JP4675213B2 - Suction pad for semiconductor wafer - Google Patents

Suction pad for semiconductor wafer Download PDF

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JP4675213B2
JP4675213B2 JP2005318476A JP2005318476A JP4675213B2 JP 4675213 B2 JP4675213 B2 JP 4675213B2 JP 2005318476 A JP2005318476 A JP 2005318476A JP 2005318476 A JP2005318476 A JP 2005318476A JP 4675213 B2 JP4675213 B2 JP 4675213B2
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semiconductor wafer
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suction pad
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智 小田嶋
清文 田中
則義 細野
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Shin Etsu Polymer Co Ltd
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Description

本発明は、半導体製造プロセスの前工程でロボットやアライナー等に取り付けられて半導体ウェーハを吸着保持する半導体ウェーハ用吸着パッドに関するものである。   The present invention relates to a suction pad for a semiconductor wafer that is attached to a robot, an aligner, or the like in a pre-process of a semiconductor manufacturing process and holds a semiconductor wafer by suction.

半導体製造プロセス(ウェーハプロセスともいう)は、イオン注入等のドーピング、絶縁膜の形成、リソグラフィ、エッチング等からなる前工程と、バックグラインドやダイシング等からなる後工程とに分類され、前工程においては、半導体ウェーハの搬送や向きの調整のため、専用のロボットに高価な吸着パッドが装着されている(特許文献1、2参照)。   Semiconductor manufacturing processes (also called wafer processes) are classified into pre-processes consisting of doping such as ion implantation, formation of insulating films, lithography and etching, and post-processes consisting of back-grinding and dicing. In order to convey the semiconductor wafer and adjust the orientation, an expensive suction pad is attached to a dedicated robot (see Patent Documents 1 and 2).

吸着パッドは、図示しないが、PEEK樹脂製の板体が切削加工されることにより、平面円形を呈する断面略皿形に形成され、ロボットのバキューム装置に接続されており、このバキューム装置の駆動に基づき、半導体ウェーハの裏面を吸着保持する。   Although the suction pad is not shown in the drawing, the PEEK resin plate is cut into a substantially circular dish shape and is connected to the vacuum device of the robot. The vacuum device is used for driving the vacuum device. Based on this, the back surface of the semiconductor wafer is sucked and held.

ところで、半導体製造プロセスの前工程においては、数十〜数百nm程度のパーティクルの有無が製品の歩留まりを左右する大きな問題となる。この点に鑑み、従来の吸着パッドは、帯電防止機能を発揮するカーボンファイバーが練り込まれ、パーティクルを吸い寄せて半導体ウェーハに転写することがないよう形成されている。
特開2004‐174686号公報 特開2004‐153157号公報
By the way, in the pre-process of the semiconductor manufacturing process, the presence or absence of particles of about several tens to several hundreds of nanometers is a major problem that affects the yield of products. In view of this point, the conventional suction pad is formed so that carbon fibers exhibiting an antistatic function are kneaded so that particles are not sucked and transferred to the semiconductor wafer.
Japanese Patent Laid-Open No. 2004-174686 JP 2004-153157 A

従来における半導体ウェーハ用吸着パッドは、以上のようにPEEK樹脂に導電性のカーボンファイバーがランダムに練り込まれているので、切削の際、カーボンファイバーの端部が露出して半導体ウェーハを削ったり、短いカーボンファイバーが脱落してパーティクルを発生させるという問題がある。   In the conventional suction pad for semiconductor wafers, conductive carbon fibers are randomly kneaded into PEEK resin as described above, so when cutting, the ends of the carbon fibers are exposed and the semiconductor wafer is shaved, There is a problem that short carbon fibers fall off and generate particles.

本発明は上記に鑑みなされたもので、半導体ウェーハの損傷を抑制し、パーティクルの発生を防ぐことのできる半導体ウェーハ用吸着パッドを提供することを目的としている。   The present invention has been made in view of the above, and an object of the present invention is to provide a suction pad for a semiconductor wafer that can prevent damage to the semiconductor wafer and prevent generation of particles.

