JP4668833B2 - Semiconductor wafer separation apparatus and separation method - Google Patents

Semiconductor wafer separation apparatus and separation method Download PDF

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JP4668833B2
JP4668833B2 JP2006121770A JP2006121770A JP4668833B2 JP 4668833 B2 JP4668833 B2 JP 4668833B2 JP 2006121770 A JP2006121770 A JP 2006121770A JP 2006121770 A JP2006121770 A JP 2006121770A JP 4668833 B2 JP4668833 B2 JP 4668833B2
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semiconductor wafer
support substrate
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JP2007294717A (en
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政夫 住吉
元 安部
孝弘 飯野
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三菱電機株式会社
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この発明は、半導体装置及びその製造方法において、熱可塑性接着剤により支持基板に貼付けた半導体ウエハを支持基板から分離する半導体ウエハ分離装置及び分離方法に関するものである。   The present invention relates to a semiconductor wafer separation apparatus and a separation method for separating a semiconductor wafer attached to a support substrate with a thermoplastic adhesive from the support substrate in a semiconductor device and a manufacturing method thereof.
一部の半導体装置の製造方法においては、半導体ウエハの表面に形成したデバイスで発生した熱を効率よく裏面側へ逃がすことで放熱効果を高めるため、また、高周波デバイス等では接地電位の安定性向上のため、また、レーザーダイオードなどでは閾値電流低減化のために、表面のデバイスパターンを形成した後、半導体ウエハ厚を例えば100μm程度まで薄板化する必要がある。このようにデバイスパターンを形成した半導体ウエハを薄板化する工程や、薄板化したに後裏面側に電極を形成する工程では、半導体ウエハの割れを防止するために、ワックスなどの熱可塑性接着剤を用いて1mm程度の補強用の支持基板に半導体ウエハを貼付けるなどしている。   In some semiconductor device manufacturing methods, heat generated by the device formed on the surface of the semiconductor wafer is efficiently released to the back side to enhance the heat dissipation effect, and for high-frequency devices, etc., ground potential stability is improved. Therefore, in order to reduce the threshold current in a laser diode or the like, it is necessary to reduce the thickness of the semiconductor wafer to, for example, about 100 μm after forming the device pattern on the surface. In the process of thinning the semiconductor wafer on which the device pattern is formed in this way, and in the process of forming the electrode on the back side after the thinning, a thermoplastic adhesive such as wax is used to prevent the semiconductor wafer from cracking. For example, a semiconductor wafer is attached to a support substrate for reinforcement of about 1 mm.
上記のような支持基板に接着された半導体ウエハを、支持基板から分離するために、従来、溶剤を用いて接着剤を溶解する浸漬方式(例えば、特許文献1参照)、または、加熱溶融して分離する加熱方式(例えば特許文献2)が採用されている。   In order to separate the semiconductor wafer bonded to the support substrate as described above from the support substrate, conventionally, a dipping method in which an adhesive is dissolved using a solvent (see, for example, Patent Document 1) or heating and melting. A heating system for separation (for example, Patent Document 2) is employed.
しかしながら、接着剤を溶解する浸漬方式においては溶解に要する時間が長いために処理効率が低く、また、加熱溶融して分離する加熱方式においては分離の際に生じる半導体ウエハの応力が大きいために半導体ウエハが割れるなどの問題がある。   However, in the dipping method for dissolving the adhesive, the processing time is low due to the long time required for dissolution, and in the heating method in which it is heated and melted and separated, the stress of the semiconductor wafer generated during the separation is large, so that the semiconductor There is a problem that the wafer breaks.
これらを解決するために、浸漬方式では支持基板に孔を設けることで溶解時間の短縮を図る方法(例えば、特許文献3、特許文献4参照)が開示され、加熱方式では接着剤を溶融した後、半導体ウエハ平面と平行な方向にスライドして分離することで半導体ウエハ割れをなくす方法が開示されている(例えば、特許文献5参照)。   In order to solve these problems, a method for shortening the melting time by disposing a hole in the support substrate is disclosed in the immersion method (see, for example, Patent Document 3 and Patent Document 4). After the adhesive is melted in the heating method, A method of eliminating cracks in a semiconductor wafer by sliding and separating in a direction parallel to the plane of the semiconductor wafer is disclosed (for example, see Patent Document 5).
