JP4629328B2 - 光電検出装置及びその製造方法 - Google Patents
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- 238000001514 detection method Methods 0.000 title claims abstract description 60
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- 238000005530 etching Methods 0.000 claims abstract description 7
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- 238000001459 lithography Methods 0.000 claims abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 2
- 239000010410 layer Substances 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 8
- 239000012777 electrically insulating material Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000429 assembly Methods 0.000 claims description 2
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- 238000000034 method Methods 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
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- 230000005684 electric field Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
2 下部電極
3 感光性材料層
4 光透過性上部電極
5 内部検出器領域
6 絶縁区域(電気的絶縁材料層)
8 電気的導電性材料
9 金属被覆層
Claims (9)
- 絶縁基板(1)上に検出要素のマトリックスを備えた光電検出装置であって、
前記検出要素のそれぞれは、下部電極(2)と感光性材料層(3)と光透過性上部電極(4)とからなる積層体を備え、前記上部電極(4)及び前記感光性材料層(3)は、全ての前記検出要素に共通であり、前記下部電極(2)のそれぞれは、検知回路に対して互いに独立して接続されている、光電検出装置において、
複数の絶縁区域(6)は、前記絶縁基板(1)上に前記複数の下部電極(2)に対応して個別に堆積されて形成され、
前記下部電極(2)は、前記絶縁区域(6)上にそれぞれ位置しており;
前記上部電極(4)は、平らではなく、かつその上さらに、前記下部電極の高さより低い位置に到達するまで、2つの隣接する前記絶縁区域(6)の間に挿入されている;
ことを特徴とする光電検出装置。 - 絶縁基板(1)上に検出要素のマトリックスを備えた光電検出装置であって、
前記検出要素のそれぞれは、下部電極(2)と感光性材料層(3)と光透過性上部電極(4)とからなる積層体を備え、前記上部電極(4)及び前記感光性材料層(3)は、全ての前記検出要素に共通であり、前記下部電極(2)のそれぞれは、検知回路に対して互いに独立して接続されている、光電検出装置において、
前記絶縁基板(1)には、複数の絶縁区域(6)が前記複数の下部電極(2)に対応して突状に個別に形成され、
前記下部電極(2)は、前記絶縁基板(1)の前記絶縁区域上にそれぞれ位置しており、
前記上部電極(4)は、平らではなく、かつその上さらに、前記下部電極の高さより低い位置に到達するまで、2つの隣接する前記絶縁区域(6)の間に挿入されている;
ことを特徴とする光電検出装置。 - 請求項1又は2記載の光電検出装置において、
前記絶縁基板(1)は、信号処理回路上に堆積された絶縁材料層からなることを特徴とする光電検出装置。 - 請求項1〜3のいずれか一項に記載において、
前記感光性材料層(3)が、2つの隣接する前記絶縁区域(6)の間で、前記絶縁基板(1)に対して略垂直方向に互いに向かい合うように延在し、それによって、前記2つの隣接する絶縁区域(6)における電気力線が互いに反対の方向性を有していることを特徴とする光電検出装置。 - 請求項1から4のいずれか一項に記載の光電検出装置において、
前記光電検出装置は、PINダイオード、NIPダイオード、PIダイオード、NIダイオード、IPダイオード、又はINダイオードから構成されていることを特徴とする光電検出装置。 - 請求項1から4のいずれか一項に記載の光電検出装置において、
前記感光性材料層(3)は、シリコンをベースにしていることを特徴とする光電検出装置。 - 請求項1から4のいずれか一項に記載の光電検出装置において、
前記感光性材料層(3)は、水素、ゲルマニウム、又は炭素と混ぜられたシリコンをベースにしていることを特徴とする光電検出装置。 - 絶縁基板(1)上に堆積され、検知回路に結び付けられた検出要素のマトリックスからなる検出回路の製造方法であって、
前記検出要素のそれぞれに対して、前記絶縁基板を通過する導体によって前記検知回路へ接続された金属被覆層(9)を形成する段階と;
前記金属被覆層(9)を囲むように、前記絶縁基板上にマトリックス状の区域を形成する電気的絶縁材料層(6)を堆積する段階と;
前記金属被覆層(9)に到達するまで前記電気的絶縁材料層(6)にホールを形成し、このようにして形成された前記ホールを電気的導電性材料(8)で充填することで該電気的導電性材料が前記金属被覆層(9)と電気的に接触するようになる段階と;
前記電気的絶縁材料層(6)の上部表面上に、下部電極となるように前記電気的導電性材料(8)と電気的に接触する電極(2)を堆積する段階と;
前記電気的絶縁材料層及び前記下部電極からなる複数の基本組立体のそれぞれの形状に実質的に従って、このようにして形成された全てのマトリックス上に単一層の感光性材料層(3)を堆積する段階と;
同様にまた前記電気的絶縁材料層(6)の形状に従って、このようにして形成された積層体上に単一層の光透過性上部電極(4)を堆積し、その結果このようにして形成された2つの隣接する前記区域の間にある内部ピクセル空間で前記光透過性上部電極が前記下部電極の高さよりも低い位置に下がる段階と;
からなることを特徴とする検出回路の製造方法。 - 絶縁基板(1)上に堆積され、検知回路に結び付けられた検出要素のマトリックスからなる検出回路の製造方法であって、
導電性金属層を堆積し、導体によって前記導電性金属層を前記検知回路へ接続する段階と;
リソグラフィーを実施して前記導電性金属層をエッチングし、個別化された下部電極を形成する段階と;
前記絶縁基板の個別化された下部電極を有していない部分に深いエッチングを実施する段階と;
前記絶縁基板がエッチングされた箇所を含めて前記絶縁基板及び前記下部電極上に単一層の感光性材料層を堆積し、その結果前記感光性材料層がこのようにして形成された前記絶縁基板及び前記下部電極の表面形状に従う段階と;
前記絶縁基板がエッチングされた箇所を含めて単一層の光透過性上部電極を堆積し、その結果前記光透過性上部電極が前記下部電極の高さよりも低い位置まで下がるように、前記上部電極が前記絶縁基板の深くエッチングされた空間である内部ピクセル空間に挿入される段階と;
からなることを特徴とする検出回路の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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FR0215023A FR2848027B1 (fr) | 2002-11-29 | 2002-11-29 | Dispositif de detection photo-electrique et procede pour sa realisation |
