol, n-heptane, n-octane, decane, dodecane, tetradecane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydro Hydrocarbon compounds such as naphthalene and cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2- Methoxyethyl) ether, ether compounds such as p-dioxane, propylene carbonate, γ- Butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, can be exemplified polar compounds such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferable and more preferable dispersion media in terms of fine particle dispersibility, dispersion stability, and ease of application to the droplet discharge method. Examples thereof include water and hydrocarbon compounds.

  The surface tension of the conductive fine particle dispersion is preferably in the range of 0.02 N / m to 0.07 N / m. When ink is ejected by the droplet ejection method, if the surface tension is less than 0.02 N / m, the wettability of the ink with respect to the nozzle surface increases, and thus flight bending tends to occur, and if the surface tension exceeds 0.07 N / m. Since the shape of the meniscus at the nozzle tip is not stable, it becomes difficult to control the discharge amount and the discharge timing. In order to adjust the surface tension, a small amount of a surface tension regulator such as a fluorine-based, silicone-based, or nonionic-based material may be added to the dispersion within a range that does not significantly reduce the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the ink to the substrate, improves the leveling property of the film, and helps prevent the occurrence of fine irregularities on the film. The surface tension modifier may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The viscosity of the dispersion is preferably 1 mPa · s to 50 mPa · s. When ejecting ink as droplets using the droplet ejection method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of the ink, and if the viscosity is greater than 50 mPa · s, the nozzle The frequency of clogging in the holes increases, and it becomes difficult to smoothly discharge droplets.

  Various substrates such as glass, quartz glass, Si wafer, plastic film, metal plate, and ceramic can be used as the substrate on which the wiring pattern is formed. In addition, a substrate in which a semiconductor film, a metal film, a dielectric film, an organic film, an insulating film or the like is formed as a base layer on the surface of these various material substrates is also included.

Here, examples of the discharge technique of the droplet discharge method include a charge control method, a pressure vibration method, an electromechanical conversion method, an electrothermal conversion method, and an electrostatic suction method. In the charge control method, a charge is applied to a material with a charging electrode, and the flight direction of the material is controlled with a deflection electrode to be discharged from a discharge nozzle. In addition, the pressure vibration method is a method in which an ultra-high pressure of about 30 kg / cm ² is applied to the material to discharge the material to the nozzle tip side, and when the control voltage is not applied, the material moves straight from the discharge nozzle. When discharged and a control voltage is applied, electrostatic repulsion occurs between the materials, and the materials are scattered and are not discharged from the discharge nozzle. The electromechanical conversion method utilizes the property that a piezoelectric element (piezoelectric element) is deformed by receiving a pulse-like electric signal. The piezoelectric element is deformed through a flexible substance in a space where material is stored. Pressure is applied, and the material is extruded from this space and discharged from the discharge nozzle.

  In the electrothermal conversion method, a material is rapidly vaporized by a heater provided in a space in which the material is stored to generate bubbles, and the material in the space is discharged by the pressure of the bubbles. In the electrostatic attraction method, a minute pressure is applied to a space in which a material is stored, a meniscus of material is formed on the discharge nozzle, and an electrostatic attractive force is applied in this state before the material is drawn out. In addition to this, techniques such as a system that uses a change in the viscosity of a fluid due to an electric field and a system that uses a discharge spark are also applicable. The droplet discharge method has an advantage that the use of the material is less wasteful and a desired amount of the material can be accurately disposed at a desired position. In addition, the amount of one drop of the liquid material discharged by the droplet discharge method is 1 to 300 nanograms, for example.

  Next, a device manufacturing apparatus used when manufacturing a device according to the present invention will be described. As this device manufacturing apparatus, a droplet discharge apparatus (inkjet apparatus) IJ that manufactures a device by discharging (dropping) droplets from a droplet discharge head 1 onto a substrate is used.

  FIG. 1 is a perspective view showing a schematic configuration of the droplet discharge device IJ.

  In FIG. 1, a droplet discharge device IJ includes a droplet discharge head 1, an X-axis direction drive shaft 4, a Y-axis direction guide shaft 5, a control device CONT, a stage 7, a cleaning mechanism 8, and a base. 9 and a heater 15.

  The stage 7 supports the substrate P on which ink is placed by the droplet discharge device IJ, and includes a fixing mechanism (not shown) that fixes the substrate P at a reference position.

  The droplet discharge head 1 is a multi-nozzle type droplet discharge head having a plurality of discharge nozzles, and the longitudinal direction and the X-axis direction coincide with each other. The plurality of ejection nozzles are provided on the lower surface of the droplet ejection head 1 at regular intervals along the X-axis direction. From the ejection nozzle of the droplet ejection head 1, the ink containing the conductive fine particles described above is ejected onto the substrate P supported by the stage 7.

  An X-axis direction drive motor 2 is connected to the X-axis direction drive shaft 4. The X-axis direction drive motor 2 is a stepping motor or the like, and rotates the X-axis direction drive shaft 4 when a drive signal in the X-axis direction is supplied from the control device CONT. When the X-axis direction drive shaft 4 rotates, the droplet discharge head 1 moves in the X-axis direction.

  The Y-axis direction guide shaft 5 is fixed so as not to move with respect to the base 9. The stage 7 includes a Y-axis direction drive motor 3. The Y-axis direction drive motor 3 is a stepping motor or the like, and moves the stage 7 in the Y-axis direction when a drive signal in the Y-axis direction is supplied from the control device CONT.

  The control device CONT supplies the droplet discharge head 1 with a voltage for controlling droplet discharge. Further, the control device CONT supplies a drive pulse signal for controlling the movement of the droplet discharge head 1 in the X-axis direction to the X-axis direction drive motor 2, and the stage 7 to the Y-axis direction drive motor 3. A drive pulse signal for controlling the movement in the Y-axis direction is supplied.

  The cleaning mechanism 8 is for cleaning the droplet discharge head 1 and includes a Y-axis direction drive motor (not shown). By driving the Y-axis direction drive motor, the cleaning mechanism 8 moves along the Y-axis direction guide shaft 5. The movement of the cleaning mechanism 8 is also controlled by the control device CONT.

  Here, the heater 15 is means for heat-treating the substrate P by lamp annealing, and evaporates and dries the solvent contained in the ink applied on the substrate P. The heater 15 is also turned on and off by the control device CONT.

  The droplet discharge device IJ discharges droplets onto the substrate P while relatively scanning the droplet discharge head 1 and the stage 7 that supports the substrate P. Here, in the following description, the Y-axis direction is a scanning direction, and the X-axis direction orthogonal to the Y-axis direction is a non-scanning direction. Therefore, the discharge nozzles of the droplet discharge head 1 are provided at regular intervals in the X-axis direction, which is the non-scanning direction. In FIG. 1, the droplet discharge head 1 is arranged at a right angle to the traveling direction of the substrate P, but the angle of the droplet discharging head 1 is adjusted so as to intersect the traveling direction of the substrate P. It may be. In this way, the pitch between the nozzles can be adjusted by adjusting the angle of the droplet discharge head 1. Further, the distance between the substrate P and the nozzle surface may be arbitrarily adjustable.

  FIG. 2 is a diagram for explaining the principle of discharging a liquid material by a piezo method.