特開2002−185109号公報(第2−4頁)JP 2002-185109 A (page 2-4) 特開平6−268051号公報(第4−5頁、図1)JP-A-6-268051 (page 4-5, FIG. 1) 特開平5−82491号公報(第2−3頁、図1)Japanese Patent Application Laid-Open No. 5-82491 (page 2-3, FIG. 1) 特開2001−185519号公報(第5−6頁、図1)JP 2001-185519 A (Page 5-6, FIG. 1) 特開2003−197724号公報(第5−6頁、図1)Japanese Patent Laying-Open No. 2003-197724 (page 5-6, FIG. 1)
半導体ウエハの薄板加工後の裏面電極形成工程において、例えば化学めっきのように選択性のない成膜工程があると、半導体ウエハだけでなく、接着剤の側面や支持基板表面にも固体膜が形成される。さらに、浸透性の高いめっき液を使った場合には、電極形成中に生じた僅かな接着剤の亀裂や溶解した隙間のように露出していない部分までめっきされて固体膜を形成するため、これら固体膜は物理的にも化学的にも容易には除去できない。   In the backside electrode formation process after thin processing of a semiconductor wafer, if there is a non-selective film formation process such as chemical plating, a solid film is formed not only on the semiconductor wafer but also on the side surface of the adhesive and on the support substrate surface. Is done. Furthermore, in the case of using a highly permeable plating solution, in order to form a solid film by plating up to a portion that is not exposed, such as a slight adhesive crack or melted gap generated during electrode formation, These solid films cannot be easily removed physically or chemically.
上記特許文献5に開示された方法では、これらの固体膜がある状態で、スライドして半導体ウエハを分離しようとするため、半導体ウエハの貼付け側の表面を、支持基板側に残った固体膜がキズつけてしまうという問題がある。   In the method disclosed in Patent Document 5, since the semiconductor wafer is slid and separated in a state where these solid films are present, the solid film remaining on the support substrate side is formed on the surface of the semiconductor wafer attached side. There is a problem of scratching.
上記特許文献3あるいは特許文献4に開示された方法では、固体膜によってキズをつけることはないものの、支持基板に孔を設ける工夫をしてもなお、加熱方式に比べて処理時間が格段に長いという問題がある。   Although the method disclosed in Patent Document 3 or Patent Document 4 is not scratched by the solid film, the processing time is significantly longer than that of the heating method even if a hole is provided in the support substrate. There is a problem.
本発明は、上記特許文献5の加熱方式よる短時間処理という特徴を維持しつつ、半導体ウエハ表面に全くキズを生じさせることなく、支持基板から半導体ウエハを分離することを目的としている。   An object of the present invention is to separate a semiconductor wafer from a supporting substrate without causing any scratch on the surface of the semiconductor wafer while maintaining the feature of short-time treatment by the heating method of Patent Document 5 described above.
本発明に係る半導体ウエハ分離装置は、
支持基板と、上記支持基板に熱可塑性接着剤を用いて接着され、且つ周縁に付着物が形成された半導体ウエハとを挟持し、上記熱可塑性接着剤を加熱溶融する加熱手段を有するとともに、上記支持基板及び半導体ウエハそれぞれを保持する機構を有する一対の保持機構、
上記加熱手段によって上記熱可塑性接着剤を加熱溶融した状態で、上記熱可塑性接着剤による接着面と平行に一定量、上記一対の保持機構のいずれか一方をスライドさせ、上記支持基板面上における、上記スライド方向の片方側の一部の接着面を露出させ、上記支持基板面上に露出した接着面の外周縁部にある付着物を除去した後、上記一方の保持機構をスライドさせた方向と反対方向にスライドさせて上記支持基板と上記半導体ウエハとを分離する水平方向駆動機構
上記支持基板の接着側の面に露出した一部の接着面の周縁部にある付着物を除去する除去機構、
を備えたものである。
A semiconductor wafer separation apparatus according to the present invention is:
Between the support substrate and a semiconductor wafer adhered to the support substrate using a thermoplastic adhesive and having a deposit formed on the periphery thereof, and having a heating means for heating and melting the thermoplastic adhesive, A pair of holding mechanisms having mechanisms for holding the support substrate and the semiconductor wafer,
In a state where the thermoplastic adhesive is heated and melted by the heating means, a certain amount is slid parallel to the adhesive surface by the thermoplastic adhesive, and one of the pair of holding mechanisms is slid on the support substrate surface. A direction in which the one holding mechanism is slid after exposing a part of the adhesive surface on one side in the sliding direction and removing the deposit on the outer peripheral edge of the adhesive surface exposed on the support substrate surface. A horizontal driving mechanism that slides in the opposite direction to separate the support substrate and the semiconductor wafer ;
A removal mechanism for removing deposits on the peripheral edge of a part of the adhesion surface exposed on the adhesion side surface of the support substrate;
It is equipped with.