本発明においては上記課題を解決するため、熱可塑性樹脂コンパウンドを用いて射出成形され、半導体ウェーハを吸着支持するものであって、
剛性を有する板体と、この板体の表面に形成されて半導体ウェーハに接触する内側リブと、この内側リブを包囲して半導体ウェーハに接触する外側リブと、板体の中心部に設けられて内側リブと外側リブとの間に連通する吸気孔とを含んで内側リブと外側リブとを同じ高さに揃え、
板体の裏面に、リング形の補強リブを吸気孔を中心に突出形成し、
内側リブを、板体の表面に突出形成されて吸気孔を包囲する複数の扇リブと、板体の表面に突出形成されて複数の扇リブを包囲する複数の円弧リブとから構成し、複数の扇リブと円弧リブとの間に、気体を流通させる隙間を形成し、隣接する扇リブと扇リブとの間に、吸気孔に連通して気体を流通させる溝を形成し、扇リブの半導体ウェーハに対する接触面積を円弧リブの半導体ウェーハに対する接触面積よりも広くするとともに、扇リブには取付孔を穿孔し、隣接する円弧リブと円弧リブとの間には、扇リブ間の溝に連通して気体を流通させる溝を形成し、
外側リブを、板体の周縁部にエンドレスに突出形成してその下端部を補強リブの高さに揃え、この外側リブと複数の円弧リブとの間には、気体を流通させる隙間を区画形成したことを特徴としている。
In the present invention, in order to solve the above-mentioned problem, it is injection-molded using a thermoplastic resin compound , and adsorbs and supports a semiconductor wafer,
A plate having rigidity, an inner rib formed on the surface of the plate and contacting the semiconductor wafer, an outer rib surrounding the inner rib and contacting the semiconductor wafer, and provided at the center of the plate The inner and outer ribs are aligned at the same height, including the intake holes communicating between the inner and outer ribs.
On the back of the plate, a ring-shaped reinforcing rib is formed around the intake hole,
The inner rib is composed of a plurality of fan ribs that protrude from the surface of the plate body and surround the air intake holes, and a plurality of arc ribs that protrude from the surface of the plate body and surround the plurality of fan ribs. The gap between the fan ribs and the arc ribs is formed to allow a gas to flow therethrough, and between the adjacent fan ribs and the fan ribs, a groove is formed to communicate with the air intake holes to flow the gas. The contact area to the semiconductor wafer is made larger than the contact area of the arc rib to the semiconductor wafer, the mounting hole is drilled in the fan rib, and the groove between the adjacent fan ribs communicates with the groove between the fan ribs. To form a groove for flowing gas,
The outer rib is formed to project endlessly at the peripheral edge of the plate body, and its lower end is aligned with the height of the reinforcing rib, and a gap is formed between the outer rib and the plurality of arc ribs for gas flow. It is characterized in that the.

なお、熱可塑性樹脂コンパウンドの熱可塑性樹脂をポリブチレンテレフタレートとすることが好ましい。
また、熱可塑性樹脂コンパウンドの帯電防止性付与材を有機導電体とすることが好ましい。
The thermoplastic resin of the thermoplastic resin compound is preferably polybutylene terephthalate.
The antistatic property-imparting material of the thermoplastic resin compound is preferably an organic conductor.

また、板体に、単数複数の補強リブを形成して強度を高めることもできる。
また、内側リブを、板体に突出形成されて吸気孔を包囲する複数の扇リブと、板体に突出形成されて複数の扇リブを包囲する複数の円弧リブとから構成し、これら複数の扇リブと円弧リブとの間には、気体を流通させる隙間を形成することができる。
Also, the strength can be increased by forming a plurality of reinforcing ribs on the plate.
Further, the inner rib includes a plurality of fan ribs that are formed to protrude from the plate body and surround the air intake holes, and a plurality of arc ribs that are formed to protrude from the plate body and surround the plurality of fan ribs. A gap through which gas flows can be formed between the fan rib and the arc rib.