  In FIG. 2, a piezo element 22 is installed adjacent to a liquid chamber 21 that stores a liquid material (ink for forming a wiring pattern, functional liquid). The liquid material is supplied to the liquid chamber 21 via a liquid material supply system 23 including a material tank that stores the liquid material. The piezo element 22 is connected to a drive circuit 24, and a voltage is applied to the piezo element 22 through the drive circuit 24 to deform the piezo element 22, whereby the liquid chamber 21 is deformed and liquid is discharged from the discharge nozzle 25. Material is dispensed. In this case, the amount of distortion of the piezo element 22 is controlled by changing the value of the applied voltage. Further, the strain rate of the piezo element 22 is controlled by changing the frequency of the applied voltage. Since the droplet discharge by the piezo method does not apply heat to the material, it has an advantage of hardly affecting the composition of the material.

  Next, an embodiment of a method for forming a wiring pattern according to the present invention will be described with reference to FIGS. 3, 4, 5, and 6. FIG.

  FIG. 3 is a flowchart showing an example of a wiring pattern forming method according to the present embodiment, FIGS. 4 and 5 are schematic views showing a forming procedure, and FIG. 6 is a conceptual diagram of the thin film pattern forming method.

  As shown in FIG. 3, the wiring pattern forming method according to the present embodiment is to dispose the above-described wiring pattern forming ink on a substrate and form a conductive film wiring pattern on the substrate. A bank forming step S1 for projecting a bank corresponding to the wiring pattern, a lyophilic treatment step S2 for imparting lyophilicity to the substrate, a lyophobic treatment step S3 for imparting liquid repellency to the bank, and a liquid repellency The material placement step S4 for placing the ink between the banks to which the ink is applied, the intermediate drying step S5 for removing at least a part of the liquid component of the ink, and the firing step S6. Hereinafter, each process will be described in detail. In this embodiment, a glass substrate is used as the substrate P.

<Bank formation process>
First, a HMDS process is performed on the substrate P as a surface modification process before applying the organic material. The HMDS treatment is a method in which hexamethyldisilazane ((CH ₃ ) ₃ SiNHSi (CH ₃ ) ₃ ) is applied in a vapor state. As a result, as shown in FIG. 4A, the HMDS layer 32 as an adhesion layer that improves the adhesion between the bank and the substrate P is formed on the substrate P.

  The bank is a member that functions as a partition member, and the bank can be formed by an arbitrary method such as a photolithography method or a printing method. For example, when using a photolithography method, an organic photosensitive material is formed on the HMDS layer 32 of the substrate P according to the height of the bank by a predetermined method such as spin coating, spray coating, roll coating, die coating, dip coating, etc. 31 is applied, and a resist layer is applied thereon. Then, a mask is applied according to the bank shape (wiring pattern), and the resist is exposed and developed to leave the resist according to the bank shape. Finally, the bank material other than the mask is removed by etching. Moreover, you may form a bank (convex part) by two or more layers by which the lower layer was comprised by the inorganic substance and the upper layer was comprised by the organic substance. As a result, as shown in FIG. 4B, banks B and B are provided so as to surround the periphery of the wiring pattern formation scheduled region. The banks B and B formed in this manner are tapered so that the width on the top side is narrow and the width on the bottom side is wide. Is preferable because it easily flows.

  The organic material for forming the bank may be a material that exhibits liquid repellency with respect to ink, or, as will be described later, it can be lyophobic (fluorinated) by plasma treatment and has good adhesion to the base substrate. An insulating organic material that can be easily patterned by the above method may be used. For example, a polymer material such as an acrylic resin, a polyimide resin, an olefin resin, a phenol resin, or a melamine resin can be used. Alternatively, a material having an inorganic skeleton (siloxane bond) and an organic group in the main chain may be used.

  When the banks B and B are formed on the substrate P, hydrofluoric acid treatment is performed. The hydrofluoric acid process is a process of removing the HMDS layer 32 between the banks B and B by etching with, for example, a 2.5% hydrofluoric acid aqueous solution. In the hydrofluoric acid treatment, the banks B and B function as a mask, and as shown in FIG. 4C, the HMDS layer 32 that is an organic substance at the bottom 35 of the groove 34 formed between the banks B and B is removed. The substrate P is exposed.

<Liquid treatment process>
Next, a lyophilic process step for imparting lyophilicity to the bottom portion 35 (exposed portion of the substrate P) between the banks B and B is performed. As the lyophilic treatment step, ultraviolet (UV) irradiation treatment for irradiating ultraviolet rays, O ₂ plasma treatment using oxygen as a processing gas in the air atmosphere, or the like can be selected. Here, O ₂ plasma treatment is performed.

In the O ₂ plasma treatment, the substrate P is irradiated with plasma oxygen from the plasma discharge electrode. As an example of the conditions for the O ₂ plasma treatment, for example, the plasma power is 50 to 1000 W, the oxygen gas flow rate is 50 to 100 mL / min, the relative moving speed of the substrate 1 with respect to the plasma discharge electrode is 0.5 to 10 mm / sec, and the substrate temperature is 70-90 ° C.

When the substrate P is a glass substrate, its surface has the lyophilic property to the wiring pattern forming ink, by performing the O ₂ plasma treatment or UV irradiation treatment as in this embodiment, The lyophilicity of the substrate P surface (bottom 35) exposed between the banks B and B can be further enhanced. Here, it is preferable that the O ₂ plasma treatment or the ultraviolet irradiation treatment is performed so that the contact angle of the bottom portion 35 between the banks with respect to the ink is 15 degrees or less.

FIG. 9 is a schematic configuration diagram showing an example of a plasma processing apparatus used when performing O ₂ plasma processing. The plasma processing apparatus shown in FIG. 9 has an electrode 42 connected to an AC power supply 41 and a sample table 40 that is a ground electrode. The sample table 40 is movable in the Y-axis direction while supporting the substrate P as a sample. On the lower surface of the electrode 42, two parallel discharge generating portions 44, 44 extending in the X-axis direction orthogonal to the moving direction are projected, and the dielectric member 45 surrounds the discharge generating portion 44. Is provided. The dielectric member 45 prevents abnormal discharge of the discharge generation part 44. The lower surface of the electrode 42 including the dielectric member 45 is substantially planar, and a slight space (discharge gap) is formed between the discharge generating portion 44 and the dielectric member 45 and the substrate P. It has become. In addition, a gas ejection port 46 constituting a part of the processing gas supply unit that is elongated in the X-axis direction is provided at the center of the electrode 42. The gas outlet 46 is connected to a gas inlet 49 through a gas passage 47 and an intermediate chamber 48 inside the electrode.

  The predetermined gas including the processing gas ejected from the gas ejection port 46 through the gas passage 47 flows in the space in the forward and backward directions in the movement direction (Y-axis direction), and the front end of the dielectric member 45 and Exhausted from the rear end. At the same time, a predetermined voltage is applied from the power source 41 to the electrode 42, and a gas discharge is generated between the discharge generators 44 and 44 and the sample table 40. The excited active species of the predetermined gas is generated by the plasma generated by the gas discharge, and the entire surface of the substrate P passing through the discharge region is continuously processed.