本発明に係る半導体ウエハ分離方法は、
支持基板と、上記支持基板に熱可塑性接着剤を用いて接着された半導体ウエハとを挟持する工程、
上記熱可塑性接着剤を加熱溶融する工程、
上記熱可塑性接着剤による接着面と平行に一定量、上記支持基板または上記半導体ウエハのいずれか一方をスライドさせて上記支持基板面上に接着面の一部を露出させる工程、
上記露出させた接着面の付着物を除去する工程、
上記スライドさせた一方をスライドさせた方向と反対方向にスライドさせて上記支持基板と上記半導体ウエハとを分離する工程、
を備えたものである。
A semiconductor wafer separation method according to the present invention includes:
Sandwiching a support substrate and a semiconductor wafer bonded to the support substrate using a thermoplastic adhesive;
A step of heating and melting the thermoplastic adhesive,
A step of sliding either one of the support substrate or the semiconductor wafer to expose a part of the adhesion surface on the support substrate surface in a certain amount parallel to the adhesion surface by the thermoplastic adhesive;
Removing the adhered matter on the exposed adhesive surface;
A step of separating the supporting substrate and the semiconductor wafer by sliding in the opposite direction to the sliding direction of the one slid;
It is equipped with.
本発明に係る半導体ウエハ分離装置及び分離方法によれば、半導体ウエハの周縁に付着物がある場合、半導体ウエハの表面に全くキズを生じさせることなく、半導体ウエハを短時間で支持基板から分離することができる。   According to the semiconductor wafer separation apparatus and the separation method of the present invention, when there is a deposit on the periphery of the semiconductor wafer, the semiconductor wafer is separated from the support substrate in a short time without causing any scratch on the surface of the semiconductor wafer. be able to.
実施の形態1.
図1は、本発明に係る半導体ウエハ分離方法の実施の形態1を示す図であり、図1(a)〜(e)それぞれの上部に斜視図、下部に断面図を示している。
Embodiment 1 FIG.
FIG. 1 is a diagram showing a first embodiment of a semiconductor wafer separating method according to the present invention, and a perspective view is shown at the top of each of FIGS. 1 (a) to 1 (e), and a cross-sectional view is shown at the bottom.
図1(a)は初期状態を示し、支持基板3と半導体ウエハ1は、ワックスのような熱可塑性接着剤2で固定されており、半導体ウエハ周縁にめっきなどにより成長した固体膜(付着物)4がある。   FIG. 1A shows an initial state, in which the support substrate 3 and the semiconductor wafer 1 are fixed with a thermoplastic adhesive 2 such as wax, and a solid film (adhesive material) grown by plating or the like on the periphery of the semiconductor wafer. There are four.
まず、図1(b)に示すように、熱可塑性接着剤2を加熱溶融した状態で一旦半導体ウエハ1を支持基板3に対して少量スライドことで、周縁部の片側方向の固体膜4を露出させる。この時のスライド量は、半導体ウエハ1の下に入る固体膜4が、半導体ウエハ1に形成されたデバイス領域にかからないだけの量であることが望ましい。   First, as shown in FIG. 1B, in a state where the thermoplastic adhesive 2 is heated and melted, the semiconductor wafer 1 is once slid relative to the support substrate 3 to expose the solid film 4 in one side direction of the peripheral portion. Let It is desirable that the sliding amount at this time is such that the solid film 4 entering under the semiconductor wafer 1 does not cover the device region formed on the semiconductor wafer 1.