また、複数の扇リブを吸気孔を中心に配列し、扇リブと扇リブとの間に、吸気孔に連通して気体を流通させる溝を形成することができる。
さらに、複数の円弧リブを、吸気孔を中心に配列し、円弧リブと円弧リブとの間に、扇リブ間の溝に連通して気体を流通させる溝を形成しても良い。
In addition, a plurality of fan ribs can be arranged around the intake holes, and a groove can be formed between the fan ribs and the fan ribs so as to flow gas in communication with the intake holes.
Further, a plurality of arc ribs may be arranged around the air intake holes, and a groove may be formed between the arc ribs and the arc rib so as to communicate with the grooves between the fan ribs and allow gas to flow therethrough.

ここで、特許請求の範囲における半導体ウェーハは、200mm、300mm、450mmタイプ、Siタイプ等を特に問うものではない。板体は、平面視で円形、楕円形、矩形、三角形、多角形等に形成することができる。また、平坦でも良いが、横長の断面略H字形に形成したり、凹凸に形成することもできる。内側リブと吸気孔の位置や数は、適宜増減変更することができる。内側リブは、扇形や柱形等の各種形状に形成することができる。さらに、外側リブは、リング形でも良いし、枠形等でも良い。   Here, the semiconductor wafer in the claims is not particularly limited to 200 mm, 300 mm, 450 mm type, Si type or the like. The plate body can be formed in a circular shape, an elliptical shape, a rectangular shape, a triangular shape, a polygonal shape, or the like in plan view. Further, although it may be flat, it may be formed in a horizontally long cross-section with a substantially H shape, or may be formed in irregularities. The position and number of the inner ribs and the intake holes can be appropriately increased or decreased. The inner rib can be formed in various shapes such as a sector shape and a column shape. Furthermore, the outer rib may be a ring shape, a frame shape, or the like.

本発明によれば、熱可塑性樹脂コンパウンドを使用して半導体ウェーハ用吸着パッドを射出成形すれば、半導体ウェーハ用吸着パッドの表面にスキン層を形成することができ、このスキン層により、カーボンファイバー等が露出して半導体ウェーハを削ったり、カーボンファイバー等が脱落してパーティクルを発生させるという問題を防ぐことが可能になる。   According to the present invention, if a semiconductor wafer suction pad is injection-molded using a thermoplastic resin compound, a skin layer can be formed on the surface of the semiconductor wafer suction pad. It is possible to prevent the problem that the semiconductor wafer is scraped due to exposure and the carbon fiber or the like falls off to generate particles.

本発明によれば、金型に溶融した熱可塑性樹脂コンパウンドを射出すれば、金型に熱可塑性樹脂コンパウンドの熱が奪われ、半導体ウェーハ用吸着パッドの露出面に薄いスキン層が形成されることとなる。したがって、このスキン層を被覆保護に利用すれば、カーボンファイバーの端部が露出して半導体ウェーハを削ったり、短いカーボンファイバーが脱落してパーティクルを発生させるという問題を解消することができる。また、半導体ウェーハ用吸着パッドを射出成形により製造するので、半導体ウェーハ用吸着パッドの表面が粗れることがなく、しかも、安価かつ大量に製造することができる。また、板体の裏面に補強リブを突出形成するので、剛性を付与したり、成形時のひけを防いで凹みを防止することが可能になる。また、各扇リブの接触面積が各円弧リブの接触面積よりも広いので、半導体ウェーハの姿勢の安定化が可能になる。さらに、板体の周縁部に外側リブを形成する他、板体の表裏に補強リブ、扇リブ、及び円弧リブを一体化して強度を高めるので、半導体ウェーハ用吸着パッドの変形防止が期待できる。
また、熱可塑性樹脂コンパウンドの熱可塑性樹脂をポリブチレンテレフタレートとすれば、半導体ウェーハ用吸着パッドの耐磨耗性や低発塵性を向上させることができる。
さらに、熱可塑性樹脂コンパウンドの帯電防止性付与材を有機導電体とすれば、パーティクルの発生を抑制することができる。
According to the present invention, when a molten thermoplastic resin compound is injected into a mold, the heat of the thermoplastic resin compound is taken into the mold, and a thin skin layer is formed on the exposed surface of the suction pad for a semiconductor wafer. It becomes. Therefore, if this skin layer is used for covering protection, it is possible to solve the problem that the end of the carbon fiber is exposed and the semiconductor wafer is shaved, or the short carbon fiber is dropped and generates particles. Moreover, since the suction pad for semiconductor wafers is manufactured by injection molding, the surface of the suction pad for semiconductor wafers is not roughened, and can be manufactured at low cost and in large quantities. Further, since the reinforcing rib is formed to protrude from the back surface of the plate, it is possible to impart rigidity or prevent sinking during molding to prevent dents. Further, since the contact area of each fan rib is wider than the contact area of each arc rib, the posture of the semiconductor wafer can be stabilized. Further, in addition to forming outer ribs on the peripheral edge of the plate body, reinforcing ribs, fan ribs, and arc ribs are integrated on the front and back of the plate body to increase the strength, so that it is possible to prevent deformation of the suction pad for semiconductor wafers.
Further, if the thermoplastic resin of the thermoplastic resin compound is polybutylene terephthalate, it is possible to improve the wear resistance and low dust generation of the semiconductor wafer suction pad.
Furthermore, if the antistatic property imparting material of the thermoplastic resin compound is an organic conductor, the generation of particles can be suppressed.