In this embodiment, the predetermined gas is oxygen (O ₂ ) as a processing gas, helium (He), argon (Ar) for easily starting discharge and maintaining stable under a pressure near atmospheric pressure. Or a rare gas such as nitrogen or an inert gas such as nitrogen (N ₂ ). In particular, by using oxygen as the processing gas, organic matter (resist or HMDS) residue at the time of bank formation at the bottom 35 between the banks B and B can be removed. That is, in the hydrofluoric acid treatment, HMDS (organic matter) at the bottom 35 between the banks B and B may not be completely removed. Or the resist (organic substance) at the time of bank formation may remain in the bottom 35 between the banks B and B. Therefore, by performing O ₂ plasma treatment, the residue at the bottom 35 between the banks B and B is removed.

Here, the HMDS layer 32 has been described as being removed by hydrofluoric acid treatment, but the HMDS layer 32 at the bottom 35 between the banks can be sufficiently removed by O ₂ plasma treatment or ultraviolet irradiation treatment. The acid treatment may not be performed. In addition, here, the description has been given of performing either the O ₂ plasma treatment or the ultraviolet irradiation treatment as the lyophilic treatment, but it is needless to say that the O ₂ plasma treatment and the ultraviolet irradiation treatment may be combined.

<Liquid repellency treatment process>
Subsequently, the bank B is subjected to a liquid repellency treatment to impart liquid repellency to the surface thereof. As the liquid repellent treatment, a plasma treatment method (CF ₄ plasma treatment method) using carbon tetrafluoride (tetrafluoromethane) as a treatment gas is employed. The conditions of the CF ₄ plasma treatment are, for example, a plasma power of 50 to 1000 W, a carbon tetrafluoride gas flow rate of 50 to 100 mL / min, a substrate transport speed to the plasma discharge electrode of 0.5 to 20 mm / sec, and a substrate temperature of 70 to 90 ° C. The processing gas is not limited to tetrafluoromethane, and other fluorocarbon-based gases or gases such as SF ₆ and SF ₅ CF ₃ can also be used. The plasma processing apparatus described with reference to FIG. 9 can be used for the CF ₄ plasma processing.

By performing such a liquid repellency treatment, a fluorine group is introduced into the resin constituting the banks B and B, and a high liquid repellency is imparted to the banks B and B. The O ₂ plasma treatment as the lyophilic treatment described above may be performed before the formation of the bank B. However, acrylic resin, polyimide resin, and the like are more fluorinated when pre-treated with O ₂ plasma ( Since it has a property of being easily made liquid repellent, it is preferable to perform O ₂ plasma treatment after the bank B is formed.

  Note that the lyophobic treatment for the banks B and B has some influence on the exposed portion of the substrate P between the banks previously subjected to the lyophilic treatment, but particularly when the substrate P is made of glass or the like, the lyophobic treatment is performed. Since the introduction of the fluorine group does not occur, the lyophilicity, that is, the wettability of the substrate P is not substantially impaired.

By the lyophilic process and the liquid repellent process described above, the surface modification process is performed so that the liquid repellency of the bank B is higher than the liquid repellency of the bottom 35 between the banks. Here, although performing an O ₂ plasma treatment as lyophilic process, as described above, since the case where the substrate P is made of glass or the like does not occur the introduction of a fluorine group by lyophobic process, the O ₂ plasma treatment The liquid repellency of the bank B can be made higher than that of the bottom part 35 between the banks by performing only the CF ₄ plasma process without performing the process.

<Material placement process>
Next, the droplets of the wiring pattern forming ink are arranged between the banks B and B on the substrate P by using a droplet discharge method by the droplet discharge device IJ. Here, an ink made of an organic silver compound using an organic silver compound as a conductive material and diethylene glycol diethyl ether as a solvent (dispersion medium) is ejected. In the material arranging step, as shown in FIG. 5D, ink containing the wiring pattern forming material is discharged as droplets from the droplet discharge head 1. The droplet discharge head 1 discharges ink droplets toward the groove 34 between the banks B and B, and disposes the ink in the groove 34. At this time, the wiring pattern formation scheduled region (that is, the groove portion 34) from which the droplet is discharged is surrounded by the banks B and B, so that the droplet can be prevented from spreading to other than the predetermined position.

  In this embodiment, the width W of the groove 34 between the banks B and B (here, the width at the opening of the groove 34) is set smaller than the diameter D of the ink (functional liquid) droplet. Note that the atmosphere for discharging the droplets is preferably set to a temperature of 60 ° C. or lower and a humidity of 80% or lower. Thereby, it is possible to perform stable droplet discharge without clogging the discharge nozzle of the droplet discharge head 1.

  When such a droplet is ejected from the droplet ejection head 1 and placed in the groove 34, the droplet has a diameter D larger than the width W of the groove 34, and is indicated by a two-dot chain line in FIG. A part of the train rides on the banks B and B. However, since the surfaces of the banks B and B are liquid-repellent and tapered, the droplets on the banks B and B are repelled from the banks B and B, and further, the capillaries By flowing down into the groove 34 due to the phenomenon, a droplet enters the groove 34 as shown by a solid line in FIG.

  Further, the ink discharged into the groove 34 or flowing down from the banks B and B is easy to spread because the substrate P (bottom 35) has been made lyophilic, so that the ink is more evenly distributed. 34 is embedded.

<Intermediate drying process>
After the droplets are discharged onto the substrate P, a drying process is performed as necessary to remove the dispersion medium and secure the film thickness. The drying process can be performed by lamp annealing, for example, in addition to a process using a normal hot plate or an electric furnace for heating the substrate P. The light source used for lamp annealing is not particularly limited, but excimer lasers such as infrared lamps, xenon lamps, YAG lasers, argon lasers, carbon dioxide lasers, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. It can be used as a light source. In general, these light sources have an output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient. Then, by repeating this intermediate drying step and the material arranging step, a plurality of ink droplets are laminated, and a thick wiring pattern (thin film pattern) 33 is formed as shown in FIG. It is formed.

<Baking process>
In the case of an organic silver compound, the dried film after the discharging step needs to be heat-treated in order to obtain conductivity, to remove the organic component of the organic silver compound and to leave silver particles. For this reason, the substrate after the discharge process is subjected to heat treatment and / or light treatment.

  The heat treatment and / or light treatment is usually performed in the air, but can be performed in an inert gas atmosphere such as nitrogen, argon or helium, or in a reducing atmosphere such as hydrogen, if necessary. The treatment temperature of heat treatment and / or light treatment depends on the boiling point (vapor pressure) of the dispersion medium, the type and pressure of the atmospheric gas, the thermal behavior such as fine particle dispersibility and oxidation, the presence and amount of coating material, It is determined appropriately in consideration of the heat resistant temperature. In the present embodiment, a firing process is performed for 300 minutes at 280 to 300 ° C. in a clean oven in the atmosphere with respect to the ink that has been ejected to form a pattern. For example, in order to remove the organic component of the organic silver compound, it is necessary to bake at about 200 ° C. In the case of using a substrate made of plastic or the like, it is preferably performed at room temperature or higher and 250 ° C. or lower. Through the above steps, the dry film after the discharging process is converted into a conductive film while ensuring electrical contact between the fine particles.