次に、図1(c)に示すように、露出した固体膜4を、例えば、切削具やメスなどのへら状板5で削り取る。図示しないが、削りクズは拭き取る、または、吸引機で取り除くのが好ましい。図1(d)は、固体膜4を除去した後の状態を示す。   Next, as shown in FIG. 1C, the exposed solid film 4 is scraped off with a spatula plate 5 such as a cutting tool or a knife. Although not shown, it is preferable to wipe off the scraps or remove them with a suction machine. FIG. 1D shows a state after the solid film 4 is removed.
最後に、図1(e)に示すように、スライドした方向とは反対(固体膜を除去した側)の方向に、半導体ウエハ1をスライドさせることで支持基板3と半導体ウエハ1とを分離する。   Finally, as shown in FIG. 1E, the support substrate 3 and the semiconductor wafer 1 are separated by sliding the semiconductor wafer 1 in the direction opposite to the sliding direction (side from which the solid film is removed). .
図2及び図3は、図1に示した半導体ウエハ分離方法に用いる半導体ウエハ分離装置を示す断面図(a)及び斜視図(b)である。図2に示したように、支持基板3に熱可塑性接着剤2で半導体ウエハ1が固定された支持基板3を上下方向から保持する保持機構14,15を備えている。   2 and 3 are a cross-sectional view (a) and a perspective view (b) showing the semiconductor wafer separation apparatus used in the semiconductor wafer separation method shown in FIG. As shown in FIG. 2, holding mechanisms 14 and 15 are provided to hold the support substrate 3 on which the semiconductor wafer 1 is fixed to the support substrate 3 with the thermoplastic adhesive 2 from above and below.
保持機構14,15は、図示していないヒータ等の加熱手段を内包し、支持基板3及び半導体ウエハ1を保持する機構として保持面の吸着溝と側面に連通する排気孔7,11を有するヒートブロック6,10と、ヒートブロック6,10の側面において排気孔7,11に、図示していない真空装置のチューブ9,12を接続するための接続具8,12を備えており、保持機構14,15と真空装置は上下とも各々独立に開閉制御できるようにしている。なお、半導体ウエハ1及び支持基板3との脱離性をよくするために、例えば、ドライエアでパフする機能を有していることが望ましい。   The holding mechanisms 14 and 15 include heating means such as a heater (not shown) and have a suction groove on the holding surface and exhaust holes 7 and 11 communicating with the side surfaces as a mechanism for holding the support substrate 3 and the semiconductor wafer 1. Connecting means 8 and 12 for connecting tubes 9 and 12 of a vacuum device (not shown) to the exhaust holes 7 and 11 on the side surfaces of the blocks 6 and 10 and the heat blocks 6 and 10 are provided. 15 and the vacuum device can be controlled to be opened and closed independently from each other. In order to improve the detachability between the semiconductor wafer 1 and the support substrate 3, for example, it is desirable to have a function of puffing with dry air.
上下の保持機構14、15を用いて、半導体ウエハ1と支持基板3を挟持し、排気孔7,11を真空排気して半導体ウエハ1と支持基板3を真空吸着しながら、内包するヒータの温度を上昇させて接着剤2を加熱・溶融する。その後、図3に示したように、上下の保持機構14、15の少なくともどちらか一方を、水平方向駆動機構24で水平方向に少量スライドさせる。半導体ウエハ1または支持基板3のスライドは、作業者による手作業でも可能であるが、水平方向への水平方向駆動機構24に加えて垂直方向への垂直方向駆動機構を備え、自動機化されていることが望ましい。   Using the upper and lower holding mechanisms 14 and 15, the semiconductor wafer 1 and the support substrate 3 are sandwiched, the exhaust holes 7 and 11 are evacuated and the semiconductor wafer 1 and the support substrate 3 are vacuum-adsorbed, and the temperature of the heater included Is raised to heat and melt the adhesive 2. After that, as shown in FIG. 3, at least one of the upper and lower holding mechanisms 14 and 15 is slid in a small amount in the horizontal direction by the horizontal driving mechanism 24. Although the semiconductor wafer 1 or the support substrate 3 can be slid manually by an operator, it is equipped with a vertical driving mechanism in the vertical direction in addition to the horizontal driving mechanism 24 in the horizontal direction, and is automated. It is desirable.