以下、図面を参照して本発明の好ましい実施の形態を説明すると、本実施形態における半導体ウェーハ用吸着パッドは、図1や図2に示すように、体積抵抗値が1E+0〜1E+13(Ω・cm)の熱可塑性樹脂コンパウンドを用いて射出成形され、剛性を有する板体1と、この板体1上に形成される内側リブ10と、板体1に周設されて内側リブ10を包囲する外側リブ20と、内側リブ10と外側リブ20との間に連通する吸気孔2とを一体に備えており、図示しないアライナー(シータ)ロボットにセットされて半導体ウェーハWの裏面を吸着保持する。   Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. As shown in FIGS. 1 and 2, the suction pad for a semiconductor wafer in this embodiment has a volume resistance value of 1E + 0 to 1E + 13 (Ω · cm ) And a rigid plate body 1, an inner rib 10 formed on the plate body 1, and an outer side surrounding the inner rib 10 around the plate body 1. The rib 20 and the intake hole 2 communicating between the inner rib 10 and the outer rib 20 are integrally provided, and set on an aligner (theta) robot (not shown) to hold the back surface of the semiconductor wafer W by suction.

熱可塑性樹脂コンパウンドは、熱可塑性樹脂に帯電防止性付与材等の配合剤が混合されることにより調製される。この熱可塑性樹脂コンパウンドの熱可塑性樹脂としては、例えばPBT(ポリブチレンテレフタレート)、PEEK、PEI、AAS、PC、ABS、PPE、LCP、PP、PE、PAI、熱可塑性PI、変性品、アロイ等があげられる。これらの中でも、耐磨耗性、低発塵性、寸法安定性に優れるPBTの使用が好ましい。   The thermoplastic resin compound is prepared by mixing a compounding agent such as an antistatic property-imparting material with a thermoplastic resin. Examples of the thermoplastic resin of this thermoplastic resin compound include PBT (polybutylene terephthalate), PEEK, PEI, AAS, PC, ABS, PPE, LCP, PP, PE, PAI, thermoplastic PI, modified products, alloys, and the like. can give. Among these, it is preferable to use PBT having excellent wear resistance, low dust generation, and dimensional stability.

熱可塑性樹脂に添加される帯電防止性付与材としては、導電性のカーボンファイバー、カーボンウィスカー、金属ファイバー、金属ウィスカー、カーボン粉末、黒鉛粉末、有機導電体(ポリアニリン系、ポリピロール系、ポリチオフェン系、イオン導電体系)があげられる。これらの中でも、パーティクル防止の観点から有機導電体の採用が好ましい。   The antistatic property-imparting material added to the thermoplastic resin includes conductive carbon fiber, carbon whisker, metal fiber, metal whisker, carbon powder, graphite powder, organic conductor (polyaniline, polypyrrole, polythiophene, ion Conductive system). Among these, it is preferable to employ an organic conductor from the viewpoint of preventing particles.