Note that the banks B and B existing on the substrate P can be removed by an ashing separation process after the firing step. As the ashing treatment, plasma ashing, ozone ashing, or the like can be employed. In plasma ashing, a gas (such as oxygen gas that has been converted into plasma) reacts with a bank (resist), and the bank is vaporized to be peeled off and removed. The bank is a solid substance composed of carbon, oxygen, and hydrogen. When this bank chemically reacts with oxygen plasma, it becomes CO ₂ , H ₂ O, O ₂ , and all can be separated as a gas. On the other hand, the basic principle of ozone ashing is the same as that of plasma ashing. O ₃ (ozone) is decomposed and converted to reactive gas O ⁺ (oxygen radical), and this O ⁺ reacts with the bank. The bank that has reacted with O ⁺ becomes CO ₂ , H ₂ O, O ₂ , and all are separated as a gas. The bank is removed from the substrate P by performing an ashing peeling process on the substrate P. In addition to the ashing separation process, a method of dissolving the bank in a solvent or a method of physically removing the bank can be performed as the bank removal step.

  Here, the thin film pattern forming method as the first embodiment of the present invention will be described. As shown in FIG. 6A, when the bank B is formed on the substrate P, a part of the linear region A partitioned by the bank B is widened to form a thin film pattern. Further, the liquid injection part A2 has a circular shape, and the liquid flow part A1 has a thin groove. The liquid injection part A2 and the liquid flow part A1 are arranged in a straight line, and the width d of the liquid injection part A2 is less than twice the line width b of the liquid flow part A1. Has been. Moreover, although arrange | positioned so that liquid injection | pouring part A2 and liquid flow part A1 may be arrange | positioned on a straight line, it is not limited to this. You may arrange | position on a curve.

  As shown in FIG. 6B, a bank B is formed on the substrate P, and functions in a linear region A (which constitutes the liquid injection part A2 and the liquid flow part A1) partitioned by the bank B. It is comprised so that the liquid L can be arrange | positioned. In particular, when the functional liquid L is injected from the nozzle of the droplet discharge head 1 into the liquid injection part A2, the injected functional liquid L flows into the liquid flow part A1.

  Further, in this thin film pattern forming method, the width d of the liquid injection part A2 in the linear region A partitioned by the bank B is formed to be not more than twice the width b of the liquid flow part A1, so that the function is achieved. When the liquid L is disposed, the functional liquid L efficiently flows from the liquid injection part A2 to the liquid flow part A1. By continuously landing the functional liquid L on the liquid injection part A2, the functional liquid L staying in the liquid injection part A2 gradually rises and gradually flows out from the liquid injection part A2 to the liquid flow part A1. . The functional liquid L that has flowed out to the liquid flow part A1 stays in the liquid flow part A1.

  Here, the functional liquid L is disposed in the linear region A partitioned by the bank B, and the functional liquid L is dried, for example, so that a linear film pattern F is formed on the substrate P. In this case, since the shape of the film pattern F is defined by the bank B, for example, by appropriately forming the bank B, for example, by narrowing the width between the adjacent banks B and B of the liquid flow portion A1 portion, The film pattern F is miniaturized and thinned.

  Further, when the bank B is formed on the substrate P, the liquid injection part A2 formed with a wide width d and the liquid flow part A1 formed with a narrow width b are formed in the linear region A partitioned by the bank B. Can be formed. That is, one or more portions having a width d (d> b) wider than the width b of other regions can be provided at predetermined positions in the longitudinal direction of the linear region A.

  In general, when a liquid is disposed in a linear region, it may be difficult for the liquid to flow from the liquid injection part A2 to the liquid flow part A1 due to the action of the surface tension of the liquid, or the liquid may not easily spread in the region. In contrast, in the thin film pattern forming method of the present embodiment, a difference is provided in the line width between the liquid injection part A2 and the liquid flow part A1, and the width of the liquid injection part A2 is the liquid flow part A1. Therefore, the movement of the liquid in this part is an incentive, and the inflow of the functional liquid L into the liquid flow part A1 or the spread of the functional liquid L in the liquid flow part A1 is caused. Promoted.

  Thus, since the inflow of the functional liquid L from the bank B at the time of arrangement | positioning of the functional liquid L is accelerated | stimulated, the film | membrane pattern F is formed in a desired shape. Therefore, the thin linear film pattern F can be formed with high accuracy and stability.

  Here, it will be described with reference to FIGS. 6C and 6D that the width of the liquid injection part A2 is not more than twice the line width of the liquid flow part A1.

  When the functional liquid L drops and lands on the liquid injecting portion A2, the functional liquid droplet L2 accumulated in the liquid injecting portion A2 has a hemispherical shape due to the force to be stabilized by the surface tension (see FIG. 6C).

Here, the diameter of the fluid injecting section A2 d, the line width of the fluid flowing section A1 b, P ₂ the pressure of the functional droplet L2 accumulated in the fluid injecting section _A2, the surface tension sigma, the liquid surface curvature radius R When _2, the pressure P ₂ of P _2, sigma, between R ₂ holds the following relationship, the functional droplet L2 accumulated in the fluid injecting section A2 is given by the following equation (1).

  Next, the functional liquid droplet L2 in the liquid injection part A2 flows out to the liquid flow part A1. At this time, the functional liquid droplet L2 tends to be stabilized in the same manner as described above, but since the liquid flow portion A1 has a narrow groove shape, the functional liquid droplet L1 flows out along the longitudinal direction of the liquid flow portion A1, and the shape thereof is It becomes the shape of a substantially semi-cylindrical shape (substantially semi-cylindrical) (see FIG. 6D).

Here, if the pressure of the functional liquid droplet L1 in the liquid flow part A1 is P ₁ , the surface tension is σ, the curvature radius in the width direction is R ₁ , and the curvature radius in the longitudinal direction is R ₃ , the curvature radius R ₃ is regarded as ∞. The following relationship is established among P ₁ , σ, and R ₁ , and the pressure P ₁ of the liquid flow part A1 is given by the following equation (2).

The pressure _{P 1} of the fluid flowing section A1, since the pressure _{P 2} in the fluid injecting section A2 are balanced in the steady _state, P 1 = _{P 2,} and the can (1) and (2) from (3) to obtain .

  Here, the contact angle between the liquid injection part A2 and the liquid flow part A1 will be described with reference to FIG.

  As shown in FIG. 6E, when the radius of curvature of the droplet L is R, the height of the liquid is h, the width of the base is w, and the contact angle is θ, the contact angle θ is expressed by the following equation (4): Given in.

  Similarly, the height h of the liquid can be expressed by equation (5).

By applying (4) to formula (3), the contact angle theta ₁ of the fluid flowing section A1, the contact angle theta ₂ of the fluid injecting section A2 is given by (6) and (7).

Here, when d = 2b, θ ₁ = θ ₂ is obtained from the equations (6) and (7).