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JP4629328B2 true JP4629328B2 (ja) | 2011-02-09 |
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US (1) | US7049673B2 (ja) |
EP (1) | EP1434270B1 (ja) |
JP (1) | JP4629328B2 (ja) |
AT (1) | ATE336078T1 (ja) |
DE (1) | DE60307408T2 (ja) |
FR (1) | FR2848027B1 (ja) |
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KR100837556B1 (ko) * | 2007-03-19 | 2008-06-12 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
US20100044676A1 (en) | 2008-04-18 | 2010-02-25 | Invisage Technologies, Inc. | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals |
EP2667412A1 (en) * | 2007-04-18 | 2013-11-27 | Invisage Technologies, INC. | Materials, systems and methods for optoelectronic devices |
US8525287B2 (en) | 2007-04-18 | 2013-09-03 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
KR100877293B1 (ko) * | 2007-08-31 | 2009-01-07 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
KR100920542B1 (ko) * | 2007-12-24 | 2009-10-08 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
US8203195B2 (en) | 2008-04-18 | 2012-06-19 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
FR2944140B1 (fr) | 2009-04-02 | 2011-09-16 | Commissariat Energie Atomique | Dispositif de detection d'image electronique |
WO2011156507A1 (en) | 2010-06-08 | 2011-12-15 | Edward Hartley Sargent | Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance |
CN113188655A (zh) * | 2021-04-09 | 2021-07-30 | 广州市艾佛光通科技有限公司 | 基于体声波的光传感器及其制备方法 |
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JPH0883895A (ja) * | 1994-09-14 | 1996-03-26 | Toshiba Corp | 固体撮像素子 |
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EP0517208A1 (en) * | 1991-06-05 | 1992-12-09 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US6448579B1 (en) * | 2000-12-06 | 2002-09-10 | L.G.Philips Lcd Co., Ltd. | Thin film transistor array substrate for liquid crystal display and a method for fabricating the same |
US6396118B1 (en) * | 2000-02-03 | 2002-05-28 | Agilent Technologies, Inc. | Conductive mesh bias connection for an array of elevated active pixel sensors |
US20040113220A1 (en) * | 2000-12-21 | 2004-06-17 | Peter Rieve | Optoelectronic component for conversion electromagnetic radiation into an intensity-dependent photocurrent |
US6759262B2 (en) * | 2001-12-18 | 2004-07-06 | Agilent Technologies, Inc. | Image sensor with pixel isolation system and manufacturing method therefor |
US6798033B2 (en) * | 2002-08-27 | 2004-09-28 | E-Phocus, Inc. | Photoconductor-on-active-pixel (POAP) sensor utilizing a multi-layered radiation absorbing structure |
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- 2002-11-29 FR FR0215023A patent/FR2848027B1/fr not_active Expired - Fee Related
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- 2003-11-14 EP EP03104193A patent/EP1434270B1/fr not_active Expired - Lifetime
- 2003-11-14 DE DE60307408T patent/DE60307408T2/de not_active Expired - Lifetime
- 2003-11-14 AT AT03104193T patent/ATE336078T1/de not_active IP Right Cessation
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JPH0883895A (ja) * | 1994-09-14 | 1996-03-26 | Toshiba Corp | 固体撮像素子 |
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JP2004186686A (ja) | 2004-07-02 |
ATE336078T1 (de) | 2006-09-15 |
EP1434270A1 (fr) | 2004-06-30 |
US20040108517A1 (en) | 2004-06-10 |
DE60307408T2 (de) | 2006-12-07 |
US7049673B2 (en) | 2006-05-23 |
DE60307408D1 (de) | 2006-09-21 |
FR2848027B1 (fr) | 2006-02-10 |
FR2848027A1 (fr) | 2004-06-04 |
EP1434270B1 (fr) | 2006-08-09 |
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