板体1は、平面円形に形成され、その中心部に丸い吸気孔2が厚さ方向に貫通して穿孔されており、この吸気孔2が半導体製造プロセスの前工程で使用されるロボットのバキューム装置にチューブ等を介し接続される。この板体1は、その裏面に吸着パッドの剛性を向上させるリング形の補強リブ3が吸気孔2を中心として突出形成され、この補強リブ3の下端部が外側リブ20の下端部と同じ高さに揃えられる。また、板体1の表面には、内側リブ10と外側リブ20とが同じ高さに揃えて形成され、これら内側リブ10と外側リブ20とが半導体ウェーハWの裏面に隙間なく接触する。   The plate body 1 is formed in a flat circular shape, and a round suction hole 2 is drilled in the center of the plate body 1 in the thickness direction. The suction hole 2 is a vacuum of a robot used in a pre-process of the semiconductor manufacturing process. It is connected to the device via a tube or the like. In the plate 1, a ring-shaped reinforcing rib 3 for improving the rigidity of the suction pad is formed on the back surface so as to protrude from the intake hole 2, and the lower end portion of the reinforcing rib 3 is the same height as the lower end portion of the outer rib 20. Aligned. Further, the inner rib 10 and the outer rib 20 are formed at the same height on the surface of the plate 1, and the inner rib 10 and the outer rib 20 are in contact with the back surface of the semiconductor wafer W without any gap.

内側リブ10は、板体1の表面に突出形成されて吸気孔2を包囲する複数の扇リブ11と、板体1の表面に突出形成されて複数の扇リブ11を外側から包囲する複数の円弧リブ12とを備え、これら複数の扇リブ11と円弧リブ12との間には、空気を流通させる隙間13が区画形成される。複数の扇リブ11は、吸気孔2を中心にして配列され、隣接する扇リブ11と扇リブ11との間には、吸気孔2に連通して空気を流通させる溝14が区画形成されており、平坦な各扇リブ11には、対ロボット用の取付孔15が厚さ方向に穿孔される。   The inner rib 10 protrudes from the surface of the plate body 1 and surrounds the air intake hole 2, and the inner rib 10 protrudes from the surface of the plate body 1 and surrounds the plurality of fan ribs 11 from the outside. An arc rib 12 is provided, and a gap 13 through which air flows is defined between the plurality of fan ribs 11 and the arc rib 12. The plurality of fan ribs 11 are arranged around the air intake hole 2, and a groove 14 that communicates with the air intake hole 2 and distributes air is defined between the adjacent fan ribs 11. The flat fan ribs 11 are provided with attachment holes 15 for the robot in the thickness direction.

複数の円弧リブ12は、吸気孔2を中心に円を描くよう配列され、隣接する平坦な円弧リブ12と円弧リブ12との間には、扇リブ11間の溝14に連通して空気を流通させる溝14が区画形成される。   The plurality of arc ribs 12 are arranged so as to draw a circle around the intake hole 2, and air is communicated between the adjacent flat arc ribs 12 and the arc ribs 12 to the grooves 14 between the fan ribs 11. A groove 14 to be circulated is defined.

外側リブ20は、板体1の周縁部にエンドレスに突出形成されて上下厚さ方向に伸び、平面リング形を呈して補強リブ3や内側リブ10、換言すれば、複数の円弧リブ12を外側から包囲する。この外側リブ20は、その上下端部がそれぞれ平坦に形成され、複数の円弧リブ12との間には、空気を流通させる隙間13がリング形に区画形成される。   The outer rib 20 projects endlessly at the peripheral edge of the plate body 1 and extends in the vertical thickness direction. The outer rib 20 has a flat ring shape, and in other words, the reinforcing rib 3 and the inner rib 10, in other words, the plurality of arc ribs 12 are disposed on the outer side. Siege from. The outer rib 20 has flat upper and lower end portions, and a gap 13 through which air is circulated is formed in a ring shape between the plurality of arc ribs 12.