Further, since the contact angle of the liquid is very large because the bank B is liquid repellent, if the contact angle is 90 degrees or more and 180 degrees or less, θ ₁ > θ ₂ is established when d> 2b from Equation (6). , D <2b, θ ₁ <θ ₂ holds.
Incidentally, when the landed droplets to the fluid injecting section A2, in order to does not protrude liquid from the bank B, the contact angle theta ₂ of the liquid in the fluid injecting section A2 is, liquid fluid flowing section A1 a requirement that does not exceed the contact angle theta _1. Then, the total amount of liquid to be injected into the liquid injection part A2 is almost determined from the finally required film thickness, and in order to efficiently form a thin film with as few injections as possible, the maximum injection liquid amount of the liquid injection part A2 ( It is advantageous to have a larger maximum filling liquid amount. The line width b of the liquid flow part A1 is determined from the line width of the necessary wiring and is basically a design value that cannot be changed, and the size (area) of the liquid flow part A2 is preferably small in consideration of area efficiency. .
Here, in order to store as much liquid as possible in the liquid injection part A2, the volume (bottom area × height (depth)) of the liquid injection part A2 may be increased. However, since the height of the bank B that determines the depth of the liquid receiving portion causes unevenness on the substrate surface, the height of the thin film finally formed is as high as a little higher than the film thickness. Preferably).
That is, if the contact angle θ ₁ ≦ contact angle θ ₂ , the maximum liquid injection amount of the liquid injection part A2 can be increased.
Therefore, it is preferable that d ≦ 2b, and as much liquid as possible can be injected into the liquid injection portion A2 in a short time.

Also, (5) by applying the formula to (3), the height _{h 1} of the liquid fluid flowing section A1, the height _{h 2} of the liquid fluid injecting section A2 (8) formula (9 ).

Here, when d = 2b, h ₂ = 2h ₁ is obtained from the equations (8) and (9).

That is, the final film thickness has a positive correlation with the average height of the liquid. The average height h ₁ of the semicylindrical liquid accumulated in the liquid flow part A1 is obtained by integrating the height of a semicircle (cut surface) formed by cutting the semicylindrical in the width direction within the range of the base width. It is obtained by dividing the area of the semicircle by the base width d. On the other hand, the average height h _A2 of the semispherical liquid in the liquid injecting portion A2 is obtained by calculating an integral for half-rotating the semicircle shown in FIG. It is obtained by dividing the volume of the hemisphere by the base area. Accordingly, assuming that the liquid heights (maximum heights) h ₁ and h _{2 of} the semi-cylindrical and the semi-circular sphere are the same (h ₁ = h ₂ ), the liquid flow part at the average heights h _A1 and h _A2 towards the average height _{h A1} in the A1 is greater than the average height _{h A2} of the fluid injecting section _{A2 (h A2 <h A1)} , if the height of the liquid is in the relationship _h 2 = 2h _1, the average The height is 2 times or less (h _A2 <2h _A1 ).
Therefore, if the relationship of d ≦ 2b is established between the width d of the liquid injection part A2 and the line width b of the liquid flow part A1, the average of the liquid accumulated in each of the liquid injection part A2 and the liquid flow part A1 The height satisfies the relationship h _A2 <2h _A1 . For this reason, the relationship between the thicknesses of the corresponding portions of the thin film finally obtained by drying the liquid accumulated in the liquid injection portion A2 and the liquid flow portion A1 is positively correlated with the relationship of h _A2 <2h _A1. Therefore, the film thickness is less than twice as much, and the film thickness difference between the thin films formed in the liquid injection part A2 and the liquid flow part A1 is easily within the allowable range.

  Therefore, the diameter (average diameter) d of the liquid injection part A2 is preferably not more than twice the line width b of the liquid flow part A1 (in this embodiment, b <do ≦ d ≦ 2b (where do is before landing) The droplet diameter is preferably 2) (d = 2b).

  In the first embodiment as described above, the following effects are obtained.

(1) the relationship between the line width b of the width d and the fluid flowing section A1 of the fluid injecting section A2, by the d ≦ 2b, the contact angle theta ₂ of the liquid in the fluid injecting section A2 is, liquid in the fluid flowing section A1 of greater than the contact angle theta _1, it can be as much the maximum fluid injecting amount when injecting a fluid into the fluid injecting section A2. That is, a thin film pattern can be formed efficiently with as few injections as possible.
(2) The liquid injected into the liquid injection part A2 can efficiently flow into the liquid flow part A1, and the ratio of the liquid height in the liquid injection part A2 and the liquid flow part A1 satisfies 2 or less. Therefore, the film thicknesses can be matched within an allowable range (the film thicknesses at the liquid injection part A2 and the liquid flow part A1 are substantially equal). Therefore, a finer thin film pattern can be formed.
(3) If a large amount of liquid remains in the liquid injection portion A2, the evaporation rate is greatly different between the liquid injection portion A2 and the liquid flow portion A1, so that the uniformity of the film may be impaired. Since the evaporation rates are the same, the uniformity of the film during the drying process can be easily obtained. In other words, since the film thicknesses of the liquid injection part A2 and the liquid flow part A1 are approximately the same, a thin film pattern with less unevenness can be formed.
(4) Furthermore, even in a laminated film having a laminated structure obtained by laminating films of different materials on the thin film pattern in a subsequent process (dry and wet thin film formation), the obtained film has little unevenness. Since it is a thin film pattern, a laminated film capable of preventing quality problems such as disconnection and short-circuit can be formed, so that a device with stable quality can be provided.

(Second Embodiment)
Next, a second embodiment of the present invention will be described. The second embodiment is different from the first embodiment in that the liquid injection part A2 has an elliptical shape.
The same parts as those in the first embodiment described above and parts having the same functions are denoted by the same reference numerals and description thereof is omitted.

  FIG. 7 is a conceptual diagram of a thin film pattern forming method as the second embodiment.

  As shown in FIG. 7A, this thin film pattern is configured such that when the bank B is formed on the substrate P, the liquid injection part A2 has an elliptical shape in the linear region A partitioned by the bank B. Has been. Here, the harmonic average of the two main diameters of the minor axis m and the major axis n of the liquid injection part A2 is configured to be at least twice as wide as the width b of the liquid flow part A1. Yes.

  As shown in FIG. 7B, the functional liquid L can be arranged in a linear region A partitioned by a bank B formed on the substrate P. When the dropped functional liquid L tries to spread to the range of the liquid injection part A2, a force to stabilize by the surface tension works, and the surface of the liquid droplet has a hemispherical shape (see FIG. 6C). ).

  Here, before the functional liquid L is filled in the liquid injection part A2, the functional liquid L flows out from the liquid injection part A2 along the longitudinal direction of the liquid flow part A1, and accumulates in the liquid flow part A1. The functional liquid L accumulated in the liquid flow part A1 has a substantially kamaboko type (substantially semi-cylindrical) shape (see FIG. 6D).

Here, assuming that the minor axis of the liquid injection part A2 is m, the major axis is n, the line width of the liquid flow part A1 is b, and the liquid surface curvature radius at the center of the ellipse is R _2m and R _2n , Equation (10) is given. This expression (10) is an approximate expression.

  Therefore, Equation (11) is obtained from Equation (10).

  The pressure balance condition in the steady state is given by equation (12).

  Therefore, equation (13) is obtained from equation (12).

  Here, if m = n, it is the same as in the case of the circle obtained in the first embodiment (see equation (3)).

Further, since the edge in the minor axis direction gives the maximum contact angle in the liquid injection part A2, the radius of curvature R _2m in the minor axis direction can be used.