水平方向に少量スライドさせた後、図1(c)に示したように、露出した固体膜をへら状板5で除去し、露出した固体膜を除去した後、スライド方向とは反対(固体膜を除去した側)の方向に、スライドさせた方の上下の保持機構14を水平方向駆動機構24で水平にスライドさせることで支持基板3と半導体ウエハ1とを分離する。   After sliding in a small amount in the horizontal direction, as shown in FIG. 1 (c), the exposed solid film is removed with a spatula plate 5, and after removing the exposed solid film, the direction opposite to the sliding direction (solid film) The support substrate 3 and the semiconductor wafer 1 are separated by horizontally sliding the upper and lower holding mechanisms 14, which are slid in the direction of the side from which the substrate is removed, by the horizontal driving mechanism 24.
本実施の形態1によれば、接着剤2を加熱・溶融して少量、支持基板3と半導体ウエハ1とをスライドさせて固体膜4を露出させ、半導体ウエハ1表面をキズつける固体膜を除去した後に、固体膜4を除去した側に半導体ウエハ1をスライドさせて分離するため、半導体ウエハ1表面に全くキズをつけることなく短時間で分離することができる。   According to the first embodiment, a small amount of the adhesive 2 is heated and melted to slide the support substrate 3 and the semiconductor wafer 1 to expose the solid film 4, and the solid film that scratches the surface of the semiconductor wafer 1 is removed. After that, the semiconductor wafer 1 is slid and separated on the side from which the solid film 4 is removed, so that the semiconductor wafer 1 can be separated in a short time without scratching the surface.
実施の形態2.
図4は、本実施の形態2を示す斜視図である。本実施の形態2では、実施の形態1で説明した半導体ウエハ分離方法において用いたへら状板5に代えて、図4に示すように、先端に砥石16を取り付けたモータ17を用いて固体膜4を除去する。
Embodiment 2. FIG.
FIG. 4 is a perspective view showing the second embodiment. In the second embodiment, instead of the spatula plate 5 used in the semiconductor wafer separation method described in the first embodiment, as shown in FIG. 4, a motor 17 having a grindstone 16 attached to the tip is used to form a solid film. 4 is removed.
また、砥石17に限らず、例えば、ワイヤーブラシや金属トリマーなどを用いた回転体であればよい。   Moreover, it is not limited to the grindstone 17 and may be a rotating body using, for example, a wire brush or a metal trimmer.
このように回転体で固体膜を除去する場合、削りクズが飛散しやすいので、その対策として回転体へのフードの取付けや、エアーノズルを用いたエアーカーテンを設けるなどして飛散異物を遮蔽し、吸引ノズルを用いて異物を吸引除去する。   In this way, when removing the solid film with a rotating body, scraping scraps are likely to scatter, so as a countermeasure against this, shield the scattered foreign matter by attaching a hood to the rotating body or installing an air curtain using an air nozzle. The foreign matter is sucked and removed using a suction nozzle.
本実施の形態2によれば、刃飛びなどの不具合がなく、固体膜を短時間で確実に除去することができるため、半導体ウエハ1表面に全くキズをつけることなく短時間で半導体ウエハ1と支持基板3とを分離することができることに加えて、製品スループットを向上し、品質維持管理が容易になる。   According to the second embodiment, since there is no problem such as blade skipping and the solid film can be surely removed in a short time, the semiconductor wafer 1 and the semiconductor wafer 1 can be removed in a short time without scratching the surface of the semiconductor wafer 1 at all. In addition to being able to separate from the support substrate 3, the product throughput is improved and quality maintenance management is facilitated.
実施の形態3.
図5は、本実施の形態3を示す斜視図であり、図6は、図5における粘着除去機構18の内部構造を示す断面図である。
Embodiment 3 FIG.
FIG. 5 is a perspective view showing the third embodiment, and FIG. 6 is a cross-sectional view showing the internal structure of the adhesion removing mechanism 18 in FIG.
本実施の形態3では、実施の形態1で説明した半導体ウエハ分離方法において用いたへら状板5に代えて、図5に示したように、粘着ローラ19を用い、粘着ローラ19の粘着力により固体膜4を引きはがして除去する。   In the third embodiment, instead of the spatula plate 5 used in the semiconductor wafer separation method described in the first embodiment, an adhesive roller 19 is used as shown in FIG. The solid film 4 is peeled off and removed.