半導体ウェーハWは、例えば口径300mm(12インチ)の円板にスライスされ、表面に酸化膜が積層されており、前工程で基板収納容器と加工装置との間をロボットで移送されることにより、イオン注入等のドーピング、絶縁膜の形成、リソグラフィ、エッチング等の加工が施される。この半導体ウェーハWの周縁部には、位置決め用のオリフラやノッチが選択的に形成される。   The semiconductor wafer W is sliced into a disk having a diameter of 300 mm (12 inches), for example, and an oxide film is laminated on the surface thereof, and is transferred by a robot between the substrate storage container and the processing apparatus in the previous process, Processing such as doping such as ion implantation, formation of an insulating film, lithography, etching, and the like is performed. Positioning orientation flats and notches are selectively formed on the peripheral edge of the semiconductor wafer W.

上記において、半導体ウェーハ用吸着パッドに半導体ウェーハWの裏面を搭載支持させた後、ロボットのバキューム装置を駆動すれば、半導体ウェーハ用吸着パッドと半導体ウェーハWとの間の空気が複数の隙間13や溝14から吸気孔2を経由して外部に排気され、この排気により半導体ウェーハ用吸着パッドが半導体ウェーハWを隙間13なく吸着保持する。
この際、内側リブ10と外側リブ20とが略同じ高さなので、半導体ウェーハ用吸着パッドから空気が漏れて半導体ウェーハWの吸着に支障を来たすことがない。
In the above description, if the vacuum device of the robot is driven after the back surface of the semiconductor wafer W is mounted and supported on the semiconductor wafer suction pad, the air between the semiconductor wafer suction pad and the semiconductor wafer W becomes a plurality of gaps 13 and The air is exhausted to the outside from the groove 14 via the air intake hole 2, and the semiconductor wafer suction pad sucks and holds the semiconductor wafer W without a gap 13 by this exhaust.
At this time, since the inner rib 10 and the outer rib 20 are substantially the same height, air does not leak from the suction pad for semiconductor wafer, thereby preventing the semiconductor wafer W from being sucked.

上記によれば、金型に溶融した熱可塑性樹脂コンパウンドを射出すれば、金型に熱可塑性樹脂コンパウンドの熱が奪われ、半導体ウェーハ用吸着パッドの露出面に薄いスキン層30が容易に形成されることとなる。したがって、このスキン層30を被覆保護に利用すれば、カーボンファイバーの端部が露出して半導体ウェーハWを削ったり、短いカーボンファイバーが脱落してパーティクルを発生させるという問題を確実に解消することができる。   According to the above, when the molten thermoplastic resin compound is injected into the mold, the heat of the thermoplastic resin compound is taken into the mold, and the thin skin layer 30 is easily formed on the exposed surface of the suction pad for semiconductor wafer. The Rukoto. Therefore, if this skin layer 30 is used for covering protection, it is possible to surely solve the problem that the end of the carbon fiber is exposed and the semiconductor wafer W is shaved, or the short carbon fiber is dropped and generates particles. it can.

また、半導体ウェーハ用吸着パッドを切削加工ではなく、射出成形により製造するので、半導体ウェーハ用吸着パッドの表面が粗れることがなく、しかも、安価かつ大量に製造することができる。具体的には、半導体ウェーハ用吸着パッドを射出成形することにより、従来数十万円だった価格を数万円以下の価格に低減することができる。また、熱可塑性樹脂コンパウンドの体積抵抗値を1E+0〜1E+13(Ω・cm)の範囲とするので、帯電を防止してパーティクルの発生を抑制したり、転写を防止することができる。   Moreover, since the suction pad for semiconductor wafer is manufactured by injection molding instead of cutting, the surface of the suction pad for semiconductor wafer is not roughened, and can be manufactured at low cost and in large quantities. Specifically, by injection-molding the suction pad for a semiconductor wafer, it is possible to reduce the price from several hundred thousand yen to a price of several tens of thousands of yen or less. In addition, since the volume resistance value of the thermoplastic resin compound is in the range of 1E + 0 to 1E + 13 (Ω · cm), it is possible to prevent charging and suppress the generation of particles or transfer.