Here, the contact angle in the case of an ellipse will be described. By using the expression (12) instead of the expression (3) of the first embodiment, the contact angle θ ₁ of the liquid flow part A1 can be expressed by the expression (14).

Similarly, by using the equation (13), the contact angle theta ₂ of the fluid injecting section A2 is given by equation (15).

Therefore, from equation (14) and equation (15), the line width b of the liquid flow part A1 is given by equation (16), and at this time, θ ₁ = θ ₂ is obtained.

  Therefore, equation (17) is obtained from equation (16).

That is, like the first embodiment, the pressure P ₂ of the functional droplet L2 accumulated in the fluid injecting section A2, the pressure P ₁ of the functional droplet L1 flowing to the fluid flowing section A1, balanced in the steady state. P ₁ = P ₂ , and the harmonic mean of the two main diameters of the minor axis m and the major axis n of the liquid injection part A2 is preferably not more than twice the line width b of the liquid flow part A1, and is particularly preferable. Is twice as much.

  In the second embodiment as described above, the following effects are obtained.

  (5) Even if the shape of the liquid injection part A2 becomes an ellipse, the relationship between the functional liquid droplet L2 dropped onto the liquid injection part A2 and the functional liquid droplet L1 flowing out to the liquid flow part A1 is the first embodiment. The same kind of effect can be obtained.

(Third embodiment)
Next, a third embodiment of the present invention will be described. The third embodiment is different from the first embodiment and the second embodiment described above in that the liquid injection part A2 has a square shape.
The same parts as those in the first embodiment and the second embodiment described above and parts having the same functions are denoted by the same reference numerals and description thereof is omitted.

  FIG. 8 is a conceptual diagram of a thin film pattern forming method as the third embodiment.

  As shown in FIG. 8A, this thin film pattern is formed so that when the bank B is formed on the substrate P, the liquid injection part A2 has a square shape in the linear region A partitioned by the bank B. It is configured. Moreover, the length K of one side of the liquid injection part A2 is configured to be at least twice as large as the width b of the liquid flow part A1.

  As shown in FIG. 8B, the functional liquid L can be arranged in a linear region A partitioned by a bank B formed on the substrate P. When the dropped functional liquid L tries to spread in the range of the liquid injection part A2, a force to stabilize by the surface tension works, and the surface of the liquid droplet has a hemispherical shape. (See FIG. 6 (c)).

  Here, when the functional liquid L is filled in the liquid injection part A2, the functional liquid L flows out from the liquid injection part A2 along the longitudinal direction of the liquid flow part A1, and accumulates in the liquid flow part A1. The functional liquid L accumulated in the liquid flow part A1 has a substantially kamaboko type (substantially semi-cylindrical) shape (see FIG. 6D).

That is, like the first embodiment, the pressure P ₂ of the functional droplet L2 accumulated in the fluid injecting section A2, the pressure P ₁ of the functional droplet L1 flowing to the fluid flowing section 1, balanced in the steady state. P ₁ = P ₂ and the difference between the length K of one side of the liquid injection part A2 and the line width b of the liquid flow part A1 from 2R ₁ = R ₂ (see equation (3)), preferably K is b 2 times or less, particularly preferably 2 times.

  In the third embodiment as described above, the following effects are obtained.

  (6) Even when the shape of the liquid injection part A2 becomes square, the relationship between the functional liquid droplet L2 accumulated in the liquid injection part A2 and the functional liquid droplet L1 flowing out to the liquid flow part A1 is the same as that of the first embodiment. Since they are almost the same, the same kind of effect can be obtained.

<Electro-optical device>
A liquid crystal display device which is an example of the electro-optical device of the invention will be described. FIG. 10 is a plan view of the liquid crystal display device according to the present invention as seen from the counter substrate side shown together with each component, and FIG. 11 is a cross-sectional view taken along the line HH ′ of FIG. FIG. 12 is an equivalent circuit diagram of various elements and wirings in a plurality of pixels formed in a matrix in the image display region of the liquid crystal display device, and FIG. 13 is a partial enlarged cross-sectional view of the liquid crystal display device. In each drawing used in the following description, the scale is different for each layer and each member so that each layer and each member can be recognized on the drawing.

  10 and 11, in the liquid crystal display device (electro-optical device) 100 according to the present embodiment, a pair of TFT array substrate 10 and counter substrate 20 are attached by a sealing material 52 which is a photocurable sealing material. The liquid crystal 50 is sealed and held in the region partitioned by the sealing material 52. The sealing material 52 is formed in a frame shape closed in a region within the substrate surface.

  A peripheral parting 53 made of a light shielding material is formed in a region inside the region where the sealing material 52 is formed. A data line driving circuit 201 and a mounting terminal 202 are formed along one side of the TFT array substrate 10 in a region outside the sealing material 52, and the scanning line driving circuit 204 is formed along two sides adjacent to the one side. Is formed. On the remaining side of the TFT array substrate 10, a plurality of wirings 205 are provided for connecting between the scanning line driving circuits 204 provided on both sides of the image display area. Further, at least one corner of the counter substrate 20 is provided with an inter-substrate conductive material 206 for establishing electrical continuity between the TFT array substrate 10 and the counter substrate 20.

  Instead of forming the data line drive circuit 201 and the scanning line drive circuit 204 on the TFT array substrate 10, for example, a TAB (Tape Automated Bonding) substrate on which a driving LSI is mounted and the periphery of the TFT array substrate 10 The terminal group formed in the part may be electrically and mechanically connected via an anisotropic conductive film. In the liquid crystal display device 100, the type of the liquid crystal 50 to be used, that is, an operation mode such as a TN (Twisted / Nematic) mode, an STN (Super Twisted / Nematic) mode, or a normally white mode / normally black mode. According to the above, a retardation plate, a polarizing plate and the like are arranged in a predetermined direction, but the illustration is omitted here. In the case where the liquid crystal display device 100 is configured for color display, for example, red (R), green (G), blue, and the like are disposed in a region of the counter substrate 20 facing each pixel electrode (to be described later) of the TFT array substrate 10. The color filter (B) is formed together with the protective film.

  In the image display region of the liquid crystal display device 100 having such a structure, as shown in FIG. 12, a plurality of pixels 100a are configured in a matrix, and each of these pixels 100a has a pixel switching region. TFT (switching element) 30 is formed, and a data line 6 a for supplying pixel signals S 1, S 2,..., Sn is electrically connected to the source of the TFT 30. Pixel signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. . Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 3a in a pulse-sequential manner in this order at a predetermined timing. It is configured.

  The pixel electrode 19 is electrically connected to the drain of the TFT 30, and the pixel signal S1, S2,..., Sn supplied from the data line 6a is turned on by turning on the TFT 30 as a switching element for a certain period. Write to the pixel at a predetermined timing. The pixel signals S1, S2,..., Sn written in the liquid crystal via the pixel electrode 19 in this way are held for a certain period with the counter electrode 121 of the counter substrate 20 shown in FIG. In order to prevent the held pixel signals S1, S2,..., Sn from leaking, a storage capacitor 60 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 19 and the counter electrode 121. For example, the voltage of the pixel electrode 19 is held by the storage capacitor 60 for a time that is three orders of magnitude longer than the time when the source voltage is applied. Thereby, the charge retention characteristics are improved, and the liquid crystal display device 100 with a high contrast ratio can be realized.