また、粘着ローラ19に限らず、粘着テープなど、粘着材を表に有する部材であればよい。   Moreover, it is not limited to the adhesive roller 19, and any member having an adhesive material on the front surface such as an adhesive tape may be used.
粘着ローラ19を使用する場合は、図6に示したように、粘着ローラ19の回転と同期して逆方向に回転する転写ローラ20と、転写ローラ20の回転によって強粘着シート21を供給する供給ローラ22を設ける。粘着ローラ19は、供給ローラ22から供給される常に新鮮な強粘着シート21によってローラ表面を自己清掃する機能を備えている。   When the adhesive roller 19 is used, as shown in FIG. 6, the transfer roller 20 that rotates in the reverse direction in synchronization with the rotation of the adhesive roller 19 and the supply that supplies the strong adhesive sheet 21 by the rotation of the transfer roller 20. A roller 22 is provided. The adhesive roller 19 has a function of self-cleaning the roller surface with a constantly strong strong adhesive sheet 21 supplied from the supply roller 22.
本実施の形態3によれば、削りクズを飛散させることなく固体膜の除去が可能になり、半導体ウエハ1への異物付着や装置内の汚れを防止するとともに、半導体ウエハ1表面に全くキズをつけることなく短時間で半導体ウエハ1と支持基板3とを分離することができる。   According to the third embodiment, it is possible to remove the solid film without scattering scraping scraps, preventing foreign matter adhesion to the semiconductor wafer 1 and contamination in the apparatus, and scratching the surface of the semiconductor wafer 1 at all. The semiconductor wafer 1 and the support substrate 3 can be separated in a short time without being attached.
本発明に係る半導体ウエハ分離装置及び分離方法は、半導体装置及びその製造方法において、熱可塑性接着剤により支持基板に貼付けた半導体ウエハを傷つけることなく支持基板から分離するのに利用できる。   INDUSTRIAL APPLICABILITY The semiconductor wafer separating apparatus and the separating method according to the present invention can be used in a semiconductor device and a manufacturing method thereof for separating a semiconductor wafer attached to a supporting substrate with a thermoplastic adhesive without damaging it.
本発明に係る半導体ウエハ分離方法の実施の形態1を示す図である。It is a figure which shows Embodiment 1 of the semiconductor wafer separation method which concerns on this invention. 図1に示した半導体ウエハ分離方法に用いる半導体ウエハ分離装置を示す断面図(a)及び斜視図(b)である。It is sectional drawing (a) and perspective view (b) which show the semiconductor wafer separation apparatus used for the semiconductor wafer separation method shown in FIG. 図1に示した半導体ウエハ分離方法に用いる半導体ウエハ分離装置を示す断面図(a)及び斜視図(b)である。It is sectional drawing (a) and perspective view (b) which show the semiconductor wafer separation apparatus used for the semiconductor wafer separation method shown in FIG. 実施の形態2を示す斜視図である。FIG. 6 is a perspective view showing a second embodiment. 実施の形態3を示す斜視図である。FIG. 6 is a perspective view showing a third embodiment. 図5における粘着除去機構18の内部構造を示す断面図である。It is sectional drawing which shows the internal structure of the adhesion removal mechanism 18 in FIG.
符号の説明Explanation of symbols
1 半導体ウエハ、2 接着剤、3 支持基板、4 固体膜、5 へら状板、
6 上部ヒートブロック、7 排気孔、8 接続具、9 チューブ、
10 下部ヒートブロック、11 排気孔、12 接続具、13 チューブ、
14 上部保持機構、15 下部保持機構、16 砥石、17 モータ、
18 粘着除去機構、19 粘着ローラ、20 転写ローラ、21 強粘着シート、
22 供給ローラ、23 カバー、24 水平方向駆動機構。
1 semiconductor wafer, 2 adhesive, 3 support substrate, 4 solid film, 5 spatula plate,
6 Upper heat block, 7 Exhaust hole, 8 Connector, 9 Tube,
10 Lower heat block, 11 Exhaust hole, 12 Connector, 13 Tube,
14 upper holding mechanism, 15 lower holding mechanism, 16 grindstone, 17 motor,
18 adhesive removal mechanism, 19 adhesive roller, 20 transfer roller, 21 strong adhesive sheet,