また、板体1の裏面に補強リブ3を突出形成するので、剛性を付与したり、成形時のひけ(シンクマークともいう)を防いで凹みを防止することが可能になる。また、各扇リブ11の接触面積が各円弧リブ12の接触面積よりも広いので、半導体ウェーハWの姿勢の安定化が大いに期待できる。さらに、板体1の周縁部に外側リブ20を形成する他、板体1の表裏に補強リブ3、扇リブ11、及び円弧リブ12を一体化して強度を高めるので、半導体ウェーハ用吸着パッドの変形防止が大いに期待できる。   Further, since the reinforcing ribs 3 are formed so as to protrude from the back surface of the plate body 1, it is possible to impart rigidity and prevent sinking (also referred to as a sync mark) during molding to prevent dents. Further, since the contact area of each fan rib 11 is wider than the contact area of each arc rib 12, stabilization of the posture of the semiconductor wafer W can be greatly expected. Further, in addition to forming the outer rib 20 on the peripheral edge of the plate body 1, the reinforcing rib 3, the fan rib 11 and the arc rib 12 are integrated on the front and back of the plate body 1 to increase the strength. It can be expected to prevent deformation.

なお、上記実施形態では板体1の裏面側に補強リブ3や外側リブ20を形成したが、特に支障を来たさなければ、補強リブ3を外側リブ20よりも短く低くしたり、補強リブ3を複数にして外側リブ20よりも短く低くしたり、あるいはこれら3・20を省略しても良い。また、半導体ウェーハ用吸着パッドを、アライナーではなく、ロボットのアーム等にセットしても良い。   In the above-described embodiment, the reinforcing rib 3 and the outer rib 20 are formed on the back side of the plate body 1. However, the reinforcing rib 3 may be made shorter or lower than the outer rib 20 or the reinforcing rib unless particularly hindered. 3 may be made shorter and lower than the outer rib 20, or these 3 and 20 may be omitted. Further, the suction pad for semiconductor wafer may be set not on the aligner but on a robot arm or the like.

また、上記実施形態では内側リブ10を、板体1の表面に突出形成されて吸気孔2を包囲する複数の扇リブ11と、板体1の表面に突出形成されて複数の扇リブ11を外側から包囲する複数の円弧リブ12とから形成したが、板体1の表面に突出形成されて吸気孔2を包囲する複数の円弧リブ12と、板体1の表面に突出形成されて複数の円弧リブ12を外側から包囲する複数の扇リブ11とから形成しても良い。さらに、内側リブ10を、板体1の表面に複数突出形成されて外側リブ20に包囲される円柱形のリブとしても良い。   Further, in the above embodiment, the inner rib 10 is formed so as to protrude from the surface of the plate body 1 and surround the intake holes 2, and the plurality of fan ribs 11 formed to protrude from the surface of the plate body 1. Although formed from a plurality of arc ribs 12 surrounding from the outside, a plurality of arc ribs 12 projecting from the surface of the plate body 1 to surround the intake holes 2 and a plurality of arc ribs 12 projecting from the surface of the plate body 1 are formed. You may form from the several fan rib 11 which surrounds the circular arc rib 12 from the outer side. Furthermore, the inner rib 10 may be a cylindrical rib that is formed in a plurality of protrusions on the surface of the plate body 1 and is surrounded by the outer rib 20.

本発明に係る半導体ウェーハ用吸着パッドの実施形態を示す平面説明図である。It is a plane explanatory view showing an embodiment of a suction pad for semiconductor wafers concerning the present invention. 本発明に係る半導体ウェーハ用吸着パッドの実施形態を示す断面説明図である。It is a section explanatory view showing an embodiment of a suction pad for semiconductor wafers concerning the present invention.