  FIG. 13 is a partial enlarged cross-sectional view of the liquid crystal display device 100 having the bottom gate type TFT 30, and the gate wiring 61 is formed on the glass substrate P constituting the TFT array substrate 10 by the wiring pattern forming method of the above embodiment. It is formed between banks B and B on the substrate P.

  A semiconductor layer 63 made of an amorphous silicon (a-Si) layer is stacked on the gate wiring 61 with a gate insulating film 62 made of SiNx interposed therebetween. A portion of the semiconductor layer 63 facing the gate wiring portion is a channel region. On the semiconductor layer 63, junction layers 64a and 64b made of, for example, an n + -type a-Si layer for obtaining an ohmic junction are stacked, and the channel is protected on the semiconductor layer 63 in the central portion of the channel region. An insulating etch stop film 65 made of SiNx is formed. The gate insulating film 62, the semiconductor layer 63, and the etch stop film 65 are patterned as shown in the figure by performing resist coating, photosensitive / developing, and photoetching after vapor deposition (CVD).

  Further, the bonding layers 64a and 64b and the pixel electrode 19 made of ITO are formed in the same manner, and are patterned as shown in the figure by performing photoetching. Banks 66 are provided on the pixel electrode 19, the gate insulating film 62, and the etch stop film 65, and silver droplets are discharged between the banks 66 using the above-described droplet discharge device IJ. Thus, a source line and a drain line can be formed.

  In the above embodiment, the TFT 30 is used as a switching element for driving the liquid crystal display device 100. However, the present invention can be applied to, for example, an organic EL (electroluminescence) display device in addition to the liquid crystal display device. An organic EL display device has a structure in which a thin film containing a fluorescent inorganic and organic compound is sandwiched between a cathode and an anode, and is excited by injecting electrons and holes into the thin film and recombining them. It is an element that emits light by using light emission (fluorescence / phosphorescence) when a child (exciton) is generated and the exciton is deactivated. Then, on the substrate having the TFT 30 described above, among the fluorescent materials used for the organic EL display element, a material exhibiting each emission color of red, green and blue, that is, a light emitting layer forming material and a hole injection / electron transport layer are provided. A self-luminous full-color EL device can be manufactured by using ink as a material to be formed and patterning each. The range of the device (electro-optical device) in the present invention includes such an organic EL device.

  As another embodiment, an embodiment of a contactless card medium will be described. As shown in FIG. 14, a non-contact type card medium (electronic device) 400 according to the present embodiment includes a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a housing composed of a card base 402 and a card cover 418. At least one of power supply and data transmission / reception is performed by at least one of electromagnetic waves and capacitive coupling with an external transceiver (not shown). In the present embodiment, the antenna circuit 412 is formed by the wiring pattern forming method according to the embodiment.

  In addition to the above, as a device (electro-optical device) according to the present invention, a current flows in parallel to the film surface in a PDP (plasma display panel) or a small-area thin film formed on a substrate, The present invention can also be applied to a surface conduction electron-emitting device that utilizes a phenomenon in which electron emission occurs.

<Electronic equipment>
Specific examples of the electronic device of the present invention will be described.
FIG. 15A is a perspective view showing an example of a mobile phone. In FIG. 15A, reference numeral 600 denotes a mobile phone body, and reference numeral 601 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 15B is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 15B, reference numeral 700 denotes an information processing device, 701 denotes an input unit such as a keyboard, 703 denotes an information processing body, and 702 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
FIG. 15C is a perspective view showing an example of a wristwatch type electronic apparatus. In FIG. 15C, reference numeral 800 denotes a watch body, and reference numeral 801 denotes a liquid crystal display unit including the liquid crystal display device of the above embodiment.
The electronic apparatus shown in FIGS. 15A to 15C includes the liquid crystal display device of the above-described embodiment, and has a wiring pattern that is finely thinned.
In addition, although the electronic device of this embodiment shall be provided with a liquid crystal device, it can also be set as the electronic device provided with other electro-optical devices, such as an organic electroluminescent display apparatus and a plasma type display apparatus.

  It should be noted that the present invention is not limited to the above-described embodiment, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention. A modification is shown below.

  (Modification 1) In the first to third embodiments, the bank is formed and the liquid repellency is imparted to the bank. However, the present invention is not limited to this. For example, there may be no bank. For example, surface treatment is performed on the substrate, lyophilic treatment is performed on the area where the wiring pattern is to be formed, lyophobic treatment is performed on other portions, and ink or organic silver compound containing conductive fine particles is disposed on the lyophilic treatment portion. Also good.

  In this way, a desired wiring pattern can be formed.

  (Modification 2) In the first to third embodiments, the thin film pattern is a conductive film, but the present invention is not limited to this. For example, the present invention can also be applied to a color filter used for colorizing a display image in a liquid crystal display device. This color filter can be formed by arranging R (red), G (green), and B (red) ink (liquid material) as droplets in a predetermined pattern with respect to the substrate. Alternatively, a color filter may be formed by forming a bank according to a predetermined pattern and providing the bank with liquid repellency and then disposing ink.

  In this way, a liquid crystal display device having a high-performance color filter can be manufactured.

  (Modification 3) As described in the first to third embodiments, the bank is provided around the liquid injection portion A2, but the present invention is not limited to this. For example, the liquid injection part A2 and the liquid flow part A1 may be formed without providing a bank.

In this way, the contact angle theta ₂ of the liquid dropped on the fluid injecting section A2 without bank, and the contact angle theta ₁ of the liquid dropped on the fluid flowing section A1 is, the above-described first embodiment Since the same relationship is established, the same type of effect as in the first to third embodiments can be obtained.

  (Modification 4) As described in the first to third embodiments, as much liquid (up to the maximum liquid filling amount) as possible is supplied to the liquid injecting portion A2, but the present invention provides this. Not exclusively. For example, the amount of liquid supplied to the liquid injection part A2 may not be close to the maximum liquid filling amount.

  In this way, the liquid dripped into the liquid injection part A2 is slowly filled in the area surrounded by the bank B, so that it does not overflow from the bank B.

  (Modification 5) As described in the first to third embodiments, the shape of the liquid injection portion A2 is not limited to a circular shape or an elliptical shape. For example, the substantially isotropic shape is not limited to a circular shape, but is a regular polygon such as a square, a regular pentagon, a regular hexagon, a regular octagon, and a regular dodecagon, and an elliptical shape having a major axis and a minor axis that are substantially equal (can be regarded as a substantial circle) Shape). The anisotropic shape is not limited to an elliptical shape, and may be a rectangle or a rhombus. In short, the liquid injection part A2 may have a shape whose width is not more than twice the line width of the liquid flow part A1 in the case of a substantially isotropic shape, while the average diameter is liquid flow in the case of an anisotropic shape. Any shape that is twice or less the line width of the portion A1 may be used.

In this way, the contact angle theta ₂ of the liquid dropped on the fluid injecting section A2, the contact angle theta ₁ of the liquid dropped on the fluid flowing section A1 is, is the same as in the first embodiment described above relationship Since this is true, the same type of effect as in the first to third embodiments can be obtained.