22 Supply roller, 23 Cover, 24 Horizontal drive mechanism.

Claims (5)

  1. 支持基板と、上記支持基板に熱可塑性接着剤を用いて接着され、且つ周縁に付着物が形成された半導体ウエハとを挟持し、上記熱可塑性接着剤を加熱溶融する加熱手段を有するとともに、上記支持基板及び半導体ウエハそれぞれを保持する機構を有する一対の保持機構、
    上記加熱手段によって上記熱可塑性接着剤を加熱溶融した状態で、上記熱可塑性接着剤による接着面と平行に一定量、上記一対の保持機構のいずれか一方をスライドさせ、上記支持基板面上における、上記スライド方向の片方側の一部の接着面を露出させ、上記支持基板面上に露出した接着面の外周縁部にある付着物を除去した後、上記一方の保持機構をスライドさせた方向と反対方向にスライドさせて上記支持基板と上記半導体ウエハとを分離する水平方向駆動機構
    上記支持基板の接着側の面に露出した一部の接着面の周縁部にある付着物を除去する除去機構、
    を備えたことを特徴とする半導体ウエハ分離装置。
    Between the support substrate and a semiconductor wafer adhered to the support substrate using a thermoplastic adhesive and having a deposit formed on the periphery thereof, and having a heating means for heating and melting the thermoplastic adhesive, A pair of holding mechanisms having mechanisms for holding the support substrate and the semiconductor wafer,
    In a state where the thermoplastic adhesive is heated and melted by the heating means, a certain amount is slid parallel to the adhesive surface by the thermoplastic adhesive, and one of the pair of holding mechanisms is slid on the support substrate surface. A direction in which the one holding mechanism is slid after exposing a part of the adhesive surface on one side in the sliding direction and removing the deposit on the outer peripheral edge of the adhesive surface exposed on the support substrate surface. A horizontal driving mechanism that slides in the opposite direction to separate the support substrate and the semiconductor wafer ;
    A removal mechanism for removing deposits on the peripheral edge of a part of the adhesion surface exposed on the adhesion side surface of the support substrate;
    A semiconductor wafer separating apparatus comprising:
  2. 上記除去手段が、へら状板であることを特徴とする請求項1記載の半導体ウエハ分離装置。 2. The semiconductor wafer separating apparatus according to claim 1, wherein the removing means is a spatula-like plate.
  3. 上記除去手段が、回転する砥石、ブラシまたは金属トリマであることを特徴とする請求項1記載の半導体ウエハ分離装置。 2. The semiconductor wafer separating apparatus according to claim 1, wherein the removing means is a rotating grindstone, a brush or a metal trimmer.
  4. 上記除去手段が、粘着材を表面に有する部材であることを特徴とする、請求項1記載の半導体ウエハ分離装置。 2. The semiconductor wafer separating apparatus according to claim 1, wherein the removing means is a member having an adhesive material on a surface thereof.
  5. 支持基板と、上記支持基板に熱可塑性接着剤を用いて接着された半導体ウエハとを挟持する工程、
    上記熱可塑性接着剤を加熱溶融する工程、
    上記熱可塑性接着剤による接着面と平行に一定量、上記支持基板または上記半導体ウエハのいずれか一方をスライドさせて上記支持基板面上に接着面の一部を露出させる工程、 上記露出させた接着面の付着物を除去する工程、
    上記スライドさせた一方をスライドさせた方向と反対方向にスライドさせて上記支持基板と上記半導体ウエハとを分離する工程、
    を備えたことを特徴とする半導体ウエハ分離方法。
    Sandwiching a support substrate and a semiconductor wafer bonded to the support substrate using a thermoplastic adhesive;
    A step of heating and melting the thermoplastic adhesive,
    A step of sliding either one of the support substrate or the semiconductor wafer and exposing a part of the adhesion surface on the support substrate surface in parallel with the adhesion surface by the thermoplastic adhesive, the exposed adhesion Removing the deposits on the surface,
    A step of separating the supporting substrate and the semiconductor wafer by sliding in the opposite direction to the sliding direction of the one slid;
    A method for separating a semiconductor wafer, comprising:
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