符号の説明Explanation of symbols

1 板体
2 吸気孔
3 補強リブ
10 内側リブ
11 扇リブ
12 円弧リブ
13 隙間
14 溝
20 外側リブ
30 スキン層
W 半導体ウェーハ
DESCRIPTION OF SYMBOLS 1 Plate body 2 Air intake hole 3 Reinforcement rib 10 Inner rib 11 Fan rib 12 Arc rib 13 Gap 14 Groove 20 Outer rib 30 Skin layer W Semiconductor wafer

Claims (3)

熱可塑性樹脂コンパウンドを用いて射出成形され、半導体ウェーハを吸着支持する半導体ウェーハ用吸着パッドであって、
剛性を有する板体と、この板体の表面に形成されて半導体ウェーハに接触する内側リブと、この内側リブを包囲して半導体ウェーハに接触する外側リブと、板体の中心部に設けられて内側リブと外側リブとの間に連通する吸気孔とを含んで内側リブと外側リブとを同じ高さに揃え、
板体の裏面に、リング形の補強リブを吸気孔を中心に突出形成し、
内側リブを、板体の表面に突出形成されて吸気孔を包囲する複数の扇リブと、板体の表面に突出形成されて複数の扇リブを包囲する複数の円弧リブとから構成し、複数の扇リブと円弧リブとの間に、気体を流通させる隙間を形成し、隣接する扇リブと扇リブとの間に、吸気孔に連通して気体を流通させる溝を形成し、扇リブの半導体ウェーハに対する接触面積を円弧リブの半導体ウェーハに対する接触面積よりも広くするとともに、扇リブには取付孔を穿孔し、隣接する円弧リブと円弧リブとの間には、扇リブ間の溝に連通して気体を流通させる溝を形成し、
外側リブを、板体の周縁部にエンドレスに突出形成してその下端部を補強リブの高さに揃え、この外側リブと複数の円弧リブとの間には、気体を流通させる隙間を区画形成したことを特徴とする半導体ウェーハ用吸着パッド。
A semiconductor wafer suction pad that is injection-molded using a thermoplastic resin compound and sucks and supports a semiconductor wafer,
A plate having rigidity, an inner rib formed on the surface of the plate and contacting the semiconductor wafer, an outer rib surrounding the inner rib and contacting the semiconductor wafer, and provided at the center of the plate The inner and outer ribs are aligned at the same height, including the intake holes communicating between the inner and outer ribs.
On the back of the plate, a ring-shaped reinforcing rib is formed around the intake hole,
The inner rib is composed of a plurality of fan ribs that protrude from the surface of the plate body and surround the air intake holes, and a plurality of arc ribs that protrude from the surface of the plate body and surround the plurality of fan ribs. The gap between the fan ribs and the arc ribs is formed to allow a gas to flow therethrough, and between the adjacent fan ribs and the fan ribs, a groove is formed to communicate with the air intake holes to flow the gas. The contact area to the semiconductor wafer is made larger than the contact area of the arc rib to the semiconductor wafer, the mounting hole is drilled in the fan rib, and the groove between the adjacent fan ribs communicates with the groove between the fan ribs. To form a groove for flowing gas,
The outer rib is formed to project endlessly at the peripheral edge of the plate body, and its lower end is aligned with the height of the reinforcing rib, and a gap is formed between the outer rib and the plurality of arc ribs for gas flow. A suction pad for semiconductor wafers.
熱可塑性樹脂コンパウンドの熱可塑性樹脂をポリブチレンテレフタレートとした請求項1記載の半導体ウェーハ用吸着パッド。   The suction pad for a semiconductor wafer according to claim 1, wherein the thermoplastic resin of the thermoplastic resin compound is polybutylene terephthalate. 熱可塑性樹脂コンパウンドの帯電防止性付与材を有機導電体とした請求項1記載の半導体ウェーハ用吸着パッド。   The suction pad for a semiconductor wafer according to claim 1, wherein the antistatic property imparting material of the thermoplastic resin compound is an organic conductor.
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