  Moreover, the technical idea grasped | ascertained by said embodiment and modification is as follows.

  (Technical idea 1) A thin film pattern substrate in which a thin film pattern is formed in a region recessed in the substrate, and the recessed region is filled with a functional liquid that is a material before drying of the thin film pattern. And a linear liquid flow part connected to the liquid injection part so that the functional liquid injected into the liquid injection part can flow in, and an average diameter of the liquid injection part is the liquid flow The thin film pattern substrate is set to be twice or less the line width of the portion.

With such a configuration, since the width d of the liquid injection part A2 is set to be not more than twice the line width b of the liquid flow part A1, the contact angle θ _{2 of the} liquid dropped on the liquid injection part A2 and Since the contact angle θ _{1 of the} liquid dropped on the liquid flow part A1 has the same relationship as in the first embodiment, the same kind of effect as in the first to third embodiments can be obtained.

  (Technical idea 2) A thin film pattern substrate in which a thin film pattern is formed in a region recessed in the substrate, and the recessed region is filled with a functional liquid which is a material before drying the thin film pattern. And a linear liquid flow part connected to the liquid injection part so that the functional liquid injected into the liquid injection part can flow in. The liquid injection part has a substantially different diameter in different directions. A thin film pattern substrate having equal substantially isotropic shapes, wherein the width of the liquid injection part is set to be not more than twice the line width of the liquid flow part.

With such a configuration, the liquid injection part A2 has substantially the same diameter in different directions, and the width d of the liquid injection part A2 is set to be not more than twice the line width b of the liquid flow part A1. Since the contact angle θ ₂ of the liquid dropped on the injection part A 2 and the contact angle θ _{1 of the} liquid dropped on the liquid flow part A 1 have the same relationship as in the first embodiment, the first embodiment The same kind of effect as the third embodiment can be obtained.

  (Technical idea 3) A thin film pattern substrate in which a thin film pattern is formed in a region recessed in the substrate, and the recessed region is filled with a functional liquid which is a material before drying the thin film pattern. And a linear liquid flow part connected to the liquid injection part so that the functional liquid injected into the liquid injection part can flow in. The liquid injection part has different diameters in different directions. A thin film pattern substrate having an anisotropic shape, wherein an average diameter of the liquid injection part is set to be not more than twice a line width of the liquid flow part.

With such a configuration, even if the liquid injection part A2 has an anisotropic shape in different directions, the width d of the liquid injection part A2 is set to be not more than twice the line width b of the liquid flow part A1. from a contact angle theta ₂ of the liquid dropped on the fluid injecting section A2, the contact angle theta ₁ of the liquid dropped on the fluid flowing section A1 is, since established is similar to relationships in the first embodiment described above, the The same kind of effect as in the first to third embodiments can be obtained.

The schematic perspective view of a droplet discharge device. The figure for demonstrating the discharge principle of the liquid material by a piezo system. The flowchart which shows a thin film pattern formation method. The schematic diagram which shows a thin film pattern formation procedure. The schematic diagram which shows a thin film pattern formation procedure. It is a schematic diagram which shows the thin film pattern formation method as 1st Embodiment, (a) is a top view, (b) is the figure by which the functional liquid was dripped, (c) is a figure of a functional droplet, (d) is a figure. FIG. 5E is a diagram showing functional droplets, and FIG. It is a schematic diagram which shows the thin film pattern formation method as 2nd Embodiment, (a) is a top view, (b) is the figure by which the functional liquid was dripped. It is a schematic diagram which shows the thin film pattern formation method as 3rd Embodiment, (a) is a top view, (b) is the figure by which the functional liquid was dripped. The figure which shows an example of the plasma processing apparatus used for a residue processing process. The top view which looked at the liquid crystal display device from the counter substrate side. Sectional drawing which follows the HH 'line | wire of FIG. The equivalent circuit diagram of a liquid crystal display device. The partial expanded sectional view of a liquid crystal display device. The disassembled perspective view of a non-contact-type card medium. FIG. 11 illustrates a specific example of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Droplet discharge head, P ... Board | substrate, (theta) ... Contact angle, (theta) ₁ ... Functional droplet contact angle of a liquid flow part, (theta) ₂ ... Functional droplet contact angle of a liquid injection part, Functional liquid ... L, Function Liquid droplets ... L1, Functional liquid droplets ... L2, B ... Bank, A ... Linear region A, A1 ... Liquid flow part, A2 ... Liquid injection part, d ... Line width of liquid injection part, b ... Line of liquid flow part Width, R ₂ ... Liquid surface radius of curvature of the liquid injection part, R ₁ ... Liquid surface curvature radius of the liquid flow part, P ₁ ... Pressure of the functional droplet dropped on the liquid flow part, P ₂ ... Dropping on the liquid injection part Pressure of the functional droplets, σ ... surface tension, m ... the length of the minor axis when the liquid injection part is elliptical, n ... the length of the major axis when the liquid injection part is elliptical, K ... the liquid injection part is square The length of one side.

Claims (8)

A method of manufacturing a thin film pattern substrate, wherein a thin film pattern is formed in a region recessed in the substrate,
A step of forming the widened portion having a relatively wide width and the recessed region provided with a linear portion disposed so that the functional liquid flows from the widened portion ;
Injecting the functional liquid into the widened portion;
Drying the functional liquid flowing into the linear portion to form a thin film pattern;
With
In the recessed area , the average diameter of the line width of the widened portion is larger than the diameter of the droplet of the functional liquid disposed in the widened portion, and is not more than twice the line width of the linear portion. It forms so that it may become. The manufacturing method of the thin film pattern board | substrate characterized by the above-mentioned. In the manufacturing method of the thin film pattern substrate of Claim 1,
Forming the widened portion into a substantially isotropic shape having substantially the same diameter in different directions;
A method of manufacturing a thin film pattern substrate, wherein the diameter of the widened portion is not more than twice the line width of the linear portion. In the manufacturing method of the thin film pattern substrate of Claim 1,
Forming the widened portion into an anisotropic shape with different diameters in different directions;
A method of manufacturing a thin film pattern substrate, wherein an average diameter of the widened portion is set to be not more than twice a line width of the linear portion. In the manufacturing method of the thin film pattern board | substrate of Claim 2,
The method of manufacturing a thin film pattern substrate, wherein the substantially isotropic shape of the widened portion is a substantially circular shape. In the manufacturing method of the thin film pattern substrate according to claim 3,
The anisotropic shape of the widened portion is an elliptical shape, and the harmonic average of the major axis and the minor axis of the widened portion is set to be not more than twice the line width of the linear portion. Manufacturing method. In the manufacturing method of the thin film pattern substrate as described in any one of Claims 1-5 ,
The method for producing a thin film pattern substrate, wherein the inside of the recessed region is a lyophilic portion. In the manufacturing method of the thin film pattern substrate as described in any one of Claims 1-6 ,
A method of manufacturing a thin film pattern substrate, wherein the functional liquid is injected into the widened portion by an ink jet method. In the method for manufacturing a thin film pattern substrate according to any one of claims 1 to 7,
The method for manufacturing a thin film pattern substrate, wherein the thin film pattern is a conductive pattern.

Images